CN112992955B - Chip packaging structure, manufacturing method thereof and electronic equipment - Google Patents

Chip packaging structure, manufacturing method thereof and electronic equipment Download PDF

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Publication number
CN112992955B
CN112992955B CN202110525154.2A CN202110525154A CN112992955B CN 112992955 B CN112992955 B CN 112992955B CN 202110525154 A CN202110525154 A CN 202110525154A CN 112992955 B CN112992955 B CN 112992955B
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light
chip
conductive
layer
photosensitive
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CN112992955A (en
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吴春悦
何正鸿
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Forehope Electronic Ningbo Co Ltd
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Forehope Electronic Ningbo Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration

Abstract

The application provides a chip packaging structure, a manufacturing method thereof and electronic equipment, and relates to the technical field of semiconductors. In the chip packaging structure that this application provided, the sensitization chip leads electrical pillar and rewiring layer through first leading electrical pillar, second on the printing opacity piece, is connected with the circuit of base plate to it leads electrical pillar and second to have set up the first leading electrical pillar of filling glue parcel. The structure avoids connecting the photosensitive chip and the substrate in a routing mode, so that the technical problem in the traditional routing process is not easy to occur, and the yield of products is improved; the filling adhesive is utilized to improve the connection strength of the conductive columns and the light-transmitting piece, and the overall stability of the packaging structure is improved. The manufacturing method comprises the steps of independently manufacturing a light transmitting piece provided with a conductive column, and covering the light transmitting piece on a normally installed photosensitive chip. The electronic device provided by the application comprises the chip packaging structure or the chip packaging structure prepared by the manufacturing method, so that the electronic device also has the corresponding advantages.

Description

Chip packaging structure, manufacturing method thereof and electronic equipment
Technical Field
The application relates to the technical field of semiconductors, in particular to a chip packaging structure, a manufacturing method thereof and electronic equipment.
Background
With the iteration of the semiconductor industry, image sensor packaging technologies mainly utilize technologies including: a Charge Coupled Device (CCD) image Sensor, a CMOS chip image processor (CIS) photoelectric Sensor, so that the image Sensor can receive optical signals and convert the optical signals into electrical signals, so that the image Sensor is applied to various electronic products such as digital cameras, vehicle image sensing modules, surveillance cameras, etc., a conventional image sensing chip (Sensor chip) mainly uses a wire bonding (gold wire/copper wire/alloy wire) method to connect an image sensing wafer with a substrate, a light-transmitting adhesive layer is coated on a chip light-sensing area, a light-transmitting cover (e.g., glass) is pasted and arranged above the image sensing wafer to achieve the purpose of light transmission (the light-transmitting adhesive layer satisfies the light transmission ratio of more than 90%), then selective plastic packaging is performed again to form a plastic package body, and the plastic package body leaks out of the light-transmitting cover area, thereby realizing the image sensing function. However, when the semiconductor packaging structure containing the photosensitive chip is manufactured by adopting the existing process, the problems of low yield and poor stability of the packaging structure exist.
Disclosure of Invention
The present disclosure provides a chip package structure, a method for manufacturing the same, and an electronic device, which can solve the problems of low yield of package and poor stability of the package structure of the prior art.
The embodiment of the application can be realized as follows:
in a first aspect, the present application provides a chip package structure, including:
a substrate on which a circuit is disposed;
the photosensitive chip is arranged on the substrate, and a photosensitive area is arranged on one surface of the photosensitive chip, which is far away from the substrate;
the light transmitting piece covers the photosensitive chip, and a rewiring layer is arranged on one side, facing the photosensitive chip, of the light transmitting piece;
the first conductive column is connected with the rewiring layer and the pins of the photosensitive chip;
the second conductive column is connected with the rewiring layer and the circuit of the substrate;
in the clearance between light-transmitting piece and the base plate to and all filled the filling adhesive in the clearance between light-transmitting piece and the sensitization chip, lead electrical pillar with the second with the parcel first, the filling adhesive dodges the sensitization region of sensitization chip.
In an alternative embodiment, a side of the light-transmitting member facing the photosensitive chip is further provided with a light-transmitting adhesive layer, and the light-transmitting adhesive layer covers the photosensitive area.
In an alternative embodiment, the underfill is opaque.
In an alternative embodiment, the optically transparent member is glass.
In a second aspect, the present application provides a method for manufacturing a chip package structure, including:
arranging a rewiring layer on the light-transmitting piece, and arranging a first conductive column and a second conductive column on the rewiring layer;
a photosensitive chip is positively arranged on the substrate, so that a photosensitive area of the photosensitive chip is positioned on one surface of the photosensitive chip, which is far away from the substrate;
covering the light-transmitting piece provided with the rewiring layer, the first conductive column and the second conductive column on the photosensitive chip, and enabling the first conductive column and the second conductive column to be respectively connected with the pins of the photosensitive chip and the circuit on the substrate;
and filling glue is filled in the gap between the light-transmitting piece and the substrate and the gap between the light-transmitting piece and the photosensitive chip so as to wrap the first conductive column and the second conductive column, and the filling glue is enabled to avoid the photosensitive area of the photosensitive chip.
In an alternative embodiment, the step of providing a redistribution layer on the light transmissive member and providing the first conductive pillar and the second conductive pillar on the redistribution layer includes:
paving a light-transmitting material on the light-transmitting piece, forming a groove which is deep to the light-transmitting piece on the light-transmitting material by using laser, and electroplating a metal material at the bottom of the groove to form a rewiring layer;
removing a part of light-transmitting material on the light-transmitting piece, and forming a light-transmitting adhesive layer for covering a light-sensing area of the light-sensing chip by the remaining light-transmitting material;
and laying photoresist on the rewiring layer, slotting the photoresist, filling a metal material in the slot through an electroplating process, and removing the photoresist to form the first conductive column and the second conductive column.
In an optional embodiment, the step of laying a photoresist on the redistribution layer, forming a trench in the photoresist, filling a metal material in the trench through an electroplating process, and removing the photoresist to form the first conductive pillar and the second conductive pillar includes:
laying a first layer of photoresist on the rewiring layer, slotting the first layer of photoresist, filling the material of the first conductive column in the slot through an electroplating process, and removing the first layer of photoresist to form the first conductive column;
and laying a second layer of photoresist on the rewiring layer, wherein the second layer of photoresist is thicker than the first layer of photoresist, slotting the second layer of photoresist, filling the material of the second conductive column in the slot by an electroplating process, removing the second layer of photoresist to form a second conductive column, and the second conductive column is higher than the first conductive column.
In an alternative embodiment, the step of filling the material of the first conductive pillar and the material of the second conductive pillar includes electroplating the copper material to form a copper pillar, and then printing the solder paste on the top of the copper pillar; after the photoresist is removed, the tin paste is made into a tin ball through reflux;
when the light-transmitting piece provided with the rewiring layer, the first conductive column and the second conductive column is covered on the photosensitive chip, the first conductive column and the second conductive column are respectively welded on a pin of the photosensitive chip and a circuit on the substrate through respective solder balls.
In a third aspect, the present application provides an electronic device including the chip package structure of any one of the foregoing embodiments, or a chip package structure manufactured by the manufacturing method of the chip package structure of any one of the foregoing embodiments.
The beneficial effects of the embodiment of the application include, for example:
the chip packaging structure that includes the sensitization chip that the embodiment of this application provided, its sensitization chip leads electrical pillar and rewiring layer through first on the printing opacity piece and leads electrical pillar and second, is connected with the circuit of base plate. The photosensitive chip and the substrate are connected in a routing mode, so that the problem that metal wires in the traditional routing process are easily bent during plastic packaging or glue overflow occurs in glue dispensing of a light-transmitting area to cause incapability of routing is avoided. The filling adhesive can block impurities from entering the chip region from the lateral direction, and can wrap the first conductive column and the second conductive column, so that the connection strength of the light-transmitting piece and the substrate is improved, and the overall stability of the packaging structure is improved. The manufacturing method provided by the embodiment of the application comprises the steps of normally installing the photosensitive chip on the substrate, arranging the rewiring layer, the first conductive column and the second conductive column on the light transmitting piece, covering the light transmitting piece on the photosensitive chip, enabling the first conductive column and the second conductive column to be respectively connected with a pin of the photosensitive chip and a circuit on the substrate, and filling glue. Therefore, the routing process is avoided, the problem that the metal wire is bent by punching is avoided, the product yield is favorably improved, meanwhile, the filling adhesive further protects the first conductive column and the second conductive column, and the product stability is improved. The electronic device provided by the embodiment of the application comprises the chip packaging structure or the chip packaging structure prepared by the manufacturing method, so that the electronic device also has the corresponding advantages.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic diagram of a chip package structure according to an embodiment of the present disclosure;
fig. 2 is a flowchart illustrating a method for fabricating a chip package structure according to an embodiment of the present disclosure;
FIGS. 3-11 are schematic views illustrating a process for fabricating a portion of a light-transmissive member according to an embodiment of the present disclosure;
FIG. 12 is a schematic view of an embodiment of a sensor chip being mounted on a substrate;
FIG. 13 is a schematic view of a light transmissive member covering a photo sensor chip according to an embodiment of the present disclosure;
fig. 14 is a schematic diagram illustrating the filling of the filling glue according to an embodiment of the present application.
Icon: 010-chip package structure; 100-a substrate; 110-pads; 200-a photosensitive chip; 210-pin; 220-a photosensitive area; 300-a light transmissive member; 310-a rewiring layer; 320-a first conductive post; 330-a second conductive pillar; 340-a light-transmitting glue layer; 400-filling glue.
Detailed Description
In the existing package structure including the photo sensor chip, the photo sensor chip is mounted on a substrate, and a pin of the chip is connected to a circuit on the substrate by a wire bonding process (wire bonding process). And then, a plastic package body is formed by adopting a pressure injection molding mode, the chip routing is protected by the plastic package body, the injection molding pressure and the die assembly pressure are high, the technological parameters are difficult to control (mold flow/pressure), and the defects of glue overflow, line arc punching, mold blocking and the like exist, so that the yield of products is reduced. Moreover, the image sensor packaging structure is manufactured by adopting the existing process, the photosensitive area of the chip is subjected to glue dispensing, and glue overflows to the pins of the chip by utilizing the glue dispensing process, so that routing cannot be performed, and the packaging yield of the product is influenced.
In order to solve the problem of low packaging yield of a chip packaging structure (an image sensor packaging structure containing a photosensitive chip) in the prior art, the application provides the chip packaging structure, a manufacturing method thereof and electronic equipment. And a new process is correspondingly adopted, so that the problem of low packaging yield is solved.
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. are used for indicating the orientation or positional relationship based on the orientation or positional relationship shown in the drawings or the orientation or positional relationship which the present invention product is usually put into use, it is only for convenience of describing the present application and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation and be operated, and thus, should not be construed as limiting the present application.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
Fig. 1 is a schematic diagram of a chip package structure 010 according to an embodiment of the present disclosure. Referring to fig. 1, the present embodiment provides a chip package structure 010, including:
a substrate 100, the substrate 100 having a circuit disposed thereon;
a photosensitive chip 200 mounted on the substrate 100, wherein a photosensitive area 220 is disposed on a surface of the photosensitive chip 200 facing away from the substrate 100;
a light-transmitting member 300 covering the photosensitive chip 200, the light-transmitting member 300 being provided with a rewiring layer 310 on a side facing the photosensitive chip 200;
the first conductive pillar 320, the first conductive pillar 320 connects the redistribution layer 310 and the pin 210 of the photosensitive chip 200;
a second conductive pillar 330, the second conductive pillar 330 connecting the redistribution layer 310 and the circuit of the substrate 100;
in the embodiment of the present application, the gap between the light-transmitting member 300 and the substrate 100 and the gap between the light-transmitting member 300 and the photo-sensing chip 200 are filled with the filling adhesive to wrap the first conductive pillar and the second conductive pillar, and the filling adhesive avoids the photo-sensing area of the photo-sensing chip.
In the embodiment, the first conductive pillar 320, the second conductive pillar 330 and the redistribution layer 310 are used to connect the circuit of the substrate 100 and the photosensitive chip 200, so that the connection stability between the substrate 100 and the photosensitive chip 200 is higher than that of a metal wire formed by a wire bonding process. Moreover, the filling adhesive 400 is used to protect the welding area of the conductive column, so that the connection strength between the light-transmitting member 300, the conductive column, the photosensitive chip 200 and the substrate 100 can be ensured, and the light-transmitting member 300, the conductive column and the like are not easy to loosen. Moreover, the filling adhesive 400 can prevent impurities from entering the package structure from the side direction, which may negatively affect the photosensitive chip 200. Optionally, the filling adhesive 400 is made of an opaque material, so as to prevent the ghost phenomenon of the photosensitive region 220 due to reflection/refraction/diffraction.
In this embodiment, the circuit on the substrate 100 may be located on the surface of the substrate 100, or may be partially disposed inside the substrate 100 and partially exposed on the surface of the substrate 100. To facilitate connection of the conductive posts, the circuit includes pads 110 formed on the surface of the substrate 100.
The photo sensor chip 200 is attached to the surface of the substrate 100 in a normal manner, the bottom (lower side in fig. 1) of the photo sensor chip 200 can be bonded to the substrate 100 by using silver paste, and the pins 210 of the photo sensor chip 200 face upward to facilitate connection with the first conductive posts 320. In the embodiment of the present application, the photosensitive area 220 of the photosensitive chip 200 is used for collecting light signals to form an image. The photosensitive region 220 is covered with a light-transmitting adhesive layer 340, and the light-transmitting adhesive layer 340 also protects the photosensitive region 220 under the condition of ensuring light transmission. Optionally, the light transmittance of the light-transmitting glue layer 340 is over 90%.
The material of the light-transmitting member 300 may be glass, or other transparent materials with high light transmittance that meet the requirements of the package structure or the electronic device to other performances, such as resin, crystal, etc. In this embodiment, the light-transmitting member 300 is glass and has a substantially plate shape, and the upper and lower surfaces are parallel to each other. A Redistribution Layer 310 (RDL) is disposed on a surface of the light-transmitting member 300 facing the photosensitive chip 200, and the first conductive pillar 320 and the second conductive pillar 330 are both connected to the Redistribution Layer 310 and electrically connected to the Redistribution Layer 310. It is understood that the meaning of the redistribution layer 310 is to connect the first conductive pillar 320 and the second conductive pillar 330, and therefore, the form of the redistribution layer 310 may have diversity, and may be one or more metal lines connecting the first conductive pillar 320 and the second conductive pillar 330; or may be a metal plate, and the first conductive post 320 and the second conductive post 330 are both fixed on the metal plate. The redistribution layer 310 may be made of a metal having good conductive performance, and the connection stability with the first conductive pillar 320 and the second conductive pillar 330 is also considered, for example, a metal such as copper, gold, silver, or the like may be used; in alternative embodiments, the material of the redistribution layer 310 may not be metal, but may be other materials that have good electrical conductivity and facilitate connection with the first conductive pillars 320 and the second conductive pillars 330.
The material of the first conductive post 320 and the second conductive post 330 may be a metal, such as a copper post; other materials with good conductive properties may be used, and the stability of the bonding with the redistribution layer 310 should be considered. In this embodiment, the first conductive pillar 320 and the second conductive pillar 330 are copper pillars, and ends of the first conductive pillar and the second conductive pillar that are far away from the light transmissive element 300 are soldered to the pins 210 of the photosensitive chip 200 and the pads 110 of the substrate 100 by solder balls.
Fig. 2 is a flowchart illustrating a method for manufacturing the chip package structure 010 according to an embodiment of the disclosure. The manufacturing method provided by the embodiment of the application can be used for manufacturing the chip packaging structure 010 provided by the embodiment. By replacing the traditional way of forming the plastic package body by protecting the wire loop (wire bonding process), the chip packaging structure 010 has simpler manufacturing process, lower cost and higher yield. The manufacturing method comprises the following steps:
step S100, a redistribution layer is disposed on the light transmissive member, and a first conductive pillar and a second conductive pillar are disposed on the redistribution layer.
Taking the fabrication of the chip package structure 010 provided in the embodiment of the present application as an example, first, the fabrication of the relevant portion of the light-transmitting member 300 is performed. Fig. 3 to 11 are schematic views illustrating a manufacturing process of a relevant portion of a light-transmissive member 300 according to an embodiment of the present invention. As shown in fig. 3 to 11, specifically, a light-transmitting member 300 is obtained first, and the light-transmitting member 300 may be a plate-shaped glass. The rewiring layer 310 is arranged on the surface of the light-transmitting member 300, and can be specifically realized by the following steps:
a light-transmitting material is laid on the light-transmitting member 300 as shown in fig. 3. The material of the transparent material is the same as that of the transparent adhesive layer 340 in the embodiment of fig. 1. A groove is opened on the light-transmitting material by laser to a depth of the light-transmitting member 300, and a metal material is plated at the bottom of the groove to form a rewiring layer 310, as shown in fig. 4. The re-wiring layer 310 may be copper. In this embodiment, when laser grooving is used, the groove may be formed to a depth greater than the thickness of the light-transmissive material, so as to form a groove on the light-transmissive member 300, that is, the rewiring layer 310 may be formed in the groove of the light-transmissive member 300. Then, a portion of the light-transmissive material on the light-transmissive member 300 is removed by ultraviolet irradiation, and the remaining light-transmissive material forms a light-transmissive adhesive layer 340 for covering the photosensitive region 220 of the photosensitive chip 200, as shown in fig. 5. It can be understood that the process of slotting on the light-transmitting material and removing a part of the light-transmitting material can be realized by laser, ultraviolet light, or other existing methods such as mechanical removal. It is understood that the specific form of the redistribution layer 310 may be determined according to the positions of the first conductive pillars 320 and the second conductive pillars 330 that need to be connected, in this embodiment, the redistribution layer 310 includes at least two metal sheets, and each metal sheet is used to connect one first conductive pillar 320 and one second conductive pillar 330. Since the light-transmitting adhesive layer 340 needs to cover the light-sensing region 220 of the light-sensing chip 200, when a part of the light-transmitting material is removed to form the light-transmitting adhesive layer 340, the size of the light-transmitting adhesive layer 340 needs to be designed in consideration of the size of the light-sensing region 220 to be subsequently matched.
After the redistribution layer 310 is arranged, the fabrication of the first conductive pillar 320 and the second conductive pillar 330 needs to be completed, which may specifically be implemented as follows:
a photoresist is laid on the redistribution layer 310, then a trench is formed in the photoresist, a metal material is filled in the trench through an electroplating process, and the photoresist is removed to form the first conductive pillar 320 and the second conductive pillar 330. Taking the first conductive pillar 320 as an example, a first layer of photoresist is first laid on the redistribution layer 310, as shown in fig. 6. Trenches are then opened in the first layer of photoresist and the material of the first conductive pillars 320 is filled in the trenches by an electroplating process, as shown in fig. 7. In the present embodiment, the copper material is filled by the copper electroplating process to form the copper pillar, and then the solder paste is printed on the top of the copper pillar to form the solder ball for the subsequent soldering with the pin 210 of the photo chip 200. The first layer of photoresist is then removed and the solder paste is reflowed to form solder balls, forming the first conductive pillars 320, as shown in fig. 8. In the present embodiment, there are two first conductive pillars 320, which are fabricated together. Fabricating the second conductive pillars 330 in a similar manner, including laying a second layer of photoresist on the re-routing layer 310, the second layer of photoresist being thicker than the first layer of photoresist, as shown in fig. 9; a groove is formed in the second layer of photoresist, the material of the second conductive pillar 330 is filled in the groove through an electroplating process, the second layer of photoresist is removed to form the second conductive pillar 330, and the second conductive pillar 330 is higher than the first conductive pillar 320, as shown in fig. 10 and 11. Of course, the top of the second conductive pillar 330 also has solder balls. In this embodiment, the photoresist may be removed by using a chemical cleaning/developing method.
In the present embodiment, the heights of the first conductive pillars 320 and the second conductive pillars 330 are set to be different, so as to better match with the photosensitive chip 200 and the substrate 100. Since the height difference exists between the photosensitive chip 200 and the surface of the substrate 100 after the photosensitive chip 200 is mounted on the substrate 100, the heights of the first conductive pillar 320 and the second conductive pillar 330 need to be adjusted adaptively according to the height difference.
In an alternative embodiment of the present application, a plurality of conductive pillars and redistribution layers 310 required by the package structure may be disposed on a larger light-transmitting member 300 at one time, and then a plurality of light-transmitting members 300 (having conductive pillars and redistribution layers 310) suitable for a single chip package structure 010 are formed by cutting.
Step S200, a photosensitive chip is positively arranged on the substrate, so that a photosensitive area of the photosensitive chip is positioned on one surface of the photosensitive chip, which is deviated from the substrate.
FIG. 12 is a schematic diagram illustrating an embodiment of a photosensitive chip 200 being mounted on a substrate 100. As shown in fig. 12, taking the fabrication of the chip package structure 010 provided in the embodiment of the present application as an example, a substrate 100 with a circuit is first obtained, and then the photosensitive chip 200 is attached to the surface of the substrate 100 in a way of face-up mounting. The photosensitive chip 200 and the surface of the substrate 100 may be bonded by silver paste. In the present embodiment, the relative position relationship between the pins 210 and the pads 110 of the photosensitive chip 200 and the relative position relationship between the ends of the first conductive pillars 320 and the second conductive pillars 330 should correspond.
In some alternative embodiments, a groove may be formed on the substrate 100, and the photosensitive chip 200 is embedded in the groove to reduce the package size. Of course, in this case, the lengths of the first conductive pillar 320 and the second conductive pillar 330 need to be adjusted, and if the upper surface of the photosensitive chip 200 is flush with the surface of the substrate 100, the lengths of the first conductive pillar 320 and the second conductive pillar 330 should be consistent.
Step S300, the light-transmitting member with the redistribution layer, the first conductive pillar and the second conductive pillar covers the photosensitive chip, so that the first conductive pillar and the second conductive pillar are respectively connected to the pins of the photosensitive chip and the circuit on the substrate.
Fig. 13 is a schematic view illustrating the light-transmitting member 300 covering the photosensitive chip 200 according to an embodiment of the present disclosure. As shown in fig. 13, taking the fabrication of the chip package structure 010 provided in the embodiment of the present application as an example, the light-transmitting member 300 provided with the redistribution layer 310, the first conductive pillar 320 and the second conductive pillar 330 and fabricated in step S100 is covered on the photosensitive chip 200, and the first conductive pillar 320 and the second conductive pillar 330 are respectively soldered to the pin 210 of the photosensitive chip 200 and the pad 110 on the substrate 100 through a solder ball, so that the photosensitive chip 200 is connected to the circuit on the substrate 100 through the first conductive pillar 320, the redistribution layer 310 and the second conductive pillar 330. Meanwhile, the light-transmitting glue layer 340 covers the light-sensing area 220 of the light-sensing chip 200.
Step S400, filling the gap between the light-transmitting member and the substrate and the gap between the light-transmitting member and the photosensitive chip with filling glue to wrap the first conductive pillar and the second conductive pillar, and making the filling glue avoid the photosensitive area of the photosensitive chip.
Fig. 14 is a schematic diagram illustrating the filling of the filling glue 400 according to an embodiment of the present application. As shown in fig. 14, the manufacturing method further includes filling the filling adhesive 400 in the gap between the light-transmitting member 300 and the substrate 100 and the gap between the light-transmitting member 300 and the chip to wrap the first conductive pillar 320 and the second conductive pillar 330, and then curing the filling adhesive 400, so as to obtain the structure shown in fig. 14. Since the photosensitive region 220 of the photosensitive chip 200 is already covered by the light-transmitting glue layer 340, the filling glue 400 can naturally avoid the photosensitive region 220 without shielding it, so that the photosensitive chip 200 can collect light rays emitted from the outside of the light-transmitting member 300. In this embodiment, the first conductive pillar 320 and the second conductive pillar 330 are wrapped by the filling adhesive 400, so that the welding stability of the conductive pillars can be ensured, and the connection strength between the conductive pillars, the light-transmitting member 300 and the substrate 100 can be improved; meanwhile, impurities can be prevented from entering the packaging structure laterally to generate negative influence on the photosensitive chip 200. In the embodiment, the filling adhesive 400 is an opaque material, which can reduce the interference of other light rays entering the photosensitive region 220 without front penetration, and solve the problem of ghost image of the image finally acquired by the photosensitive chip 200. Finally, the back of the substrate 100 is subjected to ball planting to form solder balls on the back of the substrate 100.
In order to improve the manufacturing efficiency, the processes of mounting the photosensitive chips 200 and covering the light-transmitting members 300 may be performed on a larger substrate 100, and simultaneously mounting a plurality of photosensitive chips 200 covering a plurality of light-transmitting members 300; the substrate 100 is also prefabricated with a plurality of sets of circuits corresponding to the plurality of chip package structures 010. After a plurality of package structures connected by the substrate 100 are formed on a large substrate 100, a cutting process is performed to form a single chip package structure 010.
By adopting the chip packaging structure 010 and the manufacturing method thereof provided by the embodiment of the application, the chip packaging structure 010 has the following advantages:
the interconnection between the photosensitive chip 200 and the substrate 100 is realized through the rewiring layer 310, the first conductive pillars 320 and the second conductive pillars 330, the traditional routing mode is replaced, the manufacturing process flow is simplified, and the traditional process flow sequence (chip-routing-transparent glass-pasting) is changed, so that the problem that the chip cannot be routed and the packaging yield is influenced due to glue overflow in a glue dispensing process in the traditional process flow is avoided. By forming the transparent adhesive layer 340 on the transparent member 300, the photosensitive area 220 of the photosensitive chip 200 is protected, and the residual adhesive is prevented from contaminating the photosensitive area of the chip when the filling adhesive 400 is subsequently filled. The first conductive column 320 and the second conductive column 330 are wrapped by the filling adhesive 400, so that the welding stability of the conductive columns can be ensured, and the connection strength among the conductive columns, the light-transmitting piece 300 and the substrate 100 is improved; meanwhile, impurities can be prevented from entering the packaging structure laterally to generate negative influence on the photosensitive chip 200. The filling adhesive 400 is an opaque material, which can reduce the interference of other light rays entering the photosensitive region 220 due to non-front penetration, and solve the problem of ghost images of the images finally acquired by the photosensitive chip 200. The manufacturing method replaces the traditional mode of protecting the wire arc of the plastic packaging body, and has simpler manufacturing process and lower cost.
The embodiment of the application further provides an electronic device, which includes the chip package structure 010 provided by the application or the chip package structure 010 manufactured by the manufacturing method. The electronic device can be a camera, a video camera or a monitoring device and the like which needs to acquire images.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (9)

1. A chip package structure, comprising:
a substrate on which a circuit is disposed;
the photosensitive chip is arranged on the substrate, and a photosensitive area is arranged on one surface of the photosensitive chip, which is far away from the substrate;
the light-transmitting piece covers the photosensitive chip, and a rewiring layer is arranged on one side, facing the photosensitive chip, of the light-transmitting piece;
the first conductive column is connected with the rewiring layer and the pins of the photosensitive chip;
a second conductive pillar connecting the redistribution layer and the line of the substrate;
the light-transmitting piece and the gap between the substrates and the gap between the light-transmitting piece and the photosensitive chip are filled with filling glue to wrap the first conductive column and the second conductive column, and the filling glue avoids the photosensitive area of the photosensitive chip.
2. The chip package structure according to claim 1, wherein a side of the light-transmissive member facing the photosensitive chip is further provided with a light-transmissive adhesive layer, and the light-transmissive adhesive layer covers the photosensitive region.
3. The chip package structure according to claim 1, wherein the underfill is opaque.
4. The chip package structure according to any one of claims 1 to 3, wherein the light-transmissive member is glass.
5. A method for manufacturing a chip packaging structure is characterized by comprising the following steps:
arranging a rewiring layer on a light-transmitting piece, and arranging a first conductive column and a second conductive column on the rewiring layer;
a photosensitive chip is positively arranged on a substrate, so that a photosensitive area of the photosensitive chip is positioned on one surface of the photosensitive chip, which is far away from the substrate;
covering the light-transmitting piece provided with the rewiring layer, the first conductive column and the second conductive column on the photosensitive chip, so that the first conductive column and the second conductive column are respectively connected with a pin of the photosensitive chip and a circuit on the substrate;
filling glue is filled in the gap between the light-transmitting piece and the substrate and the gap between the light-transmitting piece and the photosensitive chip so as to wrap the first conductive column and the second conductive column and enable the filling glue to avoid the photosensitive area of the photosensitive chip.
6. The method for manufacturing the chip package structure according to claim 5, wherein the step of providing the redistribution layer on the light-transmissive member, and providing the first conductive pillar and the second conductive pillar on the redistribution layer includes:
paving a light-transmitting material on the light-transmitting piece, forming a groove reaching the light-transmitting piece on the light-transmitting material by using laser, and electroplating a metal material at the bottom of the groove to form the rewiring layer;
removing a part of the light-transmitting material on the light-transmitting piece, and forming a light-transmitting adhesive layer for covering a light-sensing area of the light-sensing chip by the remaining light-transmitting material;
and laying photoresist on the rewiring layer, forming a groove in the photoresist, filling a metal material in the groove by an electroplating process, and removing the photoresist to form the first conductive column and the second conductive column.
7. The method for manufacturing the chip package structure according to claim 6, wherein the steps of spreading a photoresist on the redistribution layer, forming a groove on the photoresist, filling a metal material in the groove through an electroplating process, and removing the photoresist to form the first conductive pillar and the second conductive pillar include:
laying a first layer of photoresist on the rewiring layer, slotting the first layer of photoresist, filling the material of the first conductive column in the slot through an electroplating process, and removing the first layer of photoresist to form the first conductive column;
and laying a second layer of photoresist on the rewiring layer, wherein the second layer of photoresist is thicker than the first layer of photoresist, slotting the second layer of photoresist, filling materials of the second conductive columns in the slots by an electroplating process, and removing the second layer of photoresist to form the second conductive columns, wherein the second conductive columns are higher than the first conductive columns.
8. The method for manufacturing the chip package structure according to claim 7, wherein the step of filling the material of the first conductive pillar and the material of the second conductive pillar comprises electroplating a copper material to form a copper pillar, and then printing a solder paste on the top of the copper pillar; after removing the photoresist, forming a tin ball by the tin paste through refluxing;
when the light-transmitting piece provided with the rewiring layer, the first conductive column and the second conductive column is covered on the photosensitive chip, the first conductive column and the second conductive column are respectively welded on the pins of the photosensitive chip and the circuit on the substrate through respective solder balls.
9. An electronic device comprising the chip packaging structure of any one of claims 1 to 4, or a chip packaging structure manufactured by the manufacturing method of the chip packaging structure of any one of claims 5 to 8.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1956201A (en) * 2005-10-24 2007-05-02 林协裕 Package structure of image sensing device
CN103337504A (en) * 2013-05-31 2013-10-02 南通富士通微电子股份有限公司 A packaging method for an image sensor
CN105097862A (en) * 2015-08-28 2015-11-25 苏州晶方半导体科技股份有限公司 Image sensor package structure and package method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971924A (en) * 2005-11-24 2007-05-30 矽格股份有限公司 Encapsulation structure of optical sensor
CN105845635B (en) * 2015-01-16 2018-12-07 恒劲科技股份有限公司 Electron package structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1956201A (en) * 2005-10-24 2007-05-02 林协裕 Package structure of image sensing device
CN103337504A (en) * 2013-05-31 2013-10-02 南通富士通微电子股份有限公司 A packaging method for an image sensor
CN105097862A (en) * 2015-08-28 2015-11-25 苏州晶方半导体科技股份有限公司 Image sensor package structure and package method thereof

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