CN106486447B - 铜合金接合线 - Google Patents

铜合金接合线 Download PDF

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Publication number
CN106486447B
CN106486447B CN201610390155.XA CN201610390155A CN106486447B CN 106486447 B CN106486447 B CN 106486447B CN 201610390155 A CN201610390155 A CN 201610390155A CN 106486447 B CN106486447 B CN 106486447B
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China
Prior art keywords
copper alloy
bonding wire
wire
bonding
less
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Expired - Fee Related
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CN201610390155.XA
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English (en)
Chinese (zh)
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CN106486447A (zh
Inventor
天野裕之
三苫修一
滨本拓也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Publication of CN106486447A publication Critical patent/CN106486447A/zh
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Publication of CN106486447B publication Critical patent/CN106486447B/zh
Expired - Fee Related legal-status Critical Current
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
CN201610390155.XA 2015-08-28 2016-06-03 铜合金接合线 Expired - Fee Related CN106486447B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-168713 2015-08-28
JP2015168713A JP6410692B2 (ja) 2015-08-28 2015-08-28 銅合金ボンディングワイヤ

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CN106486447A CN106486447A (zh) 2017-03-08
CN106486447B true CN106486447B (zh) 2020-03-03

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JP (1) JP6410692B2 (ja)
CN (1) CN106486447B (ja)
SG (1) SG10201603986XA (ja)
TW (1) TWI714562B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10991672B2 (en) 2017-08-09 2021-04-27 Nippon Steel Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
EP3667709B1 (en) 2017-08-09 2024-05-15 NIPPON STEEL Chemical & Material Co., Ltd. Cu alloy bonding wire for semiconductor device
JP7014003B2 (ja) * 2018-03-28 2022-02-01 住友金属鉱山株式会社 はんだ接合電極およびはんだ接合電極の被膜形成用銅合金ターゲット

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Publication number Priority date Publication date Assignee Title
JP4904252B2 (ja) * 2007-12-03 2012-03-28 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP4617375B2 (ja) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
KR101055957B1 (ko) * 2007-12-03 2011-08-09 가부시키가이샤 닛데쓰 마이크로 메탈 반도체 장치용 본딩 와이어
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
CN102422404B (zh) * 2009-07-30 2015-08-12 新日铁住金高新材料株式会社 半导体用接合线
KR20150040254A (ko) * 2012-07-31 2015-04-14 미쓰비시 마테리알 가부시키가이샤 구리 합금선 및 구리 합금선의 제조 방법
JP5546670B1 (ja) * 2013-06-13 2014-07-09 田中電子工業株式会社 超音波接合用コーティング銅ワイヤの構造

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JP2017045924A (ja) 2017-03-02
CN106486447A (zh) 2017-03-08
TW201709363A (zh) 2017-03-01
TWI714562B (zh) 2021-01-01
SG10201603986XA (en) 2017-03-30
JP6410692B2 (ja) 2018-10-24

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