CN202736912U - Photoelectric coupler - Google Patents

Photoelectric coupler Download PDF

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Publication number
CN202736912U
CN202736912U CN2012201018579U CN201220101857U CN202736912U CN 202736912 U CN202736912 U CN 202736912U CN 2012201018579 U CN2012201018579 U CN 2012201018579U CN 201220101857 U CN201220101857 U CN 201220101857U CN 202736912 U CN202736912 U CN 202736912U
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China
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mentioned
photo detector
lead frame
light filter
optical light
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CN2012201018579U
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Inventor
福中敏昭
德尾圣一
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Asahi Kasei Microdevices Corp
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Asahi Kasei EMD Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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    • H01L2924/181—Encapsulation
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Manufacturing & Machinery (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The utility model provides a photoelectric coupler, which can have a lowered height and reduce the number of components. The photoelectric coupler comprises a wiring substrate (1), an IR light-emitting device (60) jointed on the surface (1a) of the wiring substrate and an IR light-receiving device (50) jointed on the surface of the wiring substrate and separated from the IR light-emitting device. On the surface of the wiring substrate, a light-emitting face (61a) having the light-emitting part (61) of the IR light-emitting device is opposed to a light-receiving face (20a) having an optical filter (20) of the IR light-receiving device. The IR light-emitting device and the light-receiving device are not arranged in a vertical way but in a horizontal way. Therefore, the height of the photoelectric coupler can be reduced. Meanwhile, the light output from the light-emitting face directly irradiates the light-receiving face without passing through a recessed reflection plane, etc. The photoelectric coupler which requires no recessed reflection plane, etc. has the components reduced.

Description

Photoelectrical coupler
Technical field
The utility model relates to photoelectrical coupler.
Background technology
As this prior art, for example there is patent documentation 1 disclosed technology.In the document, disclose such as this patent documentation as shown in Figure 5, the light-emitting area that makes light-emitting component and the sensitive surface of photo detector in the light-proofness resin the photoelectrical coupler of structure relative on the above-below direction (below, be called conventional example 1).
In addition, the sensitive surface that discloses the light-emitting area that makes light-emitting component and photo detector in Fig. 1 of this patent documentation 1 is respectively towards upward direction and the photoelectrical coupler of the structure of the reflecting surface that disposes concavity above above-mentioned light-emitting component and the photo detector (below, be called conventional example 2).In this conventional example 2, the lower surface of light-proofness resin is the reflecting surface of concavity, two secondary reflections that the light that sends from the light-emitting area of light-emitting component occurs through the reflecting surface at this concavity and arrive the sensitive surface of photo detector.
Patent documentation 1: TOHKEMY 2001-358361 communique
Yet in above-mentioned conventional example 1, light-emitting component and the photo detector position relationship in the light-proofness resin is above-below direction, therefore, exists the height of photoelectrical coupler to become large such problem.And in conventional example 2, light-emitting component and photo detector are configured on the surface of insulating properties substrate, therefore, compare with conventional example 1, and conventional example 2 has the possibility of the height that can reduce to encapsulate.
But, in conventional example 2, in order to ensure the light path from the light-emitting area of light-emitting component to the sensitive surface of photo detector, need the reflecting surface of concavity, correspondingly there is the more such problem of part number.Like this, in conventional example 1,2, this has problems aspect two separately at the height of photoelectrical coupler, part number, and often system is larger on the whole.
The utility model content
Therefore, the utility model is made in view of such situation, and its purpose is to improve the photoelectrical coupler that can carry out low level and can reduce the part number.
In order to address the above problem, the photoelectrical coupler of a technical scheme of the present utility model is characterised in that, this photoelectrical coupler comprises: circuit board; Light-emitting device, it is bonded on the face of above-mentioned circuit board; Infrared rays receiver, it is bonded on the position that separates with above-mentioned light-emitting device on the face of above-mentioned circuit board, and on a face of above-mentioned circuit board, the light-emitting area of above-mentioned light-emitting device is relative with the sensitive surface of above-mentioned infrared rays receiver.
Adopt such structure, compare with conventional example 1, light-emitting device and infrared rays receiver are not the position relationships of upward and downward, but therefore the position relationship of horizontal direction, can reduce the height of photoelectrical coupler.In addition, compare with conventional example 2, can be via the reflecting surface of concavity etc. from the light of the light-emitting area of light-emitting device output, but directly to the sensitive surface incident of infrared rays receiver, therefore, need to be at the reflecting surface of light path configuration concavity etc.Therefore, can reduce the part number.And, the problem that the scattering that does not also exist light path to occur at the reflecting surface of concavity because of light broadens.In addition, as " face of circuit board " of the present utility model, for example be the surperficial 1a of circuit board 1 described later.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned infrared rays receiver has: for detection of the photo detector of light; Lead frame with breakthrough part; Lead-in wire; Sealing, in this photoelectrical coupler, above-mentioned photo detector is configured in the above-mentioned breakthrough part of above-mentioned lead frame, the photoelectric conversion part of above-mentioned photo detector is electrically connected by above-mentioned lead-in wire with above-mentioned lead frame, the sensitive surface of above-mentioned photo detector exposes from the face towards a side of above-mentioned light-emitting device of above-mentioned sealing, and, being engaged on the face on a face that is bonded on above-mentioned circuit board of infrared rays receiver, the side of above-mentioned lead frame exposes from the above-mentioned face that is engaged as a plurality of portion of terminal that are electrically connected with above-mentioned circuit board for the mode with vertical installation.
Adopt such structure, the allocation position of photo detector is not on lead frame, but in the breakthrough part of lead frame.Thus, the installation site of photo detector can be reduced, therefore, the infrared rays receiver of further slimming can be realized.Can help the miniaturization of photoelectrical coupler.In addition, as " sealing " of the present utility model, for example be mold formed resin 45 described later.As " photoelectric conversion part ", it for example is photo-electric conversion element 13 described later.
In addition, the feature of above-mentioned photoelectrical coupler also can be, each above-mentioned a plurality of portion of terminal are to be engaged a side of face and to configure across the above-mentioned mode that is mutually symmetrical with the opposite side of the opposite side of an above-mentioned side that is centered close to that is engaged face overlooking when observing above-mentioned.
Adopt such structure, a plurality of portion of terminal balances are configured in the face of being engaged well, therefore, even will be in the situation that a plurality of portion of terminal is for example carried out soldering by reflow ovens, also can in the operation of soldering, keep the balance of the moment that the physical property etc. because of scolding tin causes.Thus, can suppress the generation of so-called Manhattan phenomenon.In addition, as " a plurality of portion of terminal " of the present utility model, for example be side (the outside terminal for connecting section) 31c of the 1st lead frame 31 described later, the side of the 2nd lead frame 36 (outside terminal for connecting section) 36c.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned infrared rays receiver also has: lid, and it is installed on above-mentioned sealing; Optical light filter, it is provided with the peristome of perforation for the sensitive surface that covers above-mentioned photo detector in above-mentioned lid, and above-mentioned optical light filter is housed in the above-mentioned peristome.At this, optical light filter has the function that the light selecting performance ground (that is, transmitance is higher) that makes desirable wave-length coverage sees through.Adopt such structure, can only make the sensitive surface of the light arrival photo detector of desirable wave-length coverage, can utilize optical light filter to block not light in this desirable wave-length coverage.Therefore, can make by the S/N ratio raising of opto-electronic conversion from the signal of telecommunication (that is, the detection signal of light) of photo detector output.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned lead frame comprises: the 1st lead frame, and it has the 1st breakthrough part; The 2nd lead frame, it has the 2nd breakthrough part, above-mentioned the 1st leadframe configuration is on above-mentioned the 2nd lead frame, above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part coincide when overlooking observation, as above-mentioned breakthrough part, be formed with above-mentioned sealing to overlook the state that disposes above-mentioned photo detector in the zone that coincides when observing at above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part, the 1st side of above-mentioned the 1st lead frame and the 2nd side of above-mentioned the 2nd lead frame have respectively the above-mentioned sealing of shape of one's own as above-mentioned a plurality of portion of terminal the above-mentioned face that is engaged exposes.
Adopt such structure, by making up the 1st lead frame and the 2nd lead frame, consist of 1 lead frame.In addition, the breakthrough part of this 1 lead frame (namely, the 1st breakthrough part and the 2nd breakthrough part are overlooked the zone that is coinciding when observing) width be suppressed to the size identical with the width of the 1st breakthrough part (perhaps the 2nd breakthrough part), the degree of depth of the breakthrough part of this 1 lead frame is the degree of depth of the 1st breakthrough part and the degree of depth sum of the 2nd breakthrough part.Therefore, can be easy to realize (that is, the footpath is deeply larger) breakthrough part that the more narrow and deep degree of width is darker.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned photo detector comprises the 1st photo detector and the 2nd photo detector, above-mentioned optical light filter comprises the 1st optical light filter, the 2nd optical light filter that characteristic is different from the characteristic of above-mentioned the 1st optical light filter, above-mentioned breakthrough part comprises the 1st zone, the 2nd zone that the position is different from the position in above-mentioned the 1st zone, above-mentioned peristome comprises the 1st peristome, the 2nd peristome that the position is different from the position of above-mentioned the 1st peristome, above-mentioned the 1st photo detector is configured in above-mentioned the 1st zone, above-mentioned the 2nd photo detector is configured in above-mentioned the 2nd zone, above-mentioned the 1st optical light filter is housed in above-mentioned the 1st peristome, and above-mentioned the 2nd optical light filter is housed in above-mentioned the 2nd peristome.At this, as " characteristic ", for example can enumerate the light transmission rate that exists with ... wavelength of bright dipping.For example, for the 1st optical light filter, as its characteristic, has the function that the light selecting performance ground (that is, transmitance is higher) that only makes the 1st wave-length coverage sees through.For the 2nd optical light filter, as its characteristic, the function that sees through with having the light selecting performance that only makes wave-length coverage the 2nd wave-length coverage different from the 1st wave-length coverage.
Adopt such structure, for example, can be based on determining incident and next light intensity and this light wavelength scope from the signal of telecommunication of the 1st photo detector output with from the signal of telecommunication of the 2nd photo detector output.For example, with this gaseous species, this gas concentration accordingly, the infrared ray that shines in the specific gas atmosphere gas is absorbed specific wavelength components quantitatively.Therefore, by determining to detect the gaseous species that exists in light path, the concentration of this gas from the light-emitting device irradiation and to light intensity and this light wavelength scope that infrared rays receiver incident comes.Thereby this photoelectrical coupler can be highly suitable for detector etc.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned infrared rays receiver comprises: photo detector, and it is for detection of light; Optical light filter, it is used for covering the sensitive surface of above-mentioned photo detector; The 1st lead frame, it has the 1st breakthrough part; The 2nd lead frame, it has the 2nd breakthrough part; Lead-in wire; Sealing, in this photoelectrical coupler, above-mentioned the 1st leadframe configuration is on above-mentioned the 2nd lead frame, above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part coincide when overlooking observation, be configured in above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part in overlooking the zone that coincides when observing with above-mentioned photo detector and above-mentioned optical light filter, and, the photoelectric conversion part of the face of being located at a side opposite to sensitive surface of above-mentioned photo detector and the state that above-mentioned lead frame is electrically connected by the above-mentioned lead-in wire above-mentioned sealing that is shaped, the sensitive surface of above-mentioned optical light filter exposes from the exposing to the face in the outside of above-mentioned sealing of formed thereby, namely the face towards a side of above-mentioned light-emitting device from the above-mentioned sealing of formed thereby exposes, and, respectively from the face to the outside of exposing of the above-mentioned sealing of formed thereby, namely the face that is engaged on a face that will be bonded on above-mentioned circuit board of the above-mentioned sealing of formed thereby exposes as a plurality of portion of terminal that are used for being electrically connected with above-mentioned circuit board for the 1st side of above-mentioned the 1st lead frame and the 2nd side of above-mentioned the 2nd lead frame.
Adopt such structure, by making up the 1st lead frame and the 2nd lead frame, can be easy to (that is, aspect ratio is larger) breakthrough part of realizing that the more narrow and deep degree of width is darker.Thus, can be easy in the breakthrough part of lead frame, guarantee be used to the space of accommodating optical light filter.The installation site of photo detector and optical light filter can be reduced, therefore, the infrared rays receiver of further slimming can be realized.
In addition, the feature of above-mentioned photoelectrical coupler also can be, above-mentioned photo detector comprises the 1st photo detector and the 2nd photo detector, above-mentioned optical light filter comprises the 1st optical light filter be used to the sensitive surface that covers above-mentioned the 1st photo detector, the characteristic of characteristic and above-mentioned the 1st optical light filter is different and be used for covering the 2nd optical light filter of the sensitive surface of above-mentioned the 2nd photo detector, the zone that above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part coincide when overlooking observation comprises the 1st zone, the 2nd zone that the position is different from the position in above-mentioned the 1st zone, above-mentioned the 1st photo detector and above-mentioned the 1st optical light filter are configured in above-mentioned the 1st zone, and above-mentioned the 2nd photo detector and above-mentioned the 2nd optical light filter are configured in above-mentioned the 2nd zone.Adopt such structure, for example, can be based on determining incident and next light intensity from the signal of telecommunication of the 1st photo detector output with from the signal of telecommunication of the 2nd photo detector output is next one by one for each wave-length coverage.Thereby for example, this photoelectrical coupler can be highly suitable for detector etc.
Adopt the utility model, the photoelectrical coupler that can carry out low level and can reduce the part number can be provided.
Description of drawings
(a)～(b) of Fig. 1 is the figure of structure example of the photoelectrical coupler 100 of expression the 1st execution mode.
(a)～(c) of Fig. 2 is the figure of structure example of the IR infrared rays receiver 50 of expression the 1st execution mode.
(a)～(b) of Fig. 3 is the figure of the structure example of expression photo detector 10.
(a)～(b) of Fig. 4 is the figure of structure example of the 1st lead frame 31 of expression the 1st execution mode.
(a)～(b) of Fig. 5 is the figure of structure example of the 2nd lead frame 36 of expression the 1st execution mode.
(a)～(b) of Fig. 6 is the figure of the structure example of expression lid 55.
Fig. 7 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Fig. 8 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Fig. 9 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Figure 10 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Figure 11 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Figure 12 is the figure of the manufacture method of expression photoelectrical coupler 100.
(a)～(b) of Figure 13 is the figure of structure example of the photoelectrical coupler 200 of expression the 2nd execution mode.
(a)～(e) of Figure 14 is the figure of the manufacture method of expression photoelectrical coupler 200.
Figure 15 is the figure of structure example of the photoelectrical coupler 300 of expression the 3rd execution mode.
(a)～(b) of Figure 16 is the figure of structure example of the lead frame 130 of expression the 3rd execution mode.
(a)～(e) of Figure 17 is the figure of the manufacture method of expression photoelectrical coupler 300.
Figure 18 is other the figure of structure example of expression IR infrared rays receiver 50.
(a)～(b) of Figure 19 is other the figure of structure example of expression the 1st lead frame 31 and the 2nd lead frame 36.
(a)～(b) of Figure 20 is other the figure of structure example of expression photoelectrical coupler 100.
Embodiment
Below, utilize description of drawings execution mode of the present utility model.In addition, in each figure of following explanation, for the identical Reference numeral of part mark with identical structure, sometimes also omit the explanation of the repetition of this part.
(1) the 1st execution mode
(1.1) overall structure of photoelectrical coupler
(a) of Fig. 1 is the face to face surface installing type of expression the 1st execution mode of the present utility model and the vertical stereogram of the structure example of the photoelectrical coupler 100 of mount type, and (b) of Fig. 1 dissects the cutaway view that forms with this stereogram along Z 1-Z ' 1 line.In addition, in (b) of Fig. 1, omitted the diagram of housing.
Shown in Fig. 1 (a) and Fig. 1 (b), this photoelectrical coupler 100 for example comprises: circuit board 1; I R light-emitting device 60, it is bonded on the surperficial 1a of this circuit board 1; IR infrared rays receiver 50, it is bonded on the position that separates with IR light-emitting device 60 on the surperficial 1a of circuit board 1; Housing 90, it surrounds circuit board 1, IR light-emitting device 60, IR infrared rays receiver 50 from the outside.
At this, IR light-emitting device 60 is the devices that send infrared ray (I R), and for example IR is that light-emitting diode, bulb (that is both can be only to send ultrared device,, perhaps, also can be the device that sends the light that comprises infrared ray and infrared ray wavelength in addition).In addition, IR infrared rays receiver 50 is the sensing devices that for example receive IR, is that the IR that will receive converts the device that the signal of telecommunication is also exported the converted signal of telecommunication to.In this photoelectrical coupler 100, on the surperficial 1a of circuit board 1, the light-emitting area 61a of the illuminating part 61 of IR light-emitting device 60 and the sensitive surface of IR infrared rays receiver 50 (being accommodated in this embodiment, the sensitive surface 20a of the optical light filter 20 of lid 55) are relative.That is, this photoelectrical coupler 100 is to be installed in face to face surface installing type on the surperficial 1a with its light-emitting area 61a and sensitive surface 20a state face to face.Thus, from the light of the light-emitting area 61a of IR light-emitting device 60 output directly to the sensitive surface 20a incident of optical light filter 20.
In addition, housing 90 is made of the resin of for example light-proofness, is provided with the peristome 91 of gas inflow usefulness in the part of housing 90.Because the housing 90 by light-proofness surrounds, so the sensitive surface 20a that arrives optical light filter 20 from the light of the light-emitting area 61a of IR light-emitting device 60 output is only arranged, in addition the light light of the outside of housing (that is, from) can not arrive the sensitive surface 20a of optical light filter 20.
In this photoelectrical coupler 100, at Z direction (that is, the thickness direction with IR infrared rays receiver 50, also be the direction along light path) dimensions length be made as L1, with the Y-direction of IR infrared rays receiver 50 (namely, when dimensions length short transverse) was made as H1, L1＜H1 was vertical mount type.
So-called vertically mount type, in other words, profile (encapsulation) is cuboid, the 1st of area maximum in 6 faces of this cuboid surperficial quadrature with circuit board, and, be 1 face in 6 faces of this cuboid be again the mode that the 2nd little face of area of the 1st of Area Ratio is engaged in the surface of circuit board.In execution mode of the present utility model, should " the 2nd face " be the face 49 (for example, with reference to (c) of Fig. 2) that is engaged described later, the side 31c of lead frame 31 is engaged face 49 from this and exposes.And the side 31c that this exposes is electrically connected (that is, vertical installation connects) as a plurality of portion of terminal with circuit board 1.Thus, can seek to reduce the erection space (occupied area) of IR infrared rays receiver 50 on the surperficial 1a of circuit board 1.
In addition, in this embodiment, lid 55 also plays the effect as the supporting member of the IR infrared rays receiver 50 of vertically installing.In addition, lid 55 also can be fixed on the surperficial 1a of circuit board 1 by not shown cement etc., in the case, can further strengthen supporting functions.Then, specify for the each several part that consists of photoelectrical coupler 100.
(1.2) structure of IR infrared rays receiver
Shown in Fig. 1 (a) and Fig. 1 (b), IR infrared rays receiver 50 for example comprises: photo detector 10, and it is for detection of infrared ray (IR); Lead frame 30; Lead-in wire 40, it is used for photo detector 10 is electrically connected with lead frame 30 by formations such as (Au); Mold formed resin 4, it is used for covering photo detector 10.In addition, this IR infrared rays receiver 50 for example has: lid 55, and it utilizes cement 46 to be installed on mold formed resin 45 (fixing); Optical light filter 20, it is housed in the peristome of perforation of this lid 55.
(a) of Fig. 2 be expression the 1st execution mode of the present utility model IR infrared rays receiver 50 be in the stereogram of an example that lid is disassembled the outward appearance of state, (b) of Fig. 2 dissects the cutaway view that forms with this stereogram along Z 2-Z ' 2 lines, and (c) of Fig. 2 is the vertical view of the face that is engaged 49 of expression IR infrared rays receiver 50.
Shown in Fig. 2 (a), the shape of the encapsulation of this IR infrared rays receiver 50 (that is, mold formed resin) for example is cuboid.In addition, shown in Fig. 2 (b), this I R infrared rays receiver 50 for example has two photo detectors 10.The sensitive surface 16b separately of above-mentioned two photo detectors 10 configures in the concordant mode of upper surface (that is, this side of back side 36b of the 2nd lead frame 36) with encapsulation.And in this IR infrared rays receiver 50, lead frame 30 comprises the 1st lead frame 31 and the 2nd lead frame 36, and above-mentioned the 1st lead frame 31 and the 2nd lead frame 36 combine and consisted of 1 lead frame 30.
In addition, in this IR infrared rays receiver 50,1 face in 4 sides is the face that is engaged that is engaged with on the surperficial 1a of circuit board 1.Particularly, shown in Fig. 2 (a) and Fig. 2 (c), the side of IR infrared rays receiver 50, that is, the face that the side 36c of the side 31c of the 1st lead frame 31 and the 2nd lead frame 36 is exposed is to be engaged face 49.Be engaged in the face 49 at this, the side 31c of the 1st lead frame 31 that exposes and the side 36c of the 2nd lead frame 36 for example are bonded on part on the surperficial 1a of circuit board 1 by scolding tin 3, are the parts of effect that plays the outside terminal for connecting section of IR infrared rays receiver 50.
In addition, in this IR infrared rays receiver 50, a plurality of outside terminal for connecting 31c of section, 36c are separately to configure overlooking when observing in a side that is positioned at the face of being engaged 49 and the mode that is mutually symmetrical across the opposite side that is centered close to a side opposite with this side that is engaged face 49.Particularly, shown in Fig. 2 (c), shape, size and the configuration mode thereof of shape, size and the configuration mode thereof of the 1st outside terminal for connecting 31c of section and the 2nd outside terminal for connecting 36c of section be the left and right symmetrically configuration centered by center line (imaginary line) L that is engaged face 49.Like this, a plurality of outside terminal for connecting 31c of section, each self-regulation of 36c are configured in the face of being engaged 49 well.Thus, in the operation of soldering described later, can keep the balance of the moment that the physical property etc. because of scolding tin causes, namely can suppress the generation of so-called Manhattan phenomenon.
(1.2.1) structure of photo detector
(a) of Fig. 3 and (b) of Fig. 3 are the figure of the structure example of expression photo detector 10, and (a) of Fig. 3 is the figure of the surperficial 16a side of expression photo detector 10, and (b) of Fig. 3 is the figure of the section of expression photo-electric conversion element 13.Photo detector 10 shown in Fig. 3 (a) for example is the induction element for detection of infrared ray (IR), and photo detector 10 has the light transmission substrate 11 that sees through for IR and the light accepting part 12 that is formed on the surperficial 16a side of this light transmission substrate 11.
In above-mentioned light transmission substrate 11 and light accepting part 12, the GaAs substrate is used as light transmission substrate 11.In addition, except the GaAs substrate, can example such as the substrate such as the semiconductor substrate such as Si, InAs, InP, GaP, Ge or GaN, AlN, sapphire substrate, glass substrate.Adopt such substrate, the light that can make the specific wavelengths such as infrared ray sees through to surperficial 16a expeditiously from the back side 16b of light transmission substrate 11.In addition, light accepting part 12 has a plurality of photo-electric conversion elements 13, is used for utilizing photo-electric conversion element 13 to carry out pad 14, the wiring 15 of the signal of telecommunication output that light-to-current inversion forms.Photo-electric conversion element 13 all is the photodiode of quantum type, and photo-electric conversion element 13 is connected in series by wiring 15.The quantity of the photo-electric conversion element 13 that is connected is larger, and the electromotive force of generation is larger, and is higher as the sensitivity of transducer.
Shown in Fig. 3 (b), photo-electric conversion element 13 for example comprises: be formed on such N-shaped compound semiconductor layer (n layer) 13a of the I nSb that comprises indium (ln) and antimony (Sb) on the light transmission substrate 11, be formed on compound semiconductor layer (п layer) 13b of the non-doping on the n layer 13a, be formed on this п layer 13b and the energy gap AlInSb such compound semiconductor layer 13c larger than the energy gap of n layer 13a and п layer 13b, be doped with p-type compound semiconductor layer (p layer) 13d of the impurity of p-type with being formed on the upper and high concentration of this compound semiconductor layer 13c.Like this, can detect the infrared ray of 2000nm～7400nm by stacking gradually n layer 13a, п layer 13b, the energy gap compound semiconductor layer 13c larger than n layer 13a and п layer 13b, photo-electric conversion element 13 that p layer 13d consists of.
Pad 14 shown in Fig. 3 (a) is to export and arrange for the signal of telecommunication that the opto-electronic conversion that will utilize light accepting part 12 obtains.This pad 14 for example has a pair of pad electrode 14a and the pad electrode 14b that configures separated from each otherly.Between one end of pad electrode 14a and the row that consisted of by a plurality of photo-electric conversion elements 13 and, utilize respectively wiring 15 to be electrically connected between the other end of another pad electrode 14b and above-mentioned row.
In addition, in this photo detector 10, pad 14 be configured in photo detector 10 the surface relatively by in paracentral a part of scope (central part).In addition, a plurality of photo-electric conversion elements 13 be configured in this pad 14 around.Adopt such configuration, when the welding of the enterprising line lead of pad electrode 14a, 14b, even have exert pressure, ultrasonic wave, light transmission substrate 11 is not fragile such advantage also.In addition, because light transmission substrate 11 is not fragile, therefore, can enough sufficient pressure, the ultrasonic wave wire-bonded that will be made of Au etc. is in pad electrode 14a, 14b.Therefore, can be more reliably with wire bonding in pad electrode 14a, 14b, can improve the reliability of wire bonds.
(1.2.2) structure of lead frame
(a) of Fig. 4 and (b) of Fig. 4 are the vertical views of structure example of the 1st lead frame 31 of expression the 1st execution mode of the present utility model.The surperficial 31a of (a) expression the 1st lead frame 31 of Fig. 4, the back side 31b of (b) expression the 1st lead frame 31 of Fig. 4.The 1st lead frame 31 shown in (a) of Fig. 4 and (b) of Fig. 4 is such as being to process by the plating (gold-plated) that utilizes photoetching technique optionally copper (Cu) plate to be carried out etching respectively from the surperficial 31a of the 1st lead frame 31 and these both sides of back side 31b and to implement nickel (Ni)-palladium (Pd)-Jin (Au) etc. to form.
In (a) of Fig. 4, the region representation of the white in the 1st lead frame 31 is with the 1st breakthrough part 32 that connects between surperficial 31a and the back side 31b, carried out zone (that is, the half-etched regions) 33a that etches partially from this side of surperficial 31a with the region representation of shade.In addition, the region representation of grey when carrying out etching by utilizing photoresist etc. that surperficial 31a is protected and not etched zone (, non-etching area) 34a.
Equally, in (b) of Fig. 4, region representation the 1st breakthrough part 32 of the white in the 1st lead frame 31 has carried out the half-etched regions 33b that etches partially from this side of back side 31b with the region representation of shade.In addition, the region representation of grey when etching by utilizing photoresist etc. that back side 31b is protected and not etched non-etching area 34b.In addition, the peripheral part of the 1st lead frame 31 shown in Fig. 4 (a) and Fig. 4 (b) is the zones (be called and cut off width) 35 that utilize cutting knife etc. to cut off in following cutting action.
(a) of Fig. 5 and (b) of Fig. 5 are the vertical views of structure example of the 2nd lead frame 36 of expression the 1st execution mode of the present utility model.The surperficial 36a of (a) expression the 2nd lead frame 36 of Fig. 5, the back side 36b of (b) expression the 2nd lead frame 36 of Fig. 5.The 1st lead frame 31 shown in (a) of the 2nd lead frame 36 shown in (a) of Fig. 5 and (b) of Fig. 5 and Fig. 4 and (b) of Fig. 4 is same, such as being to process by the plating that utilizes photoetching technique optionally C u plate to be carried out etching respectively from the surperficial 36a of the 2nd lead frame 36 and these both sides of back side 36b and to implement Ni-Pd-Au etc. to form.
In (a) of Fig. 5, the region representation of the white in the 2nd lead frame 36 is the 2nd breakthrough part 37 that connects between surperficial 36a and the back side 36b, carried out the half-etched regions 38a that etches partially from this side of surperficial 36a with the region representation of shade.In addition, the region representation of grey when carrying out etching by utilizing photoresist etc. that surperficial 36a is protected and not etched non-etching area 39a.
Equally, in (b) of Fig. 5, region representation the 2nd breakthrough part 37 of the white in the 2nd lead frame 36 has carried out the half-etched regions 38b that etches partially from this side of back side 36b with the region representation of shade.In addition, the region representation of grey when carrying out etching by utilizing photoresist etc. that back side 36b is protected and not etched non-etching area 39b.In addition, the peripheral part of the 2nd lead frame 36 shown in Fig. 5 (a) and Fig. 5 (b) has the cut-out width 35 that utilizes cutting knife etc. to cut off in following cutting action.
(a) of (a) by comparison diagram 4 and (b) of Fig. 4 and Fig. 5 and (b) of Fig. 5 are as can be known, the 1st breakthrough part 32 of the 1st lead frame 31 and the 2nd breakthrough part 37 of the 2nd lead frame 36 with overlook shape when observing (, flat shape) mutually the same and, form overlooking the also mutually the same mode of length when observing (, length in length and breadth).Therefore, if the 1st lead frame 31 and the 2nd lead frame 36 are piled up, then above-mentioned two breakthrough parts 32,37 coincide and have consisted of a continuous breakthrough part 51 (for example, with reference to following Fig. 8 (a) and (b) of Fig. 8).
This breakthrough part 51 overlook shape when observing and size (, size in length and breadth) and the 1st breakthrough part 32, the 2nd breakthrough part 37 is all identical.In addition, the degree of depth of this breakthrough part 51 is degree of depth that the 1st, the 2nd breakthrough part 32,37 degree of depth is separately added up mutually.That is, by making up the 1st lead frame 31 and the 2nd lead frame 36, form darker (that is, depth-to-width ratio the is larger) breakthrough part 51 of the more narrow and deep degree of width.
(1.2.3) structure of lid
(a) of Fig. 6 is the vertical view of structure example of the lid 55 of expression the 1st execution mode of the present utility model, and (b) of Fig. 6 dissects the cutaway view that this vertical view forms along Y6-Y ' 6 lines.
Shown in Fig. 6 (a) and Fig. 6 (b), this lid 55 is for example to overlook shape when the observing shape when overlooking observation with being encapsulated in of IR infrared rays receiver 50 identical, and comprise and have the size identical with IR infrared rays receiver 50 (in fact, in order to make lid be easy to be installed on encapsulation, be than the large size to a certain degree of encapsulation) flat part 56 and be located at the guide portion 59 of the periphery of this flat part 56.Be provided with the peristome 57 of perforation in the part corresponding with photo detector of this flat part 56 (that is, when lid 55 being installed on encapsulation, the part relative with the sensitive surface of photo detector).
In this embodiment, as mentioned above, preparing has two photo detectors, therefore, also prepares to have two peristomes 57 corresponding with these two photo detectors.That is, shown in Fig. 6 (a), has the peristome 57 of the 1st peristome 57 and the 2nd.In addition, above-mentioned two peristomes 57 have separately be used to the recess 58 of accommodating optical light filter.This lid 55 is that material more than 250 ℃ consists of by the liquid crystal polymer that is used for injection mo(u)lding and heat distortion temperature for example.Thus, the counterflow condition (for example 260 ℃ of furnace temperature, 10 seconds time) in the time of can bearing installation.
In addition, shown in Fig. 1 (a), when making this lid 55 cover encapsulation, utilize in 4 sides that guide portion 59 will encapsulate, 3 sides coverings except being engaged face 49.Thus, light can not entered from the sensitive surface side leakage of this 3 side direction photo detector 10 of 3 sides of encapsulation.In addition, also utilize guide portion 59 to determine that lid 55 with respect to the installation site of encapsulation, therefore, is easy to install lid 55.
(1.2.4) structure of optical light filter
Optical light filter 20 shown in (a) of Fig. 1 and (b) of Fig. 1 is the optical light filters with function that the light selecting performance ground (that is, transmitance is higher) that makes desirable wave-length coverage sees through.For example, this optical light filter 20 has the function that infrared ray is seen through.
Perhaps, this optical light filter 20 also can be the optical light filter with function that the infrared ray that only makes the specific wave-length coverage among the infrared ray sees through.For example, optical light filter 20 is the films that are formed on this optical component with comprising optical component and multilayer, and the optical light filter with impervious function of infrared ray of the wavelength that makes long wavelength, short wavelength or long wavelength, these both sides of short wavelength, combine with the above-mentioned function that sees through, as a result, also can be the optical light filter with function that the infrared ray that only makes specific wavelength sees through.
Both can exercise the function that the infrared ray that only makes specific wavelength sees through with 1 this optical light filter 20, and also can exercise the function that the infrared ray that only makes specific wavelength sees through with a plurality of optical light filters 20 according to different situations.In addition, as the material of this optical component, can use silicon (Si), glass (SiO 2), sapphire (Al 2O 3), Ge, ZnS, ZnS e, CaF 2, BaF 2The material that sees through Deng the infrared ray that makes regulation in addition, as by the thin-film material of evaporation to this optical component, can use silicon (Si), glass (SiO 2), sapphire (Al 2O 3), Ge, ZnS, TiO 2, MgF 2, SiO 2, ZrO 2, Ta 2O 5Deng.In addition, on optical component, both can with layeredly stacked have dielectric multilayer film filter that dielectric with different refractive indexes forms take on the surface of optical component, the back side is produced on two faces of optical component as the thickness structure of different regulations, perhaps, also can only be formed on the face.In addition, in order to prevent unwanted reflection, also antireflection film can be formed on surface, these two faces of the back side, perhaps also can be formed on the top layer of a face.
In addition, in this embodiment, shown in Fig. 1 (a) and Fig. 1 (b), be provided with accordingly two optical light filters 20 with the number of photo detector 10.At this, (that is, the 1st optical light filter) in two optical light filters 20 is different with another (that is, the 2nd optical light filter) optic characteristic separately.For example, the 1st optical light filter 20 is optical light filters that the infrared ray of the 1st wave-length coverage (long wavelength) is optionally seen through, and the 2nd optical light filter 20 is optical light filters that the infrared ray of the 2nd wave-length coverage (short wavelength) is optionally seen through.Thus, for example, can be based on from the signal of telecommunication of the 1st photo detector 10 output that is coated with the 1st optical light filter 20 with come light intensity, this light wavelength scope of regulation incident from the signal of telecommunication of the 2nd photo detector 10 outputs that are coated with the 2nd optical light filter 20.
Employing has the photoelectrical coupler 100 of above-mentioned structure, and the position relationship between IR light-emitting device 60 and the IR infrared rays receiver 50 is horizontal direction, therefore, can reduce the height of entire system.In addition, from the light of the light-emitting area 61a of IR light-emitting device 60 output directly to the sensitive surface 20a incident of optical light filter 20.IR does not need the reflecting surface for such concavity of the travel direction that changes light between light-emitting device 60 and IR infrared rays receiver 50, therefore, can reduce the part number.
And, adopt this photoelectrical coupler 100, by determining from 60 irradiations of IR light-emitting device and to the intensity of the IR of IR infrared rays receiver 50 incidents and the wave-length coverage of this IR, can be present in the gaseous species on the light path, the concentration of this gas detects.Its reason is, the specific wavelength components that the relative concentration with this gaseous species, this gas of the IR that shines in the specific gas atmosphere gas is answered is absorbed quantitatively.Thus, above-mentioned photoelectrical coupler 100 can be highly suitable for detector etc.The manufacture method of the photoelectrical coupler 100 of the 1st execution mode then, is described.
(1.3) manufacture method of photoelectrical coupler
(b) of Fig. 7～Figure 12 is the process chart of manufacture method of the photoelectrical coupler 100 of expression the 1st execution mode of the present utility model.Fig. 7 is stereogram.In addition, (a) of each figure of Fig. 8～Figure 12 is from the face side of lead frame 30 (more specifically, the surperficial 31a side of the 1st lead frame 31) vertical view of observing, the cutaway view when (b) of each figure dissects respectively each figure (a) along X8-X ' 8～X 12-X ' 12 lines.
As shown in Figure 7, at first, prepare at first the 1st lead frame 31 ', the 2nd lead frame 36 '.At this, the 1st lead frame 31 shown in Fig. 4 (a) and Fig. 4 (b) is made as 1 unit cell pattern, prepare to reach along the longitudinal the lead frame 31 ' that mode that horizontal difference arranges continuously configures with this unit cell pattern when observing overlooking.Equally, the 2nd lead frame 36 shown in Fig. 5 (a) and Fig. 5 (b) is made as 1 unit cell pattern, prepares to reach along the longitudinal the lead frame 36 ' that mode that horizontal difference arranges continuously configures with this unit cell pattern when observing overlooking.
Then, paste adhesive tape 71 at the back side of the 2nd lead frame 36 ' 36b.By pasting adhesive tape 71 in the back side of the 2nd lead frame 36 ' 36b side, become the state that the adhesive layer of adhesive tape 71 exposes from the bottom surface of the 2nd breakthrough part 37 (for example, with reference to (a) of Fig. 5 and (b) of Fig. 5).
In addition, as adhesive tape 71, use to have adhesiveness and have stable on heating resinous band.For adhesiveness, the kind of the paste thinner thickness of preferred adhesive layer.In addition, for thermal endurance, need to be able to bear approximately 150 ℃～200 ℃ temperature.As such adhesion zone 71, can example such as polyimides band.The polyimides band has and bears approximately 280 ℃ thermal endurance.Have so higher stable on heating polyimides band also can bear after mold formed, wire bonds the time the high heat that applies.In addition, as adhesive tape 71, except the polyimides band, also can use following band.
Polyester belt heat resisting temperature, approximately 130 ℃ (still, according to the difference of service condition, heat resisting temperature reaches approximately 200 ℃).
Special teflon (registered trade mark) band heat resisting temperature: approximately 180 ℃
PP S (polyphenylene sulfide) heat resisting temperature: approximately 160 ℃
Glass cloth (glass cloth) heat resisting temperature: approximately 200 ℃
Nomex (registered trade mark) adhesive tape heat resisting temperature: approximately 150～200 ℃
In addition, can be with meta-aramid, crimped paper as adhesive tape 71.
Then, the surperficial 36a at the 2nd lead frame 36 ' configures the 1st lead frame 31 '.At this, make the surperficial 36a of the 2nd lead frame 36 ' relative with the back side 31b of the 1st lead frame 31 ', under this state, the mode that is just going up that is in the 2nd breakthrough part 37 ((a) of Fig. 5 and (b) of Fig. 5 reference) with the 1st breakthrough part 32 (with reference to (a) of Fig. 4 and (b) of Fig. 4) makes the 1st lead frame 31 ' and the 36 ' contraposition of the 2nd lead frame.Then, under the state of this contraposition, at the surperficial 36a of the 2nd lead frame 36 ' configuration the 1st lead frame 31 ' and be fixed.Thus, shown in Fig. 8 (a) and Fig. 8 (b), consisted of lead frame 30 '.
In addition, at this, do not need to utilize cement etc. that the 1st lead frame 31 ' is engaged with the 2nd lead frame 36 '.As long as the mode of relative position dislocation can not occur with the 1st lead frame 31 ' and the 2nd lead frame 36 ' to be pre-fixed.Its reason is, in resin-sealed operation described later, utilizes mold formed resin 45 to fix the 1st lead frame 31 ' and the 2nd lead frame 36 '.As the method that pre-fixes, has routine method described as follows.
That is, as shown in Figure 7, be provided with respectively through hole 73,74 at the peripheral part of the 1st lead frame 31 ' and the peripheral part of the 2nd lead frame 36 '.By making the 1st lead frame 31 ' and the 36 ' contraposition of the 2nd lead frame, above-mentioned through hole 73,74 coincides when overlooking observation.Be respectively equipped with such through hole 73,74 more than two places at the 1st lead frame 31 ' and the 2nd lead frame 36 '.At this, be embedded in respectively in the through hole 73,74 that coincides respectively at many places (for example two places) by selling 75, can with can not occurrence positions the mode of dislocation the 1st lead frame 31 ' and the 2nd lead frame 36 ' are pre-fixed.In addition, carry out after the contraposition, both can carry out arc welding to four bights, also can utilize cement that four bights are engaged.
Then, shown in Fig. 9 (a) and Fig. 9 (b), in the breakthrough part 51 of lead frame 30 ', for example configure respectively two photo detectors 10.At this, configuration the 1st photo detector 10 in the 1st zone in breakthrough part 51 is pasted on adhesive layer as the adhesive tape 71 of the bottom surface of breakthrough part 51 with the sensitive surface 16b of the 1st photo detector 10.In addition, configuration the 2nd photo detector 10 in the 2nd zone in breakthrough part 51 is pasted on adhesive layer as the adhesive tape 71 of the bottom surface of breakthrough part 51 with the sensitive surface 16b of the 2nd photo detector 10.
In addition, when carrying out this stickup, also can form diaphragm (not shown) at the sensitive surface 16b of photo detector 10 in advance.As diaphragm, for example can use photoresist.Such diaphragm is such as being pre-formed before cutting as GaAs substrate of the base material of photo detector 10 etc.
Then, shown in Figure 10 (a) and Figure 10 (b), use lead-in wire 40 to be electrically connected photo detector 10 and lead frames 30 '.At this, at least a portion of the half-etched regions 33a of lead frame 30 ' is as the welding portion of terminal.The lead-in wire 40 that use is made of Au etc. is electrically connected pad electrode 14a, the 14b of the photo detector 10 shown in (a) of this welding usefulness portion of terminal 33a, Fig. 3.
In addition, being connected preferably between photo detector 10 and the lead frame 30 ' carries out towards the mode that pad electrode 14a, the 14b of photo detector 10 stretch out lead-in wire (that is, it seems it is anti-welding from photo detector 10) with portion of terminal 33a with the welding from lead frame 30 '.That is, at first, before the 1st welding of carrying out in the formation of following soldered ball, form salient point (not shown) at pad electrode 14a, the 14b of photo detector 10 in advance.Then, follow the formation of soldered ball with portion of terminal 33a and the 1st that carries out welding in the welding of lead frame 30 ', on the salient point of pad electrode 14a, the 14b of photo detector 10, carry out the 2nd welding.Adopt such method, the welding of lead frame 30 ' in the position lower than pad electrode 14a, the 14b of photo detector 10, therefore, can reduce the height of the lead-in wire after the welding with this orientation of portion of terminal 33a in cutaway view.
Then, shown in Figure 11 (a) and Figure 11 (b), at the upper surface side configuration mold 77 of lead frame 30 ', and at the lower face side configuration bed die 78 of lead frame 30 '.Then, utilize mold 77 and bed die 78 to sandwich lead frame 30 ', from sidepiece to mold 77 and the space that clips of bed die 78 in injection molding shaping resin 45, fill in the space that mold 77 and bed die 78 clip.Thus, carry out resin-sealed to photo detector 10 and lead-in wire 40.
In addition, as mold formed resin 45, for example can use epoxy resin.In addition, in this resin-sealed operation, non-etching area 34a with the upper surface side of the 1st lead frame 31 ' seamlessly contacts at mold 77, and, under bed die 78 and the state that adhesive tape 71 seamlessly contacts, supply with mold formed resin 45 from the sidepiece in the space that the matched moulds by two moulds forms.Therefore, carry out resin-sealed after, become the non-etching area 34a of lead frame 30 ' and the state that adhesive tape 71 exposes from mold formed resin 45 respectively.
Then, remove adhesive tape 71 from the lower face side of lead frame 30 '.Remove after the adhesive tape 71, as required, curing after implementing, wet type air blast (wet bla st).And, be formed with in the situation of not shown diaphragm at the sensitive surface 16b of photo detector 10, remove this diaphragm.Then, utilize cutter sweep to cut mold formed resin 45 and lead frame 30 ', cut off at cut-out width 35.Thus, shown in Figure 12 (a) and Figure 12 (b), mold formed resin 45 and lead frame 30 ' are cut into the product of monomer, carry out encapsulationization.Then, the lid that uses cement will contain optical light filter is installed on each this encapsulation.Thus, the sensitive surface of photo detector is covered by optical light filter, has finished IR infrared rays receiver 50 shown in Figure 2.
Then, as mentioned above, on the surperficial 1a that the IR infrared rays receiver 50 made and IR light-emitting device 60 are installed in circuit board 1.This installation procedure for example is to be undertaken by the soldering of reflux type.For example, the presumptive area print solder paste that IR infrared rays receiver 50 be used for to be installed on the surperficial 1a of circuit board 1 in advance.Equally, in the presumptive area that IR light-emitting device 60 be used for to be installed also print solder paste in advance.Then, configure respectively IR infrared rays receiver 50 and IR light-emitting device 60 in each presumptive area that is printed with the scolding tin paste on the surperficial 1a of circuit board 1.Then, under the state that disposes respectively IR infrared rays receiver 50 and IR light-emitting device 60, heating circuit board 1 makes melts soldering tin.Thus, by scolding tin IR infrared rays receiver 50 and IR light-emitting device 60 are installed on the surperficial 1a of circuit board 1.Through such operation, finished the photoelectrical coupler 100 shown in (b) of Fig. 1 (a) and Fig. 1.
As described above, adopt the 1st execution mode of the present utility model, the position relationship between I R light-emitting device 60 and the IR infrared rays receiver 50 is not above-below direction, but therefore horizontal direction, can reduce the height of entire system.In addition, IR infrared rays receiver 50 and IR light-emitting device 60 are installed on the surperficial 1a of general circuit board 1, therefore, also are easy to carry out the contraposition of IR infrared rays receiver 50 and I R light-emitting device 60.
In addition, from the light of the light-emitting area 61a of IR light-emitting device 60 output directly to the sensitive surface incident of optical light filter 20.Between IR light-emitting device 60 and IR infrared rays receiver 50, do not need to change the reflecting surface of the such concavity of the travel direction of light, therefore, can reduce the part number.And because do not need the reflecting surface of concavity, therefore, scattering can not occur at this reflecting surface in light.Thereby, can not cause the light path from the light-emitting area to the sensitive surface to broaden because of the scattering that light occurs at reflecting surface yet.
In addition, shown in Fig. 2 (c), in the face that is engaged 49 of photoelectrical coupler 100, the balance row disposes a plurality of outside terminal for connecting 31c of section, 36c well about overlooking when observing.Thus, in the operation that is used for IR infrared rays receiver 50 is installed in the soldering on the surperficial 1a of circuit board 1, the torque keeping that causes because of the physical property of scolding tin etc. balance can be got, the generation of so-called Manhattan phenomenon can be suppressed.
(2) the 2nd execution modes
In the above-described first embodiment, for example, shown in Fig. 6 (b), the situation that IR infrared rays receiver 50 is had lid 55 and contain optical light filter in the peristome 57 of the perforation of this lid 55 is illustrated.But in the utility model, IR infrared rays receiver 50 is not that certain needs have lid 55.And optical light filter is not that certain needs are housed in the lid 55 yet.
(a) of Figure 13 is the face to face surface installing type of expression the 2nd execution mode of the present utility model and the vertical stereogram of the structure example of the photoelectrical coupler 200 of mount type, and (b) of Figure 13 dissects the cutaway view that this stereogram forms along Z 13-Z ' 13 lines.Shown in Figure 13 (a) and Figure 13 (b), this photoelectrical coupler 200 comprises: circuit board 1; IR light-emitting device 60, it is bonded on the surperficial 1a of this circuit board 1; IR infrared rays receiver 150, it is bonded on the position that separates with IR light-emitting device 60 on the surperficial 1a of circuit board 1; The housing of not shown light-proofness (for example, with reference to Fig. 1 (a)).At this, IR infrared rays receiver 150 equally for example is sensing device with the I R infrared rays receiver 50 that illustrates in the 1st execution mode, is that the IR that will receive converts the device that the signal of telecommunication is also exported the converted signal of telecommunication to.
In this photoelectrical coupler 200, be the structure of IR infrared rays receiver with the difference of the photoelectrical coupler 100 that in the 1st execution mode, illustrates.That is, shown in Figure 13 (a) and Figure 13 (b), on this IR infrared rays receiver 150, lid is not installed.And optical light filter 20 is installed (stacked) on sensitive surface 16b in the mode of the sensitive surface 16b of covering photo detector 10, and optical light filter 20 is molded shaping resin 45 with photo detector 10 and covers.And the sensitive surface 20a of this optical light filter 20 exposes from mold formed resin 45, and with the back side 36b of the 2nd lead frame 36 be same plane (that is, in the face of neat).
In addition, in this photoelectrical coupler 200, on the surperficial 1a of circuit board 1, the light-emitting area 61a of the illuminating part 61 of IR light-emitting device 60 and the sensitive surface of IR infrared rays receiver 150 (in this embodiment, the sensitive surface 20a that exposes from mold formed resin 45 of optical light filter 20) are relatively.
In such structure, also same with the 1st execution mode, the position relationship between IR light-emitting device 60 and the IR infrared rays receiver 150 is horizontal direction, therefore, can reduce the height of entire system.In addition, from the light of the light-emitting area 61a of IR light-emitting device 60 output directly to the sensitive surface incident of optical light filter 20.Photoelectrical coupler 200 is surface installing types face to face, does not need to change the reflecting surface of the such concavity of the travel direction of light between IR light-emitting device 60 and IR infrared rays receiver 50, and does not also need lid.Therefore, can further reduce for the part number that consists of photoelectrical coupler.
In addition, in the 2nd execution mode, the magnitude relationship between the dimensions length L2 of the thickness direction of IR infrared rays receiver 150 and the dimensions length H2 of short transverse also is L2＜H2, is vertical mount type.Thus, can seek to reduce erection space.The manufacture method of the photoelectrical coupler 200 of the 2nd execution mode then, is described.
(e) of (a)～Figure 14 of Figure 14 is the cutaway view of manufacture method of the photoelectrical coupler 200 of expression the 2nd execution mode of the present utility model.In the 2nd execution mode, make the 1st lead frame 31 ' and the 2nd lead frame 36 ' overlapping, arrive for identical with the 1st execution mode till the operation that consists of 1 lead frame 30 '.Shown in Figure 14 (a), consisting of like that lead frame 30 ' afterwards, shown in Figure 14 (b), the duplexer that configuration is laminated by photo detector 10 and optical light filter 20 in the breakthrough part 51 of lead frame 30 '.
At this, the sensitive surface 20a of optical light filter 20 is sticked in the zone as the bottom surface of breakthrough part 51 in fusible of the having of adhesive tape 71.In addition, when carrying out this stickup, also can form diaphragm (not shown) at the sensitive surface 20a of optical light filter 20 in advance.As diaphragm, for example can use photoresist.For example, can before being cut, the optical component as the base material of optical light filter 20 be pre-formed such diaphragm.
In operation after this, except the installation procedure of lid, identical with the 1st execution mode.That is, shown in Figure 14 (c), use lead-in wire 40 to be electrically connected photo detector 10 and lead frame 30 '.At this, at least a portion among the half-etched regions 33a of lead frame 30 ' is as the welding portion of terminal.Use lead-in wire 40 to be electrically connected pad electrode 14a, the 14b that this welds the photo detector 10 shown in (a) that uses portion of terminal 33a, Fig. 3.
Then, shown in Figure 14 (d), utilize mold 77 and bed die 78 to sandwich lead frame 30 ', from sidepiece to mold 77 and the space that clips of bed die 78 in injection molding shaping resin 45, fill in mold 77 space that also bed die 78 clips.Thus, carry out resin-sealed to photo detector 10, optical light filter 20, lead-in wire 40.Then, remove adhesive tape 71 from the lower face side of lead frame 30 ', implement as required the processing same with the 1st execution mode.Then, utilize cutter sweep to cut mold formed resin 45 and lead frame 30 ', cut off at cut-out width 35.Thus, shown in Figure 14 (e), mold formed resin 45 and lead frame 30 ' are cut into the product of monomer, carry out encapsulationization, finished IR infrared rays receiver 150.
Then, as mentioned above, on the surperficial 1a that the IR infrared rays receiver 150 made and IR light-emitting device 60 are installed in circuit board 1.This installation procedure and the 1st execution mode are same, for example are to be undertaken by the soldering of reflux type.Through such operation, finished the photoelectrical coupler 200 shown in (b) of Figure 13 (a) and Figure 13.
(3) the 3rd execution modes
In the above-described first embodiment, for example shown in Fig. 1 (b), to being illustrated by the 1st lead frame 31 and the 2nd lead frame 36 overlapping situations that consist of lead frame 30.But in the utility model, lead frame may not necessarily need to be made of a plurality of lead frames.Can not a plurality of also, but 1 lead frame.
Figure 15 is the face to face surface installing type of expression the 3rd execution mode of the present utility model and the vertical cutaway view of the structure example of the photoelectrical coupler 300 of mount type.As shown in figure 15, this photoelectrical coupler 300 comprises: circuit board 1; IR light-emitting device 60, it is bonded on the surperficial 1a of this circuit board 1; IR infrared rays receiver 250, it is bonded on the position that separates with IR light-emitting device 60 on the surperficial 1a of circuit board 1; The housing of not shown light-proofness (for example, with reference to Fig. 1 (a)).At this, IR infrared rays receiver 250 equally for example is sensing device with the IR infrared rays receiver 50 that illustrates in the 1st execution mode, is that the IR that will receive converts the device that the signal of telecommunication is also exported the converted signal of telecommunication to.
In this photoelectrical coupler 300, be the structure of IR infrared rays receiver with the difference of the photoelectrical coupler 100 that in the 1st execution mode, illustrates.That is, as shown in figure 15, the lead frame 130 of IR infrared rays receiver 250 is not to be made of a plurality of lead frames, but consisted of by 1 lead frame.In such structure, also same with the 1st execution mode, the position relationship between IR light-emitting device 60 and the IR infrared rays receiver 150 is horizontal direction, can reduce the height of entire system.In addition, from the light of the light-emitting area 61a of IR light-emitting device 60 output directly to the sensitive surface incident of optical light filter 20.Photoelectrical coupler 300 is surface installing types face to face, does not need to change the reflecting surface of the such concavity of the travel direction of light between IR light-emitting device 60 and IR infrared rays receiver 50, therefore, can reduce the part number.
In addition, in the 3rd execution mode, the magnitude relationship between the dimensions length L3 of the thickness direction of IR infrared rays receiver 250 and the dimensions length H3 of short transverse also is L3＜H3, is vertical mount type.Thus, can seek to reduce erection space.
(a) of Figure 16 and (b) of Figure 16 are the vertical views of structure example of the lead frame 130 of expression the 3rd execution mode of the present utility model.The surperficial 130a of (a) expression lead frame 130 of Figure 16, the back side 130b of (b) expression lead frame 130 of Figure 16.Lead frame 130 shown in (a) of Figure 16 and (b) of Figure 16 is such as being to form by utilizing photoetching technique optionally copper (Cu) plate etching and the plating (gold-plated) of implementing nickel (Ni)-palladium (Pd)-Jin (Au) etc. to be processed respectively from the surperficial 130a of lead frame 130 and these both sides of back side 130b.
In (a) of Figure 16, the region representation of the white in the lead frame 130 is with the breakthrough part 151 that connects between surperficial 130a and the back side 130b, carried out zone (that is, the half-etched regions) 133a that etches partially from this side of surperficial 130a with the region representation of shade.In addition, the region representation of grey when carrying out etching by utilizing photoresist etc. that surperficial 130a is protected and not etched zone (, non-etching area) 134a.
Equally, in (b) of Figure 16, the region representation breakthrough part 151 of the white in the lead frame 130, the region representation of grey when carrying out etching by utilizing photoresist etc. that back side 130b is protected and not etched non-etching area 134b.In addition, 130b does not have half-etched regions at the back side of lead frame 130, is flat condition.In addition, the peripheral part of the lead frame 130 shown in Figure 16 (a) and Figure 16 (b) is the zones (that is, cutting off width) 135 that utilize cutting knife etc. to cut off in following cutting action.
(e) of (a)～Figure 17 of Figure 17 is the cutaway view of manufacture method of the photoelectrical coupler 300 of expression the 3rd execution mode of the present utility model.Shown in Figure 17 (a), at first, paste adhesive tape 71 at the back side of lead frame 130 ' 130b at first.Then, shown in Figure 17 (b), configuration photo detector 10 in the breakthrough part 151 of lead frame 130 '.At this, the sensitive surface 16b of photo detector 10 is sticked in the zone as the bottom surface of breakthrough part 51 in fusible of the having of adhesive tape 71.In addition, same with the 1st execution mode, when carrying out this stickup, also can form diaphragm (not shown) at the sensitive surface 16b of photo detector 10 in advance.
Then, shown in Figure 17 (c), use lead-in wire 40 to be electrically connected photo detector 10 and lead frame 130 '.At this, at least a portion among the half-etched regions 133a of lead frame 130 ' is as the welding portion of terminal.Use lead-in wire 40 to be electrically connected pad electrode 14a, the 14b that this welds the photo detector 10 shown in (a) that uses portion of terminal 133a, Fig. 3.Then, shown in Figure 17 (d), utilize mold 77 and bed die 78 to sandwich lead frame 130 ', from sidepiece to mold 77 and the space that clips of bed die 78 in injection molding shaping resin 45, fill in the space that mold 77 and bed die 78 clip.Thus, carry out resin-sealed to photo detector 10 and lead-in wire 40.
Then, remove adhesive tape 71 from the lower face side of lead frame 130 ', implement as required the processing same with the 1st execution mode.Then, utilize cutter sweep to cut mold formed resin 45 and lead frame 130 ', cut off at cut-out width 135.Thus, shown in Figure 17 (e), mold formed resin 45 and lead frame 130 ' are cut into the product of monomer, carry out encapsulationization, finished IR infrared rays receiver 250.
Then, as mentioned above, on the surperficial 1a that the IR infrared rays receiver 250 made and IR light-emitting device 60 are installed in circuit board 1.This installation procedure and the 1st execution mode are same, for example are to be undertaken by the soldering of reflux type.Through such operation, finished photoelectrical coupler shown in Figure 15 300.
(4) other execution mode
The side 31c of the 1st lead frame 31 that (4.1) in the above-described first embodiment, illustrated in the face that is engaged 49 of IR infrared rays receiver 50, exposes and the side 36c of the 2nd lead frame 36 have respectively the function as outside terminal for connecting section.At this, in Fig. 2 (a) and Fig. 2 (c), illustrate the situation that the outside terminal for connecting 31c of section, 36c are separated from each other in being engaged face 49.But in the utility model, the said external terminal for connecting 31c of section, 36c also can be connected with each other.
That is, as shown in figure 18, in being engaged face 49, an adjacent outside terminal for connecting 31c of section also can link to each other with another outside terminal for connecting 36c of section.Adopt such structure, increased the zone of carrying out soldering (that is, the gross area of outside terminal for connecting section), therefore, can make IR infrared rays receiver 50 firmer being bonded on the circuit board 1.
In addition, the mode shown in (a) that mode shown in Figure 180 for example can be by being altered to respectively Figure 19 from the mode shown in Fig. 4 (b) and Fig. 5 (a) and (b) of Figure 19 realizes the back side 31b of the 1st lead frame 31 and the surperficial 36a of the 2nd lead frame.On the other hand, the surperficial 31a of the 1st lead frame 31 and the back side 36b of the 2nd lead frame do not have variation point, with identical shown in (a) of Fig. 4 (b) and Fig. 5.
(4.2) in addition, in the above-described first embodiment, for example, in (b) of Fig. 1, illustrate back side 36b and near the lid 55 contacted situation surperficial 1a of circuit board 1 of the 2nd lead frame.But, in the utility model, for example, shown in Figure 20 (a), also can near the surperficial 1a of circuit board 1, separate between the back side 36b of the 2nd lead frame 36 and the lid 55.
That is the part relative with lead frame 30 that, also can be near the part the surperficial 1a at circuit board 1 of lid 55 is provided with recess (slit) 56.If adopt such structure, then in the operation of soldering, scolding tin 3 can be easy to from the side of the 2nd lead frame 36 (that is, outside terminal for connecting section) 36c and spread to the back side 36b side of the 2nd lead frame 36.Utilize scolding tin 3 articulate bonding parts to enlarge, therefore, I R infrared rays receiver 50 more firmly is bonded on the circuit board 1.
In addition, shown in Figure 20 (b), this recess 56 also can extend the mode that arranges and arrive guide portion 59 along directions X with this recess 56 and arrange.Adopt such structure, for example, shown in the arrow of Figure 20 (b), can utilize scolding tin 3 articulate engagement states by Visual Confirmation.
(4.3) in addition, in each above-mentioned execution mode, illustrated that I R infrared rays receiver 50,150,250 has the situation of the photo detector 10 of two one species separately.Yet in the utility model, the number of the photo detector that 1 IR infrared rays receiver has is not defined to two.The number of the photo detector that 1 IR infrared rays receiver has both can be more than 3, perhaps, and can being 1.Can at random set according to desirable function the number of the photo detector that 1 IR infrared rays receiver has.
(4.4) in addition, in each above-mentioned execution mode, illustration can detect the ultrared photo detector of 2000nm～7400nm.But in the utility model, photo detector is not defined to the detection that is applied to IR.In the utility model, photo detector for example both can be only for detection of ultraviolet element, perhaps, also can be the element for detection of ultraviolet ray and these both sides of infrared ray.Perhaps, photo detector also can be the element for detection of the light outside ultraviolet ray or the ultrared wave-length coverage.
Enumerate an example, by stack gradually at the light transmission substrate n layer, π layer, n layer, energy gap greater than the compound semiconductor layer of the energy gap of π layer, photo-electric conversion element 13 that the p layer consists of in, if in the n layer, do not use I nSb, but use the material of such other of AlN, InGaP, InGaAsP, InAs Sb, then can make can to from wavelength approximately the ultraviolet ray of 250nm to the about photo detector that detects of the infrared ray of 12 μ m of wavelength.In this case, can provide that have can be to the photoelectrical coupler of the infrared rays receiver that detects from the ultraviolet ray to the infrared ray.
In addition, in the case, optical light filter also for example both can be to have the optical light filter that only makes the function that ultraviolet ray sees through, and perhaps, also can be the optical light filter that ultraviolet ray and these both sides of infrared ray are seen through.Can at random set the wave-length coverage that optical light filter can see through according to the wave-length coverage that photo detector can detect.
Description of reference numerals
1, circuit board; 1a, circuit board surface; 10, photo detector (the 1st photo detector, the 2nd photo detector); 11, light transmission substrate; 12, light accepting part; 13, photo-electric conversion element; 13a, n layer; 13b, π layer; 13c, compound semiconductor layer; 13d, p layer; 14, pad; 14a, 14b, pad electrode; 15, wiring; 16a, surface; 16b, sensitive surface (back side); 20, optical light filter (the 1st optical light filter, the 2nd optical light filter); 20a, sensitive surface; 30, lead frame (stepped construction); 31, the 1st lead frame; 31a, 36a, 130a, surface; 31b, 36b, 130b, the back side; 31c, 36c, side (outside terminal for connecting section); 32, the 1st breakthrough part; 33a, 133a, half-etched regions (welding portion of terminal); 33b, 38a, 37b, half-etched regions; 34a, 34b, 39a, 39b, 134a, 134b, non-etching area; 35,135, cut off width; 36, the 2nd lead frame; 37, the 2nd breakthrough part; 40, lead-in wire; 45, mold formed resin (encapsulation); 46, cement; 49, be engaged face; 50,150,250, IR infrared rays receiver; 51,151, breakthrough part (comprising the 1st zone, the 2nd zone); 55, lid; 56, flat part; 57, peristome (the 1st peristome, the 2nd peristome); 58, recess; 59, guide portion; 60, light-emitting device; 61, illuminating part; 61a, light-emitting area; 71, adhesive tape; 73,74, through hole; 75, pin; 77, mold; 78, bed die; 90, housing; 91, peristome; 100,200,300, photoelectrical coupler.

Claims (10)

1. a photoelectrical coupler is characterized in that,
This photoelectrical coupler comprises:
Circuit board;
Light-emitting device, it is bonded on the face of above-mentioned circuit board;
Infrared rays receiver, it is bonded on the position that separates with above-mentioned light-emitting device on the face of above-mentioned circuit board,
On a face of above-mentioned circuit board, the light-emitting area of above-mentioned light-emitting device is relative with the sensitive surface of above-mentioned infrared rays receiver.
2. photoelectrical coupler according to claim 1 is characterized in that,
Above-mentioned infrared rays receiver has:
Photo detector for detection of light;
Lead frame with breakthrough part;
Lead-in wire;
Sealing,
In this photoelectrical coupler, above-mentioned photo detector is configured in the above-mentioned breakthrough part of above-mentioned lead frame, and the photoelectric conversion part of above-mentioned photo detector is electrically connected by above-mentioned lead-in wire with above-mentioned lead frame,
The sensitive surface of above-mentioned photo detector exposes from the face towards above-mentioned light-emitting device one side of above-mentioned sealing,
And, being engaged on the face on a face that is bonded on above-mentioned circuit board of infrared rays receiver, the side of above-mentioned lead frame exposes from the above-mentioned face that is engaged as a plurality of portion of terminal that the mode with vertical installation is electrically connected with above-mentioned circuit board.
3. photoelectrical coupler according to claim 2 is characterized in that,
Each above-mentioned a plurality of portion of terminal are to be engaged a side of face and to configure across the above-mentioned mode that is mutually symmetrical with the opposite side of the opposite side of an above-mentioned side that is centered close to that is engaged face overlooking when observing above-mentioned.
4. photoelectrical coupler according to claim 2 is characterized in that,
Above-mentioned infrared rays receiver also has:
Lid, it is installed on above-mentioned sealing;
Optical light filter, it is used for covering the sensitive surface of above-mentioned photo detector,
Be provided with the peristome of perforation in above-mentioned lid, above-mentioned optical light filter is housed in the above-mentioned peristome.
5. photoelectrical coupler according to claim 3 is characterized in that,
Above-mentioned infrared rays receiver also has:
Lid, it is installed on above-mentioned sealing;
Optical light filter, it is used for covering the sensitive surface of above-mentioned photo detector,
Be provided with the peristome of perforation in above-mentioned lid, above-mentioned optical light filter is housed in the above-mentioned peristome.
6. the described photoelectrical coupler of each according to claim 2～5 is characterized in that,
Above-mentioned lead frame comprises:
The 1st lead frame, it has the 1st breakthrough part;
The 2nd lead frame, it has the 2nd breakthrough part,
Above-mentioned the 1st leadframe configuration is on above-mentioned the 2nd lead frame, and above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part coincide when overlooking observation,
As above-mentioned breakthrough part, be formed with above-mentioned sealing to overlook the state that disposes above-mentioned photo detector in the zone that coincides when observing at above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part,
The 1st side of above-mentioned the 1st lead frame and the 2nd side of above-mentioned the 2nd lead frame have respectively the above-mentioned sealing of shape of one's own as above-mentioned a plurality of portion of terminal the above-mentioned face that is engaged exposes.
7. according to claim 4 or 5 described photoelectrical couplers, it is characterized in that,
Above-mentioned photo detector comprises the 1st photo detector and the 2nd photo detector,
Above-mentioned optical light filter comprises the 1st optical light filter, the 2nd optical light filter that characteristic is different from the characteristic of above-mentioned the 1st optical light filter,
Above-mentioned breakthrough part comprises the 1st zone, 2nd zone different from the position in above-mentioned the 1st zone, position,
Above-mentioned peristome comprises the 1st peristome, position 2nd peristome different from the position of above-mentioned the 1st peristome,
Above-mentioned the 1st photo detector is configured in above-mentioned the 1st zone,
Above-mentioned the 2nd photo detector is configured in above-mentioned the 2nd zone,
Above-mentioned the 1st optical light filter is housed in above-mentioned the 1st peristome,
Above-mentioned the 2nd optical light filter is housed in above-mentioned the 2nd peristome.
8. photoelectrical coupler according to claim 6 is characterized in that,
Above-mentioned photo detector comprises the 1st photo detector and the 2nd photo detector,
Above-mentioned optical light filter comprises the 1st optical light filter, the 2nd optical light filter that characteristic is different from the characteristic of above-mentioned the 1st optical light filter,
Above-mentioned breakthrough part comprises the 1st zone, 2nd zone different from the position in above-mentioned the 1st zone, position,
Above-mentioned peristome comprises the 1st peristome, position 2nd peristome different from the position of above-mentioned the 1st peristome,
Above-mentioned the 1st photo detector is configured in above-mentioned the 1st zone,
Above-mentioned the 2nd photo detector is configured in above-mentioned the 2nd zone,
Above-mentioned the 1st optical light filter is housed in above-mentioned the 1st peristome,
Above-mentioned the 2nd optical light filter is housed in above-mentioned the 2nd peristome.
9. photoelectrical coupler according to claim 1 is characterized in that,
Above-mentioned infrared rays receiver comprises:
Photo detector, it is for detection of light;
Optical light filter, it is used for covering the sensitive surface of above-mentioned photo detector;
The 1st lead frame, it has the 1st breakthrough part;
The 2nd lead frame, it has the 2nd breakthrough part;
Lead-in wire;
Sealing,
In this photoelectrical coupler, above-mentioned the 1st leadframe configuration is on above-mentioned the 2nd lead frame, and above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part coincide when overlooking observation,
With above-mentioned photo detector and above-mentioned optical light filter be configured in above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part in overlooking the zone that coincides when observing and, photoelectric conversion part on the face of being located at a side opposite to sensitive surface of above-mentioned photo detector and state that above-mentioned lead frame is electrically connected by the above-mentioned lead-in wire above-mentioned sealing that is shaped
The sensitive surface of above-mentioned optical light filter exposes from the exposing to the face in the outside of above-mentioned sealing of formed thereby, and namely the face towards above-mentioned light-emitting device one side from the above-mentioned sealing of formed thereby exposes,
And, the 1st side of above-mentioned the 1st lead frame and the 2nd side of above-mentioned the 2nd lead frame expose from the exposing to the face in the outside of above-mentioned sealing of formed thereby respectively as a plurality of portion of terminal that are used for being electrically connected with above-mentioned circuit board, and namely the face that is engaged on a face that will be bonded on above-mentioned circuit board of the above-mentioned sealing of formed thereby exposes.
10. photoelectrical coupler according to claim 9 is characterized in that,
Above-mentioned photo detector comprises the 1st photo detector and the 2nd photo detector,
Above-mentioned optical light filter comprises that the characteristic of the 1st optical light filter be used to the sensitive surface that covers above-mentioned the 1st photo detector, characteristic and above-mentioned the 1st optical light filter is different and is used for covering the 2nd optical light filter of the sensitive surface of above-mentioned the 2nd photo detector,
Above-mentioned the 1st breakthrough part and above-mentioned the 2nd breakthrough part be in the 2nd different zone of position of overlooking the zone that coincides when observing and comprise the 1st zone, position and above-mentioned the 1st zone,
Above-mentioned the 1st photo detector and above-mentioned the 1st optical light filter are configured in above-mentioned the 1st zone,
Above-mentioned the 2nd photo detector and above-mentioned the 2nd optical light filter are configured in above-mentioned the 2nd zone.
CN2012201018579U 2011-03-18 2012-03-16 Photoelectric coupler Expired - Lifetime CN202736912U (en)

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