CN105870017A - 场效应晶体管的制造方法 - Google Patents
场效应晶体管的制造方法 Download PDFInfo
- Publication number
- CN105870017A CN105870017A CN201510032619.5A CN201510032619A CN105870017A CN 105870017 A CN105870017 A CN 105870017A CN 201510032619 A CN201510032619 A CN 201510032619A CN 105870017 A CN105870017 A CN 105870017A
- Authority
- CN
- China
- Prior art keywords
- effect transistor
- side wall
- field
- substrate
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 230000005669 field effect Effects 0.000 title claims abstract description 42
- 238000002347 injection Methods 0.000 claims abstract description 30
- 239000007924 injection Substances 0.000 claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 24
- 239000007943 implant Substances 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 10
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 59
- 239000012535 impurity Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- ALKWEXBKAHPJAQ-NAKRPEOUSA-N Asn-Leu-Asp-Asp Chemical group NC(=O)C[C@H](N)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC(O)=O)C(O)=O ALKWEXBKAHPJAQ-NAKRPEOUSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510032619.5A CN105870017A (zh) | 2015-01-22 | 2015-01-22 | 场效应晶体管的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510032619.5A CN105870017A (zh) | 2015-01-22 | 2015-01-22 | 场效应晶体管的制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105870017A true CN105870017A (zh) | 2016-08-17 |
Family
ID=56623498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510032619.5A Pending CN105870017A (zh) | 2015-01-22 | 2015-01-22 | 场效应晶体管的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105870017A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113937005A (zh) * | 2021-12-16 | 2022-01-14 | 广州粤芯半导体技术有限公司 | 金属氧化物半导体晶体管的制造方法 |
WO2023284287A1 (zh) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100145A (en) * | 1998-11-05 | 2000-08-08 | Advanced Micro Devices, Inc. | Silicidation with silicon buffer layer and silicon spacers |
US6312998B1 (en) * | 2000-10-16 | 2001-11-06 | Advanced Micro Devices, Inc. | Field effect transistor with spacers that are removable with preservation of the gate dielectric |
US20040094805A1 (en) * | 2001-12-19 | 2004-05-20 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20070145432A1 (en) * | 2005-12-27 | 2007-06-28 | Tae Woo Kim | Semiconductor device |
CN102856259A (zh) * | 2011-07-01 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
-
2015
- 2015-01-22 CN CN201510032619.5A patent/CN105870017A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100145A (en) * | 1998-11-05 | 2000-08-08 | Advanced Micro Devices, Inc. | Silicidation with silicon buffer layer and silicon spacers |
US6312998B1 (en) * | 2000-10-16 | 2001-11-06 | Advanced Micro Devices, Inc. | Field effect transistor with spacers that are removable with preservation of the gate dielectric |
US20040094805A1 (en) * | 2001-12-19 | 2004-05-20 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20070145432A1 (en) * | 2005-12-27 | 2007-06-28 | Tae Woo Kim | Semiconductor device |
CN102856259A (zh) * | 2011-07-01 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023284287A1 (zh) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
CN113937005A (zh) * | 2021-12-16 | 2022-01-14 | 广州粤芯半导体技术有限公司 | 金属氧化物半导体晶体管的制造方法 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170519 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi CSMC Semiconductor Co., Ltd. Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160817 |