CN106653776A - 一种阵列基板及其制备方法和显示装置 - Google Patents

一种阵列基板及其制备方法和显示装置 Download PDF

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CN106653776A
CN106653776A CN201710042098.0A CN201710042098A CN106653776A CN 106653776 A CN106653776 A CN 106653776A CN 201710042098 A CN201710042098 A CN 201710042098A CN 106653776 A CN106653776 A CN 106653776A
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CN106653776B (zh
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曹可
姜涛
杨成绍
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板及其制备方法和显示装置。该阵列基板包括衬底和设置在衬底上的晶体管，晶体管包括栅极和有源层；栅极的面对有源层的一侧面上形成有光线吸收层，光线吸收层能对照射到其上的光线进行吸收。该阵列基板通过在栅极的面对有源层的一侧面上形成光线吸收层，能够将照射到其上的背光光线进行吸收，从而避免照射到有源层上的背光光线反射到栅极上之后，栅极将该部分光线再次反射到有源层，进而减少照射到有源层上的背光光线，以减少背光光线对晶体管的开关特性造成影响，最终确保晶体管的开关稳定性和采用该阵列基板的显示装置的显示效果和可信赖性。

Description

一种阵列基板及其制备方法和显示装置
技术领域
本发明涉及显示技术领域，具体地，涉及一种阵列基板及其制备方法和显示装置。
背景技术
由于曝光设备的昂贵，曝光环节一直是液晶显示屏制造中成本控制的重点。
为节省曝光成本，目前较多阵列基板的薄膜晶体管(TFT)制备工艺流程将有源层和源漏极用一次曝光做成，这种工艺方法节省了一道掩模(Mask)工艺，因此在节省生产节拍和曝光设备成本上有明显的优势。
但是，这种工艺会导致有源层相对位于其下方的栅极其图形伸出量过多，使得底部栅极无法完全遮挡背光源对有源层的照射，如图1所示，进入到有源层22的背光光线会造成薄膜晶体管(TFT)开关特性的改变，使之在工作中不稳定，影响液晶显示器的显示效果和可信赖性；于此同时，栅极21对从有源层22反射回来的背光光线会再次反射，背光光线重新回到有源层22，使得有源层22受到“二次照射”，这进一步增加了背光源光线对有源层22的不利影响。
发明内容
本发明针对现有技术中存在的上述技术问题，提供一种阵列基板及其制备方法和显示装置。该阵列基板通过在栅极面对有源层的一侧面上形成光线吸收层，能够将照射到其上的背光光线进行吸收，从而避免照射到有源层上的背光光线反射到栅极上之后，栅极将该部分光线再次反射到有源层，进而减少照射到有源层上的背光光线，以减少背光光线对晶体管的开关特性造成影响，最终确保晶体管的开关稳定性和采用该阵列基板的显示装置的显示效果和可信赖性。
本发明提供一种阵列基板，包括衬底和设置在所述衬底上的晶体管，所述晶体管包括栅极和有源层；所述栅极的面对所述有源层的一侧面上形成有光线吸收层，所述光线吸收层能对照射到其上的光线进行吸收。
优选地，所述栅极的材料包括铜；所述光线吸收层包括铜的氧化物的微晶粒和铜的硫化物的微晶粒；所述光线吸收层的表面呈凹凸不平状。
优选地，所述光线吸收层的颜色为黑色或黑灰色。
优选地，所述光线吸收层的厚度为10-30nm。
优选地，所述晶体管的源极和漏极同层设置，且分别位于所述有源层的同一侧的相对两端。
优选地，所述栅极设置于所述有源层的上方或下方。
本发明还提供一种显示装置，包括上述阵列基板。
本发明还提供一种如上述阵列基板的制备方法，包括采用构图工艺在衬底上分别形成包括栅极的图形和有源层的图形的步骤，在形成所述栅极的图形时，将所述栅极的图形上的光刻胶灰化完毕后，继续对所述栅极的图形进行灰化工艺，以在所述栅极的图形的面对所述有源层的一侧面上形成光线吸收层。
优选地，所述栅极的材料包括铜；对所述栅极的图形的灰化工艺包括：在干刻设备中采用六氟化硫气体和氧气产生的等离子体对所述栅极的图形区域进行刻蚀，以使所述栅极的图形区域的表层材料反应生成包括铜的氧化物的微晶粒和铜的硫化物的微晶粒。
优选地，还包括形成包括栅线的图形的步骤，所述栅线的图形和所述栅极的图形通过灰色调掩模工艺同时形成。
本发明的有益效果：本发明所提供的阵列基板，通过在栅极的面对有源层的一侧面上形成光线吸收层，能够将照射到其上的背光光线进行吸收，从而避免照射到有源层上的背光光线反射到栅极上之后，栅极将该部分光线再次反射到有源层，进而减少照射到有源层上的背光光线，以减少背光光线对晶体管的开关特性造成影响，最终确保晶体管的开关稳定性和采用该阵列基板的显示装置的显示效果和可信赖性。
本发明所提供的显示装置，通过采用上述阵列基板，提升了其显示稳定性，从而提升了其显示效果和可信赖性。
附图说明
图1为现有技术中薄膜晶体管的结构剖视图；
图2为本发明实施例1中阵列基板的结构剖视图；
图3为图2中光线吸收层对照射到其上的光线进行吸收的示意图；
图4为图2中阵列基板的制备方法中步骤S101的示意图；
图5为图2中阵列基板的制备方法中步骤S102的示意图；
图6为图2中阵列基板的制备方法中步骤S103的示意图；
图7为图2中阵列基板的制备方法中步骤S104的示意图；
图8为图2中阵列基板的制备方法中步骤S105的示意图；
图9为图2中阵列基板的制备方法中步骤S106的示意图。
其中的附图标记说明：
1.衬底；2.晶体管；21.栅极；22.有源层；23.光线吸收层；24.源极；25.漏极；26.栅极膜层；3.栅线；4.钝化层；5.像素电极；6.光刻胶；7.栅绝缘层；8.公共电极；9.公共电极线。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明所提供的一种阵列基板及其制备方法和显示装置作进一步详细描述。
实施例1：
本实施例提供一种阵列基板，如图2和图3所示，包括衬底1和设置在衬底1上的晶体管2，晶体管2包括栅极21和有源层22；栅极21面对有源层22的一侧面上形成有光线吸收层23，光线吸收层23能对照射到其上的光线进行吸收。光线吸收层23能对照射到其上的外界光线特别是背光光线进行吸收。
通过在栅极21的面对有源层22的一侧面上形成光线吸收层23，能够将照射到其上的背光光线进行吸收，从而避免照射到有源层22上的背光光线反射到栅极21上之后，栅极21将该部分光线再次反射到有源层22，进而减少照射到有源层22上的背光光线，以减少背光光线对晶体管2的开关特性造成影响，最终确保晶体管的开关稳定性和采用该阵列基板的显示装置的显示效果和可信赖性。
本实施例中，栅极21的材料包括铜。光线吸收层23包括铜的氧化物的微晶粒和铜的硫化物的微晶粒。光线吸收层23的表面呈凹凸不平状。光线吸收层23内部的微晶粒没有很好地结晶，所以使光线吸收层23表面存在很多凹凸不平的缺陷，这种结构的光线吸收层23对照射到其上的背光光线有很好的吸收作用，从而防止照射到其上的背光光线发生再次反射。
需要说明的是，本实施例中的光线吸收层23是对栅极21的面对有源层22一侧的表层材料进行灰化(即干法刻蚀)后所形成的。栅极21的材料不仅仅局限于铜，也可以采用其他的一些导电材料；相应地，光线吸收层23的材料也可以是栅极21的材料在干法刻蚀过程中形成的一些其他材料成分；只要确保使栅极21的面对有源层22一侧的表层材料干法刻蚀后能够形成很好的吸收背光光线的结构即可。
本实施例中，光线吸收层23的颜色为黑色或黑灰色。黑色或黑灰色能够进一步增强光线吸收层23对背光光线的吸收作用，提高光线吸收层23对背光光线的吸收效果。
本实施例中，栅极21设置于有源层22的下方。即本实施例中的晶体管2为底栅型晶体管2。
优选的，光线吸收层23的厚度为10-30nm。该厚度范围的光线吸收层23能够对照射到其上的背光光线进行比较彻底的吸收，从而避免照射到栅极21上的背光光线再次反射到有源层22。
本实施例中，阵列基板还包括栅线(图2和图3中未示出)，栅线与栅极21采用相同材料且同层设置；晶体管2的源极24和漏极25同层设置，且分别位于有源层22的同一侧的相对两端。其中，源极24、漏极25和有源层22采用一次曝光形成，相对于目前有源层22与源极24和漏极25分别采用一次曝光形成的制备方法节省了一道掩模工艺，但这样形成的有源层22相对于与其对应的栅极21图形伸出量过多，即有源层22的图形尺寸远大于栅极21的图形尺寸，这会使得位于靠近背光光线一侧的栅极21无法完全遮挡住背光光线对有源层22的照射，背光光线有一部分会直接照射到有源层22上，并从有源层22反射到栅极21上。栅极21的面对有源层22一侧的光线吸收层23的形成，能够很好地吸收这部分反射光线，避免这部分反射光线再次反射到有源层22上，从而避免反射的背光光线对晶体管2开关特性的进一步影响。
本实施例中，阵列基板还包括钝化层4和像素电极5，钝化层4设置于源极24和漏极25上，像素电极5设置于钝化层4上，且像素电极5通过开设在钝化层4中对应漏极25所在区域的过孔与漏极25连接。阵列基板还包括公共电极8、公共电极线9和栅绝缘层7，公共电极8位于公共电极线9的下方且二者相互连接，公共电极线9与栅线同层设置且相互绝缘，栅绝缘层7设置于栅极21和有源层22之间。
基于阵列基板的上述结构，本实施例还提供一种该阵列基板的制备方法，如图4-图9所示，包括采用构图工艺在衬底1上分别形成包括栅极21的图形和有源层的图形的步骤，在形成栅极21的图形时，将栅极21的图形上的光刻胶6灰化完毕后，继续对栅极21的图形进行灰化(即干法刻蚀)工艺，以在栅极21的图形的面对有源层的一侧面上形成光线吸收层23。
本实施例中，该阵列基板的制备方法还包括形成包括栅线3的图形的步骤，栅线3的图形和栅极21的图形通过灰色调掩模工艺同时形成。
本实施例中，形成栅极21的图形具体包括以下步骤：
步骤S101：在衬底1上沉积形成栅极膜层26，并在栅极膜层26上涂敷光刻胶6(如图4所示)。
其中，本实施例中的光刻胶6为正性光刻胶。
步骤S102：采用灰色调掩模板对光刻胶6进行曝光，将对应栅极的图形、栅线的图形和公共电极线的图形以外区域的光刻胶6进行完全曝光；将对应栅极的图形的光刻胶6进行部分曝光；将对应栅线的图形和公共电极线的图形的光刻胶6不曝光(如图5所示)。
步骤S103：对完成步骤S102的衬底1上的光刻胶6进行显影工艺，去除对应栅极的图形、栅线的图形和公共电极线的图形以外区域的光刻胶6；部分保留对应栅极的图形的光刻胶6；完全保留对应栅线的图形和公共电极线的图形的光刻胶6(如图6所示)。
步骤S104：采用湿法刻蚀工艺去除对应栅极21的图形、栅线3的图形和公共电极线9的图形以外区域的栅极膜层(如图7所示)。
步骤S105：对完成步骤S104的衬底1上的光刻胶6进行灰化工艺，去除对应栅极21的图形的光刻胶6；部分保留对应栅线3的图形和公共电极线9的图形的光刻胶6(如图8所示)。
步骤S106：对完成步骤S105的衬底1上的栅极21的图形上的光刻胶6继续进行灰化工艺，使栅极21的图形的表层材料形成光线吸收层23；同时，去除对应栅线3的图形和公共电极线9的图形上的光刻胶6(如图9所示)。
该步骤中，栅极21的材料包括铜。对栅极21的图形的灰化工艺包括：在干刻设备中采用六氟化硫气体和氧气产生的等离子体对栅极21的图形区域进行刻蚀，以使栅极21的图形区域的表层材料反应生成包括铜的氧化物的微晶粒和铜的硫化物的微晶粒。这些微晶粒无法很好地结晶，所以使栅极21的图形的表层最终形成凹凸不平的缺陷，同时，灰化后的栅极21的图形的表层材料呈黑色或黑灰色，该结构和颜色的光线吸收层23能够很好地对照射到其上的背光光线进行吸收，以避免照射到栅极21面对有源层一侧的背光光线再次反射到有源层上，从而减少照射到有源层上的背光光线，进而减少背光光线对晶体管开关特性的不良影响。
需要说明的是，该步骤中，对应栅线3的图形和公共电极线9的图形的光刻胶6可以是在对栅极21的图形灰化(即干法刻蚀)完毕的同时恰好去除完毕，也可以是在对栅极21的图形灰化完毕后再通过剥离工艺剥离掉。
另外，需要说明的是，步骤S105中的灰化工艺同样是在干刻设备中采用六氟化硫气体和氧气产生的等离子体对光刻胶6进行刻蚀，经刻蚀后的光刻胶6被去除。
该阵列基板的制备方法还包括采用构图工艺在形成有源层的图形的衬底1上依次形成源极、漏极、钝化层和像素电极的步骤，另外，该阵列基板的制备方法在形成栅极21的图形和栅线3的图形之前还包括采用构图工艺在衬底1形成公共电极的步骤；且阵列基板的制备方法在形成栅极21的图形和栅线3的图形之后还包括：采用构图工艺在形成栅极21和栅线3的衬底1上形成栅绝缘层的步骤。具体不再赘述。
实施例2：
本实施例提供一种阵列基板，与实施例1不同的是，栅极设置于有源层的上方。即本实施例中的晶体管为顶栅型晶体管。
设置在栅极的面对有源层一侧的光线吸收层同样能对照射到其上的背光光线进行吸收，从而避免照射到栅极的面对有源层一侧的背光光线再次反射到有源层上，进而减少照射到有源层上的背光光线，最终减少背光光线对晶体管开关特性的不良影响。
相应地，本实施例中阵列基板的制备方法与实施例1不同的是，首先采用构图工艺在衬底上形成有源层；然后形成栅极绝缘层，其次采用构图工艺在形成栅极绝缘层的衬底上形成光线吸收层和栅极的图形。
在形成栅极绝缘层的衬底上形成光线吸收层和栅极的图形的步骤具体包括：首先在形成栅极绝缘层的衬底上沉积一薄层栅极膜层材料，并在该膜层材料上涂敷光刻胶；然后通过曝光和显影将对应栅极的图形以外区域的光刻胶去除；接着采用灰化工艺对对应栅极的图形上的光刻胶进行灰化，光刻胶灰化完毕后继续对对应栅极的图形进行灰化(即干法刻蚀)，最终形成光线吸收层的图形。其中，对对应栅极的图形区域进行干法刻蚀的具体方法与实施例1中相同，这里不再赘述。之后，再采用构图工艺在形成光线吸收层的衬底上形成栅极和栅线的图形。形成栅极和栅线的图形采用传统的构图工艺，具体不再赘述。
本实施例中阵列基板的其他结构及其制备方法的其他步骤与实施例1中相同，此处不再赘述。
实施例1-2的有益效果：实施例1-2所提供的阵列基板，通过在栅极的面对有源层的一侧面上形成光线吸收层，能够将照射到其上的背光光线进行吸收，从而避免照射到有源层上的背光光线反射到栅极上之后，栅极将该部分光线再次反射到有源层，进而减少照射到有源层上的背光光线，以减少背光光线对晶体管的开关特性造成影响，最终确保晶体管的开关稳定性和采用该阵列基板的显示装置的显示效果和可信赖性。
实施例3：
本实施例提供一种显示装置，包括实施例1-2任意一个中的阵列基板。
通过采用实施例1-2任意一个中的阵列基板，提升了该显示装置的显示稳定性，从而提升了该显示装置的显示效果和可信赖性。
本发明所提供的显示装置可以为液晶面板、液晶电视、显示器、手机、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种阵列基板，包括衬底和设置在所述衬底上的晶体管，所述晶体管包括栅极和有源层；其特征在于，所述栅极的面对所述有源层的一侧面上形成有光线吸收层，所述光线吸收层能对照射到其上的光线进行吸收。
2.根据权利要求1所述的阵列基板，其特征在于，所述栅极的材料包括铜；所述光线吸收层包括铜的氧化物的微晶粒和铜的硫化物的微晶粒；所述光线吸收层的表面呈凹凸不平状。
3.根据权利要求1所述的阵列基板，其特征在于，所述光线吸收层的颜色为黑色或黑灰色。
4.根据权利要求2或3所述的阵列基板，其特征在于，所述光线吸收层的厚度为10-30nm。
5.根据权利要求2所述的阵列基板，其特征在于，所述晶体管的源极和漏极同层设置，且分别位于所述有源层的同一侧的相对两端。
6.根据权利要求2或3所述的阵列基板，其特征在于，所述栅极设置于所述有源层的上方或下方。
7.一种显示装置，其特征在于，包括权利要求1-6任意一项所述的阵列基板。
8.一种如权利要求1-6任意一项所述的阵列基板的制备方法，包括采用构图工艺在衬底上分别形成包括栅极的图形和有源层的图形的步骤，其特征在于，在形成所述栅极的图形时，将所述栅极的图形上的光刻胶灰化完毕后，继续对所述栅极的图形进行灰化工艺，以在所述栅极的图形的面对所述有源层的一侧面上形成光线吸收层。
9.根据权利要求8所述的阵列基板的制备方法，其特征在于，所述栅极的材料包括铜；对所述栅极的图形的灰化工艺包括：在干刻设备中采用六氟化硫气体和氧气产生的等离子体对所述栅极的图形区域进行刻蚀，以使所述栅极的图形区域的表层材料反应生成包括铜的氧化物的微晶粒和铜的硫化物的微晶粒。
10.根据权利要求8所述的阵列基板的制备方法，其特征在于，还包括形成包括栅线的图形的步骤，所述栅线的图形和所述栅极的图形通过灰色调掩模工艺同时形成。
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