CN106477591B - 一种pe隔板用二氧化硅的制备方法 - Google Patents
一种pe隔板用二氧化硅的制备方法 Download PDFInfo
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- CN106477591B CN106477591B CN201610867577.1A CN201610867577A CN106477591B CN 106477591 B CN106477591 B CN 106477591B CN 201610867577 A CN201610867577 A CN 201610867577A CN 106477591 B CN106477591 B CN 106477591B
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- silica
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- polyethylene glycol
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/187—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by acidic treatment of silicates
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/16—Pore diameter
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/19—Oil-absorption capacity, e.g. DBP values
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN201610867577.1A CN106477591B (zh) | 2016-09-29 | 2016-09-29 | 一种pe隔板用二氧化硅的制备方法 |
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CN201610867577.1A CN106477591B (zh) | 2016-09-29 | 2016-09-29 | 一种pe隔板用二氧化硅的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN106477591A CN106477591A (zh) | 2017-03-08 |
CN106477591B true CN106477591B (zh) | 2017-12-26 |
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CN201610867577.1A Active CN106477591B (zh) | 2016-09-29 | 2016-09-29 | 一种pe隔板用二氧化硅的制备方法 |
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CN (1) | CN106477591B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107140649B (zh) * | 2017-06-06 | 2019-04-02 | 福建远翔新材料股份有限公司 | 一种pe蓄电池隔膜用二氧化硅的生产方法 |
CN107324346B (zh) * | 2017-07-27 | 2018-08-07 | 广州市飞雪材料科技有限公司 | 一种高比表面积高吸油值二氧化硅的制备方法 |
CN108190893B (zh) * | 2017-12-28 | 2018-10-30 | 广州市飞雪材料科技有限公司 | 一种铅酸蓄电池隔板用二氧化硅的制备方法 |
CN113603104B (zh) * | 2021-08-27 | 2022-04-08 | 金三江(肇庆)硅材料股份有限公司 | 沉淀法制备高吸油值高比表面积的蓄电池用二氧化硅 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19527278A1 (de) * | 1995-07-26 | 1997-01-30 | Degussa | Fällungskieselsäure |
CN101475181A (zh) * | 2008-11-12 | 2009-07-08 | 山西天一纳米材料科技有限公司 | 一种电子级二氧化硅的制备方法 |
CN101613108B (zh) * | 2009-07-10 | 2011-06-08 | 长春理工大学 | 一种二氧化硅超微粉末的制备方法 |
CN101597065B (zh) * | 2009-07-28 | 2011-01-26 | 通化双龙化工股份有限公司 | Pe隔板用白炭黑的制备方法 |
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CP02 | Change in the address of a patent holder |
Address after: 510663 A10, E-PARK Creative Park, yuzhuzhi Valley, 32, Keng Kong Street, Maogang village, Whampoa, Guangzhou, Guangdong Co-patentee after: ZHAOQING JINSANJIANG SILICON MATERIALS CO., LTD. Patentee after: GUANGZHOU FEIXUE MATERIAL TECHNOLOGY CO., LTD. Address before: 510663 South China New Material Innovation Park No. 31 Kefeng Road, Science City, Guangzhou High-tech Industrial Development Zone, Guangdong Province Co-patentee before: ZHAOQING JINSANJIANG SILICON MATERIALS CO., LTD. Patentee before: GUANGZHOU FEIXUE MATERIAL TECHNOLOGY CO., LTD. |
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CP02 | Change in the address of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 510663 A10, E-PARK Creative Park, yuzhuzhi Valley, 32, Keng Kong Street, Maogang village, Whampoa, Guangzhou, Guangdong Co-patentee after: Jinsanjiang (Zhaoqing) silicon material Co.,Ltd. Patentee after: GUANGZHOU FEIXUE MATERIAL TECHNOLOGY Co.,Ltd. Address before: 510663 A10, E-PARK Creative Park, yuzhuzhi Valley, 32, Keng Kong Street, Maogang village, Whampoa, Guangzhou, Guangdong Co-patentee before: ZHAOQING JINSANJIANG SILICON MATERIAL Co.,Ltd. Patentee before: GUANGZHOU FEIXUE MATERIAL TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |