CN112566997A - 黏合剂组合物及半导体装置的制造方法 - Google Patents
黏合剂组合物及半导体装置的制造方法 Download PDFInfo
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- CN112566997A CN112566997A CN201880096632.9A CN201880096632A CN112566997A CN 112566997 A CN112566997 A CN 112566997A CN 201880096632 A CN201880096632 A CN 201880096632A CN 112566997 A CN112566997 A CN 112566997A
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Abstract
本发明公开一种黏合剂组合物,其含有树脂成分、热交联剂及固化剂,且树脂成分包含具有马来酰亚胺基的树脂。
Description
技术领域
本发明涉及一种黏合剂(adhesive)组合物及半导体装置的制造方法。
背景技术
以往,在将半导体芯片(chip)与基板连接时,广泛地应用使用金导线(wire)等金属细线的打线接合(wire bonding)方式。另一方面,为了应对针对半导体装置的高功能化、高集成化、高速化等要求,在半导体芯片或基板上形成称为凸块(bump)的导电性突起而在半导体芯片与基板之间直接连接的倒装芯片方式(FC连接方式)正在推广。
作为倒装芯片方式,例如已知有使用焊料、锡、金、银、铜等进行金属接合的方法、施加超声波振动而进行金属接合的方法、利用树脂的收缩力来保持机械接触的方法等。这些中,就连接部的可靠性的观点而言,倒装芯片方式通常为使用焊料、锡、金、银、铜等进行金属接合的方法。
并且,在半导体芯片与基板的连接中,BGA(Ball Grid Array:球栅阵列)、CSP(Chip Size Package:芯片尺寸封装)等中积极使用的COB(Chip On Board:板上芯片)型连接方式也是倒装芯片方式。倒装芯片方式也广泛用于在半导体芯片上形成凸块或配线而在半导体芯片彼此之间连接的COC(Chip On Chip:堆叠芯片)型的连接方式(例如,参考专利文献1)。
在CPU(中央处理器)、MPU(微处理器)等中所使用的区域阵列型的半导体封装中,强烈要求高功能化。作为具体的要求,可列举:半导体芯片的大型化、针(凸块、配线)数的增加、间距及间隙的高密度化等。
在强烈要求进一步的小型化、薄型化或高功能化的半导体封装中,将上述连接方式进行层叠化或多级化的芯片堆叠(chip stack)型封装、POP(Package On Package:封装堆叠封装)、TSV(Through-Silicon Via:硅穿孔)等也开始广泛普及。这种层叠化或多级化技术对半导体芯片等进行三维配置,因此与二维地配置的技术相比能够缩小半导体封装。并且,这种技术在半导体的性能提高、杂讯的减少、安装面积的削减、省电力化等方面也有效,因此作为下一代的半导体配线技术而受到瞩目。这些技术在半导体的性能提高、杂讯的减少、安装面积的削减、省电力化等方面也有效,作为下一代的半导体配线技术而受到瞩目。
以往技术文献
专利文献
专利文献1:日本专利公开2008-294382号公报
发明内容
发明要解决的技术课题
在半导体封装中,随着高功能化、高集成化、高速化等的推进,需要配线之间的窄间距化及微细配线化。但是,在窄间距化及微细配线化正在发展的半导体封装中,由于所使用的黏合剂材料,电能变成热而损失成为课题。特别是在需要高频信号的半导体封装中,能量损失变大,低效化变得显著。作为表示电能损失程度的指标,已知有介质损耗角正切(DF值)。为了抑制由电能的热引起的损失,重要的是降低黏合剂材料的介质损耗角正切(DF值)。
因此,本发明的主要目的在于提供一种能够充分降低介质损耗角正切(DF值)的黏合剂组合物。
用于解决技术课题的手段
本发明的一方面在于提供一种黏合剂组合物,其含有树脂成分、热交联剂及固化剂,且树脂成分包含具有马来酰亚胺基的树脂。这种黏合剂组合物能够充分降低介质损耗角正切(DF值)。
热交联剂可包含丙烯酸树脂。丙烯酸树脂可在25℃下为固体。
固化剂可包含热自由基产生剂。热自由基产生剂可为有机过氧化物。
黏合剂组合物可为膜状。另外,在本说明书中,有时将膜状的黏合剂组合物称为“膜状黏合剂”。
黏合剂组合物可用于半导体装置的制造。本发明进而也可以是有关于一种将组合物作为用于半导体装置的制造的黏合剂的应用或用于制造黏合剂的应用,所述组合物含有树脂成分、热交联剂及固化剂,树脂成分包含具有马来酰亚胺基的树脂。
黏合剂组合物在半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的制造方法中可用于连接部的密封。本发明进而也可以是有关于一种在半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的制造方法中,将组合物作为用于连接部的密封的黏合剂的应用或用于制造黏合剂的应用,所述组合物含有树脂成分、热交联剂及固化剂,树脂成分包含具有马来酰亚胺基的树脂。
在另一方面,本发明提供一种半导体装置的制造方法,其为制造半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的方法,所述半导体装置的制造方法包括:使用上述黏合剂组合物对连接部的至少一部分进行密封的工序。
发明效果
根据本发明,能够提供一种能够充分降低介质损耗角正切(DF值)的黏合剂组合物。并且,根据本发明,能够提供一种使用这种黏合剂组合物的半导体装置的制造方法。使用这种黏合剂组合物的半导体装置的耐回焊性优异。
附图说明
图1是表示半导体装置的一实施方式的示意剖视图。
图2是表示半导体装置的另一实施方式的示意剖视图。
图3是表示半导体装置的另一实施方式的示意剖视图。
图4是示意性表示半导体装置的制造方法的一实施方式的工序剖视图。
具体实施方式
以下,视情况参考附图对本发明的优选实施方式进行详细说明。另外,附图中,对相同或相当部分标注相同符号,省略重复说明。并且,上下左右等位置关系只要无特别说明,则视为基于附图所示的位置关系。进而,附图的尺寸比率不限于图示的比率。
[黏合剂组合物]
本实施方式所涉及的黏合剂组合物含有树脂成分(以下,有时称为“(a)成分”)、热交联剂(以下,有时称为“(b)成分”)及固化剂(以下,有时称为“(c)成分”)。本实施方式所涉及的黏合剂组合物为热固性,经过半固化(B阶段)状态,在固化处理之后可成为完全固化物(C阶段)状态。
<(a)成分:树脂成分>
(a)成分优选为重均分子量10000以上的成分。(a)成分包含具有马来酰亚胺基的树脂(以下,有时称为“(a1)成分”)。通过(a)成分包含(a1)成分,在所获得的黏合剂组合物的固化物中能够降低介质损耗角正切(DF值)。
((a1)成分:具有马来酰亚胺基的树脂)
(a1)成分只要是具有马来酰亚胺基的树脂,则并无特别限制。(a1)成分的重均分子量优选为10000以上。(a1)成分例如可为具有至少两个马来酰亚胺基与二价烃基的树脂(以下,有时将该树脂称为“双马来酰亚胺树脂”)。
双马来酰亚胺树脂具有两个下述式(III)所表示的马来酰亚胺基。
[化学式1]
双马来酰亚胺树脂例如为下述式(IV)所表示的树脂成分。
[化学式2]
式(IV)中,X表示包含二价烃基的二价连结基。
X所表示的连结基中所含的二价烃基也可为饱和烃基及不饱和烃基中的任一种。二价烃基也可为链状及环状中的任一种,链状的二价烃基也可为直链状及分支状中的任一种。环状的不饱和烃基可为芳香族烃基。二价连结基也可包含两种以上的这些二价烃基。
二价烃基能够提高黏合剂组合物的挠性、以及由黏合剂组合物制作的膜状黏合剂的操作性(粘性、裂纹、掉粉等)及强度,因此优选为包含链状烃基,更优选为包含具有碳原子数4以上的主链的链状亚烷基。
具有碳原子数4以上的主链的链状亚烷基由-(CRaRb)m-表示(m表示4以上的整数,Ra及Rb分别独立地表示氢原子或碳原子数小于m的烷基)。该亚烷基的主链的碳原子数(m)可为4以上或6以上,且可为20以下、15以下或10以下。
就容易对双马来酰亚胺树脂的分子结构进行三维化、使聚合物的自由体积增大而加以低密度化、即能够进行低介电常数化的观点而言,二价烃基的碳原子数可为8以上、10以上或15以上,且可为300以下、250以下、200以下、100以下、70以下或50以下。就相同的观点而言,二价烃基的碳原子数也可为8~300、8~250、8~200或8~100。二价烃基也可为碳原子数8~300、8~250、8~200或8~100的可具有分支的亚烷基、碳原子数10~70的可具有分支的亚烷基、或者碳原子数15~50的可具有分支的亚烷基。
在一实施方式中,就更有效地提高高频特性的观点而言,二价烃基包含下述式(II)所表示的基团。
[化学式3]
式(II)中,R2及R3分别独立地表示亚烷基,R4及R5分别独立地表示烷基。
就柔软性的进一步提高及合成的容易性的观点而言,R2及R3所表示的亚烷基的碳原子数可为4~50、5~25、6~10或7~10。R2及R3所表示的亚烷基也可为上述具有碳原子数4以上的主链的链状亚烷基。
就柔软性的进一步提高及合成的容易性的观点而言,R4所表示的烷基的碳原子数可为4~50、5~25、6~10或7~10。就柔软性的进一步提高及合成的容易性的观点而言,R5所表示的烷基的碳原子数可为2~50、3~25、4~10或5~8。
就更有效地提高高频特性及伸长率的观点而言,双马来酰亚胺树脂也可具有多个二价烃基。在该情况下,多个二价烃基相互可相同也可不同。双马来酰亚胺树脂也可具有2个~40个、2个~20个或2个~10个二价烃基。
二价烃基例如也可为:亚壬基、亚癸基、亚十一烷基、亚十二烷基、亚十四烷基、亚十六烷基、亚十八烷基、亚十九烷基、亚二十烷基、亚二十一烷基、亚二十二烷基、亚二十三烷基、亚二十四烷基、亚二十五烷基、亚二十六烷基、亚二十七烷基、亚二十八烷基、亚二十九烷基、亚三十烷基等亚烷基;亚苄基、亚苯基、亚萘基等亚芳基;亚苯基亚甲基、亚苯基亚乙基、苄基亚丙基、亚萘基亚甲基、亚萘基亚乙基等亚芳基亚烷基;亚苯基二亚甲基、亚苯基二亚乙基等亚芳基二亚烷基等。
X所表示的连结基可仅包含上述二价烃基,也可除了上述二价烃基以外还包含其他有机基团。作为其他有机基团,例如可列举具有至少两个酰亚胺键的二价有机基团。
具有至少两个酰亚胺键的二价有机基团例如可为下述式(I)所表示的基团。
[化学式4]
式(I)中,R1表示四价有机基团。
就操作性的观点而言,R1所表示的四价有机基团例如可为烃基。该烃基的碳原子数例如可为1~100、2~50或4~30。
该烃基也可具有取代基,例如也可包含经取代或未经取代的硅氧烷基。作为硅氧烷基,例如可列举源自二甲基硅氧烷、甲基苯基硅氧烷、二苯基硅氧烷等的基团。
取代基例如也可为烷基、烯基、炔基、羟基、烷氧基、巯基、环烷基、取代环烷基、杂环基、取代杂环基、芳基、取代芳基、杂芳基、取代杂芳基、芳氧基、取代芳氧基、卤素原子、卤代烷基、氰基、硝基、亚硝基、氨基、酰胺基、-C(=O)H、-C(=O)-、-S-、-S(=O)2-、-OC(=O)-O-、-C(=O)-NRc、-NRcC(=O)-N(Rc)2、-OC(=O)-N(Rc)2、酰基、氧酰基、羧基、氨基甲酸酯基、磺酰基、磺酰胺基、硫酰基等。此处,Rc表示氢原子或烷基。这些取代基能够根据目的、用途等来选择一种或两种以上。
R1所表示的四价有机基团例如也可为从苯等芳香族烃去除四个氢原子而成的四价芳香族烃基或从环己烷等脂环式烃去除四个氢原子而成的四价脂环式烃基。就高频特性优异的观点而言,R1所表示的四价有机基团可为四价芳香族烃基,也可为从苯去除四个氢原子而成的四价基团。
具有至少两个酰亚胺键的二价有机基团可为下述式(V)所表示的基团。
[化学式5]
就介电特性优异的观点而言,具有至少两个酰亚胺键的二价有机基团也可为下述式(VI)或式(VII)所表示的基团。
[化学式6]
[化学式7]
就高频特性优异、黏合剂组合物进而含有其他树脂时与其他树脂的相容性优异的观点而言,双马来酰亚胺树脂也可具有多个具有至少两个酰亚胺键的二价有机基团。在该情况下,多个该二价有机基团相互可相同也可不同。双马来酰亚胺树脂也可具有2个~40个、2个~20个或2个~10个该二价有机基团。
在一实施方式中,双马来酰亚胺树脂例如可为下述式(VIII)所表示的双马来酰亚胺树脂,可为下述式(IX)所表示的双马来酰亚胺树脂。
[化学式8]
[化学式9]
式(VIII)及式(IX)中,Z1、Z2及Z3分别独立地表示上述二价烃基,R1的含义与式(I)中的R1相同,n表示1~10的整数。在n为2以上的情况下,多个Z3相互可相同也可不同。
作为式(IX)所表示的双马来酰亚胺树脂的具体例,可列举下述式(A)所表示的双马来酰亚胺树脂等。另外,式(A)所表示的双马来酰亚胺树脂可为n为1~10的混合物。
[化学式10]
(a1)成分的重均分子量(Mw)优选为10000以上。就对具有凸块、焊盘等突起物的半导体晶圆、芯片、基板等的层压性及抑制孔隙产生的观点而言,(a1)成分的重均分子量(Mw)可为12000以上、14000以上或16000以上,且可为100000以下、50000以下或20000以下。
在本说明书中,重均分子量(Mw)是指利用凝胶渗透色谱(GPC)法并使用利用标准聚苯乙烯而得的标准曲线的聚苯乙烯换算值。
就对具有凸块、焊盘等突起物的半导体晶圆、芯片、基板等的层压性及抑制孔隙产生的观点而言,(a1)成分的玻璃转移点(Tg)可为160℃以下、140℃以下、120℃以下或100℃以下。就膜形成性及膜操作性(膜粘性)的观点而言,具有马来酰亚胺基的树脂的玻璃转移点(Tg)可为40℃以上、50℃以上或60℃以上。此处的玻璃转移点(Tg)是使用差示扫描量热仪(DSC)(日本珀金埃尔默(Perkin Elmer Japan)股份有限公司制造,DSC-7型),在(a1)成分10mg、升温速度10℃/分钟、空气气氛下的条件下进行测定。
(a1)成分也可单独使用一种具有马来酰亚胺基的树脂,例如也可将重均分子量等性状不同的两种以上的具有马来酰亚胺基的树脂组合而使用。
以(a)成分总量为基准,(a1)成分的含量可为60质量%以上、70质量%以上、80质量%以上、90质量%以上或95质量%以上。以(a)成分总量为基准,(a1)成分的含量可为60质量%~100质量%、70质量%~100质量%、80质量%~100质量%、90质量%~100质量%或95质量%~100质量%以上。
就赋予耐热性、提高膜形成性的观点而言,在不阻碍本发明的效果的范围内,(a)成分也可包含不具有马来酰亚胺基的树脂(以下,有时称为“(a2)成分”)。
((a2)成分:不具有马来酰亚胺基的树脂)
(a2)成分只要是不具有马来酰亚胺基的树脂,则并无特别限制,但优选为重均分子量为10000以上。作为(a2)成分,例如可列举:环氧树脂、苯氧基树脂、聚酰亚胺树脂、聚酰胺树脂、聚碳二酰亚胺树脂、氰酸酯树脂、丙烯酸树脂、聚酯树脂、聚乙烯树脂、聚醚砜树脂、聚醚酰亚胺树脂、聚乙烯缩醛树脂、聚氨酯树脂、丙烯酸橡胶等。这些也可单独使用一种或者将两种以上组合而使用。这些中,就耐热性及膜形成性更优异而言,(a2)成分也可包含环氧树脂、苯氧基树脂、聚酰亚胺树脂、丙烯酸树脂或丙烯酸橡胶。
在(a)成分包含(a2)成分的情况下,以(a)成分总量为基准,(a2)成分的含量可为40质量%以下、30质量%以下、20质量%以下、10质量%以下或5质量%以下。
以(a)成分及(b)成分的总量100质量份为基准,(a)成分((a1)成分及(a2)成分)的含量可为30质量份~75质量份或40质量份~70质量份。以(a)成分及(b)成分的总量100质量份为基准,若(a)成分的含量为30质量份以上,则在膜形成性及操作性的方面有更优异的倾向。以(a)成分及(b)成分的总量100质量份为基准,若(a)成分的含量为75质量份以下,则有能够更充分地防止由固化物性的降低引起的可靠性降低的倾向。
((b)成分:热交联剂)
(b)成分可为热固性树脂。(b)成分优选为重均分子量小于10000的成分。通过使重均分子量小于10000的(b)成分与后述的(c)成分反应,有黏合剂组合物的固化性得到提高的倾向。
作为(b)成分,例如可列举丙烯酸树脂、环氧树脂等。在(a1)成分为重均分子量10000以上的具有马来酰亚胺基的树脂的情况下,重均分子量小于10000的具有马来酰亚胺基的树脂也可作为热交联剂发挥作用。这些中,(b)成分也可包含丙烯酸树脂。
丙烯酸树脂只要是在分子内具有一个以上的(甲基)丙烯酰基的丙烯酸树脂,则并无特别限制。作为丙烯酸树脂,例如可列举:双酚A型、双酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、联苯型、三苯基甲烷型、二环戊二烯型、芴型、金刚烷型、各种多官能丙烯酸树脂等。这些也可单独使用一种或者将两种以上组合而使用。另外,在本说明书中,“(甲基)丙烯酰基”是指丙烯酰基或甲基丙烯酰基中的任一个,其他类似表达也相同。
丙烯酸树脂可在室温(25℃)下为固体。与液态相比,固体更不易产生孔隙,固化前的B阶段状态的黏合剂组合物的粘性(tack)小,因此有操作优异(容易形成为膜状)的倾向。丙烯酸树脂例如可为在室温(25℃)下为固体的芴型丙烯酸树脂。
丙烯酸树脂所具有的官能团((甲基)丙烯酰基)的数量可为每1分子3个以下,且可为2个或3个。若官能团的数量为每1分子3个以下,则充分进行短时间内的固化,固化反应率得到提高(由于固化的网络适度地进行,因此有能够抑制未反应基残存的倾向)。
环氧树脂只要是在分子内具有两个以上环氧基的环氧树脂,则并无特别限制。作为环氧树脂,例如可列举:双酚A型、双酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、联苯型、三苯基甲烷型、二环戊二烯型、各种多官能环氧树脂等。这些也可单独使用一种或者将两种以上组合而使用。
(b)成分相对于(a)成分的质量比((b)成分的质量/(a)成分的质量)并无特别限制,但可为0.01~10、0.05~5或0.1~5。若(b)成分相对于(a)成分的质量比为0.01以上,则有固化性提高、黏合力(bond force)进一步提高的倾向,若为10以下,则有膜形成性更优异的倾向。
((c)成分:固化剂)
(c)成分只要是主要作为(b)成分的固化剂发挥作用的成分,则并无特别限制。作为(c)成分,例如可列举热自由基产生剂(通过热而产生自由基的化合物)、光自由基产生剂(通过光而产生自由基的化合物)等。这些中,就操作性的观点而言,(c)成分也可包含热自由基产生剂。
作为热自由基产生剂,例如可列举有机过氧化物、偶氮化合物等。这些中,就操作性及保存稳定性的观点而言,热自由基产生剂可为有机过氧化物。
作为有机过氧化物,例如可列举:过氧化酮、过氧化缩酮、氢过氧化物、二烷基过氧化物、二酰基过氧化物、过氧化二碳酸酯、过氧化酯等。这些也可单独使用一种或者将两种以上组合而使用。就保存稳定性的观点而言,有机过氧化物可为氢过氧化物、二烷基过氧化物或过氧化酯。进而,就耐热性的观点而言,有机过氧化物可为氢过氧化物或二烷基过氧化物。作为二烷基过氧化物,例如可列举二枯基过氧化物、二-叔丁基过氧化物等。
在(b)成分包含环氧树脂的情况下,(c)成分例如也可为苯酚酚醛清漆、甲酚酚醛清漆、苯酚芳烷基树脂等酚醛树脂系固化剂,甲基环己烷四羧酸二酐、偏苯三甲酸酐、均苯四甲酸酐等酸酐系固化剂,二氰二胺等胺系固化剂,2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑等咪唑系固化剂,三苯基膦、四苯基鏻四苯基硼酸盐、四苯基鏻四(4-甲基苯基)硼酸盐等膦系固化剂等。
以(b)成分的总质量为基准,(c)成分的含量可为0.5质量%~10质量%或1质量%~5质量%。若(c)成分的含量为0.5质量%以上,则有固化充分进行的倾向,若(c)成分的含量为10质量%以下,则有如下倾向:能够抑制固化急剧地进行而反应点变多,从而分子链变短、或者未反应基残存。
黏合剂组合物也可进而含有助熔剂(以下,有时称为“(d)成分”)、填料(以下,有时称为“(e)成分”)等。
((d)成分:助熔剂)
(d)成分为显示出助熔活性(去除氧化物及杂质的活性)的化合物。作为(d)成分,例如可列举咪唑类、胺类等具有未共享电子对的含氮化合物、羧酸类、酚类、醇类等。这些也可单独使用一种或者将两种以上组合而使用。这些中,由于助熔剂强烈地显现出助熔活性,连接性得到提高,因此可为羧酸类。羧酸类可为单羧酸(具有一个羧基的化合物)、二羧酸(具有两个羧基的化合物)或具有三个以上羧基的化合物。这些中,羧酸类可为戊二酸等二羧酸。
相对于(a)成分及(b)成分的总量100质量份,(d)成分的含量可为0.5质量份~10质量份或1质量份~7质量份。若(d)成分的含量相对于(a)成分及(b)成分的总量100质量份为0.5质量份以上,则有更容易充分显现出助熔活性的倾向。若(d)成分的含量相对于(a)成分及(b)成分的总量100质量份为10质量份以下,则有能够更充分地防止可靠性降低的倾向。
((e)成分:填料)
能够通过(e)成分来控制黏合剂组合物的粘度、黏合剂组合物的固化物的物性等。更具体而言,能够实现抑制连接时的孔隙产生、降低黏合剂组合物的固化物的吸湿率等。作为(e)成分,例如可列举无机填料、树脂填料、晶须等。这些也可单独使用一种或者将两种以上组合而使用。(e)成分可为绝缘性。
作为无机填料,例如可列举:玻璃、二氧化硅、氧化铝、氧化钛、炭黑、云母、氮化硼等。这些中,无机填料可为二氧化硅、氧化铝、氧化钛或氮化硼,可为二氧化硅、氧化铝或氮化硼。与后述的树脂填料相比,无机填料的热膨胀率小,因此能够实现黏合剂组合物的低热膨胀率化。并且,无机填料中多为通用品且进行了粒径控制的无机填料,因此就粘度调整的方面而言也优选。
作为树脂填料,例如可列举包含聚氨基甲酸酯、聚酰亚胺等树脂的填料等。与有机成分(树脂成分、热交联剂、固化剂等)相比,树脂填料的热膨胀率小,因此连接可靠性的提高效果优异。并且,通过使用树脂填料,能够容易地进行黏合剂组合物的粘度调整。并且,与无机填料相比,树脂填料有缓和应力的功能优异的倾向。
作为晶须,例如可列举:硼酸铝、钛酸铝、氧化锌、硅酸钙、硫酸镁、氮化硼等。
这些中,(e)成分可为无机填料或树脂填料。(e)成分可根据用途而使用任一个,也可将两者混合而使用。
就提高分散性及黏合力的观点而言,(e)成分也可利用表面处理剂实施表面处理。表面处理剂例如可为硅烷偶联剂。作为硅烷偶联剂的官能团,例如可列举:缩水甘油基(环氧基)、氨基、苯基、苯基氨基、(甲基)丙烯酰基、乙烯基等。就分散性、流动性及黏合力的观点而言,硅烷偶联剂的官能团可为缩水甘油基、苯基氨基或(甲基)丙烯酰基,就保存稳定性的观点而言,可为苯基或(甲基)丙烯酰基。
就防止倒装芯片时的咬入的观点而言,填料的平均粒径可为1.5μm以下,就可视性(透明性)的观点而言,可为1.0μm以下。
相对于(a)成分及(b)成分的总量100质量份,(e)成分的含量可为10质量份~400质量份或40质量份~150质量份。若(e)成分的含量相对于(a)成分及(b)成分的总量100质量份为10质量份以上,则有膜形成性及固化物性(热膨胀率等)进一步提高的倾向。若(e)成分的含量相对于(a)成分及(b)成分的总量100质量份为400质量份以下,则有能够更充分地防止由树脂流动性的降低等引起的孔隙等不良的产生的倾向。
黏合剂组合物也可进而含有离子捕捉剂、抗氧化剂、硅烷偶联剂、钛偶联剂、均化剂、离子捕集剂等添加剂。这些也可单独使用一种或者将两种以上组合而使用。这些的含量能够在显现出各添加剂的效果的范围来适宜设定。
将黏合剂组合物在200℃下保持5秒钟时的固化反应率可为50%以上、80%以上或90%以上。200℃是与焊料熔融温度相比更低的温度。若固化反应率为50%以上,则即便在与焊料熔融温度相比更高的温度下进行连接时,也能够防止焊料飞散或流动而导致连接可靠性降低。固化反应率能够通过对放入至铝盘中的未处理及热处理之后(在200℃下保持5秒之后)的黏合剂组合物10mg,进行使用DSC(珀金埃尔默(Perkin Elmer)公司制造的DSC-7型)且升温速度20℃/分钟、30℃~300℃的温度范围的差示扫描量热测定来求出。关于固化反应率,例如能够在差示扫描量热测定中,将未处理的样品的固化反应产生的发热量ΔH(J/g)设为“ΔH1”,将在加热板上以200℃保持5秒钟之后的样品的固化反应产生的发热量ΔH(J/g)设为“ΔH2”,利用以下的式子来计算出固化反应率。
固化反应率(%)=(ΔH1-ΔH2)/ΔH1×100
本实施方式所涉及的黏合剂组合物也可用作以有机溶剂稀释之后的黏合剂清漆。作为有机溶剂,例如可列举:甲苯、二甲苯、均三甲苯、枯烯、对异丙基甲苯等芳香族烃;己烷、庚烷等脂肪族烃;甲基环己烷等环状烷烃;四氢呋喃、1,4-二恶烷等环状醚;丙酮、甲基乙基酮、甲基异丁基酮、环己酮、4-羟基-4-甲基-2-戊酮等酮;乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁内酯等酯;碳酸亚乙酯、碳酸亚丙酯等碳酸酯;N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基-2-吡咯烷酮等酰胺等。这些也可单独使用一种或者将两种以上组合而使用。这些中,就溶解性及沸点的观点而言,有机溶剂也可为甲苯、二甲苯、甲基乙基酮、甲基异丁基酮或环己烷。
以黏合剂清漆的总质量为基准,黏合剂清漆中的固体成分浓度可为10质量%~80质量%。
黏合剂清漆能够通过将(a)成分、(b)成分、(c)成分、其他成分及添加剂、以及有机溶剂加以混合、混炼来制备。混合及混炼能够适宜地组合通常的搅拌机、磨碎机、三辊、球磨机、珠磨机等分散机来进行。并且,在制备黏合剂清漆之后,可通过真空脱气等去除黏合剂清漆中的气泡。
黏合剂组合物可为膜状(膜状黏合剂)。膜状黏合剂可为半固化(B阶段)状态。这种膜状黏合剂能够通过将黏合剂组合物涂布于基材膜上来形成。在使用黏合剂清漆的情况下,能够通过将黏合剂清漆涂布于支撑膜上,对有机溶剂进行加热干燥并去除,来形成膜状黏合剂。
作为基材膜,只要是可耐受使有机溶剂挥发时的加热条件者的基材膜,则并无特别限制,例如可列举:聚酯膜、聚丙烯膜、聚对苯二甲酸乙二酯膜、聚酰亚胺膜、聚醚酰亚胺膜、聚醚萘二甲酸酯膜、聚甲基戊烯膜等。在这些膜中,基材膜可为仅包含一种的单层膜,也可为包含两种以上的膜的多层膜。
作为将黏合剂清漆涂布于基材膜上的方法,能够使用公知的方法,例如可列举:刮刀涂布法、辊涂法、喷涂法、凹版涂布法、棒涂法、幕涂法等。有机溶剂的加热干燥的条件只要是所使用的有机溶剂充分挥发的条件,则并无特别限制,例如可为温度50℃~200℃、时间0.1分钟~90分钟。若在安装之后对孔隙或粘度调整并无影响,则优选为挥发至膜状黏合剂中的有机溶剂的残存率达到1.5质量%以下为止。
膜状黏合剂的厚度能够根据用途来适宜调整。膜状黏合剂的厚度根据半导体封装的凸块的高度等适宜设定。
本实施方式所涉及的黏合剂组合物能够在200℃以上的高温下进行压接。并且,本实施方式所涉及的黏合剂组合物在使焊料等金属熔融而形成连接的倒装芯片封装中,显现出更优异的固化性。
本实施方式所涉及的黏合剂组合物能够优选地用于半导体装置的制造。本实施方式所涉及的黏合剂组合物特别是在半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的制造方法中,能够优选地用于连接部的密封。
[半导体装置]
以下对使用本实施方式所涉及的黏合剂组合物而制造的半导体装置进行说明。本实施方式所涉及的半导体装置的连接部可为凸块与配线的金属接合及凸块与凸块的金属接合中的任一种。在本实施方式所涉及的半导体装置中,例如能够采用经由黏合剂组合物而获得电连接的倒装芯片。
图1是表示半导体装置的一实施方式(半导体芯片及配线电路基板的COB型的连接方式)的示意剖视图。图1(a)所示的半导体装置100具备:半导体芯片1及基板2(配线电路基板)、以及介隔存在于这些之间的黏合剂层40。在半导体装置100的情况下,半导体芯片1具有:半导体芯片主体10、配置于半导体芯片主体10的基板2侧的面上的配线15、以及配置于配线15上的作为连接部的连接凸块30。基板2具有:基板主体20、以及配置于基板主体20的半导体芯片1侧的面上的作为连接部的配线16。半导体芯片1的连接凸块30与基板2的配线16通过金属接合而进行电连接。半导体芯片1及基板2通过配线16及连接凸块30而进行倒装芯片。配线15、配线16及连接凸块30通过利用黏合剂层40加以密封而与外部环境阻隔。黏合剂层40可为本实施方式所涉及的黏合剂组合物的固化物。
图1(b)所示的半导体装置200具备:半导体芯片1、基板2、以及介隔存在于这些之间的黏合剂层40。在半导体装置200的情况下,半导体芯片1具有配置于半导体芯片1的基板2侧的面上的连接凸块32作为连接部。基板2具有配置于基板主体20的半导体芯片1侧的面上的连接凸块33作为连接部。半导体芯片1的连接凸块32与基板2的连接凸块33通过金属接合而进行电连接。半导体芯片1及基板2通过连接凸块32、连接凸块33而进行倒装芯片。连接凸块32、连接凸块33通过利用黏合剂层40加以密封而与外部环境阻隔。黏合剂层40可为本实施方式所涉及的黏合剂组合物的固化物。
图2(a)所示的半导体装置300的结构是经由配线15及连接凸块30将两个半导体芯片1倒装芯片,除此以外,与半导体装置100相同。图2(b)所示的半导体装置400的结构是经由连接凸块32将两个半导体芯片1倒装芯片,除此以外,与半导体装置200相同。
半导体芯片主体10并无特别限制,能够使用由硅、锗等同一种类的元素构成的元素半导体;砷化镓、磷化铟等化合物半导体等各种半导体。
作为基板2,只要是配线电路基板,则并无特别限制,能够使用:将设置于以玻璃环氧、聚酰亚胺、聚酯、陶瓷、环氧、双马来酰亚胺三嗪等作为主要成分的绝缘基板的表面的金属层的不需要的部位蚀刻去除而设置配线(配线图案)的电路基板;在上述绝缘基板的表面通过金属镀敷等而设置配线(配线图案)的电路基板;在上述绝缘基板的表面印刷导电性物质而设置配线(配线图案)的电路基板等。
作为配线15及配线16、连接凸块30、连接凸块32及连接凸块33等连接部的材质,可列举金、银、铜、焊料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等作为主成分。连接部可仅由单一的成分构成,也可由多个成分构成。连接部也可具有将这些金属层叠而成的结构。就相对廉价而言,连接部的金属材料也可为铜或焊料。就连接可靠性的提高及翘曲抑制的观点而言,连接部也可包含焊料。
也可在配线15、配线16(配线图案)的表面上形成有以金、银、铜、焊料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜)、锡、镍等作为主成分的金属层。金属层可仅由单一的成分构成,也可由多个成分构成。金属层也可具有将多个金属层层叠而成的结构。金属层也可包含相对廉价的铜或焊料。就连接可靠性的提高及翘曲抑制的观点而言,金属层也可包含焊料。
也可将图1或图2所示的半导体装置(封装)层叠,通过金、银、铜、焊料(主成分例如为锡-银、锡-铅、锡-铋、锡-铜、锡-银-铜)、锡、镍等进行电连接。用于进行连接的金属可为相对廉价的铜或焊料。电连接例如在TSV技术中所见那样,也可通过将黏合剂层介于半导体芯片之间,进行倒装芯片或层叠,形成贯穿半导体芯片的孔,并与图案面的电极连接来进行。
图3是表示半导体装置的另一实施方式(半导体芯片层叠型的方式(TSV))的示意剖视图。在图3所示的半导体装置500中,将设置于作为基板的中介层(interposer)主体50上的配线15与半导体芯片1的连接凸块30连接,由此将半导体芯片1与中介层5倒装芯片。在半导体芯片1与中介层5之间介隔存在有黏合剂层40。在上述半导体芯片1的与中介层5相反的一侧的表面上,经由配线15、连接凸块30及黏合剂层40而反复层叠有半导体芯片1。半导体芯片1的正反面的图案面的配线15是通过填充于贯穿半导体芯片主体10内部的孔内的贯穿电极34而相互连接。作为贯穿电极34的材质,例如能够使用铜、铝等。黏合剂层40可为本实施方式所涉及的黏合剂组合物的固化物。
通过这种TSV技术,也能够从通常不会使用的半导体芯片的背面获取信号。进而,因在半导体芯片1内垂直地插通贯穿电极34,因此能够缩短相向的半导体芯片1彼此之间、以及半导体芯片1及中介层5之间的距离而进行柔软的连接。在这种TSV技术中,黏合剂层40能够应用为相向的半导体芯片1彼此之间、以及半导体芯片1及中介层5之间的密封材料。
并且,在区域凸块芯片技术等自由度高的凸块形成方法中,能够不经由中介层而将半导体芯片直接安装于母板(mother board)上。本实施方式所涉及的黏合剂组合物也能够应用于这种将半导体芯片直接安装于母板上的情况。另外,在将两个配线电路基板层叠的情况下,将基板之间的空隙密封时也能够应用本实施方式所涉及的黏合剂组合物。
[半导体装置的制造方法]
本实施方式的半导体装置的制造方法为制造半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的方法,且包括:使用本实施方式所涉及的黏合剂组合物对连接部的至少一部分进行密封的工序。
以下,使用图4对本实施方式的半导体装置的制造方法进行说明。图4是示意性表示半导体装置的制造方法的一实施方式的工序剖视图。
首先,如图4(a)所示,在具备配线16与基板主体20的基板2上,形成在形成有连接凸块30的位置具有开口部的阻焊剂60。并非必须设置该阻焊剂60,但通过在基板2上设置阻焊剂,能够抑制配线之间的桥接的产生,从而使连接可靠性及绝缘可靠性提高。阻焊剂60例如能够使用市售的封装用阻焊剂油墨来形成。作为市售的封装用阻焊剂油墨,具体而言可列举SR系列(日立化成股份有限公司,商品名)、PSR4000-AUS系列(太阳油墨制造股份有限公司,商品名)等。
接下来,如图4(a)所示,在阻焊剂60的开口部形成连接凸块30。然后,如图4(b)所示,在设置有连接凸块30及阻焊剂60的基板2上,例如贴附膜状黏合剂41。膜状黏合剂41的贴附能够通过加热压制、辊层压、真空层压等来进行。膜状黏合剂41的供给面积及厚度是根据后述的半导体芯片1及基板2的尺寸、以及连接凸块30的高度而适宜设定。
如上所述,将膜状黏合剂41贴附于基板2之后,使用倒装焊接机等连接装置对具备配线15与半导体芯片主体10的半导体芯片的配线15与连接凸块30进行对位。接着,对半导体芯片1与基板2以连接凸块30的熔点以上的温度进行加热并且进行压接,从而如图4(c)所示那样能够获得如下半导体装置600,即,将半导体芯片1与基板2连接,并且通过作为膜状黏合剂41的固化物的黏合剂层40对半导体芯片1及基板2之间的空隙进行密封。
在本实施方式的半导体装置的制造方法中,也可在对位之后进行临时固定(经由膜状黏合剂的状态),并利用回焊炉进行加热处理,由此使连接凸块30熔融而将半导体芯片1与基板2连接。因在临时固定的阶段中并非必须形成金属接合,因此与上述进行加热并且压接的方法相比,可进行低负荷、短时间、低温度下的压接,生产率提高,并且能够抑制连接部的劣化。
并且,也可在将半导体芯片1与基板2连接之后利用烘箱等进行加热处理,从而进一步提高连接可靠性及绝缘可靠性。加热温度只要是膜状黏合剂进行固化的温度,则并无特别限制,也可为完全固化的温度。加热温度、加热时间等加热条件可适宜设定。
在本实施方式的半导体装置的制造方法中,也可在将膜状黏合剂41贴附于半导体芯片1之后连接基板2。并且,也可在通过连接凸块30将半导体芯片1的配线15及基板2的配线16连接之后,将黏合剂组合物填充于半导体芯片1及基板2间的空隙中并加以固化。
就生产率提高的观点而言,也可在将黏合剂组合物供给至连结有多个半导体芯片1的半导体晶圆之后进行切晶而加以单片化,由此获得在半导体芯片1上供给有黏合剂组合物的结构体。并且,在黏合剂组合物为膏状的情况下并无特别限制,只要通过旋涂等涂布方法将半导体芯片1上的配线或凸块填埋而使厚度均匀化即可。该情况下,树脂的供给量恒定,因此生产率提高,并且能够抑制因填埋不足而引起的孔隙的产生及切晶性的降低。另一方面,在黏合剂组合物为膜状的情况下并无特别限制,只要通过加热压制、辊层压及真空层压等贴附方式,以填埋半导体芯片1上的配线或凸块的方式供给膜状的黏合剂组合物即可。该情况下,树脂的供给量恒定,因此生产率提高,能够抑制因填埋不足而引起的孔隙的产生及切晶性的降低。
与对膏状的黏合剂组合物进行旋涂的方法相比,根据对膜状的黏合剂组合物进行层压的方法,有供给之后的黏合剂组合物的平坦性变得良好的倾向。因此,作为黏合剂组合物的形态,优选为膜状。并且,膜状黏合剂在各种工艺中的应用性、操作性等也优异。
并且,在通过对膜状黏合剂进行层压而供给黏合剂组合物的方法中,有更容易确保半导体装置的连接性的倾向。
连接负荷可考虑连接凸块30的数量及高度的偏差、因加压而产生的连接凸块30或承接连接部的凸块的配线的变形量来设定。关于连接温度,连接部的温度可为连接凸块30的熔点以上,但只要是可形成各个连接部(凸块或配线)的金属接合的温度即可。在连接凸块30为焊料凸块的情况下,连接温度可为约240℃以上。
连接时的连接时间根据连接部的构成金属而不同,但就生产率提高的观点而言,优选为时间短。在连接凸块30为焊料凸块的情况下,连接时间可为20秒以下、10秒以下或5秒以下。在铜-铜或铜-金的金属连接的情况下,连接时间可为60秒以下。
实施例
以下,列举实施例对本发明更具体地进行说明。其中,本发明并不限定于这些实施例。
实施例及比较例中使用的成分为如下。
(a)树脂成分
(a1)具有马来酰亚胺基的树脂
SFR2300(商品名)(上述式(A)所表示的双马来酰亚胺树脂(n=1~10的混合物),日立化成股份有限公司,玻璃转移点(Tg):75℃~80℃,重均分子量(Mw):约17000)
(a2)不具有马来酰亚胺基的树脂
FX293(商品名)(苯氧基树脂,新日化环氧制造股份有限公司,玻璃转移点(Tg):约163℃,重均分子量(Mw):约44000)
(b)热交联剂
EA0200(商品名)(具有芴骨架的芴型丙烯酸树脂,25℃下为固体,大阪燃气化学股份有限公司,官能团数:2)
(c)固化剂
帕库米卢(Percumyl)D(商品名)(二枯基过氧化物,日油股份有限公司)
(d)助熔剂
戊二酸(日本西格玛奥德里奇(sigma aldrich Japan)合同公司,熔点:约98℃)
(e)填料
SE2050(商品名)(二氧化硅填料(无机填料),雅都玛(Admatechs)股份有限公司,平均粒径:0.5μm)
YA050C-SM(商品名)(甲基丙烯酸表面处理纳米二氧化硅填料(无机填料),雅都玛(Admatechs)股份有限公司,平均粒径:50nm)
EXL-2655(商品名)(核壳型有机微粒子(树脂填料),日本罗门哈斯(Rohm andHaas Japan)股份有限公司)
<膜状黏合剂的制作>
(实施例1)
向珠磨机(行星式微粉碎机,日本弗里茨(Fritsch Japan)股份有限公司,商品名:P-7)的容器中装入热交联剂(EA0200)30质量份、助熔剂(戊二酸)0.5质量份、无机填料(SE2050及YA050C-SM)75质量份(SE2050:30质量份,YA050C-SM:45质量份)、树脂填料(EXL-2655)10质量份及环己酮(固体成分量为60质量%的量),进而加入了与固体成分相同质量的直径1.0mm的珠粒及直径2.0mm的珠粒。将其利用珠磨机搅拌了30分钟。之后,加入具有马来酰亚胺基的树脂成分(SFR2300)30质量份,利用珠磨机进而搅拌30分钟。之后,加入固化剂(帕库米卢(Percumyl)D)0.5质量份,利用珠磨机进行搅拌,通过过滤去除用于搅拌的珠粒,由此获得了黏合剂清漆。
利用小型精密涂敷装置(康井精机股份有限公司)将所获得的黏合剂清漆涂敷于基材膜(实施了脱模处理的聚酯膜,帝人薄膜溶液股份有限公司,商品名:普雷克斯(Purex)A53)上,使用清洁烘箱(爱斯佩克(ESPEC)股份有限公司)在100℃下干燥5分钟,从而获得了实施例1的膜状黏合剂。
(实施例2及比较例1)
将所使用的成分的组成变更为表1所示那样,除此以外,以与实施例1相同的方式获得了实施例2及比较例1的膜状黏合剂。
<介质损耗角正切(DF值)的测定>
通过将实施例及比较例中制作的膜状黏合剂在175℃下加热2小时而使其固化,制作了规定尺寸(100mm(纵)×100mm(横)×200μm(厚))的测定样品。使用SPDR介质谐振器(安捷伦科技(Agilent Technologies)股份有限公司),以频率10GHz对测定样品的介质损耗角正切(DF值)进行了测定。将结果示于表1。
<半导体装置的制作>
将实施例及比较例中制作的膜状黏合剂剪切成规定尺寸(7.3mm(纵)×7.3mm(横)×0.045mm(厚)),使用真空层压机(日矿材料(Nikko-materials)股份有限公司,商品名:V-130),在层压温度80℃、层压压力0.5MPa、层压时间60秒下将经剪切的膜状黏合剂层压于带焊料凸块的半导体芯片(芯片尺寸:7.3mm(纵)×7.3mm(横)×0.05mm(厚),凸块高度(铜柱与焊料的合计高度):约45μm,凸块数:1048针,间距:80μm,瓦茨(WALTS)股份有限公司,商品名:WALTS-TEG CC80)上。之后,使用倒装安装装置(松下(Panasonic)股份有限公司,商品名:FCB3)将层压有膜状黏合剂的带焊料凸块的半导体芯片中的膜状黏合剂安装于半导体芯片(芯片尺寸:10mm×10mm×0.1mm,连接部金属:Ni/Au,瓦茨(WALTS)股份有限公司,商品名:WALTS-TEG IP80)。安装条件设为压接力75N,在压接温度80℃、压接时间0.5秒下进行压接之后,保持压接的状态,进而在压接温度260℃、压接时间3秒下进行了压接。接着,在清洁烘箱(爱斯佩克(ESPEC)股份有限公司)中对安装之后的半导体芯片进行后固化(175℃,2小时),由此制作了实施例1、实施例2及比较例1的半导体装置。
<初始连接性的评价>
使用万用表(爱德万(ADVANTEST)股份有限公司,商品名:R6871E)测定上述制作的半导体装置的连接电阻值,并评价了安装之后的初始导通。将半导体装置的周边(peripheral)部分的初始连接电阻值为30Ω~35Ω的情况评价为“A”,将初始连接电阻值小于30Ω的情况、超过35Ω的情况、或者因连接不良而无法显示出电阻值的情况评价为“B”。将结果示于表1。
<孔隙的评价>
对于上述制作的半导体装置,利用超声波影像诊断装置(因赛特(Insight)股份有限公司,商品名:Insight-300)拍摄外观图像,利用扫描器(精工爱普生(Seiko Epson)股份有限公司,商品名:GT-9300UF)导入半导体芯片上的包含膜状黏合剂的层的图像,使用图像处理软件(奥多比系统(Adobe systems)股份有限公司,商品名:Adobe Photoshop(注册商标)),通过色调校正及二阶色调化识别孔隙部分,利用直方图计算出孔隙部分所占的比例。将半导体芯片上的黏合剂部分的面积设为100%,将孔隙产生率为5面积%以下的情况评价为“A”,将孔隙产生率超过5面积%的情况评价为“B”。将结果示于表1。
<耐回焊性的评价>
在JEDEC level 1的条件下将上述制作的半导体装置高温吸湿之后,使半导体装置通过回焊炉(田村(Tamura)制作所股份有限公司)3次。对于回焊之后的半导体装置的连接性,利用与上述初始连接性的评价相同的方法进行评价,将无剥离且连接良好的情况评价为“A”,将发生剥离或连接不良的情况评价为“B”。将结果示于表1。
[表1]
如表1所示,实施例1及实施例2的黏合剂组合物的固化物与比较例1的黏合剂组合物的固化物相比,介质损耗角正切(DF值)更低。并且,具备实施例1及实施例2的黏合剂组合物的固化物的实施例1及实施例2的半导体装置在各评价中优异。
根据以上的结果确认到,本发明的黏合剂组合物能够充分降低介质损耗角正切(DF值)。
符号说明
1-半导体芯片,2-基板,10-半导体芯片主体,15、16-配线,20-基板主体,30、32、33-连接凸块,34-贯穿电极,40-黏合剂层,41-膜状黏合剂,50-中介层主体,100、200、300、400、500、600-半导体装置。
Claims (9)
1.一种黏合剂组合物,其含有树脂成分、热交联剂及固化剂,
所述树脂成分包含具有马来酰亚胺基的树脂。
2.根据权利要求1所述的黏合剂组合物,其中,
所述热交联剂包含丙烯酸树脂。
3.根据权利要求2所述的黏合剂组合物,其中,
所述丙烯酸树脂在25℃下为固体。
4.根据权利要求1至3中任一项所述的黏合剂组合物,其中,
所述固化剂包含热自由基产生剂。
5.根据权利要求4所述的黏合剂组合物,其中,
所述热自由基产生剂为有机过氧化物。
6.根据权利要求1至5中任一项所述的黏合剂组合物,其为膜状。
7.根据权利要求1至6中任一项所述的黏合剂组合物,其用于半导体装置的制造。
8.根据权利要求1至7中任一项所述的黏合剂组合物,其在半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的制造方法中用于所述连接部的密封。
9.一种半导体装置的制造方法,其为制造半导体芯片及配线电路基板各自的连接部相互电连接的半导体装置、或者多个半导体芯片各自的连接部相互电连接的半导体装置的方法,所述半导体装置的制造方法包括:
使用权利要求1至8中任一项所述的黏合剂组合物对所述连接部的至少一部分进行密封的工序。
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