JPH0570930B2 - - Google Patents

Info

Publication number
JPH0570930B2
JPH0570930B2 JP58194311A JP19431183A JPH0570930B2 JP H0570930 B2 JPH0570930 B2 JP H0570930B2 JP 58194311 A JP58194311 A JP 58194311A JP 19431183 A JP19431183 A JP 19431183A JP H0570930 B2 JPH0570930 B2 JP H0570930B2
Authority
JP
Japan
Prior art keywords
plasma
plasma processing
high frequency
frequency power
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58194311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6086831A (ja
Inventor
Tooru Ootsubo
Susumu Aiuchi
Takashi Kamimura
Minoru Noguchi
Teru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19431183A priority Critical patent/JPS6086831A/ja
Priority to KR1019840006435A priority patent/KR890004881B1/ko
Priority to DE8484112571T priority patent/DE3482076D1/de
Priority to US06/662,014 priority patent/US4808258A/en
Priority to EP84112571A priority patent/EP0140294B1/en
Publication of JPS6086831A publication Critical patent/JPS6086831A/ja
Publication of JPH0570930B2 publication Critical patent/JPH0570930B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP19431183A 1983-10-19 1983-10-19 プラズマ処理方法およびその装置 Granted JPS6086831A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP19431183A JPS6086831A (ja) 1983-10-19 1983-10-19 プラズマ処理方法およびその装置
KR1019840006435A KR890004881B1 (ko) 1983-10-19 1984-10-17 플라즈마 처리 방법 및 그 장치
DE8484112571T DE3482076D1 (de) 1983-10-19 1984-10-18 Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens.
US06/662,014 US4808258A (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same
EP84112571A EP0140294B1 (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19431183A JPS6086831A (ja) 1983-10-19 1983-10-19 プラズマ処理方法およびその装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6300525A Division JP2791287B2 (ja) 1994-12-05 1994-12-05 プラズマエッチング処理方法及びその装置

Publications (2)

Publication Number Publication Date
JPS6086831A JPS6086831A (ja) 1985-05-16
JPH0570930B2 true JPH0570930B2 (zh) 1993-10-06

Family

ID=16322492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19431183A Granted JPS6086831A (ja) 1983-10-19 1983-10-19 プラズマ処理方法およびその装置

Country Status (1)

Country Link
JP (1) JPS6086831A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2974512B2 (ja) * 1992-08-21 1999-11-10 日新電機株式会社 エッチング方法及び装置
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US6391147B2 (en) 1994-04-28 2002-05-21 Tokyo Electron Limited Plasma treatment method and apparatus
JP2006260857A (ja) * 2005-03-16 2006-09-28 Nagano Japan Radio Co プラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPH0454373A (ja) * 1990-06-22 1992-02-21 Jatco Corp 変速機の制御装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPH0454373A (ja) * 1990-06-22 1992-02-21 Jatco Corp 変速機の制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274099A (ja) * 2000-03-24 2001-10-05 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法

Also Published As

Publication number Publication date
JPS6086831A (ja) 1985-05-16

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