CN105824162B - 阵列基板及其制作方法、显示装置 - Google Patents

阵列基板及其制作方法、显示装置 Download PDF

Info

Publication number
CN105824162B
CN105824162B CN201610382094.2A CN201610382094A CN105824162B CN 105824162 B CN105824162 B CN 105824162B CN 201610382094 A CN201610382094 A CN 201610382094A CN 105824162 B CN105824162 B CN 105824162B
Authority
CN
China
Prior art keywords
array substrate
insulating layer
conductive structure
display area
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610382094.2A
Other languages
English (en)
Other versions
CN105824162A (zh
Inventor
李东朝
李京鹏
李建
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201610382094.2A priority Critical patent/CN105824162B/zh
Publication of CN105824162A publication Critical patent/CN105824162A/zh
Priority to US15/551,525 priority patent/US10388673B2/en
Priority to PCT/CN2017/079210 priority patent/WO2017206588A1/zh
Application granted granted Critical
Publication of CN105824162B publication Critical patent/CN105824162B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133784Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by rubbing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明涉及显示技术领域,公开了一种阵列基板及其制作方法、显示装置。所述阵列基板包括绝缘层和位于非显示区域的导电结构,所述绝缘层包括至少一个位于非显示区域的开口,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内,使得所述导电结构的表面低于所述绝缘层的表面,从而在取向膜的摩擦取向过程中,摩擦布不与导电材料接触,与摩擦布接触的均为绝缘材料,高速摩擦产生的静电不存在差异,进而对摩擦布的布毛的影响不存在差异,保证摩擦取向质量,提高画面品质。

Description

阵列基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域,特别是涉及一种阵列基板及其制作方法、显示装置。
背景技术
目前,薄膜晶体管液晶显示器(TFT-LCD)已成为主流的显示产品,其显示品质随制造工艺技术的进步而不断优化,随着对产品品质要求的不断提高,继而对制作工艺的要求也越来越高。
TFT-LCD的主体结构为液晶显示面板,液晶显示面板包括对盒的阵列基板和彩膜基板,以及填充在阵列基板和彩膜基板之间的液晶。阵列基板的非显示区域包括端子区域,所述端子区域包括多个端子,每一端子包括裸露在外的透明导电层,用于与驱动芯片的引脚连接,为显示区域提供显示所需的信号。
为了使液晶分子能够正确地取向,会在阵列基板和彩膜基板显示区域的内侧表面涂上一层取向膜,并通过摩擦取向工艺在取向膜上形成取向沟槽,为液晶分子提供一定的预倾角。
阵列基板除了显示区域裸露在外取向膜外,还包括非显示区域的保护层10'和端子1',结合图1和图2所示,保护层10'是绝缘材料,而端子1'是导电材料,因此在高速摩擦时产生的静电有所差异,因此,对摩擦布的布毛的影响存在差异,将会导致布毛紊乱,造成保护层10'和端子1'相接处的布毛方向不一致,直接造成摩擦不良,影响画面品质。
发明内容
本发明提供一种阵列基板及其制作方法、显示装置,用以解决因静电差异导致的取向膜摩擦取向不良问题。
为解决上述技术问题,本发明实施例中提供一种阵列基板,包括显示区域和位于显示区域外围的非显示区域,所述阵列基板包括绝缘层,所述绝缘层包括至少一个位于所述非显示区域的开口,所述非显示区域包括至少一个导电结构,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内。
如上所述的阵列基板,优选的是,所述导电结构由透明导电材料制得。
如上所述的阵列基板,优选的是,所述阵列基板还包括栅线和数据线,用于限定多个像素区域;
所述阵列基板的非显示区域还包括与所述栅线同层的第一金属线和与所述数据线同层的第二金属线,所述第一金属线和所述第二金属线一一对应且电性连接;
所述第一金属线和第二金属线与所述导电结构一一对应且电性连接。
如上所述的阵列基板,优选的是,所述阵列基板还包括栅线和数据线,用于限定多个像素区域;
所述阵列基板的非显示区域还包括与所述栅线同层的第一金属线,所述第一金属线与所述导电结构一一对应且电性连接。
如上所述的阵列基板,优选的是,所述阵列基板还包括栅线和数据线,用于限定多个像素区域;
所述阵列基板的非显示区域还包括与所述数据线同层的第二金属线,所述第二金属线与所述导电结构一一对应且电性连接。
本发明实施例中还提供一种显示装置,包括如上所述的阵列基板。
本发明实施例中还提供如上所述的阵列基板的制作方法,所述阵列基板包括显示区域和位于显示区域外围的非显示区域,所述制作方法包括:
形成绝缘层;
在所述绝缘层中形成至少一个位于所述非显示区域的开口;
在所述非显示区域形成至少一个导电结构,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内。
如上所述的制作方法,优选的是,所述制作方法具体包括:
形成所述绝缘层;
在所述绝缘层中形成所述开口;
在所述开口内形成所述导电结构。
如上所述的制作方法,优选的是,所述制作方法具体包括:
形成所述导电结构;
在所述导电结构上形成所述绝缘层;
在所述绝缘层中形成所述开口。
如上所述的制作方法,优选的是,利用透明导电材料形成所述导电结构。
本发明的上述技术方案的有益效果如下:
上述技术方案中,所述阵列基板包括绝缘层和位于非显示区域的导电结构,所述绝缘层包括至少一个位于非显示区域的开口,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内,使得所述导电结构的表面低于所述绝缘层的表面,从而在取向膜的摩擦取向过程中,摩擦布不与导电材料接触,与摩擦布接触的均为绝缘材料,高速摩擦产生的静电不存在差异,进而对摩擦布的布毛的影响不存在差异,保证摩擦取向质量,提高画面品质。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1表示现有技术中阵列基板的端子区域的局部剖视图;
图2表示现有技术中阵列基板的端子区域的局部俯视图;
图3表示本发明实施例中阵列基板的局部剖视图一;
图4表示本发明实施例中阵列基板的局部剖视图二;
图5表示本发明实施例中阵列基板的局部剖视图三;
图6表示本发明实施例中阵列基板的局部剖视图四;
图7表示现有技术中阵列基板的端子区域的局部俯视图。
具体实施方式
下面将结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例一
结合图3-图6所示,本实施例中提供一种阵列基板,包括显示区域和位于显示区域外围的非显示区域,所述非显示区域包括设置在基底100上的至少一个导电结构1,所述导电结构通常由透明导电材料制得,因为相对于金属材料,透明导电材料不易被氧化。其中,导电结构1可以与像素电极或公共电极同层制作,以简化制作工艺,降低成本。
所述阵列基板还包括设置在基底100上的绝缘层11,绝缘层11包括至少一个位于非显示区域的开口12,开口12与导电结构1的位置一一对应,导电结构1位于开口12内,使得导电结构1远离基底100的表面相对于绝缘层11远离基底100的表面更靠近基底100。
上述阵列基板,导电结构1位于开口12内,使得导电结构1远离基底100的表面相对于绝缘层11远离基底100的表面更靠近基底100,即,导电结构1的表面低于绝缘层11的表面,从而在取向膜的摩擦取向过程中,摩擦布不与导电材料接触,与摩擦布接触的均为绝缘材料,高速摩擦产生的静电不存在差异,进而对摩擦布的布毛的影响不存在差异,保证摩擦取向质量,提高画面品质。
所述阵列基板还包括位于显示区域的各显示膜层结构,如:栅线、数据线、像素电极等。其中,所述栅线和数据线用于限定多个像素区域,每一像素区域包括所述像素电极,所述像素电极与公共电极之间形成驱动液晶分子偏转的电场。所述取向膜用于对液晶分子进行取向,使液晶分子规则排列。所述公共电极可以设置在阵列基板上,也可以设置在彩膜基板上。当所述公共电极设置在阵列基板上时,导电结构1可以与所述公共电极同层制作;当所述公共电极设置在彩膜基板上时,导电结构1可以与所述像素电极同层制作,以简化制作工艺。另外,导电结构1由透明导电材料制得,暴露在外,不易被氧化。
为了降低传输电阻,本实施例中,所述阵列基板的非显示区域还包括与所述栅线同层的第一金属线2和/或与所述数据线同层的第二金属线3,用于传输信号。图3和图5中示意的阵列基板,所述阵列基板的非显示区域包括第一金属线2和第二金属线3,第一金属线2和第二金属线3的位置一一对应且电性连接,第一金属线2与第二金属线3之间具有绝缘层10,第一金属线2和第二金属线3具体通过绝缘层10中的过孔电性连接。导电结构1与第一金属线2和第二金属线3一一对应且电性连接。图4和图6中示意的阵列基板,所述阵列基板的非显示区域仅包括第一金属线2,所述阵列基板的非显示区域也可以仅包括第二金属线,导电结构与第二金属线一一对应且电性连接,与图4和图6类似,不再示意。由于栅线和数据线由金属材料制得,如:Cu,Al,Ag,Mo,Cr,Nd,Ni,Mn,Ti,Ta,W等金属以及这些金属的合金,具有较小的传输电阻,降低功耗。
本发明的技术方案通过设置绝缘层11,导电结构1位于开口12内,以克服静电差异导致的摩擦取向不良问题。具体的实现结构可以为:在绝缘层11中形成开口12后,在开口12内形成透明导电材料,由所述透明导电材料形成导电结构1,即,导电结构1填充在开口12内,且导电结构1的表面低于绝缘层11的表面,参见图3和图4所示。也可以在形成导电结构1后,再形成覆盖导电结构1的绝缘层11,然后在绝缘层11上开设开口12,露出导电结构1,即,绝缘层11设置在导电结构1上,参见图5和图6所示。
需要说明的是,本发明的技术方案适用于非显示区域的所有需要暴露在外的导电结构,例如:与集成芯片、柔性电路板连接的导电结构,导电结构1与集成芯片或柔性电路板的引脚位置一一对应。由于导电结构1位于绝缘层11的开口12内,为了方便集成芯片和柔性电路板的安装,可以在绝缘层11上形成凹槽20,如图7所示,凹槽20与集成芯片和柔性电路板的形状配合,凹槽20与多个开口12位于同侧的一端连通,将集成芯片和柔性电路板放置在凹槽20内时,其引脚插入对应的开口12内,与导电结构1贴合,实现集成芯片和柔性电路板的安装。
本实施例中还提供一种显示装置,包括上述的阵列基板,以提高取向膜的摩擦取向质量,提高显示品质。
所述显示装置具体可以为:液晶显示面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
实施例二
本实施例中提供一种实施例一中的阵列基板的制作方法,所述阵列基板包括显示区域和位于显示区域外围的非显示区域,所述制作方法包括:
形成绝缘层;
在所述绝缘层中形成至少一个位于非显示区域的开口,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内。
通过上述步骤形成的阵列基板,其导电结构位于绝缘层的开口内,从而在取向膜的摩擦取向过程中,摩擦布不与导电材料接触,与摩擦布接触的均为绝缘材料,高速摩擦产生的静电不存在差异,进而对摩擦布的布毛的影响不存在差异,保证摩擦取向质量,提高画面品质。
为了实现上述目的,在对取向膜进行摩擦取向之前形成所述绝缘层。具体可以在对取向膜进行摩擦之前形成所述开口,或在对取向膜进行摩擦之后形成所述开口。
可选的,利用透明导电材料(如:铟锌氧化物、铟锡氧化物)形成所述导电结构,以提高导电结构的抗氧化性。进一步地,当公共电极设置在阵列基板上时,通过对同一透明导电层的构图工艺形成所述导电结构和所述公共电极;当所述公共电极设置在彩膜基板上时,通过对同一透明导电层的构图工艺形成所述导电结构和所述像素电极,以简化制作工艺。
在一个具体的实施方式中,结合图3和图4所示,所述阵列基板的制作方法具体包括:
形成绝缘层11;
在绝缘层11中形成开口12;
在开口12内形成导电结构1。
上述步骤首先形成绝缘层,并在绝缘层中形成开口,然后在所述开口中填充导电材料,形成所述导电结构,并保证所述导电结构远离基底100的表面相对于绝缘层11远离基底100的表面更靠近基底100,即,导电结构1的表面低于绝缘层11的表面,从而在对取向膜进行摩擦取向时,摩擦布不与所述导电结构接触,克服了静电差异造成的摩擦不良问题。
在另一个具体的实施方式中,结合图5和图6所示,所述阵列基板的制作方法具体包括:
形成导电结构1;
在导电结构1上形成绝缘层11;
在绝缘层11中形成开口12,开口12与导电结构1的位置一一对应,暴露出对应导电结构1。
上述步骤首先形成所述导电结构,然后再形成绝缘层,并在所述绝缘层中形成开口,暴露出所述导电结构,由于导电结构的表面低于绝缘层的表面,从而在对取向膜进行摩擦取向时,摩擦布不与所述导电结构接触,克服了静电差异造成的摩擦不良问题。
上面两个具体实施方式形成的导电结构暴露在外,并且由于绝缘层的作用,在对取向膜进行摩擦取向的过程中,摩擦布不与所述导电结构接触,克服了因静电差异导致的摩擦取向不良问题。可选的,在对取向膜进行摩擦之前形成所述开口,防止形成所述开口的制作工艺影响取向膜的取向作用。另外,在第一个具体实施方式中,形成所述导电结构时,缺省了掩膜板,降低了生产成本。
应当理解,本说明书所描述的多个实施例仅用于说明和解释本发明,并不用于限定本发明。并且在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和替换,这些改进和替换也应视为本发明的保护范围。

Claims (6)

1.一种阵列基板,包括显示区域和位于显示区域外围的非显示区域,其特征在于,所述阵列基板包括绝缘层,所述绝缘层包括至少一个位于所述非显示区域的开口,所述非显示区域包括至少一个导电结构,所述开口与所述导电结构的位置一一对应,所述导电结构位于所述开口内,所述导电结构与所述开口的侧壁直接接触;
所述阵列基板还包括栅线和数据线,用于限定多个像素区域;
所述阵列基板的非显示区域还包括与所述栅线同层的第一金属线,所述第一金属线与所述导电结构一一对应且电性连接;或者,
所述阵列基板的非显示区域还包括与所述数据线同层的第二金属线,所述第二金属线与所述导电结构一一对应且电性连接。
2.根据权利要求1所述的阵列基板,其特征在于,所述导电结构为透明导电材料。
3.一种显示装置,其特征在于,包括权利要求1-2任一项所述的阵列基板。
4.一种权利要求1-2任一项所述的阵列基板的制作方法,所述阵列基板包括显示区域和位于显示区域外围的非显示区域,所述制作方法包括:
形成绝缘层;
在所述绝缘层中形成至少一个开口;
在所述非显示区域形成至少一个导电结构,所述开口与所述导电结构的位置一一对应,所述导电结构的位于所述开口内,所述导电结构与所述开口的侧壁直接接触。
5.根据权利要求4所述的制作方法,其特征在于,所述制作方法具体包括:
形成所述绝缘层;
在所述绝缘层中形成所述开口;
在所述开口内形成所述导电结构。
6.根据权利要求4所述的制作方法,其特征在于,利用透明导电材料形成所述导电结构。
CN201610382094.2A 2016-06-01 2016-06-01 阵列基板及其制作方法、显示装置 Active CN105824162B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610382094.2A CN105824162B (zh) 2016-06-01 2016-06-01 阵列基板及其制作方法、显示装置
US15/551,525 US10388673B2 (en) 2016-06-01 2017-04-01 Array substrate, method for manufacturing the same and display device including the array substrate
PCT/CN2017/079210 WO2017206588A1 (zh) 2016-06-01 2017-04-01 阵列基板及其制作方法、显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610382094.2A CN105824162B (zh) 2016-06-01 2016-06-01 阵列基板及其制作方法、显示装置

Publications (2)

Publication Number Publication Date
CN105824162A CN105824162A (zh) 2016-08-03
CN105824162B true CN105824162B (zh) 2020-09-01

Family

ID=56531868

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610382094.2A Active CN105824162B (zh) 2016-06-01 2016-06-01 阵列基板及其制作方法、显示装置

Country Status (3)

Country Link
US (1) US10388673B2 (zh)
CN (1) CN105824162B (zh)
WO (1) WO2017206588A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105824162B (zh) 2016-06-01 2020-09-01 北京京东方光电科技有限公司 阵列基板及其制作方法、显示装置
CN114384731A (zh) * 2021-12-29 2022-04-22 重庆惠科金渝光电科技有限公司 阵列基板及液晶显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020065690A (ko) * 2001-02-07 2002-08-14 삼성전자 주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
CN101257049A (zh) * 2008-04-07 2008-09-03 友达光电股份有限公司 薄膜晶体管、主动阵列基板及其制造方法
KR20090131245A (ko) * 2008-06-17 2009-12-28 소니 가부시끼 가이샤 표시 장치 및 그 제조 방법, 및 반도체 장치 및 그 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4517063B2 (ja) * 2003-05-27 2010-08-04 日本電気株式会社 液晶表示装置
JP4082413B2 (ja) 2005-02-07 2008-04-30 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
CN101919043B (zh) * 2008-01-21 2013-06-05 金振有限公司 显示装置
CN202523709U (zh) * 2012-04-28 2012-11-07 北京京东方光电科技有限公司 一种阵列基板和显示装置
CN202794786U (zh) * 2012-07-20 2013-03-13 北京京东方光电科技有限公司 一种阵列基板及显示装置
CN203084394U (zh) * 2013-02-20 2013-07-24 北京京东方光电科技有限公司 一种阵列基板及液晶显示装置
KR20140137922A (ko) * 2013-05-24 2014-12-03 삼성디스플레이 주식회사 어레이 기판 및 이의 제조방법
CN104570493B (zh) * 2015-01-22 2017-10-31 合肥京东方光电科技有限公司 一种阵列基板母板及其制作方法、静电消除设备
CN105206624B (zh) * 2015-10-22 2018-06-05 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和显示装置
CN105824162B (zh) * 2016-06-01 2020-09-01 北京京东方光电科技有限公司 阵列基板及其制作方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020065690A (ko) * 2001-02-07 2002-08-14 삼성전자 주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
CN101257049A (zh) * 2008-04-07 2008-09-03 友达光电股份有限公司 薄膜晶体管、主动阵列基板及其制造方法
KR20090131245A (ko) * 2008-06-17 2009-12-28 소니 가부시끼 가이샤 표시 장치 및 그 제조 방법, 및 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
CN105824162A (zh) 2016-08-03
US10388673B2 (en) 2019-08-20
US20190088682A1 (en) 2019-03-21
WO2017206588A1 (zh) 2017-12-07

Similar Documents

Publication Publication Date Title
CN102116974B (zh) 液晶显示器
WO2018010445A1 (zh) 液晶显示面板及其制作方法以及显示装置
TWI497161B (zh) 具有彎曲非作用邊緣區域的顯示器
CN104617106B (zh) 一种阵列基板及显示装置
WO2019061683A1 (zh) 内嵌式触控面板
US11513401B2 (en) Liquid crystal display module and display device having contact surface disposed obliquely to any side surface of array substrate
CN202693965U (zh) 一种阵列基板及显示装置
CN107065287B (zh) 一种显示面板和显示装置
US10088724B2 (en) Display panel and displaying device
WO2019000912A1 (zh) 显示面板及其制造方法、显示装置
EP2434338A2 (en) Liquid crystal display device, substrate producing method
CN104849921B (zh) 液晶显示装置
US9412767B2 (en) Liquid crystal display device and method of manufacturing a liquid crystal display device
US9915842B2 (en) Display panel, method of manufacturing the same and display device
US10120255B2 (en) Display device
EP3333624A1 (en) Electrical connection structure, array substrate and display device
CN106940502B (zh) 一种液晶显示面板及显示装置
CN103534643B (zh) 液晶显示装置以及其制造方法
JP5936839B2 (ja) アレイ基板およびその製造方法、並びに液晶ディスプレー
CN113721398A (zh) 显示装置及电子设备
JPWO2013129200A1 (ja) 液晶表示装置
CN105824162B (zh) 阵列基板及其制作方法、显示装置
WO2020140688A1 (zh) 阵列基板及显示装置
US11428996B2 (en) Display device
JP2013218126A (ja) 表示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant