CN106569967B - 双列直插式存储器模块固态硬盘片上系统及模拟方法 - Google Patents

双列直插式存储器模块固态硬盘片上系统及模拟方法 Download PDF

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Publication number
CN106569967B
CN106569967B CN201610810976.4A CN201610810976A CN106569967B CN 106569967 B CN106569967 B CN 106569967B CN 201610810976 A CN201610810976 A CN 201610810976A CN 106569967 B CN106569967 B CN 106569967B
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chip
solid state
dual inline
memory modules
inline memory
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Chinese (zh)
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CN106569967A (zh
Inventor
克雷格·汉森
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Memory System (AREA)
  • Dram (AREA)
CN201610810976.4A 2015-10-07 2016-09-08 双列直插式存储器模块固态硬盘片上系统及模拟方法 Active CN106569967B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562238659P 2015-10-07 2015-10-07
US62/238,659 2015-10-07
US14/973,720 US9666263B2 (en) 2015-10-07 2015-12-17 DIMM SSD SoC DRAM byte lane skewing
US14/973,720 2015-12-17

Publications (2)

Publication Number Publication Date
CN106569967A CN106569967A (zh) 2017-04-19
CN106569967B true CN106569967B (zh) 2019-11-22

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Country Link
US (1) US9666263B2 (enExample)
JP (1) JP6775353B2 (enExample)
KR (1) KR102457095B1 (enExample)
CN (1) CN106569967B (enExample)
TW (1) TW201714174A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10845866B2 (en) * 2017-06-22 2020-11-24 Micron Technology, Inc. Non-volatile memory system or sub-system
JP2022512058A (ja) 2018-12-21 2022-02-02 イルミナ インコーポレイテッド ヌクレアーゼを利用したｒｎａ枯渇
KR102721961B1 (ko) 2020-07-22 2024-10-28 삼성전자주식회사 메모리 모듈 및 이를 포함하는 메모리 시스템
KR20230045861A (ko) * 2021-09-29 2023-04-05 삼성전자주식회사 메모리 모듈의 반도체 메모리 장치의 동작을 설계 레벨에서 검증하는 시뮬레이션 방법 및 시스템

Citations (2)

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US8081537B1 (en) * 2004-03-05 2011-12-20 Netlist, Inc. Circuit for providing chip-select signals to a plurality of ranks of a DDR memory module
CN104810054A (zh) * 2014-01-23 2015-07-29 三星电子株式会社 控制目标模块的写入均衡的电路及其方法

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KR20020010300A (ko) * 2000-07-29 2002-02-04 박종섭 반도체 소자의 클럭 테스트 장치
JP5156932B2 (ja) * 2004-03-31 2013-03-06 ラウンド ロック リサーチ、エルエルシー 集積回路における信号タイミングの再構成
KR100725783B1 (ko) * 2004-12-14 2007-06-08 한국전자통신연구원 Ｓｎｍｐ를 이용한 망 관리 에이전트로 구성된홈게이트웨이 시스템 및 홈게이트웨이 시스템에서ｓｎｍｐ를 이용한 망 관리 에이전트 구성 방법
KR20060081522A (ko) 2005-01-10 2006-07-13 삼성전자주식회사 피씨아이 익스프레스의 바이트 스큐 보상방법 및 이를위한 피씨아이 익스프레스 물리 계층 수신기
US7457978B2 (en) 2005-05-09 2008-11-25 Micron Technology, Inc. Adjustable byte lane offset for memory module to reduce skew
KR101300854B1 (ko) * 2007-03-05 2013-08-27 삼성전자주식회사 직교 주파수 다중 접속 무선 통신 시스템에서 자원 할당장치 및 방법
US7725783B2 (en) * 2007-07-20 2010-05-25 International Business Machines Corporation Method and apparatus for repeatable drive strength assessments of high speed memory DIMMs
KR100897298B1 (ko) * 2007-12-27 2009-05-14 (주)인디링스 읽기 신호 타이밍을 조정하는 플래시 메모리 장치 및플래시 메모리 장치의 읽기 제어 방법
US7975164B2 (en) 2008-06-06 2011-07-05 Uniquify, Incorporated DDR memory controller
US8073090B2 (en) 2008-07-11 2011-12-06 Integrated Device Technology, Inc. Synchronous de-skew with programmable latency for multi-lane high speed serial interface
US8472279B2 (en) * 2010-08-31 2013-06-25 Micron Technology, Inc. Channel skewing
KR20150006560A (ko) * 2013-07-09 2015-01-19 주식회사 에스원 디지털 도어 락의 소비 전력 감소를 통한 배터리 수명 연장 방법 및 이를 이용한 디지털 도어락 시스템

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8081537B1 (en) * 2004-03-05 2011-12-20 Netlist, Inc. Circuit for providing chip-select signals to a plurality of ranks of a DDR memory module
CN104810054A (zh) * 2014-01-23 2015-07-29 三星电子株式会社 控制目标模块的写入均衡的电路及其方法

Also Published As

Publication number Publication date
JP2017073122A (ja) 2017-04-13
US20170103796A1 (en) 2017-04-13
CN106569967A (zh) 2017-04-19
JP6775353B2 (ja) 2020-10-28
TW201714174A (zh) 2017-04-16
US9666263B2 (en) 2017-05-30
KR102457095B1 (ko) 2022-10-20
KR20170041615A (ko) 2017-04-17

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