CN106024821B - A kind of terahertz wave detector part encapsulation - Google Patents
A kind of terahertz wave detector part encapsulation Download PDFInfo
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- CN106024821B CN106024821B CN201610545538.XA CN201610545538A CN106024821B CN 106024821 B CN106024821 B CN 106024821B CN 201610545538 A CN201610545538 A CN 201610545538A CN 106024821 B CN106024821 B CN 106024821B
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- thz wave
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- bracket
- substrate
- detection chip
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 25
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000084 colloidal system Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000012856 packing Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229910000833 kovar Inorganic materials 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of encapsulation of terahertz wave detector part, the welding surface of substrate or bracket comprising an at least THz wave detection chip and the carrying THz wave detection chip, the electrical face of chip and the substrate or the outer lead electrode on bracket is in the same direction.THz wave reflecting layer is set above the electrical face of chip, realizes chip to the double absorption of THz wave, to improve the absorption efficiency of detector chip.A kind of terahertz wave detector part encapsulation of the invention has many advantages, such as that low manufacture cost, THz wave absorption efficiency are high, is suitable for industrialized production, has a good application prospect.
Description
Technical field
The present invention relates to a kind of encapsulation of terahertz wave detector part, it is especially a kind of based on Terahertz metallic reflector too
The encapsulation of Hertz wave sensitive detection parts.
Background technique
Terahertz Technology receives significant attention in recent years, and development speed is also very surprising.THz wave refers to frequency
Electromagnetic wave of the rate in 0.1~10THz wave band, be located at it is infrared between microwave, in macroelectronics to microcosmic photonics
Transition stage.THz wave has the interaction effect between electromagnetic wave and substance extremely abundant, in physics, chemistry, biology
Equal numerous areas have broad application prospects.In the development and utilization of terahertz wave band, detection terahertz signal, which has, to be lifted
The meaning of sufficient weight.On the one hand, with the optical region electromagnetic wave phase ratio of shorter wavelength, THz wave photon energy is low, and background is made an uproar
Sound generally takes up significant status；On the other hand, the depth of the application with Terahertz Technology in the especially military field of each field
Enter to carry out, the requirement that receiving sensitivity becomes inevitable is continuously improved.
However existing terahertz detector there is a problem of low to THz wave absorptivity, wherein one of reason is exactly one
THz wave is divided directly to transmit THz wave detection chip, there is no detected to absorb by chip.One kind, which possible solution, is
THz wave reflecting layer is set above the electrical face of chip, then by flip-chip.After chip absorbs THz wave for the first time in this way,
Reflecting layer reflected terahertz hereby wave again, realizes chip to the double absorption of THz wave, to improve the absorption effect of detector chip
Rate.But controlled collapsible chip connec-tion is at high cost at present, the equipment of production is expensive, and production efficiency is relatively low.
Summary of the invention
The main purpose of the present invention is to provide a kind of encapsulation of terahertz wave detector part, to overcome terahertz in the prior art
The hereby technical problem that wave detector reverse installation process is difficult, THz wave absorptivity is low.
To realize aforementioned invention purpose, The technical solution adopted by the invention is as follows:
A kind of terahertz wave detector part encapsulation comprising an at least THz wave detection chip and carries the THz wave
The substrate or bracket of detection chip, it is characterised in that: electrode on the chip in a manner of wire bonding with substrate or bracket
On correspondence lead electrode connection；The welding surface of outer lead electrode on the substrate or bracket electrically faces same with chip
Direction.
Further, the position that chip is fixed is corresponded to as the material high to THz wave transmissivity on substrate or bracket, wrap
It includes but is not limited to ceramics, plastics, quartz, glass.
Further, chip is sticked on substrate or bracket by using the die bond material high to THz wave transmissivity, Gu
Brilliant material includes but is not limited to epoxide-resin glue, silica gel.
Further, it is arranged fluted on substrate or bracket, outer pin welding surface and slot opening are towards same direction.
Further, a cover board is set on reeded substrate or bracket, is provided on cover board and THz wave is reflected
The high material of rate, including but not limited to aluminium, copper, gold, silver, kovar alloy.Further, Terahertz of the cover board towards chip
Wave reflection face is concave surface, it is preferable that the focus of the concave mirror is in chip position.
Alternatively, being provided with insulating layer and reflecting layer in chip surface, insulating layer includes but is not limited to silica, phosphorus silicon glass
Glass, polyimides；Reflecting layer is the material high to THz wave reflectivity, including but not limited to aluminium, copper, gold, silver, conjunction can be cut down
Gold.It is filled with packing colloid in groove, so that it is covered chip, packing colloid includes but is not limited to epoxide-resin glue, silica gel.
Compared with prior art, the beneficial effects of the present invention are:
(1) chip package of THz wave detection is using conventional die bond bonding wire craft, low manufacture cost, covers on chip
Packing colloid or cover board play the role of protecting chip.
(2) THz wave reflecting layer is set on the chip of terahertz wave detector part encapsulation, or in substrate or bracket
Cover board on be arranged THz wave reflecting layer, absorption of the chip to THz wave is increased, to improve detection efficient.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 1 of the invention；
Fig. 2 is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 2 of the invention；
Fig. 3 is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 3 of the invention；
Fig. 4 is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 4 of the invention.
Fig. 5 is a kind of terahertz wave detector part and reading circuit welded structure schematic diagram of the invention.
Specific embodiment
Further description of the technical solution of the present invention with several specific implementation cases with reference to the accompanying drawing.
Embodiment 1
It refering to fig. 1, is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 1 of the invention.The dress
The substrate 104 of the THz wave detection chip is set comprising an at least THz wave detection chip 101 and carries, substrate 104
Material is ceramics or plastics.Substrate 104 is equipped with groove, setting metal wiring layer 105 in groove, along metal wiring layer on groove
Ubm layer 106 is set on 105, then outer pin 107 is set.Chip is fixed on the substrate by die bond material 108
Groove in, the electrical face of chip is consistent with slot opening direction.Die bond material 108 includes but is not limited to epoxide-resin glue, silica gel.
Chip surface is equipped with insulating layer 102, and insulating layer includes but is not limited to silica, phosphorosilicate glass, polyimides.Chip electrode
103 are connect by bonding wire craft with the lead electrode terminal 109 of metal wiring layer 105 in groove, and terahertz is arranged on groove
Chip is protected in hereby reflective patch 110.Terahertz reflective patch is the quartz or ceramics that bottom surface is coated with THz wave reflecting layer 111
Piece, the material in THz wave reflecting layer include but is not limited to aluminium, copper, gold, silver, kovar alloy.
It since outer pin 107 is located at figure middle and upper part, is turned when the encapsulation is with welding circuit board, the electrical face of chip is met
To circuit board, chip back is met to Terahertz wave source.As shown in figure 5,501 be reading circuit, 502 be terahertz wave detector
Part.The THz wave for penetrating chip can be reflected back chip by THz wave reflective patch, to improve detection efficient.
Embodiment 2
Referring to Fig.2, it is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 2 of the invention.The dress
Set comprising an at least THz wave detection chip 201 and carry the groove with through-hole 216 of the THz wave detection chip
Along being designed with metal wiring layer on shape bracket 204, frame bottom and groove, respectively 205 and 215, pass through metal in through-hole 216
Realize electrical connection.Ubm layer 206 is set on metal wiring layer 215, then outer pin 207 is set.Bracket 204 is low temperature
Common burning porcelain (LTCC) bracket, metal is Ag in through-hole 216.Chip is fixed on the groove of the bracket by die bond material 208
Interior, the electrical face of chip is consistent with slot opening direction.Chip surface is equipped with insulating layer 202 and chip electrode 203, insulating layer include
But it is not limited to silica, phosphorosilicate glass, polyimides.Electrode 203 passes through metal wiring layer 205 in bonding wire craft and groove
Lead electrode terminal 209 connects, and metal cover board 210 is arranged on groove, protects chip.Metal cover board material includes but unlimited
In aluminium, copper, gold, silver, kovar alloy.
It since outer pin 207 is located at figure middle and upper part, is turned when the encapsulation is with welding circuit board, the electrical face of chip is met
To circuit board, chip back is met to Terahertz wave source, and the THz wave for penetrating chip can be reflected back core by metal cover board 210
Piece, to improve detection efficient.
Embodiment 3
It is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 3 of the invention refering to Fig. 3.This reality
Apply an encapsulating structure the difference from embodiment 1 is that, Terahertz reflective patch 110 in embodiment 1 is writing board shape, this implementation
The reflecting surface of THz wave reflective patch 310 in example is focus in the concave surface of chip position.Meanwhile the fluting of bracket 304 is more
It is deep, and it is designed as being more suitable the installation of concave reflection cover board.
It is the THz wave reflective patch 310 of concave surface by reflecting surface, can be further improved THz wave and be reflected into core
The intensity of piece, to improve detection efficient.
Embodiment 4
It is a kind of structural schematic diagram of terahertz wave detector part encapsulation embodiment 4 of the invention refering to Fig. 4.The dress
Set comprising an at least THz wave detection chip 401 and carry the groove-like bracket 404 of the THz wave detection chip.Chip
It is fixed on by die bond material 408 in the groove of the bracket, the fixed stent area lower part of chip is without metal, to avoid pair
From the blocking of the THz wave of bracket lower part incidence.Chip surface is equipped with insulating layer 402, and insulating layer includes but is not limited to titanium dioxide
Silicon, phosphorosilicate glass, polyimides are chip electrode 403 at insulating layer openings.THz wave reflecting layer is provided on insulating layer
411, reflecting layer is the material high to THz wave reflectivity, including but not limited to aluminium, copper, gold, silver, kovar alloy.Chip electricity
Pole 403 is connected by the lead electrode terminal 409 of bonding wire craft and bracket, and packing colloid 420 is filled in groove, makes it
Chip is covered, so that packing colloid includes but is not limited to epoxide-resin glue, silica gel inside protection packaging.The outer pin 407 of bracket
It is upper curved, it is not less than package main body part.
Since the welding surface 417 of outer pin 407 is to turn upward, when so that the encapsulation is with welding circuit board in figure,
The electrical face of chip is met to circuit board, and chip back is met to Terahertz wave source, and the Terahertz reflecting layer 411 on the electrical face of chip can
The THz wave for penetrating chip is reflected back chip, to improve detection efficient.
The preferred embodiment of the present invention has been described in detail above.The invention is not limited to above embodiment, such as
Fruit does not depart from the spirit and scope of the present invention to various changes or deformation of the invention, if these changes and deformation belong to this hair
Within the scope of bright claim and equivalent technologies, then the present invention is also intended to encompass these changes and deformation.
Claims (5)
1. a kind of terahertz wave detector part encapsulation comprising an at least THz wave detection chip and carries the THz wave spy
Survey the substrate or bracket of chip, it is characterised in that:
Electrode in the THz wave detection chip is electric with the corresponding lead on substrate or bracket in a manner of wire bonding
Pole connection；
The welding surface and THz wave detection chip of outer lead electrode on the substrate or bracket electrically face same direction；
It is arranged fluted on the substrate or bracket, outer pin welding surface and slot opening are towards same direction, reeded
One cover board is set on substrate or bracket, is provided with the material high to THz wave reflectivity on the cover board, including aluminium, copper, gold,
The THz wave reflecting surface of silver or kovar alloy, the cover board towards THz wave detection chip is concave surface, includes the concave surface
The focus of reflecting mirror is in THz wave detection chip position.
2. a kind of terahertz wave detector part encapsulation according to claim 1, it is characterised in that: on the substrate or bracket
The fixed position of corresponding THz wave detection chip is the material high to THz wave transmissivity, including ceramics, plastics, quartz or
Glass.
3. a kind of terahertz wave detector part encapsulation according to claim 1, it is characterised in that: the THz wave detection
Chip is sticked on substrate or bracket by using the die bond material high to THz wave transmissivity, and the die bond material includes epoxy
Resin glue or silica gel.
4. a kind of terahertz wave detector part encapsulation according to claim 1, it is characterised in that: the THz wave detection
Chip surface is provided with insulating layer and reflecting layer, and the insulating layer includes silica, phosphorosilicate glass or polyimides；It is described anti-
Penetrating layer is the material high to THz wave reflectivity, including aluminium, copper, gold, silver or kovar alloy.
5. a kind of terahertz wave detector part encapsulation according to claim 1, it is characterised in that: be filled in the groove
Packing colloid, the packing colloid cover THz wave detection chip, and the packing colloid includes epoxide-resin glue or silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610545538.XA CN106024821B (en) | 2016-07-07 | 2016-07-07 | A kind of terahertz wave detector part encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610545538.XA CN106024821B (en) | 2016-07-07 | 2016-07-07 | A kind of terahertz wave detector part encapsulation |
Publications (2)
| Publication Number | Publication Date |
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| CN106024821A CN106024821A (en) | 2016-10-12 |
| CN106024821B true CN106024821B (en) | 2019-03-15 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658255B2 (en) * | 2017-01-03 | 2020-05-19 | Advanced Semsconductor Engineering, Inc. | Semiconductor device package and a method of manufacturing the same |
| CN107036874B (en) * | 2017-05-25 | 2021-03-16 | 华东理工大学 | A encapsulation type enrichment separator for online solid-phase spectral detection |
| CN112585746A (en) * | 2018-08-23 | 2021-03-30 | 罗姆股份有限公司 | Terahertz device and method for manufacturing terahertz device |
| JP7340391B2 (en) * | 2019-09-02 | 2023-09-07 | ローム株式会社 | terahertz device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038926A (en) * | 2005-12-15 | 2007-09-19 | 三洋电机株式会社 | Semiconductor device |
| CN101226926A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Assembled structure of large area array infrared detector on cold platform and assembled method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7329861B2 (en) * | 2003-10-14 | 2008-02-12 | Micron Technology, Inc. | Integrally packaged imaging module |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038926A (en) * | 2005-12-15 | 2007-09-19 | 三洋电机株式会社 | Semiconductor device |
| CN101226926A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Assembled structure of large area array infrared detector on cold platform and assembled method thereof |
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