CN111490142A - Ultraviolet L ED device - Google Patents
Ultraviolet L ED device Download PDFInfo
- Publication number
- CN111490142A CN111490142A CN202010305693.0A CN202010305693A CN111490142A CN 111490142 A CN111490142 A CN 111490142A CN 202010305693 A CN202010305693 A CN 202010305693A CN 111490142 A CN111490142 A CN 111490142A
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- Prior art keywords
- ultraviolet
- chip
- substrate
- cup
- lens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The application discloses an ultraviolet L ED device which comprises a substrate, an ultraviolet L ED chip, a chip fixing part, a high-reflection medium layer and a cup-type lens, wherein the upper surface and the lower surface of the substrate are respectively provided with a bonding pad, the chip fixing part is connected with the ultraviolet L ED chip and the bonding pad on the upper surface, the high-reflection medium layer is positioned on the upper surface of the bonding pad and on the outer side of the chip fixing part, the cup-type lens is connected with the substrate and forms a cavity for accommodating the ultraviolet L ED chip, the chip fixing part is arranged on the bonding pad on the upper surface of the substrate, the high-reflection medium layer is arranged on the periphery of the chip fixing part and on the bonding pad on the upper surface of the substrate, the reflectivity of ultraviolet rays is effectively improved, the absorption of the ultraviolet rays is reduced, the cup-type lens is directly connected with the substrate to form the cavity, a frame is not required to be arranged on the substrate, the absorption of the ultraviolet rays is avoided, the ultraviolet rays originally irradiated on the frame.
Description
Technical Field
The application relates to the technical field of L ED, in particular to an ultraviolet L ED device.
Background
Ultraviolet L ED (light emitting diode) generally refers to L ED with the light emitting center wavelength below 400nm, and has wide application prospect in the fields of biomedical treatment, anti-counterfeiting identification, purification (water, air and the like), computer data storage, military and the like.
The existing ultraviolet L ED device adopts a structure of combining a substrate and a frame, and the frame is loaded with planar quartz glass, as shown in fig. 1, wherein the frame and the substrate are combined in two ways, one is to connect a ceramic frame and the substrate by adhesion, and the other is to form a pure copper frame layer by using an electroplating process, and form an integrated connection with the substrate, the two ways are complex in process and high in cost.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide an ultraviolet L ED device, which improves the reflectivity and the utilization rate of an ultraviolet L ED device to ultraviolet rays and simplifies the manufacturing process.
To solve the above technical problem, the present application provides an ultraviolet L ED device, comprising:
the upper surface and the lower surface are respectively provided with a substrate of a welding disc;
ultraviolet L ED chips;
a chip fixing portion connecting the ultraviolet L ED chip and the bonding pad on the upper surface;
the high-reflection dielectric layer is positioned on the upper surface of the bonding pad and outside the chip fixing part;
and the cup-type lens is connected with the substrate, and a cavity for accommodating the ultraviolet L ED chip is formed by the cup-type lens and the substrate.
Optionally, the high-reflection dielectric layer is an aluminum dielectric layer or a teflon dielectric layer.
Optionally, the cup lens is a spherical cup lens.
Optionally, when the ultraviolet L ED chip is a normal chip, the method further includes:
and the lead is used for connecting the ultraviolet L ED chip and the bonding pad on the upper surface of the substrate.
Optionally, the wire is a gold wire.
Optionally, the substrate is an aluminum nitride ceramic substrate or an aluminum oxide ceramic substrate.
Optionally, the cavity is filled with nitrogen or an inert gas.
Optionally, the cup lens is a quartz glass cup lens.
The ultraviolet L ED device comprises a substrate, an ultraviolet L ED chip, a chip fixing portion, a high-reflection medium layer and a cup-shaped lens, wherein the upper surface and the lower surface of the substrate are respectively provided with a bonding pad, the chip fixing portion is used for connecting the ultraviolet L ED chip and the bonding pad on the upper surface, the high-reflection medium layer is located on the upper surface of the bonding pad and on the outer side of the chip fixing portion, and the cup-shaped lens is connected with the substrate and forms a cavity for containing the ultraviolet L ED chip together with the substrate.
It can be seen that, be provided with the chip fixed part on the pad of base plate upper surface in the ultraviolet L ED device in this application, and utilize this chip fixed part to fix ultraviolet L ED chip, be provided with the high reflection medium layer in the periphery of chip fixed part and on the pad of base plate upper surface, avoid setting up the gold-plated layer, can effectively improve the reflectivity of ultraviolet ray, reduce the absorption of ultraviolet L ED device to ultraviolet ray, and the lens is cup cover formula lens, directly link to each other with the base plate and form the cavity that holds outer L ED chip, need not to set up the frame on the base plate, avoid the frame to the absorption of ultraviolet ray, lead out the ultraviolet ray of shining originally in the frame position to the external world through cup cover formula lens, improve the utilization ratio of ultraviolet ray, simplify the preparation technology of ultraviolet L ED device simultaneously, and reduce cost.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art UV L ED device;
FIG. 2 is a graph of light reflectance for different metals;
fig. 3 is a schematic structural diagram of an ultraviolet L ED device provided in an embodiment of the present application;
fig. 4 is a top view of an ultraviolet L ED device provided by embodiments of the present application;
fig. 5 is a schematic structural diagram of an ultraviolet L ED device provided in an embodiment of the present application;
in the figure, 1, a substrate, 2, a bonding pad, 3, an ultraviolet L ED chip, 4, a chip fixing part, 5, a high-reflection medium layer, 6, a cup-shaped lens, 7, a cavity, 8, a planar lens and 9, a frame.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the existing ultraviolet L ED device has a structure of combining a substrate and a frame, the manufacturing process is complex, gold or silver needs to be plated on the surfaces of the substrate and the frame, a large amount of ultraviolet light is absorbed by gold or silver on the inner surface of the L ED device, or cannot be effectively emitted to the angle of a light emitting surface, which causes great resource waste and performance waste.
In view of the above, the present application provides an ultraviolet L ED device, please refer to fig. 3 and fig. 4, fig. 3 is a schematic structural diagram of an ultraviolet L ED device provided in an embodiment of the present application, and fig. 4 is a top view of an ultraviolet L ED device provided in an embodiment of the present application, including:
a substrate 1 having pads 2 on the upper and lower surfaces thereof, respectively;
ultraviolet L ED chip 3;
a chip fixing portion 4 connecting the ultraviolet L ED chip 3 and the pad 2 on the upper surface;
a highly reflective dielectric layer 5 located on the upper surface of the bonding pad 2 and outside the chip fixing portion 4;
and a cup lens 6 connected with the substrate 1 and the substrate 1 form a cavity 7 for accommodating the ultraviolet L ED chip 3.
It should be noted that the pad 2 where the high-reflection dielectric layer 5 is located is the pad 2 located on the upper surface of the substrate 1, that is, the high-reflection dielectric layer 5 is disposed on the upper surface of the pad 2 except for the region where the chip fixing portion 4 is located, so as to avoid absorption of ultraviolet light, and increase ultraviolet light reflectivity while ensuring performance and reliability of the ultraviolet L ED device, where the pad 2 is generally a copper pad 2.
The high-reflection medium layer 5 refers to a medium layer with a reflectivity of more than 80% for ultraviolet rays, and preferably, the high-reflection medium layer 5 is an aluminum medium layer or a teflon medium layer, so that the cost of the ultraviolet L ED device can be further reduced.
The cup-type lens 6 is connected with the upper surface of the substrate 1 through a bonding medium, the bonding medium is not particularly limited in the application, and a closed cavity 7 can be formed as long as the cup-type lens 6 is connected with the substrate 1. For example, the adhesive medium may be a silicon gel, an epoxy gel, or the like.
The size of the chip fixing part 4 is set according to different ultraviolet L ED chip 3 sizes, and is consistent with the ultraviolet L ED chip 3. the ultraviolet L ED chip 3 comprises a substrate layer, a buffer layer, an N-type AlGaN layer, a negative electrode, a quantum well layer, a P-type AlGaN layer, a contact layer and a positive electrode, and the specific structure is well known to those skilled in the art and is not described in detail herein.
When the ultraviolet L ED chip 3 is a flip-chip L ED chip, the chip fixing portion 4 is a gold fixing portion to increase the connection firmness of the ultraviolet L ED chip 3 and the bonding pad 2, and when the ultraviolet L ED chip 3 is a front-mounted chip, the ultraviolet L ED chip further comprises a lead for connecting the ultraviolet L ED chip 3 and the bonding pad 2 on the upper surface of the substrate 1, and the lead is used for electrically connecting a positive electrode and a negative electrode of the ultraviolet L ED chip 3 with the bonding pad 2.
Optionally, the wire is a gold wire, but the application is not limited to this specifically, and the wire may also be a silver wire, a copper wire, an alloy wire, or the like.
In an embodiment of the present application, the substrate 1 is an aluminum nitride ceramic substrate 1, but the present application is not particularly limited thereto, and in another embodiment of the present application, the substrate 1 may also be an aluminum oxide ceramic substrate 1.
Optionally, the cup lens 6 is any one of a quartz glass cup lens 6, a soda lime glass cup lens 6, a borosilicate glass cup lens 6, and the like.
Be provided with chip fixed part 4 on the pad 2 of base plate 1 upper surface in the ultraviolet L ED device in this application, and utilize this chip fixed part 4 fixed with ultraviolet L ED chip 3, be provided with high-reflection medium layer 5 in the periphery of chip fixed part 4 and on pad 2 of base plate 1 upper surface, avoid setting up the gold-plated layer, can effectively improve the reflectivity of ultraviolet ray, reduce the absorption of ultraviolet L ED device to ultraviolet ray, and lens are cup cover lens 6, directly link to each other with base plate 1 and form the cavity 7 that holds outer L ED chip, need not to set up the frame on base plate 1, avoid the frame to the absorption of ultraviolet ray, direct ultraviolet ray of shining originally at the frame position exports to the external world through cup cover lens 6, improve the utilization ratio of ultraviolet ray, simplify the preparation technology of ultraviolet L ED device simultaneously, and reduce cost.
On the basis of any of the above embodiments, in an embodiment of the present application, the cup lens 6 is a spherical cup lens 6, which can realize different exit angles of ultraviolet rays, and fig. 5 is a schematic view of another structure of an ultraviolet L ED device.
In addition to any of the above embodiments, in one embodiment of the present application, the cavity 7 is filled with nitrogen or inert gas to protect the ultraviolet L ED chip 3 and prolong the service life of the ultraviolet L ED device.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It should be noted that, for those skilled in the art, the present application can be modified and modified without departing from the principle of the present application, and the modified and modified embodiments also fall within the protection scope of the claims of the present application.
Claims (8)
1. An ultraviolet L ED device, comprising:
the upper surface and the lower surface are respectively provided with a substrate of a welding disc;
ultraviolet L ED chips;
a chip fixing portion connecting the ultraviolet L ED chip and the bonding pad on the upper surface;
the high-reflection dielectric layer is positioned on the upper surface of the bonding pad and outside the chip fixing part;
and the cup-type lens is connected with the substrate, and a cavity for accommodating the ultraviolet L ED chip is formed by the cup-type lens and the substrate.
2. The ultraviolet L ED device of claim 1, wherein the highly reflective dielectric layer is an aluminum dielectric layer or a Teflon dielectric layer.
3. The ultraviolet L ED device of claim 1 or 2, wherein the cup lens is a spherical cup lens.
4. The ultraviolet L ED device of claim 3, wherein when the ultraviolet L ED chip is a front-mounted chip, further comprising:
and the lead is used for connecting the ultraviolet L ED chip and the bonding pad on the upper surface of the substrate.
5. The ultraviolet L ED device of claim 4, wherein the conductive lines are gold lines.
6. The ultraviolet L ED device of claim 5, wherein the substrate is an aluminum nitride ceramic substrate or an aluminum oxide ceramic substrate.
7. The ultraviolet L ED device of claim 6, wherein the cavity is filled with nitrogen or an inert gas.
8. The ultraviolet L ED device of claim 7, wherein the cup lens is a quartz glass cup lens.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010305693.0A CN111490142A (en) | 2020-04-17 | 2020-04-17 | Ultraviolet L ED device |
| KR1020227005548A KR20220033521A (en) | 2020-04-17 | 2020-07-03 | Ultraviolet LED device |
| PCT/CN2020/100110 WO2021208264A1 (en) | 2020-04-17 | 2020-07-03 | Ultraviolet led device |
| US17/635,391 US20220293824A1 (en) | 2020-04-17 | 2020-07-03 | Ultraviolet led device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010305693.0A CN111490142A (en) | 2020-04-17 | 2020-04-17 | Ultraviolet L ED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111490142A true CN111490142A (en) | 2020-08-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010305693.0A Pending CN111490142A (en) | 2020-04-17 | 2020-04-17 | Ultraviolet L ED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111490142A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670391A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN114864796A (en) * | 2022-07-05 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Ultraviolet device packaging structure and manufacturing method |
-
2020
- 2020-04-17 CN CN202010305693.0A patent/CN111490142A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670391A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN114864796A (en) * | 2022-07-05 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Ultraviolet device packaging structure and manufacturing method |
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