CN106444300B - 曝光装置以及制造物品的方法 - Google Patents

曝光装置以及制造物品的方法 Download PDF

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Publication number
CN106444300B
CN106444300B CN201611027383.7A CN201611027383A CN106444300B CN 106444300 B CN106444300 B CN 106444300B CN 201611027383 A CN201611027383 A CN 201611027383A CN 106444300 B CN106444300 B CN 106444300B
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China
Prior art keywords
substrate
exposure
substrate stage
shot area
shot
Prior art date
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CN201611027383.7A
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English (en)
Chinese (zh)
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CN106444300A (zh
Inventor
伊藤觉
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Canon Inc
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Canon Inc
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Publication of CN106444300A publication Critical patent/CN106444300A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F2009/005—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201611027383.7A 2013-06-10 2014-06-05 曝光装置以及制造物品的方法 Active CN106444300B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-122024 2013-06-10
JP2013122024A JP5986538B2 (ja) 2013-06-10 2013-06-10 露光装置および物品の製造方法
CN201410245805.2A CN104238278B (zh) 2013-06-10 2014-06-05 曝光装置以及制造物品的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201410245805.2A Division CN104238278B (zh) 2013-06-10 2014-06-05 曝光装置以及制造物品的方法

Publications (2)

Publication Number Publication Date
CN106444300A CN106444300A (zh) 2017-02-22
CN106444300B true CN106444300B (zh) 2018-08-14

Family

ID=52005226

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201611027383.7A Active CN106444300B (zh) 2013-06-10 2014-06-05 曝光装置以及制造物品的方法
CN201410245805.2A Expired - Fee Related CN104238278B (zh) 2013-06-10 2014-06-05 曝光装置以及制造物品的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201410245805.2A Expired - Fee Related CN104238278B (zh) 2013-06-10 2014-06-05 曝光装置以及制造物品的方法

Country Status (4)

Country Link
US (1) US9557657B2 (cg-RX-API-DMAC7.html)
JP (1) JP5986538B2 (cg-RX-API-DMAC7.html)
KR (1) KR101784045B1 (cg-RX-API-DMAC7.html)
CN (2) CN106444300B (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111345031B (zh) * 2019-04-25 2021-10-15 深圳市大疆创新科技有限公司 无人机及其拍摄控制方法
JP7466403B2 (ja) 2020-08-03 2024-04-12 キヤノン株式会社 制御装置、リソグラフィー装置、制御方法および物品製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236447B1 (en) * 1997-08-29 2001-05-22 Canon Kabushiki Kaisha Exposure method and apparatus, and semiconductor device manufactured using the method
US6686990B2 (en) * 1999-05-19 2004-02-03 Nikon Corporation, Inc. Scanning exposure method with reduced time between scans
CN101221363A (zh) * 2006-09-20 2008-07-16 Asml荷兰有限公司 光刻设备和器件制造方法
US20120170008A1 (en) * 2011-01-01 2012-07-05 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
JP5489534B2 (ja) * 2009-05-21 2014-05-14 キヤノン株式会社 露光装置及びデバイス製造方法

Family Cites Families (18)

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US5343270A (en) * 1990-10-30 1994-08-30 Nikon Corporation Projection exposure apparatus
JPH06260384A (ja) * 1993-03-08 1994-09-16 Nikon Corp 露光量制御方法
US5617182A (en) * 1993-11-22 1997-04-01 Nikon Corporation Scanning exposure method
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JP3451604B2 (ja) * 1994-06-17 2003-09-29 株式会社ニコン 走査型露光装置
JPH0992611A (ja) * 1995-09-21 1997-04-04 Canon Inc 走査型露光装置および方法
JPH09115825A (ja) * 1995-10-19 1997-05-02 Nikon Corp 走査型投影露光装置
JP3514401B2 (ja) 1996-01-16 2004-03-31 キヤノン株式会社 走査型露光装置および方法ならびに半導体デバイスの製造方法
JP3728610B2 (ja) * 1996-07-04 2005-12-21 株式会社ニコン 走査型露光装置及び露光方法
US6646715B1 (en) * 1997-01-14 2003-11-11 Nikon Corporation Scanning exposure apparatus and method with run-up distance control
JPH11204421A (ja) * 1998-01-09 1999-07-30 Nikon Corp 露光装置の制御方法、露光装置、露光方法及び素子製造方法
JP4585649B2 (ja) * 2000-05-19 2010-11-24 キヤノン株式会社 露光装置およびデバイス製造方法
JP2002110526A (ja) * 2000-10-03 2002-04-12 Canon Inc 走査露光方法及び走査露光装置
KR100585108B1 (ko) * 2003-11-14 2006-06-01 삼성전자주식회사 스캔 방식의 노광 장치를 이용한 웨이퍼 노광 방법
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
CN100555568C (zh) * 2005-04-28 2009-10-28 株式会社尼康 曝光方法及曝光装置、以及元件制造方法
JP2009010202A (ja) * 2007-06-28 2009-01-15 Canon Inc 露光方法、露光装置およびデバイス製造方法
JP5498243B2 (ja) 2010-05-07 2014-05-21 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236447B1 (en) * 1997-08-29 2001-05-22 Canon Kabushiki Kaisha Exposure method and apparatus, and semiconductor device manufactured using the method
US6686990B2 (en) * 1999-05-19 2004-02-03 Nikon Corporation, Inc. Scanning exposure method with reduced time between scans
CN101221363A (zh) * 2006-09-20 2008-07-16 Asml荷兰有限公司 光刻设备和器件制造方法
JP5489534B2 (ja) * 2009-05-21 2014-05-14 キヤノン株式会社 露光装置及びデバイス製造方法
US20120170008A1 (en) * 2011-01-01 2012-07-05 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device

Also Published As

Publication number Publication date
KR20140144145A (ko) 2014-12-18
JP2014239193A (ja) 2014-12-18
JP5986538B2 (ja) 2016-09-06
CN104238278A (zh) 2014-12-24
US20140362357A1 (en) 2014-12-11
KR101784045B1 (ko) 2017-10-10
US9557657B2 (en) 2017-01-31
CN104238278B (zh) 2017-01-11
CN106444300A (zh) 2017-02-22

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