CN106471077A - 粘接膜和使用了粘接膜的半导体封装体 - Google Patents
粘接膜和使用了粘接膜的半导体封装体 Download PDFInfo
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- CN106471077A CN106471077A CN201580033114.9A CN201580033114A CN106471077A CN 106471077 A CN106471077 A CN 106471077A CN 201580033114 A CN201580033114 A CN 201580033114A CN 106471077 A CN106471077 A CN 106471077A
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- Prior art keywords
- adhesive film
- dicing tape
- semiconductor package
- chip
- package body
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Classifications
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Abstract
本发明提供一种可解决拾取不良的问题、并可提高半导体封装体的产率的粘接膜。具体而言,提供一种粘接膜,其特征在于:包含(A)双马来酰亚胺树脂、(B)自由基引发剂、以及(C)具有(甲基)丙烯酰基的偶联剂。另外,提供一种带切割胶带的粘接膜,其特征在于:是在切割胶带上层压上述的粘接膜而形成的。还提供一种使用这样的带切割胶带的粘接膜而形成的半导体封装体。
Description
技术领域
本发明涉及一种粘接膜和使用了该粘接膜的半导体封装体,所述粘接膜的特征在于:通过组合使用双马来酰亚胺树脂和具有甲基丙烯酰基和/或丙烯酰基的偶联剂来实现半导体封装体的高产率。
背景技术
接合性树脂组合物在半导体封装体等微电子器件的制造和组装中被用于各种目的。作为更显著的用途,可以列举:在引线框架或其他基体上接合集成电路芯片这样的电子元件、以及电路封装的接合或在印刷布线板上的安装。在这些接合工序中,接合性树脂组合物在其与被粘体的边界流动使气泡(空隙)不会进入,从而填充在被粘体间,另外,还要求不会因接合工序后的密封或回流焊、安装工序等中的加热而产生空隙。产生了空隙的器件会在上述边界发生剥离,形成在可靠性方面不够充分的状况。另外,当接合不充分时,会发生引线接合不良、或者在密封时密封树脂进入上述边界。
而且,近年来半导体芯片的多段安装或者层压、连接不同的半导体的三维安装非常盛行,随之而来存在半导体制品的受热时间的长时间化的趋势,寻求一种对热历史的耐受性高的高可靠性接合性树脂组合物。针对这样的课题,例如,专利文献1中公开了一种由含缩水甘油基的丙烯酸共聚物和高分子量环氧树脂形成的半导体用粘接膜。
现有技术文献
专利文献
专利文献1:日本特开2010-028087号公报;
专利文献2:日本特开2011-228642号公报
发明内容
发明所要解决的课题
由作为主剂的环氧树脂和固化剂、填充剂、薄片化剂构成的粘接膜,因其必须混合高分子量非交联性聚合物作为薄片化剂,因此无法提高填充剂的含量,为了体现必要的固化物特性(耐热性、吸水性、导热性、导电性等)以确保半导体封装体的可靠性,在材料的设计上存在较多的限制。
另一方面,由作为主剂的双马来酰亚胺树脂和自由基引发剂、填充剂构成的粘接膜,尽管双马来酰亚胺树脂为低聚物,但该粘接膜除了具有双马来酰亚胺树脂所具有的高耐热性和低吸水性以外还具有薄片形成性,因此不需要薄片化剂,可大幅降低粘接膜的树脂成分的粘度,因此具有可显著提高填充剂含量的优点。
由于双马来酰亚胺树脂具有高疏水性,所以缺乏与其他热固化性树脂的相容性,难以调节粘接膜的树脂成分的粘度。因此,无法抑制粘接膜的表面粘性(粘合性),在半导体封装体的制造工序中,在从切割胶带上拾取带粘接膜的硅芯片时,无法从切割胶带上拾取带粘接膜的硅芯片,产生了半导体封装体的产率显著降低的问题。
本申请发明鉴于上述课题而提出,其目的在于:提供一种可解决拾取不良的问题、并可提高半导体封装体的产率的粘接膜。
解决课题的方法
即,本发明涉及一种粘接膜,其特征在于:包含(A)双马来酰亚胺树脂、(B)自由基引发剂、以及(C)具有(甲基)丙烯酸酰基的偶联剂。
本发明还涉及上述的粘接膜,其特征在于:上述(A)双马来酰亚胺树脂的含量为1~50质量%,上述(B)自由基引发剂的含量为0.1~5质量%,上述(C)具有甲基丙烯酰基和/或丙烯酰基的偶联剂的含量为0.1~5质量%。
本发明还涉及一种带切割胶带的粘接膜,其特征在于:是在切割胶带上层压上述粘接膜而形成的。
本发明还涉及一种半导体封装体,该半导体封装体是使用上述带切割胶带的粘接膜而形成的。
发明效果
根据本申请发明,成功地制造了一种可解决拾取不良的问题、并可提高半导体封装体的产率的粘接膜、以及使用了这种粘接膜的可靠性高的半导体封装体。
附图说明
图1是使用本申请发明的接合剂而形成的带切割胶带的粘接膜。
图2是不同于图1的形态的带切割胶带的粘接膜的剖面示意图。
图3是带接合剂层的半导体芯片。
图4是安装在布线基板上的带接合剂层的半导体芯片。
图5是经由接合线安装在布线基板上的带接合剂层的半导体芯片。
图6是挪动半导体芯片并将其层压而得到的带接合剂层的半导体芯片。
图7是加厚图6的接合剂层、并埋入接合线同时进行层压而得到的带接合剂层的半导体芯片。
图8是利用密封树脂将布线基板和带接合剂层的半导体芯片密封而得到的半导体封装体。
图9是剥离强度测定装置。
具体实施方式
((A)双马来酰亚胺树脂)
在本说明书中,“双马来酰亚胺”或“BMI”是指连接有两个马来酰亚胺部分的聚酰亚胺化合物。即,是指具有下述通式(1)所示的一般结构的聚酰亚胺化合物。
通式(1)
[化学式1]
Q为取代或未取代的脂肪族、芳香族、杂芳香族、硅氧烷部位或它们的组合。
而且,Q优选具有碳原子数为5~8的脂环式烃被至少4个碳原子数为4~2的烷基取代了的结构。由于这种结构具有长臂的烷基长链,因此应力缓和效果优异。另外,由于是由脂环族和脂肪族形成的,因此耐湿性优异。
其中,优选例如下述通式(2)所示的、包含环己烷基础的芯和附在芯上的4个长臂的结构(在以下的说明书中记作“C36”)。
通式(2)
[化学式2]
作为本发明所涉及的双马来酰亚胺树脂,可以列举下述通式(3)这样的双马来酰亚胺树脂。
通式(3)
[化学式3]
[化学式4]
[化学式5]
[化学式6]
[化学式7]
[化学式8]
作为其他结构,例如可以列举:US2010/0113643、US2013/0299747中记载的具有本申请规定的结构的马来酰亚胺树脂。但并不限于上述树脂。
作为(A)双马来酰亚胺树脂的含量,优选为粘接膜中的1~50质量%的范围。
((B)自由基聚合引发剂)
作为自由基引发剂,只要是可通过热引发自由基聚合的化合物即可,没有特别限定,可以适当使用以往使用的自由基引发剂。例如可以列举:1,2-二甲基咪唑、2-苯基咪唑、2,6-二甲基吡啶、三乙胺、间羟基苯甲酸、2,4-二羟基苯甲酸、对羟基苯乙酸、4-羟苯基丙酸、过氧化二异丙苯或2,5-二甲基-2,5-二(叔丁基过氧)己炔等过氧化物、2,3-二甲基-2,3-二苯基丁烷、3,4-二甲基-3,4-二苯基己烷等。
为了在实施本发明时使用,所希望的自由基引发剂的1小时半衰期温度优选为140℃以上,更优选为170℃以上,进一步优选为200℃以上。另外,自由基引发剂的1小时半衰期温度优选为250℃以下。
作为(B)自由基聚合引发剂的含量,优选为0.1~5质量%的范围。当自由基引发剂的含量为0.1质量%以上时,聚合反应可充分进行,当其含量为5质量%以下时,可充分抑制由未反应的残留成分引起的拾取成功率等特性的降低。
((C)偶联剂)
在本发明中,偶联剂使粘接膜与被粘体容易接合。其原理如下:(C)偶联剂与作为热固化性树脂而混合的(A)双马来酰亚胺树脂、以及(B)自由基引发剂发生化学反应,在粘接膜相对于硅晶片的低温下的粘合力性不会明显受损的范围内缓慢地进行交联,使其与切割胶带的剥离强度(抗剥强度)降低,从而可以容易地拾取带粘接膜的硅芯片。
尚需说明的是,虽然该效果仅通过具有甲基丙烯酰基和/或丙烯酰基(以下,记作“(甲基)丙烯酰基”)的偶联剂才得以体现,但由于希望在粘接膜相对于硅晶片的低温下的粘合力性不会明显受损的范围内缓慢地进行交联,因此优选具有(甲基)丙烯酰基的偶联剂。
具体而言,可以使用与本发明的其他成分相容的偶联剂。另外,还可以使用参与自由基固化反应的偶联剂。例如可以列举:巯基硅烷系、丙烯酸系、γ-巯基丙基三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-氨基丙基三甲氧基硅烷、以及乙烯基三甲氧基硅烷。可以列举:硅酸酯、金属丙烯酸盐(例如(甲基)丙烯酸铝)、钛酸酯(例如(甲基)丙烯酰氧基乙基乙酰乙酸乙酯三异丙醇钛)、或含有可共聚的基团和螯合配体的化合物(例如膦、硫醇、乙酰乙酸酯和其他的同种化合物)。
在任一个实施方案中,偶联剂具有可共聚的官能团(例如乙烯基、丙烯酰基、甲基丙烯酰基和同种官能团)和硅酸酯官能团两者。当被粘体或后述的填料为金属时,偶联剂的硅酸酯部分可与存在于该金属表面的金属氢氧化物缩合。另一方面,可共聚的官能团可与本发明的粘接膜的其他可反应的成分共聚。
具有(甲基)丙烯酰基的偶联剂可以按0.1质量%~5质量%的范围进行添加,更优选添加0.1~1质量%。当具有(甲基)丙烯酰基的偶联剂的含量为0.1质量%以上时,交联反应可充分进行,当其含量为5质量%以下时,可充分抑制由未反应的残留成分引起的拾取成功率等特性的变化。
(高分子成分)
在本发明中,为了容易形成膜状,可以包含高分子成分。
另外,高分子成分还更有助于应力缓和性。高分子成分只要是容易操作、且与固化性树脂具有适应性的高分子成分即可。作为优选的高分子成分的例子,可以列举呈疏水性且可溶于甲苯的热塑性树脂。与固化性树脂具有适应性时,考虑到热塑性树脂和固化性树脂两者均可溶于相同溶剂的情形,作为这样的溶剂,例如可以列举芳香族溶剂。作为有效溶剂的例子,可以列举甲苯和二甲苯。
作为呈疏水性且可溶于甲苯的热塑性树脂,例如有苯乙烯丁二烯的嵌段共聚物、苯乙烯异戊二烯嵌段共聚物、苯乙烯丁二烯异戊二烯的混合物的嵌段共聚物。对本发明有用的苯乙烯丁二烯的嵌段共聚物可以是二嵌段共聚物,具有彼此进行共价键合的苯乙烯聚合物的链段和丁二烯聚合物的链段。对本发明有用的苯乙烯丁二烯的嵌段共聚物可以是三嵌段共聚物,具有苯乙烯聚合物的两个链段和丁二烯聚合物的一个链段,苯乙烯聚合物的各链段与丁二烯聚合物的链段进行共价键合。
对本发明有用的追加的苯乙烯丁二烯的嵌段共聚物可以是丁二烯链段被氢化了的苯乙烯丁二烯的嵌段共聚物。另外,还可以是具有苯乙烯聚合物链段、丁二烯聚合物链段和甲基丙烯酸酯聚合物链段的三嵌段共聚物。除苯乙烯嵌段共聚物以外,还优选聚酰胺酸、聚酰胺酸酯、聚酰胺酸酰胺等聚酰亚胺前体、聚THF、羧基末端丁二烯丙烯腈橡胶、聚丙二醇。而且,只要是苯氧基、丙烯酸橡胶、聚酰亚胺、聚酰胺、聚丙烯酸酯、聚醚、聚砜、聚乙烯、聚丙烯、聚硅氧烷、聚乙酸乙烯酯/聚乙烯酯、聚烯烃、聚氰基丙烯酸酯等与固化性树脂具有适应性的高分子成分,均可适当使用。另外,包含具备反应性双键的聚合物链段的热塑性树脂在被自由基活化的固化过程中可与固化性树脂反应。
在高分子成分的重均分子量为10,000以上时,薄膜形成的容易性优异。另外,在重均分子量为1,000,000以下时,耐湿性、以及在被粘体上贴合薄膜时的流动性优异,重均分子量更优选为200,000以下,进一步优选为100,000以下。重均分子量可以通过凝胶渗透层析(GPC)来测定(基于标准聚苯乙烯换算)。在特定的实施方式中,以薄膜中的树脂成分的总质量为基准,在高分子成分的配比为5质量%以上时,薄膜形成的容易性优异。另外,在高分子成分的配比为50质量%以下时,耐湿性、以及在被粘体上贴合薄膜时的流动性优异,高分子成分的配比更优选为40质量%以下,进一步优选为30质量%以下。
((A)以外的任意的固化性成分)
在本发明中,可以含有双马来酰亚胺树脂以外的固化性成分。固化性成分没有特别限定。例如可以列举:分子内具有酰胺键的(甲基)丙烯酸酯化合物、酸改性(甲基)丙烯酸酯、双酚A系(甲基)丙烯酸酯、使α,β-不饱和羧酸与多元醇反应而得到的化合物、使α,β-不饱和羧酸与含缩水甘油基的化合物反应而得到的化合物、分子内具有氨酯键的(甲基)丙烯酸酯化合物等氨酯单体、或氨酯低聚物,除此以外,还可以例示:壬基苯氧基聚氧乙烯丙烯酸酯、γ-氯-β-羟丙基-β’-(甲基)丙烯酰氧基乙基邻苯二甲酸酯、β-羟基烷基-β’-(甲基)丙烯酰氧基烷基邻苯二甲酸酯等邻苯二甲酸系化合物、(甲基)丙烯酸烷基酯、EO改性壬基苯基(甲基)丙烯酸酯等。
在一个实施方案中,可以使用具有异氰尿酸酯环的化合物。在另一实施方案中,可以使用具有四氢呋喃结构的化合物。这些化合物可以单独使用,也可以组合两种以上进行使用。在特定的实施方式中,以薄膜中的树脂成分的总质量为基准,当固化性树脂以外的固化性成分的配比为2质量%以上时,在提高将薄膜贴合于被粘体时的流动性或固化性方面优异。另外,从薄膜的应力缓和性方面考虑,固化性树脂以外的固化性成分的配比优选为50质量%以下。
(填料)
本发明中可以含有填料。通过加入填料,可以对粘接膜赋予相应于填料的功能。另一方面,在未加入填料时,在薄膜的应力缓和性和流动性高的方面优异。填料包括有机填料、无机填料或金属填料。在可以对薄膜赋予韧性方面优选有机填料,例如可以列举:丙烯酸、聚酰亚胺、聚酰胺酰亚胺、聚醚醚酮、聚醚酰亚胺、聚酯酰亚胺、尼龙、有机硅等填料。无机填料或金属填料可以提高可操作性、提高导热性、赋予导电性、调节熔融粘度和赋予触变性等。金属填料没有特别限定,例如可以使用金、银、铜、铝、铁、铟、锡等以及它们的合金等。无机填料没有特别限定,例如可以列举:氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶性二氧化硅等,填料的形状也没有特别限定。这些填料可以单独使用或者组合两种以上进行使用。
从调节熔融粘度或赋予耐热性的目的考虑,优选氧化铝、二氧化硅、氢氧化铝等,从广泛应用性方面考虑,更优选二氧化硅。在可以制成较薄的粘接膜、还可以以高比例含有填料方面,二氧化硅优选为球状二氧化硅。
(助熔剂)
在填料具有导电性的情况下,优选粘接膜含有助熔剂。助熔剂起到除去导电性填料的表面氧化膜的作用。作为助熔剂,只要是不妨碍固化性树脂或其他固化性树脂的固化反应的化合物即可,可以无特别限制地进行使用。例如可以列举:多元醇、羧酸、无机酸、烷醇胺类、酚类、松香、氯化物及其盐、卤化物及其盐等。助熔剂可以只使用一种,也可以组合两种以上进行使用。
在特定的实施方式中,助熔剂可以包含羧酸与叔胺的盐或混合物而构成、且具有潜在性。在其他实施方式中,可以在粘接膜的热处理结束时将助熔剂钝化,这种情况下,助熔剂的官能团与固化性树脂反应而嵌入,从而被钝化。
(其他任意成分)
在另一实施方案中,本发明的粘接膜可以还包含例如增塑剂、油、稳定化剂、抗氧化剂、防腐蚀剂、抑制剂、螯合剂、颜料、染料、高分子添加剂、消泡剂、防腐剂、增稠剂、流变调节剂、保湿剂、粘合性赋予剂、分散剂和水等的一种以上的添加剂。
(粘接膜的制造方法)
本发明的粘接膜可以如下制造:通过将(A)双马来酰亚胺树脂、(B)自由基引发剂、(C)具有甲基丙烯酰基和/或丙烯酰基的偶联剂在溶剂(例如二甲苯、环戊酮等)中溶解、均匀分散而得到接合剂组合物清漆,将所得清漆涂布在覆盖膜上使达到规定厚度而形成涂膜,之后在规定条件下干燥该涂膜,从而可以制造粘接膜。涂布方法没有特别限定,例如可以列举辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,例如可以在干燥温度70~160℃、干燥时间1~5分钟的范围内进行。作为覆盖膜,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或通过氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行了表面包覆的塑料薄膜或纸等。
粘接膜的厚度没有特别限定,优选为1~300μm,在接合被粘体彼此之间的层间时,粘接膜的厚度优选为5~60μm,在要求应力缓和性时,粘接膜的厚度优选为60~200μm。
另外,上述的粘接膜通过以层压于切割胶带上的形式组合,可适合用作带切割胶带的粘接膜。切割胶带主要是指在利用切割刀片切削晶片而切下形成于硅晶片上的集成电路或封装等并进行单片化的工序中使用的胶带。
由于粘接膜呈自由基固化性,因此可以将其与对贴附晶片的部分事先进行了放射线照射的具有放射线固化型粘合剂层或压敏型粘合剂层的切割胶带组合。
图1是本发明的一实施方式所涉及的带切割胶带的粘接膜的剖面示意图。
图1中显示了在切割胶带11上层压有粘接膜105的带切割胶带的粘接膜10的结构。切割胶带11是在基材101上层压粘合剂层103而构成的,粘接膜105设在其粘合剂层103上。如图2所示的带切割胶带的粘接膜12所示,可以是仅在工件贴附部分形成有粘接膜3’的构成。
上述基材1成为带切割胶带的粘接膜10的强度母体,优选为具有紫外线透过性的基材、在膨胀后具有扩张性的基材。例如可以列举:聚乙烯、聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃;乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯;聚碳酸酯、聚酰亚胺、聚醚醚酮、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳纶(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素系树脂、有机硅树脂、上述树脂的交联体、金属(箔)、纸等。
为了提高密合性、保持性等,可以对基材101的表面实施惯用的表面处理、例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化放射线处理等化学或物理处理、底涂料(例如后述的粘合物质)的涂敷处理。
基材101可以适当选择同种或不同种的基材进行使用,根据需要,可以使用多种基材混合而成的混合物。另外,还可以使用层压有不同种的层的基材。
基材101的厚度没有特别限定,通常为50~200μm左右。
用于形成粘合剂层103的粘合剂没有特别限定,例如可以使用丙烯酸系粘合剂、橡胶系粘合剂等普通的压敏性接合剂。
作为用于形成粘合剂层103的粘合剂,还可以使用放射线固化型粘合剂。放射线固化型粘合剂通过紫外线等放射线的照射而使交联度增大,可以容易地降低其粘合力。
放射线固化型粘合剂可以无特别限制地使用具有碳-碳双键等放射线固化性官能团、并且显示出粘合性的物质。例如可以例示:在上述丙烯酸系粘合剂、橡胶系粘合剂等普通的压敏性粘合剂中混合了放射线固化性单体成分或低聚物成分的添加型放射线固化型粘合剂。
作为混合的放射线固化性单体成分,例如可以列举:氨酯低聚物、氨酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,作为放射线固化性低聚物成分,可以列举氨酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各种低聚物,其分子量在100~30000左右范围的低聚物适合。放射线固化性的单体成分或低聚物成分的配合量可以根据上述粘合剂层的种类来适当确定。通常,相对于100质量份的构成粘合剂的丙烯酸系聚合物等基础聚合物,所述配合量例如为5~500质量份、优选为40~150质量份左右。
另外,作为放射线固化型粘合剂,除上述说明的添加型放射线固化型粘合剂以外,还可以列举:使用了在聚合物侧链或主链中或主链末端具有碳-碳双键的聚合物作为基础聚合物的内源型放射线固化型粘合剂。由于内源型放射线固化型粘合剂无需含有或者不会大量含有作为低分子成分的低聚物成分等,所以低聚物成分等不会随时间在粘合剂中移动或者向粘接膜3中移动,因此优选。
另外,作为放射线固化型粘合剂,例如可以列举:日本特开昭60-196956号公报中公开的、含有具有两个以上不饱和键的加聚性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐系化合物等光聚合引发剂的橡胶系粘合剂或丙烯酸酯系粘合剂等。
粘合剂层103的厚度没有特别限定,优选为1~50μm左右。优选2~30μm,进一步优选5~25μm。
图1是简洁地例示使用了这种带切割胶带的粘接膜的半导体装置的构成、制造方法的图。
具体而言,在带切割薄膜的粘接膜10中的粘接膜105的半导体晶片贴附部分上压合半导体晶片4,使其保持接合进行固定(贴附工序)。本工序利用压辊等挤压装置一边挤压一边来进行。
<半导体封装体的制造方法>
参照附图,对本发明的半导体封装体制造方法的优选实施方式进行详细说明。需要说明的是,在以下的说明和附图中,相同或相当的要素带有相同的符号,省略重复的说明。图3~图9是显示本发明的半导体封装体制造方法的各工序的一个优选实施方式的概略纵剖面图。
在本发明的半导体封装体制造方法中,首先,作为第1工序,如图2所示,将上述本发明的粘接膜热压合在表面形成有至少1个半导体电路的晶片1的背面以设置接合剂层2,然后,经由接合剂层2设置晶片1和切割胶带3。此时,可以暂且对接合剂层2与切割胶带3一体化了的制品进行热压合。作为晶片1,可以适当使用表面形成有至少1个半导体电路的晶片,例如可以列举硅晶片、SiC晶片、GaS晶片。作为接合剂层2,可以单独使用一层上述本发明的粘接膜,也可以将两层以上层压后使用。作为在晶片1的背面设置这样的接合剂层2的方法,可以适当采用可在晶片1的背面层压上述粘接膜的方法,可以列举下述方法等:在晶片1的背面贴合上述粘接膜后将两层以上层压时,依次层压粘接膜直至达到所期望的厚度的方法;或者,预先将粘接膜层压成目标厚度,之后将其贴合在晶片1的背面。另外,在晶片1的背面设置这样的接合剂层2时使用的装置没有特别限定,例如可以适当使用辊式层压机、手动层压机这样的公知的装置。
然后,在本发明的半导体封装体的制造方法中,作为第2工序,如图3所示,通过同时切割半导体芯片4和接合剂层2,得到具备半导体芯片4和接合剂层2的带接合剂层的半导体芯片5。切割胶带3没有特别限定,可以适当使用公知的切割胶带。而且,用于切割的装置也没有特别限定,可以适当使用公知的切割装置。
需要说明的是,将晶片1细切而获得的芯片另称为芯片4。
然后,在本发明的半导体封装体的制造方法中,作为第3工序,如图4所示,从切割胶带3上拾取接合剂层2,将带接合剂层的半导体芯片5和布线基板6经由接合剂层2进行热压合,在布线基板6上安装带接合剂层的半导体芯片5。作为布线基板6,可以适当使用表面形成有半导体电路的基板,例如可以列举:印刷电路基板(PCB)、各种引线框架、以及在基板表面搭载有电阻元件或电容器等电子部件的基板。
在本发明中,成分(C)与成分(A)和成分(B)进行化学反应,在不会明显损及接合剂层2与晶片1的粘合性的范围内缓慢地进行交联,由此使得接合剂层2与切割胶带3之间的剥离强度降低,从而可以容易地拾取带接合剂层的半导体芯片4,而不会发生DAF的残留(拾取后,从晶片1上剥离的接合层2残留在切割胶带3上的现象)。
在这样的布线基板6上安装带接合剂层的半导体芯片5的方法没有特别限定,可适当采用利用接合剂层2可以将带接合剂层的半导体芯片5接合在搭载于布线基板6或布线基板6的表面上的电子部件上的现有方法。作为这样的安装方法,可以列举:采用使用了具有从上部加热功能的倒装贴片机的安装技术的方法、使用具有仅从下部加热功能的贴片机的方法、使用层压机的方法等以往公知的加热、加压方法。
如上所述,经由由本发明的膜状接合剂构成的接合剂层2将带接合剂层的半导体芯片5安装在布线基板6上,从而可以使上述膜状接合剂追踪因电子部件产生的布线基板5上的凹凸,因此可以使晶片1与布线基板6密合固定。
接下来,在本发明的半导体封装体的制造方法中,作为第4工序,使上述粘接膜热固化。作为上述热固化的温度,只要在上述粘接膜的热固化起始温度以上即可,没有特别限定,根据所用树脂的种类而不同,不能一概而论,例如优选为100~180℃,从在更高温度下固化时可以在短时间内固化的角度考虑,更优选为140~180℃。若温度低于热固化起始温度,则热固化无法充分进行,接合剂层2的强度处于下降趋势,另一方面,若温度超过上述上限,则在固化过程中膜状接合剂中的添加剂等挥发,存在容易起泡的趋势。另外,作为上述固化处理的时间,例如优选为10~120分钟。
然后,在本发明的半导体封装体的制造方法中,如图5所示,优选经由接合线7连接布线基板6和带接合剂层的半导体芯片5。对这样的连接方法没有特别限定,可以适当采用以往公知的方法、例如引线接合方式、TAB(Tape Automated Bonding,胶带自动接合)方式等。
另外,还可以在所搭载的半导体芯片4表面热压合其他的半导体芯片4并进行热固化,再次通过引线接合方式与布线基板连接,从而层压多个芯片。例如有下述方法等:如图6所示,挪动半导体芯片并进行层压;或者,如图7所示,使第2层的接合剂层2变厚,边埋入接合线7边进行层压。
在本发明的半导体封装体的制造方法中,如图8所示,优选利用密封树脂8密封布线基板6和带接合剂层的半导体芯片5,如此操作,可以得到半导体封装体9。密封树脂8没有特别限定,可以适当使用可用于制造半导体封装体的公知的密封树脂。另外,利用密封树脂8进行的密封方法也没有特别限定,可适当采用公知的方法。
实施例
下面,通过实施例来具体说明本发明,但本发明并不受该实施例的任何限定。
[实施例、比较例]
对表2所示的各成分配合适量的溶剂以得到清漆,将所得清漆涂布在由50μm厚的PET膜构成的盖带上进行干燥,形成厚度为50μm的膜状接合剂组合物,之后将其与切割胶带贴合,制备了带切割胶带的粘接膜。
需要说明的是,各性能的评价方法如下。
(切割胶带与粘接膜间的剥离强度测定)
根据JIS-Z0237测定了各样品中的切割胶带与粘接膜间的剥离强度。在标准状态(温度为23℃、相对湿度50%)下,在图9所示的滑动板201上经由固定用双面胶103贴合粘接膜105,用上部卡盘203固定切割胶带11的顶端部,之后以剥离角度90°、剥离速度50mm/min进行剥离,求出了切割胶带与粘接膜间的剥离强度。
(拾取成功率和可进行晶片层合的最低温度)
使用贴片装置(日立HITEC公司制造、商品名DB-800),在顶针数为5根、上推高度为300μm、上推后保持时间为300毫秒的条件下拾取已切割成7.5×7.5mm的带粘接膜的硅芯片100次,算出了拾取成功率。另外,关于可进行晶片层合的最低温度,首先,使用手动晶片贴膜机(テクノビジョン公司制造、商品名FM-114),在预先加热至规定温度的镜面晶片(8英寸×730μm厚)的表面以辊压0.3MPa、辊速10mm/秒层合已被剪切成20×100mm的粘接膜。冷却后,在室温下剥离粘接膜表面的覆盖膜,注意不要混入气泡,同时将粘接膜与相同尺寸的粘合带(寺冈制作所公司制造、商品名Splicing tape No.642)贴合,在剥离粘合带时,求出粘接膜不会从镜面晶片表面剥离的温度作为可进行晶片层合的最低温度。尚需说明的是,温度是指层合时的镜面晶片表面的实测温度,将其每变更10℃,求出粘接膜不会从镜面晶片表面剥离的最低温度。根据表1的基准判定这些结果。
[表1]
拾取成功率判定
A:(良好)拾取成功率为80%以上
B:(可以)拾取成功率为50%以上且小于80%
C:(不可以)拾取成功率小于50%
可进行晶片层合的最低温度
A:(良好)可进行晶片层合的最低温度低于80℃
B:(可以)可进行晶片层合的最低温度为80℃以上且低于110℃
C:(不可以)可进行晶片层合的最低温度为110℃以上
另外,使用的各成分和切割胶带的细节如下。
(1)绝缘性粒子:
球状二氧化硅(デンカ公司制造、商品名FB-3SDX、平均粒径为3μm)
(2)导电性粒子:
球状铜粉(Ormet公司制造、商品名F2020、平均粒径为3μm)与球状焊锡粉(三井金属矿业公司制造、商品名ST-3、平均粒径为3μm)的混合物
(3)双马来酰亚胺树脂:
满足下述化学式4的结构(n=1~20)、凝胶状。
[化学式9]
(4)自由基引发剂
二甲基二苯基丁酮(日本油脂制造、商品名ノフマーBC-90、10小时半衰期温度为210℃)
(5)偶联剂:
甲基丙烯酰氧基硅烷(信越有机硅公司制造、商品名KBM-503、化学名为3-甲基丙烯酰氧基丙基三甲氧基硅烷)
丙烯酰氧基硅烷(信越有机硅公司制造、商品名KBM-5103、化学名为3-丙烯酰氧基丙基三甲氧基硅烷)
环氧基硅烷(信越有机硅公司制造、商品名KBM-403、化学名为3-缩水甘油氧基丙基三甲氧基硅烷)
氨基硅烷(信越有机硅公司制造、商品名KBM-573化学名为正苯基-3-氨基丙基三甲氧基硅烷)
(6)切割胶带:
通过以下的方法制造的切割胶带。
<粘合膜的制造方法>
(粘合剂层组合物)
将77质量份的丙烯酸2-乙基己酯、23质量份的丙烯酸2-羟丙酯聚合,在重均分子量为80万的丙烯酸共聚物中加入3重量份作为固化剂的聚异氰酸酯并进行混合,形成了粘合剂层组合物。
(切割胶带)
将所制作的粘合剂层组合物涂布在形成脱模薄膜的PET膜上使干燥膜厚达到10μm,在120℃下干燥3分钟。将该PET膜上所涂布的粘合剂层组合物转印到作为支撑基材的厚100μm的聚丙烯-弹性体(PP:HSBR=80:20的弹性体)树脂薄膜上,从而制作了DC带。
需要说明的是,聚丙烯(PP)使用了日本Polychem株式会社制造的Novatec FG4(商品名),氢化苯乙烯丁二烯(HSBR)使用了JSR株式会社制造的DYNARON 1320P(商品名)。另外,PET膜使用进行了有机硅脱模处理的PET膜(帝人:ビューレックスS-314(商品名)、厚度为25μm)。
[表2]
实施例1~4中显示出了高的拾取成功率。特别是,实施例2通过适量添加丙烯酰氧基硅烷系偶联剂使化学反应适度进行,从而显示出优异的拾取性,而不会明显损及在硅晶片上的低温贴合性。
另外,在为了体现粘接膜的功能而大幅提高了填充剂含量的实施例4中,通过适量添加丙烯酰氧基硅烷系偶联剂,也确认到了与实施例2同样显著的效果。
符号说明
101:基材
103:粘合剂层
105:粘接膜(热固化型粘接膜)
1:半导体晶片
2:接合剂层
3:切割胶带
4:半导体芯片
5:带接合剂层的半导体芯片
6:布线基板
7:接合线
8:密封树脂
9:半导体封装体
10:带切割胶带的粘接膜
11:切割膜
201:滑动板
203:上部卡盘
Claims (4)
1.一种粘接膜,其特征在于:包含(A)双马来酰亚胺树脂、(B)自由基引发剂、以及(C)具有(甲基)丙烯酰基的偶联剂。
2.根据权利要求1所述的粘接膜,其特征在于:粘接膜中的(A)双马来酰亚胺树脂的含量为1~50质量%,所述(B)自由基引发剂的含量为0.1~5质量%,所述(C)具有甲基丙烯酰基和/或丙烯酰基的偶联剂的含量为0.1~5质量%。
3.一种带切割胶带的粘接膜,其特征在于:是在切割胶带上层压权利要求1或2所述的粘接膜而形成的。
4.一种半导体封装体,所述半导体封装体是使用权利要求1~3中任一项所述的带切割胶带的粘接膜而形成的。
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KR101974257B1 (ko) | 2019-04-30 |
SG11201608083QA (en) | 2016-11-29 |
WO2016031553A1 (ja) | 2016-03-03 |
US20170152408A1 (en) | 2017-06-01 |
PT3187557T (pt) | 2023-12-19 |
EP3187557A4 (en) | 2018-04-18 |
JPWO2016031553A1 (ja) | 2017-04-27 |
PH12017500374B1 (en) | 2017-07-17 |
CN106471077B (zh) | 2020-02-28 |
EP3187557B1 (en) | 2023-09-13 |
US10115707B2 (en) | 2018-10-30 |
JP6395730B2 (ja) | 2018-09-26 |
EP3187557A1 (en) | 2017-07-05 |
KR20170002514A (ko) | 2017-01-06 |
MY179367A (en) | 2020-11-05 |
PH12017500374A1 (en) | 2017-07-17 |
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