CN108367961A - The manufacturing method of support glass substrate - Google Patents
The manufacturing method of support glass substrate Download PDFInfo
- Publication number
- CN108367961A CN108367961A CN201680069435.9A CN201680069435A CN108367961A CN 108367961 A CN108367961 A CN 108367961A CN 201680069435 A CN201680069435 A CN 201680069435A CN 108367961 A CN108367961 A CN 108367961A
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- Prior art keywords
- glass substrate
- support glass
- manufacturing
- substrate
- heat treatment
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/242—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
The manufacturing method of the support glass substrate of the present invention is characterized in that, is the manufacturing method of the support glass substrate for supporting processing substrate, which has：Forming process：Shape support glass substrate；And heat treatment procedure：Support glass substrate after forming is heat-treated and the coefficient of thermal expansion of support glass substrate is made to change.
Description
Technical field
The present invention relates to the manufacturing methods of support glass substrate, in particular to the manufacture work in semiconductor package body
The manufacturing method of support glass substrate in sequence for supporting processing substrate.
Background technology
To portable phone, subnotebook PC, PDA (personal digital assistant, Personal Data
) etc. Assistance portable electronic devices require miniaturization and lightweight.Along with this, used in these electronic equipments half
The installation space of conductor chip is also strictly controlled, and the high-density installation of semiconductor chip is becoming project.Thus, in recent years
It is stacked on one another by three-dimensional mounting technique, i.e. by semiconductor chip and carries out wiring connection between each semiconductor chip, from
And realize the high-density installation of semiconductor package body.
In addition, after previous wafer-class encapsulation (WLP) with the state of chip by forming salient point, monolithic is realized using cutting
Change to make.But previous WLP exposes on the basis of being difficult to increase pin (pin) number at the back side of semiconductor chip
It is installed under state, therefore there is a problem of that semiconductor chip is susceptible to defect etc..
Thus, as novel WLP, it is proposed that the WLP of fan out types.The WLP of fan out types can increase number of pins,
In addition, the end by protecting semiconductor chip, can prevent the defect etc. of semiconductor chip.
The WLP of fan out types has：The sealing material of multiple semiconductor chips resin is sealed and forms processing base
After plate, to processing the process that is connected up of a surface of substrate；Form the process etc. of solder bump.
Since these processes are with about 200 DEG C of heat treatment, accordingly, there exist sealing material deformation, processing substrates, and size occurs
The anxiety of variation.If processing substrate occurs change in size, it is difficult to connect up a surface for processing substrate to high-density,
In addition, it is also difficult to properly form solder bump.
From such case, in order to inhibit to process the change in size of substrate, in order to support processing substrate and having studied makes
With glass substrate (referring to patent document 1).
Glass substrate is easy to make surface smoothing and with rigidity.Thus, if glass substrate is used as supporting substrates,
It can securely and correctly support processing substrate.In addition, glass substrate is easy the light such as ultraviolet transmissive light, infrared light.Thus, if
Glass substrate is used as supporting substrates, then it, can be easily by ultraviolet hardening bonding agent etc. come whens adhesive linkage etc. is arranged
Fixed processing substrate and glass substrate.In turn, if the peeling layer etc. for absorbing infrared ray is arranged, also can easily divide
From processing substrate and glass substrate.As other manner, if adhesive linkage etc. is arranged by ultraviolet hardening adhesive tape etc.,
It can easily fix, detach processing substrate and glass substrate.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2015-78113 bulletins
Invention content
Problems to be solved by the invention
However, if the coefficient of thermal expansion of processing substrate and glass substrate mismatches, when working process be easy to happen plus
The change in size (especially buckling deformation) of work substrate.As a result, it is difficult to process substrate a surface to high-density into
Row wiring, in addition, it is also difficult to properly form solder bump.Therefore, it is important that keeping the heat of processing substrate and glass substrate swollen
Swollen coefficient strictly matches.
In the past, it was formed by adjusting the glass of glass substrate, and made the matched coefficients of thermal expansion of glass substrate in processing substrate
Coefficient of thermal expansion.
But even if the glass of adjustment glass substrate can be because of glass base if forming the coefficient of thermal expansion of glass substrate sometimes
The variation of the melting condition, molding condition of plate and deviate desired value.At this time can scrap glass substrate or by glass substrate again
It melts and the coefficient of thermal expansion of glass substrate is made to change, as a result, the manufacturing cost of glass substrate is surging.
Present invention is made in view of the above circumstances, and technical task is to create to shape by easy gimmick
The method that the coefficient of thermal expansion of support glass substrate afterwards is again adjusted to desired value.
The method for solving problem
Various experiments have been repeated in the present inventor, as a result, it has been found that：By being heat-treated to the glass substrate after forming,
Above-mentioned technical task can be solved, and proposes the present invention.That is, the feature of the manufacturing method of the support glass substrate of the present invention exists
In being the manufacturing method of the support glass substrate for supporting processing substrate, which has：Forming process：Forming branch
Hold glass substrate；And heat treatment procedure：Support glass substrate after forming is heat-treated and is made the heat of support glass substrate
The coefficient of expansion changes.
In the manufacturing method of the support glass substrate of the present invention, even if the coefficient of thermal expansion of support glass substrate deviates target
Value, also can be such that the coefficient of thermal expansion of support glass substrate changes to desired value by heat treatment.Branch need not be discarded as a result,
It holds glass substrate, melt again, the manufacturing cost of support glass substrate can be made to realize cheaper.
Second, the manufacturing method of support glass substrate of the invention preferably carries out the support glass substrate after forming process
It is heat-treated and the coefficient of thermal expansion of support glass substrate is made to reduce.
The manufacturing method of third, support glass substrate of the invention preferably makes the maximum temperature of heat treatment higher than (bearing glass
The strain point -100 of glass substrate) DEG C.
4th, the manufacturing method of support glass substrate of the invention, will be hot preferably after the maximum temperature for reaching heat treatment
Treatment temperature is cooled down with 5 DEG C/min of speed below.
5th, the manufacturing method of support glass substrate of the invention is preferably by heat treatment by the warpage of support glass substrate
Amount is reduced to 40 μm or less.Herein, " amount of warpage " refers to that the highest site supported in sintered glass ceramics substrate entirety is put down with minimum
Absolute value between the absolute value of maximum distance between square focus face and minimum site and least square focus face it is total,
It can be measured for example, by Kobelco Research Institute, the SBW-331ML/d of Inc. manufactures.
6th, the preferred heat for preparing the size more than support glass substrate of manufacturing method of support glass substrate of the invention
Processing is with device is given, for heat treatment procedure after the heat treatment uploads the support glass substrate after being set to shape with given device.
7th, the manufacturing method of support glass substrate of the invention is preferably so that plate thickness is 400 μm or more and less than 2mm's
Mode shapes support glass substrate.
8th, the manufacturing method of support glass substrate of the invention shapes supporting glass base preferably by overflow downdraw
Plate.
9th, the manufacturing method of support glass substrate of the invention is preferably provided with grinding process：It is right after heat treatment procedure
The surface of support glass substrate is ground and whole thickness deviation is made to be reduced to less than 2.0 μm.Herein, " whole thickness deviation "
It is the difference of the maximum plate thickness and minimum plate thickness of support glass substrate entirety, it can be for example, by Kobelco Research
The SBW-331ML/d of Institute, Inc. manufacture is measured.
Tenth, the manufacturing method of support glass substrate of the invention is preferably provided with cutting removal step：In heat treatment procedure
Cutting removes the edge part of support glass substrate afterwards.
11st, the manufacturing method of semiconductor package body of the invention is preferably provided with following process：Lamination process makes extremely
Has the laminated body of processing substrate and the support glass substrate for supporting processing substrate less；And processing operation, to stacking
The processing substrate of body is processed, and support glass substrate is made using the manufacturing method of above-mentioned support glass substrate
Make.
12nd, the manufacturing method of semiconductor package body of the invention is preferably processed substrate and at least had to be sealed with sealing material
Made of semiconductor chip.
13rd, the preferred working process of manufacturing method of semiconductor package body of the invention includes one to processing substrate
The processing that surface is connected up.
14th, the preferred working process of manufacturing method of semiconductor package body of the invention is included in one of processing substrate
Surface forms the processing of solder bump.
Description of the drawings
Fig. 1 is the concept stereogram of an example for showing laminated body of the present invention.
Fig. 2 is the concept sectional view of the manufacturing process for the WLP for showing fan out types.
Specific implementation mode
The manufacturing method of the support glass substrate of the present invention described further below.
In the manufacturing method of the support glass substrate of the present invention, it is preferred that allocate glass raw material first and mix, make
Gained melten glass is clarified and is stirred, then supplied after the glass batch is put into glass melting furnace by glass batch
To building mortion, it is configured to plate, to obtain support glass substrate.
Glass batch is preferably prepared in a manner of reaching desired coefficient of thermal expansion.Specifically, it is preferable that
The ratio for processing the semiconductor chip in substrate is few, more than ratio of sealing material in the case of, to reach the glass group of highly expanded
At mode prepare glass batch, conversely, the semiconductor chip in processing substrate ratio is more, sealing material ratio is few
In the case of, the glass to reach low bulk prepares glass batch in the way of forming.
Mean coefficient of linear thermal expansion under 30~380 DEG C of temperature range is being limited to 0 × 10- 7/ DEG C or more and it is insufficient
50×10- 7/ DEG C in the case of, support glass substrate preferably contains SiO according in terms of quality %255~75%, Al2O315~
30%, Li2O 0.1~6%, Na2O+K2O(Na2O and K2The resultant of O) 0~8%, MgO+CaO+SrO+BaO (MgO, CaO, SrO
With the resultant of BaO) 0~10% as glass composition mode prepare glass batch, it is also preferred that contain SiO255~
75%, Al2O310~30%, Li2O+Na2O+K2O(Li2O、Na2O and K2The resultant of O) 0~0.3%, MgO+CaO+SrO+BaO
5~20% mode prepares glass batch, further preferably to contain SiO255~68%, Al2O312~25%, B2O30~
15%, the mode of MgO+CaO+SrO+BaO 5~30% prepares glass batch.Will be under 30~380 DEG C of temperature range
Mean coefficient of linear thermal expansion is limited to 50 × 10- 7/ DEG C or more and less than 70 × 10- 7/ DEG C in the case of, support glass substrate is excellent
Choosing contains SiO according in terms of quality %255~75%, Al2O33~15%, B2O35~20%, MgO 0~5%, CaO 0~
10%, SrO 0~5%, BaO 0~5%, ZnO 0~5%, Na2O 5~15%, K2The side that O 0~10% is formed as glass
Formula prepares glass batch, further preferably to contain SiO264~71%, Al2O35~10%, B2O38~15%, MgO 0
~5%, CaO 0~6%, SrO 0~3%, BaO 0~3%, ZnO 0~3%, Na2O 5~15%, K2The side of O 0~5%
Formula prepares glass batch.Mean coefficient of linear thermal expansion under 30~380 DEG C of temperature range is being limited to 70 × 10- 7/℃
Above and 85 × 10- 7/ it is DEG C below in the case of, support glass substrate preferably contains SiO according in terms of quality %260~75%,
Al2O35~15%, B2O35~20%, MgO 0~5%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0
~5%, Na2O 7~16%, K2O 0~8% prepares glass batch as the mode that glass forms, further preferably to contain
SiO260~68%, Al2O35~15%, B2O35~20%, MgO 0~5%, CaO 0~10%, SrO 0~3%, BaO
0~3%, ZnO 0~3%, Na2O 8~16%, K2The mode of O 0~3% prepares glass batch.By 30~380 DEG C
Mean coefficient of linear thermal expansion under temperature range is limited to more than 85 × 10- 7/ DEG C and be 120 × 10- 7/ it is DEG C below in the case of,
Support glass substrate preferably contains SiO according in terms of quality %245~70% (55~70%), Al2O33~25% (preferably
3~13%), B2O30~8% (preferably 2~8%), P2O50~20%, MgO 0~5%, CaO 0~10%, SrO 0~
5%, BaO 0~5%, ZnO 0~5%, Na2O 10~21%, K2O 0~5% prepares glass as the mode that glass forms and matches
Close material.It is limited to more than 120 × 10 by the mean coefficient of linear thermal expansion under 30~380 DEG C of temperature range- 7/ DEG C and be 165
×10- 7/ it is DEG C below in the case of, support glass substrate preferably contains SiO according in terms of quality %253~65%, Al2O3 3
~13%, B2O30~5%, MgO 0.1~6%, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0~5%,
Na2O+K2O 20~40%, Na2O 12~21%, K2O 7~21% prepares glass batch as the mode that glass forms.Such as
Fruit sets in this way, then is easy to adjust coefficient of thermal expansion to desired value, and devitrification resistance improves, therefore be easily shaped into entirety
The small support glass substrate of thickness deviation.It should be noted that " the average linear thermal expansion system under 30~380 DEG C of temperature range
Number " refers to the value measured using dilatometer.
It can be added into glass batch as fining agent selected from by As2O3、Sb2O3、CeO2、SnO2、F、Cl、SO3
Group (preferably SnO2、Cl、SO3Group) one or more of 0.05~2 mass %.SnO2、SO3With the resultant of Cl
Preferably 0~1 mass %, 100~3000ppm (0.01~0.3 mass %), 300~2500ppm, especially 500~
2500ppm.It should be noted that if SnO2、SO3It is less than 100ppm with the resultant of Cl, then is difficult to enjoy clarifying effect.
From the viewpoint of environment, As is preferably controlled as far as possible2O3、Sb2O3With the use of F, preferably contain substantially no.
Herein, " containing substantially no~" specifically refers to the component content expressed less than 500ppm (quality).From the viewpoint of environment,
Further preferably PbO, Bi are substantially free of in glass composition2O3。
In the manufacturing method of the support glass substrate of the present invention, preferably so that the Young's modulus of support glass substrate reaches
The mode of 60GPa or more (being desired for 65GPa or more, 70GPa or more, especially 75~130GPa) prepares glass batch.
In the case that the ratio of processing the semiconductor chip in substrate is few, ratio of sealing material is more, the whole rigidity of laminated body reduces, and adds
Work substrate is easy warpage in processing operation.Thus, if improving the Young's modulus of support glass substrate, it is easy to inhibit
The buckling deformation for processing substrate, can consolidate and correctly support processing substrate.Herein, " Young's modulus " refers to by being bent altogether
The value that the method for shaking measures.
It is preferred that so that the liquidus temperature of support glass substrate less than 1150 DEG C (be desired for 1120 DEG C or less, 1100 DEG C or less,
1080 DEG C or less, 1050 DEG C or less, 1010 DEG C or less, 980 DEG C or less, 960 DEG C or less, 950 DEG C hereinafter, especially 940 DEG C with
Under) mode prepare glass batch.Furthermore it is preferred that so that the liquid phase viscosity of support glass substrate is 104.8DPas or more
(it is desired for 105.0DPas or more, 105.2DPas or more, 105.4DPas or more, especially 105.6DPas or more) side
Formula prepares glass batch.If set in this way, it is easy to be configured to supporting glass using glass tube down-drawing, especially overflow downdraw
Substrate, therefore be easy to make the small support glass substrate of plate thickness, also, entirety can be reduced not being ground to surface
Thickness deviation.Alternatively, leading to too small amount of grinding, whole thickness deviation can be reduced to less than 2.0 μm, especially less than 1.0 μ
m.As a result, it is cheaper that the manufacturing cost of support glass substrate can also realized.It should be noted that " liquidus temperature " can
By the way that the standard screen of 30 mesh (500 μm) will be passed through and the glass powder remained on the standard screens of 50 mesh (300 μm) puts into platinum boat
Afterwards, it is kept for 24 hours in temperature gradient furnace, and measures the temperature that crystallization is precipitated to calculate." liquid phase viscosity " is carried using platinum ball
Daraf(reciprocal of farad) is measured.
In the manufacturing method of the support glass substrate of the present invention, preferably so that plate thickness reaches 400 μm or more and less than 2mm's
Mode is configured to support glass substrate.The plate thickness of support glass substrate is preferably 400 μm or more, 500 μm or more, 600 μm or more,
700 μm or more, 800 μm or more, 900 μm or more, especially 1000 μm or more.If the plate thickness of support glass substrate is too small,
Mechanical strength reduces, and support glass substrate is easy breakage in the manufacturing process of semiconductor package body.On the other hand, if bearing
The plate thickness of glass substrate is excessive, then the quality of laminated body becomes larger, therefore treatability reduces.In addition, in the system of semiconductor package body
It makes in process, generates the anxiety that laminated body cannot be satisfied the height limitation in the manufacturing device of semiconductor package body.Thus, support glass
The plate thickness of glass substrate preferably less than 2.0mm, it is 1.5mm or less, 1.2mm hereinafter, especially 1.1mm or less.
It is configured to support glass substrate preferably by glass tube down-drawing, especially overflow downdraw.Overflow downdraw is to make melting
Glass is overflowed from the both sides of the eaves gutter shape works of heat resistance, and makes the melten glass of spilling on the lower top of eaves gutter shape works
Interflow forms forming interflow face, the method for carrying out stretch forming downwards on one side in inside glass on one side.In overflow downdraw,
The face that become glass surface does not contact eaves gutter shape refractory material, is shaped in the state of Free Surface.Therefore, it is easy to make plate thickness
Small support glass substrate, also, whole thickness deviation can be reduced not being ground to surface.Alternatively, by few
Whole thickness deviation can be reduced to less than 2.0 μm, especially less than 1.0 μm by the grinding of amount.As a result, branch can be made
The manufacturing cost realization for holding glass substrate is cheaper.
As the manufacturing process of support glass substrate, other than overflow downdraw, such as slot draw can also be used
Method draws down method, float glass process etc. again.
The manufacturing method of the support glass substrate of the present invention is preferably provided with the branch measured before heat treatment procedure after forming
The process for holding the coefficient of thermal expansion of glass substrate.If set in this way, by the coefficient of thermal expansion for considering support glass substrate
Measured value on the basis of, control heat treatment condition (maximum temperature of heat treatment, cooling rate of heat treatment etc.), be easy will branch
The coefficient of thermal expansion for holding glass substrate is adjusted to desired value.
Support glass substrate can be arranged in the manufacturing method of the support glass substrate of the present invention before heat treatment procedure
Cleaning process.Even if it is viscous to prevent accompanying foreign matter from being burnt because of heat treatment if support glass substrate is attached with foreign matter as a result,
In the surface of support glass substrate.
The manufacturing method of the support glass substrate of the present invention have the support glass substrate after forming is heat-treated and
The heat treatment procedure for making the coefficient of thermal expansion of support glass substrate change, but at this time preferably to the bearing glass after forming process
Glass substrate is heat-treated and the coefficient of thermal expansion of support glass substrate is made to reduce.If set in this way, it is easy that glass will be supported
The coefficient of thermal expansion control of glass substrate is desired value.It should be noted that can also make support glass substrate by heat treatment
Coefficient of thermal expansion increases, but at this point, if again for heat treatment procedure after support glass substrate not being annealed fully in forming,
Then the manufacture efficiency of support glass substrate is easily reduced.
In heat treatment procedure, preferably make the average linear thermal expansion system at 30~380 DEG C of the temperature range of support glass substrate
Number reduces by 0.05 × 10- 7~3 × 10- 7/ DEG C, more preferably reduce by 0.1 × 10- 7~3 × 10- 7/ DEG C, further preferably reduce by 0.2
×10- 7~1 × 10- 7/ DEG C, particularly preferably reduce by 0.3 × 10- 7~0.8 × 10- 7/℃.The thermal expansion system of support glass substrate
Number changes because of the variation of melting condition, molding condition etc..Its amplitude of fluctuation is simultaneously little, is thermally expanded needing tight adjustment
On the way, these small variations will become problem to the use of the support glass substrate of coefficient.And, it is difficult to manage melting condition,
Molding condition etc. and by coefficient of thermal expansion control be desired value.Thus, if adjusting heat treatment condition (heat in heat treatment procedure
The maximum temperature of processing, cooling rate of heat treatment etc.), it is easy if even if then imprecision manages melting condition, molding condition etc.
It is desired value by the coefficient of thermal expansion control of support glass substrate.
The manufacturing method of the support glass substrate of the present invention is preferably provided with carries out hot place to the support glass substrate after forming
The heat treatment procedure managed and the density of support glass substrate is made to change, at this point, it is preferred that the supporting glass after forming process
Substrate is heat-treated and the density of support glass substrate is made to increase.If set in this way, tight adjustment bearing glass is being needed
In the case of the density of glass substrate, it is easy the density domination of support glass substrate to be desired value.It should be noted that passing through heat
Processing can also be such that the density of support glass substrate reduces, but at this point, if not move back support glass substrate fully in forming
Again for heat treatment procedure after fire, then the manufacture efficiency of support glass substrate is easily reduced.
The rising degree of the density of support glass substrate is related with the reduction degree of the coefficient of thermal expansion of support glass substrate.
Thus, if measuring the rising value of the density of support glass substrate, it can simply estimate the thermal expansion of support glass substrate
The decreasing value of coefficient.In heat treatment procedure, the density of support glass substrate is preferably made to rise 0.001~0.05g/cm3, further
It is preferred that rising 0.004~0.03g/cm3, particularly preferably rise 0.007~0.015g/cm3.If the rising value of density is in upper
It states outside range, is then difficult to estimate the decreasing value of the coefficient of thermal expansion of support glass substrate.
The maximum temperature of heat treatment preferably greater than (strain point -100 of support glass substrate) DEG C is (support glass substrate
Strain point -50) DEG C or more, (strain point -30 of support glass substrate) DEG C or more, support glass substrate strain point with
Upper, (strain point+10 of support glass substrate) DEG C or more, (strain point+20 of support glass substrate) DEG C or more, (supporting glass
The strain point+30 of substrate) DEG C or more, especially (strain point+50 of support glass substrate) DEG C or more.If the highest of heat treatment
Temperature is too low, then the heat treatment time for being used to that the coefficient of thermal expansion of support glass substrate to be made to change is improper elongated, heat treatment
Efficiency is easily reduced.In turn, it is difficult to so that the coefficient of thermal expansion of support glass substrate is reduced by heat treatment.On the other hand, such as
The maximum temperature of fruit heat treatment is excessively high, then support glass substrate is easy thermal deformation.Thus, the maximum temperature of heat treatment is preferably
(strain point+150 of support glass substrate) DEG C or less, (strain point+120 of support glass substrate) DEG C or less.
In heat treatment procedure, in order to be safely extracted out support glass substrate from heat-treatment furnace, need from heat treatment most
High-temperature cools down.Its cooling rate is preferably 5 DEG C/min or less, 4 DEG C/min or less, 3 DEG C/min or less, 2 DEG C/minute
Below clock, 1 DEG C/min hereinafter, especially 0.8 DEG C/min or less.If cooling rate is too fast, it is easy after heat treatment procedure
Thermal strain is remained in support glass substrate, there are supporting glass bases when in addition, taking out support glass substrate from heat-treatment furnace
The anxiety of plate breakage.On the other hand, if cooling rate is excessively slow, for making the coefficient of thermal expansion of support glass substrate change
Heat treatment time it is improper elongated, heat treatment efficiency is easily reduced.Thus, cooling rate be preferably 0.01 DEG C/min or more,
0.05 DEG C/min or more, 0.1 DEG C/min or more, 0.2 DEG C/min or more, especially 0.5 DEG C/min or more.
It is preferred that the heat treatment for preparing the size more than support glass substrate is uploaded in the heat treatment with given device with device is given
It is set to after the support glass substrate after shape for heat treatment procedure.If set in this way, when being heat-treated, branch can be reduced
The temperature for holding glass substrate is uneven.It should be noted that if the ruler of the heat treatment size and support glass substrate for giving device
Very little same or less, then a part for support glass substrate is easy to expose from heat treatment with device is given, which is easy hair
Heat deforms.
In the manufacturing method of the support glass substrate of the present invention, the amount of warpage of support glass substrate is preferably made by heat treatment
It is reduced to 40 μm or less.Also, in order to reduce the amount of warpage of support glass substrate, preferably configured in the top of support glass substrate
Heat resistant substrate is heat-treated while support glass substrate is clamped with heat resistant substrate with given device with heat treatment.It needs
It is bright, as heat resistant substrate, mullite substrate, aluminum oxide substrate etc. can be used.Furthermore it is preferred that multiple being laminated with
It is heat-treated in the state of support glass substrate.It is layered in the amount of warpage of the support glass substrate of stacking lower section as a result, because of layer
It is stacked in the quality of the support glass substrate of top and is suitably reduced.And then the heat treatment effect of support glass substrate can be improved
Rate.
The manufacturing method of the support glass substrate of the present invention is preferably provided with after heat treatment procedure to support glass substrate
Surface is ground and whole thickness deviation is made to be reduced to the grinding process less than 2.0 μm.It, can be with as the method for milled processed
Using various methods, but preferably the two sides of support glass substrate is clamped with a pair of of grinding pad, make on one side support glass substrate with
A pair of of grinding pad rotates together with, the method being ground on one side to support glass substrate.Further preferably a pair of grinding pad
Outer diameter it is different, preferably ground in such a way that a part for support glass substrate is intermittently exposed from grinding pad in grinding
Mill processing.Thus it is easily reduced whole thickness deviation, in addition, amount of warpage is also easily reduced.It should be noted that in milled processed
In, grinding depth is not particularly limited, grinding depth is preferably 50 μm or less, 30 μm or less, 20 μm hereinafter, especially 10 μm with
Under.It is smaller to grind depth, then the productivity of support glass substrate can more improve.
It is preferred that so that the whole thickness deviation of support glass substrate less than 2.0 μm, for 1 μm or less, especially 0.1 or more and
Mode less than 1 μm is ground the surface of support glass substrate, furthermore it is preferred that so that the surface arithmetic of support glass substrate
Average roughness Ra reach 5nm or less, 2nm or less, 1.5nm or less, 1nm or less, 0.8nm or less, especially up to 0.5nm with
Under mode the surface of support glass substrate is ground.Whole thickness deviation is smaller or surface accuracy is higher, then more holds
Easily improve the precision of working process.Wiring precision can be especially improved, therefore highdensity wiring can be carried out.In addition, branch
The intensity for holding glass substrate improves, and support glass substrate and laminated body are difficult to breakage.It should be noted that " arithmetic mean roughness
Degree Ra " is measured using atomic force microscope (AFM).
The manufacturing method of the support glass substrate of the present invention is preferably provided with the cutting after heat treatment procedure and removes supporting glass
The cutting removal step of the edge part of substrate further preferably has the side that the cutting after grinding process removes support glass substrate
The cutting removal step of edge.In heat treatment procedure, there is the amount of warpage of the edge part compared with the central portion of support glass substrate
The tendency of bigger.Thus, if cutting removes the edge part of support glass substrate after heat treatment procedure, bearing can be reduced
The amount of warpage of glass substrate.
When cutting removes the edge part of support glass substrate, preferably from the support glass substrate Punching Technology of rectangle at substantially
Disk-shaped or wafer-like.If set in this way, it is readily applied to the manufacturing process of semiconductor package body.As needed, also may be used
To be processed into shape, the shape such as rectangle in addition to this.The out of roundness for the support glass substrate being punched into (wherein do not include
Notch section) it is preferably 1mm or less, 0.1mm or less, 0.05mm hereinafter, particularly preferably 0.03mm or less.Out of roundness is smaller, then
More it is readily applied to the manufacturing process of semiconductor package body.It should be noted that the definition of out of roundness be from wafer profile most
Big value subtracts to be worth obtained from minimum value.
The manufacturing method of the support glass substrate of the present invention is preferably provided with after cutting removal step in support glass substrate
A part of periphery formed notch section (aligned portions) notch manufacturing procedure.As a result, it is connected to the positioning elements such as dowel pins
The notch section of support glass substrate is easy to fix support glass substrate progress position.As a result, processing substrate and bearing glass
Glass substrate is easy to align with.It should be noted that if also forming notch section to processing substrate and it being made to abut positioning element, add
Work substrate is more easily aligned with support glass substrate.
The manufacturing method of the support glass substrate of the present invention is preferably provided with after cutting removal step to support glass substrate
End face (end face for including notch section) carry out chamfer machining chamfering process.Thereby, it is possible to prevent from generating glass powder from end face
Deng.The chamfer machining for having used trough of belt grinding stone, the chamfer machining etc. of the acid etching based on hydrofluoric acid etc. may be used in chamfer machining.
In the manufacturing method of the support glass substrate of the present invention, preferably support glass substrate is not carried out at ion exchange
Reason.If carrying out ion-exchange treatment, the manufacturing cost of support glass substrate is surging, and then is difficult to lower support glass substrate
Whole thickness deviation.
The manufacturing method of the semiconductor package body of the present invention is characterized in that having following process：Lamination process makes extremely
Has the laminated body of processing substrate and the support glass substrate for supporting processing substrate less；And processing operation, to stacking
The processing substrate of body is processed, and support glass substrate is made using the manufacturing method of above-mentioned support glass substrate
Make.In the manufacturing method of the semiconductor package body of the present invention, the manufacture of the support glass substrate due to having described the present invention
The technical characteristic of method, therefore omit the detailed record of the part.
In the manufacturing method of the semiconductor package body of the present invention, preferably it is arranged between processing substrate and support glass substrate
Adhesive linkage.Adhesive linkage is preferably resin, preferably such as thermosetting resin, photo-curable resin (especially ultraviolet curable resin)
Deng.Furthermore it is preferred that the heat resistance of the heat treatment in the manufacturing process with tolerable semiconductor package body.Adhesive linkage is difficult as a result,
To be melted in the manufacturing process of semiconductor package body, the precision of working process can be improved.It should be noted that due to
Processing substrate and support glass substrate are easily fixed, accordingly it is also possible to which ultraviolet hardening adhesive tape is used as adhesive linkage.
In turn, preferably processing substrate and support glass substrate between, more particularly, in processing substrate and adhesive linkage it
Between peeling layer is set.If setting in this way, after carrying out specific working process to processing substrate, it is easy to process substrate from branch
It holds and is removed on glass substrate.From the viewpoint of productivity, process substrate stripping preferably by the irradiation light of laser etc. come into
Row.As laser light source, YAG laser (wavelength 1064nm), semiconductor laser (wavelength is 780~1300nm) etc. can be used
Infrared light laser light source.In addition, peeling layer can use the resin decomposed by irradiating infrared laser.In addition,
Efficient absorption infrared ray can be added into resin and is converted to the substance of heat.Such as carbon black, stone can also be added into resin
Ink powder, particle metal powder, dyestuff, pigment etc..
Peeling layer is constituted by " stripping in layer " or the material of " interface peel " occur by irradiation lights such as laser.Change speech
It, by irradiation some strength light when atom or molecule in atom between intermolecular bonding force disappear or reduce, burn
Lose (ablation) etc. and peeling-off material composition.It should be noted that there are following situations：Pass through the photograph of irradiation light
It penetrates, the ingredient for including in peeling layer forms gas and discharges down to the case where separation；Light is absorbed with peeling layer and forms gas,
Steam release is down to the case where separation.
In the manufacturing method of the semiconductor package body of the present invention, the size of processing substrate is preferably made to be more than support glass substrate
Size.When processing substrate being laminated with support glass substrate as a result, even if be offset slightly from the center of the two
In the case of, the edge part for processing substrate is also difficult to expose from support glass substrate.
The manufacturing method of the semiconductor package body of the present invention is preferably also equipped with the transportation process for carrying laminated body.Thus, it is possible to
Improve the treatment effeciency of working process.It should be noted that " transportation process " is not necessarily required to separate with " processing operation "
It carries out, can also be carried out at the same time.
The present invention semiconductor package body manufacturing method in, working process be preferably to process substrate a surface into
The processing or form the processing of solder bump on a surface of processing substrate that row connects up.The semiconductor package body of the present invention
Manufacturing method in, when carrying out these processing, processing substrate is difficult to happen change in size, therefore can suitably carry out these works
Sequence.
Can also be (to be typically and branch to processing a surface of substrate other than above-mentioned processing as working process
Hold the surface of glass substrate opposite side) it carries out the processing of mechanical lapping, (be typically and bearing to a surface for processing substrate
The surface of glass substrate opposite side) it carries out the processing of dry-etching, (be typically and bearing glass to a surface for processing substrate
The surface of glass substrate opposite side) carry out wet etching any one of processing.It should be noted that the semiconductor of the present invention
In the manufacturing method of packaging body, processing substrate is difficult to happen warpage, and is able to maintain that the rigidity of laminated body.As a result, energy
It is enough suitably to carry out above-mentioned working process.
It is further illustrated the present invention with reference to attached drawing.
Fig. 1 is the concept stereogram of an example for showing laminated body 1 of the present invention.In Fig. 1, laminated body 1 has bearing
Glass substrate 10 and processing substrate 11.Support glass substrate 10 processes the change in size of substrate 11 in order to prevent and fits in processing
Substrate 11.It is configured with peeling layer 12 and adhesive linkage 13 between support glass substrate 10 and processing substrate 11.Peeling layer 12 and branch
It holds glass substrate 10 to be in contact, adhesive linkage 13 is in contact with processing substrate 11.
As shown in Figure 1, laminated body 1 is stacked gradually configured with support glass substrate 10, peeling layer 12, adhesive linkage 13, processing
Substrate 11.The shape of support glass substrate 10 determines, in Fig. 1, support glass substrate 10 and processing according to processing substrate 11
The shape of substrate 11 is substantially disk-shaped.The resin for example decomposed by irradiating laser can be used in peeling layer 12.This
Outside, efficient absorption laser can also be added into resin and is converted to the substance of heat.Such as carbon black, graphite powder, particle metal powder
End, dyestuff, pigment etc..Peeling layer 12 is formed by plasma CVD, spin coating based on sol-gel method etc..Adhesive linkage 13
It is made of resin, is coated to be formed for example, by various print processes, ink-jet method, spin-coating method, rolling method etc..In addition it is also possible to
Use ultraviolet hardening adhesive tape.Adhesive linkage 13 peels support glass substrate 10 off by using peeling layer 12 from processing substrate 11
Afterwards, solvent etc. is recycled to carry out dissolving removing.Ultraviolet hardening adhesive tape can be by after irradiating ultraviolet light, utilizing stripping glue
Bring removing.
Fig. 2 is the concept sectional view of the manufacturing process for the WLP for showing fan out types.(a) of Fig. 2 is shown in bearing part
The state of adhesive linkage 21 is formed on 20 surface.It as needed, can also be between bearing part 20 and adhesive linkage 21
It is formed with peeling layer.Then, as shown in (b) of Fig. 2, multiple semiconductor chips 22 are attached on adhesive linkage 21.At this point, making partly to lead
The surface of effective side of body chip 22 contacts adhesive linkage 21.Then, as shown in (c) of Fig. 2, by the resin of semiconductor chip 22
Sealing material 23 seals.Sealing material 23 using after compression molding change in size, be configured to wiring when the few material of change in size.
Then, it as shown in (d) of Fig. 2, (e), isolates after being sealed with the processing substrate 24 of semiconductor chip 22, borrows from bearing part 20
It helps adhesive linkage 25 and is adhesively fixed with support glass substrate 26.At this point, among the surface of processing substrate 24, and it is embedded with
The opposite side surface in one side surface of semiconductor chip 22 is configured in 26 side of support glass substrate.It operates, can obtain in this way
To laminated body 27.It should be noted that as needed, stripping can also be formed between adhesive linkage 25 and support glass substrate 26
Layer.In turn, after carrying gained laminated body 27, as shown in (f) of Fig. 2, semiconductor chip 22 is embedded with process substrate 24
After one side surface forms wiring 28, multiple solder bumps 29 are re-formed.Finally, processing substrate is isolated from support glass substrate 26
After 24, processing substrate 24 is cut according to each semiconductor chip 22, and for subsequent packaging process.In addition, bearing
Glass substrate 26 via based on HCl etc. acid processing after for recycling ((g) of Fig. 2).
Embodiment
Hereinafter, illustrating the present invention based on embodiment.It should be noted that embodiment below is simple illustration.This
Invention is not limited to the following embodiments completely.
Table 1,2 shows the embodiment of the present invention (sample No.1~7,9~22) and comparative example (sample No.8).
[table 1]
[table 2]
Following operation, makes sample No.1~7.First, contain SiO according in terms of quality %265.6%, Al2O3
8.0%, B2O39.1%, Na2O 12.8%, CaO 3.2%, ZnO 0.9%, SnO20.3%, Sb2O30.1% is used as glass
The mode of composition is allocated glass raw material and is mixed, and after obtaining glass batch, supply is carried out to glass melting furnace and with 1550 DEG C
Melting, gained melten glass then, clarified and stirred, be then supplied to the building mortion of overflow downdraw, so that plate
The mode that thickness reaches 0.7mm is formed.Thereafter, gained glass substrate is cut rectangular.It should be noted that being directed to gained
Glass substrate is 519 DEG C when measuring strain point using the method that ASTM C336 are recorded.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It should be noted that sample No.8 shows not carry out the glass substrate after the forming of above-mentioned heat treatment.
In turn, for the glass substrate after heat treatment, density is measured using Archimedes method.
It can be defined by table 1, the reduction of coefficient of thermal expansion is observed in sample No.1~7 by being specifically heat-treated.If
Using these data, and suitably adjust heat treatment condition, then can make the coefficient of thermal expansion of the glass substrate after forming change to
Desired value.In turn, the rising of density is observed in sample No.1~7 by being specifically heat-treated.Thus, if appropriate adjustment heat
Treatment conditions can also then make the variations in density of the glass substrate after forming to desired value.
Following operation, makes sample No.9,10.First, contain SiO according in terms of quality %26 1.7%, Al2O3
18.0%, B2O30.5%, Na2O 14.5%, K2O 2.0%, MgO 3.0%, SnO20.3% mode as glass composition
Allotment glass raw material simultaneously mixes, and after obtaining glass batch, supply is melted to glass melting furnace and with 1600 DEG C, then,
Gained melten glass is clarified and stirred, the building mortion of overflow downdraw is then supplied to, so that plate thickness reaches 1.1mm
Mode be formed.Thereafter, gained glass substrate is cut rectangular.It should be noted that it is directed to gained glass substrate, profit
It it is 567 DEG C when measuring strain point with the method that ASTM C336 are recorded.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.9,10 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.11,12.First, contain SiO according in terms of quality %256.2%, Al2O3
13.0%, B2O32.0%, Na2O 14.5%, K2O 4.9%, MgO 2.0%, CaO 2.0%, ZrO24.0%, SnO2
0.35%, Sb2O30.05%, CeO21.0% mode is allocated glass raw material and is mixed, and after obtaining glass batch, supply is extremely
Glass melting furnace is simultaneously melted with 1600 DEG C, then, gained melten glass is clarified and is stirred, overflow is then supplied to
The building mortion of glass tube down-drawing, is formed in a manner of so that plate thickness is reached 1.1mm.Thereafter, gained glass substrate is cut into square
Shape.It it is 558 DEG C when measuring strain point using the method that ASTM C336 are recorded it should be noted that being directed to gained glass substrate.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.11,12 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.13,14.First, contain SiO according in terms of quality %260.4%, Al2O3
10.7%, Na2O 15.5%, K2O 8.8%, MgO 1.7%, CaO 2.6%, Sb2O30.3% mode allocates glass raw material
And mix, after obtaining glass batch, supply is melted to glass melting furnace and with 1400 DEG C, then, gained is melted glass
Glass is clarified and is stirred, and is then supplied to the building mortion of overflow downdraw, is carried out into a manner of so that plate thickness is reached 1.1mm
Shape.Thereafter, gained glass substrate is cut rectangular.It should be noted that being directed to gained glass substrate, ASTM C336 are utilized
It it is 452 DEG C when the method for record measures strain point.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.13,14 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.15,16.First, contain SiO according in terms of quality %260.4%, Al2O3
8.7%, Na2O 13.6%, K2O 12.7%, MgO 1.6%, CaO 2.5%, Sb2O30.2%, SnO20.3% mode tune
Glazing raw material simultaneously mixes, and after obtaining glass batch, supply is melted to glass melting furnace and with 1350 DEG C, then, will
Gained melten glass is clarified and is stirred, and the building mortion of overflow downdraw is then supplied to, so that plate thickness reaches 1.1mm's
Mode is formed.Thereafter, gained glass substrate is cut rectangular.It should be noted that being directed to gained glass substrate, utilize
It it is 445 DEG C when the method that ASTM C336 are recorded measures strain point.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.15,16 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.17,18.First, contain SiO according in terms of quality %266.1%, Al2O3
8.5%, B2O312.4%, Na2O 8.4%, CaO 3.3%, ZnO 1.0%, SnO20.3% mode allocates glass raw material
And mix, after obtaining glass batch, supply is melted to glass melting furnace and with 1500 DEG C, then, gained is melted glass
Glass is clarified and is stirred, and is then supplied to the building mortion of overflow downdraw, is carried out into a manner of so that plate thickness is reached 1.1mm
Shape.Thereafter, gained glass substrate is cut rectangular.It should be noted that being directed to gained glass substrate, ASTM C336 are utilized
It it is 532 DEG C when the method for record measures strain point.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.17,18 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.19,20.First, contain SiO according in terms of quality %258.1%, Al2O3
13.0%, Li2O 0.1%, Na2O 14.5%, K2O 5.5%, MgO 2.0%, CaO 2.0%, ZrO24.5%, SnO2
0.3% mode is allocated glass raw material and is mixed, and after obtaining glass batch, supply is carried out to glass melting furnace and with 1500 DEG C
Melting, gained melten glass then, clarified and stirred, be then supplied to the building mortion of overflow downdraw, so that plate
The mode that thickness reaches 0.7mm is formed.Thereafter, gained glass substrate is cut rectangular.It should be noted that being directed to gained
Glass substrate is 517 DEG C when measuring strain point using the method that ASTM C336 are recorded.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.19,20 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
Following operation, makes sample No.21,22.First, contain SiO according in terms of quality %247.5%, Al2O3
23.0%, P2O513.1%, Na2O 14.7%, MgO 1.5%, SnO20.2% mode is allocated glass raw material and is mixed, and obtains
To after glass batch, supply is melted to glass melting furnace and with 1500 DEG C, and then, gained melten glass is clarified
And stir, it is then supplied to the building mortion of overflow downdraw, is formed in a manner of so that plate thickness is reached 0.7mm.Thereafter, will
The cutting of gained glass substrate is rectangular.It should be noted that it is directed to gained glass substrate, the method recorded using ASTM C336
It it is 595 DEG C when measuring strain point.
Then, prepare the heat treatment of the size more than glass substrate with device is given, loaded on given device in the heat treatment
Glass substrate after forming is put into after further loading heat resistant substrate on the glass substrate into electric furnace.Then, will
Until being warming up to the maximum temperature described in table in electric furnace, after being kept with the time described in table under the maximum temperature,
It will be cooled down with the cooling rate described in table in electric furnace.
For the glass substrate after heat treatment, measured using dilatometer (DIL402C of NETZSCH JAPAN companies manufacture)
The mean coefficient of linear thermal expansion at 30~380 DEG C of mean coefficient of linear thermal expansion and temperature range at 20~220 DEG C of temperature range.
It can be defined by table 2, if sample No.21,22 suitably adjusting heat treatment condition, the heat of glass substrate can be made swollen
Swollen coefficient is changed to desired value.
From table 1,2：If suitably adjusting heat treatment condition, the glass substrate with various glass compositions can be made
Coefficient of thermal expansion change to desired value.
In turn, by various glass substrates (sample No.1~7,9~22 after heat treatment：Whole thickness deviation is about 4.0 μ
M) after punching into φ 300mm, two surfaces of glass substrate are ground using grinding device.Specifically, by glass
A pair of of grinding pad that two surface outer diameters of glass substrate are different is clamped, and glass substrate is made to be revolved together with a pair of of grinding pad on one side
Turn, two surfaces of glass substrate are ground on one side.When being ground, once in a while with a part for glass substrate
The mode exposed from grinding pad is controlled.It should be noted that grinding pad is set as polyurethane system, used when being ground
Grinding slurry average grain diameter be set as 2.5 μm, grinding rate is set as 15m/ minutes.The glass base respectively ground for gained
Plate is measured by Kobelco Research Institute, the Bow/Warp measurement device SBW-331ML/d of Inc. manufactures
Whole thickness deviation and amount of warpage.As a result, whole thickness deviation difference is less than 1.0 μm, amount of warpage is respectively 35 μm or less.
Reference sign
1,27 laminated body
10,26 support glass substrate
11,24 processing substrate
12 peeling layers
13,21,25 adhesive linkage
20 bearing parts
22 semiconductor chips
23 sealing material
28 wirings
29 solder bumps
Claims (14)
1. a kind of manufacturing method of support glass substrate, which is characterized in that be the support glass substrate for supporting processing substrate
Manufacturing method,
The manufacturing method has：
Forming process：Shape support glass substrate；With
Heat treatment procedure：Support glass substrate after forming is heat-treated and the coefficient of thermal expansion of support glass substrate is made to send out
It changes dynamic.
2. the manufacturing method of support glass substrate according to claim 1, which is characterized in that the bearing after forming process
Glass substrate is heat-treated and the coefficient of thermal expansion of support glass substrate is made to reduce.
3. the manufacturing method of support glass substrate according to claim 1 or 2, which is characterized in that make the highest of heat treatment
Temperature is higher than (strain point -100 of support glass substrate) DEG C.
4. the manufacturing method of support glass substrate described in any one of claim 1 to 3, which is characterized in that reach
After the maximum temperature of heat treatment, heat treatment temperature is cooled down with 5 DEG C/min of speed below.
5. the manufacturing method of support glass substrate according to any one of claims 1 to 4, which is characterized in that utilize heat
The amount of warpage of support glass substrate is reduced to 40 μm or less by processing.
6. the manufacturing method of support glass substrate according to any one of claims 1 to 5, which is characterized in that prepare big
In the given device of heat treatment of the size of support glass substrate, the supporting glass after being set to shape is uploaded with given device in the heat treatment
For heat treatment procedure after substrate.
7. according to the manufacturing method of support glass substrate according to any one of claims 1 to 6, which is characterized in that so that plate
Thickness is 400 μm or more and the mode less than 2mm shapes support glass substrate.
8. the manufacturing method of support glass substrate according to any one of claims 1 to 7, which is characterized in that it is utilized
Overflow downdraw shapes support glass substrate.
9. according to the manufacturing method of support glass substrate according to any one of claims 1 to 8, which is characterized in that it has
Grinding process：After heat treatment procedure, the surface of support glass substrate is ground and whole thickness deviation is made to reduce
To less than 2.0 μm.
10. according to the manufacturing method of support glass substrate according to any one of claims 1 to 9, which is characterized in that it has
Cut removal step：Cutting removes the edge part of support glass substrate after heat treatment procedure.
11. a kind of manufacturing method of semiconductor package body, which is characterized in that have following process：
Lamination process makes the laminated body at least having processing substrate and the support glass substrate for supporting processing substrate；With
Processing operation is processed the processing substrate of laminated body,
And support glass substrate is made using the manufacturing method of the support glass substrate described in any one of claim 1~10
Make.
12. the manufacturing method of semiconductor package body according to claim 11, which is characterized in that processing substrate at least has
The semiconductor chip being sealed to form with sealing material.
13. the manufacturing method of semiconductor package body according to claim 11 or 12, which is characterized in that working process includes
The processing that a surface to processing substrate is connected up.
14. the manufacturing method of the semiconductor package body according to any one of claim 11~13, which is characterized in that processing
Processing is included in the processing of the surface formation solder bump of processing substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015246131 | 2015-12-17 | ||
| JP2015-246131 | 2015-12-17 | ||
| PCT/JP2016/086427 WO2017104513A1 (en) | 2015-12-17 | 2016-12-07 | Method of manufacturing a glass support plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108367961A true CN108367961A (en) | 2018-08-03 |
Family
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|---|---|---|---|
| CN201680069435.9A Pending CN108367961A (en) | 2015-12-17 | 2016-12-07 | The manufacturing method of support glass substrate |
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| Country | Link |
|---|---|
| JP (2) | JP6987356B2 (en) |
| KR (1) | KR102588111B1 (en) |
| CN (1) | CN108367961A (en) |
| TW (1) | TWI701221B (en) |
| WO (1) | WO2017104513A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2021322B1 (en) * | 2018-06-28 | 2020-01-06 | Corning Inc | Continuous methods of making glass ribbon and as-drawn glass articles from the same |
| WO2020005555A1 (en) | 2018-06-28 | 2020-01-02 | Corning Incorporated | Continuous methods of making glass ribbon and as-drawn glass articles from the same |
| WO2020018408A1 (en) | 2018-07-16 | 2020-01-23 | Corning Incorporated | Methods for ceramming glass with nucleation and growth density and viscosity changes |
| WO2020018285A1 (en) | 2018-07-16 | 2020-01-23 | Corning Incorporated | Methods of ceramming glass articles having improved warp |
| WO2020018290A1 (en) * | 2018-07-16 | 2020-01-23 | Corning Incorporated | Setter plates and methods of ceramming glass articles using the same |
| US11014848B2 (en) | 2018-07-16 | 2021-05-25 | Corning Incorporated | Glass ceramic articles having improved properties and methods for making the same |
| CN113692395B (en) | 2019-01-28 | 2023-10-31 | 康宁股份有限公司 | Glass ceramic articles, compositions, and methods of making the same |
| JP2022547308A (en) | 2019-09-13 | 2022-11-11 | コーニング インコーポレイテッド | A continuous method for forming a glass ribbon using a gyrotron microwave heating device |
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| JP4792705B2 (en) * | 2003-04-03 | 2011-10-12 | 旭硝子株式会社 | Silica glass containing TiO2 and method for producing the same |
| JP5332085B2 (en) * | 2006-06-28 | 2013-11-06 | 日本電気硝子株式会社 | Manufacturing method of glass substrate for flat panel display |
| WO2014073455A1 (en) | 2012-11-09 | 2014-05-15 | 日本電気硝子株式会社 | Glass film laminate and method for producing electronic/electric device |
| JP6593669B2 (en) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | Support glass substrate and carrier using the same |
| JP6379678B2 (en) * | 2014-05-29 | 2018-08-29 | 日本電気硝子株式会社 | Manufacturing method of glass substrate |
| CN105392741B (en) * | 2014-06-30 | 2018-04-10 | 安瀚视特控股株式会社 | The manufacture method and sheet glass manufacturing apparatus of plate glass |
| JP6742593B2 (en) * | 2015-01-05 | 2020-08-19 | 日本電気硝子株式会社 | Method for manufacturing supporting glass substrate and method for manufacturing laminated body |
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2016
- 2016-12-07 WO PCT/JP2016/086427 patent/WO2017104513A1/en active Application Filing
- 2016-12-07 KR KR1020187014644A patent/KR102588111B1/en active IP Right Grant
- 2016-12-07 JP JP2017556000A patent/JP6987356B2/en active Active
- 2016-12-07 CN CN201680069435.9A patent/CN108367961A/en active Pending
- 2016-12-08 TW TW105140524A patent/TWI701221B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6987356B2 (en) | 2021-12-22 |
| KR102588111B1 (en) | 2023-10-12 |
| JP2022025147A (en) | 2022-02-09 |
| WO2017104513A1 (en) | 2017-06-22 |
| TW201731783A (en) | 2017-09-16 |
| KR20180095513A (en) | 2018-08-27 |
| JP7268718B2 (en) | 2023-05-08 |
| JPWO2017104513A1 (en) | 2018-10-04 |
| TWI701221B (en) | 2020-08-11 |
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