CN105926036A - Polycrystalline silicon crystal growing furnace growth device and heat source adjusting method thereof - Google Patents
Polycrystalline silicon crystal growing furnace growth device and heat source adjusting method thereof Download PDFInfo
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- CN105926036A CN105926036A CN201610348843.XA CN201610348843A CN105926036A CN 105926036 A CN105926036 A CN 105926036A CN 201610348843 A CN201610348843 A CN 201610348843A CN 105926036 A CN105926036 A CN 105926036A
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- crystal growing
- growing furnace
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- power
- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to a polycrystalline silicon crystal growing furnace growth device and a heat source adjusting method thereof. The polycrystalline silicon crystal growing furnace growth device comprises a crystal growing furnace, wherein a top heating source and peripheral heating sources are arranged in the crystal growing furnace, the top heating source is connected with a power regulator I, and the peripheral heating sources are connected to a power regulator II. During heating, the power regulator I and the power regulator II change the power proportion of the top heating source and the peripheral heating source. On the one hand, the polycrystalline silicon crystal growing furnace growth device can effectively reduce invalid heat loss of a heater and reduce the total energy consumption of a system by utilizing a heat insulation plate; on the other hand, the external temperature of side baffles of a crucible is improved, and the internal radial temperature gradient of the crucible is reduced. In addition, the heat insulation plate rotates with vertical movement of a heat insulation cage. It is verified through calculation that a heat insulation effect is best when the heat insulation plate is placed horizontally and gradually becomes poor with increase of a horizontal included angle, and the requirement for later temperature gradient in the condensation process is met, so that crystal content heat stress caused by temperature difference is reduced while a temperature field meets the condensation parameter requirements.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon crystal growing furnace grower and thermal source control method thereof, belong to crystal growing furnace technical field.
Background technology
Solar-grade polysilicon directly influences the transformation efficiency of battery as the important carrier of solaode, the quality of its crystal.Orientation
Solidification (DSS) method polysilicon is compared with vertical pulling (CZ) method monocrystal silicon, and preparation technology is simple, cost is relatively low, becomes the most former of solar cell
Material.The more traditional crystal preparation process of directional solidification technique can suppress the generation of transverse grain boundaries, reduces the tissue defects such as crystal boundary, dislocation.
But, the thermograde in directional solidification furnace furnace chamber produces thermal stress in causing crystal, easily causes its internal dislocation density too high even
Crystal cleavage.In actual commercial production, by the technological parameter of control directional solidification to reduce in-furnace temperature gradient, and then preparation height
The polycrystalline silicon ingot casting of quality.
Conventional growth stove prioritization scheme emphasis improves growth furnace computer heating control and structure, has top heater and the structure of surrounding heater
In, the ratio adding heat is the most all set as 1:1, but, owing to top heater and surrounding heater are to the heating side of material in crucible
Formula is different, and action effect is the most different, is hardly formed that radial symmetry gradient is little, the uniform temperature field of axial-temperature gradient.Simultaneously because surrounding
Heater base heat dissipation capacity is relatively big, effectively utilizes less, is unfavorable for energy-conservation.Design at present and crucible bottom backplate has been added, to stop
A part of heat radiation, but owing to the heat conductivity of crucible bottom backplate is relatively large, therefore there is further room for improvement.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of polycrystalline silicon crystal growing furnace grower and thermal source control method thereof；
The technical scheme is that
A kind of polycrystalline silicon crystal growing furnace grower, including crystal growing furnace, is provided with top firing source and surrounding in described crystal growing furnace
Heating source, described top firing source connects power regulating eqiupment one, and described surrounding heating source connects power regulating eqiupment two.
Heating process, power regulating eqiupment one and power regulating eqiupment two change the power proportions in top firing source and surrounding heating source.
According to currently preferred, in described crystal growing furnace, also include that backplate at the bottom of heat-insulation cage, crucible, crucible, thermal insulation board, crucible side are protected
Plate, is provided with described heat-insulation cage in described crystal growing furnace, described heat-insulation cage top inner wall is fixed with described top firing source, described every
It is fixed with described surrounding heating source on hot cage surrounding inwall；
Being cased with crucible in described heat-insulation cage, described crucible lateral wall is provided with described crucible side guard plate, and described crucible outer bottom is provided with at the bottom of crucible
Backplate, is connected described thermal insulation board between the edge of backplate with the sidewall of described heat-insulation cage at the bottom of described crucible.
The advantage herein designed is, the setting of thermal insulation board, on the one hand, effectively reduce top firing source and the unavailable heat of surrounding heating source
Loss, reduces total power consumption, on the other hand, improves the temperature outside crucible side guard plate, reduces crucible inner radial temperature ladder
Degree.
According to currently preferred, described thermal insulation board connects the sidewall of described heat-insulation cage by rotary apparatus.
The advantage herein designed is, it is achieved that thermal insulation board rotates along with moving up and down of heat-insulation cage, through calculating checking, thermal insulation board water
During placing flat, effect of heat insulation is best, and along with the change with horizontal sextant angle is big, effect of heat insulation is gradually deteriorated, and meets condensation process latter temperature gradient
Requirement, make temperature field reduce the thermal stress that causes of the crystal endogenous cause of ill temperature difference while meeting condensation parameter request.
According to currently preferred, the heat conductivity of described thermal insulation board is identical with the heat conductivity of heat-insulation cage.
According to currently preferred, backplate at the bottom of described crucible has heat radiation platform.
The thermal source control method of above-mentioned crystal growing furnace grower, specifically refers to: in crystal growing process, along with crystal volume is with original
The continuous increase of the ratio of liquor capacity, the power in top firing source constantly diminishes with the ratio of the power of surrounding heating source, top firing source
The excursion of ratio of power of power and surrounding heating source be 1:4-1:1.
According to currently preferred, when the ratio of crystal volume with original solution volume is less than 1:2, the power in top firing source and surrounding
The span of the ratio of the power of heating source is (1:1)-(1:2)；When the ratio of crystal volume Yu original solution volume is 1:2,
The power in top firing source is (1:2)-(1:3) with the span of the ratio of the power of surrounding heating source；When crystal volume is molten with original
When the long-pending ratio of liquid is more than 1:2, the span of the power in top firing source and the ratio of the power of surrounding heating source be (1:3)-
(1:4)。
Invent and optimize the Temperature Distribution in crystal growing furnace by the control parameter changing heating power, add with conventional crystal growth furnace top
Thermal power is compared with the situation that the ratio of surrounding heating power is set to 1:1, and on the one hand the parameter of the present invention can effectively reduce crystal growing furnace
Interior radial symmetry gradient, on the other hand can form the crystal growth interface being slightly convex to solution, is formed with the solution stream that beneficially impurity is discharged
Dynamic, obtained crystal thermal stress is less.
The invention have the benefit that
1. the present invention optimizes the Temperature Distribution in crystal growing furnace, with conventional crystal growth furnace by the control parameter changing heating power
Top firing power is compared with the situation that the ratio of surrounding heating power is set to 1:1, and on the one hand the parameter of the present invention can effectively reduce crystal
Radial symmetry gradient in growth furnace, on the other hand can form the crystal growth interface being slightly convex to solution, is formed with what beneficially impurity was discharged
Solution flows, and obtained crystal thermal stress is less.
2. the present invention utilizes thermal insulation board on the one hand can effectively reduce the unavailable heat loss of heater, reduces system total power consumption, the opposing party
Face, improves the temperature outside crucible side shield, reduces crucible inner radial thermograde.And thermal insulation board moves up and down along with heat-insulation cage
And rotate, through calculating checking, during thermal insulation board horizontal positioned, effect of heat insulation is best, and along with the change with horizontal sextant angle is big, effect of heat insulation is gradually
It is deteriorated, meets the requirement of condensation process latter temperature gradient, make temperature field reduce crystal content because of the temperature difference while meeting condensation parameter request
The thermal stress caused.
Accompanying drawing explanation
Fig. 1 is the structural representation of crystal growing furnace grower described in embodiment 1.
Fig. 2 is the relative location drawing of heat-insulation cage, side heater and thermal insulation board in crystal growing process.
Fig. 3 is crystal growth interface figure in crystal growing furnace grower described in embodiment 1.
Fig. 4 is the crystal growth interface figure of crystal growing furnace grower described in comparative example 1.
Fig. 5 is the thermal stress figure in crystal growing furnace grower described in embodiment 1.
Fig. 6 is the thermal stress figure in crystal growing furnace grower described in comparative example 1.
1, crystal growing furnace；2, top heater；3, heat-insulation cage；4, side heater；5, crucible side guard plate；6, thermal insulation board；7、
Heat radiation platform；8, backplate at the bottom of crucible.
Detailed description of the invention
Below in conjunction with Figure of description and embodiment, the present invention is further qualified, but is not limited to this.
Embodiment 1
A kind of polycrystalline silicon crystal growing furnace grower, including crystal growing furnace 1, is provided with top heater 2 in described crystal growing furnace 1
And side heater 4, described top heater 2 connects power regulating eqiupment one, and described side heater 4 connects power regulating eqiupment two.
Heating process, power regulating eqiupment one and power regulating eqiupment two change the power proportions of top heater 2 and side heater 4.
Backplate 8 at the bottom of heat-insulation cage 3, crucible, crucible, thermal insulation board 6, crucible side guard plate 5, crystal growing furnace is also included in crystal growing furnace 1
It is provided with described heat-insulation cage 3 in 1, heat-insulation cage 3 top inner wall is fixed with top heater 2, heat-insulation cage 3 surrounding inwall is fixed setting
There is side heater 4；
Being cased with crucible in heat-insulation cage 3, crucible lateral wall is provided with crucible side guard plate 5, and crucible outer bottom is provided with backplate 8 at the bottom of crucible, crucible
Being connected thermal insulation board 6 between the edge of end backplate 8 and the sidewall of heat-insulation cage 3, backplate 8 at the bottom of described crucible has heat radiation platform 7.
On the one hand the advantage herein designed is, the setting of thermal insulation board 6, effectively reduces the invalid of top heater 2 and side heater 4
Heat loss, reduces total power consumption, through calculating, under conditions of Temperature Distribution is identical in crucible, adds the observable index after thermal insulation board 6
The energy consumption being not added with thermal insulation board 6 is low by about 4.3%, adds heat radiation platform 7 bottom temp temperature than the same position being not added with thermal insulation board 6 of thermal insulation board 6
Spend low about 30K.On the other hand, improve the temperature outside crucible side guard plate 5, reduce crucible inner radial thermograde, Jing Guoji
Calculating, the crystal growth later stage, in the middle of crucible, crystal block section adds the device radial temperature difference of thermal insulation board 6 is 2K, is not added with the radial direction of thermal insulation board 6
The temperature difference is 4K.
Thermal insulation board 6 connects the sidewall of heat-insulation cage 3 by rotary apparatus.Described rotary apparatus is common automatic control type rotating device, including
Support, rotary shaft, power input output mechanism, rotational speed control module.
The advantage herein designed is, it is achieved that thermal insulation board 6 rotates along with moving up and down of heat-insulation cage 3, through calculating checking, heat insulation
During plate 6 horizontal positioned, effect of heat insulation is best, and along with the change with horizontal sextant angle is big, effect of heat insulation is gradually deteriorated, and meets condensation process later stage temperature
The requirement of degree gradient, makes temperature field reduce, while meeting condensation parameter request, the thermal stress that the crystal endogenous cause of ill temperature difference causes.
The heat conductivity of thermal insulation board 6 is identical with the heat conductivity of heat-insulation cage 3.
Embodiment 2
The thermal source control method of polycrystalline silicon crystal growing furnace grower described in embodiment 1, specifically refers to: when crystal volume and original solution
When the ratio of volume is less than 1:2, the span of the ratio of the power of the power of top heater 2 and side heater 4 be (1:1)-
(1:2)；When the ratio of crystal volume Yu original solution volume is 1:2, the power of the power of top heater 2 and side heater 4
The span of ratio is (1:2)-(1:3)；When the ratio of crystal volume with original solution volume is more than 1:2, top heater 2
The span of ratio of power of power and side heater 4 be (1:3)-(1:4).
The present embodiment optimizes the Temperature Distribution in crystal growing furnace 1 by the control parameter changing heating power, on the one hand, can be effective
Reduce the radial symmetry gradient in crystal growing furnace 1, on the other hand, the crystal growth interface being slightly convex to solution can be formed, formed favourable
The solution discharged in impurity flows, and in crystal growing furnace grower described in the present embodiment, crystal growth interface figure is as shown in Figure 3.This enforcement
The crystal thermal stress that example obtains is less, and the thermal stress figure in crystal growing furnace grower described in the present embodiment is as shown in Figure 5.In Fig. 5,
The evenly heat stress of a-quadrant is 2.78e7N/m2；The evenly heat stress in B region is 1.85e7N/m2；The evenly heat stress in C region is
9.29e6N/m2；The evenly heat stress in D region is 7.57e6N/m2, in Fig. 5, whole thermal stress figure evenly heat stress is about 1*e7N/m2。
Comparative example 1
The thermal source control method of polycrystalline silicon crystal growing furnace grower described in embodiment 2, its difference is, top heater 2 power with
The ratio of side heater 4 power is not provided with thermal insulation board 6 in being set to 1:1, and described crystal growing furnace grower.
In crystal growing furnace grower described in this comparative example, crystal growth interface figure is as shown in Figure 4.Can be seen by Fig. 3 and Fig. 4 contrast
Going out, in the result of embodiment 2, solid liquid interface is raised to flow direction, and this solid liquid interface is more beneficial for the eliminating of impurity in crystal.
Thermal stress figure in crystal growing furnace grower described in this comparative example is as shown in Figure 6.In Fig. 6, the evenly heat stress in a region is
2.22e8N/m2；The evenly heat stress in b region is 1.58e8N/m2；The evenly heat stress in c region is 1.26e8N/m2；D region
Evenly heat stress is 9.41e7N/m2；In Fig. 6, whole thermal stress figure evenly heat stress is about 1*e8N/m2.Thermal stress.
By the contrast of Fig. 5 and Fig. 6, Fig. 5 evenly heat stress is about 1*e7N/m2, in Fig. 6, evenly heat stress is about 1*e8N/m2,
It will be seen that thermal stress is more uniform in Fig. 5, other operating condition is homogeneous while, the thermal stress of embodiment is numerically reduced to
10% originally.
Claims (7)
1. a polycrystalline silicon crystal growing furnace grower, it is characterised in that include crystal growing furnace, be provided with in described crystal growing furnace
Top firing source and surrounding heating source, described top firing source connects power regulating eqiupment one, and described surrounding heating source connects power regulating eqiupment two.
A kind of polycrystalline silicon crystal growing furnace grower the most according to claim 1, it is characterised in that in described crystal growing furnace
Also include backplate at the bottom of heat-insulation cage, crucible, crucible, thermal insulation board, crucible side guard plate, in described crystal growing furnace, be provided with described heat-insulation cage, institute
State and in heat-insulation cage top inner wall, be fixed with described top firing source, described heat-insulation cage surrounding inwall is fixed with described surrounding heating source；
Being cased with crucible in described heat-insulation cage, described crucible lateral wall is provided with described crucible side guard plate, and described crucible outer bottom is provided with at the bottom of crucible
Backplate, is connected described thermal insulation board between the edge of backplate with the sidewall of described heat-insulation cage at the bottom of described crucible.
A kind of polycrystalline silicon crystal growing furnace grower the most according to claim 2, it is characterised in that described thermal insulation board is by rotation
Rotary device connects the sidewall of described heat-insulation cage.
A kind of polycrystalline silicon crystal growing furnace grower the most according to claim 2, it is characterised in that the heat conduction of described thermal insulation board
Coefficient is identical with the heat conductivity of described heat-insulation cage.
5. according to the arbitrary described a kind of polycrystalline silicon crystal growing furnace grower of claim 2-4, it is characterised in that at the bottom of described crucible
Backplate has heat radiation platform.
6. the thermal source control method of the arbitrary described crystal growing furnace grower of claim 1-4, it is characterised in that specifically refer to:
In crystal growing process, along with the continuous increase of crystal volume with the ratio of original solution volume, the power in top firing source heats with surrounding
The ratio of the power in source constantly diminishes, the excursion of the ratio of the power of the power in top firing source and surrounding heating source be (1:4)-
(1:1)。
The thermal source control method of crystal growing furnace grower the most according to claim 6, it is characterised in that when crystal volume with
When the ratio of original solution volume is less than 1:2, the power in top firing source with the span of the ratio of the power of surrounding heating source is
(1:1)-(1:2)；When the ratio of crystal volume Yu original solution volume is 1:2, the power in top firing source and surrounding heating source
The span of the ratio of power is (1:2)-(1:3)；When the ratio of crystal volume with original solution volume is more than 1:2, top adds
The power of thermal source is (1:3)-(1:4) with the span of the ratio of the power of surrounding heating source.
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Cited By (1)
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| CN115584551A (en) * | 2022-12-05 | 2023-01-10 | 浙江晶盛机电股份有限公司 | Abnormity monitoring method for crystal growth furnace |
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Application publication date: 20160907 |