CN210123753U

CN210123753U - Light-emitting diode packaging structure capable of increasing thermal conductivity of silicon crystal substrate based on lamp

Info

Publication number: CN210123753U
Application number: CN201921541016.8U
Authority: CN
Inventors: 来锋锋; 欧阳勇军; 夏康
Original assignee: Hangzhou Feng Lan Industrial Co Ltd
Current assignee: Hangzhou Feng Lan Industrial Co Ltd
Priority date: 2019-09-17
Filing date: 2019-09-17
Publication date: 2020-03-03
Anticipated expiration: 2029-09-17

Abstract

The utility model discloses an increase silicon wafer substrate thermal conductivity emitting diode packaging structure based on lamps and lanterns, including the LED chip to the bottom of LED chip is provided with the heat dissipation base plate, the top of heat dissipation base plate is provided with the copper circuit to it is provided with anodal solder joint and negative pole solder joint respectively to cover the copper circuit, the bottom of LED chip is provided with P electrode and N electrode respectively, between P electrode and the anodal solder joint, weld through the solder between N electrode and the negative pole solder joint mutually, the utility model relates to an encapsulation structure technical field. This increase silicon wafer substrate thermal conductivity LED packaging structure based on lamps and lanterns is provided with the copper-clad circuit through the top of heat dissipation substrate, has eliminated the lead wire and has hindered, realizes plane coating phosphor powder and ultra-thin encapsulation, and face contact connects can be able to bear the heavy current impact, reduces the redundant process of heat conduction, and the heat conduction interface is the metal, and its coefficient of heat conductivity is higher, and the thermal resistance is littleer, and mechanics, calorifics, optics and electrical property are excellent.

Description

Light-emitting diode packaging structure capable of increasing thermal conductivity of silicon crystal substrate based on lamp

Technical Field

The utility model relates to an packaging structure technical field specifically is an increase silicon wafer substrate heat conductivity LED packaging structure based on lamps and lanterns.

Background

When the LED lamp beads are switched on to emit light, about 30% of electric energy is converted into light energy, and about 70% of electric energy is converted into heat energy, so that instant high temperature can be generated while the LED lamp beads emit light, if the high temperature can not be LED out in time, the LED lamp beads are rapidly aged, the light efficiency is reduced, and the packaging density of the LED chips in the lamp is increased along with the continuous improvement of the requirements on the lamp.

The LED chip mainly adopts a packaging form of normal mounting in the current market, a bare chip of an LED integrated circuit is arranged on a substrate which plays a role of supporting and fixing in a clinging manner, a plurality of metal wires are used for connecting metal contact points on the bare chip of the LED integrated circuit with external pins through welding, then resin is embedded, and the bare chip is sealed by a plastic tube shell to form a chip whole, heat generated by the LED can be transmitted to a system circuit board through an electrode metal wire, generally speaking, the gold wire is used for electrode bonding, the heat dissipation is limited by the slender geometric shape of the metal wire, the heat dissipation and heat conduction process is long, and the efficiency is low.

SUMMERY OF THE UTILITY MODEL

Not enough to prior art, the utility model provides an increase silicon crystal base plate heat conductivity emitting diode packaging structure based on lamps and lanterns has solved among the prior art emitting diode packaging structure radiating efficiency low, the loaded down with trivial details problem of encapsulation processing procedure.

In order to achieve the above purpose, the utility model discloses a following technical scheme realizes: the utility model provides an increase silicon wafer base plate thermal conductivity emitting diode packaging structure based on lamps and lanterns, includes the LED chip to the bottom of LED chip is provided with the heat dissipation base plate, the top of heat dissipation base plate is provided with the copper circuit, and the copper circuit is provided with anodal solder joint and negative pole solder joint respectively, the bottom of LED chip is provided with P electrode and N electrode respectively, weld through the solder between P electrode and the anodal solder joint, between N electrode and the negative pole solder joint mutually, the both sides at heat dissipation base plate top all are provided with the pin to the top of pin is connected with copper circuit, the top of heat dissipation base plate just is located the surface of LED chip and is provided with packaging resin.

Preferably, the top of the LED chip is provided with a phosphor, and the top of the heat dissipation substrate is provided with a light reflection layer.

Preferably, a circuit board is arranged at the bottom of the heat dissipation substrate, and the pins are welded with the circuit board.

Preferably, a heat conducting grease is arranged between the circuit board and the heat dissipation substrate.

Preferably, the heat dissipation substrate is a silicon crystal substrate, and the encapsulation resin is a transparent resin material.

Preferably, the thickness of the encapsulating resin is not more than 1 mm.

Advantageous effects

The utility model provides an increase silicon wafer substrate heat conductivity LED packaging structure based on lamps and lanterns. Compared with the prior art, the method has the following beneficial effects:

(1) the LED packaging structure for increasing the thermal conductivity of the silicon crystal substrate based on the lamp is characterized in that a copper-clad circuit is arranged on the top of a radiating substrate and is respectively provided with a positive electrode welding spot and a negative electrode welding spot, a P electrode and an N electrode are respectively arranged on the bottom of an LED chip, the P electrode and the positive electrode welding spot and the N electrode and the negative electrode welding spot are welded through welding materials, pins are arranged on two sides of the top of the radiating substrate, the top ends of the pins are connected with the copper-clad circuit, packaging resin is arranged on the top of the radiating substrate and positioned on the surface of the LED chip, so that lead wire obstruction is eliminated, plane coating of fluorescent powder and ultrathin packaging can be realized, as the electrical connection is surface contact, high-current impact can be resisted, the redundant process of heat conduction is reduced, and a heat conduction interface is made of metal, the heat conduction coefficient is, the material shows excellent mechanical, thermal, optical and electrical properties.

(2) This increase silicon wafer base plate heat conductivity emitting diode packaging structure based on lamps and lanterns, top through the LED chip is provided with phosphor powder, and the top of heat dissipation base plate is provided with the reflector layer, the bottom of heat dissipation base plate is provided with the circuit board, and the pin welds with the circuit board mutually, be provided with the heat conduction fat between circuit board and the heat dissipation base plate, the heat dissipation base plate is silicon wafer base plate, and packaging resin is transparent resin material, packaging resin's thickness is not more than 1mm, retrench the LED process by a wide margin, let reduction by a wide margin of manufacturing cost, choose flip-chip preparation LED filament for use, its heat dissipation and stability can be better, can solve the filament heat dissipation that positive dress structure probably appears betterly bad, the line collapses.

Drawings

FIG. 1 is a perspective view of the structure of the present invention;

FIG. 2 is a schematic view of the internal structure of the encapsulating resin of the present invention;

fig. 3 is an illustration of the internal structure of the heat dissipation substrate of the present invention.

In the figure: the LED light source comprises a 1-LED chip, a 2-radiating substrate, a 3-copper-clad circuit, a 4-positive electrode welding spot, a 5-negative electrode welding spot, a 6-P electrode, a 7-N electrode, 8-solder, a 9-pin, 10-packaging resin, 11-fluorescent powder, 12-reflecting layer, 13-circuit board and 14-thermal grease.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, the present invention provides a technical solution: a light emitting diode packaging structure based on a lamp and capable of increasing thermal conductivity of a silicon crystal substrate comprises an LED chip 1, a heat dissipation substrate 2 is arranged at the bottom of the LED chip 1, fluorescent powder 11 is arranged at the top of the LED chip 1, a reflection layer 12 is arranged at the top of the heat dissipation substrate 2, the reflection layer 12 reduces light absorption and enhances light emitting brightness, a circuit board 13 is arranged at the bottom of the heat dissipation substrate 2, pins 9 are welded with the circuit board 13, heat conduction grease 14 is arranged between the circuit board 13 and the heat dissipation substrate 2, the heat dissipation substrate 2 is a silicon crystal substrate, a heat conduction path is a gold-tin welding point-silicon crystal heat dissipation substrate 2, a heat conduction redundancy process is reduced, a heat conduction interface is metal, the heat conduction coefficient is higher and smaller, packaging resin 10 is transparent resin material, a copper-clad circuit 3 is arranged at the top of the heat dissipation substrate 2, and the copper-clad circuit 3 is, the bottom of the LED chip is respectively provided with a P electrode 6 and an N electrode 7, the P electrode 6 is welded with the positive electrode welding point 4, the N electrode 7 is welded with the negative electrode welding point 5 through a welding flux 8, the electrical connection is surface contact and can resist large current impact, pins 9 are arranged on two sides of the top of the radiating substrate 2, the top end of each pin 9 is connected with the copper-clad circuit 3, the top of the radiating substrate 2, which is positioned on the surface of the LED chip 1, is provided with packaging resin 10, the thickness of the packaging resin 10 is not more than 1mm, the lead wire obstruction is eliminated, plane coating of fluorescent powder 11 and ultrathin packaging can be realized, and the content which is not described in detail in the specification belongs to the prior art known by technicians in the field.

During the use, with positive electrode 4 and negative pole solder joint 5 on LED chip 1 upper P electrode 6 and N electrode 7 alignment radiating substrate 2, realize the welding through gold tin solder 8, encapsulate transparent resin between LED chip 1 surface and radiating substrate 2, the heat portion that LED chip 1 sent conducts to the air through encapsulation resin 10 in the use, main heat then covers copper circuit 3 and radiating substrate 2 through the welding point transmission, the rethread thermal grease 14 transmits to circuit board 13, at last the row dispels to the air.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides an increase silicon wafer substrate heat conductivity LED packaging structure based on lamps and lanterns, includes LED chip (1) to the bottom of LED chip (1) is provided with heat dissipation substrate (2), its characterized in that: the LED heat dissipation structure is characterized in that a copper-clad circuit (3) is arranged at the top of the heat dissipation substrate (2), a positive electrode welding point (4) and a negative electrode welding point (5) are respectively arranged on the copper-clad circuit (3), a P electrode (6) and an N electrode (7) are respectively arranged at the bottom of the LED chip, the P electrode (6) and the positive electrode welding point (4) and the N electrode (7) and the negative electrode welding point (5) are welded through a welding material (8), pins (9) are arranged on two sides of the top of the heat dissipation substrate (2), the top of the pins (9) is connected with the copper-clad circuit (3), and packaging resin (10) is arranged on the top of the heat dissipation substrate (2) and on the surface of the LED chip (1).

2. The package structure of claim 1, wherein the package structure comprises a silicon substrate and a heat conducting layer, wherein the silicon substrate comprises: the LED lamp is characterized in that fluorescent powder (11) is arranged on the top of the LED chip (1), and a reflecting layer (12) is arranged on the top of the heat dissipation substrate (2).

3. The package structure of claim 1, wherein the package structure comprises a silicon substrate and a heat conducting layer, wherein the silicon substrate comprises: the bottom of the heat dissipation substrate (2) is provided with a circuit board (13), and the pins (9) are welded with the circuit board (13).

4. The structure of claim 3, wherein the silicon wafer substrate is a heat conducting silicon wafer substrate for a light emitting diode package, and the structure comprises: and a heat conduction grease (14) is arranged between the circuit board (13) and the heat dissipation substrate (2).

5. The package structure of claim 1, wherein the package structure comprises a silicon substrate and a heat conducting layer, wherein the silicon substrate comprises: the heat dissipation substrate (2) is a silicon crystal substrate, and the encapsulation resin (10) is a transparent resin material.

6. The package structure of claim 1, wherein the package structure comprises a silicon substrate and a heat conducting layer, wherein the silicon substrate comprises: the thickness of the encapsulating resin (10) is not more than 1 mm.