TWI671271B - Laminated body, semiconductor package and its manufacturing method, electronic machine - Google Patents

Abstract

The technical problem of the present invention is to create a supporting substrate and a laminated body using the supporting substrate that are less likely to cause dimensional changes in a processed substrate, thereby contributing to high-density mounting of a semiconductor package. The support glass substrate of the present invention is characterized in that an average linear thermal expansion coefficient in a temperature range of 20 ° C. to 200 ° C. exceeds 81 × 10 ^-7 / ° C. and is 110 × 10 ^-7 / ° C. or less.

Description

Laminated body, semiconductor package, manufacturing method thereof, and electronic device

The present invention relates to a supporting glass substrate and a laminated body using the same, and more particularly, to a supporting glass substrate and a laminated body using the same in a manufacturing process of a semiconductor package for supporting the substrate. .

Portable electronic devices such as mobile phones, notebook personal computers, and personal data assistants (PDAs) are required to be miniaturized and lightened. Along with this, the mounting space of semiconductor chips used in these electronic devices is also severely restricted, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor wafers on each other and wiring connections between the semiconductor wafers.

In addition, in a conventional wafer-level packaging (WLP), bumps are formed in a wafer state and then singulated to form wafers. However, conventional WLPs are difficult to increase the number of pins, and are mounted in a state where the back surface of the semiconductor wafer is exposed. Therefore, there is a problem that semiconductor wafers are prone to defects.

Therefore, as a new WLP, a fan-out type WLP is proposed. In a fan-out type WLP, the number of pins can be increased, and by protecting the ends of the semiconductor wafer, defects such as the semiconductor wafer can be prevented.

The fan-out type WLP includes a step of molding a plurality of semiconductor wafers with a resin sealing material to form a processed substrate, a step of wiring on one surface of the processed substrate, and a step of forming a solder bump.

These steps are accompanied by a heat treatment at about 200 ° C, so that the sealing material may be deformed and the size of the processed substrate may change. If the size of the processing substrate changes, it is difficult to perform high-density wiring on one surface of the processing substrate, and it is also difficult to accurately form solder bumps.

In order to suppress the dimensional change of the processing substrate, it is effective to use a support substrate for supporting the processing substrate. However, even when a support substrate is used, the size of a processing substrate may change.

The present invention has been made in view of the above circumstances, and a technical problem of the present invention is to create a support substrate and a laminated body using the support substrate that are unlikely to cause dimensional changes in a processed substrate, thereby contributing to high-density mounting of a semiconductor package.

The present inventors conducted various experiments repeatedly, and as a result, found that a glass substrate is used as a support substrate, and the thermal expansion coefficient of the glass substrate is strictly specified, so that the technical problem can be solved, and the present invention is proposed. That is, the support glass substrate of the present invention is characterized in that an average linear thermal expansion coefficient in a temperature range of 20 ° C. to 200 ° C. exceeds 81 × 10 ^-7 / ° C and is 110 × 10 ^-7 / ° C or less. Here, the "average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C" can be measured using a dilatometer.

The glass substrate is easy to smooth and rigid. Accordingly, if a glass substrate is used as the support substrate, the processing substrate can be firmly and accurately supported. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, if a glass substrate is used as the support substrate, the processing substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like using an ultraviolet curing adhesive or the like. Furthermore, the processing substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. As another method, the processing substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.

In the support glass substrate of the present invention, an average linear thermal expansion coefficient in a temperature range of 20 ° C. to 200 ° C. is specified to be more than 81 × 10 ^-7 / ° C. and 110 × 10 ^-7 / ° C. or less. Accordingly, when the proportion of the semiconductor wafer in the processed substrate is small and the proportion of the sealing material is large, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are easily matched. In addition, if the thermal expansion coefficients of the two are matched, it is easy to suppress dimensional changes (especially warpage deformation) of the processed substrate during processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can be accurately formed.

Second, the support glass substrate of the present invention is characterized in that an average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C exceeds 85 × 10 ^-7 / ° C and is 115 × 10 ^-7 / ° C or less. Here, the "average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C" can be measured using an expansion meter.

Third, the supporting glass substrate of the present invention is preferably manufactured in a semiconductor package. Support for processing substrates in the manufacturing steps.

Fourth, the supporting glass substrate of the present invention is preferably formed by an overflow down-draw method.

Fifth, the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more. Here, the "Young's modulus" means a value measured by a bending resonance method. In addition, 1 GPa corresponds to about 101.9 Kgf / mm ² .

Sixth, the supporting glass substrate of the present invention is preferably used as a glass composition, and contains 50% to 80% SiO ₂ , 1% to 20% Al ₂ O ₃ , and 0% to 20% B ₂ O in terms of mass%. ₃ , 0% to 10% MgO, 0% to 10% CaO, 0% to 7% SrO, 0% to 7% BaO, 0% to 7% ZnO, 0% to 25% Na ₂ O, and K ₂ O of 0% to 25%.

Seventh, the supporting glass substrate of the present invention is preferably a glass composition, and contains 55% to 70% SiO ₂ , 3% to 18% Al ₂ O ₃ , and 0% to 8% B ₂ O in terms of mass%. ₃ , 0% ~ 5% MgO, 0% ~ 10% CaO, 0% ~ 5% SrO, 0% ~ 5% BaO, 0% ~ 5% ZnO, 2% ~ 23% Na ₂ O, and K ₂ O of 0% to 20%.

Eighth, the supporting glass substrate of the present invention preferably has a plate thickness of less than 2.0 mm, a plate thickness deviation of 30 μm or less, and a warpage amount of 60 μm or less. Here, the "warpage amount" means the absolute value of the maximum distance between the highest position and the least square focal plane in the entire glass substrate, and the absolute value of the maximum distance between the lowest position and the least square focal plane. The total can be measured by, for example, a Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Scientific.

Ninth, the laminated body of the present invention includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, characterized in that the supporting glass substrate is the supporting glass substrate.

Tenth, the laminated body of the present invention is preferably a processing substrate including at least a semiconductor wafer molded with a sealing material.

Eleventh, the method for manufacturing a semiconductor package of the present invention is characterized by comprising the steps of: preparing a laminated body including at least a processed substrate and a glass substrate supporting the processed substrate; transporting the laminated body; and processing the processed substrate The processing and supporting glass substrate is the supporting glass substrate. In addition, "the step of conveying a laminated body" and "the step of processing a processed substrate" need not be performed separately, and may be performed simultaneously.

Twelfth, the method for manufacturing a semiconductor package according to the present invention is preferably a process including a step of wiring on one surface of a processed substrate.

Thirteenth, the method for manufacturing a semiconductor package of the present invention preferably includes a step of forming a solder bump on one surface of the processed substrate.

Fourteenth, the method for manufacturing a semiconductor package according to the present invention is characterized by using the method for manufacturing a semiconductor package.

Fifteenth, the electronic device of the present invention includes a semiconductor package, which is characterized in that the semiconductor package is the semiconductor package.

1.27‧‧‧layer

10, 26‧‧‧ Support glass substrate

11, 24‧‧‧ processing substrate

12‧‧‧ peeling layer

13, 21, 25‧‧‧ Adhesive layer

20‧‧‧ supporting components

22‧‧‧Semiconductor wafer

23‧‧‧sealing material

28‧‧‧ Wiring

29‧‧‧solder bump

FIG. 1 is a conceptual perspective view showing an example of a laminated body of the present invention.

2 (a) to 2 (g) are conceptual cross-sectional views showing manufacturing steps of a fan-out type WLP.

In the support glass substrate of the present invention, the average linear thermal expansion coefficient in a temperature range of 20 ° C to 200 ° C exceeds 81 × 10 ^-7 / ° C and is 110 × 10 ^-7 / ° C or lower, preferably 82 × 10 ^-7 / ° C The above is 95 × 10 ^-7 / ° C or less, and particularly preferably 83 × 10 ^-7 / ° C or more and 91 × 10 ^-7 / ° C or less. If the average linear thermal expansion coefficient in the temperature range of 20 ° C to 200 ° C is outside the range, it is difficult to match the thermal expansion coefficients of the processed substrate and the support glass substrate. Moreover, if the thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are liable to occur during processing.

The average linear thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C exceeds 85 × 10 ^-7 / ° C and is 115 × 10 ^-7 / ° C or lower, preferably 86 × 10 ^-7 / ° C or higher and 100 × 10 ^-7 / The temperature is not more than 87 ° C, more preferably not less than 87 × 10 ^-7 / ° C and not more than 95 × 10 ^-7 / ° C. If the average linear thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is outside the range, it is difficult to match the thermal expansion coefficients of the processed substrate and the support glass substrate. Moreover, if the thermal expansion coefficients of the two do not match, dimensional changes (especially warpage deformation) of the processed substrate are liable to occur during processing.

The supporting glass substrate of the present invention is preferably a glass composition, and contains 50% to 80% SiO ₂ , 1% to 20% Al ₂ O ₃ , 0% to 20% B ₂ O ₃ , and 0% by mass. % ~ 10% MgO, 0% ~ 10% CaO, 0% ~ 7% SrO, 0% ~ 7% BaO, 0% ~ 7% ZnO, 0% ~ 25% Na ₂ O, and 0 % ~ 25% of K ₂ O. The reason for limiting the content of each component as described above is shown below. In addition, in the description of the content of each component,% expression expresses% by mass unless otherwise specified.

SiO ₂ is a main component that forms the skeleton of glass. The content of SiO ₂ is preferably 50% to 80%, 55% to 75%, 58% to 70%, and particularly preferably 60% to 68%. When the content of SiO ₂ is too small, the Young's modulus and acid resistance tend to decrease. On the other hand, if the content of SiO ₂ is too large, the high-temperature viscosity increases and the meltability tends to decrease. In addition, devitrified crystals such as cristobalite tend to precipitate and the liquidus temperature tends to rise.

Al ₂ O ₃ is a component that increases the Young's modulus and is a component that suppresses phase separation and devitrification. The content of Al ₂ O ₃ is preferably 1% to 20%, 3% to 18%, 4% to 16%, 5% to 13%, 6% to 12%, and particularly preferably 7% to 10%. When the content of Al ₂ O ₃ is too small, the Young's modulus is liable to decrease, and the glass is liable to phase separation and devitrification. On the other hand, if the content of Al ₂ O ₃ is too large, the high-temperature viscosity increases, and the meltability and formability tend to decrease.

B ₂ O ₃ is a component that improves the meltability and devitrification resistance, and is a component that improves the scratch resistance and the strength. The content of B ₂ O ₃ is preferably 0% to 20%, 1% to 12%, 2% to 10%, and particularly preferably 3% to 8%. When the content of B ₂ O ₃ is too small, meltability and devitrification resistance tend to decrease, and resistance to a hydrofluoric acid-based chemical solution tends to decrease. On the other hand, when the content of B ₂ O ₃ is too large, the Young's modulus and acid resistance tend to decrease.

From the viewpoint of increasing the Young's modulus, Al ₂ O ₃ -B ₂ O _{3 is} preferably more than 0%, more than 1%, more than 3%, more than 5%, more than 7%, and more preferably more than 9%. In addition, "Al ₂ O ₃ -B ₂ O ₃ " means a value obtained by subtracting the content of B ₂ O ₃ from the content of Al ₂ O ₃ .

MgO is a component that lowers the viscosity at high temperatures and improves the meltability, and is a component that significantly increases the Young's modulus among alkaline earth metal oxides. The content of MgO is preferably 0% to 10%, 0% to 8%, 0% to 5%, 0% to 3%, 0% to 2%, and particularly preferably 0% to 1%. When the content of MgO is too large, devitrification resistance is liable to decrease.

CaO is a component that lowers the viscosity at high temperatures and significantly improves the meltability. In addition, it is a component of the alkaline-earth metal oxides that reduces the cost of raw materials because the raw materials are relatively inexpensive to introduce. The content of CaO is preferably 0% to 10%, 0.5% to 8%, 1% to 6%, and particularly preferably 2% to 5%. When the content of CaO is too large, the glass is liable to be devitrified. When the content of CaO is too small, it is difficult to enjoy the effects.

SrO is a component that suppresses phase separation and is a component that improves devitrification resistance. The content of SrO is preferably 0% to 7%, 0% to 5%, 0% to 3%, and particularly preferably 0% to less than 1%. When the content of SrO is too large, the glass is liable to be devitrified.

BaO is a component which improves devitrification resistance. The content of BaO is preferably 0% to 7%, 0% to 5%, 0 to 3%, and 0% to less than 1%. When the content of BaO is too large, the glass is liable to be devitrified.

The mass ratio CaO / (MgO + CaO + SrO + BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass is too small compared to CaO / (MgO + CaO + SrO + BaO), the cost of raw materials tends to increase. In addition, "CaO / (MgO + CaO + SrO + BaO)" is a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO, and BaO.

ZnO is a component that lowers the viscosity at high temperatures and significantly improves the meltability. The content of ZnO is preferably 0% to 7%, 0.1% to 5%, and particularly preferably 0.5% to 3%. When the content of ZnO is too small, it is difficult to enjoy the effects. When the content of ZnO is too large, the glass is liable to be devitrified.

Na ₂ O is a component that is important for proper thermal expansion coefficient, is a component that lowers the high-temperature viscosity and significantly improves the meltability, and contributes to the initial melting of the glass raw material. The content of Na ₂ O is preferably 0% to 25%, 5% to 25%, 8% to 24%, 11% to 23%, 13% to 21%, particularly preferably more than 15% to 19%. If the content of Na ₂ O is too small, the meltability tends to decrease, and in addition, the thermal expansion coefficient may decrease unreasonably. On the other hand, if the content of Na ₂ O is too large, the thermal expansion coefficient may increase unreasonably.

From the viewpoint of optimizing the thermal expansion coefficient, the mass ratio Al ₂ O ₃ / Na ₂ O is preferably 0.20 to 1.3, 0.25 to 1.0, 0.30 to 0.85, 0.35 to 0.65, and particularly preferably 0.40 to 0.55.

K ₂ O is a component for adjusting the thermal expansion coefficient, a component that lowers the high-temperature viscosity and improves the meltability, and contributes to the initial melting of the glass raw material. The content of K ₂ O is preferably 0% to 25%, 0% to 20%, 0% to 15%, 0% to 10%, 0% to 6%, and particularly preferably 0% to 1%. If the content of K ₂ O is too large, the thermal expansion coefficient may increase unreasonably.

The content of Na ₂ O + K ₂ O is preferably 12% to 35%, 15% to 25%, 16% to 23%, 17% to 22%, and particularly preferably 18% to 21%. Accordingly, it is easy to specify an average linear thermal expansion coefficient in a temperature range of 20 ° C. to 200 ° C. to exceed 81 × 10 ^-7 / ° C to 110 × 10 ^-7 / ° C. In addition, "Na ₂ O + K ₂ O" is the total amount of Na ₂ O and K ₂ O.

In the case of improving the meltability, the mass ratio Na ₂ O / (Na ₂ O + K ₂ O) is preferably more than 0.5, 0.6 or more, 0.7 or more, 0.8 or more, 0.9 or more, particularly preferably 0.95 or more. In the case of chemical durability, it is preferably 0.65 or less, 0.6 or less, 0.55 or less, less than 0.5, 0.45 or less, and particularly preferably 0.4 or less. In addition, _{"Na 2 O / (Na 2 O} + K 2 O) " refers to the content of Na ₂ O Na ₂ O divided by the total value of the resulting amount of K ₂ O of.

In addition to the components described above, other components may be introduced as optional components. In addition, from the standpoint of enjoying the effects of the present invention, the content of the components other than the components is preferably 10% or less in total, and more preferably 5% or less.

Fe ₂ O ₃ is a component that can be introduced as an impurity component or a clarifier component. However, if the content of Fe ₂ O ₃ is too large, the ultraviolet transmittance may be reduced. That is, if the content of Fe ₂ O ₃ is too large, it is difficult to appropriately adhere and peel off the processed substrate and the supporting glass substrate through the adhesive layer and the release layer. Therefore, the content of Fe ₂ O ₃ is preferably 0.05% or less, 0.03% or less, and particularly preferably 0.02% or less. In addition, the "Fe ₂ O ₃ " mentioned in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is converted into Fe ₂ O ₃ and processed. The other oxides are treated similarly based on the expressed oxides.

As fining agents, As ₂ O ₃ and Sb ₂ O ₃ effectively function, and from the viewpoint of the environment, it is preferable to reduce these components as much as possible. The content of As ₂ O ₃ is preferably 1% or less, 0.5% or less, and particularly preferably 0.1% or less. It is desirable that it is substantially not contained. Here, "substantially not containing As ₂ O ₃ " means a case where the content of As ₂ O ₃ in the glass composition is less than 0.05%. In addition, the content of Sb ₂ O ₃ is preferably 1% or less, 0.5% or less, and particularly preferably 0.1% or less. It is desirable that it is substantially not contained. Here, "substantially does not contain Sb ₂ O ₃ " refers to a case where the content of Sb ₂ O ₃ in the glass composition is less than 0.05%.

SnO ₂ is a component having a good clarifying effect in a high-temperature region and a component that lowers the viscosity at high temperatures. The content of SnO ₂ is preferably 0% to 1%, 0.001% to 1%, 0.01% to 0.9%, and particularly preferably 0.05% to 0.7%. When the content of SnO ₂ is too large, devitrified crystals of SnO ₂ are liable to precipitate. If the content of SnO ₂ is too small, it is difficult to enjoy the effects.

Furthermore, as long as the glass characteristics are not impaired, metal powders such as F, Cl, SO ₃ , C, or Al, Si may be introduced to about 3% as a clarifying agent. In addition, CeO ₂ and the like can be introduced at about 3%, but it is necessary to pay attention to the decrease in ultraviolet transmittance.

Cl is a component that promotes melting of glass. When Cl is introduced into the glass composition, the melting temperature can be lowered and clarification can be promoted. As a result, it is easy to reduce the melting cost and prolong the life of the glass manufacturing furnace. However, if the content of Cl is too large, there is a possibility that metal parts around the glass manufacturing furnace may be corroded. Therefore, the content of Cl is preferably 3% or less, 1% or less, 0.5% or less, and particularly preferably 0.1% or less.

P ₂ O ₅ is a component that can suppress the precipitation of devitrified crystals. However, when a large amount of P ₂ O ₅ is introduced, the glass is liable to phase separation. Therefore, the content of P ₂ O ₅ is preferably 0% to 2.5%, 0% to 1.5%, 0% to 0.5%, and particularly preferably 0% to 0.3%.

TiO ₂ is a component that lowers the high-temperature viscosity and improves the meltability, and is a component that suppresses solarization. However, when TiO ₂ is introduced in a large amount, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO ₂ is preferably 0% to 5%, 0% to 3%, 0% to 1%, and particularly preferably 0% to 0.02%.

ZrO ₂ is a component that improves chemical resistance and Young's modulus. However, if ZrO ₂ is introduced in a large amount, the glass is liable to be devitrified, and the introduction raw material is difficult to dissolve. Therefore, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO ₂ is preferably 0% to 5%, 0% to 3%, 0% to 1%, and particularly preferably 0% to 0.5%.

Y ₂ O ₃ , Nb ₂ O ₅ , and La ₂ O ₃ have the effects of increasing the strain point and Young's modulus. However, when the content of these components is 5%, especially more than 1%, there is a risk that the cost of raw materials and products will increase.

The support glass substrate of the present invention preferably has the following characteristics.

In the supporting glass substrate of the present invention, the Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, and particularly preferably 73 GPa or more. When the Young's modulus is too low, it is difficult to maintain the rigidity of the laminated body, and the processed substrate is liable to be deformed, warped, and damaged.

The liquidus temperature is preferably less than 1150 ° C, 1120 ° C or lower, 1100 ° C or lower, 1080 ° C or lower, 1050 ° C or lower, 1010 ° C or lower, 980 ° C or lower, 960 ° C or lower, or 950 ° C or lower, particularly preferably 940 ° C or lower. Accordingly, it is easy to form the glass substrate by the down-draw method, especially the overflow down-draw method, so that it is easy to produce a glass substrate having a small thickness, and the thickness variation can be reduced without polishing the surface. Or, by a small amount of grinding, the overall plate thickness deviation can be reduced to less than 2.0 μm, especially to less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can also be reduced. Furthermore, in the manufacturing process of a glass substrate, it is easy to prevent the situation where devitrification crystal | crystallization arises and productivity of a glass substrate falls. Here, the "liquid phase temperature" can be calculated by putting glass powder that has passed through a standard sieve 30 mesh (500 μm) and remained at 50 mesh (300 μm) into a platinum boat, and then holds it in a temperature gradient furnace. At 24 hours, the temperature at which crystals were precipitated was measured.

The viscosity at the liquidus temperature is preferably 10 ^4.6 dPa. Above s, 10 ^5.0 dPa. s above, 10 ^5.2 dPa. Above s, 10 ^5.4 dPa. above s, 10 ^5.6 dPa. Above s, especially preferred is 10 ^5.8 dPa. s or more. Accordingly, since the glass substrate is easily formed by the down-draw method, particularly the overflow down-draw method, it is easy to produce a glass substrate having a small thickness, and the thickness variation can be increased without polishing the surface. Or, by a small amount of grinding, the overall plate thickness deviation can be reduced to less than 2.0 μm, especially to less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced. Furthermore, in the manufacturing process of a glass substrate, it is easy to prevent a situation where devitrification crystal | crystallization arises and productivity of a glass substrate falls. Here, the "viscosity at the liquidus temperature" can be measured by a platinum ball pulling method. In addition, the viscosity at the liquidus temperature is an index of moldability, and the higher the viscosity at the liquidus temperature, the higher the moldability.

10 ^2.5 dPa. The temperature at s is preferably 1580 ° C or lower, 1500 ° C or lower, 1450 ° C or lower, 1400 ° C or lower, or 1350 ° C or lower, and particularly preferably 1200 ° C to 1300 ° C. If 10 ^2.5 dPa. As the temperature at s increases, the meltability decreases, and the manufacturing cost of the glass substrate increases. Here, the "temperature at 10 ^2.5 dPa · s" can be measured by a platinum ball pulling method. In addition, 10 ^2.5 dPa. The temperature at s corresponds to the melting temperature, and the lower the temperature, the higher the melting property.

The supporting glass substrate of the present invention is preferably formed by using a down-draw method, and particularly preferably by an overflow down-draw method. The overflow down-draw method is a method in which molten glass overflows from both sides of a heat-resistant trough-like structure, and the overflowing molten glass is formed while converging at the lower end of the trough-like structure while extending downward. Manufacture of glass substrate. In the overflow down-draw method, the surface that should be the surface of the glass substrate does not come into contact with the channel-shaped refractory, but is formed in a free surface state. Therefore, it is easy to produce a glass substrate with a small plate thickness, and the plate thickness variation can be reduced without polishing the surface. or, A small amount of grinding can be used to reduce the overall plate thickness deviation to less than 2.0 μm, especially to less than 1.0 μm. As a result, the manufacturing cost of the glass substrate can be reduced.

As a method for forming the glass substrate, in addition to the overflow down-draw method, for example, a down-hole drawing method, a re-draw method, and a float method can be used.

The glass substrate of the present invention is preferably substantially disc-shaped or wafer-shaped, and its diameter is preferably 100 mm or more and 500 mm or less, and particularly preferably 150 mm or more and 450 mm or less. This makes it easy to apply to the manufacturing steps of the semiconductor package. If necessary, it can be processed into other shapes, such as rectangular shapes.

In the glass substrate of the present invention, the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing steps of a semiconductor package. The roundness is defined as a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

In the support glass substrate of the present invention, the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly preferably 0.9 mm or less. The thinner the thickness of the plate, the lighter the weight of the laminated body, and thus the operability is improved. On the other hand, if the plate thickness is too thin, the strength of the supporting glass substrate itself decreases, and it becomes difficult to perform the function as a supporting substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, and 0.6 mm or more, and more preferably 0.7 mm or more.

In the support glass substrate of the present invention, the plate thickness deviation is preferably 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, and 1 μm or less, particularly preferably 0.1 μm to less than 1 μm. And arithmetic flat The average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, and 1 nm or less, and more preferably 0.5 nm or less. The higher the surface accuracy, the easier it is to improve the accuracy of processing. Since wiring accuracy can be improved in particular, high-density wiring can be performed. In addition, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated body are not easily broken. Furthermore, the number of reuses of the supporting glass substrate can be increased. The "arithmetic average roughness Ra" can be measured by a stylus surface roughness meter or an atomic force microscope (AFM).

The support glass substrate of the present invention preferably has a surface polished after being formed by an overflow down-draw method. This makes it easy to specify a plate thickness variation of 2 μm or less, and 1 μm or less, and it is particularly easy to specify a thickness of less than 1 μm.

In the support glass substrate of the present invention, the amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 μm to 45 μm, and particularly preferably 5 μm to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of processing. Since wiring accuracy can be improved in particular, high-density wiring can be performed.

In the supporting glass substrate of the present invention, the ultraviolet transmittance in the thickness direction and at a wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, and particularly preferably 80% or more. If the ultraviolet transmittance is too low, it becomes difficult to adhere the processing substrate and the support substrate by the adhesive layer due to the irradiation of the ultraviolet light. In addition, when an adhesive layer or the like is provided using an ultraviolet curing tape or the like, it is difficult to easily separate the processing substrate from the supporting glass substrate. The "ultraviolet transmittance in the thickness direction and at a wavelength of 300 nm" can be evaluated by using, for example, a two-beam type beam splitting A photometer measures the spectral transmittance at a wavelength of 300 nm.

The support glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface. If an ion exchange process is performed, the manufacturing cost of a support glass substrate will increase. Furthermore, if an ion exchange process is performed, it will become difficult to reduce the variation in the overall thickness of the supporting glass substrate. The support glass substrate of the present invention does not exclude a form in which a compressive stress layer is formed on the surface by performing an ion exchange process. From the viewpoint of improving the mechanical strength, it is preferable to perform an ion exchange treatment and form a compressive stress layer on the surface.

The laminated body of the present invention includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and is characterized in that the supporting glass substrate is the supporting glass substrate. Here, the technical features (preferred structure and effect) of the laminated body of the present invention are the same as those of the glass substrate support of the present invention. Therefore, in this specification, detailed descriptions of the overlapping portions are omitted. In addition, since the processing substrate and the supporting glass substrate can be easily fixed, an ultraviolet curing tape can also be used as an adhesive layer.

The laminated body of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, and for example, a thermosetting resin, a photocurable resin (particularly, an ultraviolet curable resin), and the like are preferable. Moreover, it is preferable that it has heat resistance which can endure the heat processing of the manufacturing process of a semiconductor package. Therefore, the adhesive layer is not easily melted in the manufacturing steps of the semiconductor package, and the accuracy of processing can be improved.

The laminated body of the present invention preferably further has a release layer between the processing substrate and the supporting glass substrate, and more specifically, between the processing substrate and the adhesive layer. According to this, after a specific processing process is performed on the processing substrate, the processing substrate is easily self-supported. The glass substrate was peeled. From the viewpoint of productivity, peeling of the processed substrate is preferably performed by irradiation with light such as laser light. As the laser light source, an infrared light laser source such as a Yttrium Aluminium Garnet (YAG) laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 nm to 1300 nm) can be used. Further, a resin that is decomposed by irradiating infrared laser can be used for the release layer. Furthermore, a substance that absorbs infrared rays with high efficiency and converts them into heat may be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. may be added to the resin.

The release layer includes materials that cause "in-layer peeling" or "interface peeling" due to irradiation light such as laser light. That is, it includes a material that, when light of a fixed intensity is irradiated, the bonding force between atoms or molecules of atoms or molecules disappears or decreases, and ablation or the like occurs, thereby causing peeling. In addition, there is a case where a component contained in the peeling layer becomes a gas and is released due to irradiation with the irradiation light, and separation occurs, and a peeling layer absorbs light and becomes a gas, and the vapor is released to cause separation.

In the laminated body of the present invention, the supporting glass substrate is preferably larger than the processing substrate. Therefore, when the processing substrate and the supporting glass substrate are supported, even when the center positions of the processing substrate and the supporting glass substrate are slightly spaced apart, the edges of the processing substrate do not easily protrude from the supporting glass substrate.

The method for manufacturing a semiconductor package according to the present invention is characterized by comprising the steps of: preparing a laminated body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate; transporting the laminated body; The supporting glass substrate is the supporting glass substrate. Here, the semiconductor of the present invention The technical characteristics (preferred structure and effect) of the manufacturing method of the package are the same as those of the supporting glass substrate and the laminated body of the present invention. Therefore, in this specification, detailed descriptions of the overlapping portions are omitted.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of performing wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the manufacturing method of the semiconductor package of the present invention, the dimensions of the processed substrate are not easily changed during these processes, and therefore these steps can be appropriately performed.

As the processing treatment, in addition to the above, it is also possible to mechanically polish one surface of the processing substrate (usually the surface opposite to the supporting glass substrate), and one surface of the processing substrate (usually the supporting glass substrate). The surface on the opposite side) is subjected to dry etching, and one surface of the processing substrate (usually the surface on the opposite side to the supporting glass substrate) is subjected to wet etching. In addition, in the method for manufacturing a semiconductor package according to the present invention, warpage does not easily occur on the processed substrate, and the rigidity of the laminated body can be maintained. As a result, the processing can be appropriately performed.

The semiconductor package of the present invention is characterized by being manufactured by the manufacturing method of the semiconductor package. Here, the technical features (preferred structure and effects) of the semiconductor package of the present invention overlap with those of the method for manufacturing a support glass substrate, a laminated body, and a semiconductor package of the present invention. Therefore, detailed descriptions of the overlapping portions are omitted in this specification.

An electronic device of the present invention includes a semiconductor package, which is characterized in that the semiconductor package is the semiconductor package. Here, the technical features of the electronic device of the present invention The (preferred structure and effect) overlaps the technical characteristics of the supporting glass substrate, the laminated body, the method for manufacturing a semiconductor package, and the semiconductor package of the present invention. Therefore, detailed descriptions of the overlapping portions are omitted in this specification.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of a laminated body 1 according to the present invention. In FIG. 1, the laminated body 1 includes a support glass substrate 10 and a processing substrate 11. The support glass substrate 10 is attached to the processing substrate 11 in order to prevent the dimensional change of the processing substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processing substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.

As can be seen from FIG. 1, the laminated body 1 is laminated in the order of the supporting glass substrate 10, the peeling layer 12, the adhesive layer 13, and the processing substrate 11. The shape of the supporting glass substrate 10 is determined according to the processing substrate 11. In FIG. 1, the shapes of the supporting glass substrate 10 and the processing substrate 11 are both approximately circular plate shapes. As the release layer 12, for example, a resin that is decomposed by irradiation with a laser can be used. Furthermore, a substance that absorbs laser light with high efficiency and converts it into heat may be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. may be added to the resin. The release layer 12 is formed by plasma chemical vapor deposition (CVD), spin coating by a sol-gel method, or the like. The adhesive layer 13 includes a resin, and is formed by, for example, coating by various printing methods, inkjet methods, spin coating methods, and roll coating methods. Moreover, an ultraviolet curable tape can also be used. After the support layer 13 is peeled off the support glass substrate 10 from the processing substrate 11 by the release layer 12, it is dissolved and removed by a solvent or the like. purple The outer-curing tape can be removed with a peeling tape after irradiating ultraviolet rays.

2 (a) to 2 (f) are conceptual cross-sectional views showing manufacturing steps of a fan out WLP. FIG. 2 (a) shows a state where the adhesive layer 21 is formed on one surface of the support member 20. Optionally, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2 (b), a plurality of semiconductor wafers 22 are attached to the adhesive layer 21. At this time, the active-side surface of the semiconductor wafer 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2 (c), the semiconductor wafer 22 is molded using a resin sealing material 23. As the sealing material 23, a material having less dimensional change after compression molding and less dimensional change during wiring molding is used. Next, as shown in FIGS. 2 (d) and 2 (e), the semiconductor wafer 22 is separated from the support member 20 by the molded processing substrate 24, and then adhered and fixed to the support glass substrate 26 via the adhesive layer 25. At this time, a surface on the side of the surface of the processing substrate 24 opposite to the surface on the side of the embedded semiconductor wafer 22 is disposed on the side of the supporting glass substrate 26. In this way, a laminated body 27 can be obtained. In addition, if necessary, a release layer may be formed between the adhesive layer 25 and the supporting glass substrate 26. Further, after the obtained laminated body 27 is transferred, as shown in FIG. 2 (f), after wiring 28 is formed on the surface of the substrate 24 on the side where the semiconductor wafer 22 is embedded, a plurality of solder bumps 29 are formed. Finally, after the processing substrate 24 is separated from the supporting glass substrate 26, the processing substrate 24 is cut into each semiconductor wafer 22 and used for subsequent packaging steps (FIG. 2 (g)).

[Example 1]

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited in any way by the following examples.

Tables 1 and 2 show examples of the present invention (Sample No. 1 to Sample No. 34).

First, a glass ingredient obtained by blending glass raw materials so as to have a glass composition in a table was placed in a platinum crucible and melted at 1550 ° C. for 4 hours. When the glass batch is melted, it is homogenized by stirring using a platinum stirrer. Then, the molten glass was caused to flow out onto the carbon plate to be formed into a plate shape, and then gradually cooled from a temperature of about 20 ° C higher than the slow cooling point to normal temperature at 3 ° C / min. Each sample obtained, evaluation of a temperature range of 20 ℃ ~ 200 ℃ average linear thermal expansion coefficient α _{20 ~ 200,} average linear thermal expansion coefficient of the temperature range of 30 ℃ ~ 380 ℃ of α _{30 ~ 380,} the density [rho], the strain point Ps, slow cooling point Ta, softening point Ts, high temperature viscosity 10 ^4.0 dPa. Temperature at s, high temperature viscosity 10 ^3.0 dPa. Temperature at s, high temperature viscosity 10 ^2.5 dPa. Temperature at s, high temperature viscosity 10 ^2.0 dPa. Temperature at s, liquidus temperature TL, viscosity η at liquidus temperature TL, Young's modulus E, and ultraviolet transmittance T at a wavelength of 300nm.

The average linear thermal expansion coefficient in the temperature range of 20 ℃ ~ 200 ℃ α _{20 ~ 200,} average linear thermal expansion coefficient in the temperature range of 30 ℃ ~ 380 ℃ α _{30 ~ 380} is measured using the expanded values.

The density ρ is a value measured by a well-known Archimedes method.

The strain point Ps, the slow cooling point Ta, and the softening point Ts are values measured based on the method of the American Society for Testing and Materials (ASTM) C336.

High temperature viscosity 10 ^4.0 dPa. s, 10 ^3.0 dPa. s, 10 ^2.5 dPa. The temperature at s is a value measured by a platinum ball pulling method.

The liquid phase temperature TL is a value obtained by putting glass powder remaining in a 50 mesh (300 μm) through a standard sieve of 30 mesh (500 μm) into a platinum boat, and holding it in a temperature gradient furnace for 24 hours. Obtained by measuring the temperature at which crystals are precipitated with a microscope. The viscosity η at the liquidus temperature is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL using a platinum ball pulling method.

The Young's modulus E is a value measured by a resonance method.

As can be seen from Tables 1 and 2, in Sample No. 1 to Sample No. 34, the average linear thermal expansion coefficient α _{20 to 200 in} a temperature range of 20 ° C to 200 ° C is 81.5 × 10 ^-7 / ° C to 107.8 × 10 ^-7 / ℃, average linear thermal expansion coefficient in the temperature range of 30 ℃ ~ 380 ℃ α _{30 ~ 380} is ^{85.4 × 10 -7 /℃~114.0×10 -7 / ℃} . Therefore, it is considered that sample No. 1 to sample No. 34 are suitable as a supporting glass substrate for supporting a processed substrate in a manufacturing step of a semiconductor package.

[Example 2]

Each sample of [Example 2] was prepared as follows. First, a glass raw material is prepared so that it may become the glass composition of the sample No.1-sample No.34 shown in Table 1, Table 2, and it is supplied to a glass melting furnace and melt | dissolves at 1500 degreeC-1600 degreeC, and it melts The glass was supplied to an overflow down-draw forming device, and each was formed into a plate thickness of 0.7 mm. After the obtained glass substrate (whole plate thickness deviation of about 4.0 μm) was processed to a thickness of Φ300 mm × 0.7 mm, both surfaces thereof were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate are polished while the glass substrate and the pair of polishing pads are rotated together. During the polishing process, control may be performed so that a part of the glass substrate protrudes from the polishing pad. The polishing pad was made of urethane. The average particle diameter of the polishing slurry used in the polishing process was 2.5 μm, and the polishing rate was 15 m / min. With respect to each of the obtained glass substrates subjected to the polishing treatment, a Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Scientific Co., Ltd. was used to measure the overall plate thickness deviation and warpage amount. As a result, the overall plate thickness deviations were less than 1.0 μm, and the warpage amounts were 35 μm or less.

Claims (13)

A laminated body includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, characterized in that the processing substrate includes at least a semiconductor wafer molded with a sealing material, and The average linear thermal expansion coefficient in the temperature range of ℃ to 200 ° C exceeds 81 × 10 ^-7 / ° C and is 110 × 10 ^-7 / ° C or less, and the deviation of the overall plate thickness is 5 μm or less. A laminated body includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, characterized in that the processing substrate includes at least a semiconductor wafer molded with a sealing material, and the supporting glass substrate is at 30 The average linear thermal expansion coefficient in the temperature range of ℃ to 380 ° C exceeds 85 × 10 ^-7 / ° C and is 115 × 10 ^-7 / ° C or less, and the overall plate thickness deviation is 5 μm or less. The laminated body according to item 1 or item 2 of the patent application scope, wherein the supporting glass substrate is used for supporting the processed substrate in a manufacturing step of a semiconductor package. The laminated body according to item 1 or item 2 of the patent application scope, wherein the supporting glass substrate is formed by an overflow down-draw method. The laminated body according to item 1 or item 2 of the scope of patent application, wherein the Young's modulus of the supporting glass substrate is 65 GPa or more. The laminated body according to item 1 or item 2 of the scope of patent application, wherein the glass composition as the supporting glass substrate contains 50% to 80% SiO ₂ and 1% to 20% Al _{2 in} terms of mass%. O ₃ , 0% ~ 20% B ₂ O ₃ , 0% ~ 10% MgO, 0% ~ 10% CaO, 0% ~ 7% SrO, 0% ~ 7% BaO, 0% ~ 7 % ZnO, 0% to 25% Na ₂ O, and 0% to 25% K ₂ O. The laminated body according to item 6 of the scope of patent application, wherein the glass composition as the supporting glass substrate contains 55% to 70% SiO ₂ , 3% to 18% Al ₂ O ₃ , and 0% by mass. % To 8% B ₂ O ₃ , 0% to 5% MgO, 0% to 10% CaO, 0% to 5% SrO, 0% to 5% BaO, 0% to 5% ZnO, 2% to 23% Na ₂ O, and 0% to 20% K ₂ O. The laminated body according to item 1 or item 2 of the scope of patent application, wherein the thickness of the supporting glass substrate is less than 2.0 mm, and the amount of warpage is 60 μm or less. A method for manufacturing a semiconductor package, comprising the steps of: preparing a multilayer body according to any one of claims 1 to 8 of a patent application scope; transporting the multilayer body; and performing processing on the processed substrate Processing. The method of manufacturing a semiconductor package according to item 9 of the scope of patent application, wherein the processing includes a step of wiring on one surface of the processed substrate. The method for manufacturing a semiconductor package according to claim 9 or claim 10, wherein the processing includes a step of forming a solder bump on one surface of the processed substrate. A semiconductor package is characterized in that it is manufactured by using the method for manufacturing a semiconductor package according to any one of items 9 to 11 of the scope of patent application. An electronic device includes a semiconductor package, characterized in that the semiconductor package is the semiconductor package according to item 12 of the scope of patent application.