JP6922276B2 - Support crystallized glass substrate and laminate using this - Google Patents

Description

The present invention relates to a support crystallized glass substrate and a laminate using the same, and more specifically, to a support crystallized glass substrate used to support a processed substrate in a semiconductor package manufacturing process and a laminate using the same.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been achieved by laminating semiconductor chips and connecting each semiconductor chip with wiring.

Further, a conventional wafer level package (WLP) is manufactured by forming bumps in a wafer state and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP includes a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 ° C., the sealing material may be deformed and the size of the processed substrate may change. When the dimensions of the processed substrate change, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

Under these circumstances, it has been studied to support a processed substrate by using a glass substrate in order to suppress a dimensional change of the processed substrate (see Patent Document 1).

The glass substrate has a surface that is easy to smooth and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be firmly and accurately supported. Further, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the glass substrate can be easily fixed when the adhesive layer or the like is provided by an ultraviolet curable adhesive or the like. Further, the processed substrate and the glass substrate can be easily separated when the release layer or the like that absorbs infrared rays is provided. As another method, the processed substrate and the glass substrate can be easily fixed and separated even when the adhesive layer or the like is provided by the ultraviolet curable tape or the like.

JP-A-2015-78113

By the way, if the coefficients of thermal expansion of the processed substrate and the glass substrate are inconsistent, dimensional changes (particularly, warpage) of the processed substrate are likely to occur during the processing. As a result, it becomes difficult to wire at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

When the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, the coefficient of thermal expansion of the processed substrate is high. In this case, about 25% by mass of alkali metal oxide is added to the glass composition of the glass substrate. It is necessary to introduce it to increase the coefficient of thermal expansion of the glass substrate.

However, if an alkali metal oxide is excessively introduced into the glass composition of the glass substrate, the amount of alkali eluted from the glass substrate increases. As a result, in the manufacturing process of the semiconductor package, it becomes difficult to pass the step of using the chemical solution (for example, the step of removing the chemical solution such as the resin adhering to the surface of the support glass substrate when recycling the support glass substrate).

Further, when the processed substrate is supported by the supporting glass substrate to form a laminated body, if the rigidity of the entire laminated body is low, the processed substrate is likely to be deformed, warped, or damaged during the processing. As a result, it becomes difficult to wire at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

The present invention has been made in view of the above circumstances, and a technical problem thereof is that when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, the dimensional change of the processed substrate during processing ( In particular, it contributes to high-density mounting of semiconductor packages by creating a support substrate that is less likely to cause warpage and has a small amount of alkali elution and a laminate using the same.

As a result of repeating various experiments, the present inventors have found that the above technical problems can be solved by using a crystallized glass substrate in which specific highly expanded crystals are precipitated in a glass matrix as a support substrate. , The present invention is proposed. That is, the supported crystallized glass substrate of the present invention is a supported crystallized glass substrate for supporting a processed substrate, and one or more of lithium disilicate, α-cristobalite, and α-quartz are precipitated. The young rate is 80 GPa or more. Here, "Young's modulus" refers to a value measured by the bending resonance method. In addition, 1 GPa corresponds to ^{about 101.9 Kgf / mm 2.}

In the present invention, a highly expanded crystal, that is, a crystallized glass substrate in which one or more of lithium disilicate, α-cristobalite, and α-quartz are precipitated is used as the support substrate. When these crystals are precipitated in the glass matrix, Young's modulus is improved as compared with the case of crystalline glass before crystallization. Further, when these crystals are precipitated, it is not necessary to excessively introduce an alkali metal oxide into the composition in order to increase the coefficient of thermal expansion. As a result, it becomes possible to reduce the amount of alkali elution of the supported crystallized glass substrate. As with the glass substrate, the crystallized glass substrate can easily smooth the surface and impart light transparency.

Further, the supported crystallized glass substrate of the present invention has a Young's modulus of 80 GPa or more. In this way, the rigidity of the entire laminated body is increased, so that the processed substrate is less likely to be deformed, warped, or damaged during the processing.

Further, the supported crystallized glass substrate of the present invention preferably has an alkali elution amount of less than 1.5 mg. Here, the "alkali elution amount" refers to a value measured based on JIS R3502.

Further, the supported crystallized glass substrate of the present invention has an average transmittance of X (%) in the plate thickness direction in a wavelength range of 250 to 1500 nm before a weather resistance test (HAST: Highly Accelerated Temperature and Humidity Pressure test), and weather resistance. When the average transmittance in the plate thickness direction in the wavelength range of 250 to 1500 nm after the test (HAST) is Y (%), it is preferable to satisfy the relationship of XY <10%. Here, the "average transmittance" can be measured with a commercially available spectrophotometer.

Further, the supported crystallized glass substrate of the present invention has an average coefficient of linear thermal expansion of ^{more than 60 × 10-7} / ° C. and 195 × ^10-7 / ° C. or less in the temperature range of 30 to 380 ° C. preferable. By doing so, when the proportion of the semiconductor chip in the processed substrate is small and the proportion of the encapsulant is large, the coefficient of thermal expansion of the processed substrate and the support crystallized glass substrate can be easily matched. When the thermal expansion coefficients of both are matched, it becomes easy to suppress the dimensional change (particularly, warpage) of the processed substrate during the processing. As a result, wiring can be performed at a high density on one surface of the processed substrate, and solder bumps can be accurately formed. Here, the "average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C." can be measured with a dilatometer.

Further, the supported crystallized glass substrate of the present invention preferably has an overall plate thickness deviation (TTV) of 5 μm or less. Here, the "overall plate thickness deviation (TTV)" is the difference between the maximum plate thickness and the minimum plate thickness of the entire supported crystallized glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd.

Further, the supported crystallized glass substrate of the present invention has a composition of SiO ₂ 50 to 85%, Al ₂ O ₃ 0.1 to 15%, B ₂ O _{30 to} 10%, P ₂ O _{5 in mass%.} 0 to 15%, Li ₂ O 2 to 20%, Na ₂ O 0 to 10%, K ₂ O 0 to 7%, MgO 0 to 10%, CaO 0 to 5%, SrO 0 to 5%, BaO 0 to It preferably contains 5%, ZnO 0 to 5%, and ZrO _{20 to 10%.}

Further, the supported crystallized glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm and a warp amount of 60 μm or less. Here, the "warp amount" is the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supported crystallized glass substrate and the absolute value of the lowest point and the least squares focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Research Institute.

The laminate of the present invention is a laminate including at least a processed substrate and a supported crystallized glass substrate for supporting the processed substrate, and the supported crystallized glass substrate is the above-mentioned supported crystallized glass substrate. And.

Further, the laminate of the present invention preferably includes a semiconductor chip in which the processed substrate is molded with at least a sealing material.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, and a step of processing the processed substrate. The above-mentioned supported crystallized glass substrate is used as the supported crystallized glass substrate.

Further, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processed substrate includes at least a semiconductor chip molded with a sealing material.

It is a conceptual perspective view which shows an example of the laminated body of this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan out type WLP.

The supported crystallized glass substrate of the present invention preferably has one or more of lithium disilicate, α-cristobalite, and α-quartz precipitated, and more preferably lithium disilicate. .. When these crystals are precipitated, the Young's modulus and the coefficient of thermal expansion of the supported crystallized glass substrate can be increased while reducing the amount of alkali elution. In particular, lithium disilicate is advantageous in reducing the overall plate thickness deviation (TTV) by polishing treatment because the size of crystal particles is easily refined, and is also advantageous in ensuring transparency. On the other hand, in the supported crystallized glass substrate of the present invention, it is preferable that β-eucryptite, β-spojumen, β-Christovalite, β-quarts and their solid solutions are not precipitated. By doing so, it is possible to avoid a situation in which the coefficient of thermal expansion of the supported crystallized glass substrate is unreasonably lowered.

In the supported crystallized glass substrate of the present invention, Young's modulus is preferably 80 GPa or more, 85 GPa or more, 90 GPa or more, 95 GPa or more, 98 GPa or more, and particularly 100 to 150 GPa. If the Young's modulus is too low, the rigidity of the entire laminated body is lowered, and the processed substrate is likely to be deformed, warped, or damaged.

In the supported crystallized glass substrate of the present invention, the amount of alkali elution is preferably less than 1.5 mg, 1.0 mg or less, and particularly less than 0.5 mg. If the amount of alkali eluted is too large, the recyclability of the supported crystallized glass substrate tends to decrease.

In the supported crystallized glass substrate of the present invention, the average transmittance in the plate thickness direction in the wavelength range of 250 to 1500 nm before the weather resistance test (HAST) is X (%), and the wavelength range of 250 to 250 to after the weather resistance test (HAST). When the average transmittance in the plate thickness direction at 1500 nm is Y (%), it is preferable to satisfy the relationship of XY <10%, more preferably the relationship of XY <5%, and X- It is particularly preferable to satisfy the relationship of Y <3%. As the value of XY increases, the recyclability of the supported crystallized glass substrate tends to decrease.

In the supported crystallized glass substrate of the present invention, the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° ^{C. is more than 60 × 10-7} / ° C. and 195 × ^10-7 / ° C. or less, preferably 80 × 10 ^-7 / ° C. greater, and 195 × ^{10 -7} / ℃ less, more preferably 100 × ^{10 -7} / ℃ or higher, and 160 × ^{10 -7} / ℃ less, particularly preferably 100 × ^{10 -7} / ℃ or higher And it is 150 × 10 ^-7 / ° C or less. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C. is out of the above range, it becomes difficult for the coefficient of thermal expansion of the processed substrate and the support crystallized glass substrate to match. If the coefficients of thermal expansion of both are inconsistent, dimensional changes (particularly, warpage) of the processed substrate are likely to occur during the processing.

Supporting crystallized glass substrate of the present invention, a composition, in _{mass%, SiO 2 50~85%, Al} 2 O 3 0.1~15%, B 2 O 3 0~10%, P 2 O 5 0~ _{15%, Li 2 O 2~20%} , Na 2 O 0~10%, K 2 O 0~7%, 0~10% MgO, CaO 0~5%, SrO 0~5%, BaO 0~5% , ZnO 0 to 5% and ZrO _{20 to} 10% are preferably contained. The reasons for limiting the content of each component as described above are shown below. In the description of the content of each component, the% indication indicates mass% unless otherwise specified.

SiO ₂ is a component that enhances Young's modulus and weather resistance, and is also a component for precipitating lithium disilicate, α-cristobalite, α-quartz, and the like. However, if _{the content of SiO 2} is too large, the high-temperature viscosity becomes high, and the meltability and moldability tend to decrease. Therefore, _{the content of SiO 2} is preferably 50 to 85%, 60 to 82%, 65 to 80%, 68 to 79%, and particularly 70 to 78%.

Al ₂ O ₃ is a component that enhances Young's modulus and suppresses phase separation and devitrification. However, if _{the content of Al 2} O ₃ is too large, low-expansion crystals such as β-spodium are likely to precipitate due to the phase transition, the high-temperature viscosity is high, and the meltability and moldability are likely to be lowered. Therefore, _{the content of Al 2} O ₃ is preferably 0.1 to 15%, 0.5 to 10%, 1 to 9%, 2 to 8%, and particularly 4 to 7%.

B ₂ O ₃ is a component that enhances meltability and devitrification resistance. However, if _{the content of B 2} O ₃ is too large, Young's modulus and weather resistance tend to decrease. Therefore, _{the content of B 2} O ₃ is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0 to 3%, and particularly less than 0 to 1%.

P ₂ O ₅ is a component for forming crystal nuclei. However, when a _{large amount of P 2} O ₅ is introduced, the glass becomes easy to separate. Therefore, _{the content of P 2} O ₅ is preferably 0 to 15%, 0.1 to 12%, 1 to 8%, and particularly 1.5 to 4%.

Li ₂ O is a component that increases Young's modulus and a coefficient of thermal expansion, a component that lowers high-temperature viscosity and significantly enhances meltability, and a component for precipitating lithium disilicate or the like. However, if _{the content of Li 2} O is too large, the amount of alkali elution tends to increase. Therefore, _{the content of Li 2} O is preferably 2 to 20%, 4 to 17%, 5 to 15%, and particularly 6 to 12%.

Na ₂ O is a component that increases the coefficient of thermal expansion, and is a component that lowers the high-temperature viscosity and remarkably enhances the meltability. It is also a component that contributes to the initial melting of the glass raw material. However, if _{the content of Na 2} O is too large, the amount of alkali elution tends to increase. Therefore, _{the content of Na 2} O is preferably 0 to 10%, 0 to 5%, 0 to 3%, particularly less than 0 to 1%.

K ₂ O is a component that increases the coefficient of thermal expansion, lowers the high-temperature viscosity, remarkably enhances the meltability, and suppresses the coarsening of precipitated crystals. However, if _{the content of K 2} O is too large, the amount of alkali elution tends to increase. Therefore, the _{K 2} O content is preferably 0-7%, the 6%, 0.1% to 5%, 0.5% to 3%, especially 1-2%. If the precipitated crystals become coarse, it becomes difficult to reduce the overall plate thickness deviation (TTV) by the polishing treatment.

MgO is a component that increases Young's modulus, lowers high-temperature viscosity, and enhances meltability. However, if the MgO content is too high, the glass tends to be devitrified during molding. Therefore, the content of MgO is preferably 0 to 10%, 0 to 7%, 0.1 to 4%, and particularly 0.3 to 2%.

CaO is a component that lowers high-temperature viscosity and significantly increases meltability. Further, among alkaline earth metal oxides, since the raw material to be introduced is relatively inexpensive, it is a component that reduces the batch cost, but if the content is too large, the glass tends to be devitrified during molding. Therefore, the CaO content is preferably 0 to 5%, 0 to 3%, 0 to 1%, and particularly 0 to 0.5%.

SrO is a component that suppresses phase separation and a component that suppresses the coarsening of precipitated crystals, but if the content is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the content of SrO is preferably 0 to 5%, 0.1 to 4%, 0.5 to 3%, and particularly 1 to 2%.

BaO is a component that suppresses the coarsening of precipitated crystals, but if the content is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the content of BaO is preferably 0 to 5%, 0 to 4%, 0.1 to 3%, and particularly 0.5 to 2%.

ZnO is a component that lowers the high-temperature viscosity and remarkably enhances the meltability, and is a component that suppresses the coarsening of precipitated crystals. However, if the ZnO content is too high, the glass tends to be devitrified during molding. Therefore, the ZnO content is preferably 0 to 5%, 0 to 3%, 0.1 to 2%, and particularly 0.2 to 1%.

ZrO ₂ is a component that enhances Young's modulus and weather resistance, and is also a component for forming crystal nuclei. However, _{when a large amount of ZrO 2} is introduced, the glass is easily devitrified, and since the introduced raw material is poorly soluble, unmelted foreign matter may be mixed into the crystallized glass substrate. Therefore, _{the content of ZrO 2} is preferably 0 to 10%, 0.1 to 9%, 1 to 8%, 2 to 7%, and particularly 3 to 6%.

In addition to the above components, other components may be introduced as optional components. The content of the components other than the above components is preferably 10% or less, particularly 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.

TiO ₂ is a component for forming crystal nuclei, and is also a component for improving weather resistance and Young's modulus. However, _{when a large amount of TiO 2} is introduced, the glass is colored and the transmittance tends to decrease. Therefore, _{the content of TiO 2} is preferably 0 to 5%, 0 to 3%, and particularly less than 0 to 1%.

Y ₂ O ₃ is a component that increases the Young's modulus of glass. However, Y ₂ O ₃ also has an effect of suppressing crystal growth. Therefore, _{the content of Y 2} O ₃ is preferably 0 to 5%, 0 to 3%, particularly less than 0 to 1%.

Fe ₂ O ₃ is a component mixed as an impurity or a component that can be introduced as a clarifying agent component. However, if _{the content of Fe 2} O ₃ is too large, the ultraviolet transmittance may decrease. That is, if _{the content of Fe 2} O ₃ is too large, it becomes difficult to properly bond and detach the processed substrate and the support crystallized glass substrate via the adhesive layer and the release layer. Therefore, _{the content of Fe 2} O ₃ is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less. _{The "Fe 2} O ₃ " referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is treated in terms of _{Fe 2} O _3. Other polyvalent oxides shall be handled in the same manner based on the indicated oxides.

Nb ₂ O ₅ and La ₂ O ₃ have a function of increasing the strain point, Young's modulus, and the like. However, if the content of each of these components is more than 5%, particularly 1%, the batch cost may increase.

As a clarifying agent, As ₂ O ₃ and Sb ₂ O ₃ act effectively, but from an environmental point of view, it is preferable to reduce this component as much as possible. The contents of As ₂ O ₃ and Sb ₂ O ₃ are preferably 1% or less, 0.5% or less, particularly 0.1% or less, respectively, and it is desirable that they are not substantially contained. Here, "substantially free of" refers to the case where the content of the explicit component in the composition is less than 0.05%.

SnO ₂ is a component having a good clarification effect in a high temperature range and a component that lowers high temperature viscosity. The SnO ₂ content is preferably 0 to 1%, 0.01 to 1%, and particularly 0.05 to 0.5%. If the SnO ₂ content is too high, Sn-based heterogeneous crystals are likely to precipitate. If _{the content of SnO 2} is too small, it becomes difficult to enjoy the above effect.

_{As a clarifying agent, metal powders such as F, Cl, SO 3} , C, Al, and Si may be introduced up to about 3% each as long as the glass properties are not impaired. Further, CeO _{2 and the} like can be introduced up to about 2%, but it is necessary to pay attention to the decrease in the ultraviolet transmittance.

In the supported crystallized glass substrate of the present invention, the overall plate thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly 0.1 to less than 1 μm. The smaller the overall plate thickness deviation (TTV), the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible.

In the supported crystallized glass substrate of the present invention, the amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and particularly 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible.

The supported crystallized glass substrate of the present invention preferably has a substantially disk shape or a wafer shape, and its diameter is preferably 100 mm or more and 500 mm or less, and particularly preferably 150 mm or more and 450 mm or less. In this way, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle.

In the supported crystallized glass substrate of the present invention, the roundness (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of semiconductor packages. Here, the "roundness" is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the supported crystallized glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. As the plate thickness becomes thinner, the mass of the laminated body becomes lighter, so that the handleability is improved. On the other hand, if the plate thickness is too thin, the strength of the support crystallized glass substrate itself decreases, and it becomes difficult to fulfill the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and particularly 0.7 mm or more.

The supported crystallized glass substrate of the present invention preferably has a notch portion (notch-shaped alignment portion), and the deep portion of the notch portion is more preferably a substantially circular shape or a substantially V-groove shape in a plan view. As a result, a positioning member such as a positioning pin is brought into contact with the notch portion of the support crystallized glass substrate, and the position of the support crystallized glass substrate can be easily fixed. As a result, the alignment between the support crystallized glass substrate and the processed substrate becomes easy. In particular, if a notch portion is formed on the processed substrate and the positioning member is brought into contact with the processed substrate, the alignment of the entire laminated body becomes easy.

When the positioning member is brought into contact with the notch portion of the support crystallized glass substrate, stress tends to be concentrated on the notch portion, and the support crystallized glass substrate is easily damaged starting from the notch portion. In particular, this tendency becomes remarkable when the support crystallized glass substrate is curved by an external force. Therefore, in the supported crystallized glass substrate of the present invention, it is preferable that all or a part of the edge region where the surface of the notch portion and the end face intersect is chamfered. As a result, damage originating from the notch portion can be effectively avoided.

In the supported crystallized glass substrate of the present invention, all or part of the edge region where the surface and the end face of the notch intersect is chamfered, and 50% of the edge region where the surface and the end face of the notch intersect. It is preferable that the above is chamfered, and it is more preferable that 90% or more of the edge region where the surface and the end face of the notch portion intersect is chamfered, and the edge region where the surface and the end face of the notch portion intersect. It is more preferable that all of them are chamfered. The larger the chamfered area in the notch portion, the smaller the probability of damage starting from the notch portion can be reduced.

The chamfer width of the notch portion in the front surface direction (the same applies to the chamfer width in the back surface direction) is preferably 50 to 900 μm, 200 to 800 μm, 300 to 700 μm, 400 to 650 μm, and particularly 500 to 600 μm. If the chamfer width of the notch portion in the surface direction is too small, the supporting crystallized glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfering width of the notch portion in the surface direction is too large, the chamfering efficiency is lowered, and the manufacturing cost of the support crystallized glass substrate tends to increase.

The chamfer width of the notch portion in the plate thickness direction (the sum of the chamfer widths of the front surface and the back surface) is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65% of the plate thickness, particularly. It is 40 to 60%. If the chamfer width of the notch portion in the plate thickness direction is too small, the supporting crystallized glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfering width of the notch portion in the plate thickness direction is too large, the external force tends to concentrate on the end face of the notch portion, and the support crystallized glass substrate is easily damaged starting from the end face of the notch portion.

The supported crystallized glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on its surface. When the ion exchange treatment is performed, the manufacturing cost of the supported crystallized glass substrate rises, but when the ion exchange treatment is not performed, the manufacturing cost of the supported crystallized glass substrate can be reduced. Further, if the ion exchange treatment is performed, it becomes difficult to reduce the overall plate thickness deviation (TTV) of the supported crystallized glass substrate, but if the ion exchange treatment is not performed, such a problem can be easily solved.

The method for manufacturing the supported crystallized glass substrate of the present invention will be described. First, a glass raw material is prepared so as to have a predetermined composition, and the obtained glass batch is melted at a temperature of 1550 to 1750 ° C. and then molded into a plate shape to obtain a crystalline glass substrate. As the molding method, various methods can be adopted. For example, a slot-down method, a roll-out method, a redraw method, a float method, an ingot molding method, or the like can be adopted.

Subsequently, a crystallized glass substrate can be produced by heat-treating at 700 to 1000 ° C. for 0.5 to 3 hours to generate crystal nuclei in the crystalline glass substrate and growing the crystals. If necessary, a crystal nucleation step of forming crystal nuclei on a crystalline glass substrate may be provided before the step of growing crystals.

The laminate of the present invention is a laminate including at least a processed substrate and a supported crystallized glass substrate for supporting the processed substrate, and the supported crystallized glass substrate is the above-mentioned supported crystallized glass substrate. And. Here, the technical features (preferable configuration, effect) of the laminate of the present invention overlap with the technical features of the supported crystallized glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The laminate of the present invention preferably has an adhesive layer between the processed substrate and the support crystallized glass substrate. The adhesive layer is preferably a resin, and for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like is preferable. Further, those having heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package are preferable. As a result, the adhesive layer is less likely to melt in the manufacturing process of the semiconductor package, and the accuracy of the processing process can be improved. Since the processed substrate and the support crystallized glass substrate are easily fixed, an ultraviolet curable tape can also be used as an adhesive layer.

The laminate of the present invention further has a release layer between the processed substrate and the support crystallized glass substrate, more specifically, between the processed substrate and the adhesive layer, or a support crystallized glass substrate and the adhesive layer. It is preferable to have a release layer in between. By doing so, it becomes easy to peel off the processed substrate from the support crystallized glass substrate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, the processed substrate is preferably peeled off by irradiation light such as laser light. As the laser light source, an infrared light laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Further, as the release layer, a resin that decomposes by irradiating an infrared laser can be used. In addition, a substance that efficiently absorbs infrared rays and converts them into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin.

The peeling layer is composed of a material in which "intra-layer peeling" or "interfacial peeling" occurs due to irradiation light such as laser light. That is, when irradiated with light of a certain intensity, the intermolecular or intermolecular bonding force between atoms or molecules disappears or decreases to cause ablation or the like, and the material is composed of a material that causes peeling. In addition, there are cases where the components contained in the peeling layer are released as a gas and lead to separation by irradiation with irradiation light, and cases where the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the laminate of the present invention, the supported crystallized glass substrate is preferably larger than the processed substrate. As a result, when the processed substrate and the supported crystallized glass substrate are supported, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the supported crystallized glass substrate.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate, and a step of processing the processed substrate. The above-mentioned supported crystallized glass substrate is used as the supported crystallized glass substrate. Here, the technical features (suitable configuration, effect) of the method for manufacturing a semiconductor package of the present invention overlap with the technical features of the supported crystallized glass substrate and the laminate of the present invention. Therefore, in the present specification, detailed description of the overlapping portion will be omitted.

The method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supported crystallized glass substrate for supporting the processed substrate. The laminate including the processed substrate and the supporting crystallized glass substrate for supporting the processed substrate has the above-mentioned material composition.

The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transporting the laminate. Thereby, the processing efficiency of the processing process can be improved. It should be noted that the "step of transporting the laminated body" and the "step of performing the processing process on the processed substrate" do not have to be performed separately and may be performed at the same time.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, the dimensions of the processed substrate are unlikely to change during these processes, so that these steps can be performed appropriately.

In addition to the above, as the processing, one surface of the processed substrate (usually the surface opposite to the supported crystallized glass substrate) is mechanically polished, and one surface of the processed substrate (usually supported crystallized). Either a process of dry etching the surface opposite to the glass substrate) or a process of wet etching one surface of the processed substrate (usually the surface opposite to the supported crystallized glass substrate) may be performed. In the method for manufacturing a semiconductor package of the present invention, dimensional changes (particularly, warpage) are unlikely to occur in the processed substrate, and the rigidity of the entire laminate can be maintained. As a result, the above processing can be performed properly.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the laminated body 1 of the present invention. In FIG. 1, the laminate 1 includes a support crystallized glass substrate 10 and a processed substrate 11. The support crystallized glass substrate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the support crystallized glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support crystallized glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminated body 1 is laminated in the order of the support crystallized glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the support crystallized glass substrate 10 is determined according to the processed substrate 11, but in FIG. 1, the shapes of the support crystallized glass substrate 10 and the processed substrate 11 are both substantially disk shapes. For the release layer 12, for example, a resin that decomposes by irradiating a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. UV curable tape can also be used. The adhesive layer 13 is dissolved and removed by a solvent or the like after the support crystallized glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed by a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are attached onto the adhesive layer 21. At that time, the active side surface of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 2 (d) and 2 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then the support crystallized glass substrate 26 is separated from the support member 20 via the adhesive layer 25. Adhesively fix. At that time, of the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the support crystallized glass substrate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support crystallized glass substrate 26. Further, after transporting the obtained laminate 27, as shown in FIG. 2 (f), after forming a wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 To form. Finally, after separating the processed substrate 24 from the support crystallized glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and subjected to a subsequent packaging step (FIG. 2 (g)).

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

Table 1 shows Examples (Samples Nos. 1 to 12) and Comparative Examples (Samples Nos. 13 and 14) of the present invention.

First, a glass batch prepared with a glass raw material was placed in a platinum crucible so as to have the composition shown in the table, and melted at 1600 ° C. for 4 hours. When melting the glass batch, stirring was performed using a platinum stirrer to homogenize the glass batch. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled from a temperature about 20 ° C. higher than the slow cooling point to room temperature at 3 ° C./min. Each of the obtained crystalline glass samples (Sample Nos. 1 to 12) was put into an electric furnace and held at 500 to 800 ° C. for 0.5 to 5 hours to generate crystal nuclei, and then 850 to 1000 ° C. Crystals were grown in the glass by holding in 1-5 hours. After the crystals were grown, they were cooled to room temperature at a temperature lowering rate of 1 ° C./min. In addition, sample No. The crystallization treatments for 13 and 14 have not been performed (even if the crystallization treatment is performed, crystals do not precipitate). For each sample obtained, precipitated crystals, the average linear thermal expansion coefficient _{CTE 30-220 ℃} in the temperature range of 30 to 220 ° C., 30 to 260 average linear thermal expansion coefficient _{CTE 30-260 ℃} in the temperature range of ° C.,. 30 to _{Average coefficient of linear thermal expansion CTE 30-300 °} C in the temperature range of 300 ° C, average coefficient of linear thermal expansion CTE _{30-380 ° C in the temperature range of 30-380 ° C} , Young rate, alkali elution, after weather resistance test (HAST) The appearance and change in permeability were evaluated.

The precipitated crystals were evaluated by an X-ray diffractometer (Rigaku RINT-2100). The measurement range was set to 2θ = 10 to 60 °.

Average coefficient of linear thermal expansion in the temperature range of _{30 to 220 ° C} CTE 30-220 ° C, average coefficient of linear thermal expansion in the temperature range of 30 to _{260 ° C CTE 30-260 ° C, average linear thermal expansion in the temperature range of 30 to 300 ° C} The coefficient of _{linear thermal expansion CTE 30-380 °} C. in the temperature range of _{CTE 30-300 ° C.} and 30 to 380 ° C. is a value measured by a dilatometer.

Young's modulus E is a value measured by the resonance method.

The alkali elution was evaluated as "◯" when the amount of alkali elution measured based on JIS R3502 was less than 1.5 mg, and as "x" when it was more than ^{1.5 mg / cm 2.}

The appearance after the weather resistance test (HAST) is as follows. The case where no change was observed was evaluated as "○", and the case where no change was observed was evaluated as "x".

The change in transmittance after the weather resistance test (HAST) is determined by first measuring the average transmittance in the plate thickness direction and wavelength range of 250 to 1500 nm using a spectrophotometer (UV-3100 manufactured by Shimadzu Corporation). After holding for 8 hours under the conditions of 135 ° C. and 95% humidity, the average transmittance was measured under the same conditions, and finally the decrease in the average transmittance was calculated, and the value was less than 10%. The case was evaluated as "○", and the case of 10% or more was evaluated as "x".

As is clear from Table 1, the sample No. 1 to 12 had a high Young's modulus, a small amount of alkali elution, and good weather resistance. Therefore, the sample No. 1 to 12 are considered to be suitable as a support substrate used for supporting a processed substrate in the manufacturing process of a semiconductor package. On the other hand, sample No. Nos. 13 and 14 had a low Young's modulus, a large amount of alkali elution, and poor weather resistance.

Each sample of [Example 2] was prepared as follows. First, the sample Nos. After the glass raw materials are mixed so as to have a composition of 1 to 12, they are supplied to a glass melting furnace and melted at 1550 to 1650 ° C., and then the molten glass is poured into a ceramic mold and molded into a plate shape. bottom. Each of the obtained samples was placed in an electric furnace and held at 500 ° C. for 30 minutes to generate crystal nuclei, and then held at 850 ° C. for 60 minutes to grow crystals in a glass matrix. After the crystals were grown, they were cooled to room temperature at a temperature lowering rate of 1 ° C./min. The obtained crystallized glass substrate (overall plate thickness deviation TTV of about 5.5 μm) was processed to a thickness of φ300 mm × 0.7 mm, and then both surfaces thereof were polished by a polishing device. Specifically, both surfaces of the crystallized glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the crystallized glass substrate are polished while rotating the crystallized glass substrate and the pair of polishing pads together. bottom. During the polishing process, it was occasionally controlled so that a part of the crystallized glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained crystallized glass substrates that had been polished, the total plate thickness deviation (TTV) and the amount of warpage were measured by SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation (TTV) was less than 1.0 μm, and the amount of warpage was 35 μm or less, respectively.

The supported crystallized glass substrate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package, but it can be applied to other uses. For example, by taking advantage of high expansion, it can be applied as a substitute substrate for a highly expanding metal substrate such as an aluminum alloy substrate, and can also be applied as a substitute substrate for a highly expanding ceramic substrate such as a zirconia substrate or a ferrite substrate.

1, 27 Laminates 10, 26 Support crystallized glass substrate 11, 24 Processed substrate 12 Release layer 13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Encapsulant 28 Wiring 29 Solder bump

Claims (11)

A support crystallized glass substrate for supporting a processed substrate.
The average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C. is 87.1 × ^10-7 / ° C. or higher and 195 × ^10-7 / ° C. or lower.
One or more of lithium disilicate, α-cristobalite, and α-quartz are precipitated.
A supported crystallized glass substrate having a Young's modulus of 80 GPa or more. The supported crystallized glass substrate according to claim 1, wherein the amount of alkali elution is less than 1.5 mg. The average transmittance in the plate thickness direction in the wavelength range of 250 to 1500 nm before the weather resistance test (HAST) is X (%), and the average transmittance in the plate thickness direction in the wavelength range of 250 to 1500 nm after the weather resistance test (HAST). The supported crystallized glass substrate according to claim 1 or 2, wherein when Y (%) is satisfied, the relationship of XY <10% is satisfied. Any of claims 1 to 3, wherein the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C. is 100 × ^10-7 / ° C. or higher and 195 × ^{10-7 / ° C. or lower.} The supported crystallized glass substrate according to the description. The support crystallized glass substrate according to any one of claims 1 to 4, wherein the total plate thickness deviation (TTV) is 5 μm or less. A composition, in _{mass%, SiO 2 50~85%, Al} 2 O 3 0.1~15%, B 2 O 3 0~10%, P 2 O 5 0~15%, Li 2 O 2~20% , Na ₂ O 0-10%, K ₂ O 0-7%, MgO 0-10%, CaO 0-5%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, ZrO ₂₀ The supported crystallized glass substrate according to any one of claims 1 to 5, which contains 10% to 10%. The supported crystallized glass substrate according to any one of claims 1 to 6, wherein the plate thickness is less than 2.0 mm and the amount of warpage is 60 μm or less. A laminate including at least a processed substrate and a support crystallized glass substrate for supporting the processed substrate.
A laminate characterized in that the supported crystallized glass substrate is the supported crystallized glass substrate according to any one of claims 1 to 7. The laminate according to claim 8, wherein the processed substrate includes at least a semiconductor chip molded with a sealing material. A process of preparing a laminate including at least a processed substrate and a supporting crystallized glass substrate for supporting the processed substrate, and
It has a process of performing processing on a processed substrate, and also has a process.
A method for manufacturing a semiconductor package, which comprises using the supported crystallized glass substrate according to any one of claims 1 to 7 as the supported crystallized glass substrate. The method for manufacturing a semiconductor package according to claim 10, wherein the processed substrate includes at least a semiconductor chip molded with a sealing material.

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