CN102888650A - Polycrystalline silicon ingot furnace crucible attemperator for maintaining solid-liquid interface to be horizontal - Google Patents
Polycrystalline silicon ingot furnace crucible attemperator for maintaining solid-liquid interface to be horizontal Download PDFInfo
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- CN102888650A CN102888650A CN2012104115999A CN201210411599A CN102888650A CN 102888650 A CN102888650 A CN 102888650A CN 2012104115999 A CN2012104115999 A CN 2012104115999A CN 201210411599 A CN201210411599 A CN 201210411599A CN 102888650 A CN102888650 A CN 102888650A
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Abstract
The invention discloses a polycrystalline silicon ingot furnace crucible attemperator for maintaining a solid-liquid interface to be horizontal. The attemperator mainly comprises a ceramic crucible, wherein a top thermal baffle, a side thermal isolation barrel and a bottom thermal baffle are coated outside the ceramic crucible; a graphite guard board is arranged on the side edge of the ceramic crucible; the graphite guard board closely clings to the ceramic crucible; the bottom of the ceramic crucible is provided with a thermal exchange platform which is arranged on a vertical column; the vertical column penetrates through the bottom thermal baffle so as to exert support and fixation effects; a side heater is arranged outside the graphite guard board; a top heater is arranged above the top of the ceramic crucible; a crucible cover plate is arranged on the top of the ceramic crucible; a crucible heat insulation board is between the graphite guard board and the side heater; the crucible heat insulation board closely clings to the graphite guard board; the crucible heat insulation board is fixed on a support frame; the support frame penetrates through the bottom thermal baffle to be connected with a motor; and the motor drives the crucible heat insulation board to move up and down through the support plate.
Description
Technical field
The present invention relates to the polysilicon ingot furnace thermal field apparatus field, especially a kind of crucible of polycrystalline silicon ingot furnace attemperator that keeps the solid-liquid interface level.
Background technology
Thermal field structure of polycrystalline silicon casting furnace commonly used as shown in Figure 1 at present; fixed top thermal baffle, Liftable type side heat insulation cylinder and the fixed heat insulating slab at bottom made by heat preservation carbon felt form heat-insulation cage; heat exchange platform is put on the interior column of heat-insulation cage, and the bottom of filling the ceramic crucible of silicon material reaches all around to be protected with graphite cake.In the silicon material fusion stage, the side heat insulation cylinder is down to zero-bit, the heat-insulation cage complete closed, by adding the hot device in side and top heater the silicon material in the crucible is heated until the silicon material melts fully, then enter crystal growth phase, by promoting the side heat insulation cylinder, heat is flowed out from the heat-insulation cage bottom, thereby reduce the thermal field bottom temp, obtain the required thermograde that reduces from the top down of crystal growth.
The weak point of this heat exchange method is: heat exchange platform is generally solid graphite body, thickness usually at 120mm between the 160mm, its heat-exchange capacity is very low, and ceramic crucible and plumbago crucible are all very thin, corresponding heat-sinking capability is higher than heat exchange platform, to such an extent as to need dispersed heat mainly to pass through sidewall of crucible all around and plumbago crucible to external diffusion during the crystal growth, this will cause near around the speed that reduces of the silicon melt temperature of crucible much larger than the silicon melt of crucible bottom, cause laterally existing thermograde, so that the solid-liquid interface in the crucible can't keep level, crystal can't vertically be grown from bottom to top, and crystal mass is relatively poor.
Summary of the invention
The objective of the invention is provides a kind of crucible of polycrystalline silicon ingot furnace attemperator that can effectively keep the solid-liquid interface level for the deficiency that solves above-mentioned technology.
In order to achieve the above object, the crucible of polycrystalline silicon ingot furnace attemperator of the maintenance solid-liquid interface level that the present invention is designed, it mainly comprises ceramic crucible, be provided with the top thermal baffle in the ceramic crucible outer wrap, side heat insulation cylinder and heat insulating slab at bottom, be provided with the graphite backplate at the ceramic crucible side, graphite backplate and ceramic crucible are close to setting, be provided with heat exchange platform in the ceramic crucible bottom, heat exchange platform is provided with on column, column passes heat insulating slab at bottom, rises and supports fixed action, is provided with side heater in the graphite backplate outside, be provided with top heater in the sky, ceramic crucible top, be provided with crucible cover plate at the ceramic crucible end face.
Described side heater is connected with top heater, and top heater is fixed on the thermal baffle of top.
As optimization, be provided with the crucible heat insulation plate between graphite backplate and side heater, crucible heat insulation plate and graphite backplate are close to setting, and the crucible heat insulation plate is fixed on the bracing frame, bracing frame passes heat insulating slab at bottom and is connected with electric motor, and electric motor drives the crucible heat insulation plate by back up pad and moves up and down.
When the crucible heat insulation plate was in the top, crucible heat insulation plate top and ceramic crucible bottom maintained an equal level.
The crucible of polycrystalline silicon ingot furnace attemperator of the resulting maintenance solid-liquid interface of the present invention level, when entering crystal growth phase, move up the crucible heat insulation plate to the top, this moment, warming plate was positioned at the plumbago crucible outside just, and from around be close to plumbago crucible, crucible is played good insulation effect.At this moment, promote the side heat insulation cylinder, silicon material in the crucible can only see through the downward dissipate heat of heat exchange platform by crucible bottom, and from the outflow of heat-insulation cage bottom, thereby reducing the thermal field bottom temp, i.e. the direction of heat conduction is from top to bottom, there is the thermograde that reduces from top to bottom in the inner molten silicon of crucible, the complete level of solid-liquid interface, crystal be from bottom to top growth vertically, obtains having the polycrystal silicon ingot of perfect crystal grain.
Description of drawings
Fig. 1 is the structural representation of existing ingot furnace crucible insulation apparatus;
Fig. 2 is the structural representation of ingot furnace crucible insulation apparatus of the present invention in the silicon material fusion stage;
Fig. 3 is that ingot furnace crucible insulation apparatus of the present invention is at the structural representation of vigilant growth phase.
Embodiment
The invention will be further described by reference to the accompanying drawings below by embodiment.
Embodiment 1:
Such as Fig. 2, shown in Figure 3, the crucible of polycrystalline silicon ingot furnace attemperator of the maintenance solid-liquid interface level that the present embodiment is described, it mainly comprises ceramic crucible 6, be provided with top thermal baffle 1 in ceramic crucible 6 outer wrap, side heat insulation cylinder 2 and heat insulating slab at bottom 3, be provided with graphite backplate 5 at ceramic crucible 6 sides, graphite backplate 5 is close to setting with ceramic crucible 6, be provided with heat exchange platform 7 in ceramic crucible 6 bottoms, heat exchange platform 7 is provided with on column 8, column 8 passes heat insulating slab at bottom 3, rises and supports fixed action, is provided with side heater 4 in graphite backplate 5 outsides, be provided with top heater 11 in the sky, ceramic crucible 6 top, be provided with crucible cover plate 12 at ceramic crucible 6 end faces.
Described side heater 4 is connected with top heater 11, and top heater 11 is fixed on the top thermal baffle 1.
Between graphite backplate 5 and side heater 4, be provided with crucible heat insulation plate 9, crucible heat insulation plate 9 is close to setting with graphite backplate 5, crucible heat insulation plate 9 is fixed on the bracing frame 10, bracing frame 10 passes heat insulating slab at bottom 3 and is connected with electric motor, and electric motor drives crucible heat insulation plate 9 by back up pad and moves up and down.When crucible heat insulation plate 9 was in the top, crucible heat insulation plate 9 tops and ceramic crucible 6 bottoms maintained an equal level.
Embodiment: the directional solidification method growing polycrystalline silicon ingot, during the fusing of silicon material, in the silicon material fusion stage, drive bracing frame 10 by drive-motor and move down crucible heat insulation plate 9 to ceramic crucible 6 belows, allow heat smoothly by 6 pairs of silicon material heating of ceramic crucible.When entering crystal growth phase, the crucible heat insulation plate 9 that moves up is to the top, and this moment, warming plate was positioned at ceramic crucible 6 outsides just, and from around be close to ceramic crucible 6, ceramic crucible 6 is played good insulation effect.At this moment, promote the side heat insulation cylinder, silicon material in the ceramic crucible 6 can only see through heat exchange platform 7 downward dissipate heat by ceramic crucible 6 bottoms, and from the outflow of heat-insulation cage bottom, thereby reducing the thermal field bottom temp, i.e. the direction of heat conduction is from top to bottom, there is the thermograde that reduces from top to bottom in ceramic crucible 6 inner molten silicon, the complete level of solid-liquid interface, crystal be from bottom to top growth vertically, obtains having the polycrystal silicon ingot of perfect crystal grain.After the crystal growth finishes, move down crucible heat insulation plate 9 to ceramic crucible 6, crystal ingot enters annealing and cooling stages.
Claims (4)
1. crucible of polycrystalline silicon ingot furnace attemperator that keeps the solid-liquid interface level, it mainly comprises ceramic crucible, it is characterized in that being provided with the top thermal baffle in the ceramic crucible outer wrap, side heat insulation cylinder and heat insulating slab at bottom, be provided with the graphite backplate at the ceramic crucible side, graphite backplate and ceramic crucible are close to setting, be provided with heat exchange platform in the ceramic crucible bottom, heat exchange platform is provided with on column, column passes heat insulating slab at bottom, rise and support fixed action, be provided with side heater in the graphite backplate outside, be provided with top heater in the sky, ceramic crucible top, be provided with crucible cover plate at the ceramic crucible end face.
2. the crucible of polycrystalline silicon ingot furnace attemperator of maintenance solid-liquid interface level according to claim 1 is characterized in that described side heater is connected with top heater, and top heater is fixed on the thermal baffle of top.
3. the crucible of polycrystalline silicon ingot furnace attemperator of maintenance solid-liquid interface level according to claim 1, it is characterized in that between graphite backplate and side heater, being provided with the crucible heat insulation plate, crucible heat insulation plate and graphite backplate are close to setting, the crucible heat insulation plate is fixed on the bracing frame, bracing frame passes heat insulating slab at bottom and is connected with electric motor, and electric motor drives the crucible heat insulation plate by back up pad and moves up and down.
4. the crucible of polycrystalline silicon ingot furnace attemperator of maintenance solid-liquid interface level according to claim 3 is characterized in that crucible heat insulation plate top is fair with the ceramic crucible bottom when the crucible heat insulation plate is in the below.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012104115999A CN102888650A (en) | 2012-10-24 | 2012-10-24 | Polycrystalline silicon ingot furnace crucible attemperator for maintaining solid-liquid interface to be horizontal |
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| CN2012104115999A CN102888650A (en) | 2012-10-24 | 2012-10-24 | Polycrystalline silicon ingot furnace crucible attemperator for maintaining solid-liquid interface to be horizontal |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243386A (en) * | 2013-05-23 | 2013-08-14 | 天津英利新能源有限公司 | Polysilicon ingot-casting furnace system |
| CN105586636A (en) * | 2016-02-18 | 2016-05-18 | 安徽旭能光伏电力有限公司 | Manufacturing technology for directional-solidification growth of polycrystalline silicon ingots used for solar cells |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN106567813A (en) * | 2016-10-09 | 2017-04-19 | 上海空间推进研究所 | Integral high-temperature heating device |
| CN112647122A (en) * | 2020-11-25 | 2021-04-13 | 浙江普智能源装备有限公司 | Thermal field structure and method for casting single crystal |
| CN115233288A (en) * | 2022-08-03 | 2022-10-25 | 北京铭镓半导体有限公司 | Method for fixing support platform of crucible for growing colored gem crystals by VGF (vacuum gradient freeze) method |
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| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| CN102644104A (en) * | 2011-06-15 | 2012-08-22 | 安阳市凤凰光伏科技有限公司 | Gradient improving device of thermal field for producing pseudo single crystal silicon ingot by casting method |
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2012
- 2012-10-24 CN CN2012104115999A patent/CN102888650A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| CN102644104A (en) * | 2011-06-15 | 2012-08-22 | 安阳市凤凰光伏科技有限公司 | Gradient improving device of thermal field for producing pseudo single crystal silicon ingot by casting method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243386A (en) * | 2013-05-23 | 2013-08-14 | 天津英利新能源有限公司 | Polysilicon ingot-casting furnace system |
| CN105586636A (en) * | 2016-02-18 | 2016-05-18 | 安徽旭能光伏电力有限公司 | Manufacturing technology for directional-solidification growth of polycrystalline silicon ingots used for solar cells |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN106567813A (en) * | 2016-10-09 | 2017-04-19 | 上海空间推进研究所 | Integral high-temperature heating device |
| CN112647122A (en) * | 2020-11-25 | 2021-04-13 | 浙江普智能源装备有限公司 | Thermal field structure and method for casting single crystal |
| CN112647122B (en) * | 2020-11-25 | 2022-05-24 | 浙江普智能源装备有限公司 | Thermal field structure and method for casting single crystal |
| CN115233288A (en) * | 2022-08-03 | 2022-10-25 | 北京铭镓半导体有限公司 | Method for fixing support platform of crucible for growing colored gem crystals by VGF (vacuum gradient freeze) method |
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