CN105984840B - 用于纳米桥弱链接的硅化纳米线 - Google Patents
用于纳米桥弱链接的硅化纳米线 Download PDFInfo
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- CN105984840B CN105984840B CN201610143130.XA CN201610143130A CN105984840B CN 105984840 B CN105984840 B CN 105984840B CN 201610143130 A CN201610143130 A CN 201610143130A CN 105984840 B CN105984840 B CN 105984840B
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- 239000002070 nanowire Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000002096 quantum dot Substances 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910005883 NiSi Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000004513 sizing Methods 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910012990 NiSi2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 2
- 229910021140 PdSi Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910016344 CuSi Inorganic materials 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- -1 silicide Compound Chemical class 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
- H10N60/0688—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/659,749 | 2015-03-17 | ||
US14/659,749 US9559284B2 (en) | 2015-03-17 | 2015-03-17 | Silicided nanowires for nanobridge weak links |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105984840A CN105984840A (zh) | 2016-10-05 |
CN105984840B true CN105984840B (zh) | 2017-11-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610143130.XA Active CN105984840B (zh) | 2015-03-17 | 2016-03-14 | 用于纳米桥弱链接的硅化纳米线 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9559284B2 (zh) |
CN (1) | CN105984840B (zh) |
DE (1) | DE102016204201B4 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10516248B1 (en) * | 2016-07-01 | 2019-12-24 | United States Of America As Represented By Secretary Of The Navy | In-plane Josephson junction array terahertz laser |
US11385099B1 (en) * | 2017-06-26 | 2022-07-12 | SeeQC Inc. | Integrated superconducting nanowire digital photon detector |
GB201718897D0 (en) | 2017-11-15 | 2017-12-27 | Microsoft Technology Licensing Llc | Superconductor-semiconductor fabrication |
US10380494B2 (en) * | 2017-08-04 | 2019-08-13 | International Business Machines Corporation | Josephson junctions for improved qubits |
CN107704649A (zh) * | 2017-08-23 | 2018-02-16 | 中国科学院上海微系统与信息技术研究所 | 约瑟夫森结电路模型和超导集成电路结构及建立方法 |
CN107871812B (zh) * | 2017-10-25 | 2019-11-26 | 中国科学院上海微系统与信息技术研究所 | 基于3d纳米桥结的超导量子干涉滤波器及其制备方法 |
CN111725382B (zh) * | 2019-03-22 | 2022-02-22 | 中国科学院上海微系统与信息技术研究所 | 超导磁通量子存储单元结构及其写入和读取方法 |
US10978631B2 (en) * | 2019-09-11 | 2021-04-13 | International Business Machines Corporation | Combined dolan bridge and quantum dot josephson junction in series |
US11107966B2 (en) | 2019-11-11 | 2021-08-31 | International Business Machines Corporation | Two-sided Majorana fermion quantum computing devices fabricated with ion implant methods |
US11121304B2 (en) | 2019-11-14 | 2021-09-14 | International Business Machines Corporation | Junction fabrication method for forming qubits |
US11316022B2 (en) | 2019-11-19 | 2022-04-26 | International Business Machines Corporation | Ion implant defined nanorod in a suspended Majorana fermion device |
US11563162B2 (en) * | 2020-01-09 | 2023-01-24 | International Business Machines Corporation | Epitaxial Josephson junction transmon device |
US11107968B1 (en) | 2020-03-20 | 2021-08-31 | International Business Machines Corporation | All-semiconductor Josephson junction device for qubit applications |
US11538977B2 (en) | 2020-12-09 | 2022-12-27 | International Business Machines Corporation | Qubits with ion implant Josephson junctions |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569408B2 (ja) * | 1989-09-26 | 1997-01-08 | 郵政省通信総合研究所長 | 多数の微小弱結合からなるジョセフソン素子 |
JPH04321285A (ja) * | 1991-04-19 | 1992-11-11 | Sanyo Electric Co Ltd | 超電導電磁波検出素子及びその作製方法 |
DE4434026A1 (de) * | 1994-09-23 | 1996-03-28 | Inst Physikalische Hochtech Ev | Abgleichbarer Josephsonkontakt |
CN1046057C (zh) * | 1996-10-31 | 1999-10-27 | 南开大学 | 高温超导平面薄膜本征约瑟夫森结阵及其制备方法 |
CN1234176C (zh) * | 2003-05-23 | 2005-12-28 | 南京大学 | 耐熔微掩模法制备高温超导Josephson结的方法 |
US6897111B2 (en) * | 2003-07-28 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method using quasi-planar double gated fin field effect transistor process for the fabrication of a thyristor-based static read/write random-access memory |
WO2005093831A1 (en) | 2004-02-13 | 2005-10-06 | President And Fellows Of Harvard College | Nanostructures containing metal-semiconductor compounds |
JP2005260113A (ja) * | 2004-03-15 | 2005-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導三端子素子及びその製造方法 |
US7749922B2 (en) | 2005-05-05 | 2010-07-06 | The Board Of Trustees Of The University Of Illinois | Nanowire structures and electrical devices |
KR100980738B1 (ko) * | 2008-10-10 | 2010-09-08 | 한국전자통신연구원 | 반도체 나노와이어 센서 소자의 제조 방법 및 이에 따라 제조된 반도체 나노와이어 센서 소자 |
US7884004B2 (en) | 2009-02-04 | 2011-02-08 | International Business Machines Corporation | Maskless process for suspending and thinning nanowires |
US20120305893A1 (en) * | 2010-02-19 | 2012-12-06 | University College Cork-National University of Ireland ,Cork | Transistor device |
FR2962850B1 (fr) | 2010-07-19 | 2012-08-17 | Commissariat Energie Atomique | Dispositif et procede pour former sur un nanofil en semi-conducteur un alliage de ce semi-conducteur avec un metal ou un metalloide. |
US8247319B1 (en) * | 2011-02-07 | 2012-08-21 | International Business Machines Corporation | Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions |
US9312426B2 (en) | 2011-12-07 | 2016-04-12 | International Business Machines Corporation | Structure with a metal silicide transparent conductive electrode and a method of forming the structure |
WO2013095384A1 (en) * | 2011-12-20 | 2013-06-27 | Intel Corporation | Semiconductor device with isolated body portion |
US8841764B2 (en) | 2012-01-31 | 2014-09-23 | International Business Machines Corporation | Superconducting quantum circuit having a resonant cavity thermalized with metal components |
CN102694117B (zh) * | 2012-05-25 | 2015-08-19 | 中国科学院上海微系统与信息技术研究所 | 一种基于超导纳米线的高频振荡器及其制备方法 |
US8610241B1 (en) * | 2012-06-12 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Homo-junction diode structures using fin field effect transistor processing |
US8969963B2 (en) * | 2012-10-12 | 2015-03-03 | International Business Machines Corporation | Vertical source/drain junctions for a finFET including a plurality of fins |
CN104299905B (zh) * | 2013-07-16 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | 无结晶体管及其制造方法 |
EP3164889B1 (en) * | 2014-07-02 | 2023-06-07 | University of Copenhagen | A semiconductor josephson junction comprising a semiconductor nanowire and superconductor layers thereon |
-
2015
- 2015-03-17 US US14/659,749 patent/US9559284B2/en not_active Expired - Fee Related
-
2016
- 2016-03-14 CN CN201610143130.XA patent/CN105984840B/zh active Active
- 2016-03-15 DE DE102016204201.7A patent/DE102016204201B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
US20160276570A1 (en) | 2016-09-22 |
DE102016204201B4 (de) | 2017-12-28 |
CN105984840A (zh) | 2016-10-05 |
DE102016204201A1 (de) | 2016-09-22 |
US9559284B2 (en) | 2017-01-31 |
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Effective date of registration: 20231117 Address after: California, USA Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd. Address before: Grand Cayman, Cayman Islands Patentee before: GLOBALFOUNDRIES INC. Effective date of registration: 20231117 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: USA New York Patentee before: Core USA second LLC Effective date of registration: 20231117 Address after: USA New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |