TW201722838A - 用於製造微機械時計零件的方法及該微機械時計零件 - Google Patents

用於製造微機械時計零件的方法及該微機械時計零件 Download PDF

Info

Publication number
TW201722838A
TW201722838A TW105124633A TW105124633A TW201722838A TW 201722838 A TW201722838 A TW 201722838A TW 105124633 A TW105124633 A TW 105124633A TW 105124633 A TW105124633 A TW 105124633A TW 201722838 A TW201722838 A TW 201722838A
Authority
TW
Taiwan
Prior art keywords
pores
depth
layer
ruthenium
based substrate
Prior art date
Application number
TW105124633A
Other languages
English (en)
Other versions
TWI694049B (zh
Inventor
菲利浦 杜包斯
Original Assignee
尼瓦克斯 法爾公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼瓦克斯 法爾公司 filed Critical 尼瓦克斯 法爾公司
Publication of TW201722838A publication Critical patent/TW201722838A/zh
Application granted granted Critical
Publication of TWI694049B publication Critical patent/TWI694049B/zh

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B15/00—Escapements
    • G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B13/00—Gearwork
    • G04B13/02—Wheels; Pinions; Spindles; Pivots
    • G04B13/021—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft
    • G04B13/022—Wheels; Pinions; Spindles; Pivots elastic fitting with a spindle, axis or shaft with parts made of hard material, e.g. silicon, diamond, sapphire, quartz and the like
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0002—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
    • G04D3/0028—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism
    • G04D3/003—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism for levers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10798—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing silicone
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/007—For controlling stiffness, e.g. ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B13/00—Gearwork
    • G04B13/02—Wheels; Pinions; Spindles; Pivots
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B18/00—Mechanisms for setting frequency
    • G04B18/08—Component parts or constructional details
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B31/00—Bearings; Point suspensions or counter-point suspensions; Pivot bearings; Single parts therefor
    • G04B31/004—Bearings; Point suspensions or counter-point suspensions; Pivot bearings; Single parts therefor characterised by the material used
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0002—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe
    • G04D3/0028—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism
    • G04D3/0033—Watchmakers' or watch-repairers' machines or tools for working materials for mechanical working other than with a lathe for components of the escape mechanism for lever wheels
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/035—Microgears
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/00992—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C1/0092 - B81C1/00984
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/034—Moulding
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C23C14/0611—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一種用於從矽基基底(1)開始製造微機械時計零件的方法，其依序包括以下的步驟：a)在矽基基底(1)的表面的至少一部分的表面上形成確定深度的細孔(2)；b)以選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料完全地填充細孔(2)，以在細孔(2)中形成厚度至少相當於細孔(2)的深度的所述材料的層。本發明亦關於一種微機械時計零件，其包括矽基基底(1)，矽基基底(1)在矽基基底(1)的表面的至少一部分的表面上具有確定深度的細孔(2)，細孔(2)被選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料的層完全地填充，所述材料的層的厚度至少相當於細孔(2)的深度。

Description

用於製造微機械時計零件的方法及該微機械時計零件
本發明關於一種用於製造矽基、強化的微機械時計零件的方法。本發明亦關於一種矽基、強化的微機械時計零件，尤其是能夠藉由這樣的方法得到的微機械時計零件。
矽為一種越來越多地被使用在微機械時計零件的製造中的材料，特別是保持為被連接到它們已在其上被加工的矽基基底的零件。
相較於被用來作為用於製造微機械時計零件(例如，齒輪)或擒縱件(escapement)的部件的標準之金屬或合金，矽具有許多優點。其為重量非常輕但非常堅固的材料，這使得其因此能夠使其具有降低許多的慣性且因此提高了效率。矽同樣使其能夠去製造複雜或整體的零件。
為了增進或修飾矽的性質，已知的是在矽上沉積適當材料的層。因此，為了增進其摩潤性質(tribological property)，金剛石藉由，例如，薄膜氣相沉積 (CVD/PVD)的方法，而被沉積在矽上。
然而，這些方法具有沉積率(deposition rate)，當被沉積層的厚度超過數個微米時，沉積率可證明這些方法為太慢的。事實上，例如，在CVD機器中的沉積率一般為十奈米/分鐘的等級，此技術一般不會被使用於超過數個微米的層的製造。
因此，必須要提出一種用於製造矽基微機械時計零件的方法，這使得其能夠達成在矽上之適當材料的厚層的快速沉積。
為此目的，本發明關於一種用於從矽基基底開始製造微機械時計零件的方法，其依序包括以下的步驟：a)在矽基基底的表面的至少一部分的表面上形成確定深度的細孔，b)以選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料完全地填充細孔，以在細孔中形成厚度至少相當於細孔的深度的材料的層。
本發明亦關於一種微機械時計零件，其能夠藉由如上述所定義之方法而被得到。
本發明亦關於一種微機械時計零件，其包括矽基基底，矽基基底在其表面之一的至少一部分的表面上具有確定深度的細孔，細孔被選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料的層完全 地填充，材料的層的厚度至少相當於細孔的深度。
較佳地，時計零件可在矽基基底及被材料填充的細孔的表面上包括材料的表面層。
由於在基底的表面上之細孔的在先形成，根據本發明的方法使得其能夠去建立實際的基底表面，其為較初始表面大的多的，且因此大幅地增加適當材料之顯而易見的沉積率。因此，根據本發明的方法使得其能夠在快速的時間內於矽基基底的表面上去製造適當材料的厚層，時間相對於在類似的但非多孔的基底的平坦表面上的沉積大幅地減少。
1‧‧‧矽基基底
2‧‧‧細孔
3‧‧‧矽基柱
4‧‧‧完全層(表面層)
h0‧‧‧厚度
h1‧‧‧厚度
本發明的目標及優勢在本發明的至少一實施例的以下詳細說明中將顯得更為清楚，本發明的至少一實施例的以下詳細說明僅以非限制性例子的方式被提供且藉由所附的圖式被顯示出來，其中：
-圖1至圖3示意性地顯示根據本發明的製造方法的步驟。
根據本發明之用於從矽基基底開始製造微機械時計零件的方法首先包括步驟a)，其從矽基基底的表面的至少一部分的表面形成確定深度的細孔，此等細孔在矽基基底的外表面處對外開口。隨著要被形成的微機械時計零件的 功能而選定矽基基底。在本發明的方法的實施之前或之後，隨著要被製造出來的微機械時計零件的功能，給出矽基基底的最終型態。在本發明中，詞句「矽基基底」指的是在基底中的矽層以及由矽所製成的基底兩者。較佳地，如同圖1所表示的，矽基基底1為矽晶圓或矽晶絕緣體(Silicon-on-Insulator，SOI)晶圓。細孔可被形成在平行於基底的平面之表面上以及形成在垂直於基底的平面之表面上。
較佳地，此步驟a)可藉由從包含藉由電化學蝕刻(electrochemical etching)的方法、«Stain-etch»型的方法、以及«MAC-Etch»型的方法的群組選出的方法來達成。
藉由電化學蝕刻的方法可為藉由電化學陽極化處理(anodisation)的方法。其實施需要使用電化學槽，電化學槽在水溶液中含有氫氟酸(hydrofluoric acid)或被與1到10%濃度的乙醇混合。電流及電極為必要的，以建立造成矽的蝕刻之電化學條件。根據電化學條件，可得到各種類型的細孔。這種方法為本領域技術人士所習知的，且在此不需要詳細的資訊。
«Stain-etch»型的方法係基於直接造成多孔矽的形成之矽的濕蝕刻(moist etching)。一般而言，蝕刻藉由具有50-500：1的HF：HNO3比率之HF/HNO3/H2O溶液而發生。此方法具有不需要在槽中的電力供應的優點。此方法為本領域技術人士所習知的，且在此不需要詳細的資 訊。
較佳地，步驟a)藉由«MAC-Etch»型的方法來達成。此方法係基於貴金屬(noble metal)的粒子的使用，以催化局部化學蝕刻反應。一般而言，貴金屬(金、銀、鉑)之非常薄的層(10-50nm)以隨機的方式或藉由剝離、蝕刻、雷射等被沉積且結構化。較佳地，貴金屬為金。具體而言，其較佳地可使用在HF/H2O2混合物中的溶液中的金粒子。粒子的大小可為介於5及1000nm之間。藉由金的微影製程、蝕刻或剝離，可得到此結構。另一個選擇為非常細微的非封閉層(5-30nm)的蒸發或陰極噴塗(cathodic pulverisation)(濺鍍)。熱處理將能夠幫助金的區塊(islet)的形成。
當具有貴金屬層的矽被浸入HF/H2O2混合物的水溶液中時，貴金屬局部地催化矽的溶解。此蝕刻溶液一般可包括4ml：1ml：8ml(48% HF：30% H2O2：H2O)和4ml：1ml：40ml(48% HF：30% H2O2：H2O)之間。矽的溶解在金屬的情況下優先被產生，在後的滲透接著逐步地進入到矽當中。根據實質上受到矽晶體的定向、表面沉積、摻雜以及槽的化學反應的影響之擴散模式，此反應可被持續到大的深度(大於100μm)。«MAC-Etch»型的方法具有不需要在槽中的電力供應的優點，同時允許在矽中形成非常大深度(大於100μm)的細孔。因此，其為特別適合一般被用於製造時計部件之以SOI晶圓作為基底的使用。
本領域技術人士熟知上述方法的參數，其為要被實施以使得形成在矽基基底中的細孔具有適當的幾何形狀及大小。
尤其是，細孔較佳地可具有少於或等於100：1的縱橫因子(深度：直徑比率)。特別是，當步驟b)藉由PVD沉積來達成時，矽基基底中的細孔的縱橫因子較佳地為少於或等於4：1。當步驟b)藉由CVD或MOCVD(金屬有機化學氣相沉積，metal organic chemical vapour deposition)沉積來達成時，矽基基底中的細孔的縱橫因子較佳地為少於或等於50：1。
較佳地，細孔可具有大於100μm的深度，較佳地大於200μm的深度，且更佳地大於300μm的深度。
如圖2所示，在矽基基底1中的細孔2的形成超過一定深度導致在細孔2之間之同樣深度的矽基柱3的形成。較佳地，當考量到矽基柱為具有圓形截面時，細孔2被形成為使得矽基柱3的投影表面少於外觀的總表面的79%，為了不具備將會僵化結構之接觸的矽基柱(這對應到滲濾作用(percolation)的臨界值)。
根據本發明的方法之第二步驟b)包括以選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料完全地填充在步驟a)中形成在矽基基底中的細孔，以在細孔中形成厚度至少相當於細孔的深度之材料的層。
此第二步驟b)在步驟a)之後直接被施行，而沒有 任何中間步驟，使得沉積在細孔中的材料直接接觸此等細孔的壁。
較佳地，步驟b)藉由從包含薄膜沉積(例如，化學氣相沉積(chemical vapour deposition，CVD)、物理氣相沉積(physical vapour deposition，PVD)、薄原子層沉積(thin atomic layer deposition，ALD)的方法)及熱氧化(thermal oxidation)的方法之群組中所選出的方法來達成。對於本領域技術人士而言，這些方法為習知的，且在此不需要詳細的資訊。然而，對於PVD沉積而言，可被指定的是，沉積率較佳地將會介於0.1及5nm/s之間。對於藉由CVD或MOCVD的沉積而言，沉積率較佳地將會介於0.01及10nm/s之間。對於藉由ALD的沉積而言，沉積率較佳地將會是0.01nm/s之間。此外，熱氧化對於降低在矽基底中的矽的比例為特別地有利的，矽藉由以層的厚度之約50%的速率之發展而被消耗。因此，本領域技術人士可訂出需要在矽基底中被形成的細孔的尺寸，以允許用二氧化矽取代100%的矽，因而造成在非常短的時間間距內之非常厚一層的二氧化矽的形成。
較佳地，根據本發明的方法在步驟b)之後包括在基底的表面及在被材料填充的細孔的表面形成材料的表面層的步驟c)。具體而言，藉由延長根據步驟b)之材料的沉積以使得不僅細孔2完全地被材料填充而是接著同樣將材料沉積在被材料填充的細孔2上以及柱3上，可得到此表面層，以形成厚度h0之材料的完全層4，如圖3所 示。包括柱3、被材料填充的細孔2以及完全層4之厚度h1的複合層因此被得到。因此，例如，可具有10%的等級之比率h0/h1。
因此，根據本發明的方法使其能夠得到微機械時計零件，其包括基於被沉積的矽/材料之厚複合層，或甚至是當所有的矽都被替代時之被沉積的材料之厚層。
在步驟a)的期間，從基底的表面開始之細孔的形成使得其能夠建立好的皺摺(corrugation)，以建立遠大於不具有細孔的初始表面之實際表面。本領域技術人士可選擇細孔的幾何形狀以及細孔中的材料的沉積時間，以在矽的表面上在相較於在平坦表面上的沉積之大幅減少的時間內製造出厚層。更具體地，本領域技術人士可選擇細孔的幾何形狀及大小，以達到：-在材料的沉積其間，得到完全填充的細孔，-促進氣體的流率，-得到沉積材料層與矽細孔之間的理想體積比率。例如，若必要的話，這能夠製造出具有超過90%的孔隙率(porosity)的多孔矽。
例如，對於特定的沉積方法，像是CVD及PVD，沉積率在細孔的底部被傾斜為較緩慢的。因此，其能夠提供錐形的細孔(在表面較在深處更寬)，以補償與氣體的流率相關聯的此現象。
因此，藉由在細孔中之足夠的氣體供應，根據本發明的方法使其能夠得到複合矽/材料層，其在沉積時間內被 沉積出h1的厚度，沉積時間接近於得到對應於表面層4之厚度h0的材料之完全層所必需的時間。
藉由以CVD形成金剛石的厚層，根據本發明的方法可有利地被實施，用於基於矽的擒縱件的組件(例如，擒縱輪及擒縱叉)的製造。
藉由形成二氧化矽的厚層(若為了二氧化矽的沉積使用藉由熱氧化的方法，其幾乎為固態的)，根據本發明的方法亦可被實施，用於基於矽的擒縱件的組件的製造。
藉由將其與由多孔矽所作成的區域之結構的結合，根據本發明的方法亦可被實施，以快速地建立在矽的深度中具有大的厚度的局部層。
1‧‧‧矽基基底
2‧‧‧細孔
3‧‧‧矽基柱
4‧‧‧完全層
h0‧‧‧厚度
h1‧‧‧厚度

Claims (13)

  1. 一種用於從矽基基底(1)開始製造微機械時計零件的方法，該方法依序包括以下的步驟：a)在該矽基基底(1)的表面的至少一部分的表面上形成確定深度的細孔(2)；b)以選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料完全地填充該等細孔(2)，以在該等細孔(2)中形成厚度至少相當於該等細孔(2)的該深度的該材料的層。
  2. 如申請專利範圍第1項之方法，其包括，在步驟b)之後，以在該矽基基底(1)及填充有該材料的該等細孔(2)的表面上形成該材料的表面層(4)之步驟c)。
  3. 如申請專利範圍第1項之方法，其中，步驟a)係藉由從包含藉由電化學蝕刻的方法、«Stain-etch»型的方法、以及«MAC-Etch»型的方法的群組中所選出的方法來完成。
  4. 如申請專利範圍第3項之方法，其中，步驟a)係藉由«MAC-Etch»型的方法來完成。
  5. 如申請專利範圍第1項之方法，其中，步驟b)係藉由從包含薄膜沉積的方法及熱氧化的方法的群組中所選出的方法來完成。
  6. 如申請專利範圍第1項之方法，其中，該等細孔具有小於或等於100：1的縱橫因子(深度：直徑比率)。
  7. 如申請專利範圍第1項之方法，其中，該等細孔(2)具有大於100μm的深度。
  8. 如申請專利範圍第7項之方法，其中，該等細孔(2)具有大於200μm的深度。
  9. 如申請專利範圍第8項之方法，其中，該等細孔(2)具有大於300μm的深度。
  10. 如申請專利範圍第1項之方法，其中，該矽基基底(1)為矽晶圓或矽晶絕緣體(Silicon-on-Insulator)晶圓。
  11. 一種機械時計零件，其能夠藉由如申請專利範圍第1至10項任一項之方法而被得到。
  12. 一種微機械時計零件，包括矽基基底(1)，該矽基基底(1)在該矽基基底(1)的表面的至少一部分的表面上具有確定深度的細孔(2)，該等細孔(2)被選自金剛石、類鑽碳(DLC)、氧化矽、氮化矽、陶瓷、聚合物及其混合物之材料的層完全地填充，該材料的該層的厚度至少相當於該等細孔(2)的該深度。
  13. 如申請專利範圍第12項之微機械時計零件，其中，該微機械時計零件在該矽基基底(1)及被該材料填充的該等細孔(2)的表面上包括該材料的表面層。
TW105124633A 2015-09-08 2016-08-03 用於製造微機械時計零件的方法及該微機械時計零件 TWI694049B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15184184.8 2015-09-08
EP15184184.8A EP3141519B1 (fr) 2015-09-08 2015-09-08 Procédé de fabrication d'une pièce micromécanique horlogère

Publications (2)

Publication Number Publication Date
TW201722838A true TW201722838A (zh) 2017-07-01
TWI694049B TWI694049B (zh) 2020-05-21

Family

ID=54105640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105124633A TWI694049B (zh) 2015-09-08 2016-08-03 用於製造微機械時計零件的方法及該微機械時計零件

Country Status (7)

Country Link
US (1) US10558169B2 (zh)
EP (1) EP3141519B1 (zh)
JP (1) JP6259502B2 (zh)
KR (1) KR102004591B1 (zh)
CN (1) CN106502080B (zh)
CH (1) CH711498B1 (zh)
TW (1) TWI694049B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4303666A1 (fr) * 2022-07-06 2024-01-10 Association Suisse pour la Recherche Horlogère Composant horloger comprenant un substrat en silicium cristallin et ayant une résistance à la rupture améliorée

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725511A (en) * 1983-08-16 1988-02-16 Reber William L High technology decorative materials for watchfaces and fabrication of same
KR100424772B1 (ko) * 1997-11-14 2004-05-17 삼성전자주식회사 광증폭기시스템
US20090065429A9 (en) * 2001-10-22 2009-03-12 Dickensheets David L Stiffened surface micromachined structures and process for fabricating the same
US7045868B2 (en) * 2003-07-31 2006-05-16 Motorola, Inc. Wafer-level sealed microdevice having trench isolation and methods for making the same
US8339904B2 (en) 2005-06-28 2012-12-25 Eta Sa Manufacture Horlogère Suisse Reinforced micro-mechanical part
DE102006012857A1 (de) * 2006-03-21 2007-09-27 Robert Bosch Gmbh Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur
US8278191B2 (en) * 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
CH701499B1 (fr) * 2009-07-23 2016-09-15 Montres Breguet Sa Procède de fabrication d'une pièce micromécanique en silicium renforcé.
EP2484628A1 (fr) * 2011-02-03 2012-08-08 Nivarox-FAR S.A. Pièce de micromécanique à faible ruguosité de surface
CH704906B1 (fr) * 2011-05-09 2020-06-30 Lvmh Swiss Mft Sa C/O Zenith Succursale De Lvmh Swiss Mft Sa Ressort spiral en silicium pour montre mécanique.
CH705944A2 (fr) * 2011-12-22 2013-06-28 Swatch Group Res & Dev Ltd Procédé de réalisation d'un composant et composant horloger fabriqué par un tel procédé
GB201205178D0 (en) * 2012-03-23 2012-05-09 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
DE102013113380B3 (de) * 2013-11-27 2015-04-09 Damasko Gmbh Verfahren zur herstellung von funktionselementen für mechanische uhrwerke und funktionselement
JP6133767B2 (ja) * 2013-12-26 2017-05-24 シチズン時計株式会社 ひげぜんまい及びその製造方法
EP3141522B1 (fr) * 2015-09-08 2018-05-02 Nivarox-FAR S.A. Pièce micromécanique horlogère comprenant une surface lubrifiée et procédé de réalisation d'une telle pièce micromécanique horlogère
EP3141966B1 (fr) * 2015-09-08 2018-05-09 Nivarox-FAR S.A. Procede de formation d'une surface decorative sur une piece micromecanique horlogere et ladite piece micromecanique horlogere
EP3141520B1 (fr) * 2015-09-08 2018-03-14 Nivarox-FAR S.A. Procédé de fabrication d'une pièce micromécanique horlogère et ladite pièce micromécanique horlogère

Also Published As

Publication number Publication date
EP3141519B1 (fr) 2018-03-14
CH711498A2 (fr) 2017-03-15
US10558169B2 (en) 2020-02-11
KR20170030059A (ko) 2017-03-16
CN106502080B (zh) 2020-05-15
TWI694049B (zh) 2020-05-21
EP3141519A1 (fr) 2017-03-15
JP6259502B2 (ja) 2018-01-10
US20170068215A1 (en) 2017-03-09
CH711498B1 (fr) 2020-03-13
KR102004591B1 (ko) 2019-07-26
CN106502080A (zh) 2017-03-15
JP2017053852A (ja) 2017-03-16

Similar Documents

Publication Publication Date Title
CN106502078B (zh) 制造微机械钟表部件的方法和所述微机械钟表部件
TW201200465A (en) Nano/micro-structure and fabrication method thereof
JP7393120B2 (ja) クロックまたは小型時計部品の製造方法
JP6326462B2 (ja) マイクロメカニカル時計部品の装飾表面を形成する方法及び上記マイクロメカニカル時計部品
TWI694049B (zh) 用於製造微機械時計零件的方法及該微機械時計零件
CN108806819A (zh) 一种x射线波带片的制备方法
JP2014205237A (ja) Ｍｅｍｓ製造のためのエアロゲルベースの型およびその形成方法
TW201719303A (zh) 包括潤滑表面的微機械時計零件及用於製造此微機械時計零件的方法
CN108520791A (zh) 一种x射线波带片及其制备方法
JP3994166B2 (ja) 多溝性表面を有するシリコン基板及びその製造方法
JP4811736B2 (ja) 多溝性表面を有するシリコン基板の製造方法
JPS62291918A (ja) 金属の選択堆積法
TW200920158A (en) A method of manufacturing a perforated micro-electronics diaphragm