CN105892553B - 电源电压上电检测电路及其检测上电的实现方法 - Google Patents
电源电压上电检测电路及其检测上电的实现方法 Download PDFInfo
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- CN105892553B CN105892553B CN201610297935.XA CN201610297935A CN105892553B CN 105892553 B CN105892553 B CN 105892553B CN 201610297935 A CN201610297935 A CN 201610297935A CN 105892553 B CN105892553 B CN 105892553B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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CN201610297935.XA CN105892553B (zh) | 2016-05-06 | 2016-05-06 | 电源电压上电检测电路及其检测上电的实现方法 |
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Families Citing this family (18)
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CN106656160A (zh) * | 2016-09-20 | 2017-05-10 | 上海集成电路研发中心有限公司 | 一种高速电位转换电路 |
CN107885301A (zh) * | 2016-09-30 | 2018-04-06 | 上海华虹宏力半导体制造有限公司 | 上电复位电路 |
CN107493097B (zh) * | 2017-07-31 | 2020-02-07 | 天津大学 | 具有长复位时间的上电自复位电路 |
CN109194099A (zh) * | 2018-11-20 | 2019-01-11 | 广州市力驰微电子科技有限公司 | 一种高压启动电路的电源监测管理电路 |
CN111987754A (zh) * | 2019-05-24 | 2020-11-24 | 凹凸电子(武汉)有限公司 | 可移动设备以及对负载供电的控制方法 |
CN110320959B (zh) * | 2019-08-21 | 2020-11-06 | 上海南芯半导体科技有限公司 | 一种用于产生cmos阈值电压vth的电路与方法 |
CN110501556B (zh) * | 2019-08-27 | 2021-06-01 | 上海芯旺微电子技术有限公司 | 一种用于mcu的低温漂低压检测电路 |
CN110703010A (zh) * | 2019-09-25 | 2020-01-17 | 珠海亿智电子科技有限公司 | 测试电路 |
CN110989760B (zh) * | 2019-12-31 | 2022-04-01 | 思瑞浦微电子科技(苏州)股份有限公司 | 基于带隙基准电压的检测电路及带隙基准电压电路 |
CN113311211B (zh) * | 2020-02-26 | 2023-05-30 | 圣邦微电子(北京)股份有限公司 | 一种提高电源电压检测精准度的版图连接方法 |
CN111796626A (zh) * | 2020-08-29 | 2020-10-20 | 深圳市爱协生科技有限公司 | 一种多功能低压低功耗基准电路及其设计方法 |
CN111781984A (zh) * | 2020-08-29 | 2020-10-16 | 深圳市爱协生科技有限公司 | 一种por电路及其设计方法 |
CN112217500B (zh) * | 2020-12-03 | 2021-03-26 | 深圳英集芯科技有限公司 | 一种高精度低功耗的上电复位电路 |
CN113794472B (zh) * | 2021-08-30 | 2023-09-29 | 珠海亿智电子科技有限公司 | 上电检测电路、gpio接口电路及集成电路芯片 |
CN113608008B (zh) * | 2021-08-30 | 2024-04-26 | 深圳赫飞物联科技有限公司 | 一种电源电压检测电路及其应用 |
CN113884209B (zh) * | 2021-09-09 | 2023-10-10 | 芯原微电子(成都)有限公司 | 一种低功耗过温检测电路 |
CN114020083B (zh) * | 2021-10-26 | 2023-05-12 | 普冉半导体(上海)股份有限公司 | 一种电流源电路 |
CN114326907B (zh) * | 2022-01-12 | 2024-04-12 | 上海南芯半导体科技股份有限公司 | 一种新型的por电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2806783B2 (ja) * | 1994-02-28 | 1998-09-30 | 日本電気株式会社 | パワーオンリセット回路 |
US5523709A (en) * | 1994-11-30 | 1996-06-04 | Sgs-Thomson Microelectronics, Inc. | Power-on reset circuit and method |
CN102594312B (zh) * | 2012-03-04 | 2014-12-10 | 北京工业大学 | 一种新型的上电复位电路 |
CN103716023B (zh) * | 2013-12-03 | 2017-04-05 | 北京中电华大电子设计有限责任公司 | 一种超低功耗的上电复位电路 |
CN103633974A (zh) * | 2013-12-04 | 2014-03-12 | 安徽理工大学 | 一种具有固定阻容时间延迟特性的上电复位电路 |
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Address after: Zhangjiang Building 20A, 289 Chunxiao Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai Co-patentee after: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee after: Xinyuan Microelectronics (Shanghai) Co., Ltd. Co-patentee after: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee after: Core holdings limited company Address before: 201203 Zhangjiang Building 20A, 560 Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Co-patentee before: VeriSilicon Microelectronics (Beijing) Co., Ltd. Patentee before: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Co-patentee before: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Co-patentee before: VeriSilicon Holdings Co., Ltd. |