CN106653550A - 用双峰工艺气体组合物进行等离子体蚀刻的方法和系统 - Google Patents
用双峰工艺气体组合物进行等离子体蚀刻的方法和系统 Download PDFInfo
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- CN106653550A CN106653550A CN201610719175.7A CN201610719175A CN106653550A CN 106653550 A CN106653550 A CN 106653550A CN 201610719175 A CN201610719175 A CN 201610719175A CN 106653550 A CN106653550 A CN 106653550A
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Classifications
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811515594.4A CN110010463B (zh) | 2015-11-04 | 2016-08-25 | 一种用于半导体器件制造的等离子体处理系统 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/932,265 US9691625B2 (en) | 2015-11-04 | 2015-11-04 | Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level |
US14/932,265 | 2015-11-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811515594.4A Division CN110010463B (zh) | 2015-11-04 | 2016-08-25 | 一种用于半导体器件制造的等离子体处理系统 |
Publications (2)
Publication Number | Publication Date |
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CN106653550A true CN106653550A (zh) | 2017-05-10 |
CN106653550B CN106653550B (zh) | 2019-01-08 |
Family
ID=58635195
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811515594.4A Active CN110010463B (zh) | 2015-11-04 | 2016-08-25 | 一种用于半导体器件制造的等离子体处理系统 |
CN201610719175.7A Active CN106653550B (zh) | 2015-11-04 | 2016-08-25 | 用双峰工艺气体组合物进行等离子体蚀刻的方法和系统 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811515594.4A Active CN110010463B (zh) | 2015-11-04 | 2016-08-25 | 一种用于半导体器件制造的等离子体处理系统 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9691625B2 (zh) |
JP (2) | JP6849339B2 (zh) |
KR (1) | KR20170054280A (zh) |
CN (2) | CN110010463B (zh) |
TW (1) | TW201727737A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112105754A (zh) * | 2018-05-17 | 2020-12-18 | 瑞士艾发科技 | 处理衬底的方法和真空沉积设备 |
CN117080062A (zh) * | 2023-10-13 | 2023-11-17 | 无锡邑文微电子科技股份有限公司 | 碗状刻蚀的方法 |
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US10256075B2 (en) * | 2016-01-22 | 2019-04-09 | Applied Materials, Inc. | Gas splitting by time average injection into different zones by fast gas valves |
US10009028B2 (en) * | 2016-09-30 | 2018-06-26 | Lam Research Corporation | Frequency and match tuning in one state and frequency tuning in the other state |
US10854428B2 (en) * | 2017-12-13 | 2020-12-01 | Applied Materials, Inc. | Spatial atomic layer deposition chamber with plasma pulsing to prevent charge damage |
US10593518B1 (en) * | 2019-02-08 | 2020-03-17 | Applied Materials, Inc. | Methods and apparatus for etching semiconductor structures |
JP2022140924A (ja) * | 2021-03-15 | 2022-09-29 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JPWO2022255472A1 (zh) | 2021-06-03 | 2022-12-08 | ||
JP7250895B2 (ja) * | 2021-06-22 | 2023-04-03 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
JP7257088B1 (ja) * | 2022-03-24 | 2023-04-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
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CN1672240A (zh) * | 2002-07-24 | 2005-09-21 | 优利讯美国有限公司 | 使用交替淀积和蚀刻以及脉冲等离子体对高纵横比soi结构进行没有切口的蚀刻 |
CN1883036A (zh) * | 2003-10-21 | 2006-12-20 | 优利讯美国有限公司 | 使用时分多路复用工序和rf偏压调制的高外观soi结构的无切口刻蚀 |
US20150034592A1 (en) * | 2013-07-30 | 2015-02-05 | Corporation For National Research Initiatives | Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials |
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-
2015
- 2015-11-04 US US14/932,265 patent/US9691625B2/en active Active
-
2016
- 2016-08-01 JP JP2016150938A patent/JP6849339B2/ja active Active
- 2016-08-25 CN CN201811515594.4A patent/CN110010463B/zh active Active
- 2016-08-25 CN CN201610719175.7A patent/CN106653550B/zh active Active
- 2016-10-31 TW TW105135196A patent/TW201727737A/zh unknown
- 2016-11-02 KR KR1020160144921A patent/KR20170054280A/ko not_active Application Discontinuation
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2017
- 2017-06-06 US US15/615,768 patent/US10177003B2/en active Active
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2021
- 2021-03-04 JP JP2021034064A patent/JP7122422B2/ja active Active
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CN1883036A (zh) * | 2003-10-21 | 2006-12-20 | 优利讯美国有限公司 | 使用时分多路复用工序和rf偏压调制的高外观soi结构的无切口刻蚀 |
US20150034592A1 (en) * | 2013-07-30 | 2015-02-05 | Corporation For National Research Initiatives | Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112105754A (zh) * | 2018-05-17 | 2020-12-18 | 瑞士艾发科技 | 处理衬底的方法和真空沉积设备 |
CN112105754B (zh) * | 2018-05-17 | 2023-05-16 | 瑞士艾发科技 | 处理衬底的方法和真空沉积设备 |
CN117080062A (zh) * | 2023-10-13 | 2023-11-17 | 无锡邑文微电子科技股份有限公司 | 碗状刻蚀的方法 |
CN117080062B (zh) * | 2023-10-13 | 2024-01-26 | 无锡邑文微电子科技股份有限公司 | 碗状刻蚀的方法 |
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JP2017112350A (ja) | 2017-06-22 |
US9691625B2 (en) | 2017-06-27 |
TW201727737A (zh) | 2017-08-01 |
CN110010463B (zh) | 2023-06-27 |
US20170125253A1 (en) | 2017-05-04 |
CN110010463A (zh) | 2019-07-12 |
JP7122422B2 (ja) | 2022-08-19 |
CN106653550B (zh) | 2019-01-08 |
US10177003B2 (en) | 2019-01-08 |
KR20170054280A (ko) | 2017-05-17 |
JP2021093548A (ja) | 2021-06-17 |
US20170271166A1 (en) | 2017-09-21 |
JP6849339B2 (ja) | 2021-03-24 |
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