WO2020140688A1 - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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Publication number
WO2020140688A1
WO2020140688A1 PCT/CN2019/123401 CN2019123401W WO2020140688A1 WO 2020140688 A1 WO2020140688 A1 WO 2020140688A1 CN 2019123401 W CN2019123401 W CN 2019123401W WO 2020140688 A1 WO2020140688 A1 WO 2020140688A1
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Prior art keywords
peripheral
shielding layer
array substrate
substrate
layer
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PCT/CN2019/123401
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English (en)
French (fr)
Inventor
龙春平
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/765,276 priority Critical patent/US11112666B2/en
Publication of WO2020140688A1 publication Critical patent/WO2020140688A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive
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    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • the invention relates to the field of display technology, in particular to an array substrate and a display device.
  • an alignment layer needs to be made so that the liquid crystal can have an initial deflection angle, for example, polyimide is used as the material of the alignment layer, because polyimide has fluidity before being cured Yes, so some design is needed to control the boundary of the polyimide liquid coating.
  • a substrate, the substrate is divided into a display area and a peripheral wiring area located outside the display area of the substrate;
  • the peripheral wiring is located in the peripheral wiring area
  • An insulating layer located on a side of the peripheral trace facing away from the substrate, the insulating layer has a plurality of grooves surrounding the display area, and the insulating layer and the groove between the grooves form a retaining wall structure , The extending direction of the groove crosses the peripheral wiring, and there is an overlapping area between the groove and the peripheral wiring;
  • a conductive shielding layer is located on a side of the insulating layer facing away from the substrate, and an overlapping area of the peripheral trace and the groove is covered by an orthographic projection of the conductive shielding layer on the substrate.
  • the conductive shielding layer includes a plurality of strip-shaped shield electrodes corresponding one-to-one with the peripheral traces, and one of the strips
  • the orthographic projection of the shield electrode on the substrate covers the corresponding orthographic projection of the corresponding one of the peripheral traces passing through the retaining wall structure on the substrate.
  • the conductive shield electrode includes at least one block shield electrode, and an orthographic projection of the block shield electrode on the substrate An orthographic projection on the substrate of a portion covering multiple peripheral traces passing through the retaining wall structure.
  • the peripheral traces include data line leads.
  • the peripheral wiring includes a common electrode lead; each of the common electrode leads includes a plurality of parallel sub-leads, and the parallel positions of the sub-leads and the retaining wall structure The orthographic projections on the substrate do not overlap each other.
  • the conductive shielding layer includes a plurality of sub-strip shield electrodes corresponding to the sub-leads, and one of the sub-strip shield electrodes is on the substrate
  • the orthographic projection covers the orthographic projection of the corresponding one of the sub-leads on the substrate.
  • the array substrate provided by the present invention further includes: a metal shielding layer between the substrate and the peripheral wiring, the metal shielding layer and the peripheral wiring are insulated from each other, and the The overlapping area of the peripheral trace and the groove is covered by the orthographic projection of the metal shielding layer on the substrate.
  • the metal shielding layer and the conductive shielding layer are electrically connected through a via, and the via is provided in an insulating layer outside the groove.
  • the metal shielding layer includes a plurality of strip-shaped metal electrodes corresponding one-to-one with the peripheral traces, and one of the strips
  • the orthographic projection of the metal electrode on the substrate covers a corresponding orthographic projection of the portion of the peripheral trace passing through the retaining wall structure on the substrate.
  • the metal shield electrode includes at least one bulk metal electrode, and an orthographic projection of the bulk metal electrode on the substrate An orthographic projection on the substrate of a portion covering multiple peripheral traces passing through the retaining wall structure.
  • the patterns of the conductive shielding layer and the metal shielding layer are only provided in the area where the peripheral wiring passes through the retaining wall structure, or the metal shielding
  • the layer has a pattern that blocks the fan-out area of the peripheral traces.
  • the insulating layer includes:
  • a flattening layer on a side of the passivation layer facing away from the peripheral wiring, and the blocking wall structure is formed only on the flattening layer.
  • the material of the conductive shielding layer is indium tin oxide, and the conductive shielding layer is located on the side of the planarization layer facing away from the substrate.
  • the array substrate provided by the present invention further includes a pixel electrode located in the display area, and the conductive shielding layer is prepared in the same layer as the pixel electrode.
  • the material of the conductive shielding layer is metal, and the conductive shielding layer is located between the planarization layer and the passivation layer.
  • the array substrate provided by the present invention further includes touch electrode leads, and the conductive shielding layer is prepared in the same layer as the touch electrode leads.
  • the array substrate provided by the present invention further includes a metal pixel electrode, and the conductive shielding layer is prepared in the same layer as the metal pixel electrode.
  • the invention also provides a display device comprising the above array substrate provided by the invention.
  • FIG. 1 is a plan view of an array substrate provided by an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a pixel thin film transistor in an array substrate provided by an embodiment of the present invention
  • FIG. 3 is a cross-sectional view along the aa direction in FIG. 1;
  • FIG. 4 is a cross-sectional view along the bb direction in FIG. 1;
  • FIG. 5 is a cross-sectional view along the cc direction in FIG. 1;
  • FIG. 6 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 7 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view along the dd direction in FIG. 7;
  • FIG. 9 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 10 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 11 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 12 is a cross-sectional view along the ee direction in FIG. 11;
  • FIG. 13 is a cross-sectional view along the ff direction in FIG. 11;
  • FIG. 14 is a plan view of another array substrate provided by an embodiment of the present invention.
  • FIG. 15 is a cross-sectional view of another pixel thin film transistor in an array substrate provided by an embodiment of the present invention.
  • FIG. 16 is a cross-sectional view along the gg direction in FIG. 14;
  • 17 is a top view of an array substrate provided by an embodiment of the present invention.
  • the retaining wall structure On the array substrate of the liquid crystal display, the retaining wall structure is arranged on the four sides within the frame sealant of the non-display area, and the retaining wall structure is composed of a slotted planarization layer.
  • the polyimide liquid of the alignment film flows into the groove of the retaining wall structure.
  • the retaining wall structure of the alignment film has a wavy design, and the flow of the polyimide liquid toward the retaining wall structure will follow the convex and concave portions The arc-shaped edges between them flow to buffer the force acting between the polyimide liquid and the retaining wall structure, so that the polyimide liquid cannot cross the retaining wall structure, thereby realizing the control of the boundary coated by the polyimide liquid.
  • the source-drain metal layer traces that is, the passivation layer around the periphery traces are only protected by about 0.2 microns, and the following two problems are prone to occur: (1) In the orientation process Friction electrostatic damage is more likely to occur here; (2) Peripheral traces here are more likely to absorb impurity ions of the liquid crystal layer, resulting in uneven local brightness of the display and causing various traces.
  • an array substrate provided by the present invention includes:
  • the substrate 10 is provided with a display area A and a peripheral wiring area B provided outside the display area A of the substrate 10.
  • FIG. 1 only shows the peripheral wiring area B;
  • Peripheral trace 81 located in the peripheral trace area B;
  • the insulating layer 100 on the side of the peripheral trace 81 facing away from the substrate 10 has a plurality of grooves 101 surrounding the display area.
  • the insulating layer 100 and the groove 101 between the grooves 101 form a retaining wall structure 102.
  • the extending direction of 101 intersects with the peripheral wiring 81, and there is an overlapping area between the groove 101 and the peripheral wiring 81; in FIG. 1, the extending direction of the groove 101 is the horizontal direction, and the extending direction of the peripheral wiring 81 is the vertical direction Take an example for explanation;
  • the array substrate includes a substrate 10, the substrate 10 is provided with a display area and a peripheral wiring area, and a peripheral wiring 81 is provided in the peripheral wiring area, and the array substrate further includes a peripheral wiring disposed away from the substrate 10
  • the insulating layer 100 has a plurality of grooves 101 corresponding to the area of the peripheral trace 81 to form a barrier wall structure 102, and the portion of the peripheral trace 81 and the groove 101 directly facing the substrate 10 is on the substrate 10 Is located in the orthographic projection of the conductive shielding layer 130 on the substrate 10.
  • the conductive shielding layer 130 is formed on one side of the insulating layer 100, and the conductive shielding layer 130 shields the outside from damaging the surrounding traces 81 corresponding to the grooves 101 of the insulating layer 100.
  • the conductive shielding The layer 130 further forms a further protection for the peripheral wiring 81 at the retaining wall structure 102.
  • the conductive shielding layer 130 can shield external electric fields and static electricity, effectively solving the technical problems such as electrostatic discharge.
  • the above-mentioned array substrate facilitates the formation of auxiliary protection for the peripheral wiring 81 at the retaining wall structure 102, avoids the problem of electrostatic damage that is easily generated here during the alignment process, and avoids the peripheral wiring here 81 Absorption of impurity ions in the liquid crystal layer causes local brightness unevenness of the display and causes various traces.
  • the insulating layer 100 may specifically include:
  • planarization layer 1002 disposed on the side of the passivation layer 1001 facing away from the peripheral trace 81 only forms the retaining wall structure 102 on the planarization layer 1002.
  • the display area of the array substrate provided by the present invention may further include a transparent pixel electrode 110, wherein: the conductive shielding layer 130 may be connected to the transparent pixel electrode 110 same layer preparation.
  • the preparation of the conductive shielding layer 130 and the transparent pixel electrode 110 in the same layer can reduce the thickness of the array substrate and simplify the production steps.
  • the preparation material of the conductive shielding layer 130 is indium tin oxide semiconductor as an example for specific description, and the display area of the array substrate provided by the present invention, as shown in FIG. 2, may also be included in
  • the substrate 10 is arranged along the substrate 10 toward the planarization layer 1002 in the order of the gate 20, the gate insulating layer 30, the active layer 40, the source and drain (the source 50 and the drain 60 are arranged in the same layer), and the etch stop layer 70,
  • the peripheral traces 81 and the data lines 80 are located in the same layer on the side of the etch stop layer 70 facing away from the substrate 10, the passivation layer 1001 is on the side of the data line 80 facing away from the substrate 10, and the planarization layer 1002 is on the passivation layer 1001
  • the transparent pixel electrode 110 is located on the side facing away from the substrate 10 of the planarization layer 1002.
  • the conductive shielding layer 130 includes a plurality of strip-shaped shield electrodes corresponding to the peripheral traces 81, and the orthographic projection of one strip-shaped shield electrode on the substrate 10 covers the corresponding one of the peripheral traces 81 The orthographic projection of the portion passing through the retaining wall structure 102 on the substrate 10.
  • a plurality of strip-shaped shield electrodes of the conductive shield layer 130 may correspond to the peripheral traces 81 one by one, that is, each strip-shaped shield electrode corresponds to a peripheral trace 81, And the orthographic projection of the strip-shaped shielding electrode on the substrate 10 covers the orthographic projection of the peripheral wiring 81 corresponding to it one-to-one on the portion of the retaining wall structure 102.
  • each strip-shaped shield electrode forms a shield to the peripheral trace 81 corresponding to it one by one, so as to shield the peripheral trace 81 from external electric fields and static electricity, and effectively solve the technical problem of electrostatic discharge.
  • each strip-shaped shield electrode may be generally a strip shape, and the edge thereof may be a straight line or a wavy line, which will not be repeated here.
  • the peripheral wiring 81 includes data line leads, and the data line leads lead the data lines in the display area to corresponding connection terminals.
  • the peripheral wiring 81 may further include a common electrode lead.
  • the common electrode lead is used to lead the common electrode of the display area to the corresponding connection terminal. Since the common electrode lead is wider, as shown in FIG. 6, a wider common
  • the electrode lead is divided into a plurality of parallel sub-leads 811, and the parallel positions of the sub-leads 811 and the retaining wall structure 102 do not overlap each other.
  • Each common electrode lead with a larger width is designed to be composed of multiple sub-leads 811 with a smaller width in parallel, which reduces the width of the common electrode lead. Therefore, the coverage area of the common electrode lead can be reduced to facilitate shielding of external electric fields And static electricity, effectively solve the technical problems of electrostatic discharge.
  • each strip-shaped shield electrode includes a plurality of sub-strip shield electrodes, and an orthographic projection of one sub-strip shield electrode on the substrate 10 covers one The orthographic projection of the sub-lead 811 on the substrate 10.
  • each sub-strip shield electrode can correspond to the sub-lead 811 (as shown in FIG. 6), and each sub-strip shield electrode
  • the one-to-one corresponding sub-leads 811 are shielded, or several sub-strip shield electrodes shield the same first sub-lead 811, or one sub-strip shield electrode shields multiple first sub-leads 811, which is not limited herein .
  • the array substrate provided by the present invention may further include a metal shielding layer 21 formed between the substrate 10 and the peripheral trace 81, the metal shielding layer 21
  • the peripheral trace 81 is insulated from each other, and the overlapping area of the peripheral trace 81 and the groove 101 is covered by the orthographic projection of the metal shield layer 21 on the substrate 10.
  • the metal shielding layer 21 can be prepared in the same layer as the gate electrode 20.
  • the metal shielding layer 21 can also be electrically connected to the conductive shielding layer 130 through a via 150, and the via 150 can be provided in the insulating layer 100 outside the groove structure 101, as shown in FIG. 7 and As shown in Figure 8.
  • the metal shield layer 21 includes a plurality of strip-shaped metal electrodes corresponding one-to-one with the peripheral traces 81, and one strip-shaped metal electrode is formed on the substrate 10
  • the orthographic projection covers the orthographic projection of the corresponding one of the peripheral traces 81 passing through the retaining wall structure 102 on the substrate 10.
  • the strip metal electrode and the strip shield electrode corresponding to one peripheral trace 81 can be electrically connected through the via 150, and generally, the strip shield electrode will cover the strip metal electrode, that is, the area of the strip shield electrode is larger than The area of the strip metal electrode.
  • the metal shield electrode 21 may include at least one bulk metal electrode.
  • the orthographic projection of the bulk metal electrode on the substrate 10 covers multiple peripheral traces 81 passing through the retaining wall structure 102 Orthographic projection of part on the substrate 10.
  • the plurality of strip-shaped shield electrodes corresponding to the plurality of peripheral traces 81 may be electrically connected to one bulk metal electrode through the vias 150, respectively.
  • the patterns of the conductive shielding layer 130 and the metal shielding layer 21 may be provided only in the area where the peripheral wiring 81 passes through the retaining wall structure 102, ie The patterns of the conductive shielding layer 130 and the metal shielding layer 21 are not provided at the position of the peripheral lead 81 outside the retaining wall structure 102, which can reduce the thickness of the array substrate.
  • the metal shielding layer 21 has a pattern that blocks the fan-out area of the peripheral trace 81, that is, the pattern of the metal shielding layer 21 is always provided under the peripheral trace 81, and in the fan-out area, The vertical projection of the metal shielding layer 21 on the substrate 10 is located in the vertical projection of the peripheral trace 81 on the substrate 10.
  • the conductive shielding layer 130 may include at least one bulk shield electrode, and the orthographic projection of the bulk shield electrode on the substrate 10 covers multiple peripheral traces 81 through The orthographic projection of the portion passing through the barrier wall structure 102 on the substrate 10.
  • the provision of the conductive shielding layer 130 includes block-shaped shielding electrodes, which can simplify the manufacturing process and improve the production efficiency.
  • the preparation material of the conductive shielding layer 130 is metal
  • the conductive shielding layer 130 may be disposed between the planarization layer 1002 and the passivation layer 1001, and the above embodiments are not described here. A detailed structural description will be made by using the material of the conductive shielding layer 130 as a metal.
  • the conductive shielding layer 130 may be prepared in the same layer as the touch electrode lead 120, please refer to FIGS. 14 to 16.
  • the display device using the above array substrate has a structure of in-cell touch (touch panel function embedded in liquid crystal pixels).
  • the conductive shielding layer 130 can also be prepared in the same layer as the metal pixel electrode, which will not be described in detail here.
  • an embodiment of the present invention further provides a display device, including the array substrate of the foregoing embodiment.
  • the display device may be any product or component with a display function such as a liquid crystal panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like. Since the principle of the display device to solve the problem is similar to that of the aforementioned array substrate, the implementation of the display device can refer to the implementation of the aforementioned array substrate, and the repetition is not repeated here.

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Abstract

本发明涉及显示技术领域，发明了一种阵列基板及显示装置，该阵列基板包括基板，基板设有显示区域和设于基板显示区域外侧的周边走线区域；设置于周边走线区域的周边走线；设置于周边走线背离基板一侧的绝缘层，绝缘层中与周边走线区域对应位置具有多个凹槽以形成挡墙结构；设置于绝缘层一侧的导电屏蔽层，且周边走线与凹槽正对的部位在基板上的正投影位于导电屏蔽层在基板上的正投影内。本发明提供的阵列基板内导电屏蔽层形成于绝缘层的一侧，导电屏蔽层遮蔽绝缘层上凹槽对应部位的周边走线，明显的，导电屏蔽层进一步形成对挡墙结构处周边走线的进一步保护，该结构可以屏蔽外部电场和静电，有效解决静电释放的技术问题。

Description

阵列基板及显示装置
相关申请的交叉引用
本申请要求在2019年01月02日提交中国专利局、申请号为201920005949.9、申请名称为“一种阵列基板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域，特别涉及一种阵列基板及显示装置。
背景技术
在液晶显示器的阵列基板上，需要制作取向层，以使液晶能有初始的偏转角度，例如利用聚酰亚胺作为取向层的材料，由于聚酰亚胺涂覆时未固化前是有流动性的，所以需要一些设计来控制所述聚酰亚胺液涂覆的边界。
发明内容
本发明实施例提供的一种阵列基板，包括：
基板，所述基板分为显示区域和位于所述基板显示区域外侧的周边走线区域；
周边走线，位于所述周边走线区域；
绝缘层，位于所述周边走线背离所述基板一侧，所述绝缘层具有环绕所述显示区域的多个凹槽，所述凹槽之间的绝缘层和所述凹槽构成挡墙结构，所述凹槽的延伸方向与所述周边走线交叉，且所述凹槽与所述周边走线存在交叠区域；
导电屏蔽层，位于所述绝缘层背离所述基板一侧，所述周边走线与凹槽的交叠区域被所述导电屏蔽层在所述基板上的正投影所覆盖。
可选地，在本发明提供的阵列基板中，所述周边走线为多条，所述导电 屏蔽层包括与所述周边走线一一对应的多个条状屏蔽电极，且一个所述条状屏蔽电极在所述基板上的正投影覆盖对应的一条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
可选地，在本发明提供的阵列基板中，所述周边走线为多条，所述导电屏蔽电极包括至少一个块状屏蔽电极，一个所述块状屏蔽电极在所述基板上的正投影覆盖多条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
可选地，在本发明提供的阵列基板中，所述周边走线包括数据线引线。
可选地，在本发明提供的阵列基板中，所述周边走线包括公共电极引线；每个所述公共电极引线包括多条并联的子引线，所述子引线并联位置与所述挡墙结构在所述基板上的正投影互不交叠。
可选地，在本发明提供的阵列基板中，所述导电屏蔽层包括与所述子引线一一对应的多个子条状屏蔽电极，且一个所述子条状屏蔽电极在所述基板上的正投影覆盖对应的一条所述子引线在所述基板上的正投影。
可选地，在本发明提供的阵列基板中，还包括：位于所述基板与所述周边走线之间的金属遮蔽层，所述金属屏蔽层与所述周边走线相互绝缘，且所述周边走线与凹槽的交叠区域被所述金属屏蔽层在所述基板上的正投影所覆盖。
可选地，在本发明提供的阵列基板中，所述金属遮蔽层与所述导电屏蔽层之间通过过孔电连接，且所述过孔设于所述凹槽之外的绝缘层。
可选地，在本发明提供的阵列基板中，所述周边走线为多条，所述金属屏蔽层包括与所述周边走线一一对应的多个条状金属电极，且一个所述条状金属电极在所述基板上的正投影覆盖对应的一条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
可选地，在本发明提供的阵列基板中，所述周边走线为多条，所述金属屏蔽电极包括至少一个块状金属电极，一个所述块状金属电极在所述基板上的正投影覆盖多条所述周边走线穿过所述挡墙结构的部分在所述基板上的正 投影。
可选地，在本发明提供的阵列基板中，所述导电屏蔽层和所述金属屏蔽层的图案仅设置在所述周边走线穿过所述挡墙结构的区域，或，所述金属屏蔽层具有遮挡所述周边走线的扇出区域的图案。
可选地，在本发明提供的阵列基板中，所述绝缘层包括：
位于所述周边走线背离所述基板一侧的钝化层；
位于所述钝化层背离所述周边走线一侧的平坦化层，仅在所述平坦化层形成所述挡墙结构。
可选地，在本发明提供的阵列基板中，所述导电屏蔽层的材料为氧化铟锡，所述导电屏蔽层位于所述平坦化层背离所述基板的一侧。
可选地，在本发明提供的阵列基板中，还包括位于所述显示区域的像素电极，所述导电屏蔽层与所述像素电极同层制备。
可选地，在本发明提供的阵列基板中，所述导电屏蔽层的材料为金属，所述导电屏蔽层位于所述平坦化层与所述钝化层之间。
可选地，在本发明提供的阵列基板中，还包括触摸电极引线，所述导电屏蔽层与所述触摸电极引线同层制备。
可选地，在本发明提供的阵列基板中，还包括金属像素电极，所述导电屏蔽层与所述金属像素电极同层制备。
本发明还提供了一种显示装置，包括本发明提供的上述阵列基板。
附图说明
图1为本发明实施例提供的阵列基板的平面图；
图2为本发明实施例提供的阵列基板中像素薄膜晶体管的截面图；
图3为图1中沿着aa方向的截面图；
图4为图1中沿着bb方向的截面图；
图5为图1中沿着cc方向的截面图；
图6为本发明实施例提供的另一阵列基板的平面图；
图7为本发明实施例提供的另一阵列基板的平面图；
图8为图7中沿着dd方向的截面图；
图9为本发明实施例提供的另一阵列基板的平面图；
图10为本发明实施例提供的另一阵列基板的平面图；
图11为本发明实施例提供的另一阵列基板的平面图；
图12为图11中沿着ee方向的截面图；
图13为图11中沿着ff方向的截面图；
图14为本发明实施例提供的另一阵列基板的平面图；
图15为本发明实施例提供的阵列基板中另一像素薄膜晶体管的截面图；
图16为图14中沿着gg方向的截面图；
图17为本发明实施例提供的阵列基板的俯视图。
具体实施方式
在液晶显示器的阵列基板上，挡墙结构布置在非显示区封框胶以内的四边，挡墙结构由平坦化层开槽构成。取向膜的聚酰亚胺液流入挡墙结构的凹槽内，在此，取向膜的挡墙结构为波浪状的设计，聚酰亚胺液朝挡墙结构的流动会顺着凸部和凹部间的弧状边缘来流动，缓冲聚酰亚胺液和挡墙结构之间作用的力量，使聚酰亚胺液不能越过挡墙结构，从而实现控制所述聚酰亚胺液涂覆的边界。
但是，由于挡墙处的平坦化层被挖空，使得源漏金属层走线即周边走线上方仅有0.2微米左右的钝化层保护，容易发生以下两个问题：(1)取向工艺中在此处更容易发生摩擦静电损伤；(2)此处的周边走线更容易吸附液晶层的杂质离子导致显示器局部亮度不均匀，造成各种痕迹的现象。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图1-图3，本发明提供的一种阵列基板，包括：
如图17所示，基板10，基板10设有显示区域A和设于基板10显示区域A外侧的周边走线区域B，图1仅示出了周边走线区域B；
位于周边走线区域B的周边走线81；
位于周边走线81背离基板10一侧的绝缘层100，绝缘层100具有环绕显示区域的多个凹槽101，凹槽101之间的绝缘层100和凹槽101构成挡墙结构102，凹槽101的延伸方向与周边走线81交叉，且凹槽101与周边走线81存在交叠区域；图1中以凹槽101的延伸方向为水平方向，周边走线81的延伸方向为竖直方向为例进行说明；
位于绝缘层100背离基板10一侧的导电屏蔽层130，且周边走线81与凹槽101的交叠区域被导电屏蔽层130在基板10上的正投影所覆盖。
上述阵列基板中，阵列基板包括基板10，基板10设有显示区域和周边走线区域，周边走线区域内设有周边走线81，且该阵列基板还包括设于周边走线背离基板10一侧的绝缘层100以及设于绝缘层100背离基板10一侧的导电屏蔽层130。具体地，上述阵列基板中，绝缘层100中与周边走线81区域对应位置具有多个凹槽101以形成挡墙结构102，而周边走线81与凹槽101正对的部位在基板10上的正投影位于导电屏蔽层130在基板10上的正投影内。
本发明提供的阵列基板中，导电屏蔽层130形成于绝缘层100的一侧，导电屏蔽层130遮蔽外界对绝缘层100的凹槽101对应部位的周边走线81的损伤，明显的，导电屏蔽层130进一步形成对挡墙结构102处周边走线81的进一步保护，导电屏蔽层130可以屏蔽外部电场和静电，有效解决静电释放等技术问题。
因此，上述阵列基板通过改变基板10内的结构，便于对挡墙结构102处的周边走线81形成辅助保护，避免在取向工艺中此处易产生的静电损伤问题，以及避免此处周边走线81吸附液晶层的杂质离子导致显示器局部亮度不均匀、造成各种痕迹的现象。
具体地，在本发明实施例提供的上述阵列基板中，如图2和图3所示，绝缘层100可以具体包括：
位于周边走线81背离基板10一侧的钝化层1001；
设置于钝化层1001背离周边走线81一侧的平坦化层1002，仅在平坦化层1002形成挡墙结构102。
具体地，在本发明实施例提供的上述阵列基板中，导电屏蔽层103的制备材料存在多种可能：
当导电屏蔽层130的制备材料为铟锡氧化物半导体时，如图2所示，本发明提供的阵列基板的显示区域还可以包括透明像素电极110，其中：导电屏蔽层130可以与透明像素电极110同层制备。导电屏蔽层130与透明像素电极110同层制备可以减小阵列基板的厚度，且简化生产步骤。
具体地，以下技术方案中是以导电屏蔽层130的制备材料为铟锡氧化物半导体为例进行具体说明，且本发明提供的阵列基板的显示区域中，如图2所示，还可以包括在基板10沿基板10指向平坦化层1002依次排列的栅极20、栅极绝缘层30、有源层40、源漏极(源极50和漏极60同层设置)以及刻蚀阻挡层70，其中，周边走线81与数据线80同层设置位于刻蚀阻挡层70背离基板10的一侧，钝化层1001位于数据线80背离基板10的一侧，平坦化层1002位于钝化层1001背离基板10的一侧，透明像素电极110位于平坦化层1002背离基板10的一侧。
在上述技术方案的基础上，周边走线81与导电遮蔽层130之间的遮蔽关系存在多种可能，具体至少为以下几种结构中的一种：
结构一：
周边走线81为多条，导电屏蔽层130包括与周边走线81一一对应的多个条状屏蔽电极，且一个条状屏蔽电极在基板10上的正投影覆盖对应的一条周边走线81穿过挡墙结构102的部分在基板10上的正投影。
具体地，请参考图1、图3至图5，导电屏蔽层130的多个条状屏蔽电极可以与周边走线81一一对应，即，每个条状屏蔽电极对应一条周边走线81， 且该条状屏蔽电极在基板10上的正投影覆盖与其一一对应的周边走线81在挡墙结构102部分的正投影。
由上述分析可知，每个条状屏蔽电极形成对与其一一对应的周边走线81的遮蔽，以针对该条周边走线81屏蔽外部电场和静电，有效解决静电释放的技术问题。
需要说明的是，每个条状屏蔽电极的形状大致可以为条形，其边缘可以是直线也可以是波浪线，在此不再进行赘述。
当然，除条状屏蔽电极与周边走线81一一对应的结构外，还存在若干条状屏蔽电极遮蔽同一条周边走线81，或者，一个条状屏蔽电极遮蔽多条周边走线81，以及上述各种结构共同存在的结构，值得注意的是，条状屏蔽电极与周边走线81的设置形式可根据实际生产设计需求进行变化。
具体地，在本发明实施例提供的上述阵列基板中，周边走线81包括数据线引线，数据线引线将显示区域的数据线引出至对应的连接端子。周边走线81还可以包括公共电极引线，公共电极引线用于将显示区域的公共电极引出至对应的连接端子，由于公共电极引线较宽，因此，如图6所示，可以将较宽的公共电极引线分割成多条并联的子引线811，子引线811并联位置与挡墙结构102互不交叠。将每条宽度较大的公共电极引线设计成由多条宽度较小的子引线811并联组成，减小了公共电极引线的宽度，因而，可以减小公共电极引线的覆盖面积，便于屏蔽外部电场和静电，有效解决静电释放的技术问题。
对应上述技术方案中的多条子引线811，如图6所示，可设置：每个条状屏蔽电极包括多个子条状屏蔽电极，且一个子条状屏蔽电极在基板10上的正投影覆盖一条子引线811在基板10上的正投影。
需要说明的是，参照条状屏蔽电极与周边引线81之间的对应关系，每个子条状屏蔽电极可以与子引线811一一对应(如图6所示)，且每个子条状屏蔽电极对与其一一对应的子引线811进行遮蔽，或者，若干子条状屏蔽电极遮蔽同一条第一子引线811，或者，一个子条状屏蔽电极遮蔽多条第一子引线 811，在此不做限定。此外，还存在上述各种结构共同存在的结构，子条状屏蔽电极与第一子引线811的设置形式可根据实际生产设计需求进行变化。
在上述技术方案的基础上，作为一种实施方式：如图1所示，本发明提供的阵列基板还可以包括形成于基板10与周边走线81之间的金属遮蔽层21，金属屏蔽层21与周边走线81相互绝缘，且周边走线81与凹槽101的交叠区域被金属屏蔽层21在基板10上的正投影所覆盖。一般金属遮蔽层21可以与栅极20同层制备。
在上述技术方案的基础上，金属遮蔽层21还可以与导电屏蔽层130之间通过过孔150电连接，且过孔150可以设于凹槽结构101之外的绝缘层100，如图7和图8所示。
具体地，在本发明提供的阵列基板中，如图6所示，金属屏蔽层21包括与周边走线81一一对应的多个条状金属电极，且一个条状金属电极在基板10上的正投影覆盖对应的一条周边走线81穿过挡墙结构102的部分在基板10上的正投影。此时，一条周边走线81对应的条状金属电极和条状屏蔽电极可以通过过孔150电连接，且一般地，条状屏蔽电极会覆盖条状金属电极，即条状屏蔽电极的面积大于条状金属电极的面积。
或者，在本发明提供的阵列基板中，金属屏蔽电极21可以包括至少一个块状金属电极，一个块状金属电极在基板10上的正投影覆盖多条周边走线81穿过挡墙结构102的部分在基板10上的正投影。此时，多条周边走线81对应的多个条状屏蔽电极可以分别通过过孔150与一个块状金属电极电连接。
作为另一种实施方式：在本发明提供的阵列基板中，请参考图9，导电屏蔽层130和金属屏蔽层21的图案可以仅设置在周边走线81穿过挡墙结构102的区域，即在挡墙结构102之外的周边引线81位置处不会设置导电屏蔽层130和金属屏蔽层21的图案，这样可以减薄阵列基板的厚度。
或者，请参考图10，金属屏蔽层21具有遮挡周边走线81的扇出区域的图案，即在周边走线81的下方均一直设置有金属遮蔽层21的图案，且在扇出区域内，金属遮蔽层21在基板10上的垂直投影位于周边走线81在基板10 上的垂直投影内。
结构二：
请参考图11至图13，周边走线18为多条，导电屏蔽层130可以包括至少一个块状屏蔽电极，且一个块状屏蔽电极在基板10上的正投影覆盖多条周边走线81穿过挡墙结构102的部分在基板10上的正投影。设置导电屏蔽层130包括块状屏蔽电极，可简化制备工艺，提高生产效率。
此外，当导电屏蔽层130的制备材料为金属时，请参考图14至图16，导电屏蔽层130可以设于平坦化层1002与钝化层1001之间，在此不再对上述各实施方式以导电屏蔽层130的制备材料为金属进行详细结构描述。
当然，当本发明提供的阵列基板还可以包括触摸电极引线120时，导电屏蔽层130可以与触摸电极引线120同层制备，请参考图14至图16。
需要说明的是，应用上述阵列基板的显示装置，为in cell touch(触摸面板功能嵌入到液晶像素中)的结构。
此外，当本发明提供的阵列基板还包括金属像素电极时，导电屏蔽层130也可以与金属像素电极同层制备，在此不作详述。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括上述实施例的阵列基板。所述显示装置可以为：液晶面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。由于该显示装置解决问题的原理与前述一种阵列基板相似，因此该显示装置的实施可以参见前述阵列基板的实施，重复之处不再赘述。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (18)

  1. 一种阵列基板，其中，包括：
    基板，所述基板分为显示区域和位于所述基板显示区域外侧的周边走线区域；
    周边走线，位于所述周边走线区域；
    绝缘层，位于所述周边走线背离所述基板一侧，所述绝缘层具有环绕所述显示区域的多个凹槽，所述凹槽之间的绝缘层和所述凹槽构成挡墙结构，所述凹槽的延伸方向与所述周边走线交叉，且所述凹槽与所述周边走线存在交叠区域；
    导电屏蔽层，位于所述绝缘层背离所述基板一侧，所述周边走线与凹槽的交叠区域被所述导电屏蔽层在所述基板上的正投影所覆盖。
  2. 根据权利要求1所述的阵列基板，其中，所述周边走线为多条，所述导电屏蔽层包括与所述周边走线一一对应的多个条状屏蔽电极，且一个所述条状屏蔽电极在所述基板上的正投影覆盖对应的一条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
  3. 根据权利要求1所述的阵列基板，其中，所述周边走线为多条，所述导电屏蔽电极包括至少一个块状屏蔽电极，一个所述块状屏蔽电极在所述基板上的正投影覆盖多条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
  4. 根据权利要求1所述的阵列基板，其中，所述周边走线包括数据线引线。
  5. 根据权利要求1所述的阵列基板，其中，所述周边走线包括公共电极引线；每个所述公共电极引线包括多条并联的子引线，所述子引线并联位置与所述挡墙结构在所述基板上的正投影互不交叠。
  6. 根据权利要求5所述的阵列基板，其中，所述导电屏蔽层包括与所述子引线一一对应的多个子条状屏蔽电极，且一个所述子条状屏蔽电极在所述 基板上的正投影覆盖对应的一条所述子引线在所述基板上的正投影。
  7. 根据权利要求1所述的阵列基板，其中，还包括：位于所述基板与所述周边走线之间的金属遮蔽层，所述金属屏蔽层与所述周边走线相互绝缘，且所述周边走线与凹槽的交叠区域被所述金属屏蔽层在所述基板上的正投影所覆盖。
  8. 根据权利要求7所述的阵列基板，其中，所述金属遮蔽层与所述导电屏蔽层之间通过过孔电连接，且所述过孔设于所述凹槽之外的绝缘层。
  9. 根据权利要求7所述的阵列基板，其中，所述周边走线为多条，所述金属屏蔽层包括与所述周边走线一一对应的多个条状金属电极，且一个所述条状金属电极在所述基板上的正投影覆盖对应的一条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
  10. 根据权利要求7所述的阵列基板，其中，所述周边走线为多条，所述金属屏蔽电极包括至少一个块状金属电极，一个所述块状金属电极在所述基板上的正投影覆盖多条所述周边走线穿过所述挡墙结构的部分在所述基板上的正投影。
  11. 根据权利要求7所述的阵列基板，其中，所述导电屏蔽层和所述金属屏蔽层的图案仅设置在所述周边走线穿过所述挡墙结构的区域，或，所述金属屏蔽层具有遮挡所述周边走线的扇出区域的图案。
  12. 根据权利要求1-11任一项所述的阵列基板，其中，所述绝缘层包括：
    位于所述周边走线背离所述基板一侧的钝化层；
    位于所述钝化层背离所述周边走线一侧的平坦化层，仅在所述平坦化层形成所述挡墙结构。
  13. 根据权利要求12所述的阵列基板，其中，所述导电屏蔽层的材料为氧化铟锡，所述导电屏蔽层位于所述平坦化层背离所述基板的一侧。
  14. 根据权利要求13所述的阵列基板，其中，还包括位于所述显示区域的像素电极，所述导电屏蔽层与所述像素电极同层制备。
  15. 根据权利要求12所述的阵列基板，其中，所述导电屏蔽层的材料为 金属，所述导电屏蔽层位于所述平坦化层与所述钝化层之间。
  16. 根据权利要求15所述的阵列基板，其中，还包括触摸电极引线，所述导电屏蔽层与所述触摸电极引线同层制备。
  17. 根据权利要求15所述的阵列基板，其中，还包括金属像素电极，所述导电屏蔽层与所述金属像素电极同层制备。
  18. 一种显示装置，其中，包括根据权利要求1-17任一项所述的阵列基板。
PCT/CN2019/123401 2019-01-02 2019-12-05 阵列基板及显示装置 WO2020140688A1 (zh)

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