CN214313248U - High-luminous-efficiency LED - Google Patents
High-luminous-efficiency LED Download PDFInfo
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- CN214313248U CN214313248U CN202120358027.3U CN202120358027U CN214313248U CN 214313248 U CN214313248 U CN 214313248U CN 202120358027 U CN202120358027 U CN 202120358027U CN 214313248 U CN214313248 U CN 214313248U
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Abstract
The utility model discloses a high light efficiency LED, which comprises a substrate, a conductive circuit arranged on the substrate, a light emitting chip arranged on the first surface of the substrate and a reflecting layer; the conductive circuit comprises at least one first metal boss and at least one second metal boss which are positioned between the first surface and the reflective layer, the first metal boss and the second metal boss respectively penetrate through the reflective layer and expose the surfaces of the first metal boss and the second metal boss; the light emitting chip is provided with a light emitting surface and a welding surface which are opposite; the welding surface comprises at least one first welding pad and at least one second welding pad; the first welding pad is in conductive connection with the first metal boss, and the second welding pad is in conductive connection with the second metal boss. The utility model discloses a high light efficiency LED through the conductive circuit who takes the metal boss of setting up, makes the welding surface of luminous chip exceed reflection of light layer surface, has avoided the reflection of light layer to the stopping of coming from luminous chip side light-emitting, reaches the purpose that promotes the LED light efficiency by a wide margin.
Description
Technical Field
The utility model relates to a luminescent device technical field especially relates to a high light efficiency LED.
Background
LEDs have been widely used in lighting, backlighting and display applications, with high light efficiency being the most important performance indicator for LEDs.
A typical LED structure is shown in fig. 1, and includes a substrate 10, a light emitting chip 11 disposed on a first surface of the substrate 10, a conductive circuit, a reflective layer 12, a bank 13, and a light transmissive layer 14. The light emitting chip 11 is provided with at least one first bonding pad 11a and at least one second bonding pad 11b, and the conductive circuit includes at least one first bonding pad 15, at least one second bonding pad 16, at least one first interconnection metal 17, a first external bonding pad 18, and a second external bonding pad (not shown). The first pad 11a and the second pad 11b are electrically conductively connected to the first pad 15 and the second pad 16, respectively.
When the external power supply supplies power to the light emitting chip 11 through the conductive circuit, as shown in fig. 1, light emitted from the side surface of the light emitting chip 11 is blocked by the reflective layer 12 (as indicated by an arrow in fig. 1), and the light blocked by the reflective layer 12 cannot pass through the light transmitting layer 14, so that the light emitting efficiency of the LED is greatly reduced.
Therefore, due to the essential defects and shortcomings of the LED structure, the problem of light shading of the reflecting layer cannot be solved, and the improvement of the LED light efficiency is limited.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to provide a solve high light efficiency LED of the inherent contradiction between reflector layer and the light efficiency.
The utility model provides a technical scheme that its technical problem adopted is: providing a high light efficiency LED, comprising a substrate with a first surface and a second surface which are opposite, a conductive circuit arranged on the substrate, a light emitting chip arranged on the first surface and a light reflecting layer;
the conductive circuit comprises at least one first metal boss and at least one second metal boss which are positioned between the first surface and the reflective layer, and the first metal boss and the second metal boss respectively penetrate through the reflective layer and expose the surfaces of the first metal boss and the second metal boss;
the light emitting chip is provided with a light emitting surface and a welding surface which are opposite; the welding surface comprises at least one first welding pad and at least one second welding pad;
the first welding pad is in conductive connection with the first metal boss, and the second welding pad is in conductive connection with the second metal boss.
Preferably, the high light efficiency LED further comprises at least one light-transmitting layer; the euphotic layer is arranged on the first surface and wraps the light emitting surface and all side surfaces of the light emitting chip.
Preferably, the high light efficiency LED further comprises at least one protective layer; the protective layer is disposed on the light-transmitting layer.
Preferably, the protective layer has at least one opening, and the opening exposes the light-transmitting layer above the light-emitting chip.
Preferably, the protective layer is a single-layer or multi-layer structure.
Preferably, the light-reflecting layer is a single-layer or multi-layer structure.
Preferably, the high light efficiency LED further comprises at least one cofferdam; the cofferdam is arranged on the first surface of the substrate and surrounds the periphery of the light-emitting chip.
Preferably, the conductive circuit further comprises at least one first external bonding pad, at least one second external bonding pad and at least one interconnection metal;
the first external connection pad is arranged on the first surface and/or the second surface and is in conductive connection with the first metal boss through the interconnection metal;
the second external bonding pad is arranged on the first surface and/or the second surface and is in conductive connection with the second metal boss through the interconnection metal.
Preferably, the interconnect metal is disposed on the first surface; the interconnection metal is in conductive connection with the first external bonding pad on the second surface through a first conductive channel penetrating through the substrate, and is in conductive connection with the second external bonding pad on the second surface through a second conductive channel penetrating through the substrate.
Preferably, the second surface of the substrate is provided with at least one heat conducting pad.
The utility model has the advantages that: through setting up the conducting circuit who takes the metal boss, make the welding surface of emitting chip higher than reflection of light layer surface, avoided the reflection of light layer to coming from the blockking of emitting chip side light-emitting, reach the purpose that promotes the LED light efficiency by a wide margin.
The utility model discloses a high light efficiency LED's manufacturing method flow is short, simple process, low in manufacturing cost, is applicable to big large tracts of land industrialization production in batches.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
FIG. 1 is a schematic cross-sectional view of a prior art LED;
fig. 2 is a schematic cross-sectional structure diagram of a high luminous efficiency LED according to a first embodiment of the present invention;
fig. 3 is a schematic cross-sectional structure diagram of a high luminous efficacy LED according to a second embodiment of the present invention.
Fig. 4 is a schematic cross-sectional structure diagram of a high luminous efficacy LED according to a third embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure diagram of a high luminous efficacy LED according to a fourth embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a high light efficiency LED according to a fifth embodiment of the present invention;
fig. 7 is a schematic cross-sectional structure view of a high luminous efficacy LED according to a sixth embodiment of the present invention.
Detailed Description
In order to clearly understand the technical features, objects, and effects of the present invention, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 2, the high luminous efficacy LED of the first embodiment of the present invention includes a substrate 20, a conductive circuit disposed on the substrate 20, a light emitting chip 21 and a reflective layer 22. The substrate 20 has opposite first and second surfaces, and the light emitting chip 21 and the light reflecting layer 22 are both disposed on the first surface of the substrate 20.
The substrate 20 may be, but not limited to, a ceramic substrate, a glass fiber board, or a BT board.
The conductive circuit includes at least one first metal pad 23 and at least one second metal pad 24, and may further include at least one first external pad 25, at least one second external pad 26, and at least one interconnection metal 27.
The first metal boss 23 and the second metal boss 24 are arranged on the first surface of the substrate 20 at intervals in an insulating manner, located between the first surface and the reflective layer 22 and penetrating through the reflective layer 22, and exposed on the reflective layer 22, and the surfaces of the first metal boss 23 and the second metal boss 24 may be flush with the surface of the reflective layer 22 or higher than the surface of the reflective layer 22, so that the reflective layer 22 is exposed on the surfaces or tops of the first metal boss 23 and the second metal boss 24.
The reflective layer 22 is a single-layer or multi-layer structure and can be made of, but not limited to, white glue, cofferdam glue, silica gel or epoxy resin. And for the silica gel or the epoxy resin, one or more of titanium oxide powder, silver powder and aluminum powder are doped in the silica gel or the epoxy resin.
The first external connection pad 25 may be disposed on the first surface and/or the second surface of the substrate 20 and electrically conductively connected to the first metal bump 23 through the interconnection metal 27. Similarly, the second external pad 26 may be disposed on the first surface and/or the second surface of the substrate 20 and electrically conductively connected to the second metal bump 24 through the interconnection metal 27. As shown in fig. 2, in the present embodiment, the first external connection pads 25 are provided on the first surface (the exposed surface on which the light reflecting layer 22 is not provided) of the substrate 20 and connected to the interconnection metals 27, and the second external connection pads 26 are provided on the first surface (the exposed surface on which the light reflecting layer 22 is not provided) of the substrate 20 and connected to the interconnection metals 27.
The light emitting chip 21 is provided with one or more. The light emitting chip 21 has opposite light emitting surfaces and bonding surfaces, and the light emitting chip 21 faces the substrate 20 with the bonding surfaces and is disposed on the first metal bump 23 and the second metal bump 24, and is electrically conductively connected with the first metal bump 23 and the second metal bump 24. For the arrangement of a plurality of light emitting chips 21, the series and/or parallel connection of the light emitting chips 21 is realized by the interconnection metal 27.
Specifically, the bonding surface of the light emitting chip 21 includes at least one first pad 211 and at least one second pad 212. The first bonding pad 211 is electrically connected to the first metal bump 23, and the second bonding pad 212 is electrically connected to the second metal bump 24. The connection means may be, but is not limited to, one or more of laser welding, reflow soldering, eutectic soldering, or thermal compression soldering.
The light emitting chip 21 is connected with the metal boss through the welding pad, so that the light emitting chip 21 is positioned above the reflecting layer 22, and the welding surface of the light emitting chip 21 can be tightly attached to the surface of the reflecting layer 22 or a gap is reserved. The side surface of the light emitting chip 21 is not blocked by the reflective layer 22, so that the light emitted from the side surface of the light emitting chip 21 is not blocked by the reflective layer 22, and the light emitting efficiency of the LED is improved.
The utility model discloses the manufacturing method of high light efficiency LED of first embodiment can include following step:
s1, a conductive circuit is provided on the substrate 20.
The disposing of the conductive circuit includes disposing a first metal pad 23, a second metal pad 24, a first external pad 25, a second external pad 26, and an interconnection metal 27 on the first surface of the substrate 20, and connecting the first external pad 25 to the first metal pad 23 through the interconnection metal 27, and connecting the second external pad 26 to the second metal pad 24 through the interconnection metal 27.
S2, disposing the reflective layer 22 on the first surface of the substrate 20, so that the first metal bumps 23 and the second metal bumps 24 of the conductive circuit penetrate through the reflective layer 22, and the surfaces of the first metal bumps 23 and the second metal bumps 24 are exposed.
The light reflecting layer 22 can be arranged in a dispensing, standing and leveling manner. The light reflecting layer 22 covers part or all of the first surface of the substrate 20 and also covers the interconnection metal 27, but exposes the surfaces of the first external connection pads 25 and the second external connection pads 26 provided on the first surface.
In order to prevent the light reflecting layer 22 from covering the surfaces of the first external connection pad 25 and the second external connection pad 26 when leveling, a dam may be formed on the outer sides of the first external connection pad 25 and the second external connection pad 26 before dispensing. The dam is removed after the reflective layer 22 is cured, and the dam can be reserved as a part of the high-light-efficiency LED.
S3, disposing the light emitting chip 21 on the first surface of the substrate 20, and electrically connecting the first bonding pad 211 on the bonding surface of the light emitting chip 21 with the first metal pad 23, and electrically connecting the second bonding pad 212 with the second metal pad 24.
The connection between the solder pads and the corresponding metal bosses may be, but is not limited to, one or more of laser welding, reflow soldering, eutectic soldering, and thermal compression soldering.
As shown in fig. 3, the high light efficiency LED of the second embodiment of the present invention includes a substrate 30, a conductive circuit disposed on the substrate 30, a light emitting chip 31 and a reflective layer 32. The substrate 30 has opposite first and second surfaces, and the light emitting chip 31 and the light reflecting layer 32 are both disposed on the first surface of the substrate 30.
The conductive circuit includes at least one first metal pad 33, at least one second metal pad 34, at least one first external pad 35, at least one second external pad 36, and at least one interconnection metal 37. Like the first embodiment described above, the first metal bumps 33 and the second metal bumps 34 are provided on the first surface of the substrate 30 with insulation therebetween, and the interconnection metal 37 is provided on the first surface of the substrate 30 and is electrically conductively connected to the first metal bumps 33 and the second metal bumps 34, respectively. In the case of a plurality of light emitting chips 31, the light emitting chips 31 are connected in series and/or in parallel by the interconnection metal 37. The light emitting chip 31 is electrically conductively connected to the first and second metal bumps 33 and 34 through the first and second pads 311 and 312 on the bonding surface thereof, respectively.
Different from the first embodiment described above: in the present embodiment, the first external connection pad 35 and the second external connection pad 36 are disposed on the second surface of the substrate 30 and insulated from each other.
Corresponding to the arrangement of the first external connection pad 35 and the second external connection pad 36 on the second surface, the interconnection metal 37 is conductively connected to the first external connection pad 35 through a first conductive via 38 extending through the substrate 30 and to the second external connection pad 36 through a second conductive via 39 extending through the substrate 30.
Further, the high light efficiency LED of the present embodiment further includes at least one light-transmissive layer 310. The light-transmitting layer 310 is disposed on the first surface of the substrate 30, wraps the light-emitting surface and all sides of the light-emitting chip 21, and may also extend to cover part or all of the surface of the light-reflecting layer 32, part or all of the surface of the first surface of the substrate 30, and part or all of the conductive circuit on the first surface.
The high luminous efficiency LED of this embodiment further includes a heat conducting pad 320 disposed on the second surface of the substrate 30, and the heat conducting pad is connected to the heat sink in a heat conducting manner, so that the heat conducting capability of the high luminous efficiency LED can be greatly improved.
The utility model discloses the manufacturing method of high light efficiency LED of second embodiment can include following step:
s1, a conductive circuit is provided on the substrate 30.
The arrangement of the conductive circuit comprises: providing a first metal boss 33, a second metal boss 34 and an interconnection metal 37 on a first surface of the substrate 30, and connecting the interconnection metal 37 with the first metal boss 33 and the second metal boss 34; a first external connection pad 35, a second external connection pad 36 are provided on the second surface of the substrate 30, and a first conductive via 38 and a second conductive via 39 are provided through the substrate 30, connecting the first conductive via 38 with the interconnection metal 37 and the first external connection pad 35, and connecting the second conductive via 39 with the interconnection metal 37 and the second external connection pad 36.
S2, disposing the reflective layer 32 on the first surface of the substrate 30, so that the first metal bumps 33 and the second metal bumps 34 of the conductive circuit penetrate through the reflective layer 32, and the surfaces of the first metal bumps 33 and the second metal bumps 34 are exposed.
S3, disposing the light emitting chip 31 on the first surface of the substrate 30, and electrically connecting the first bonding pad 311 on the bonding surface of the light emitting chip 31 to the first metal pad 33, and electrically connecting the second bonding pad 312 to the second metal pad 34.
S4, providing a light-transmitting layer 310 on the first surface of the substrate 30; the light-transmitting layer 310 wraps the light-emitting surface and all side surfaces of the light-emitting chip 31.
As shown in fig. 4, the high light efficiency LED of the third embodiment of the present invention includes a substrate 40, a conductive circuit disposed on the substrate 40, a light emitting chip 41, a reflective layer 42, and a light transmissive layer 410.
The substrate 40 has a first surface and a second surface opposite to each other, and the light emitting chip 41, the reflective layer 42 and the light transmissive layer 410 are all disposed on the first surface of the substrate 40.
Different from the second embodiment described above are: the high light efficiency LED of this embodiment further includes at least one protection layer 413. The protective layer 413 is disposed on the first surface of the substrate 40 and may extend over part or all of the surface of the light-reflecting layer 42, part or all of the surface of the first surface of the substrate 40, and part or all of the conductive circuitry on the first surface.
The protective layer 413 is a single-layer or multi-layer structure, the surface of which may be, but not limited to, one or more of a flat surface, a concave-convex surface, and an arc surface, and may be made of, but not limited to, at least one of ink, silica gel, epoxy resin, silica gel doped with powder, and epoxy resin doped with powder; the powder includes but is not limited to one or more of titanium oxide powder, coloring powder, silver powder, aluminum powder, diffusion powder and matte powder.
The protective layer 413 may be disposed by one or more of, but not limited to, spraying, printing, stamping, dispensing, and molding.
The utility model discloses the manufacturing method of high light efficiency LED of third embodiment can include following step:
s1, a conductive circuit is provided on the substrate 40.
The arrangement of the conductive circuit comprises: arranging a first metal boss 43, a second metal boss 44 and an interconnection metal 47 on a first surface of the substrate 40, and connecting the interconnection metal 47 with the first metal boss 43 and the second metal boss 44; first and second external pads 45 and 46 are provided on the second surface of the substrate 40, and first and second conductive vias 48 and 49 penetrating the substrate 40 are provided, the first conductive via 48 being connected to the interconnection metal 47 and the first external pad 45, and the second conductive via 49 being connected to the interconnection metal 47 and the second external pad 46.
S2, disposing the reflective layer 42 on the first surface of the substrate 40, so that the first metal bumps 43 and the second metal bumps 44 of the conductive circuit penetrate through the reflective layer 42, and the surfaces of the first metal bumps 43 and the second metal bumps 44 are exposed.
S3, disposing the light emitting chip 41 on the first surface of the substrate 40, and electrically connecting the first bonding pad 411 on the bonding surface of the light emitting chip 41 to the first metal pad 43, and electrically connecting the second bonding pad 412 to the second metal pad 44.
S4, providing a light-transmitting layer 410 on the first surface of the substrate 40; the light-transmitting layer 410 wraps the light-emitting surface and all side surfaces of the light-emitting chip 31.
S5, disposing the protection layer 413 on the first surface of the substrate 40; the protective layer 413 may extend over part or all of the surface of the light-reflecting layer 42, part or all of the first surface of the substrate 40, and part or all of the conductive circuitry on the first surface.
The protective layer 413 is a single-layer or multi-layer structure, the surface of which may be, but not limited to, one or more of a flat surface, a concave-convex surface, and an arc surface, and may be made of, but not limited to, at least one of ink, silica gel, epoxy resin, silica gel doped with powder, and epoxy resin doped with powder; the powder includes but is not limited to one or more of titanium oxide powder, coloring powder, silver powder, aluminum powder, diffusion powder and matte powder.
The protective layer 413 may be disposed by one or more of, but not limited to, spraying, printing, stamping, dispensing, and molding.
As shown in fig. 5, the high light efficiency LED of the fourth embodiment of the present invention includes a substrate 50, a conductive circuit disposed on the substrate 50, a light emitting chip 51, a reflective layer 52, a light transmissive layer 510, and a protective layer 513.
The substrate 50 has opposite first and second surfaces, and the light emitting chip 51, the light reflecting layer 52, the light transmitting layer 510, and the protective layer 513 are disposed on the first surface of the substrate 50. The specific arrangement of the conductive circuit, the light emitting chip 51, the reflective layer 52, the transparent layer 510 and the protective layer 513 can refer to the third embodiment, and will not be described herein again.
Different from the third embodiment described above: in this embodiment, the protection layer 513 has at least one opening 514 exposing the light-transmitting layer 510 above the light-emitting chip 51.
The utility model discloses the manufacturing approach of high light efficiency LED of fourth embodiment can refer to the manufacturing approach of above-mentioned third implementation, and what be different from above-mentioned third embodiment is: when the protective layer 513 is provided, an opening 514 is provided in the protective layer 513, and the opening 514 corresponds to the upper side of the light emitting chip 51, so that the light-transmitting layer 510 above the light emitting chip 51 is exposed.
As shown in fig. 6, the high light efficiency LED according to the fifth embodiment of the present invention includes a substrate 60, a conductive circuit disposed on the substrate 60, a light emitting chip 61, and a reflective layer 62. The substrate 60 has opposite first and second surfaces, and the light emitting chip 61 and the light reflecting layer 62 are disposed on the first surface of the substrate 60.
The conductive circuit includes at least one first metal bump 63, at least one second metal bump 64, at least one first external pad 65, at least one second external pad 66, and at least one interconnection metal 67. The conductive circuit and the reflective layer 62 can be disposed as described in the first embodiment, and are not described herein again.
Further, the high light efficiency LED of the present embodiment further includes at least one dam 68 and at least one transparent layer 69 disposed on the first surface of the substrate 60.
The bank 68 is provided around the periphery of the light emitting chip 61 on the first surface of the substrate 60. The bottom of the dam 68 may be located on the surface of the light-reflecting layer 62, or on the exposed first surface of the substrate 60, or on the exposed conductive circuit. The light-transmitting layer 69 is filled in the inner space surrounded by the cofferdam 68 and wraps the light-emitting surface and all sides of the light-emitting chip 61.
The dam 68 may be made of, but not limited to, at least one of white glue, dam glue, silicone and epoxy. One or more of titanium oxide powder, silver powder and aluminum powder are doped in the silica gel and/or the epoxy resin.
Light transmitting layer 69 is a single or multi-layer structure, and its surface may be, but is not limited to, one or more of a flat surface, a concave-convex surface, and an arc-shaped surface. The light-transmitting layer 69 may be made of, but not limited to, at least one of silica gel, epoxy resin, silica gel doped with powder, and epoxy resin doped with powder; the powder comprises one or more of fluorescent powder, diffusion powder and matte powder. Clear layer 69 may be provided by, but is not limited to, one or more of spraying, printing, and dispensing.
The utility model discloses the manufacturing method of high light efficiency LED of fifth embodiment can include following step:
s1, a conductive circuit is provided on the substrate 60.
The disposing of the conductive circuit includes disposing a first metal pad 63, a second metal pad 64, a first external pad 65, a second external pad 66, and an interconnection metal 67 on the first surface of the substrate 60, and connecting the first external pad 65 to the first metal pad 63 through the interconnection metal 67, and connecting the second external pad 66 to the second metal pad 64 through the interconnection metal 67.
S2, disposing the reflective layer 62 on the first surface of the substrate 60, so that the first metal bumps 63 and the second metal bumps 64 of the conductive circuit penetrate through the reflective layer 62, and the surfaces of the first metal bumps 63 and the second metal bumps 64 are exposed.
The light reflecting layer 62 can be disposed by dispensing, standing and leveling. The light reflecting layer 62 covers part or all of the first surface of the substrate 60, but exposes the surfaces of the first external connection pads 65 and the second external connection pads 66 disposed on the first surface.
In order to prevent the light reflecting layer 62 from covering the surfaces of the first external bonding pad 65 and the second external bonding pad 66 when leveling, a dam may be formed on the outer sides of the first external bonding pad 65 and the second external bonding pad 66 before dispensing. The reflector layer 62 is cured and the dam is removed or retained as part of the high efficiency LED.
S3, the light emitting chip 61 is disposed on the first surface of the substrate 60, and the first bonding pad 611 on the bonding surface of the light emitting chip 61 is electrically connected to the first metal pad 63, and the second bonding pad 612 is electrically connected to the second metal pad 64.
S4, a bank 68 is provided on the light reflecting layer 62, and the bank 68 encloses the light emitting chip 61 in the inner space thereof.
S5, filling a transparent layer 69 inside the bank 68; the light-transmitting layer 69 wraps the light-emitting surface and all the side surfaces of the light-emitting chip 61.
As shown in fig. 7, the high light efficiency LED of the sixth embodiment of the present invention includes a substrate 70, a conductive circuit disposed on the substrate 70, a light emitting chip 71 and a reflective layer 72. The substrate 70 has opposite first and second surfaces, and the light emitting chip 71 and the light reflecting layer 72 are disposed on the first surface of the substrate 70.
The conductive circuit includes at least one first metal pad 73, at least one second metal pad 74, at least one first external pad 75, at least one second external pad 76, and at least one interconnection metal 77. The first metal bump 73, the second metal bump 74, and the interconnection metal 77 are disposed on a first surface of the substrate 70, and the first and second external connection pads 75 and 76 are disposed on a second surface of the substrate 70 and are conductively connected to the first and second external connection pads 75 and 76 through first and second conductive vias 78 and 79, respectively, that penetrate the substrate 70.
The conductive circuit and the reflective layer 72 can be disposed as described above with reference to the second embodiment, and are not described herein again.
Further, the high light efficiency LED of the present embodiment further includes at least one dam 720 and at least one transparent layer 710 disposed on the first surface of the substrate 70.
The bank 720 is provided around the periphery of the light emitting chip 71 on the first surface of the substrate 70. The bottom of the dam 720 may be located on the surface of the light reflecting layer 72, or on the exposed first surface of the substrate 70, or on the exposed conductive circuit. The light-transmitting layer 710 is filled in the inner space surrounded by the cofferdam 720 and wraps the light-emitting surface and all sides of the light-emitting chip 71.
The transparent layer 710 has a single-layer or multi-layer structure, and the surface thereof may be, but is not limited to, one or more of a flat surface, a concave-convex surface, and an arc surface. The light-transmitting layer 710 may be made of, but not limited to, at least one of silica gel, epoxy resin, silica gel doped with powder, and epoxy resin doped with powder; the powder comprises one or more of fluorescent powder, diffusion powder and matte powder. Clear layer 710 may be provided using, but not limited to, one or more of a combination of spraying, printing, stamping, dispensing, and molding process.
The utility model discloses the manufacturing method of high light efficiency LED of sixth embodiment can include following step:
s1, a conductive circuit is provided on the substrate 70.
The arrangement of the conductive circuit comprises: providing a first metal bump 73, a second metal bump 74, and an interconnection metal 77 on a first surface of the substrate 70, and connecting the interconnection metal 77 with the first metal bump 75 and the second metal bump 74; a first external pad 75, a second external pad 76 are provided on the second surface of the substrate 70, and a first conductive via 78 and a second conductive via 79 are provided through the substrate 70, connecting the first conductive via 78 with the interconnection metal 77 and the first external pad 75, and connecting the second conductive via 79 with the interconnection metal 77 and the second external pad 76.
S2, disposing the reflective layer 72 on the first surface of the substrate 70, so that the first metal bumps 75 and the second metal bumps 74 of the conductive circuit penetrate through the reflective layer 72, and the surfaces of the first metal bumps 75 and the second metal bumps 74 are exposed.
S5, the light emitting chip 71 is disposed on the first surface of the substrate 70, and the first bonding pad 711 on the bonding surface of the light emitting chip 71 is electrically connected to the first metal pad 73, and the second bonding pad 715 is electrically connected to the second metal pad 74.
S4, a bank 720 is provided on the light reflecting layer 72, and the bank 720 surrounds the light emitting chip 71 in the inner space thereof.
S5, filling a transparent layer 710 inside the bank 720; the light-transmitting layer 710 wraps the light-emitting surface and all side surfaces of the light-emitting chip 71.
The above only is the embodiment of the present invention, not limiting the patent scope of the present invention, all the equivalent structures or equivalent processes that are used in the specification and the attached drawings or directly or indirectly applied to other related technical fields are included in the patent protection scope of the present invention.
Claims (10)
1. A high-luminous-efficiency LED is characterized by comprising a substrate, a conductive circuit, a light-emitting chip and a light reflecting layer, wherein the substrate is provided with a first surface and a second surface which are opposite to each other;
the conductive circuit comprises at least one first metal boss and at least one second metal boss which are positioned between the first surface and the reflective layer, and the first metal boss and the second metal boss respectively penetrate through the reflective layer and expose the surfaces of the first metal boss and the second metal boss;
the light emitting chip is provided with a light emitting surface and a welding surface which are opposite; the welding surface comprises at least one first welding pad and at least one second welding pad;
the first welding pad is in conductive connection with the first metal boss, and the second welding pad is in conductive connection with the second metal boss.
2. The high luminous efficacy LED of claim 1, further comprising at least one light transmissive layer; the euphotic layer is arranged on the first surface and wraps the light emitting surface and all side surfaces of the light emitting chip.
3. The high luminous efficacy LED of claim 2, further comprising at least one protective layer; the protective layer is disposed on the light-transmitting layer.
4. The LED of claim 3, wherein the protective layer has at least one opening exposing the transparent layer above the light emitting chip.
5. The high light efficiency LED of claim 3, wherein the protective layer is a single layer or a multi-layer structure.
6. The high light efficiency LED of claim 1, wherein the light reflecting layer is a single layer or a multi-layer structure.
7. The high luminous efficacy LED of claim 1, further comprising at least one dam; the cofferdam is arranged on the first surface of the substrate and surrounds the periphery of the light-emitting chip.
8. The high light efficiency LED of any one of claims 1-7 wherein said conductive circuit further comprises at least a first external bond pad, at least a second external bond pad, and at least one interconnect metal;
the first external connection pad is arranged on the first surface and/or the second surface and is in conductive connection with the first metal boss through the interconnection metal;
the second external bonding pad is arranged on the first surface and/or the second surface and is in conductive connection with the second metal boss through the interconnection metal.
9. The high light efficiency LED of claim 8 wherein the interconnect metal is disposed on the first surface; the interconnection metal is in conductive connection with the first external bonding pad on the second surface through a first conductive channel penetrating through the substrate, and is in conductive connection with the second external bonding pad on the second surface through a second conductive channel penetrating through the substrate.
10. The high light efficiency LED of any one of claims 1-7 wherein the second surface of the substrate is provided with at least one thermally conductive pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120358027.3U CN214313248U (en) | 2021-02-07 | 2021-02-07 | High-luminous-efficiency LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120358027.3U CN214313248U (en) | 2021-02-07 | 2021-02-07 | High-luminous-efficiency LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214313248U true CN214313248U (en) | 2021-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120358027.3U Active CN214313248U (en) | 2021-02-07 | 2021-02-07 | High-luminous-efficiency LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214313248U (en) |
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2021
- 2021-02-07 CN CN202120358027.3U patent/CN214313248U/en active Active
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