JP6987356B2 - Manufacturing method of support glass substrate - Google Patents

Description

The present invention relates to a method for manufacturing a support glass substrate, and more specifically, to a method for manufacturing a support glass substrate for supporting a processed substrate in a semiconductor package manufacturing process.

Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space for semiconductor chips used in these electronic devices is also severely limited, and high-density mounting of semiconductor chips has become an issue. Therefore, in recent years, a three-dimensional mounting technology, that is, a high-density mounting of a semiconductor package has been aimed at by stacking semiconductor chips and connecting each semiconductor chip by wiring.

Further, the conventional wafer level package (WLP) is manufactured by forming bumps in the state of a wafer and then individualizing them by dicing. However, the conventional WLP has a problem that it is difficult to increase the number of pins and the semiconductor chip is easily chipped because the back surface of the semiconductor chip is exposed.

Therefore, as a new WLP, a fan-out type WLP has been proposed. The fan-out type WLP can increase the number of pins, and by protecting the end portion of the semiconductor chip, it is possible to prevent the semiconductor chip from being chipped or the like.

The fan-out type WLP has a step of molding a plurality of semiconductor chips with a resin encapsulant to form a processed substrate, and then wiring to one surface of the processed substrate, a step of forming solder bumps, and the like.

Since these steps involve a heat treatment at about 200 ° C., the encapsulant may be deformed and the size of the processed substrate may change. When the dimensions of the processed substrate change, it becomes difficult to wire the processed substrate at a high density to one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.

Under these circumstances, it has been studied to use a glass substrate to support the processed substrate in order to suppress the dimensional change of the processed substrate (see Patent Document 1).

The glass substrate is easy to smooth the surface and has rigidity. Therefore, if a glass substrate is used as the support substrate, the processed substrate can be firmly and accurately supported. Further, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Further, by providing a release layer or the like that absorbs infrared rays, the processed substrate and the glass substrate can be easily separated. As another method, if an adhesive layer or the like is provided with an ultraviolet curable tape or the like, the processed substrate and the glass substrate can be easily fixed and separated.

Japanese Unexamined Patent Publication No. 2015-78113

By the way, if the coefficients of thermal expansion of the processed substrate and the glass substrate are inconsistent, dimensional changes (particularly, warpage deformation) of the processed substrate are likely to occur during the processing. As a result, it becomes difficult to wire at a high density to one surface of the processed circuit board, and it becomes difficult to accurately form solder bumps. Therefore, it is important to strictly match the coefficients of thermal expansion of the processed substrate and the glass substrate.

Conventionally, the coefficient of thermal expansion of a glass substrate is matched with the coefficient of thermal expansion of a processed substrate by adjusting the glass composition of the glass substrate.

However, even if the glass composition of the glass substrate is adjusted, the coefficient of thermal expansion of the glass substrate may deviate from the target value due to changes in the melting conditions and molding conditions of the glass substrate. In this case, the glass substrate is discarded or the glass substrate is remelted to change the coefficient of thermal expansion of the glass substrate, and as a result, the manufacturing cost of the glass substrate rises.

The present invention has been made in view of the above circumstances, and a technical problem thereof is to devise a method capable of readjusting the coefficient of thermal expansion of the supported glass substrate after molding to a target value by a simple method. ..

As a result of repeating various experiments, the present inventor has found that the above technical problem can be solved by performing a heat treatment on a glass substrate after molding, and proposes it as the present invention. That is, the method for manufacturing a support glass substrate of the present invention is a method for manufacturing a support glass substrate for supporting a processed substrate, in which a molding step for molding the support glass substrate and a heat treatment for the support glass substrate after molding are performed to support the support glass substrate. It is characterized by comprising a heat treatment step of varying the thermal expansion coefficient of the glass substrate.

In the method for manufacturing a support glass substrate of the present invention, even if the coefficient of thermal expansion of the support glass substrate deviates from the target theory, the coefficient of thermal expansion of the support glass substrate can be changed to the target value by heat treatment. This eliminates the need for disposal and remelting of the support glass substrate, and can reduce the manufacturing cost of the support glass substrate.

Secondly, in the method for manufacturing a support glass substrate of the present invention, it is preferable to heat-treat the support glass substrate after the molding step to reduce the coefficient of thermal expansion of the support glass substrate.

Thirdly, in the method for manufacturing a support glass substrate of the present invention, it is preferable that the maximum temperature of the heat treatment is higher than (strain point of the support glass substrate −100) ° C.

Fourth, in the method for manufacturing a supporting glass substrate of the present invention, it is preferable to lower the heat treatment temperature at a rate of 5 ° C./min or less after reaching the maximum temperature of the heat treatment.

Fifth, in the method for manufacturing a supporting glass substrate of the present invention, it is preferable to reduce the amount of warpage of the supporting glass substrate to 40 μm or less by heat treatment. Here, the "warp amount" is the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supported crystallized glass substrate and the absolute value of the lowest point and the least squares focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd.

Sixth, in the method for manufacturing a support glass substrate of the present invention, a heat treatment setter larger than the size of the support glass substrate is prepared, the support glass substrate after molding is placed on the heat treatment setter, and then heat treatment is performed. It is preferable to use it in the process.

Seventh, in the method for manufacturing a support glass substrate of the present invention, it is preferable to mold the support glass substrate so that the plate thickness is 400 μm or more and less than 2 mm.

Eighth, in the method for manufacturing a supporting glass substrate of the present invention, it is preferable to form the supporting glass substrate by an overflow downdraw method.

Ninth, the method for manufacturing a support glass substrate of the present invention preferably includes a polishing step of polishing the surface of the support glass substrate after the heat treatment step to reduce the overall plate thickness deviation to less than 2.0 μm. Here, the "overall plate thickness deviation" is the difference between the maximum plate thickness and the minimum plate thickness of the entire supporting glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd.

Tenth, it is preferable that the method for manufacturing a supporting glass substrate of the present invention includes a cutting and removing step of cutting and removing the peripheral portion of the supporting glass substrate after the heat treatment step.

Eleventh, the method for manufacturing a semiconductor package of the present invention relates to a laminating step of producing a laminated body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a processed substrate of the laminated body. It is preferable that the support glass substrate is manufactured by the above-mentioned method for manufacturing a support glass substrate, and is provided with a processing process for performing the processing process.

Twelfth, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processed substrate includes at least a semiconductor chip molded with a sealing material.

Thirteenth, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing process includes a process of wiring to one surface of the processed substrate.

Fourteenth, in the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing process includes a process of forming solder bumps on one surface of the processed substrate.

It is a conceptual perspective view which shows an example of the laminated body which concerns on this invention. It is a conceptual cross-sectional view which shows the manufacturing process of a fan out type WLP.

Hereinafter, the method for manufacturing the supporting glass substrate of the present invention will be described in detail.

In the method for manufacturing a supporting glass substrate of the present invention, first, glass raw materials are mixed and mixed to prepare a glass batch, the glass batch is put into a glass melting furnace, and then the obtained molten glass is clarified and stirred. Therefore, it is preferable to supply the glass to a molding apparatus and mold it into a plate shape to obtain a support glass substrate.

The glass batch is preferably prepared to have a desired coefficient of thermal expansion. Specifically, when the proportion of semiconductor chips in the processed substrate is small and the proportion of encapsulant is large, a glass batch is prepared so as to have a highly expanding glass composition, and conversely, the semiconductor chips are prepared in the processed substrate. When the proportion of the glass is large and the proportion of the encapsulant is small, it is preferable to prepare the glass batch so as to have a glass composition having a low expansion.

When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C is restricted to 0 × 10 ^-7 / ° C or higher and ^{less than 50 × 10 -7} / ° C, the supporting glass substrate has a glass composition of% by mass. SiO ₂ 55-75%, Al ₂ O ₃ 15-30%, Li ₂ O 0.1-6%, Na ₂ O + K ₂ O ( _{total amount of Na 2} O and K ₂ O) 0-8%, MgO + CaO + SrO + BaO ( It is preferable to prepare the glass batch so as to contain 0 to 10% (total amount of MgO, CaO, SrO and BaO), SiO ₂ 55 to 75%, Al ₂ O ₃ 10 to 30%, Li ₂ O + Na ₂ O + K. _{It is also preferable to prepare a glass batch so as to contain 2} O ( _{total amount of Li 2} O, Na ₂ O and K ₂ O) 0 to 0.3%, MgO + CaO + SrO + BaO 5 to 20%, and SiO ₂ 55 to 68%. _{, Al 2 O 3 12~25%,} B 2 O 3 0~15%, it is also preferable to prepare the glass batch to contain 5~30% MgO + CaO + SrO + BaO. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C is restricted to 50 × 10 ^-7 / ° C or higher and ^{less than 70 × 10 -7} / ° C, the supporting glass substrate has a glass composition of% by mass. SiO ₂ 55-75%, Al ₂ O ₃ 3-15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO _{0~5%, Na 2 O 5~15%} , preferably be prepared glass batch to contain _{K 2 O 0~10%, SiO 2} 64~71%, Al 2 O 3 5~10%, B ₂ O ₃ 8 to 15%, MgO 0 to 5%, CaO 0 to 6%, SrO 0 to 3%, BaO 0 to 3%, ZnO 0 to 3%, Na ₂ O 5 to 15%, K ₂ O It is more preferred to prepare the glass batch to contain 0-5%. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C is restricted to 70 × 10 ^-7 / ° C or higher and 85 × 10 ^-7 / ° C or lower, the supporting glass substrate has a glass composition of% by mass. SiO ₂ 60-75%, Al ₂ O ₃ 5-15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO _{0~5%, Na 2 O 7~16%} , preferably be prepared glass batch to contain _{K 2 O 0~8%, SiO 2} 60~68%, Al 2 O 3 5~15%, B ₂ O ₃ 5 to 20%, MgO 0 to 5%, CaO 0 to 10%, SrO 0 to 3%, BaO 0 to 3%, ZnO 0 to 3%, Na ₂ O 8 to 16%, K ₂ O It is more preferred to prepare the glass batch to contain 0-3%. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° ^{C is restricted to more than 85 × 10 -7} / ° C and 120 × 10 ^-7 / ° C or less, the supporting glass substrate has a glass composition of% by mass. _{SiO 2 45~70% (55~70%)} , Al 2 O 3 3~25% ( preferably _{3~13%), B 2 O 3} 0~8% ( preferably _{2~8%), P} 2 O _{5 0~20%, 0~5% MgO,} CaO 0~10%, SrO 0~5%, BaO 0~5%, 0~5% ZnO, Na 2 O 10~21%, K 2 O 0~5 It is preferable to prepare the glass batch so as to contain%. When the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° ^{C is restricted to more than 120 × 10 -7} / ° C and 165 × 10 ^-7 / ° C or less, the supporting glass substrate has a glass composition of% by mass. SiO ₂ 53 to 65%, Al ₂ O _{3 3 to} 13%, B ₂ O _{30 to} 5%, MgO 0.1 to 6%, CaO 0 to 10%, SrO 0 to 5%, BaO 0 to 5% , ZnO 0-5%, Na ₂ O + K ₂ O 20-40%, Na ₂ O 12-21%, K ₂ O 7-21%. By doing so, it becomes easy to adjust the coefficient of thermal expansion to the target value, and the devitrification resistance is improved, so that it becomes easy to form a support glass substrate having a small deviation in the overall plate thickness. The "average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C." refers to a value measured by a dilatometer.

One selected from the group _{of As 2} O ₃ , Sb ₂ O ₃ , CeO ₂ , SnO ₂ , F, Cl, SO ₃ (preferably the group of SnO ₂ , Cl, SO ₃ ) as a clarifying agent in a glass batch. Alternatively, two or more kinds may be added in an amount of 0.05 to 2% by mass. The _{total amount of SnO 2} , SO ₃ and Cl is preferably 0 to 1% by mass, 100 to 3000 ppm (0.01 to 0.3% by mass), 300 to 2500 ppm, and particularly 500 to 2500 ppm. If the _{total amount of SnO 2} , SO ₃ and Cl is less than 100 ppm, it becomes difficult to enjoy the clarification effect.

From an environmental point of view, _{it is preferable to refrain from using As 2} O ₃ , Sb ₂ O ₃ and F as much as possible, and it is preferable that they are not substantially contained. Here, "substantially free of ..." specifically means that the content of the specified component is less than 500 ppm (mass). From an environmental point of view, it is also preferable that _{PbO and Bi 2} O _{3 are not substantially contained in the glass composition.}

In the method for manufacturing a supporting glass substrate of the present invention, it is preferable to prepare a glass batch so that the Young's modulus of the supporting glass substrate is 60 GPa or more (preferably 65 GPa or more, 70 GPa or more, particularly 75 to 130 GPa). When the proportion of the semiconductor chip is small and the proportion of the encapsulant is large in the processed substrate, the rigidity of the entire laminated body is lowered, and the processed substrate is easily warped in the processing process. Therefore, if the Young's modulus of the support glass substrate is increased, it becomes easy to suppress the warp deformation of the processed substrate, and the processed substrate can be firmly and accurately supported. Here, "Young's modulus" refers to a value measured by the bending resonance method.

The liquidus temperature of the supporting glass substrate is less than 1150 ° C (preferably 1120 ° C or less, 1100 ° C or less, 1080 ° C or less, 1050 ° C or less, 1010 ° C or less, 980 ° C or less, 960 ° C or less, 950 ° C or less, especially 940 ° C or less. ), It is preferable to prepare a glass batch. The liquidus viscosity of the supporting glass substrate is 10 ^4.8 dPa · s or more (preferably 10 ^5.0 dPa · s or more, 10 ^5.2 dPa · s or more, 10 ^5.4 dPa · s or more, especially 10 ⁵ It is preferable to prepare a glass batch so as to have a value of ^{6.6 dPa · s or more).} By doing so, it becomes easy to form the support glass substrate by the down draw method, particularly the overflow down draw method, so that it becomes easy to manufacture the support glass substrate having a small plate thickness, and the whole plate does not need to be polished. The thickness deviation can be reduced. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the supporting glass substrate can be reduced. The "liquid phase temperature" is determined by passing the standard sieve 30 mesh (500 μm), putting the glass powder remaining in 50 mesh (300 μm) into a platinum boat, and then holding it in a temperature gradient furnace for 24 hours to form crystals. It can be calculated by measuring the precipitation temperature. The "liquid phase viscosity" can be measured by the platinum ball pulling method.

In the method for manufacturing a support glass substrate of the present invention, it is preferable to mold the support glass substrate so that the plate thickness is 400 μm or more and less than 2 mm. The plate thickness of the support glass substrate is preferably 400 μm or more, 500 μm or more, 600 μm or more, 700 μm or more, 800 μm or more, 900 μm or more, and particularly 1000 μm or more. If the plate thickness of the supporting glass substrate is too small, the mechanical strength is lowered and the supporting glass substrate is easily damaged in the manufacturing process of the semiconductor package. On the other hand, if the plate thickness of the support glass substrate is too large, the mass of the laminated body becomes large, and the handleability deteriorates. Further, in the semiconductor package manufacturing process, there is a possibility that the laminate cannot clear the height limitation in the semiconductor package manufacturing apparatus. Therefore, the plate thickness of the support glass substrate is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, and particularly 1.1 mm or less.

It is preferable to form the support glass substrate by the down draw method, particularly the overflow down draw method. In the overflow down draw method, molten glass is overflowed from both sides of a heat-resistant gutter-shaped structure, and the overflowed molten glass is merged at the lower apex end of the gutter-shaped structure to form a molded confluence surface inside the glass. , It is a method of stretching and molding downward. In the overflow down draw method, the surface that should be the glass surface does not come into contact with the gutter-shaped refractory and is formed in a free surface state. Therefore, it becomes easy to manufacture a support glass substrate having a small plate thickness, and the deviation in the overall plate thickness can be reduced without polishing the surface. Alternatively, a small amount of polishing can reduce the overall plate thickness deviation to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the supporting glass substrate can be reduced.

As a method for forming the support glass substrate, for example, a slot down method, a redraw method, a float method and the like can be adopted in addition to the overflow down draw method.

The method for manufacturing a support glass substrate of the present invention preferably includes a step of measuring the coefficient of thermal expansion of the support glass substrate after molding before the heat treatment step. By doing so, the coefficient of thermal expansion of the support glass substrate can be increased by controlling the heat treatment conditions (maximum temperature of heat treatment, rate of temperature decrease of heat treatment, etc.) in consideration of the measured value of the coefficient of thermal expansion of the support glass substrate. It becomes easy to adjust to the target value.

In the method for manufacturing a supporting glass substrate of the present invention, a cleaning step of the supporting glass substrate may be provided before the heat treatment step. As a result, even if foreign matter adheres to the support glass substrate, it is possible to prevent the adhered foreign matter from being seized on the surface of the support glass substrate by the heat treatment.

The method for manufacturing a support glass substrate of the present invention includes a heat treatment step of heat-treating the support glass substrate after molding to change the coefficient of thermal expansion of the support glass substrate. In that case, the support glass substrate after the molding step is heat-treated. Therefore, it is preferable to reduce the coefficient of thermal expansion of the supporting glass substrate. By doing so, it becomes easy to control the coefficient of thermal expansion of the supporting glass substrate to the target value. It is possible to increase the coefficient of thermal expansion of the support glass substrate by heat treatment, but in this case, the support glass substrate must be sufficiently slowly cooled at the time of molding and then subjected to the heat treatment step, and the support glass substrate must be subjected to the heat treatment step. The manufacturing efficiency of the glass tends to decrease.

In the heat treatment step, it is preferable to reduce the average coefficient of linear thermal expansion in the temperature range of 30 to 380 ° C. of the supporting glass substrate by 0.05 × 10 ^{-7 to} 3 × 10 ^-7 / ° C., preferably 0.1 × 10 ^-7 to. It is more preferable to lower the temperature by 3 × 10 ^-7 / ° C, further preferably to lower the temperature by ^{0.2 × 10 -7} to 1 × 10 ^{-7 / ° C, and it is more preferable to reduce the temperature by 0.3 × 10 -7 to} 0.8 × 10 ^−. It is particularly preferable to reduce the temperature by ^{7 / ° C.} The coefficient of thermal expansion of the supporting glass substrate fluctuates due to fluctuations in melting conditions, molding conditions, and the like. The fluctuation range is not so large, but these slight fluctuations become a problem in the application of the supporting glass substrate where the coefficient of thermal expansion needs to be adjusted strictly. Then, it is difficult to control the coefficient of thermal expansion to the target value by managing the melting conditions, molding conditions, and the like. Therefore, if the heat treatment conditions (maximum temperature of heat treatment, temperature decrease rate of heat treatment, etc.) are adjusted in the heat treatment process, the coefficient of thermal expansion of the supporting glass substrate is controlled to the target value without strictly controlling the melting conditions, molding conditions, etc. It becomes easier to do.

The method for manufacturing a support glass substrate of the present invention preferably includes a heat treatment step of heat-treating the support glass substrate after molding to change the density of the support glass substrate. In that case, the support glass substrate after the molding step is heat-treated. Therefore, it is preferable to increase the density of the support glass substrate. By doing so, when it is necessary to strictly adjust the density of the support glass substrate, it becomes easy to control the density of the support glass substrate to the target value. It is possible to reduce the density of the supporting glass substrate by heat treatment, but in this case, the supporting glass substrate must be sufficiently slowly cooled at the time of molding and then subjected to the heat treatment step, so that the supporting glass substrate must be manufactured. Efficiency tends to decrease.

The degree of increase in the density of the support glass substrate correlates with the degree of decrease in the coefficient of thermal expansion of the support glass substrate. Therefore, by measuring the increase value of the density of the support glass substrate, the decrease value of the thermal expansion coefficient of the support glass substrate can be easily estimated. In the heat treatment step, it is preferable to the density of the supporting glass substrate 0.001-0.05 grams / cm ³ is raised, more preferably be 0.004~0.03g / cm ³ is raised, 0.007～0.015G it is particularly preferred to / cm ³ is raised. When the increase value of the density is out of the above range, it becomes difficult to estimate the decrease value of the coefficient of thermal expansion of the supporting glass substrate.

The maximum temperature of the heat treatment is preferably (strain point of the support glass substrate -100) ° C or higher, (strain point of the support glass substrate -50) ° C or higher, (strain point of the support glass substrate -30) ° C or higher, and the support glass substrate. (Strain point of support glass substrate +10) ° C or higher, (distortion point of support glass substrate +20) ° C or higher, (distortion point of support glass substrate +30) ° C or higher, especially (distortion point of support glass substrate +50) ) ℃ or higher. If the maximum temperature of the heat treatment is too low, the heat treatment time for varying the coefficient of thermal expansion of the supporting glass substrate becomes unreasonably long, and the heat treatment efficiency tends to decrease. Further, it becomes difficult to reduce the coefficient of thermal expansion of the supporting glass substrate by the heat treatment. On the other hand, if the maximum temperature of the heat treatment is too high, the supporting glass substrate is likely to be thermally deformed. Therefore, the maximum temperature of the heat treatment is preferably (distortion point of the supporting glass substrate +150) ° C. or lower, and (distortion point of the supporting glass substrate +120) ° C. or less.

In the heat treatment step, it is necessary to lower the temperature from the maximum temperature of the heat treatment in order to safely take out the support glass substrate from the heat treatment furnace. The temperature lowering rate is preferably 5 ° C./min or less, 4 ° C./min or less, 3 ° C./min or less, 2 ° C./min or less, 1 ° C./min or less, and particularly 0.8 ° C./min or less. If the temperature lowering rate is too fast, thermal strain tends to remain on the support glass substrate after the heat treatment step, and the support glass substrate may be damaged when the support glass substrate is taken out from the heat treatment furnace. On the other hand, if the temperature lowering rate is too slow, the heat treatment time for varying the coefficient of thermal expansion of the supporting glass substrate becomes unreasonably long, and the heat treatment efficiency tends to decrease. Therefore, the temperature lowering rate is preferably 0.01 ° C./min or more, 0.05 ° C./min or more, 0.1 ° C./min or more, 0.2 ° C./min or more, and particularly 0.5 ° C./min or more. ..

It is preferable to prepare a heat treatment setter having a size larger than the size of the support glass substrate, place the molded support glass substrate on the heat treatment setter, and then perform the heat treatment step. By doing so, it is possible to reduce the temperature unevenness of the supporting glass substrate during the heat treatment. When the size of the heat treatment setter is equal to or smaller than the size of the support glass substrate, a part of the support glass substrate is likely to protrude from the heat treatment setter, and the protruding portion is likely to be thermally deformed.

In the method for manufacturing a support glass substrate of the present invention, it is preferable to reduce the amount of warpage of the support glass substrate to 40 μm or less by heat treatment. Then, in order to reduce the amount of warpage of the support glass substrate, it is preferable to arrange the heat-resistant substrate above the support glass substrate and perform the heat treatment while sandwiching the support glass substrate between the heat treatment setter and the heat-resistant substrate. As the heat-resistant substrate, a mullite substrate, an alumina substrate, or the like can be used. Further, it is preferable to perform the heat treatment in a state where a plurality of supporting glass substrates are laminated. As a result, the amount of warpage of the support glass substrate laminated below the stack is appropriately reduced by the mass of the support glass substrate laminated above. Further, the heat treatment efficiency of the support glass substrate can be improved.

The method for manufacturing a support glass substrate of the present invention preferably includes a polishing step of polishing the surface of the support glass substrate after the heat treatment step to reduce the overall plate thickness deviation to less than 2.0 μm. Various methods can be adopted as the polishing treatment method, but the support glass substrate is polished by sandwiching both sides of the support glass substrate with a pair of polishing pads and rotating the support glass substrate and the pair of polishing pads together. The method of processing is preferred. Further, it is preferable that the pair of polishing pads have different outer diameters, and it is preferable to perform polishing treatment so that a part of the supporting glass substrate intermittently protrudes from the polishing pads during polishing. This makes it easier to reduce the deviation in the overall plate thickness and also makes it easier to reduce the amount of warpage. In the polishing treatment, the polishing depth is not particularly limited, but the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, and particularly 10 μm or less. The smaller the polishing depth, the higher the productivity of the supporting glass substrate.

It is preferable to polish the surface of the support glass substrate so that the total thickness deviation of the support glass substrate is less than 2.0 μm, 1 μm or less, particularly 0.1 to 1 μm, and the arithmetic average roughness of the surface of the support glass substrate is rough. It is preferable to polish the surface of the supporting glass substrate so that Ra is 5 nm or less, 2 nm or less, 1.5 nm or less, 1 nm or less, 0.8 nm or less, and particularly 0.5 nm or less. The smaller the deviation in the overall plate thickness or the higher the surface accuracy, the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be improved, high-density wiring becomes possible. In addition, the strength of the support glass substrate is improved, and the support glass substrate and the laminate are less likely to be damaged. The "arithmetic mean roughness Ra" can be measured by an atomic force microscope (AFM).

The method for manufacturing a supporting glass substrate of the present invention preferably includes a cutting and removing step of cutting and removing the peripheral portion of the supporting glass substrate after the heat treatment step, and cutting and removing the peripheral portion of the supporting glass substrate after the polishing step. It is more preferable to have a process. In the heat treatment step, the amount of warpage tends to be larger in the peripheral portion than in the central portion of the support glass substrate. Therefore, if the peripheral portion of the support glass substrate is cut and removed after the heat treatment step, the amount of warpage of the support glass substrate can be reduced.

When cutting and removing the peripheral portion of the support glass substrate, it is preferable to cut out the rectangular support glass substrate into a substantially disk shape or a wafer shape. By doing so, it becomes easy to apply to the manufacturing process of the semiconductor package. If necessary, it may be processed into another shape, for example, a shape such as a rectangle. The roundness of the cut-out support glass substrate (excluding the notch portion) is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the manufacturing process of semiconductor packages. The definition of roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.

The method for manufacturing a support glass substrate of the present invention preferably includes a notch processing step of forming a notch portion (alignment portion) on a part of the outer periphery of the support glass substrate after the cutting and removing step. As a result, a positioning member such as a positioning pin is brought into contact with the notch portion of the support glass substrate, and the position of the support glass substrate can be easily fixed. As a result, the alignment between the processed substrate and the supporting glass substrate becomes easy. If a notch portion is also formed on the processed substrate and the positioning member is brought into contact with the processed substrate, the alignment between the processed substrate and the supporting glass substrate becomes easier.

The method for manufacturing a support glass substrate of the present invention preferably includes a chamfering step of chamfering the end face (including the end face of the notch portion) of the support glass substrate after the cutting and removing step. This makes it possible to prevent glass powder and the like from being generated from the end face. For the chamfering process, a chamfering process using a grooved grindstone, a chamfering process by acid etching such as hydrofluoric acid, or the like can be adopted.

In the method for manufacturing a support glass substrate of the present invention, it is preferable not to perform an ion exchange treatment on the support glass substrate. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate rises, and it becomes difficult to reduce the deviation in the overall thickness of the supporting glass substrate.

The method for manufacturing a semiconductor package of the present invention includes a laminating step of producing a laminated body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a process of processing the processed substrate of the laminated body. It is characterized by comprising a processing step and the support glass substrate being manufactured by the above-mentioned method for manufacturing a support glass substrate. In the method for manufacturing a semiconductor package of the present invention, the technical features of the method for manufacturing a support glass substrate of the present invention have already been described, and therefore detailed description of the portion thereof will be omitted.

In the method for manufacturing a semiconductor package of the present invention, it is preferable to provide an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, and for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like is preferable. Further, those having heat resistance to withstand heat treatment in the manufacturing process of the semiconductor package are preferable. As a result, the adhesive layer is less likely to melt in the manufacturing process of the semiconductor package, and the accuracy of the processing can be improved. In addition, in order to easily fix the processed substrate and the supporting glass substrate, an ultraviolet curable tape can also be used as an adhesive layer.

Further, it is preferable to provide a release layer between the processed substrate and the supporting glass substrate, more specifically, between the processed substrate and the adhesive layer. By doing so, it becomes easy to peel off the processed substrate from the supporting glass substrate after performing a predetermined processing treatment on the processed substrate. From the viewpoint of productivity, it is preferable to peel off the processed substrate by irradiation light such as laser light. As the laser light source, an infrared light laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. Further, a resin that decomposes by irradiating the peeling layer with an infrared laser can be used. In addition, a substance that efficiently absorbs infrared rays and converts them into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dye, pigment and the like can be added to the resin.

The peeling layer is made of a material in which "intra-layer peeling" or "interfacial peeling" occurs due to irradiation light such as laser light. That is, when irradiated with light of a certain intensity, the interatomic or intermolecular bonding force in the atom or molecule disappears or decreases, ablation or the like occurs, and the material is composed of a material that causes peeling. In addition, there are cases where the components contained in the peeling layer are released as a gas and lead to separation by irradiation with irradiation light, and cases where the peeling layer absorbs light and becomes a gas and the vapor is released and leads to separation. There is.

In the method for manufacturing a semiconductor package of the present invention, it is preferable that the size of the processed substrate is larger than the size of the supporting glass substrate. As a result, when the processed substrate and the support glass substrate are laminated, even if the center positions of the two are slightly separated from each other, the edge portion of the processed substrate is less likely to protrude from the support glass substrate.

It is preferable that the method for manufacturing a semiconductor package of the present invention further includes a transport step for transporting the laminate. This makes it possible to increase the processing efficiency of the processing process. The "transport process" and the "processing process" do not necessarily have to be performed separately, and may be performed at the same time.

In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a process of wiring on one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, the dimensions of the processed substrate are unlikely to change during these processes, so that these steps can be appropriately performed.

In addition to the above, the processing includes processing to mechanically polish one surface of the processed substrate (usually the surface opposite to the supporting glass substrate), and processing to mechanically polish one surface of the processed substrate (usually what is the supporting glass substrate). It may be either a process of dry etching the surface on the opposite side or a process of wet etching one surface of the processed substrate (usually the surface on the opposite side of the supporting glass substrate). In the method for manufacturing a semiconductor package of the present invention, the processed circuit board is less likely to warp and the rigidity of the laminated body can be maintained. As a result, the above processing can be properly performed.

The present invention will be further described with reference to the drawings.

FIG. 1 is a conceptual perspective view showing an example of the laminated body 1 according to the present invention. In FIG. 1, the laminated body 1 includes a support glass substrate 10 and a processed substrate 11. The support glass substrate 10 is attached to the processed substrate 11 in order to prevent the dimensional change of the processed substrate 11. A release layer 12 and an adhesive layer 13 are arranged between the support glass substrate 10 and the processed substrate 11. The release layer 12 is in contact with the support glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

As can be seen from FIG. 1, the laminated body 1 is laminated and arranged in the order of the support glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11. The shape of the support glass substrate 10 is determined according to the processed substrate 11, but in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk-shaped. For the release layer 12, for example, a resin that decomposes by irradiating with a laser can be used. In addition, a substance that efficiently absorbs laser light and converts it into heat can be added to the resin. For example, carbon black, graphite powder, fine particle metal powder, dyes, pigments and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin and is formed by coating, for example, by various printing methods, an inkjet method, a spin coating method, a roll coating method, or the like. In addition, UV curable tape can also be used. The adhesive layer 13 is dissolved and removed by a solvent or the like after the support glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed by a peeling tape after being irradiated with ultraviolet rays.

FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are attached onto the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with the resin encapsulant 23. As the sealing material 23, a material having little dimensional change after compression molding and dimensional change when molding wiring is used. Subsequently, as shown in FIGS. 2 (d) and 2 (e), the processed substrate 24 on which the semiconductor chip 22 is molded is separated from the support member 20, and then bonded and fixed to the support glass substrate 26 via the adhesive layer 25. Let me. At that time, among the surfaces of the processed substrate 24, the surface opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the support glass substrate 26 side. In this way, the laminated body 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the support glass substrate 26. Further, after the obtained laminated body 27 is conveyed, as shown in FIG. 2 (f), a wiring 28 is formed on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, and then a plurality of solder bumps 29 are formed. To form. Finally, after separating the processed substrate 24 from the support glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging step. Further, the support glass substrate 26 is subjected to acid treatment with HCl or the like and then reused (FIG. 2 (g)).

Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited to the following examples.

Tables 1 and 2 show Examples (Sample Nos. 1 to 7, 9 to 22) and Comparative Examples (Sample No. 8) of the present invention.

As follows, the sample No. 1 to 7 were prepared. First, as the glass composition, in _{terms of mass%, SiO 2} 65.6%, Al ₂ O ₃ 8.0%, B ₂ O ₃ 9.1%, Na ₂ O 12.8%, CaO 3.2%, ZnO. The glass raw materials were prepared and mixed so as to contain 0.9%, SnO ₂ 0.3%, and Sb ₂ O ₃ 0.1%, and after obtaining a glass batch, the glass was supplied to a glass melting furnace at 1550 ° C. Then, the obtained molten glass was clarified and stirred, and then supplied to a molding apparatus of an overflow down draw method to form a plate having a thickness of 0.7 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 519 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.). In addition, sample No. Reference numeral 8 shows a glass substrate after molding that has not been subjected to the above heat treatment.

Further, the density of the heat-treated glass substrate was measured by the Archimedes method.

As is clear from Table 1, the sample No. In 1 to 7, a decrease in the coefficient of thermal expansion was observed by the predetermined heat treatment. By using these data and appropriately adjusting the heat treatment conditions, it is possible to change the coefficient of thermal expansion of the molded glass substrate to the target value. Furthermore, the sample No. In 1 to 7, an increase in density was observed by the predetermined heat treatment. Therefore, by appropriately adjusting the heat treatment conditions, it is possible to change the density of the glass substrate after molding to the target value.

As follows, the sample No. 9 and 10 were prepared. First, as a glass composition, in _{mass%, SiO 2 61.7%, Al} 2 O 3 18.0%, B 2 O 3 0.5%, Na 2 O 14.5%, K 2 O 2.0% , MgO 3.0%, SnO ₂ 0.3%, glass raw materials were prepared and mixed to obtain a glass batch, which was supplied to a glass melting furnace and melted at 1600 ° C., and then obtained. The molten glass was clarified and stirred, and then supplied to a molding apparatus of the overflow down draw method, and molded so that the plate thickness became 1.1 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 567 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In Nos. 9 and 10, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 11 and 12 were produced. First, in terms of mass%, SiO ₂ 56.2%, Al ₂ O ₃ 13.0%, B ₂ O ₃ 2.0%, Na ₂ O 14.5%, K ₂ O 4.9%, MgO 2. The glass raw materials are prepared and mixed so as to contain 0%, CaO 2.0%, ZrO ₂ 4.0% SnO ₂ 0.35%, Sb ₂ O ₃ 0.05%, and CeO _{2 1.0%.} After obtaining a glass batch, it is supplied to a glass melting furnace and melted at 1600 ° C., and then the obtained molten glass is clarified and stirred, and then supplied to a molding apparatus of an overflow down draw method to have a plate thickness of 1. It was molded to be .1 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 558 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In Nos. 11 and 12, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 13 and 14 were produced. First, in terms of mass%, SiO ₂ 60.4%, Al ₂ O ₃ 10.7%, Na ₂ O 15.5%, K ₂ O 8.8%, MgO 1.7%, CaO 2.6%, The _{glass raw materials were prepared and mixed so as to contain Sb 2} O ₃ 0.3%, and after obtaining a glass batch, the glass was supplied to a glass melting furnace and melted at 1400 ° C., and then the obtained molten glass was clarified. After stirring, the glass was supplied to a molding apparatus of the overflow down draw method and molded so that the plate thickness was 1.1 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 452 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In 13 and 14, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 15 and 16 were produced. First, in terms of mass%, SiO ₂ 60.4%, Al ₂ O ₃ 8.7%, Na ₂ O 13.6%, K ₂ O 12.7%, MgO 1.6%, CaO 2.5%, The _{glass raw materials were prepared and mixed so as to contain Sb 2} O ₃ 0.2% and SnO ₂ 0.3%, and after obtaining a glass batch, the glass was supplied to a glass melting furnace and melted at 1350 ° C., and then melted at 1350 ° C. The obtained molten glass was clarified and stirred, and then supplied to a molding apparatus of the overflow down draw method, and molded so that the plate thickness became 1.1 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 445 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In 15 and 16, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 17 and 18 were produced. First, in _{mass%, SiO 2 66.1%, Al} 2 O 3 8.5%, B 2 O 3 12.4%, Na 2 O 8.4%, CaO 3.3%, ZnO 1.0% , SnO ₂ 0.3% was prepared and mixed with the glass raw materials to obtain a glass batch, which was supplied to a glass melting furnace and melted at 1500 ° C., and then the obtained molten glass was clarified. After stirring, it was supplied to a molding apparatus of the overflow down draw method and molded so that the plate thickness became 1.1 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 532 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In 17 and 18, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 19, 20 were made. First, in terms of mass%, SiO ₂ 58.1%, Al ₂ O ₃ 13.0%, Li ₂ O 0.1%, Na ₂ O 14.5%, K ₂ O 5.5%, MgO 2.0. The glass raw materials were prepared and mixed so as to contain%, CaO 2.0%, ZrO ₂ 4.5%, and SnO ₂ 0.3%, and after obtaining a glass batch, the glass was supplied to a glass melting furnace for 1500. It was melted at ° C., and then the obtained molten glass was clarified and stirred, and then supplied to a molding device of an overflow down draw method to form a plate having a thickness of 0.7 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 517 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In 19 and 20, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As follows, the sample No. 21 and 22 were produced. First, in terms of mass%, SiO ₂ 47.5%, Al ₂ O ₃ 23.0%, P ₂ O ₅ 13.1%, Na ₂ O 14.7%, MgO 1.5%, SnO ₂ 0.2. The glass raw materials were prepared and mixed so as to contain%, and after obtaining a glass batch, the glass was supplied to a glass melting furnace and melted at 1500 ° C., and then the obtained molten glass was clarified and stirred, and then overflowed. It was supplied to a downdraw method molding apparatus and molded so that the plate thickness was 0.7 mm. Then, the obtained glass substrate was cut into a rectangular shape. The strain point of the obtained glass substrate was measured by the method described in ASTM C336 and found to be 595 ° C.

Subsequently, a heat treatment setter larger than the size of the glass substrate is prepared, the molded glass substrate is placed on the heat treatment setter, and the heat resistant substrate is placed on the glass substrate. Was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature shown in the table, and the temperature inside the electric furnace was kept at the maximum temperature for the time described in the table, and then the temperature inside the electric furnace was lowered at the temperature lowering rate described in the table.

For the glass substrate after the heat treatment, the average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C. and the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. were measured with a dilatometer (DIL402C manufactured by Netch Japan Co., Ltd.).

As is clear from Table 2, the sample No. In 21 and 22, the coefficient of thermal expansion of the glass substrate can be changed to the target value by appropriately adjusting the heat treatment conditions.

As can be seen from Tables 1 and 2, the coefficient of thermal expansion of the glass substrate having various glass compositions can be changed to the target value by appropriately adjusting the heat treatment conditions.

Further, various glass substrates (Sample Nos. 1 to 7, 9 to 22: Overall plate thickness deviation of about 4.0 μm) after the heat treatment were hollowed out to φ300 mm, and then both surfaces of the glass substrate were polished by a polishing device. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, it was occasionally controlled so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used during the polishing process was 2.5 μm, and the polishing rate was 15 m / min. For each of the obtained polished glass substrates, the total plate thickness deviation and the amount of warpage were measured by the Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken Co., Ltd. As a result, the total plate thickness deviation was less than 1.0 μm, and the warpage amount was 35 μm or less.

1,27 Laminated body 10, 26 Supporting glass substrate 11, 24 Processed substrate 12 Peeling layer 13, 21, 25 Adhesive layer 20 Supporting member 22 Semiconductor chip 23 Encapsulant 28 Wiring 29 Solder bump

Claims (13)

In the method of manufacturing a support glass substrate for supporting a processed substrate,
A molding process for molding the support glass substrate and a heat treatment step for heat-treating the support glass substrate after molding to fluctuate the coefficient of thermal expansion of the support glass substrate and reduce the amount of warpage of the support glass substrate to 40 μm or less. Prepare ,
A heat treatment setter that is larger than the size of the support glass substrate is prepared, and the heat treatment setter is placed on the heat treatment setter after molding, and the heat treatment substrate is placed above the support glass substrate. A method for manufacturing a support glass substrate, which comprises sandwiching the support glass substrate between the heat-resistant substrate and subjecting the support glass substrate to a heat treatment step. The method for manufacturing a support glass substrate according to claim 1, wherein the support glass substrate after the molding step is heat-treated to reduce the coefficient of thermal expansion of the support glass substrate. The method for manufacturing a supporting glass substrate according to claim 1 or 2, wherein the maximum temperature of the heat treatment is made higher than (distortion point -100 of the supporting glass substrate) ° C. The method for manufacturing a supporting glass substrate according to any one of claims 1 to 3, wherein the heat treatment temperature is lowered at a rate of 5 ° C./min or less after reaching the maximum temperature of the heat treatment. The method for manufacturing a support glass substrate according to any one of claims 1 to 4, wherein the amount of warpage of the support glass substrate is reduced to 35 μm or less by heat treatment. The method for manufacturing a support glass substrate according to any one of claims 1 to 5 , wherein the support glass substrate is molded so that the plate thickness is 400 μm or more and less than 2 mm. The method for manufacturing a support glass substrate according to any one of claims 1 to 6 , wherein the support glass substrate is formed by an overflow down draw method. The support glass substrate according to any one of claims 1 to 7 , further comprising a polishing step of polishing the surface of the support glass substrate after the heat treatment step to reduce the overall plate thickness deviation to less than 2.0 μm. Production method. The method for manufacturing a supporting glass substrate according to any one of claims 1 to 8 , further comprising a cutting and removing step of cutting and removing the peripheral portion of the supporting glass substrate after the heat treatment step. A laminating process for producing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate.
In addition to being provided with a processing process for performing processing on the processed substrate of the laminated body,
A method for manufacturing a semiconductor package, wherein the support glass substrate is manufactured by the method for manufacturing a support glass substrate according to any one of claims 1 to 9. The method for manufacturing a semiconductor package according to claim 10 , wherein the processed substrate includes at least a semiconductor chip molded with a sealing material. Processing method for forming a semiconductor package according to claim 10 or 11, characterized in that it comprises a process of wiring on one surface of the processed substrate. The method for manufacturing a semiconductor package according to any one of claims 10 to 12 , wherein the processing includes a process of forming solder bumps on one surface of the processed substrate.

Images