CN105940493B - 固态成像装置、固态成像装置的制造方法和电子设备 - Google Patents

固态成像装置、固态成像装置的制造方法和电子设备 Download PDF

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Publication number
CN105940493B
CN105940493B CN201580006012.8A CN201580006012A CN105940493B CN 105940493 B CN105940493 B CN 105940493B CN 201580006012 A CN201580006012 A CN 201580006012A CN 105940493 B CN105940493 B CN 105940493B
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signal processing
processing circuit
imaging device
solid
state imaging
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CN105940493A (zh
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泉原邦彦
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201580006012.8A 2014-04-21 2015-04-09 固态成像装置、固态成像装置的制造方法和电子设备 Expired - Fee Related CN105940493B (zh)

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JP2014-087603 2014-04-21
JP2014087603 2014-04-21
JP2014129952A JP6245474B2 (ja) 2014-04-21 2014-06-25 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
JP2014-129952 2014-06-25
PCT/JP2015/001990 WO2015162867A1 (en) 2014-04-21 2015-04-09 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

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Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
EP3304537A1 (en) * 2015-06-05 2018-04-11 Apple Inc. Emission control apparatuses and methods for a display panel
KR102376504B1 (ko) * 2015-07-02 2022-03-18 삼성전자주식회사 반도체 소자
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
US9930277B2 (en) * 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
JP6885391B2 (ja) * 2016-02-29 2021-06-16 ソニーグループ株式会社 半導体装置
JP6494551B2 (ja) 2016-03-28 2019-04-03 アンリツ株式会社 電界強度分布測定装置及び電界強度分布測定方法
JP6919154B2 (ja) * 2016-03-31 2021-08-18 ソニーグループ株式会社 固体撮像素子、撮像装置、および電子機器
JP2017183658A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
CN106454162B (zh) * 2016-09-06 2019-05-31 豪威科技(上海)有限公司 堆栈式cmos图像传感器及其制造方法
JP7055544B2 (ja) * 2016-11-29 2022-04-18 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器
JP2018101966A (ja) * 2016-12-22 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、および、固体撮像素子の制御方法
US10832609B2 (en) * 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
US10070090B2 (en) * 2017-02-03 2018-09-04 SmartSens Technology (U.S.), Inc. Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS
JP6928746B2 (ja) * 2017-04-10 2021-09-01 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
EP4235793A3 (en) 2017-06-29 2023-10-04 Sony Semiconductor Solutions Corporation Wafer bonded back illuminated imager
TWI649864B (zh) * 2017-06-30 2019-02-01 香港商京鷹科技股份有限公司 影像感測裝置及影像感測方法
KR102356913B1 (ko) * 2017-07-03 2022-02-03 에스케이하이닉스 주식회사 이미지 센서
JP7102119B2 (ja) * 2017-09-29 2022-07-19 キヤノン株式会社 半導体装置および機器
WO2019069559A1 (ja) 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TWI788430B (zh) * 2017-10-30 2023-01-01 日商索尼半導體解決方案公司 背面照射型之固體攝像裝置、背面照射型之固體攝像裝置之製造方法、攝像裝置及電子機器
US10608043B2 (en) 2017-12-15 2020-03-31 Atomera Incorporation Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10615209B2 (en) * 2017-12-15 2020-04-07 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10529768B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated Method for making CMOS image sensor including pixels with read circuitry having a superlattice
US10367028B2 (en) 2017-12-15 2019-07-30 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10608027B2 (en) 2017-12-15 2020-03-31 Atomera Incorporated Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10529757B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated CMOS image sensor including pixels with read circuitry having a superlattice
WO2019118840A1 (en) * 2017-12-15 2019-06-20 Atomera Incorporated Cmos image sensor including stacked semiconductor chips and readout circuitry including a superlattice and related methods
JP2019165312A (ja) 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2019179782A (ja) * 2018-03-30 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
JP2020047734A (ja) 2018-09-18 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP7452962B2 (ja) * 2018-11-16 2024-03-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7292860B2 (ja) * 2018-11-22 2023-06-19 キヤノン株式会社 光電変換装置
KR102558301B1 (ko) * 2018-12-13 2023-07-24 에스케이하이닉스 주식회사 유기 픽셀 어레이 및 무기 픽셀 어레이를 갖는 이미지 센싱 디바이스
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
US11917312B2 (en) * 2019-11-01 2024-02-27 Sony Semiconductor Solutions Corporation Solid-state imaging apparatus
JP7523904B2 (ja) 2019-12-27 2024-07-29 キヤノン株式会社 検査装置および半導体装置の製造方法
JP7583562B2 (ja) * 2020-09-11 2024-11-14 キヤノン株式会社 光電変換装置及び撮像システム
JP2021061618A (ja) * 2020-12-15 2021-04-15 株式会社ニコン 撮像素子および撮像装置
JP7646380B2 (ja) 2021-02-04 2025-03-17 キヤノン株式会社 光電変換装置、光電変換システム、移動体
KR20230136198A (ko) * 2021-03-11 2023-09-26 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 방사선 촬상 장치
JPWO2023132002A1 (enExample) * 2022-01-05 2023-07-13
JP2024003462A (ja) 2022-06-27 2024-01-15 キヤノン株式会社 撮像素子及び撮像装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258831A (zh) * 2012-02-21 2013-08-21 索尼公司 固态成像器件及其制造方法以及相机系统
US20140035083A1 (en) * 2012-07-31 2014-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Elevated Photodiode with a Stacked Scheme
CN103650476A (zh) * 2011-05-12 2014-03-19 橄榄医疗公司 对具有最小纵向互连的混合图像传感器使用堆叠方案的像素阵列区域最优化

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497844A (en) 1980-08-18 1985-02-05 Fryday Corporation Method for producing a restructured food product
JP2902506B2 (ja) 1990-08-24 1999-06-07 キヤノン株式会社 半導体装置の製造方法及び半導体装置
JP4497844B2 (ja) 2003-05-30 2010-07-07 キヤノン株式会社 固体撮像装置の製造方法
US8144227B2 (en) * 2004-09-02 2012-03-27 Sony Corporation Image pickup device and image pickup result outputting method
JP4277216B2 (ja) * 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
JP4979893B2 (ja) * 2005-03-23 2012-07-18 ソニー株式会社 物理量分布検知装置並びに物理情報取得方法および物理情報取得装置
TW200913238A (en) * 2007-06-04 2009-03-16 Sony Corp Optical member, solid state imaging apparatus, and manufacturing method
JP5820979B2 (ja) * 2008-12-26 2015-11-24 パナソニックＩｐマネジメント株式会社 固体撮像デバイス
JP5521721B2 (ja) * 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
CN102668081B (zh) * 2009-12-26 2016-02-03 佳能株式会社 固态图像拾取装置和图像拾取系统
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5953974B2 (ja) * 2011-09-15 2016-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
JP2013182943A (ja) * 2012-02-29 2013-09-12 Canon Inc 固体撮像装置の製造方法
JP2013197113A (ja) * 2012-03-15 2013-09-30 Sony Corp 固体撮像装置およびカメラシステム
TWI595637B (zh) * 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650476A (zh) * 2011-05-12 2014-03-19 橄榄医疗公司 对具有最小纵向互连的混合图像传感器使用堆叠方案的像素阵列区域最优化
CN103258831A (zh) * 2012-02-21 2013-08-21 索尼公司 固态成像器件及其制造方法以及相机系统
US20140035083A1 (en) * 2012-07-31 2014-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Elevated Photodiode with a Stacked Scheme

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CN110957339B (zh) 2024-02-13
KR102807159B1 (ko) 2025-05-14
KR20160145577A (ko) 2016-12-20
KR20230035463A (ko) 2023-03-13
US20170040371A1 (en) 2017-02-09
US10217785B2 (en) 2019-02-26
TWI667779B (zh) 2019-08-01
EP3565001A1 (en) 2019-11-06
TW201541622A (zh) 2015-11-01
EP3565001B1 (en) 2022-07-20
JP6245474B2 (ja) 2017-12-13
US10811454B2 (en) 2020-10-20
KR102678404B1 (ko) 2024-06-27
WO2015162867A1 (en) 2015-10-29
EP3134918B1 (en) 2019-06-19
US20240332336A1 (en) 2024-10-03
KR102383181B1 (ko) 2022-04-06
KR20220042251A (ko) 2022-04-04
JP2015216334A (ja) 2015-12-03
CN105940493A (zh) 2016-09-14
US20190189666A1 (en) 2019-06-20
CN110957339A (zh) 2020-04-03
US12046619B2 (en) 2024-07-23
KR20250069695A (ko) 2025-05-19
KR20240100469A (ko) 2024-07-01
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