CN106062900B - 磁性薄膜以及包括磁性薄膜的应用设备 - Google Patents

磁性薄膜以及包括磁性薄膜的应用设备 Download PDF

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Publication number
CN106062900B
CN106062900B CN201580011466.4A CN201580011466A CN106062900B CN 106062900 B CN106062900 B CN 106062900B CN 201580011466 A CN201580011466 A CN 201580011466A CN 106062900 B CN106062900 B CN 106062900B
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China
Prior art keywords
magnetic
layer
magnetic recording
thin film
magnetic thin
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CN201580011466.4A
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English (en)
Chinese (zh)
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CN106062900A (zh
Inventor
中田仁志
岛津武仁
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0091—Magnetic properties, e.g. guiding magnetic flux
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Record Carriers (AREA)
  • Micromachines (AREA)
  • Magnetic Heads (AREA)
CN201580011466.4A 2014-06-24 2015-05-19 磁性薄膜以及包括磁性薄膜的应用设备 Active CN106062900B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-129203 2014-06-24
JP2014129203A JP6375719B2 (ja) 2014-06-24 2014-06-24 磁性薄膜および磁性薄膜を含む応用デバイス
PCT/JP2015/002519 WO2015198523A1 (ja) 2014-06-24 2015-05-19 磁性薄膜および磁性薄膜を含む応用デバイス

Publications (2)

Publication Number Publication Date
CN106062900A CN106062900A (zh) 2016-10-26
CN106062900B true CN106062900B (zh) 2018-03-23

Family

ID=54937635

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580011466.4A Active CN106062900B (zh) 2014-06-24 2015-05-19 磁性薄膜以及包括磁性薄膜的应用设备

Country Status (6)

Country Link
US (1) US10115890B2 (enExample)
JP (1) JP6375719B2 (enExample)
CN (1) CN106062900B (enExample)
MY (1) MY175040A (enExample)
SG (1) SG11201607105PA (enExample)
WO (1) WO2015198523A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017135767A1 (ko) 2016-02-05 2017-08-10 한양대학교 산학협력단 메모리 소자
JP6884322B2 (ja) * 2016-10-31 2021-06-09 国立大学法人福井大学 ２次元光走査ミラー装置の製造方法
TWI626162B (zh) * 2017-06-07 2018-06-11 國立清華大學 合金膜結晶織構誘導方法及其結構
JP2019047119A (ja) * 2017-09-04 2019-03-22 Tdk株式会社 磁気抵抗効果素子、磁気メモリ、および磁気デバイス
US10468592B1 (en) * 2018-07-09 2019-11-05 Applied Materials, Inc. Magnetic tunnel junctions and methods of fabrication thereof
CN110246656A (zh) * 2019-07-02 2019-09-17 西华大学 一种多层耦合图形化磁性薄膜及制备和测试方法
JP2020115217A (ja) * 2020-03-24 2020-07-30 国立大学法人福井大学 ２次元光走査ミラー装置、２次元光走査装置及び画像投影装置
CN113460951B (zh) * 2021-07-06 2023-07-25 北方工业大学 一种主动式mems固态制冷器件及其制造方法
JP7587795B2 (ja) * 2021-08-16 2024-11-21 株式会社デンソー 正方晶系薄膜構造体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040021990A1 (en) * 2002-03-28 2004-02-05 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
CN1503912A (zh) * 2001-04-24 2004-06-09 ���µ�����ҵ��ʽ���� 磁阻元件和使用该磁阻元件的磁阻磁头、磁记录装置和磁阻存储器件
CN101136213A (zh) * 2006-09-01 2008-03-05 黑罗伊斯公司 具有高各向异性合金和氧化物化合物的组合物的磁介质和溅射靶
CN100580968C (zh) * 2006-10-13 2010-01-13 株式会社东芝 磁阻元件和磁存储器

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JP4024499B2 (ja) * 2001-08-15 2007-12-19 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP4686430B2 (ja) * 2002-03-28 2011-05-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP2005333106A (ja) 2004-04-20 2005-12-02 Ken Takahashi 交換結合素子とその製造方法並びに交換結合素子を具備したデバイス
US20070096229A1 (en) 2005-10-28 2007-05-03 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory device
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置
JP5550007B2 (ja) * 2008-12-05 2014-07-16 国立大学法人東北大学 磁性薄膜及びその製造方法、並びにこのような磁性薄膜を用いた各種応用デバイス
JP4903277B2 (ja) * 2010-01-26 2012-03-28 株式会社日立製作所 磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP5811672B2 (ja) * 2011-08-04 2015-11-11 富士電機株式会社 垂直磁気記録媒体およびその製造方法
JP2014056624A (ja) * 2012-09-11 2014-03-27 Fuji Electric Co Ltd 規則化合金を含む薄膜およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1503912A (zh) * 2001-04-24 2004-06-09 ���µ�����ҵ��ʽ���� 磁阻元件和使用该磁阻元件的磁阻磁头、磁记录装置和磁阻存储器件
US20040021990A1 (en) * 2002-03-28 2004-02-05 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
CN101136213A (zh) * 2006-09-01 2008-03-05 黑罗伊斯公司 具有高各向异性合金和氧化物化合物的组合物的磁介质和溅射靶
CN100580968C (zh) * 2006-10-13 2010-01-13 株式会社东芝 磁阻元件和磁存储器

Also Published As

Publication number Publication date
SG11201607105PA (en) 2016-10-28
JP6375719B2 (ja) 2018-08-22
US10115890B2 (en) 2018-10-30
CN106062900A (zh) 2016-10-26
JP2016009753A (ja) 2016-01-18
WO2015198523A1 (ja) 2015-12-30
MY175040A (en) 2020-06-03
US20160372657A1 (en) 2016-12-22

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