KR20100083907A - Led package and method for manufacturing the same - Google Patents

Led package and method for manufacturing the same Download PDF

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Publication number
KR20100083907A
KR20100083907A KR1020090003237A KR20090003237A KR20100083907A KR 20100083907 A KR20100083907 A KR 20100083907A KR 1020090003237 A KR1020090003237 A KR 1020090003237A KR 20090003237 A KR20090003237 A KR 20090003237A KR 20100083907 A KR20100083907 A KR 20100083907A
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KR
South Korea
Prior art keywords
anode
cathode
led package
reflective surface
led
Prior art date
Application number
KR1020090003237A
Other languages
Korean (ko)
Inventor
설명순
성기주
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설명순
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Priority to KR1020090003237A priority Critical patent/KR20100083907A/en
Publication of KR20100083907A publication Critical patent/KR20100083907A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting diode(LED) package and a method for manufacturing the same are provided to improve thermal conductivity and thermal radiation capacity by forming asymmetrically two metals which forms the LED package. CONSTITUTION: A reflective surface(130) and a lead frame(110) are respectively integrated into a cathode(111) and an anode(112). One end of the cathode and one end of the anode are expanded from the lead frame. The other ends of the cathode and the anode are opposite to each other. A reflective surface is formed by deforming at least part of the cathode and the anode. The reflective surface has an angle more than 90 degrees with respect to the cathode or the anode.

Description

LED package and manufacturing method thereof {LED PACKAGE AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to an LED package and a method of manufacturing the same. More specifically, the LED chip is directly connected to the reflecting surface to show high thermal conductivity, high adhesion to the LED chip, and high reflectivity as part of the cathode and anode are used as reflecting surfaces. The present invention relates to an LED package and a method of manufacturing the same, which eliminates the need for a separate component.

A light-emitting diode (LED) is a kind of p-n junction diode of a semiconductor, which refers to a light emitting diode that emits an electric signal by transmitting an electrical signal to a semiconductor terminal, which is a compound, and converting it into light.

For these LEDs, the package for modularization is an important factor.These packaged LEDs are applied to almost all industries such as home appliances, automobiles, architecture, medical devices, displays, and the environment. The trend is.

In particular, LED-based lighting is emerging because the performance index of high-brightness white LEDs is 100 l m / W, which is well above the level of incandescent lamps and halogen lamps, and is higher than that of general fluorescent lamps. In addition, in terms of power consumption, life, durability, robustness, integration, etc. are showing advantages in various forms.

The packaging process is very important for obtaining these excellent LEDs.

1 is a view showing the basic structure of a typical high power LED module. The LED module contains an LED package.

As shown in FIG. 1, a typical LED module may include an LED chip 10, a lead frame 20, a heat sink 30, a phosphor 40, a lens 50, and the like. have.

The LED chip 10 is a component that converts an electrical signal into an optical signal including an LED element, and the lead frame 20 performs a function of transmitting an electrical signal to the LED chip 10. As a material of such a frame 20, an inexpensive polymer material is widely used.

Meanwhile, the heat sink 30 absorbs heat emitted when the LED module operates, and the phosphor 40 converts light emitted from the LED chip 10 into light having a desired color and temperature. It performs the function. In addition, the lens 50 is a component for controlling the reflection characteristics in a desired form.

In such a conventional LED module, it is common that the reflective surface A on which the light emitted from the LED chip 10 reflects is made of plastic or the like. In this case, since the reflection is made in the plastic part where the reflectance is low, the reflectance had to be reduced.

In addition, in the lead frame having a two-stage structure formed by separating the cathode and the anode, a molding material serving as an insulator is present in the center, and the LED chip has no choice but to be mounted on the molding material. Accordingly, there was a problem that the heat dissipation capacity is falling.

On the other hand, in the structure using the same material as the heat sink 30, there was a problem that the reliability is degraded due to the interface residual stress in the adhesive surface between the heat sink 30 and other components or the LED chip 10 and other components. .

Therefore, there is an urgent need to develop a package method for an LED module having a high heat dissipation capability and reliability while being able to be configured with a simple structure that minimizes an interface.

The present invention has been made to solve the above-mentioned problems of the prior art.

Another object of the present invention is to configure an LED package consisting of two simple metals, the asymmetrical formation of the two metals to the LED chip is mounted on the metal to provide an LED module having a high heat dissipation capacity and thermal conductivity To get it.

Another object of the present invention is to use the metal material itself constituting the LED package as a reflective surface to show a high reflection efficiency and does not require a separate component for the reflective surface to reduce the manufacturing cost, reduce the weight of the finished product To make it possible.

Another object of the present invention is to minimize the space occupied by the plastic molding for insulation in the LED package, so that the LED chip can be mounted on a large portion of the metal material and thus have excellent heat dissipation ability.

It is still another object of the present invention to facilitate the formation of the reflective surface by half-etching the portion where the cathode, the anode and the reflective surface contact each other in the LED package, and the heat dissipation capability of the finished product is improved by maximizing the contact area between the LED chip, the cathode and the anode. To improve.

It is still another object of the present invention to maximize the contact force between the LED chip and other components by half-etching the portion where the LED chip is mounted in the LED package so that the durability and reliability of the finished product can be improved.

In order to achieve the above object, according to an embodiment of the present invention, there is provided an LED package including a cathode, an anode, a reflecting surface and a lead frame which are continuously formed integrally with each of the cathode and the anode.

And, in order to achieve the above object, according to another embodiment of the present invention, a lead frame; A cathode and an anode, each end extending from the lead frame and the other end facing each other at a predetermined distance from each other; And a reflective surface formed by deforming at least a portion of the cathode and the anode.

The cathode and the anode are formed asymmetrically so that any one of the cathode and the anode can be formed wider.

The reflective surface may have an inclination of 90 degrees or more with respect to the cathode or the anode.

A portion of the cathode, the anode and the reflective surface contacting each other may be in an etched state.

A portion of the cathode and the LED chip of the anode may be etched.

It may further include an insulator between the cathode and the anode.

Material of the lead frame, the cathode and the anode and the reflective surface may include a metal or a metal alloy.

And, in order to achieve the above object, according to another embodiment of the present invention, (a) processing the lead frame, each end of which extends from the lead frame and the other end facing each other at a predetermined distance apart Processing to form a cathode and an anode together; And (b) pressing at least a portion of the front surface of the cathode and the anode to form a reflective surface.

In the step (a), by forming the cathode and the anode asymmetrically, any one of the cathode and the anode can be formed more widely.

In the step (b), the reflective surface may have an inclination of 90 degrees or more with respect to the cathode or the anode.

After the step (a) may further comprise the step of etching the cathode and the anode and the reflective surface in contact with each other.

After the step (a) may further comprise the step of etching the portion on which the LED chip of the cathode and the anode is seated.

After the step (b) may further comprise forming an insulator between the cathode and the anode.

The insulator may be formed using an injection molding method.

According to the present invention, the LED package can be composed of two simple metals, and even if the two metals are formed asymmetrically, the LED chip can be mounted directly on the metal (reflective surface). LED modules with high heat dissipation capability and thermal conductivity can be obtained.

In addition, according to the present invention, since the metal constituting the LED package also functions as a reflecting surface, high reflecting efficiency can be obtained, and a separate component for the reflecting surface is not required, thereby reducing manufacturing cost and finished product. To reduce weight.

In addition, according to the present invention, the space occupied by the plastic molding for insulation in the LED package is minimized, so that the LED chip can be mounted in a large portion on the metal, and thus excellent heat dissipation ability can be achieved. .

In addition, according to the present invention, the thickness of the portion of the LED package in contact with the cathode and the anode and the reflective surface can be reduced by half etching, thereby facilitating the deformation of the cathode and the anode for forming the reflective surface and the reflective surface. After formation, the cathode and anode warpage does not appear, thereby maximizing the contact area between the LED chip and the cathode and the anode, thereby improving heat dissipation capability of the finished product.

In addition, according to the present invention, the portion in which the LED chip is mounted in the LED package may have an appropriate roughness by half etching, thereby maximizing the contact force between the LED chip and other components.

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. Like reference numerals in the drawings refer to the same or similar functions throughout the several aspects.

DETAILED DESCRIPTION Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

[Preferred Embodiments of the Invention]

Overall configuration of the LED package

2 is a perspective view showing the overall configuration of the LED package according to an embodiment of the present invention.

3 is an exploded perspective view of the LED package shown in FIG. 2.

4 is a front perspective view of a structure including one or more LED package according to an embodiment of the present invention.

5 and 6 show a rear perspective view of FIG. 4.

As shown in FIG. 2 to FIG. 6, an LED package according to an embodiment of the present invention includes a lead frame 110 and a cathode 111 including a cathode 111 and an anode 112. ) And a plastic injection molding (120) that functions as an insulator between the anode 112 and the reflecting surface 130 that reflects light emitted from the LED chip.

The lead frame 110 supplies and supports electricity to the LED chip mounted in the LED package. The lead frame 110 is processed into a form including a cathode 111 and an anode 112, so that the shape of the cathode 111 and the anode 112 is dependent on the shape of the lead frame 110.

Both cathode 111 and anode 112 extend from lead frame 110. That is, one end of the cathode 111 and the anode 112 is connected to the lead frame 110, the other end of the cathode 111 and the anode 112 is spaced apart from each other.

The cathode 111 and the anode 112 may be opposed to each other, but are preferably formed not to be symmetrical. That is, it is preferable that the area of any one of the cathode 111 and the anode 112 is formed to be wider. The drawing shows that the cathode 111 occupies a larger area, the anode 112 otherwise, but vice versa.

Meanwhile, in the cathode 111 and the anode 112, the portion where the cathode 111 and the anode 112 are deformed to form a later reflective surface 130, that is, the cathode 111 and the anode 112, and The portion where the reflective surface 130 is in contact may be in a state where half etching is performed. Here, half etching means removing about half of the thickness with respect to the etching target object. That is, the thickness of the portion where the cathode 111, the anode 112, and the reflective surface 130 contact with each other by half etching is smaller than the thickness of the lead frame 110.

Such half etching may reduce the thickness of the portion where the cathode 111 and the anode 112 and the reflective surface 130 contact each other, and thus the cathode 111 and the anode 112 for forming the reflective surface 130 may be reduced. Since the deformation of the cathode 111 and the anode 112 does not occur after the formation of the reflective surface 130, the heat dissipation ability of the finished product is improved by maximizing the contact area of the LED chip with the cathode and the anode.

In addition, in the cathode 111 and the anode 112, the surface on which the LED chip is mounted later, that is, the front surface of the lead frame 110 may be in a state in which half etching is performed. That is, a space in which the LED chip is mounted is formed on the cathode 111 and the anode 112 by half etching to corrode half of the thickness of the lead frame 110. At this time, it is desirable to make the area which is corroded by half etching slightly larger than the size of the LED chip to be mounted.

This half etching allows the LED chip to be seated on the cathode 111 and the anode 112, and at the same time, it has an appropriate roughness in the portion where the LED chip is mounted, thereby enhancing the adhesion when the LED chip is mounted and consequently the LED Improves package durability and reliability

In addition, the reflective surface 130 of the LED package according to the embodiment of the present invention is formed in a form in which a part of the cathode 111 and the anode 112 is deformed. As will be described later, as the cathode 111 and the anode 112 are pressed, a recess is formed in which the outer portion is an inclined surface at a predetermined angle, and the outer portion of the recess, that is, the inclined surface is the reflective surface 130. Will function as). As shown in the figure, the concave portion may be a circular shape centered on the center of the LED package, but is not limited thereto. In addition, the inclination of the reflective surface 130 may be variously changed according to the reflection efficiency required in the LED package. As an example, the reflective surface 130 may have an inclination of 90 degrees or more with respect to the cathode 111 or the anode 112.

As such, a part of the cathode 111 and the anode 112 functions as the reflective surface 130, so that a separate component for the reflective surface 130 is not required, and the material of the reflective surface 130 is made of metal. As the material is made of a material, the reflection efficiency of the LED package is improved, and as the LED chips mounted on the cathode 111 and the anode 112 are directly connected to the reflection surface, the efficiency of heat radiation (heat transfer) of the LED package is improved. do.

Manufacturing method of LED package

Hereinafter, a manufacturing process of the LED package according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 6.

First, the shape of the lead frame 110 is processed into a predetermined desired shape. The lead frame 110 may include any conductor, that is, a metal or a metal alloy, but the material of the lead frame 110 is preferably copper.

In the process, the cathode 111 and the anode 112 are also formed. As described above, the cathode 111 and the anode 112 may extend from the lead frame 110 to face each other, but may be formed in a shape in which one end is spaced apart from each other.

In this case, the cathode 111 and the anode 112 may be processed in an asymmetrical form, that is, the one of the cathode 111 and the anode 112 may be processed to have a larger area. As a result, since the cathode 111 and the anode 112 are formed in an asymmetrical shape, the area of the plastic injection molding 120 exposed between the cathode 111 and the anode 112 is reduced, that is, the cathode 111 in contact with the LED chip. ) And the area of the anode 112 may be increased to improve the heat dissipation effect of the LED package.

Next, half etching is performed to corrode about half of the thickness of the lead frame 110. Half etching is performed on the portion where the cathode 111 and the anode 112 and the reflecting surface 130 contact each other and / or the portion where the LED chip is mounted on the cathode 111 and the anode 112. Through this half etching, the bending of the cathode 111 and the anode 112 does not appear after the reflective surface 130 is formed. In addition, a space in which the LED chip is mounted may be secured in the LED package to be completed later, and at the same time, the roughness of the lead frame 110, more precisely, the cathode 111 and the anode 112, on which the LED chip is seated, may increase. Done. Half etching may be performed using conventional photolithography and wet etching methods using a mask, but is not necessarily limited thereto.

The contact area between the LED chip and the cathode 111 and the anode 112 increases according to the prevention of the warpage of the cathode 111 and the anode 112, that is, the flatness of the cathode 111 and the anode 112. The heat dissipation capability of the LED package can be further improved. Specifically, when the thickness of the portion where the cathode 111 and the anode 112 and the reflective surface 130 come into contact with each other by half etching (that is, become thinner than the thickness of the lead frame 110), the future reflective surface 130 Undesired deformation on the cathode 111 and anode 112 (e.g., bending or local bending, etc.) that can occur during the pressing operation for forming can be reduced so that the cathode 111 and anode 112 are flatter. As a result, the contact area between the LED chip and the cathode 111 and the anode 112 is increased, thereby improving heat dissipation capability of the LED package.

In addition, as the roughness increases, the adhesion of the LED chip on the cathode 111 and the anode 112 may be further improved. In detail, a cavity having a predetermined depth (about 300 μm) is formed in a portion where the LED chip is to be mounted by half etching, and the roughness increases according to the etching, thereby enabling stable mounting of the LED chip. The adhesion of the seated LED chip is improved to further improve the durability and reliability of the LED package.

Next, the reflective surface 130 is formed by pressing. 2 to 4, the front end of the cathode 111 and the anode 112, one end of which is connected to the lead frame 110 and the other end is spaced from each other, that is, the periphery of the portion where the LED chip is mounted later. Pressing is carried out so that the recess can be formed. In other words, the reflective surface 130 having a predetermined inclination angle is formed around the point where the LED chip is to be mounted.

A feature of the reflective surface 130 in the LED package of the present invention is that at least a portion of the cathode 111 and the anode 112 function as the reflective surface 130. Specifically, in the present invention, the reflective surface 130 is not formed as a separate component from the cathode 111 and the anode 112, but at least a part of the cathode 111 and the anode 112 through a pressing process. Is deformed to form the reflective surface 130. In other words, the LED package of the present invention is characterized in that the reflective surface 130 is formed in succession while integrally formed with the cathode 111 and the anode 112, respectively.

In the present invention, since the cathode 111 and the anode 112 are made of metal, the reflectivity of the LED package can be relatively improved due to the excellent surface state compared to the reflective surface of the plastic material employed in the conventional LED package. In particular, the reflective surface of the conventional plastic material may be degraded by the ultraviolet rays included in the light source, so that the reliability of the LED package may be degraded, but the reflective surface 130 of the metal material of the present invention may prevent such a phenomenon. Can be.

Meanwhile, since the reflective surface 130 is formed only by pressing the cathode 111 and the anode 112, the LED package does not need to use a separate component such as a metal member to install the reflective surface 130. The weight of the LED package can be reduced and the manufacturing cost of the LED package can be reduced.

Finally, after the reflective surface 130 is formed, the manufacture of the LED package is completed by injecting a plastic injection part 120 serving as an insulator through molding. At this time, the material of the insulator is not limited to plastic, and the injection process of the plastic injection molding is a well-known technique, and thus, detailed description thereof will be omitted.

LED module manufacturing

Hereinafter, a process of manufacturing an LED module using the LED package according to an embodiment of the present invention will be described briefly.

First, the LED chip is mounted on the central portion of the LED package manufactured by the above-described process. As described above, since the cathode 111 and the anode 112 face each other but have an asymmetric shape, if the LED chip is mounted in the center of the LED package, the LED chip is formed on the cathode 111 and the anode 112. It can be mounted on. The method of mounting the LED chip may be a soldering method or a bonding method using a material such as Ag epoxy resin, but is not limited thereto.

After the LED chip is mounted, wire bonding is performed. Wire bonding is the process of connecting two electrodes of a lead frame (or cathode and anode) and an LED chip in an LED package. Such wire bonding is performed for the cathode 111 and the anode 112, respectively, and the cathode 111 and the anode 112 included in the LED package according to the present invention have an asymmetric shape with each other, and thus the cathode 111 ) And the anode 112 does not need a separate display. That is, since the cathode 111 and the anode 112 are not symmetrical at the time of wire bonding, the cathode 111 and the anode 112 are easily distinguished from each other so that a special direction indication for distinguishing the cathode 111 and the anode 112 is not required.

After the wire bonding is completed, the final LED module may be completed by additionally applying a phosphor, attaching a lens, and the like according to the application field of the LED chip.

On the other hand, in the aspect of improving the productivity of the LED module, as shown in Figures 4 to 6 in the present invention, of course, a plurality of LED packages can be manufactured in a batch process.

Although the present invention has been described with reference to specific embodiments such as specific components and the like, but it is provided to help a more general understanding of the present invention, but the present invention is not limited to the above embodiments. For those skilled in the art, various modifications and variations can be made from these descriptions.

Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, I will say.

1 is a view showing the configuration of a conventional LED module.

2 is a perspective view showing the overall configuration of the LED package according to an embodiment of the present invention.

3 is an exploded perspective view of the LED package shown in FIG. 2.

4 is a front perspective view of a structure including one or more LED package according to an embodiment of the present invention.

5 and 6 are rear perspective views of FIG. 4.

<Brief description of the major reference numerals>

110: lead frame

111: cathode

112: anode

120: plastic injection molding

130: reflective surface

Claims (15)

And a cathode, an anode, a reflecting surface and a lead frame which are continuously formed integrally with each of the cathode and the anode. Lead frame; A cathode and an anode, each end extending from the lead frame and the other end facing each other at a predetermined distance from each other; And Reflecting surface formed by deforming at least a portion of the cathode and the anode LED package comprising a. The method of claim 2, The cathode and the anode is formed asymmetrically LED package, characterized in that any one of the cathode and the anode is formed wider. The method of claim 2, The reflective surface has an LED package, characterized in that having an inclination of 90 degrees or more relative to the cathode or the anode. The method of claim 2, And the portion of the cathode and the anode and the reflective surface in contact with each other is in an etched state. The method of claim 2, The LED package, characterized in that the portion in which the cathode and the LED chip of the anode is seated. The method of claim 2, And an insulator between the cathode and the anode. The method of claim 2, LED package, characterized in that the material of the lead frame, the cathode and the anode and the reflective surface comprises a metal or a metal alloy. (a) processing a lead frame, each end of which extends from the lead frame and the other end is formed such that a cathode and an anode facing each other are formed together; And (b) pressing to form at least part of the front surface of the cathode and the anode to form a reflective surface Method of manufacturing an LED package comprising a. 10. The method of claim 9, The method of manufacturing an LED package, characterized in that in the step (a) to form the cathode and the anode asymmetrically so that any one of the cathode and the anode is formed wider. 10. The method of claim 9, In (b) the manufacturing method of the LED package, characterized in that the reflective surface has an inclination of 90 degrees or more relative to the cathode or the anode. 10. The method of claim 9, And etching the portion where the cathode, the anode, and the reflective surface contact each other after the step (a). 10. The method of claim 9, After the step (a) further comprising the step of etching the cathode and the LED chip of the anode is seated manufacturing method of the LED package. 10. The method of claim 9, And after the step (b), forming an insulator between the cathode and the anode. The method of claim 14, The insulator is a manufacturing method of the LED package, characterized in that formed using an injection molding method.
KR1020090003237A 2009-01-15 2009-01-15 Led package and method for manufacturing the same KR20100083907A (en)

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Cited By (6)

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EP2418702A3 (en) * 2010-08-09 2012-07-25 LG Innotek Co., Ltd. Light emitting device and lighting system having the same
EP2947705A1 (en) * 2014-05-23 2015-11-25 Everlight Electronics Co., Ltd Carrier, carrier leadframe, and light emitting device
CN107346799A (en) * 2016-05-05 2017-11-14 亿光电子工业股份有限公司 Enclosure support structure and its manufacture method
TWI611139B (en) * 2014-05-23 2018-01-11 億光電子工業股份有限公司 Light emitting device
EP2418701B1 (en) * 2010-08-09 2018-03-07 LG Innotek Co., Ltd. Light emitting device
US10177292B2 (en) 2014-05-23 2019-01-08 Everlight Electronics Co., Ltd. Carrier, carrier leadframe, and light emitting device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2418702A3 (en) * 2010-08-09 2012-07-25 LG Innotek Co., Ltd. Light emitting device and lighting system having the same
US8399904B2 (en) 2010-08-09 2013-03-19 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same
EP2418701B1 (en) * 2010-08-09 2018-03-07 LG Innotek Co., Ltd. Light emitting device
US9905742B2 (en) 2014-05-23 2018-02-27 Everlight Electronics Co., Ltd. Carrier, carrier leadframe, and light emitting device
US9640733B2 (en) 2014-05-23 2017-05-02 Everlight Electronics Co., Ltd. Carrier, carrier leadframe, and light emitting device
US9691960B1 (en) 2014-05-23 2017-06-27 Everlight Electronics Co., Ltd. Carrier, carrier leadframe, and light emitting device and method for manufacturing same
TWI611139B (en) * 2014-05-23 2018-01-11 億光電子工業股份有限公司 Light emitting device
TWI553264B (en) * 2014-05-23 2016-10-11 億光電子工業股份有限公司 Carrier leadframe and manufacturung method thereof and light emitting device and manufacturung method from said carrier leadframe
EP2947705A1 (en) * 2014-05-23 2015-11-25 Everlight Electronics Co., Ltd Carrier, carrier leadframe, and light emitting device
CN108807644A (en) * 2014-05-23 2018-11-13 亿光电子(中国)有限公司 Light emitting device
CN108922953A (en) * 2014-05-23 2018-11-30 亿光电子(中国)有限公司 Method for manufacturing light emitting device
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