CN106381521A - 一种表面包覆掺铝氧化锌的导电二氧化钛晶须制备方法 - Google Patents
一种表面包覆掺铝氧化锌的导电二氧化钛晶须制备方法 Download PDFInfo
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- CN106381521A CN106381521A CN201610856205.9A CN201610856205A CN106381521A CN 106381521 A CN106381521 A CN 106381521A CN 201610856205 A CN201610856205 A CN 201610856205A CN 106381521 A CN106381521 A CN 106381521A
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- Prior art keywords
- crystal whisker
- titanium dioxide
- potassium
- dioxide crystal
- salt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610856205.9A CN106381521B (zh) | 2016-09-28 | 2016-09-28 | 一种表面包覆掺铝氧化锌的导电二氧化钛晶须制备方法 |
Applications Claiming Priority (1)
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CN201610856205.9A CN106381521B (zh) | 2016-09-28 | 2016-09-28 | 一种表面包覆掺铝氧化锌的导电二氧化钛晶须制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN106381521A true CN106381521A (zh) | 2017-02-08 |
CN106381521B CN106381521B (zh) | 2020-04-10 |
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CN201610856205.9A Active CN106381521B (zh) | 2016-09-28 | 2016-09-28 | 一种表面包覆掺铝氧化锌的导电二氧化钛晶须制备方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109763323A (zh) * | 2018-12-28 | 2019-05-17 | 杭州蓝色倾情服饰有限公司 | 抗静电面料及其制作方法 |
CN110373048A (zh) * | 2019-07-06 | 2019-10-25 | 王志胜 | 一种高分散性光稳定钛白粉的制备方法 |
CN116265399A (zh) * | 2021-12-17 | 2023-06-20 | 东北师范大学 | 一种导电氧化锌粉体及其制备方法 |
CN117174495A (zh) * | 2023-09-04 | 2023-12-05 | 华南理工大学 | 一种TiO2/C电极材料及其制备方法和在稀土回收中的应用 |
Citations (4)
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CN101062780A (zh) * | 2006-04-26 | 2007-10-31 | 四川大学 | 纳米二氧化钛及其复合粉体的机械力化学反应制备法 |
CN102001704A (zh) * | 2010-11-11 | 2011-04-06 | 攀钢集团钢铁钒钛股份有限公司 | 一种采用含钛溶液制备高品质钛白的方法 |
CN103570056A (zh) * | 2013-11-22 | 2014-02-12 | 江苏省东泰精细化工有限责任公司 | 一种掺铝纳米氧化锌重包覆铝导电粉体的制备方法 |
CN104630898A (zh) * | 2015-02-15 | 2015-05-20 | 江南大学 | 一种导电二氧化钛晶须的制备方法 |
-
2016
- 2016-09-28 CN CN201610856205.9A patent/CN106381521B/zh active Active
Patent Citations (4)
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CN101062780A (zh) * | 2006-04-26 | 2007-10-31 | 四川大学 | 纳米二氧化钛及其复合粉体的机械力化学反应制备法 |
CN102001704A (zh) * | 2010-11-11 | 2011-04-06 | 攀钢集团钢铁钒钛股份有限公司 | 一种采用含钛溶液制备高品质钛白的方法 |
CN103570056A (zh) * | 2013-11-22 | 2014-02-12 | 江苏省东泰精细化工有限责任公司 | 一种掺铝纳米氧化锌重包覆铝导电粉体的制备方法 |
CN104630898A (zh) * | 2015-02-15 | 2015-05-20 | 江南大学 | 一种导电二氧化钛晶须的制备方法 |
Non-Patent Citations (1)
Title |
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HUI MA,ET AL.: "Facile Synthesis of Electroconductive AZO@TiO2 Whiskers and Their Application in Textiles", 《JOURNAL OF NANOMATERIALS》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109763323A (zh) * | 2018-12-28 | 2019-05-17 | 杭州蓝色倾情服饰有限公司 | 抗静电面料及其制作方法 |
CN110373048A (zh) * | 2019-07-06 | 2019-10-25 | 王志胜 | 一种高分散性光稳定钛白粉的制备方法 |
CN116265399A (zh) * | 2021-12-17 | 2023-06-20 | 东北师范大学 | 一种导电氧化锌粉体及其制备方法 |
CN117174495A (zh) * | 2023-09-04 | 2023-12-05 | 华南理工大学 | 一种TiO2/C电极材料及其制备方法和在稀土回收中的应用 |
CN117174495B (zh) * | 2023-09-04 | 2024-05-17 | 华南理工大学 | 一种TiO2/C电极材料及其制备方法和在稀土回收中的应用 |
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CN106381521B (zh) | 2020-04-10 |
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Address after: 215000 room 413, building 6, China Shengze textile technology pioneer park, 1188 West 2nd Ring Road, Shengze Town, Wujiang District, Suzhou City, Jiangsu Province Patentee after: SUZHOU WEIDAO MATERIAL TECHNOLOGY Co.,Ltd. Address before: 215000, Jiangsu, Suzhou Industrial Park, Jinji Lake Road, 99, Suzhou, north of the city, 23 North building complex, room 214 Patentee before: SUZHOU WEIDAO MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230728 Address after: Floor 1, No. 9 Workshop, No. 189, Wangjiang Road, Suzhou Industrial Park, Jiangsu Province, 215000 Patentee after: SUZHOU KAIYING AUTOMATION EQUIPMENT Co.,Ltd. Address before: Room 413, building 6, China Shengze textile technology pioneer park, 1188 West 2nd Ring Road, Shengze Town, Wujiang District, Suzhou, Jiangsu 215000 Patentee before: SUZHOU WEIDAO MATERIAL TECHNOLOGY CO.,LTD. |
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