CN106601899B - 一种led显示屏模块的封装工艺 - Google Patents

一种led显示屏模块的封装工艺 Download PDF

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CN106601899B
CN106601899B CN201611182149.1A CN201611182149A CN106601899B CN 106601899 B CN106601899 B CN 106601899B CN 201611182149 A CN201611182149 A CN 201611182149A CN 106601899 B CN106601899 B CN 106601899B
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display module
conductive film
led display
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CN106601899A (zh
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涂波
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Shenzhen jjjda Creative Technology Limited
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明公开了一种LED显示屏模块的封装工艺，包括一下步骤：红蓝绿显示芯片按规律封在胶体表面；在红蓝绿显示芯片背面镀上第一层导电膜，并将多余的膜雕刻掉形成所需的导电线路，从而使得各芯片串联导通；在第一层导电膜上覆盖一层保护层，并将各芯片焊盘点保护层雕刻掉将焊盘裸露出来；在保护层上再镀上第二层导电膜，并将多余的膜雕刻掉形成所需的导电线路，将芯片与控制器形成导通；在第二层导电膜上覆上一层胶水，完成LED显示屏模块的封装。本发明的LED显示屏模块的封装工艺提高单位面积像素，增加显示效果，同时更加节约成本。

Description

一种LED显示屏模块的封装工艺
技术领域
本发明涉及LED显示屏的封装，具体涉及一种LED显示屏模块的封装工艺。
背景技术
目前市面上的LED显示屏，一般采用直插式封装工艺或者贴片封装工艺，这两种封装工艺因本身封装形式的局限，现有技术中由于显示屏必须使用支架，故只能一个红绿蓝的组合作为一个像素点，而支架的结构会造成每个像素点的间距大于2Mm，这样分辨率会相对较低，显示效果不够细腻。
发明内容
有鉴于此，本发明目的是提供一种无基板封装、拼接效率更高及显示效果更加细腻的LED显示屏模块的封装工艺。
为了解决上述技术问题，本发明的技术方案是：
一种LED显示屏模块的封装工艺，包括一下步骤：
1)红蓝绿显示芯片按规律封在胶体表面；
2)在红蓝绿显示芯片背面镀上第一层导电膜，并将多余的膜雕刻掉形成所需的导电线路，从而使得各芯片串联导通；
3)在第一层导电膜上覆盖一层保护层，并将各芯片焊盘(BOND PAD)点保护层雕刻掉将焊盘裸露出来；
4)在保护层上再镀上第二层导电膜，并将多余的膜雕刻掉形成所需的导电线路，将芯片与控制器形成导通；
5)在第二层导电膜上覆上一层胶水，完成LED显示屏模块的封装。
进一步的，所述步骤2)或4)中采用溅镀方式进行镀导电膜。
进一步的，所述步骤2)或4)中的导电材料可为铜或锡或铜加锡金属材料。
进一步的，所述步骤3)焊殿直径为65um。
本发明技术效果主要体现在以下方面：1、本发明采用无基板正面封装的无焊线的形式，一面为LED发光面，另一面为导线连接面，形成紧密的现实模块布局，使得显示模块去基板去边框化，从而提升单位面积像素，提高显示的分辨率，从而使得显示效果更佳细腻；
1、封装时用胶材代替支架，无支架结构的屏幕点间距小于0.1Mm，减小各模块的间距，提升显示效果；
2、在显示模块封装过程中，以溅镀的方式代替焊线，增加产品的可靠性；
3、显示屏模块大小更加随意，拼接更少，人工成本更低，可靠性进一步提升；
附图说明
图1为本发明LED显示屏模块的封装工艺红绿蓝芯片布局图。
具体实施方式
结合附图，对本发明的具体实施方式作进一步详述，以使本发明技术方案更易于理解和掌握。
一种LED显示屏模块的封装工艺，包括一下步骤：
1)红蓝绿显示芯片按规律封在胶体表面；
2)在红蓝绿显示芯片背面镀上第一层导电膜，并将多余的膜雕刻掉形成所需的导电线路，从而使得各芯片串联导通；
3)在第一层导电膜上覆盖一层保护层，并将各芯片焊盘(BOND PAD)点保护层雕刻掉将焊盘裸露出来；
4)在保护层上再镀上第二层导电膜，并将多余的膜雕刻掉形成所需的导电线路，将芯片与控制器形成导通；
5)在第二层导电膜上覆上一层胶水，完成LED显示屏模块的封装。
在具体加工过程中，为了产品的可靠性，采用溅镀的方式进行镀导电膜，导电材料可以是铜、铝、铜加铝等金属材料，也是可以金属网格加透明通电材料，焊盘直径为65um。
本发明技术效果主要体现在以下方面：1、本发明采用无基板正面封装的无焊线的形式，一面为LED发光面，另一面为导线连接面，形成紧密的现实模块布局，使得显示模块去基板去边框化，从而提升单位面积像素，提高显示的分辨率，从而使得显示效果更佳细腻；
2、封装时用胶材代替支架，无支架结构的屏幕点间距小于0.1Mm，减小各模块的间距，提升显示效果；
3、在显示模块封装过程中，以溅镀的方式代替焊线，增加产品的可靠性；
4、显示屏模块大小更加随意，拼接更少，人工成本更低，可靠性进一步提升；
当然，以上只是本发明的典型实例，除此之外，本发明还可以有其它多种具体实施方式，凡采用等同替换或等效变换形成的技术方案，均落在本发明要求保护的范围之内。

Claims (4)

1.一种LED显示屏模块的封装工艺，包括以下步骤：
1)红蓝绿显示芯片按规律封在胶体表面；
2)在红蓝绿显示芯片背面镀上第一层导电膜，并将多余的膜雕刻掉形成所需的导电线路，从而使得各芯片串联导通；
3)在第一层导电膜上覆盖一层保护层，并将各芯片焊盘点保护层雕刻掉将焊盘裸露出来；
4)在保护层上再镀上第二层导电膜，并将多余的膜雕刻掉形成所需的导电线路，将芯片与控制器形成导通；
5)在第二层导电膜上覆上一层胶水，完成LED显示屏模块的封装。
2.如权利要求1所述的LED显示屏模块的封装工艺，其特征在于，所述步骤2)或4)中采用溅镀方式进行镀导电膜。
3.如权利要求1所述的LED显示屏模块的封装工艺，其特征在于，所述步骤2)或4)中的导电材料可为铜或锡或铜加锡金属材料。
4.如权利要求1所述的LED显示屏模块的封装工艺，其特征在于，所述步骤3)焊盘直径为65um。
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CN109243311A (zh) * 2018-09-28 2019-01-18 深圳市洁简达创新科技有限公司 一种立体堆叠封装led显示屏模块和立体堆叠封装方法
CN112864148A (zh) * 2021-01-19 2021-05-28 深圳市洁简达创新科技有限公司 一种调整焊盘高度的led显示屏模块和封装方法

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