CN106374018B - 发光元件及其制造方法 - Google Patents

发光元件及其制造方法 Download PDF

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Publication number
CN106374018B
CN106374018B CN201610581500.8A CN201610581500A CN106374018B CN 106374018 B CN106374018 B CN 106374018B CN 201610581500 A CN201610581500 A CN 201610581500A CN 106374018 B CN106374018 B CN 106374018B
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light
layer
semiconductor
semiconductor structure
electrode
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CN106374018A (zh
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吕绍平
陈怡名
彭钰仁
林俊宇
蔡均富
徐子杰
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

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CN201610581500.8A 2015-07-24 2016-07-22 发光元件及其制造方法 Active CN106374018B (zh)

Priority Applications (1)

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CN202010984325.3A CN112234126B (zh) 2015-07-24 2016-07-22 发光元件及其制造方法

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US14/808,295 2015-07-24
US14/808,295 US9825088B2 (en) 2015-07-24 2015-07-24 Light-emitting device and manufacturing method thereof

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CN106374018B true CN106374018B (zh) 2020-10-20

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US (2) US9825088B2 (enExample)
JP (1) JP6925107B2 (enExample)
KR (1) KR20170012146A (enExample)
CN (2) CN112234126B (enExample)
DE (1) DE102016111923B4 (enExample)
TW (1) TWI736544B (enExample)

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US12426428B2 (en) * 2019-09-11 2025-09-23 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
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US10930814B1 (en) * 2019-09-11 2021-02-23 Jade Bird Display (shanghai) Limited Method of manufacturing multi-color light emitting pixel unit
CN110767670B (zh) * 2019-10-31 2022-11-15 成都辰显光电有限公司 显示面板、显示装置和显示面板的制作方法
US11211527B2 (en) 2019-12-19 2021-12-28 Lumileds Llc Light emitting diode (LED) devices with high density textures
US11264530B2 (en) 2019-12-19 2022-03-01 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US12408481B2 (en) 2019-12-19 2025-09-02 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
JP7423787B2 (ja) * 2019-12-23 2024-01-29 ルミレッズ リミテッド ライアビリティ カンパニー Ｉｉｉ族窒化物マルチ波長ｌｅｄアレイ
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US20210249467A1 (en) * 2020-02-10 2021-08-12 Raxium, Inc. Display device and associated method
KR20210106054A (ko) * 2020-02-19 2021-08-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 표시 장치
CN121078879A (zh) * 2020-03-30 2025-12-05 上海显耀显示科技有限公司 用于具有键合结构的led的系统和方法
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
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TW201705520A (zh) 2017-02-01
US20180012929A1 (en) 2018-01-11
US20170025567A1 (en) 2017-01-26
JP6925107B2 (ja) 2021-08-25
JP2017028287A (ja) 2017-02-02
TWI736544B (zh) 2021-08-21
CN106374018A (zh) 2017-02-01
CN112234126A (zh) 2021-01-15
DE102016111923A1 (de) 2017-02-09
US9825088B2 (en) 2017-11-21
CN112234126B (zh) 2024-12-24
DE102016111923B4 (de) 2025-07-24
KR20170012146A (ko) 2017-02-02

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