CN106601823A - 一种薄膜晶体管的制作方法及薄膜晶体管 - Google Patents

一种薄膜晶体管的制作方法及薄膜晶体管 Download PDF

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CN106601823A
CN106601823A CN201611247423.9A CN201611247423A CN106601823A CN 106601823 A CN106601823 A CN 106601823A CN 201611247423 A CN201611247423 A CN 201611247423A CN 106601823 A CN106601823 A CN 106601823A
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layer
doped region
film transistor
thin film
underlay substrate
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马明超
樊君
李付强
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to CN201611247423.9A priority Critical patent/CN106601823A/zh
Publication of CN106601823A publication Critical patent/CN106601823A/zh
Priority to US15/718,191 priority patent/US20180190490A1/en
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Abstract

本发明公开了一种薄膜晶体管的制作方法及薄膜晶体管，通过对形成有金属诱导层的衬底基板进行退火处理，可以实现金属诱导晶化制备底栅型低温多晶硅薄膜晶体管，省去了制作顶栅型薄膜晶体管中的遮光层，从而节省了制作成本，简化了工艺，并且通过金属诱导晶化可以省去对多晶硅掺杂的步骤。此外，通过金属诱导晶化使得非晶硅转变为多晶硅，进而对多晶硅进行构图工艺，形成对应有源层和源漏极区域的第一掺杂区和第二掺杂区，可以实现沟道区与源漏区分区，保证薄膜晶体管的电性能；进而通过对第一掺杂区刻蚀可以去除沟道区因金属诱导晶化残留的金属粒子，降低器件的关态电流，解决了金属粒子残留的问题，保证了器件良好的电性能。

Description

一种薄膜晶体管的制作方法及薄膜晶体管
技术领域
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管的制作方法及薄膜晶体管。
背景技术
目前，液晶显示面板(LCD，Liquid Crystal Display)、电致发光(EL，electroluminescence)显示面板以及电子纸等显示装置已为人所熟知。在这些显示装置中具有控制各像素开关的薄膜晶体管(TFT，Thin Film Transistor)。一般地，如图1所示，薄膜晶体管的结构主要包括：位于衬底基板上的遮光层1、缓冲层2、有源层3、栅绝缘层4、栅极5、源极6和漏极7；其中，有源层采用多晶硅材料，遮光层用于遮挡外界光线对多晶硅材料的影响，防止有源层产生光生载流子，进而避免影响薄膜晶体管的开关特性。然而采用多晶硅材料作为有源层材料的薄膜晶体管，其关态电流较大，造成开关晶体管具有较大的漏电流，进而使得显示区域的像素开关特性不稳定，影响了显示装置的显示效果，降低了显示产品的良率。并且上述薄膜晶体管的膜层结构较复杂，不利于降低制作成本。
因此，如何简化薄膜晶体管的制作工艺，降低制作成本，且降低薄膜晶体管的关态电流，提高薄膜晶体管的电性能。
发明内容
本发明实施例提供了一种薄膜晶体管的制作方法及薄膜晶体管，用以解决现有技术中存在的薄膜晶体管的膜层结构较复杂，且薄膜晶体管的关态电流较大的问题。
本发明实施例提供了一种薄膜晶体管的制作方法，包括：在衬底基板上依次形成缓冲层、栅极和栅绝缘层的图形；还包括：
在形成有所述栅绝缘层的图形的衬底基板上形成非晶硅层；
在形成有所述非晶硅层的衬底基板上形成金属诱导层；
对形成有所述金属诱导层的衬底基板进行退火处理；
对退火处理后的所述衬底基板进行构图工艺，形成对应有源层的第一掺杂区和对应源漏极的第二掺杂区；
对形成的所述第一掺杂区进行刻蚀处理，形成有源层的图形；
在形成的所述第二掺杂区上形成对应的源极和漏极的图形。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述对形成有所述金属诱导层的衬底基板进行退火处理，包括：
在保护气体或真空的氛围中，采用预设温度对形成有所述金属诱导层的衬底基板加热预设时长，之后自然冷却至室温。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述预设温度为400～600℃，所述预设时长为10～20分钟。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述在形成有所述非晶硅层的衬底基板上形成金属诱导层，包括：
采用磁控溅射法在形成有所述非晶硅层的衬底基板上形成金属诱导层。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述金属诱导层的材料为铝、铜、镍、金、银或钼中的一种或多种组合。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述对形成的所述第一掺杂区进行刻蚀处理，形成有源层的图形，包括：
刻蚀掉所述第一掺杂区表面的峰值层，形成所述有源层的图形；其中，所述峰值层为所述第一掺杂区表面掺杂的金属离子浓度大于预设阈值的金属层；所述有源层在所述衬底基板上的正投影与所述栅极在所述衬底基板上的正投影重叠。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述在形成的所述第二掺杂区上形成对应的源极和漏极的图形，包括：
采用磁控溅射法在形成有所述第二掺杂区的衬底基板上沉积源漏极金属层；
对所述源漏极金属层进行构图工艺形成所述源极和所述漏极的图形。
在一种可能的实施方式中，本发明实施例提供的上述薄膜晶体管的制作方法中，所述源极为钛铝钛或钼铝钼的叠层结构；所述漏极为钛铝钛或钼铝钼的叠层结构。
本发明实施例提供了一种薄膜晶体管，所述薄膜晶体管使用本发明实施例提供的上述方法制作。
本发明实施例的有益效果包括：
本发明实施例提供了一种薄膜晶体管的制作方法及薄膜晶体管，该薄膜晶体管的制作方法包括：在衬底基板上依次形成缓冲层、栅极和栅绝缘层的图形；还包括：在形成有栅绝缘层的图形的衬底基板上形成非晶硅层；在形成有非晶硅层的衬底基板上形成金属诱导层；对形成有金属诱导层的衬底基板进行退火处理；对退火处理后的衬底基板进行构图工艺，形成对应有源层的第一掺杂区和对应源漏极的第二掺杂区；对形成的第一掺杂区进行刻蚀处理，形成有源层的图形；在形成的第二掺杂区上形成对应的源极和漏极的图形。
具体地，本发明提供的薄膜晶体管的制作方法中，通过对形成有金属诱导层的衬底基板进行退火处理，可以实现金属诱导晶化制备底栅型低温多晶硅薄膜晶体管，省去了制作顶栅型薄膜晶体管中的遮光层，从而节省了制作成本，简化了工艺，并且通过金属诱导晶化可以省去对多晶硅掺杂的步骤。此外，通过金属诱导晶化使得非晶硅转变为多晶硅，进而对多晶硅进行构图工艺，形成对应有源层和源漏极区域的第一掺杂区和第二掺杂区，这样可以实现沟道区与源漏区分区，保证薄膜晶体管的电性能；进而通过对第一掺杂区刻蚀可以去除沟道区因金属诱导晶化残留的金属粒子，降低器件的关态电流，解决了金属粒子残留的问题，保证了器件良好的电性能。
附图说明
图1为现有技术中薄膜晶体管的结构示意图；
图2为本发明实施例提供的薄膜晶体管的制作方法流程图；
图3a-图3i分别为本发明实施例提供的薄膜晶体管的制作过程示意图。
具体实施方式
下面结合附图，对本发明实施例提供的薄膜晶体管的制作方法及薄膜晶体管的具体实施方式进行详细的说明。
本发明实施例提供了一种薄膜晶体管的制作方法，如图2所示，可以包括：
S101、在衬底基板上依次形成缓冲层、栅极和栅绝缘层的图形；
S102、在形成有栅绝缘层的图形的衬底基板上形成非晶硅层；
S103、在形成有非晶硅层的衬底基板上形成金属诱导层；
S104、对形成有金属诱导层的衬底基板进行退火处理；
S105、对退火处理后的衬底基板进行构图工艺，形成对应有源层的第一掺杂区和对应源漏极的第二掺杂区；
S106、对形成的第一掺杂区进行刻蚀处理，形成有源层的图形；
S107、在形成的第二掺杂区上形成对应的源极和漏极的图形。
本发明实施例提供的上述薄膜晶体管的制作方法中，通过对形成有金属诱导层的衬底基板进行退火处理，可以实现金属诱导晶化制备底栅型低温多晶硅薄膜晶体管，省去了制作顶栅型薄膜晶体管中的遮光层，从而节省了制作成本，简化了工艺，并且通过金属诱导晶化可以省去对多晶硅掺杂的步骤。此外，通过金属诱导晶化使得非晶硅转变为多晶硅，进而对多晶硅进行构图工艺，形成对应有源层和源漏极区域的第一掺杂区和第二掺杂区，这样可以是实现沟道区与源漏区分区，保证薄膜晶体管的电性能；进而通过对第一掺杂区刻蚀可以去除沟道区因金属诱导晶化残留的金属粒子，降低器件的关态电流，解决了金属粒子残留的问题，保证了器件良好的电性能。
在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法中，步骤S104，可以包括：在保护气体或真空的氛围中，采用预设加热温度对形成有金属诱导层的衬底基板加热预设时长，之后自然冷却至室温。其中，预设温度可以为400～600℃，预设时长可以为10～20分钟。具体地，本发明实施例提供的上述薄膜晶体管的制作方法中，可以在形成有非晶硅层的衬底基板上，采用磁控溅射法在形成有非晶硅层的衬底基板上沉积金属诱导层，该金属诱导层的材料可以为铝、铜、镍、金、银或钼中的一种或多种组合。在沉积金属诱导层之后，通过采用400～600℃的处理温度，对衬底基板进行10～20分钟的退火处理，进而实现通过金属诱导晶化使得非晶硅转变为多晶硅。另外，通过金属诱导晶化可以省去对多晶硅的掺杂步骤。
在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法中，步骤S106，可以包括：刻蚀掉第一掺杂区表面的峰值层，形成有源层的图形；其中，峰值层为第一掺杂区表面掺杂的金属离子浓度大于预设阈值的金属层；有源层在衬底基板上的正投影与栅极在衬底基板上的正投影重叠。具体地，对金属诱导晶化后的多晶硅进行构图工艺，可以得到对应有源层的第一掺杂区和对应源漏极的第二掺杂区；进而对第一掺杂区进行刻蚀工艺，刻蚀掉第一掺杂区因金属诱导晶化残留的金属离子，从而可以减小沟道区的漏电流。在进行刻蚀工艺时，由于材料不同所产生的气体不同，因此可通过检测气体种类来保证刻蚀程度；也可以通过膜层厚度与刻蚀时间的关系来控制刻蚀深度，以保证对第一掺杂区的刻蚀可以完全刻蚀掉金属离子掺杂浓度较大的峰值层。
在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法中，步骤S107可以包括：采用磁控溅射法在形成有第二掺杂区的衬底基板上沉积源漏极金属层；对源漏极金属层进行构图工艺形成源极和漏极的图形。具体地，可以采用磁控溅射法在形成有第二掺杂区的衬底基板上沉积源漏极金属层，进而对源漏金属层进行构图工艺，形成对应的源漏极。另外，对金属诱导晶化后的多晶硅进行构图工艺，得到的对应源漏极的第二掺杂区中掺杂有金属离子，第二掺杂区可以作为源漏极与有源层之间的欧姆接触，这样可以省去金属诱导晶化后剥离金属诱导层的步骤。
在具体实施时，本发明实施例提供的上述薄膜晶体管的制作方法中，源极可以为钛铝钛或钼铝钼的叠层结构；漏极也可以为钛铝钛或钼铝钼的叠层结构。具体地，本发明实施例提供的上述薄膜晶体管的制作方法中，可以沉积叠层金属钛铝钛或钼铝钼作为源漏极金属层，进而对该源漏极金属层进行构图工艺形成源极和漏极。
基于同一发明构思，本发明实施例提供了一种薄膜晶体管，薄膜晶体管使用本发明实施例提供的上述方法制作。
下面以一个具体实施例详细说明采用本发明提供的方法制作薄膜晶体管的过程，具体如下：
1、采用化学气相沉积法在衬底基板01上形成缓冲层02；
形成缓冲层02的衬底基板如图3a所示；其中，衬底基板的材料可以为玻璃、石英、硅或有机聚合物等，缓冲层的材料可以是氧化硅、氮化硅或者两者的组合物；
2、采用磁控溅射法在形成有缓冲层02的衬底基板上沉积栅极金属，并对该栅极金属层进行构图工艺形成栅极03；
形成栅极03后的衬底基板如图3b所示；其中，栅极的材料可以为钼、铝、钛、铜或金等材料；
3、采用化学气相沉积法在形成有栅极03的衬底基板上沉积栅绝缘层04；
形成栅绝缘层04后的衬底基板如图3c所示；其中，栅绝缘层的材料可以是氧化硅、氮化硅或者两者的组合，也可选用导热性好的其他氧化物如氧化铝等，同时栅绝缘层也可作为金属诱导阻挡层，阻挡后续退火时栅极与多晶硅发生相互作用；
4、采用化学气相沉积法在形成有栅绝缘层04的衬底基板上形成非晶硅层05；形成非晶硅层05后的衬底基板如图3d所示；
5、在形成有非晶硅层05的衬底基板上形成金属诱导层06；形成金属诱导层06后的衬底基板如图3e所示；
6、对形成有金属诱导层06的衬底基板进行退火处理；
退火处理之后的非晶硅层05转变为多晶硅层050，退火处理之后的衬底基板如图3f所示；
7、对退火处理后的衬底基板进行构图工艺，形成对应有源层的第一掺杂区0501和对应源漏极的第二掺杂区0502；形成第一掺杂区0501和第二掺杂区0502的衬底基板如图3g所示；
8、对形成的第一掺杂区0501进行刻蚀处理，形成有源层07的图形；形成有源层07后的衬底基板如图3h所示；
9、在形成的第二掺杂区0502上形成对应的源极08和漏极09的图形；形成源极08和漏极09后的衬底基板如图3i所示。
本发明实施例提供了一种薄膜晶体管的制作方法及薄膜晶体管，该薄膜晶体管的制作方法包括：在衬底基板上依次形成缓冲层、栅极和栅绝缘层的图形；还包括：在形成有栅绝缘层的图形的衬底基板上形成非晶硅层；在形成有非晶硅层的衬底基板上形成金属诱导层；对形成有金属诱导层的衬底基板进行退火处理；对退火处理后的衬底基板进行构图工艺，形成对应有源层的第一掺杂区和对应源漏极的第二掺杂区；对形成的第一掺杂区进行刻蚀处理，形成有源层的图形；在形成的第二掺杂区上形成对应的源极和漏极的图形。
具体地，本发明提供的薄膜晶体管的制作方法中，通过对形成有金属诱导层的衬底基板进行退火处理，可以实现金属诱导晶化制备底栅型低温多晶硅薄膜晶体管，省去了制作顶栅型薄膜晶体管中的遮光层，从而节省了制作成本，简化了工艺，并且通过金属诱导晶化可以省去对多晶硅掺杂的步骤。此外，通过金属诱导晶化使得非晶硅转变为多晶硅，进而对多晶硅进行构图工艺，形成对应有源层和源漏极区域的第一掺杂区和第二掺杂区，这样可以实现沟道区与源漏区分区，保证薄膜晶体管的电性能；进而通过对第一掺杂区刻蚀可以去除沟道区因金属诱导晶化残留的金属粒子，降低器件的关态电流，解决了金属粒子残留的问题，保证了器件良好的电性能。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (9)

1.一种薄膜晶体管的制作方法，包括：在衬底基板上依次形成缓冲层、栅极和栅绝缘层的图形；其特征在于，还包括：
在形成有所述栅绝缘层的图形的衬底基板上形成非晶硅层；
在形成有所述非晶硅层的衬底基板上形成金属诱导层；
对形成有所述金属诱导层的衬底基板进行退火处理；
对退火处理后的所述衬底基板进行构图工艺，形成对应有源层的第一掺杂区和对应源漏极的第二掺杂区；
对形成的所述第一掺杂区进行刻蚀处理，形成有源层的图形；
在形成的所述第二掺杂区上形成对应的源极和漏极的图形。
2.如权利要求1所述的方法，其特征在于，所述对形成有所述金属诱导层的衬底基板进行退火处理，包括：
在保护气体或真空的氛围中，采用预设温度对形成有所述金属诱导层的衬底基板加热预设时长，之后自然冷却至室温。
3.如权利要求2所述的方法，其特征在于，所述预设温度为400～600℃，所述预设时长为10～20分钟。
4.如权利要求1-3任一项所述的方法，其特征在于，所述在形成有所述非晶硅层的衬底基板上形成金属诱导层，包括：
采用磁控溅射法在形成有所述非晶硅层的衬底基板上形成金属诱导层。
5.如权利要求5所述的方法，其特征在于，所述金属诱导层的材料为铝、铜、镍、金、银或钼中的一种或多种组合。
6.如权利要求1所述的方法，其特征在于，所述对形成的所述第一掺杂区进行刻蚀处理，形成有源层的图形，包括：
刻蚀掉所述第一掺杂区表面的峰值层，形成所述有源层的图形；其中，所述峰值层为所述第一掺杂区表面掺杂的金属离子浓度大于预设阈值的金属层；所述有源层在所述衬底基板上的正投影与所述栅极在所述衬底基板上的正投影重叠。
7.如权利要求1所述的方法，其特征在于，所述在形成的所述第二掺杂区上形成对应的源极和漏极的图形，包括：
采用磁控溅射法在形成有所述第二掺杂区的衬底基板上沉积源漏极金属层；
对所述源漏极金属层进行构图工艺形成所述源极和所述漏极的图形。
8.如权利要求7所述的方法，其特征在于，所述源极为钛铝钛或钼铝钼的叠层结构；所述漏极为钛铝钛或钼铝钼的叠层结构。
9.一种薄膜晶体管，其特征在于，所述薄膜晶体管使用如权利要求1-8任一项所述的方法制作。
CN201611247423.9A 2016-12-29 2016-12-29 一种薄膜晶体管的制作方法及薄膜晶体管 Pending CN106601823A (zh)

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CN110707046A (zh) * 2019-09-17 2020-01-17 深圳市华星光电技术有限公司 阵列基板及其制备方法
CN111129032A (zh) * 2019-12-19 2020-05-08 武汉华星光电技术有限公司 一种阵列基板及其制作方法
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