CN106502080A - 制造微机械钟表部件的方法和所述微机械钟表部件 - Google Patents
制造微机械钟表部件的方法和所述微机械钟表部件 Download PDFInfo
- Publication number
- CN106502080A CN106502080A CN201610803279.6A CN201610803279A CN106502080A CN 106502080 A CN106502080 A CN 106502080A CN 201610803279 A CN201610803279 A CN 201610803279A CN 106502080 A CN106502080 A CN 106502080A
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- Prior art keywords
- silicon
- hole
- depth
- based substrate
- layer
- Prior art date
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- Granted
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 41
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 9
- 239000010432 diamond Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 11
- 238000004062 sedimentation Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0002—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
- G04D3/0028—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism
- G04D3/003—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism for levers
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
- G04B13/021—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft
- G04B13/022—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft with parts made of hard material, e.g. silicon, diamond, sapphire, quartz and the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10798—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing silicone
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B18/00—Mechanisms for setting frequency
- G04B18/08—Component parts or constructional details
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B31/00—Bearings; Point suspensions or counter-point suspensions; Pivot bearings; Single parts therefor
- G04B31/004—Bearings; Point suspensions or counter-point suspensions; Pivot bearings; Single parts therefor characterised by the material used
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0002—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
- G04D3/0028—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism
- G04D3/0033—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism for lever wheels
-
- G—PHYSICS
- G04—HOROLOGY
- G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
- G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
- G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/035—Microgears
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/00992—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C1/0092 - B81C1/00984
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/034—Moulding
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Micromachines (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
由硅基基底(1)制造微机械钟表部件的方法,其依序包括步骤:a)在所述硅基基底(1)的表面的至少一个部分的表面上形成确定深度的孔(2),b)用选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料完全填充所述孔(2),以在孔(2)中形成厚度至少等于孔(2)的深度的所述材料的层。本发明还涉及包含硅基基底(1)的微机械钟表部件,其在所述硅基基底(1)的表面的至少一个部分的表面上具有确定深度的孔(2),所述孔(2)被厚度至少等于孔(2)的深度的选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料的层完全填充。
Description
技术领域
本发明涉及制造增强的硅基微机械钟表部件的方法。本发明还涉及增强的硅基微机械钟表部件,特别能够通过这种方法获得的那些。
发明背景
硅是越来越多地用于制造微机械钟表部件的材料,特别是保持与它们被机械加工在其上的硅基基底连接的部件。
相对于用作制造微机械钟表部件,如齿轮或擒纵机构组件的标准的金属或合金,硅具有许多优点。其是非常轻质的极硬材料,这因此使其可具有大幅降低的惯性并因此改进效率。硅同样可以制造复杂或整体部件。
为了改进或改变硅的性质,已知在硅上沉积合适材料的层。因此,为了改进其摩擦学性质,在硅上沉积金刚石,例如通过薄膜气相沉积法(CVD/PVD)进行。
但是,当沉积层的厚度超过几微米时,这些方法具有可证实太慢的沉积速率。实际上,CVD机器中的沉积速率例如通常为10纳米/分钟左右,这一技术通常不用于制造大于几微米的层。
因此必须提出能够实现在硅上快速沉积合适材料的厚层的制造硅基微机械钟表部件的方法。
发明内容
为此,本发明涉及一种由硅基基底制造微机械钟表部件的方法,其依序包括步骤:
a)在所述硅基基底的表面的至少一个部分的表面上形成确定深度的孔,
b)用选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料完全填充所述孔,以在所述孔中形成厚度至少等于所述孔的深度的所述材料的层。
本发明还涉及能够通过如上定义的方法获得的微机械钟表部件。
本发明还涉及包含在其表面之一的至少一个部分的表面上具有确定深度的孔的硅基基底的微机械钟表部件,所述孔被厚度至少等于所述孔的深度的选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料的层完全填充。
有利地,该钟表部件可包含在硅基基底的表面和用所述材料填充的孔的表面上的所述材料的表面层。
由于在基底表面上预先形成孔,本发明的方法能够产生比初始表面大得多的实际基底表面并因此极大提高合适材料的表观沉积速率。因此,相对于在类似但无孔基底的平面上的沉积,本发明的方法能够在大幅降低的快速时间内在硅基基底的表面上制造合适材料的厚层。
附图说明
在仅作为非限制性实例给出并通过附图示出的本发明的至少一个实施方案的下列详述中更清楚看出本发明的目标、优点和特征,其中:
-图1至3示意性示出本发明的制造方法的步骤。
具体实施方式
根据本发明由硅基基底制造微机械钟表部件的方法首先包括步骤a):由所述硅基基底的表面的至少一个部分的表面开始,形成确定深度的孔,所述孔在硅基基底的外表面处打开。根据要形成的微机械钟表部件选择硅基基底。在实施本发明的方法之前或之后,取决于要制造的微机械钟表部件,给出硅基基底的最终形式。在本发明中,术语“硅基基底”是指基底中的硅层和由硅制成的基底二者。优选地,如图1中所示,硅基基底1是硅晶片或SOI晶片(绝缘体上的硅)。既可以在平行于基底平面的表面上也可以在垂直于基底平面的表面上形成孔。
有利地,这一步骤a)可通过选自电化学蚀刻法、“Stain-etch”型方法和“MAC-Etch”型方法的方法实现。
电化学蚀刻法可以是电化学阳极化法。其实施要求使用含有在水溶液中或与1至10%浓度的乙醇混合的氢氟酸的电化学浴。电流和电极对创造造成硅蚀刻的电化学条件是必要的。根据电化学条件,可以获得各种类型的孔。这样的方法是本领域技术人员已知的并且在此不需要详细信息。
“Stain-etch”型方法基于硅的湿蚀刻,直接导致形成多孔硅。通常,用HF:HNO3比为50–500:1的HF/HNO3/H2O溶液进行蚀刻。这一方法具有在该浴中不需要供电的优点。这样的方法是本领域技术人员已知的并且在此不需要详细信息。
步骤a)优选通过“MAC-Etch”型方法实现。这种方法基于使用贵金属的粒子以催化局部化学蚀刻反应。通常,沉积贵金属(金、银、铂)的极薄层(10-50纳米)并以无规方式或通过剥离、蚀刻、激光等结构化。贵金属优选是金。更特别地,可以有利地使用在HF/H2O2混合物中的金粒子溶液。粒子的尺寸可以为5至1,000纳米。可以通过金的光刻、蚀刻或剥离获得结构化。另一选项是蒸发或阴极雾化(溅射)极细非封闭层(5-30纳米)。热处理有助于形成金的小岛。
在将具有贵金属层的硅浸在HF/H2O2混合物的水溶液中时,贵金属局部催化硅的溶解。这一蚀刻溶液通常可包含4ml:1ml:8ml(48%HF:30%H2O2:H2O)至4ml:1ml:40ml(48%HF:30%H2O2:H2O)。优选在金属下方产生硅的溶解,该金属随后逐渐渗入硅中。这一反应可根据基本受硅晶体的取向、表面布置、掺杂和浴的化学性影响的传播模式在大深度(>100微米)上延续。“MAC-Etch”型方法的优点在于在浴中不需要供电,同时允许在硅中形成深度极大(>100微米)的孔。因此特别适合使用SOI晶片作为通常用于制造钟表组件的基底。
本领域技术人员了解为使在硅基基底中形成的孔具有合适的几何和尺寸而实施上述方法的参数。
特别地,孔可有利地具有小于或等于100:1的纵横系数(深度:直径比)。特别地,当步骤b)通过PVD沉积实现时,该硅基基底中的孔的纵横系数优选小于或等于4:1。当步骤b)通过CVD或MOCVD沉积(金属有机化学气相沉积)实现时,该硅基基底中的孔的纵横系数优选小于或等于50:1。
优选地,孔可具有大于100微米,优选大于200微米,更优选大于300微米的深度。
如图2中所示,在硅基基底1中在一定深度上形成孔2导致在相同深度上形成在孔2之间的硅基柱体3。优选地,在考虑硅基柱体具有圆形横截面时,孔2的形成应使硅基柱体3的投影表面小于表观总表面的79%以不使硅基柱体接触,所述接触会使该结构僵化(这对应于渗流阈值)。
本发明的方法的第二步骤b)在于用选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料完全填充在步骤a)的过程中在硅基基底中形成的孔,以在所述孔中形成厚度至少等于所述孔的深度的所述材料的层。
该第二步骤b)直接在步骤a)后进行而没有任何中间步骤,因此沉积在孔中的材料与所述孔的壁直接接触。
步骤b)优选通过选自薄膜沉积法,如化学气相沉积(CVD)、物理气相沉积(PVD)、薄原子层沉积(ALD)和热氧化法的方法实现。这些方法是本领域技术人员已知的并且在此不需要详细信息。但是可以规定,对于PVD的沉积,沉积速率优选为0.1至5nm/s。对于通过CVD或MOCVD的沉积,沉积速率优选为0.01至10nm/s。对于通过ALD的沉积,沉积速率为例如0.01nm/s。此外,热氧化特别有利于降低硅基底中的硅比例,硅通过生长以层厚度的大约50%的比率消耗。因此,本领域技术人员可以确定为使100%的硅被SiO2替代而需要在硅基底中形成的孔的尺寸,由此在极短时间间隔内形成极厚SiO2层。
有利地,本发明的方法在步骤b)后包括步骤c):在基底的表面和用所述材料填充的孔的表面上形成所述材料的表面层。更特别地,该表面层可以这样获得:通过延长根据步骤b)的材料沉积从而不仅用所述材料完全填充孔2还随后在用所述材料填充的孔2上以及在柱体3上沉积所述材料以形成厚度h0的所述材料的完整层4,如图3中所示。由此获得包含柱体3、用所述材料填充的孔2和完整层4的厚度h1的复合层。因此,h0/h1的比率可以例如为10%左右。
因此,本发明的方法能够获得包含基于沉积的硅/材料的厚复合层或甚至沉积材料的厚层(在所有的硅被替代时)的微机械钟表部件。
在步骤a)的过程中由基底的表面开始形成孔能够产生大波纹以产生远大于无孔的初始表面的实际表面。本领域技术人员可以选择孔的几何以及材料在孔中的沉积时间,从而在与在平面上沉积相比大幅降低的时间内在硅表面上制造厚层。更特别地,本领域技术人员可以选择孔的几何和尺寸从而:
-在该材料的沉积过程中获得孔的完全填充,
-促进气体的流动
-获得沉积的材料的层与硅孔之间的所需体积比。如果必要,可以例如制造具有大于90%的孔隙率的多孔硅。
例如对于某些沉积法,如CVD和PVD,使沉积速率倾斜以在孔底部较慢。因此可以提供圆锥形孔(在表面比在深处宽)以补偿与气体流速相关的该现象。
因此,在孔中的气体供应充足的情况下,本发明的方法可以在与获得对应于表面层4的厚度h0的完整材料层所需的时间类似的沉积时间内获得以厚度h1沉积的硅/材料复合层。
通过经CVD形成金刚石厚层,本发明的方法可有利地用于制造基于硅的擒纵机构的组件,如擒纵轮和擒纵棘爪。
如果使用热氧化法沉积SiO2,则通过形成几乎固体的SiO2厚层,本发明的方法同样可用于制造基于硅的擒纵机构的组件。
通过将其与由多孔硅制成的区域的结构化相结合,本发明的方法同样可用于在硅中深入地快速制造大厚度的局部层。
Claims (13)
1.由硅基基底(1)制造微机械钟表部件的方法,其依序包括步骤:
a)在所述硅基基底(1)的表面的至少一个部分的表面上形成确定深度的孔(2),
b)用选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料完全填充所述孔(2),以在孔(2)中形成厚度至少等于孔(2)的深度的所述材料的层。
2.根据权利要求1的方法,其在步骤b)后包括步骤c):在硅基基底(1)的表面和用所述材料填充的孔(2)的表面上形成所述材料的表面层(4)。
3.根据权利要求1的方法,其中步骤a)通过选自电化学蚀刻法、“Stain-etch”型方法和“MAC-Etch”型方法的方法实现。
4.根据权利要求3的方法,其中步骤a)通过“MAC-Etch”型方法实现。
5.根据权利要求1的方法,其中步骤b)通过选自薄膜沉积法和热氧化法的方法实现。
6.根据权利要求1的方法,其中所述孔具有小于或等于100:1的纵横系数(深度:直径比)。
7.根据权利要求1的方法,其中所述孔(2)具有大于100微米的深度。
8.根据权利要求7的方法,其中所述孔(2)具有大于200微米的深度。
9.根据权利要求8的方法,其中所述孔(2)具有大于300微米的深度。
10.根据权利要求1的方法,其中硅基基底(1)是硅晶片或SOI晶片(绝缘体上的硅)。
11.能够通过根据权利要求1至10任一项的方法获得的机械钟表部件。
12.微机械钟表部件,包含硅基基底(1),其在所述硅基基底(1)的表面的至少一个部分的表面上具有确定深度的孔(2),所述孔(2)被选自金刚石、类金刚石碳(DLC)、氧化硅、氮化硅、陶瓷、聚合物及其混合物的材料的层完全填充,该层的厚度至少等于孔(2)的深度。
13.根据权利要求12的微机械钟表部件,其特征在于其包含在硅基基底(1)的表面和用所述材料填充的孔(2)的表面上的所述材料的表面层。
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JP2015125031A (ja) * | 2013-12-26 | 2015-07-06 | シチズンホールディングス株式会社 | ひげぜんまい及びその製造方法 |
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US10558169B2 (en) | 2020-02-11 |
EP3141519B1 (fr) | 2018-03-14 |
TWI694049B (zh) | 2020-05-21 |
KR102004591B1 (ko) | 2019-07-26 |
US20170068215A1 (en) | 2017-03-09 |
KR20170030059A (ko) | 2017-03-16 |
JP6259502B2 (ja) | 2018-01-10 |
CH711498B1 (fr) | 2020-03-13 |
CN106502080B (zh) | 2020-05-15 |
CH711498A2 (fr) | 2017-03-15 |
TW201722838A (zh) | 2017-07-01 |
EP3141519A1 (fr) | 2017-03-15 |
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