CN112259664A - Integrated IR light source device and packaging method thereof - Google Patents
Integrated IR light source device and packaging method thereof Download PDFInfo
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- CN112259664A CN112259664A CN202011273160.5A CN202011273160A CN112259664A CN 112259664 A CN112259664 A CN 112259664A CN 202011273160 A CN202011273160 A CN 202011273160A CN 112259664 A CN112259664 A CN 112259664A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses an integrated IR light source device and a packaging method thereof, and the key point of the technical scheme is that the integrated IR light source device comprises a substrate, a metalized circuit layer is arranged at the periphery of the substrate, an optical window cover plate is arranged on the metalized circuit layer, the optical window cover plate comprises a metal piece, a light through hole and an optical window lens covering the light through hole are respectively arranged on the metal piece, the optical window cover plate is arranged above the substrate, so that a cavity is formed between the optical window cover plate and the substrate, a chip set is arranged in the cavity, and the chip set is fixed on the substrate. The substrate, the metal piece and the optical window lens are all made of inorganic materials, the solder, the metallized circuit layer and all the coatings are also made of inorganic materials, the optical window lens and the metal piece are sealed and connected into a whole by adopting a sintering process or a fusion welding process to manufacture the optical window cover plate, and the optical window cover plate and the substrate are combined into a whole by adopting a resistance welding process or a fusion welding process to manufacture the LED device, so that high-airtightness and inorganic packaging are realized.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of light source device packaging, in particular to an integrated IR light source device and a packaging method thereof.
[ background of the invention ]
With the gradual maturity of LED technology, LEDs are widely applied in various industries. In recent years, development of 5G technology drives interconnection of everything and smart home, different meanings of light are given, and the infrared LED plays an important role in security, face recognition, machine vision, intelligent control, food detection and medical treatment. Traditional infrared LED lamp pearl is epoxy or silica gel form encapsulation, the wave band is concentrated in 660 supple of money 940nm near-infrared scope, adopt infrared LED lamp pearl and white light LED lamp pearl to paste respectively and adorn by corresponding circuit control function realization separately on same PCB circuit board in the application that needs illumination or light filling usually, make this type of application product size miniaturization, it is great that the integration receives LED lamp pearl quantity and arranges the influence, consequently, integrate white light and infrared chip integration encapsulation as an organic whole can be fine satisfy application demand, the IR light source device after the integration has better price/performance ratio and reliability compared in single white light and infrared separator simultaneously. Especially, in the application of a high-power IR light source device in outdoor or public places, the physicochemical characteristics and environmental factors of the light source are easy to cause the aging and yellowing of organic materials such as silica gel or epoxy resin, and the device failure or lamp death is caused by the change of the oxygen permeation, moisture permeation and light transmission characteristics.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provide an integrated IR light source device and a packaging method thereof.
The invention is realized by the following technical scheme:
an integrated IR light source device, characterized by: including base plate 2 the periphery of base plate 2 is equipped with metallization circuit layer 4 be equipped with light window apron 1 on metallization circuit layer 4, light window apron 1 is equipped with respectively including metalwork 101 on metalwork 101 and leads to the unthreaded hole, covers the light window lens 102 that leads to the unthreaded hole, light window apron 1 has cavity structures, and light window apron 1 is located the top of base plate 2 makes light window apron 1 with form cavity 6 between the base plate 2 be equipped with chipset 3 in the cavity 6, chipset 3 is fixed on base plate 2, base plate 2 is planar structure.
The integrated IR light source device as described above, characterized in that: the chip set 3 is a combination of a white light chip 301 and an infrared chip 302.
The integrated IR light source device as described above, characterized in that: the chip group 3 is a combination of an ultraviolet chip and an infrared chip or a combination of a white light chip, an infrared chip and an ultraviolet chip.
The integrated IR light source device as described above, characterized in that: and a solder 5 for welding and connecting the optical window lens 102 and the metal piece 101 is arranged between the optical window lens 102 and the metal piece 101, and the solder 5 is made of an inorganic material.
The integrated IR light source device as described above, characterized in that: the substrate 2 is made of one of ceramic, aluminum material, copper material and aluminum silicon carbide substrate.
The integrated IR light source device as described above, characterized in that: the optical window lens 102 is made of quartz glass, and the shape of the optical window lens 102 is one of square, circular, ellipsoid and hemisphere.
The integrated IR light source device as described above, characterized in that: the metal part 101 is made of kovar, copper or aluminum, an extended metal welding edge is arranged on the edge part of the bottom of the metal part 101 and is connected with the metallized circuit layer 4 in a welding mode, the width H1 of the metal welding edge is larger than or equal to 0.3 mm, the thickness H2 of the metallized circuit layer 4 is larger than or equal to 60 microns, a plating layer is arranged on the surface of the metallized circuit layer 4, and the plating layer is made of gold or nickel-gold; the surface of the metal piece 101 is provided with a nickel plating layer, and the depth H3 of the cavity 6 is not less than 0.5 mm.
A method for packaging an integrated IR light source device as described above, comprising:
the chip group 3 is bound on the substrate 2 through a solder paste, silver glue crystal fixing or eutectic process;
an annular metallized circuit layer 4 is arranged at the edge of the substrate 2, the thickness of the circuit layer of the metallized circuit layer 4 is not less than 60um, and the surface of the metallized circuit layer 4 is subjected to gold plating or nickel gold plating treatment;
the metal piece 101 is manufactured through die stamping, and nickel plating is carried out on the surface of the metal piece 101;
cutting a quartz glass sheet matched with the size of the light through hole to manufacture an optical window lens 102, performing plating treatment on an annular area with the edge of the optical window lens 102 being less than or equal to 0.5 mm, wherein the thickness of a plating layer is greater than or equal to 10 micrometers, loading the optical window lens 102 into a metal piece 101 through a tool, and welding the matching contact part of the plating area at the edge of the optical window lens 102 and the metal piece 101 by adopting a welding process to manufacture an optical window cover plate 1, or adding a welding flux 5 to sinter the optical window lens 102 and the metal piece 101 into the optical window cover plate 1;
the optical window cover plate 1 is assembled on the metallized circuit layer 4 of the substrate 2 through a jig, and the optical window cover plate 1 and the substrate 2 are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the integrated IR light source device.
The packaging method of the integrated IR light source device as described above is characterized in that: the resistance welding process is parallel seam welding, and the fusion welding process is laser welding.
The packaging method of the integrated IR light source device as described above is characterized in that: the solder 5 comprises the components of TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%; the plating composition at the edge of the optical window lens 102 is nickel gold or copper.
Compared with the prior art, the invention has the following advantages:
1. the substrate, the metal piece and the optical window lens are all made of inorganic materials, the solder, the metallized circuit layer and all the coatings are also made of inorganic materials, the optical window lens and the metal piece are sealed and connected into a whole by adopting a sintering process or a fusion welding process to manufacture the optical window cover plate, and the optical window cover plate and the substrate are combined into a whole by adopting a resistance welding process or a fusion welding process to manufacture the LED device, so that high-airtightness and inorganic packaging are realized.
2. Compared with the traditional IR light source device, the invention has the advantages that a plurality of chips share one set of optical window cover plate and the base plate, and the chips are integrated by adopting an inorganic packaging technology, so that the volume is greatly reduced, and the reliability and the cost performance are greatly improved.
[ description of the drawings ]
FIG. 1 is a schematic substrate diagram of an integrated IR light source device of the present invention;
FIG. 2 is a schematic cross-sectional view of an overall structure of a first embodiment of the present invention, in which a light window lens is square or circular, a substrate is a planar structure, and the light window lens is connected with a metal member by sintering;
FIG. 3 is a schematic cross-sectional view of an overall structure of a second embodiment of the present invention, in which the optical window lens is shaped like a hemisphere or an ellipsoid, the substrate is a planar structure, and the optical window lens is connected with the metal member by sintering;
FIG. 4 is a schematic sectional view of the overall structure of a third embodiment of the present invention, in which the optical window lens is square or circular, the substrate is a cavity structure, and the optical window lens is welded to the metal member;
FIG. 5 is a schematic sectional view showing the overall structure of a fourth embodiment of the present invention, in which the optical window lens has a hemispherical or ellipsoidal shape, the substrate has a cavity structure, and the optical window lens is connected to the metal member by fusion welding;
in the figure: 1 is a light window cover plate; 101 is a metal piece; 102 is a light window lens; 2 is a substrate; 3 is a chip group; 301 is a white light chip; 302 is an infrared chip; 4 is a metallized circuit layer; 5 is solder; 6 is a cavity; and 7 is a bonding pad.
[ detailed description ] embodiments
The technical features of the present invention will be described in further detail with reference to the accompanying drawings so that those skilled in the art can understand the technical features.
The utility model provides a LED device, includes base plate 2 the periphery of base plate 2 is equipped with metallization circuit layer 4 be equipped with light window apron 1 on the metallization circuit layer 4, light window apron 1 is equipped with logical unthreaded hole, covers respectively including metalwork 101 on metalwork 101 the light window lens 102 of logical unthreaded hole, the size and the base plate 2 size matching of light window apron 1, light window apron 1 has cavity structures, and light window apron 1 is located the top of base plate 2 makes light window apron 1 with form cavity 6 between the base plate 2 be equipped with chipset 3 in the cavity 6, chipset 3 is fixed on the base plate 2.
The chip group 3 in the patent is preferably a combination of a white light chip 301 and an infrared chip 302, as shown in fig. 1; in fig. 1, there are four bonding pads 7, wherein a white light chip 301 is disposed on two bonding pads 7, and an infrared chip 302 is disposed on the third bonding pad 7 and connected to the fourth bonding pad 7 through a metal wire.
The difference between the present patent and the patent of 'an LED device and a packaging method thereof' applied by the applicant on the same day is that the present patent applies an inorganic packaging structure and method to an IR light source device integrated with a plurality of chips, and solves the problems of large volume, small power, poor reliability, short service life and the like of the traditional IR light source device.
Of course, the chipset 3 may also be a combination of an ultraviolet chip and an infrared chip, or a combination of a white light chip, an infrared chip and an ultraviolet chip.
The shape of the light window cover plate 1 is not limited to a square, a circle, etc. The depth H3 of the cavity 6 formed between the optical window cover plate 1 and the substrate 2 is ≧ 0.5 mm, the substrate 2 may be a planar structure or a cavity structure with steps, and when the substrate 2 is a planar structure, the corresponding optical window cover plate 1 is a cavity structure; when the substrate 2 is a cavity structure with steps, the corresponding optical window cover plate 1 is a planar structure, and the height H4 of the steps is not less than 0.35 mm, so that gold wires are not damaged when the substrates are assembled and sealed conveniently.
Be equipped with the circuit pattern on base plate 2, base plate 2's material can be ceramic substrate, also can be metal substrate such as aluminum product, copper product etc. also can adopt other composite material that have high heat conduction and reflection of light characteristic, such as aluminium carborundum base plate, scribble the metal substrate of graphite alkene etc..
Further, the surface of the ceramic substrate is plated with aluminum or a high-reflection coating material such as PTFE is adopted, so that the overall light extraction performance of the device in the invisible light band, particularly the UVC band, is further improved.
When the optical window lens 102 is connected with the metal piece 101 in a sintering mode, the solder 5 for connecting the optical window lens 102 and the metal piece 101 in a welding mode is arranged between the optical window lens 102 and the metal piece 101, the solder 5 is annular, and the solder 5 is made of inorganic materials. The solder 5 comprises TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%.
The optical window lens 102 and the metal member 101 may be joined by welding, and the solder 5 is not required.
In the LED device, the material of the optical window lens 102 is quartz glass, the shape of the optical window lens 102 is preferably one of a square shape, a circular shape, an oval shape and a hemispherical shape, and when the shapes of the optical window lenses 102 are different, the shape of the metal member 101 is also changed adaptively for welding, as shown in the first embodiment and the second embodiment in the figure.
According to the LED device, the metal part 101 is made of kovar, copper or aluminum, nickel plating is required to be performed on the surface of the metal part 101, an extended metal welding edge is arranged at the edge part of the bottom of the metal part 101, the width H1 of the metal welding edge is not less than 0.3 mm, the metal welding edge is welded and connected with the metalized circuit layer 4, and the metalized circuit layer 4 is used for sealing the optical window cover plate 1 and the substrate 2 into a whole through a resistance welding or fusion welding process; the metallization circuit layer 4 is also annular, and its thickness H2 ≧ 60 microns, metallization circuit layer 4 surface is equipped with the cladding material, the material of cladding material is gold or nickel gold.
The present patent further claims a method for packaging the LED device, which includes:
an annular metallized circuit layer 4 is arranged at the edge of the substrate 2, the thickness H2 of the metallized circuit layer 4 is larger than or equal to 60 micrometers, and the surface of the metallized circuit layer 4 is subjected to gold plating or nickel gold plating;
the chip group 3 is bound on the substrate 2 through a solder paste, silver glue crystal fixing or eutectic process;
the metal piece 101 is manufactured through stamping of a precision die, and nickel plating is carried out on the surface of the metal piece 101;
cutting a quartz glass sheet matched with the size of the light through hole to manufacture an optical window lens 102, performing coating treatment on an annular area with the edge of the optical window lens 102 being less than or equal to 0.5 mm, wherein the coating component is nickel or copper, the coating thickness is greater than or equal to 10 micrometers, placing the optical window lens 102 into a metal piece 101 through a tool fixture, and welding the matched contact part of the quartz glass edge coating area and the metal piece by adopting a welding process to manufacture an optical window cover plate 1.
Or adding the solder 5 and sealing the optical window lens 102 and the metal piece 101 into the optical window cover plate 1 by adopting a sintering process.
The optical window cover plate 1 is assembled on the metallized circuit layer 4 of the substrate 2 through a jig, and the optical window cover plate 1 and the substrate 2 are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the LED device.
Further, the resistance welding process is parallel seam welding, and the fusion welding process is laser welding.
The substrate 2, the metal piece 101 and the optical window lens 102 are all made of inorganic materials, the solder, the metallized circuit layer and all the coatings are made of inorganic materials, the optical window lens 102 and the metal piece 101 are sealed and connected into a whole by adopting a sintering process or a fusion welding process to manufacture an optical window cover plate, and the optical window cover plate and the substrate 2 are combined into a whole by adopting a resistance welding process or a fusion welding process to manufacture an LED device, so that high air tightness and inorganic packaging are realized.
Compared with the traditional LED light source, the LED light source has the advantages of good air tightness, inorganic packaging and simple structure, and is mainly applied to light source devices which have high requirements on air tightness and reliability and are not suitable for organic material packaging. Especially in UVC and high-power IR LED light source devices, can better solve the problems that the glass or quartz optical window is easy to drop the lens, the device light attenuation is serious and the air tightness is insufficient in the existing glue sealing and the inorganic packaging schemes of the same type.
The embodiment of the present invention is described only for the preferred embodiment of the present invention, and not for the purpose of limiting the spirit and scope of the invention, and various modifications and improvements made to the technical solution of the present invention by those skilled in the art without departing from the design concept of the present invention shall fall within the protection scope of the present invention.
Claims (10)
1. An integrated IR light source device, characterized by: including base plate (2) the periphery of base plate (2) is equipped with metallization circuit layer (4) be equipped with light window apron (1) on metallization circuit layer (4), light window apron (1) is equipped with respectively including metalwork (101) and leads to the unthreaded hole, covers on metalwork (101) lead to the light window lens (102) of unthreaded hole, light window apron (1) has cavity structures, and light window apron (1) is located the top of base plate (2) makes light window apron (1) with form cavity (6) between base plate (2) be equipped with chipset (3) in cavity (6), chipset (3) are fixed on base plate (2), base plate (2) are planar structure.
2. An integrated IR light source device according to claim 1, wherein: the chip set (3) is a combination of a white light chip (301) and an infrared chip (302).
3. An integrated IR light source device according to claim 1, wherein: the chip group (3) is a combination of an ultraviolet chip and an infrared chip or a combination of a white light chip, an infrared chip and an ultraviolet chip.
4. An integrated IR light source device according to claim 2 or 3, wherein: and a solder (5) for connecting the optical window lens (102) and the metal piece (101) in a welding manner is arranged between the optical window lens (102) and the metal piece (101), and the solder (5) is made of an inorganic material.
5. An integrated IR light source device according to claim 2 or 3, wherein: the substrate (2) is made of one of ceramic, aluminum material, copper material and aluminum silicon carbide substrate.
6. An integrated IR light source device according to claim 2 or 3, wherein: the optical window lens (102) is made of quartz glass, and the shape of the optical window lens (102) is one of square, round, ellipsoid and hemisphere.
7. An integrated IR light source device according to claim 2 or 3, wherein: the metal part (101) is made of kovar, copper or aluminum, an extended metal welding edge is arranged on the edge part of the bottom of the metal part (101), the metal welding edge is connected with the metallized circuit layer (4) in a welding mode, the width H1 of the metal welding edge is larger than or equal to 0.3 mm, the thickness H2 of the metallized circuit layer (4) is larger than or equal to 60 microns, a plating layer is arranged on the surface of the metallized circuit layer (4), and the plating layer is made of gold or nickel; the surface of the metal piece (101) is provided with a nickel plating layer, and the depth H3 of the cavity (6) is not less than 0.5 mm.
8. A method of packaging an integrated IR light source device according to any of claims 1 to 6, comprising:
the chip set (3) is bound on the substrate (2) through a tin paste, silver glue crystal fixing or eutectic process;
an annular metallized circuit layer (4) is arranged at the edge of the substrate (2), the thickness of the circuit layer of the metallized circuit layer (4) is not less than 60um, and the surface of the metallized circuit layer (4) is subjected to gold plating or nickel gold processing;
manufacturing the metal piece (101) by stamping through a die, and carrying out nickel plating treatment on the surface of the metal piece (101);
cutting a quartz glass sheet matched with the size of the light through hole to manufacture an optical window lens (102), plating an annular area with the edge of the optical window lens (102) being less than or equal to 0.5 mm, wherein the plating thickness is less than or equal to 10 micrometers, placing the optical window lens (102) into a metal piece (101) through a tooling jig, and welding the edge plating area of the optical window lens (102) and the matched contact part of the metal piece (101) by adopting a welding process to manufacture an optical window cover plate (1), or adding a welding flux (5) to sinter the optical window lens (102) and the metal piece (101) into the optical window cover plate (1);
the optical window cover plate (1) is assembled on the metallized circuit layer (4) of the substrate (2) through a jig, and the optical window cover plate (1) and the substrate (2) are sealed into a whole through a resistance welding process or a fusion welding process to manufacture the integrated IR light source device.
9. The method of packaging an integrated IR light source device according to claim 8, wherein: the resistance welding process is parallel seam welding, and the fusion welding process is laser welding.
10. The method of packaging an integrated IR light source device according to claim 8, wherein: the solder (5) comprises TiCuBiZnMn, wherein Ti accounts for 6.8-25%, Cu accounts for 19.6-34%, Bi accounts for 4.2-7.3%, Zn accounts for 21-37%, and Mn accounts for 0.56-1.2%; the plating composition of the edge of the optical window lens (102) is nickel gold or copper.
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| CN202011273160.5A CN112259664A (en) | 2020-11-14 | 2020-11-14 | Integrated IR light source device and packaging method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115781115A (en) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | Parallel seam welding method for fan-shaped shell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115781115A (en) * | 2022-11-17 | 2023-03-14 | 青岛航天半导体研究所有限公司 | Parallel seam welding method for fan-shaped shell |
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