JP2002198570A - Solid state optical element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting diode, a light receiving element, a light receiving and emitting element, etc., as a solid state optical element having resistance to temperature change wherein reduction of fraction defective and increase of product size are enabled. SOLUTION: In a light emitting diode 1, a light emitting chip 2 is mounted on one side lead 3a, electrical connection is performed by bonding leads 3a, 3b and the light emitting chip 2 by using wires 4a, 4b, transparent silicon resin 7 is sprayed to the light emitting chip 2, tips of the leads 3a, 3b and the wires 4a, 4b. These electrical connection parts are covered with the transparent silicon resin 7, the above members are sealed with transparent epoxy resin 5, and a shape of a light radiating surface 6 having a convex lens shape is molded on a light emitting surface side of the light emitting chip 2. Since the whole electrical connection parts are covered with the transparent silicon resin 7 as light transmitting elastic material, thermal stress is relieved, and tensile force is not applied to the electrical connection parts under a high temperature environment at least 200 deg.C in the case of surface mounting.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state optical device, that is, a light-emitting diode (hereinafter abbreviated as "LED") equipped with a solid-state light-receiving / emitting chip (light-emitting chip and / or light-receiving chip), and a photodiode. (Hereinafter “PD”
Also abbreviated. ), Phototransistor (hereinafter, “PT”)
Also abbreviated. ), And a light-receiving / emitting element in which these light-emitting diodes and light-receiving elements are paired.

[0002] In this specification, an LED chip itself is called a "light emitting chip", and an entire light emitting device on which the LED chip is mounted is called a "light emitting diode" or "LED". Similarly, the PD chip and the PT chip themselves are called “light receiving chips”, and the entire light receiving device on which the PD chip and the PT chip are mounted is called “photodiode”,
Alternatively, they will be referred to as “PD” and “phototransistor” or “PT”.

[0003]

2. Description of the Related Art Conventionally, there is a light emitting diode of a resin sealing type mounted on a substrate surface as shown in FIG. As shown in FIG. 11, the light emitting diode 61 is composed of a pair of leads 3 for supplying power to the light emitting chip 2.
The light-emitting chip 2 is mounted on one of the leads 3a and 3b, and the other lead 3b and the light-emitting chip 2 are bonded to each other by wires 4 to make electrical connection. In addition, the light emitting surface of the light emitting chip 2 is molded on the light emitting surface side of the light emitting chip 2. After the LED 61 having such a configuration is automatically mounted on the substrate on which the cream solder is applied,
Soldering is performed by passing through a reflow furnace at 0 ° C. or higher.

[0004]

However, most of the LEDs having such a configuration have a size L0 (less than 3 mm in the case of a circular shape in a plan view and a length of one side in the case of a square shape) of a resin-sealed portion. And the defect rate after surface mounting was high. The reason is that the difference in the coefficient of thermal expansion between the leads 3a and 3b and the transparent epoxy resin 5 is large. That is, as the leads 3a and 3b, copper or iron plates usually plated with silver are used. The thermal expansion coefficient of these metals is 16.7 × 10 ⁻⁶ / ° C. for copper (Cu) and iron (Fe). At 11.
8 × 10 ⁻⁶ / ° C. On the other hand, the transparent epoxy resin is as large as 6.3 × 10 ⁻⁵ / ° C., and becomes as high as 16.5 × 10 ⁻⁵ / ° C. above the glass transition point (about 130 ° C.).

For this reason, when passing through a reflow furnace at 200 ° C. or more, the light emitting chip 2 and one lead 3 a, the light emitting chip 2 and the wire 4, and the wire 4 are pulled by the transparent epoxy resin 5 having a large thermal expansion. The electrical connection state of the other lead 3b decreases, and the failure rate due to electrical contact failure increases. In particular, the bonding (second bond) between the wire 4 and the other lead 3b was weak, and the wire was often broken here. As described above, under the current situation where the defect rate is high even with a small LED of 3 mm or less, it is difficult to commercialize a large LED of about 5 mm or more.

On the other hand, for example, Japanese Patent Publication No. 3-2503
As described in Japanese Patent Application Publication No. 3 (1993) -3, the light emitting chip of the light emitting diode is sealed with an epoxy resin having a high flexural modulus to prevent a large residual strain from causing deterioration due to energization. A technique has been developed in which a light emitting chip is sealed with a low epoxy resin, and then the outside thereof is sealed with an epoxy resin having a high flexural modulus. But,
Also in this technique, as shown in FIG. 1 of the above publication, the weakest second bond portion is not covered with an epoxy resin (precoat resin) having a low flexural modulus.
The problem that disconnection easily occurs during surface mounting cannot be solved at all.

[0007] The same applies to photodiodes and phototransistors, which are light receiving elements having the same configuration. Light emitting elements which are exposed to thermal stress due to temperature changes of surface-mounted components and the like, LEDs, PD, and light receiving elements which are light receiving elements.
In the light-emitting / receiving element using PT or a combination thereof, there has been a problem of reduction of the defective rate and enlargement of the product.

[0008] Therefore, an object of the present invention is to provide a solid-state optical element having a temperature resistance that enables a reduction in the defective rate and an increase in the size of a product, that is, a light-emitting diode, a light-receiving element, a light-receiving and light-emitting element, and the like. Things.

[0009]

According to a first aspect of the present invention, there is provided a solid-state optical device, comprising: a solid-state light receiving / emitting chip; an electric unit for receiving and supplying power to the solid-state light receiving / emitting chip; And a light-transmitting material forming an optical surface, wherein the solid-state light-receiving / emitting chip and / or the electrical connection portion of the electric means are covered with the light-transmitting elastic material, and the periphery thereof is further provided. It is covered with the light transmitting material.

According to the solid-state optical device having such a configuration, since the solid-state light receiving / emitting chip and / or the electrical connection portion of the electrical means are all covered with the light-transmitting elastic material, the solid-state optical device can be used in a high-temperature environment such as during surface mounting. Alternatively, even when the temperature changes suddenly, the thermal stress due to the light-transmitting material is reduced, and no tensile force is applied to the electrical connection portion. Therefore,
Prevents the deterioration of the electrical connection state in high-temperature environments or sudden changes in temperature, thereby reducing the failure rate due to poor electrical contact. There is no danger of failure, and it can withstand practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product can be obtained.

According to a second aspect of the present invention, there is provided a solid-state optical device, comprising: a solid-state light receiving / emitting chip; electric means for receiving and supplying power to the solid-state light-receiving / emitting chip; And a light transmitting elastic material, and a light transmitting material forming an optical surface, wherein the solid light receiving / emitting chip and the electric connecting means or the electric connecting means are electrically connected to each other. And at least one of the electrical means is covered with the light-transmitting elastic material, and the periphery thereof is further covered with the light-transmitting material.

According to the solid-state optical device having such a configuration, at least one of the electrical connection means between the solid-state light receiving / emitting chip and the electrical connection means or the electrical connection means and the electrical means is entirely made of the light transmitting elastic material. Because it is covered, even in a high temperature environment such as surface mounting or a sudden temperature change, the thermal stress due to the light transmitting material is relaxed, and a tensile force may be applied to the electrical connection part of the electrical connection means Absent. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this manner, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product is obtained.

According to a third aspect of the present invention, in the solid-state optical device according to the first or second aspect, the electric means is a lead made of a metal member.

As described above, when a lead made of a metal member is used as the electrical means, the difference in the coefficient of thermal expansion between the lead and the light-transmitting material becomes large, and the electrical connection is made under a high-temperature environment or when the temperature changes rapidly. The state is apt to deteriorate. However, in the solid-state optical device of the present invention, since all the electrical connection portions between the solid-state light receiving / emitting chip and the lead made of the metal member are covered with the light-transmitting elastic material, the solid-state optical device can be used in a high-temperature environment such as during surface mounting or abruptly. Even when the temperature changes
The thermal stress due to the difference in the coefficient of thermal expansion between the metal lead and the light transmissive material is reduced, and no tensile force is applied to the electrical connection. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this manner, a solid-state optical device having a temperature-resistant property capable of reducing the defective rate and increasing the size of the product is obtained.

According to a fourth aspect of the present invention, there is provided the solid-state optical device according to the third aspect, wherein a portion of the lead on which the solid-state light emitting / receiving chip is mounted is a concave reflecting mirror. The surface is covered with the light-transmitting elastic material.

In a solid-state optical device having such a reflecting mirror, not only the electrical connection portion but also the reflecting surface of the reflecting mirror receives thermal stress in a high-temperature environment or when a rapid temperature change occurs, so that the reflecting surface is fogged. As a result, the linear reflectance decreases, and the radiation efficiency or the incident efficiency decreases. Therefore, by covering the reflecting surface of the reflecting mirror with the light transmitting elastic material as well as the electrical connection portion, thermal stress can be reduced and it is possible to prevent the reflecting surface from fogging. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

In this way, a solid-state optical device can be provided which can not only reduce the defective rate due to poor electrical contact but also improve the radiation efficiency or the incident efficiency.

According to a fifth aspect of the present invention, in the solid-state optical device according to the second aspect, the electrical connection means is a wire made of a metal member.

In the solid-state optical device having such a configuration, a tensile force is applied to a metal wire due to thermal stress in a high-temperature environment or when a rapid temperature change occurs, thereby connecting the solid-state light emitting / receiving chip to the wire and the electrical means to the wire. The part is easy to remove. However, in the solid-state optical device of the present invention,
Since the electrical connection portion including the wires between the solid-state light receiving / emitting chip and the electrical means is entirely covered with the light-transmitting elastic material, the thermal stress is relaxed even in a high-temperature environment or a sudden temperature change. No pulling force is applied to Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this manner, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product can be obtained.

According to a sixth aspect of the present invention, in the solid-state optical device according to the fifth aspect, a recess is formed in the electric means, and an electrical connection between the wire and the electric means is made in the recess. Is what it is.

As a result, the light-transmitting elastic material accumulates in the concave portions, and the connection portion (second bond) between the wire and the electric means is covered with a sufficient amount of the light-transmitting elastic material. In this manner, the second bond, which is the weakest and is easily broken by thermal stress, can be sufficiently covered with the light-transmitting elastic material.
The thermal stress is further alleviated, and no tensile force is applied to the wire. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, to further reduce a failure rate due to poor electrical contact, and to enlarge an optical surface made of a light-transmitting material. Also, there is no possibility that electrical contact failure occurs, and the device can be sufficiently put into practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of further reducing the defect rate and increasing the size of the product is obtained.

According to a seventh aspect of the present invention, there is provided a solid-state optical device, wherein one of the solid-state light-receiving and light-emitting chip and a pair of leads for receiving and supplying power to the solid-state light-emitting and light-emitting chip mounts the solid state light-emitting and light-emitting chip. A lead, the other one of the pair of leads, a wire for electrically connecting the other lead to the solid-state light receiving and emitting chip, and a wire connecting the solid-state light receiving and emitting chip, the wire, and the pair of leads. A light-transmissive material that seals a part of the solid-state light-emitting chip, wherein an optical surface is formed by the light-transmissive material, and the solid-state light receiving and emitting chip is provided inside the light-transmissive material. And the wire and a part of the pair of leads are covered with a light-transmitting elastic material.

According to the solid-state optical device having such a configuration, since all the electrical connection portions between the solid-state light receiving / emitting chip and the leads are covered with the light-transmitting elastic material, the solid-state optical device can be used even in a high-temperature environment or when the temperature changes rapidly. In addition, the thermal stress due to the difference in the coefficient of thermal expansion between the lead and the sealing material is reduced, and no tensile force is applied to the electrical connection portion. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product can be obtained.

The solid-state optical device according to the invention of claim 8 includes a solid-state light-receiving / emitting chip, an electric means for receiving and supplying power to the solid-state light-receiving / emitting chip, a light-transmitting elastic material, and an optical surface. And a reflecting mirror, wherein the reflecting surface of the reflecting mirror is covered with the light transmitting elastic material, and the periphery thereof is further covered with the light transmitting material. .

In a solid-state optical device having such a reflecting mirror, in a high-temperature environment or when the temperature changes rapidly, the reflecting surface of the reflecting mirror is also subjected to thermal stress and fogging occurs on the reflecting surface, resulting in a decrease in linear reflectance. As a result, the radiation efficiency or the incident efficiency decreases. Therefore, by covering the reflecting surface of the reflecting mirror with a light-transmitting elastic material, it is possible to prevent thermal stress from being reduced and to prevent the reflecting surface from fogging. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

In this manner, a solid-state optical device can be provided in which the defect rate due to the fogging of the reflecting mirror can be reduced and the radiation efficiency or the incident efficiency can be improved.

According to a ninth aspect of the present invention, in the solid-state optical device according to the eighth aspect, the reflecting mirror is formed of a metal.

The reflecting mirror made of such a metal has an advantage that it is easy to make. On the other hand, the difference in the coefficient of thermal expansion between the light-transmitting material and the light-transmitting material becomes large, and the reflection surface of the reflecting mirror tends to fog in a high-temperature environment or when the temperature changes rapidly. Therefore, by covering the reflecting surface of the reflecting mirror with a light-transmitting elastic material, it is possible to prevent thermal stress from being reduced and to prevent the reflecting surface from fogging. Particularly, in the case of the reflecting mirror made of the metal of the present invention, there is a great effect.

In this manner, a solid-state optical device can be provided in which the defect rate due to the fogging of the reflecting mirror can be reduced and the radiation efficiency or the incident efficiency can be improved.

The solid-state optical device according to claim 10 is
In any one of claims 1 to 9,
The optical surface has a convex lens shape.

As described above, in the solid-state optical device according to the present invention, since all the electrical connection portions are covered with the light-transmitting elastic material inside the light-transmitting material, the thermal stress is reduced and the product becomes large. Has become possible. As a result, the size of the optical surface is increased, so that the convex lens portion is also enlarged by forming the optical surface into a convex lens shape, and a solid-state optical element having a sufficient optical focusing effect is obtained.

In this way, a solid-state optical device can be obtained which can not only reduce the defective rate but also obtain a sufficient light-collecting effect.

The solid-state optical device according to claim 11 is
In any one of the first to tenth aspects, the width of the optical surface exceeds 3 mm.

In a conventional solid-state optical device directly sealed with a light-transmitting material, when the width of the optical surface exceeds 3 mm, the solid-state light-emitting / receiving chip is electrically connected to the solid-state light-emitting / receiving chip due to thermal stress in a high-temperature environment or a sudden temperature change. As a result, the electrical connection state with the physical means deteriorated and practical use was not possible. However, in the solid-state optical device according to the present invention, since all the electrical connection portions are covered with the light-transmitting elastic material inside the light-transmitting material, the light can be output even in a high-temperature environment or when a sudden temperature change occurs. Thermal stress due to the permeable material is reduced, and no tensile force is applied to the electrical connection portion. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or when the temperature is rapidly changed, and to reduce a defective rate due to poor electrical contact.

Thus, a large-sized solid-state optical element having an optical surface width exceeding 3 mm, that is, a light-emitting diode, a light-receiving element, a light-emitting / receiving element, and the like can be sufficiently put into practical use. In particular, in the case of a reflective light emitting diode, if the diameter is small, more light is blocked by a light emitting chip or a lead, but a large reflective light emitting diode exceeding 3 mm can achieve excellent radiation characteristics.

According to a twelfth aspect of the present invention, there is provided a solid-state optical device comprising:
The structure according to any one of claims 1 to 11, further comprising a reflecting mirror provided to face a light receiving / emitting surface of the solid state light receiving / emitting chip.

In a solid-state optical device having such a reflecting mirror, not only the electrical connection portion but also the reflecting surface of the reflecting mirror receives thermal stress in a high-temperature environment or when the temperature changes rapidly, and the material of the reflecting mirror In some cases, the reflection surface is fogged, the linear reflectance is reduced, and the radiation efficiency or the incident efficiency is reduced. Therefore, by covering the reflecting surface of the reflecting mirror with the light transmitting elastic material as well as the electrical connection part,
It is possible to prevent the reflection surface from fogging due to relaxation of the thermal stress. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

Incidentally, in the case of a reflecting mirror or the like obtained by pressing an aluminum plate, no fogging occurs on the reflecting surface even in a high-temperature environment or a sudden temperature change. Therefore, only the electrical connection portion is made of a light-transmitting elastic material. Just cover it. In addition, the relaxation of thermal stress has made it possible to increase the size of the product. In particular, in a so-called reflective solid-state optical device such as the present invention, if the diameter of the reflecting mirror is small, the solid-state light receiving / emitting chip or lead While large amounts of light are blocked by the light, a large reflective solid-state optical device can realize excellent radiation characteristics or incident characteristics.

In this manner, a solid-state optical device is provided which can not only reduce the defective rate due to poor electrical contact but also improve the radiation efficiency or the incident efficiency.

The solid state optical device according to the invention of claim 13 is
In the structure according to any one of claims 1 to 12, the light-transmitting material is a transparent epoxy resin.

Under a high temperature condition of a glass transition point or more such as 200 ° C. or more in a reflow furnace at the time of surface mounting, the transparent epoxy resin is at least 10 times as large as copper or iron which is usually used as a lead material. The coefficient of thermal expansion was large, and therefore the thermal stress exerted on the electrical connection part was also large, and the defect occurrence rate during surface mounting was high. However, the transparent epoxy resin is excellent in fluidity before filling, filling property, transparency after curing, weather resistance, strength, and the like, and is suitable as a sealing resin.
Therefore, as in the present invention, by covering the electrical connection portion or the reflecting surface of the reflecting mirror with a light-transmitting elastic material inside the transparent epoxy resin, the thermal stress is relieved, and excellent characteristics as a sealing resin are obtained. A practical solid-state optical device can be produced using the transparent epoxy resin having the same.

The solid-state optical device according to claim 14 is:
In any one of the first to thirteenth aspects, the light-transmitting elastic material is a transparent silicone resin.

The transparent silicone resin is soft and excellent in elasticity, and is a material suitable for relieving thermal stress. Moreover,
In order to cover the electrical connection portion and the like, it is possible not only to cure as a lump but also to spray and coat, so it is suitable for covering the reflecting surface of the reflecting mirror, and the manufacturing time can be reduced.

As described above, by using the transparent silicon resin as the light transmitting elastic material, it is possible to cover the electrical connection portion and the reflecting surface of the reflecting mirror in a short time, so that the solid-state light can be easily used. An element, that is, a light emitting diode, a light receiving element, a light receiving and emitting element, and the like can be manufactured.

According to a fifteenth aspect of the present invention, there is provided a solid-state optical device comprising:
In any one of the first to fourteenth aspects, the component is a surface-mounted component.

At the time of surface mounting, the surface mounting components are at 200 ° C.
Due to the above reflow furnace, the difference in the coefficient of thermal expansion between the light-transmitting material and the electrical means and / or the reflecting mirror increases in a high-temperature environment, and the electrical connection between the solid-state light receiving / emitting chip and the electrical means is increased. A large thermal stress is applied to the connection part and / or the reflecting surface of the reflecting mirror. However, in the solid-state optical device of the present invention,
Since the electrical connection between the solid-state light receiving / emitting chip and the electrical means and / or the reflecting surface of the reflector are covered with a light-transmitting elastic material, the heat generated by the light-transmitting material even in a high-temperature environment during surface mounting. Stress is relieved. Therefore, it is possible to prevent a decrease in the electrical connection state or fogging of the reflection surface of the reflector in a high-temperature environment, and to reduce a failure rate due to poor electrical contact or a decrease in the linear reflectance. In addition, even if the optical surface made of a light-transmitting material is enlarged, there is no possibility that electrical contact failure occurs, and the optical surface can sufficiently be put to practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product is obtained.

[0054]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a solid-state optical device according to the present invention will be described as an embodiment of a light emitting diode, a light receiving device, and a light receiving and emitting device.

First Embodiment First, a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the first embodiment of the present invention. FIG.
(A) is a plan view showing the configuration of the tip of the other lead of the light emitting diode according to the modification of the first embodiment of the present invention, and (b) is a longitudinal sectional view thereof.

As shown in FIG. 1, a light-emitting diode 1 as a solid-state optical element according to the first embodiment has a pair of leads as electric means for supplying power to a light-emitting chip 2 as a solid-state light-receiving / emitting chip. The light emitting chip 2 is mounted on one of the leads 3a among the leads 3a and 3b via a silver paste,
After the leads 3a, 3b and the light emitting chip 2 are electrically connected by bonding with two gold wires 4a, 4b, the light emitting chip 2, the tips of the leads 3a, 3b, the wire 4
A transparent silicon resin 7 is sprayed on a and 4b, and these electrically connected portions are covered with the transparent silicon resin 7.
Thereafter, these are sealed with a transparent epoxy resin 5 and the light emitting surface 6 as an optical surface having a convex lens shape is molded on the light emitting surface side of the light emitting chip 2.

That is, the difference between the LED 1 of the first embodiment and the conventional LED 61 shown in FIG. 11 described above is that, inside the transparent epoxy resin Only the points covered by. Here, the light emitting chip 2 is a GaN-based LED chip, and the pair of leads 3a and 3b are formed by plating a copper plate with silver. After the LED 1 having such a configuration is automatically mounted on a substrate to which cream solder is applied,
Soldering is performed by passing through a reflow furnace at 00 ° C. or higher.

However, in the LED 1 according to the first embodiment, the electrical connection between the light emitting chip 2 and the leads 3a, 3b is entirely made of the transparent silicon resin 7 made of a light transmitting elastic material.
Therefore, even under a high-temperature environment of 200 ° C. or more during surface mounting, the thermal stress due to the difference in the coefficient of thermal expansion between the leads 3 a and 3 b and the transparent epoxy resin 5 as a sealing material is alleviated. No pulling force is applied to the connection part. Thus, disconnection due to thermal stress during surface mounting can be prevented, and the failure rate due to poor electrical contact can be reduced.

The size L1 of the resin sealing portion is 3 mm
Even if the LED 1 is large, the leads 3a, 3 are formed by the transparent silicon resin 7 covering the electrical connection portion.
Since the thermal stress due to the difference in the coefficient of thermal expansion between b and the transparent epoxy resin 5 is reduced, and no tensile force is applied to the electrical connection portion, no disconnection occurs during the reflow furnace treatment, and the convex lens portion 6 is attached. Therefore, even if the capacity of the sealing resin is increased, practical use is sufficiently possible. Further, this also increases the diameter of the convex lens portion 6, but since the light-gathering characteristics of the lens depend on the lens size with respect to the size of the light-emitting chip 2, the surface-mounted LED with excellent light-gathering characteristics (higher light-gathering power). Can be created.

Incidentally, conventionally, in a GaAs LED chip, a transparent silicon resin is coated on the LED chip in order to reduce a reduction in life due to a contraction stress of a sealing resin. On the other hand, since the GaN-based LED chip 2 has a high resistance to the shrinkage stress of the sealing resin and has a negligible effect on the life, the transparent silicon resin coating has not been performed. However, as described above, in the surface-mounted LED 1, by applying the transparent silicon resin coat 7 not only to the GaN-based LED chip 2 but also to all of the electrical connection portions, the thermal stress during the reflow furnace treatment is reduced, and the defect rate is reduced. And the size of the element can be increased. Needless to say, the same effect can be obtained also in a surface-mount type LED on which a GaAs-based LED chip is mounted by applying a transparent silicon resin coat to all the electrical connection portions.

Next, a light emitting diode according to a modification of the first embodiment of the present invention will be described with reference to FIG.

As shown in FIG. 2, in a modification of the first embodiment, the other lead 3
A concave portion 3c is provided at the tip of b, and a wire 4b is bonded to the other lead 3b at the bottom surface of the concave portion 3c. The transparent silicon resin 7 is spray-coated from above. As a result, the transparent silicon resin 7 accumulates in the recess 3c, and the bonding portion (second bond) between the wire 4b and the other lead 3b is covered with a sufficient amount of the transparent silicon resin 7. In this manner, in the modification of the first embodiment, the second bond which is the weakest and is likely to be broken by thermal stress can be sufficiently covered with the elastic transparent silicon resin 7, so that the breakage during the reflow furnace processing can be achieved. Can be more reliably prevented,
It is possible to further reduce the defect rate during surface mounting.

In addition, a similar effect can be obtained by providing a recess on one lead 3a on the second bond side of the wire 4a in the same manner as the other lead 3b and spraying the transparent silicon resin 7.

Next, a light emitting diode according to another modification of the first embodiment of the present invention will be described with reference to FIG. FIG. 3 is a partially enlarged view showing a light emitting diode according to another modification of the first embodiment of the present invention.

As shown in FIG. 3, in another modification of the first embodiment, a Zener diode 9 for preventing electrostatic breakdown is used. That is, the light emitting chip 2 is electrically connected to the Zener diode 9 by gold bumps 8, and the Zener diode 9 having the light emitting chip 2 mounted on the tip of one lead 3a is mounted using silver paste. And the other lead 3b are electrically connected by the gold wire 4. Then, the whole is coated with the transparent silicon resin 7. As described above, by mounting the light emitting chip 2 via the Zener diode 9, electrostatic breakdown is prevented, and a more reliable light emitting diode is obtained.

Next, a light emitting diode according to another modification of the first embodiment of the present invention will be described with reference to FIG. FIG. 4 is a partially enlarged view showing a light emitting diode according to another modification of the first embodiment of the present invention.

As shown in FIG. 4, in another modification of the first embodiment, the distance between a pair of leads 3a and 3b is reduced and the gold bumps 8 are bridged so as to bridge therebetween.
The light-emitting chip 2 is mounted via the. And
The whole is coated with the transparent silicon resin 7. As described above, simply performing the electrical connection using only the bumps 8 has an advantage that the structure is simplified and the manufacturing is facilitated. The electrical connection may be made by using solder or silver paste instead of the bump 8.

In the first embodiment, the light-emitting diode 1 as a solid-state optical element has been described as a surface-mounted component. However, the present invention is not limited to this, and the present invention is also effective as other components requiring a change in temperature resistance. Further, the light emitting chip 2 may not be coated, and may be coated only at the bonding portion (second bond).

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. 1 according to the first embodiment.

The photodiode as a light receiving element, which is a solid-state optical element according to the second embodiment of the present invention, differs from the photodiode of FIG. 1 only in that the light emitting chip 2 as the solid state light receiving / emitting chip is replaced by a PD chip. The structure is exactly the same. That is, light incident from the light incident surface 6 as an optical surface having a convex lens shape is condensed on the light receiving surface of the PD chip 2 by the light converging effect of the light incident surface 6, converted into electric power by the PD chip 2, The signal is output from a pair of leads 3a and 3b as a means.

Here, the tips of the pair of leads 3a, 3b,
Since the transparent silicon resin 7 is sprayed on the PD chip 2 and the wires 4 and all the electrical connection portions are covered with the elastic transparent silicon resin 7, the leads 3a and 3b and the transparent epoxy are used during the reflow furnace treatment. Resin 5
The thermal stress due to the difference in the coefficient of thermal expansion is relaxed, and no tensile force is applied to the electrical connection portion. Therefore, disconnection does not occur during the reflow furnace processing, the failure rate due to poor electrical contact is reduced, and the element can be made larger.

As described above, in the photodiode as the surface mount component, the defect rate can be reduced and the size of the product can be increased. In the second embodiment, the photodiode has been described as a light receiving element, but the same applies to a phototransistor. That is, in FIG. 1, only the light emitting chip 2 is replaced with a PT chip, and the structure of other parts is the same, and the same effect as that of the photodiode can be obtained.

Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIG.

FIG. 5A is a plan view showing the entire structure of the light emitting and receiving element according to the third embodiment of the present invention, FIG. 5B is a front view, and FIG. 5C is a left side view.

As shown in FIG. 5, a light receiving / emitting element 71 as a solid-state optical element according to the third embodiment has a pair of leads 63a, 63b and 73a, 73b as electric means arranged in parallel. A light emitting chip 62 as a solid light receiving / emitting chip is mounted on one of the leads 63a,
A PD chip as a solid-state light receiving / emitting chip is mounted on the other lead 73a, and the other lead
3b and 73b are bonded to the wires 64 and 74 to establish electrical connection, and then these electrically connected portions are sprayed with transparent silicon resin 67 and 77, respectively.
The electrical connection portion is covered with the transparent silicone resin 67, 77. Then, the whole is sealed with a transparent epoxy resin 65, and a light emitting surface 66 and a light incident surface 76 in the form of a convex lens as optical surfaces are molded.

The light receiving / emitting element 71 faces two light receiving / emitting elements such that light emitted from the light emitting chip 62 of one light receiving / emitting element is received by the PD chip 72 of the other light emitting / receiving element. It is used for applications such as transmitting and receiving data by light.

Also in this light receiving / emitting element 71, when passing through a reflow furnace at the time of surface mounting, all the electrical connection portions are covered with the elastic transparent silicone resin 67, 77, and therefore the leads 63a, 63b, 73a. , 73b
The thermal stress caused by the difference in the coefficient of thermal expansion between the transparent epoxy resin 65 and the transparent epoxy resin 65 is alleviated, so that a pulling force that reduces the connection state of the electrical connection portion is not applied. Therefore, disconnection does not occur during the reflow furnace processing, the failure rate due to poor electrical contact is reduced, and the element can be made larger.

As described above, in the light emitting / receiving element as a surface mount component, it is possible to reduce the defective rate and increase the size of the product.

Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to FIG.

FIG. 6 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the fourth embodiment of the present invention.

As shown in FIG. 6, a light emitting diode 11 as a solid-state optical element according to the fourth embodiment has a pair of leads as electric means for supplying power to a light-emitting chip 12 as a solid-state light receiving / emitting chip. The light-emitting chip 12 is mounted on one of the leads 13a of the light-emitting chips 13a and 13b, and the other lead 13b and the light-emitting chip 12 are electrically connected by bonding with the wires 14.
The tip of one lead 13a, the tip of the wire 14 and the tip of the other lead 13b are sealed with a transparent silicone resin 17. After that, the outside is further sealed with a transparent epoxy resin 15 and the light emitting surface 16 as an optical surface having a convex lens shape is molded on the light emitting surface side of the light emitting chip 12.

Thus, the effect of alleviating the thermal stress is further enhanced as compared with the case where the transparent silicon resin 7 is sprayed on the electrical connection portion as in the LED 1 of the first embodiment to form a film of the transparent silicon resin 7. That is, LED
When passing through the reflow furnace during the surface mounting of 11, the electrical connection portion and its surroundings are all covered with a lump of elastic transparent silicon resin 17, so that the leads 13 a, 1
The thermal stress due to the difference in the coefficient of thermal expansion between the transparent epoxy resin 3b and the transparent epoxy resin 15 is further alleviated, and no tensile force is applied to the electrical connection portion. Therefore, disconnection does not occur at the time of reflow furnace processing, the failure rate due to poor electrical contact is further reduced, and the LED can be made larger.

As described above, in the light emitting diode as a surface mount component, it is possible to further reduce the defect rate and to increase the size of the product.

Fifth Embodiment Next, a fifth embodiment of the present invention will be described with reference to FIG.

FIG. 7 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the fifth embodiment of the present invention.

As shown in FIG. 7, a light emitting diode 21 as a solid-state optical element according to the fifth embodiment has a pair of leads as electric means for supplying power to a light-emitting chip 22 as a solid-state light receiving / emitting chip. After the light emitting chip 22 is mounted on one of the leads 23a of the light emitting chips 23a and 23b, and the other lead 23b and the light emitting chip 22 are electrically connected by bonding with the wire 24, the light emitting chip 22,
The tip of one lead 23a, the wire 24 and the tip of the other lead 23b are sealed with a transparent silicon resin 27. Thereafter, the outside is further sealed with a transparent epoxy resin 25 and the light emitting surface 26 as an optical surface having a convex lens shape is molded on the light emitting surface side of the light emitting chip 22.

The LED 21 of the fifth embodiment differs from the LED 11 of the fourth embodiment in that the lower surface of the transparent silicon resin 27 is not covered with the transparent epoxy resin 25. According to this, a lens surface is formed with the transparent epoxy resin 25 on the lead 23a on which the light emitting chip 22 is mounted, and thereafter, the sealing with the transparent silicon resin 27 becomes possible. For this reason, a gel-like silicon resin or the like can be provided as a lump at the electrical connection portion, and the leads 23a, 23
The thermal stress due to the difference in the coefficient of thermal expansion between b and the transparent epoxy resin 25 is further alleviated, and no tensile force is applied to the electrical connection portion. Therefore, disconnection does not occur at the time of reflow furnace processing, the failure rate due to poor electrical contact is further reduced, and the LED can be made larger.

Sixth Embodiment Next, a sixth embodiment of the present invention will be described with reference to FIG.

FIG. 8 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the sixth embodiment of the present invention.

As shown in FIG. 8, a light emitting diode 31 as a solid-state optical element according to the sixth embodiment has a pair of leads as electric means for supplying power to a light-emitting chip 32 as a solid-state light receiving / emitting chip. Of the leads 33a and 33b, the tip of one lead 33a is a concave reflecting mirror 33c. Then, the light emitting chip 32 is mounted on the bottom surface of the reflecting mirror 33c, and the other lead 33b and the light emitting chip 32 are electrically connected by bonding with the wire 34. Then, the light emitting chip 32 and the tip of one of the leads 33a are formed. A transparent silicon resin 37 is sprayed on the portion (the reflecting surface of the reflecting mirror 33c), the wire 34, and the tip of the other lead 33b, and the entire electrical connection portion is covered with the transparent silicon resin 37.

Thereafter, the outside is further sealed with a transparent epoxy resin 35, and the light emitting surface 36 as an optical surface having a planar shape is molded on the light emitting surface side of the light emitting chip 32. The reflecting mirror 33c is connected to one of the leads 3
3a, the copper plate is mirror-polished and silver-plated. The light emitted from the light emitting surface of the light emitting chip 32 in a substantially horizontal direction is also reflected to the light emitting surface 36 side. Thus, the external radiation efficiency is improved.

In the LED 31 of the sixth embodiment,
Not only the electrical connection part but also the concave reflecting surface of the reflecting mirror 33c is covered with the transparent silicon resin 37. LED
When 31 is passed through a reflow furnace for surface mounting, the reflecting surface of the reflecting mirror 33c also becomes cloudy due to stress at the time of heating, and the linear reflectivity decreases, thereby reducing the external radiation efficiency. Therefore, by covering the reflecting surface of the reflecting mirror 33c as well as the electrical connection portion with the transparent silicon resin 37, which is a light-transmitting elastic material, the stress at the time of heating is reduced, and the reflecting surface is prevented from fogging. be able to. In particular, there is a great effect in the case of a reflecting mirror made by plating or a reflecting mirror having a large size.

In this way, a light emitting diode as a surface mount component that can not only reduce the failure rate due to poor electrical contact but also improve external radiation efficiency. Since the size of the element can be increased by the effect of relaxing the thermal stress by the transparent silicon resin 37, the size of the reflecting mirror 33c can also be increased. As described above, the larger the size of the reflecting mirror 33c, the higher the optical control characteristics, and the further the external radiation efficiency can be further improved.

Seventh Embodiment Next, a seventh embodiment of the present invention will be described with reference to FIG.

FIG. 9 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the seventh embodiment of the present invention.

As shown in FIG. 9, a light emitting diode 41 as a solid-state optical element according to the seventh embodiment also has a pair of leads as electric means for supplying power to a light-emitting chip 42 as a solid-state light receiving / emitting chip. Of the leads 43a and 43b, the tip of one lead 43a is a concave reflecting mirror 43c. Then, the light emitting chip 42 is mounted on the bottom surface of the reflecting mirror 43c, and the other lead 43b and the light emitting chip 42 are bonded to each other with a wire 44 for electrical connection. The transparent silicon resin 47 is sprayed on the portion (the reflecting surface of the reflecting mirror 43c), the wire 44, and the tip of the other lead 43b, and all the electrical connection portions and the reflecting surface of the reflecting mirror 43c are covered with the transparent silicon resin 47. Covering.

Thereafter, the outside is further sealed with a transparent epoxy resin 45, and the light emitting surface 46 as an optical surface having a large convex lens shape is molded on the light emitting surface side of the light emitting chip 42. The reflecting mirror 43c is formed by mirror-polishing and silver-plating a copper plate as in the sixth embodiment. In this way, by covering the reflecting surface of the reflecting mirror 43c together with the electrical connection portion with the transparent silicon resin 47, which is a light-transmitting elastic material, the stress at the time of heating is alleviated, and the fogging of the reflecting surface is prevented. Can be prevented.

Since the reflecting mirror 43c and the large lens 46 are provided as described above, the light emitted from the light emitting chip 42 can be effectively controlled and emitted to the outside while being collected. Furthermore, since the size of the convex lens 46 with respect to the light emitting chip 42 is large, high light-collecting properties can be obtained. In this way, a surface-mounted light-emitting diode having not only a reduced defect rate during surface mounting but also excellent optical control characteristics and high external radiation efficiency can be obtained.

When the diameter of the lens portion 46 of the LED 41 of the seventh embodiment is 5 mm, the same characteristics as those of the most standard lens-sealed φ5 LED, which is a discrete component that does not pass through a reflow furnace. Can be realized. According to this, mounting can be facilitated and mounting direction accuracy can be improved.

Eighth Embodiment Next, an eighth embodiment of the present invention will be described with reference to FIG.

FIG. 10 is a longitudinal sectional view showing the entire structure of the light emitting diode according to the eighth embodiment of the present invention.

As shown in FIG. 10, the eighth embodiment
The light-emitting diode 51 as a solid-state optical element is provided with a light-emitting chip on the lower surface of one of the leads 53a and 53b as an electric means for supplying power to the light-emitting chip 52 as a solid-state light-receiving / emitting chip. After the second lead 52b is mounted and the other lead 53b and the light emitting chip 52 are electrically connected by bonding with a wire 54, the light emitting chip 52, the tip of one lead 53a, the wire 54 and the tip of the other lead 53b are The transparent silicon resin 57 is sprayed, and these electrical connection portions are covered with the transparent silicon resin 57. On the other hand, a concave reflecting mirror 58 formed by press-molding a metal plate is attached to a position facing the light emitting surface of the light emitting chip 52, and a transparent silicon resin 57 is sprayed on the reflecting surface of the reflecting mirror 58 as well. The surface is covered with a transparent silicon resin 57. Thereafter, these are sealed with a transparent epoxy resin 55 and the light emitting chips 52
Emitting surface 5 as an optical surface having a planar shape on the back side of
6 is molded.

The reflecting mirror 58 is formed by pressing a brass plate into a concave shape and subjecting the concave surface to silver plating. The reflecting mirror 58 is formed in a substantially paraboloid of revolution shape, and is sealed with a transparent epoxy resin 55. The light emitting chip 52 is located at the focal point of the paraboloid of revolution. Therefore, all the light emitted from the light emitting chip 52 becomes reflected light parallel to the axis of the paraboloid of revolution by the reflecting mirror 58 and is emitted from the light emitting surface 56 on the back surface of the light emitting chip 52.

In such a so-called reflective LED 51, when a reflow furnace is used for surface mounting, not only the electrical connection portion but also the reflective mirror 5 receives thermal stress.
The reflecting surface of No. 8 is also fogged by the stress at the time of heating, the linear reflectance is reduced, and the external radiation efficiency is reduced. Therefore, by covering the reflecting surface of the reflecting mirror 58 together with the electrical connection portion with the transparent silicon resin 57 which is a light-transmitting elastic material, the stress at the time of heating is reduced, and the reflecting surface is prevented from fogging. be able to. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

Although the size of the element can be increased by relaxing the stress at the time of heating by the transparent silicon resin 57, especially in the reflection type LED, if the diameter of the reflection mirror is small, the light emitting chip 52 and the lead While the light blocked by 53a and 53b increases, a large reflective L
ED can realize excellent radiation characteristics.

As described above, the light emitting diode as a surface mount component not only can reduce the defective rate due to poor electrical contact but also can improve the external radiation efficiency.

In each of the above embodiments, the light-emitting diode, light-receiving element, and light-receiving / emitting element as solid-state optical elements have been described as surface-mounted components. However, the present invention is not limited to this. It is valid.

Also, in each of the above embodiments, an example was described in which a transparent epoxy resin was used as the light-transmitting material for sealing the resin. However, the fluidity before filling, the filling property, the transparency after curing, Any light-transmitting resin may be used as long as it satisfies conditions such as strength. Furthermore, although an example in which transparent silicon resin is used as the light transmitting elastic material has been described, any material may be used as long as it has light transmitting properties and elasticity and can reduce thermal stress.

In each of the above embodiments, a pair of leads is formed by plating a copper plate with silver.
In addition, various materials such as a silver-plated iron plate and an aluminum plate can be used.

Further, in the eighth embodiment, a brass plate is pressed into a concave shape and subjected to a silver plating process as the reflecting mirror. Alternatively, an aluminum plate is formed into a concave shape. Pressed ones can be used.

The configuration, shape, material, and the like of the light emitting diode, the light receiving element, and other parts of the light receiving and emitting element as the solid state optical element,
The quantity, size, connection relationship, and the like are not limited to the above embodiments.

[0113]

As described above, the solid-state optical device according to the first aspect of the present invention comprises a solid-state light receiving / emitting chip, an electric means for supplying and receiving power to and from the solid-state light receiving / emitting chip, An elastic material and a light-transmitting material forming an optical surface, wherein an electric connection portion of the solid-state light receiving / emitting chip and / or the electric means is covered with the light-transmitting elastic material; Is further covered with the light transmitting material.

According to the solid-state optical device having such a configuration, since the solid-state light receiving / emitting chip and / or the electrical connection portions of the electrical means are all covered with the light-transmitting elastic material, the solid-state optical device can be used in a high-temperature environment such as during surface mounting. Alternatively, even when the temperature changes suddenly, the thermal stress due to the light-transmitting material is reduced, and no tensile force is applied to the electrical connection portion. Therefore,
Prevents the deterioration of the electrical connection state in high-temperature environments or sudden changes in temperature, thereby reducing the failure rate due to poor electrical contact. There is no danger of failure, and it can withstand practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product is obtained.

A solid-state optical device according to a second aspect of the present invention comprises: a solid-state light-receiving / emitting chip; electrical means for receiving and supplying power to the solid-state light-emitting / receiving chip; And a light transmitting elastic material, and a light transmitting material forming an optical surface, wherein the solid light receiving / emitting chip and the electric connecting means or the electric connecting means are electrically connected to each other. And at least one of the electrical means is covered with the light-transmitting elastic material, and the periphery thereof is further covered with the light-transmitting material.

According to the solid-state optical device having such a configuration, at least one of the electrical connection means and the electrical connection means and / or the electrical connection means between the electrical connection means and the electrical means is entirely made of a light-transmitting elastic material. Because it is covered, even in a high temperature environment such as surface mounting or a sudden temperature change, the thermal stress due to the light transmitting material is relaxed, and a tensile force may be applied to the electrical connection part of the electrical connection means Absent. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this way, a solid-state optical element having a temperature-resistant property capable of reducing the defective rate and increasing the size of the product can be obtained.

According to a third aspect of the present invention, in the solid-state optical device according to the first or second aspect, the electric means is a lead made of a metal member.

As described above, when a lead made of a metal member is used as the electrical means, the difference in the coefficient of thermal expansion from the light-transmitting material becomes large, and the electrical connection is made in a high-temperature environment or when the temperature changes rapidly. The state is apt to deteriorate. However, in the solid-state optical device of the present invention, in addition to the effects described in claim 1 or 2, the electrical connection between the solid-state light receiving / emitting chip and the lead made of the metal member is entirely covered with the light transmitting elastic material. Therefore, even in a high temperature environment such as surface mounting or a sudden temperature change, the thermal stress due to the difference in the coefficient of thermal expansion between the metal lead and the light transmitting material is relaxed, and the electrical connection part No pulling force is applied. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product is obtained.

According to a fourth aspect of the present invention, in the solid-state optical device according to the third aspect, a portion of the lead on which the solid-state light receiving / emitting chip is mounted is a concave reflecting mirror. The surface is covered with the light-transmitting elastic material.

In a solid-state optical device having such a reflecting mirror, not only the electrical connection portion but also the reflecting surface of the reflecting mirror receives thermal stress in a high-temperature environment or when there is a rapid temperature change, so that the reflecting surface becomes fogged. As a result, the linear reflectance decreases, and the radiation efficiency or the incident efficiency decreases. Therefore, by covering the reflecting surface of the reflecting mirror with the light transmitting elastic material as well as the electrical connection portion, in addition to the effect according to the third aspect, the thermal stress is reduced and the reflecting surface is prevented from fogging. can do. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

In this way, a solid-state optical device can be provided which can not only reduce the defective rate due to poor electrical contact but also improve the radiation efficiency or the incident efficiency.

According to a fifth aspect of the present invention, in the solid-state optical device according to the second aspect, the electrical connection means is a wire made of a metal member.

In the solid-state optical device having such a configuration, a tensile force is applied to the metal wire due to thermal stress in a high-temperature environment or when a rapid temperature change occurs, so that the solid-state light receiving / emitting chip is connected to the wire and the electrical means is connected to the wire. The part is easy to remove. However, in the solid-state optical device of the present invention,
In addition to the effect according to claim 2, since all the electrical connection portions including wires between the solid-state light receiving / emitting chip and the electrical means are covered with the light-transmitting elastic material, it can be used in a high-temperature environment or a rapid temperature change. Even in such a case, the thermal stress is relieved and the wire is not subjected to a tensile force. Therefore,
Prevents the deterioration of the electrical connection state in high-temperature environments or sudden changes in temperature, thereby reducing the failure rate due to poor electrical contact. There is no danger of failure, and it can withstand practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product can be obtained.

According to a sixth aspect of the present invention, in the solid-state optical device according to the fifth aspect, a recess is formed in the electric means, and an electrical connection between the wire and the electric means is made in the recess. Is what it is.

Accordingly, in addition to the effect of the fifth aspect, the light transmitting elastic material is accumulated in the concave portion, and the connection portion (second bond) between the wire and the electric means has a sufficient amount of the light transmitting elastic material. Covered with. In this way, the second bond, which is the weakest and is likely to break due to thermal stress, can be sufficiently covered with the light-transmitting elastic material, so that the thermal stress is further reduced even in a high-temperature environment or when a rapid temperature change occurs. No pulling force is applied to the wire. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, to further reduce a failure rate due to poor electrical contact, and to enlarge an optical surface made of a light-transmitting material. Also, there is no possibility that electrical contact failure occurs, and the device can be sufficiently put into practical use.

In this way, a solid-state optical device having a temperature-resistant characteristic capable of further reducing the defect rate and increasing the size of the product can be obtained.

A solid-state optical device according to a seventh aspect of the present invention is a solid-state light-receiving and light-emitting chip, and one of a pair of leads for receiving and supplying power to the solid-state light-emitting and light-emitting chip on which the solid-state light-emitting and light-emitting chip is mounted. A lead, the other one of the pair of leads, a wire for electrically connecting the other lead to the solid-state light receiving and emitting chip, and a wire connecting the solid-state light receiving and emitting chip, the wire, and the pair of leads. A light-transmissive material that seals a part of the solid-state light-emitting chip, wherein an optical surface is formed by the light-transmissive material, and the solid-state light receiving and emitting chip is provided inside the light-transmissive material. And the wire and a part of the pair of leads are covered with a light-transmitting elastic material.

According to the solid-state optical device having such a configuration, all the electrical connection portions between the solid-state light receiving / emitting chip and the leads are covered with the light-transmitting elastic material. In addition, the thermal stress due to the difference in the coefficient of thermal expansion between the lead and the sealing material is reduced, and no tensile force is applied to the electrical connection. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or at the time of a rapid temperature change, thereby reducing a failure rate due to poor electrical contact. There is no danger of poor contact, and it can withstand practical use.

In this manner, a solid-state optical device having a temperature-resistant characteristic capable of reducing the defective rate and increasing the size of the product can be obtained.

The solid-state optical device according to the eighth aspect of the present invention is a solid-state optical device, comprising: a solid-state light receiving / emitting chip; electric means for supplying / receiving power to / from the solid-state light receiving / emitting chip; a light-transmitting elastic material; And a reflecting mirror, wherein the reflecting surface of the reflecting mirror is covered with the light transmitting elastic material, and the periphery thereof is further covered with the light transmitting material. .

In a solid-state optical device having such a reflecting mirror, in a high-temperature environment or when the temperature changes rapidly, the reflecting surface of the reflecting mirror is also subjected to thermal stress, and the reflecting surface becomes cloudy, and the linear reflectance decreases. As a result, the radiation efficiency or the incident efficiency decreases. Therefore, by covering the reflecting surface of the reflecting mirror with a light-transmitting elastic material, it is possible to prevent thermal stress from being reduced and to prevent the reflecting surface from fogging. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

In this way, a solid-state optical device capable of improving the radiation efficiency or the incident efficiency by reducing the defective rate due to the fogging of the reflecting mirror is obtained.

A solid-state optical device according to a ninth aspect of the present invention is the solid-state optical device according to the eighth aspect, wherein the reflecting mirror is formed of a metal.

In addition to the effect described in claim 8, a reflecting mirror formed of such a metal has an advantage that it can be easily manufactured. On the other hand, the difference in the coefficient of thermal expansion between the light-transmitting material and the light-transmitting material becomes large, and the reflection surface of the reflecting mirror tends to fog in a high-temperature environment or when the temperature changes rapidly. Therefore, by covering the reflecting surface of the reflecting mirror with a light-transmitting elastic material, it is possible to prevent thermal stress from being reduced and to prevent the reflecting surface from fogging. Particularly, in the case of the reflecting mirror made of the metal of the present invention, there is a great effect.

In this way, a solid-state optical device can be obtained in which the defect rate due to the fogging of the reflecting mirror can be reduced and the radiation efficiency or the incident efficiency can be improved.

The solid-state optical device according to the tenth aspect of the present invention comprises:
In any one of claims 1 to 9,
The optical surface has a convex lens shape.

As described above, in the solid-state optical device according to the present invention, since all the electrical connection portions are covered with the light-transmitting elastic material inside the light-transmitting material, the thermal stress is reduced and the size of the product becomes large. Has become possible. Accordingly, the size of the optical surface is also increased.
In addition to the effect described in any one of the above, the convex lens portion is also enlarged by forming the optical surface into a convex lens shape,
A solid-state optical device having a sufficient optical focusing effect is obtained.

In this way, a solid-state optical device can be obtained which can not only reduce the defect rate but also obtain a sufficient light-collecting effect.

The solid-state optical device according to claim 11 is
In any one of the first to tenth aspects, the width of the optical surface exceeds 3 mm.

In a conventional solid-state optical device directly sealed with a light-transmitting material, if the width of the optical surface exceeds 3 mm, the solid-state light-emitting / receiving chip due to thermal stress in a high-temperature environment or when a rapid temperature change occurs. As a result, the electrical connection state with the physical means deteriorated and practical use was not possible. However, in the solid-state optical device according to the present invention, in addition to the effects described in any one of the first to tenth aspects, in addition to the effect according to any one of the first to tenth, all the electrical connection portions inside the light-transmitting material are light-transmitting elastic. Since it is covered with the material, even in a high-temperature environment or a sudden temperature change, the thermal stress due to the light-transmitting material is reduced, and no tensile force is applied to the electrical connection portion. Therefore, it is possible to prevent a decrease in the electrical connection state in a high-temperature environment or when the temperature is rapidly changed, and to reduce a defective rate due to poor electrical contact.

As a result, a large-sized solid-state optical element having an optical surface width exceeding 3 mm, that is, a light-emitting diode, a light-receiving element, a light-receiving / emitting element, etc. can be sufficiently put into practical use. In particular, in the case of a reflective light emitting diode, if the diameter is small, more light is blocked by a light emitting chip or a lead, but a large reflective light emitting diode exceeding 3 mm can achieve excellent radiation characteristics.

The solid-state optical device according to the twelfth aspect of the present invention
The structure according to any one of claims 1 to 11, further comprising a reflecting mirror provided to face a light receiving / emitting surface of the solid state light receiving / emitting chip.

In a solid-state optical device having such a reflecting mirror, not only the electrical connection portion but also the reflecting surface of the reflecting mirror receives thermal stress in a high-temperature environment or when the temperature changes rapidly, and the material of the reflecting mirror is In some cases, the reflection surface is fogged, the linear reflectance is reduced, and the radiation efficiency or the incident efficiency is reduced. Therefore, by covering the reflecting surface of the reflecting mirror with the light transmitting elastic material as well as the electrical connection part,
In addition to the effect described in any one of the first to eleventh aspects, it is possible to prevent the reflection surface from being fogged due to relaxation of thermal stress. In particular, there is a great effect in the case of a reflecting mirror formed by plating or a large reflecting mirror.

Incidentally, in the case of a reflecting mirror or the like obtained by pressing an aluminum plate, no fogging occurs on the reflecting surface even in a high-temperature environment or a sudden temperature change. Therefore, only the electrical connection portion is made of a light-transmitting elastic material. Just cover it. In addition, the relaxation of thermal stress has made it possible to increase the size of the product. In particular, in a so-called reflective solid-state optical device such as the present invention, if the diameter of the reflecting mirror is small, the solid-state light receiving / emitting chip or lead While large amounts of light are blocked by the light, a large reflective solid-state optical device can realize excellent radiation characteristics or incident characteristics.

In this way, a solid-state optical device can be provided which can not only reduce the defective rate due to poor electrical contact but also improve the radiation efficiency or the incident efficiency.

The solid-state optical device according to the thirteenth aspect of the present invention comprises:
In the structure according to any one of claims 1 to 12, the light-transmitting material is a transparent epoxy resin.

Under a high temperature condition of a glass transition point or higher such as 200 ° C. or higher in a reflow furnace at the time of surface mounting, the transparent epoxy resin is at least 10 times as large as copper or iron which is usually used as a lead material. The coefficient of thermal expansion was large, and therefore the thermal stress exerted on the electrical connection part was also large, and the defect occurrence rate during surface mounting was high. However, the transparent epoxy resin is excellent in fluidity before filling, filling property, transparency after curing, weather resistance, strength, and the like, and is suitable as a sealing resin.
Therefore, in addition to the effects described in any one of claims 1 to 12, the electric connection portion or the reflecting surface of the reflecting mirror is formed of a light-transmitting elastic material inside the transparent epoxy resin as in the present invention. In this case, thermal stress can be reduced, and a practical solid-state optical device can be manufactured using a transparent epoxy resin having excellent properties as a sealing resin.

The solid-state optical device according to claim 14 is:
In any one of the first to thirteenth aspects, the light-transmitting elastic material is a transparent silicone resin.

In addition to the effects described in any one of the first to thirteenth aspects, the transparent silicone resin is a material that is soft and has excellent elasticity and is suitable for reducing thermal stress.
Moreover, since it can be coated as well as hardened as a lump to cover the electrical connection and the like, it is suitable for covering the reflective surface of the reflector,
Further, the manufacturing time can be reduced.

As described above, by using the transparent silicon resin as the light transmitting elastic material, the electrical connection portion and the reflecting surface of the reflecting mirror can be covered in a short period of time, so that practical solid-state light can be easily applied. Elements, that is, light emitting diodes, light receiving elements, light receiving and emitting elements, and the like can be manufactured.

The solid-state optical device according to the invention of claim 15 is
In any one of the first to fourteenth aspects, the component is a surface-mounted component.

In addition to the effects described in any one of the first to fourteenth aspects, in surface mounting, the surface-mounted component is passed through a reflow furnace at 200 ° C. or higher, so that the light-transmitting material can be used in a high-temperature environment. The difference in the coefficient of thermal expansion between the solid state light receiving / emitting chip and the electric means and / or the reflecting surface of the reflecting mirror is subjected to a large thermal stress. However, in the solid-state optical device of the present invention, the electrical connection between the solid-state light receiving / emitting chip and the electrical means and / or the reflecting surface of the reflecting mirror are covered with the light-transmitting elastic material. Even under a high-temperature environment, thermal stress due to the light-transmitting material is reduced. Therefore,
It is possible to prevent a decrease in the electrical connection state or fogging of the reflection surface of the reflector in a high-temperature environment, and to reduce a failure rate due to poor electrical contact or a decrease in linear reflectance. In addition, even if the optical surface made of a light-transmitting material is enlarged, there is no possibility that electrical contact failure occurs, and the optical surface can sufficiently be put to practical use.

In this way, a solid-state optical device having a temperature-resistant property capable of reducing the defective rate and increasing the size of the product can be obtained.

[Brief description of the drawings]

FIG. 1 is a vertical cross-sectional view illustrating an entire configuration of a light emitting diode according to a first embodiment of the present invention.

FIG. 2A is a plan view showing a configuration of a tip portion of another lead of a light emitting diode according to a modification of the first embodiment of the present invention, and FIG. 2B is a longitudinal sectional view thereof.

FIG. 3 is a partially enlarged view showing a light emitting diode according to another modification of the first embodiment of the present invention.

FIG. 4 is a partially enlarged view showing a light emitting diode according to another modification of the first embodiment of the present invention.

FIG. 5A is a plan view showing an overall configuration of a light emitting and receiving element according to a third embodiment of the present invention, FIG.
(C) is a left side view.

FIG. 6 is a longitudinal sectional view showing the entire configuration of a light emitting diode according to a fourth embodiment of the present invention.

FIG. 7 is a longitudinal sectional view showing the entire configuration of a light emitting diode according to a fifth embodiment of the present invention.

FIG. 8 is a longitudinal sectional view showing the entire configuration of a light emitting diode according to a sixth embodiment of the present invention.

FIG. 9 is a longitudinal sectional view showing the entire configuration of a light emitting diode according to a seventh embodiment of the present invention.

FIG. 10 is a longitudinal sectional view showing the entire configuration of a light emitting diode according to an eighth embodiment of the present invention.

FIG. 11 is a longitudinal sectional view showing the entire configuration of a conventional light emitting diode.

[Explanation of symbols]

1, 11, 21, 31, 41, 51, 71 Solid-state optical element 2, 12, 22, 32, 42, 52, 62, 72 Solid-state light receiving / emitting chip 3a, 13a, 23a, 33a, 43a, 53a, 63
a, 73a Electrical means (one lead) 3b, 13b, 23b, 33b, 43b, 53b, 63
b, 73b Electrical means (the other lead) 4, 4a, 4b, 14, 24, 34, 44, 54, 6
4,74 wire 5,15,25,35,45,55,65 Light transmitting material (transparent epoxy resin) 6,16,26,36,46,56,66,76 Optical surface 7,17,27,37 , 47, 57, 67, 77 Light transmitting elastic material (transparent silicon resin) 33c, 43c, 58 Reflecting mirror

Claims (15)

[Claims] 1. A solid-state light receiving / emitting chip, an electric means for supplying and receiving power to and from the solid-state light receiving / emitting chip, a light transmitting elastic material, and a light transmitting material forming an optical surface, A solid-state receiving / emitting chip and / or an electrical connection part of the electric means is covered with the light-transmitting elastic material, and a periphery thereof is further covered with the light-transmitting material; Optical element. 2. A solid state light receiving / emitting chip, an electric means for receiving and supplying power to the solid state light emitting / receiving chip, and an electric connecting means for electrically connecting the solid state light receiving / emitting chip to the electric means. And a light-transmitting elastic material, and a light-transmitting material that forms an optical surface, and at least one of the solid-state light receiving / emitting chip and the electrical connection unit or the electrical connection unit and the electrical unit A solid-state optical device, wherein one of the electrical connection portions is covered with the light-transmitting elastic material, and the periphery thereof is further covered with the light-transmitting material. 3. The solid-state optical device according to claim 1, wherein said electric means is a lead made of a metal member. 4. A part of the lead on which the solid-state light receiving / emitting chip is mounted is a concave reflecting mirror, and a reflecting surface of the reflecting mirror is covered with the light transmitting elastic material. The solid-state optical device according to claim 3. 5. The solid-state optical device according to claim 2, wherein said electric connection means is a wire made of a metal member. 6. The solid-state optical device according to claim 5, wherein a concave portion is formed in said electric means, and an electrical connection between said wire and said electric means is made in said concave portion. 7. A solid-state receiving / emitting chip, one of a pair of leads for receiving and supplying power to and from the solid-state receiving / emitting chip, one of the leads for mounting the solid-state receiving / emitting chip,
The other lead of the pair of leads, a wire for electrically connecting the other lead and the solid state light emitting and receiving chip,
A solid-state optical device comprising: the solid-state light receiving / emitting chip, the wire, and a light-transmitting material that seals a part of the pair of leads, wherein an optical surface is formed by the light-transmitting material. The solid-state optical device, wherein the solid-state light receiving / emitting chip, the wire, and a part of the pair of leads are covered with a light-transmitting elastic material inside the light-transmitting material. 8. A solid-state light receiving and emitting chip, an electric means for supplying and receiving electric power to and from the solid-state light receiving and emitting chip, a light transmitting elastic material, a light transmitting material forming an optical surface, and a reflecting mirror. And a reflection surface of the reflection mirror is covered with the light transmitting elastic material, and a periphery thereof is further covered with the light transmitting material. 9. The solid-state optical device according to claim 8, wherein said reflecting mirror is made of metal. 10. The solid-state optical device according to claim 1, wherein the optical surface has a convex lens shape. 11. The solid-state optical device according to claim 1, wherein the width of the optical surface exceeds 3 mm. 12. The solid-state optical device according to claim 1, further comprising a reflecting mirror provided to face a light-receiving / emitting surface of the solid-state light-receiving / emitting chip. 13. The solid-state optical device according to claim 1, wherein the light transmitting material is a transparent epoxy resin. 14. The solid-state optical device according to claim 1, wherein the light-transmitting elastic material is a transparent silicon resin. 15. The solid-state optical device according to claim 1, wherein the device is a surface-mounted component.