CN105789332A - 整流器件、整流器件的制造方法及esd保护器件 - Google Patents
整流器件、整流器件的制造方法及esd保护器件 Download PDFInfo
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- CN105789332A CN105789332A CN201610263857.1A CN201610263857A CN105789332A CN 105789332 A CN105789332 A CN 105789332A CN 201610263857 A CN201610263857 A CN 201610263857A CN 105789332 A CN105789332 A CN 105789332A
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- doped region
- rectifying device
- semiconductor layer
- semiconductor substrate
- epitaxial semiconductor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 230000002441 reversible effect Effects 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims description 56
- 238000002955 isolation Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 230000003071 parasitic effect Effects 0.000 abstract description 9
- 230000004044 response Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 78
- 230000008859 change Effects 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610263857.1A CN105789332B (zh) | 2016-04-25 | 2016-04-25 | 整流器件、整流器件的制造方法及esd保护器件 |
US15/496,271 US20170309610A1 (en) | 2016-04-25 | 2017-04-25 | Rectification device, method for manufacturing the same and esd protection device |
US16/850,230 US20200243504A1 (en) | 2016-04-25 | 2020-04-16 | Rectification device having a forward pn junction and a reverse schottky barrier formed in an epitaxial semiconductor layer formed over a semiconductor substrate |
US17/720,262 US20220238508A1 (en) | 2016-04-25 | 2022-04-13 | Vertical device having a reverse schottky barrier formed in an epitaxial semiconductor layer formed over a semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610263857.1A CN105789332B (zh) | 2016-04-25 | 2016-04-25 | 整流器件、整流器件的制造方法及esd保护器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105789332A true CN105789332A (zh) | 2016-07-20 |
CN105789332B CN105789332B (zh) | 2019-02-26 |
Family
ID=56398508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610263857.1A Active CN105789332B (zh) | 2016-04-25 | 2016-04-25 | 整流器件、整流器件的制造方法及esd保护器件 |
Country Status (2)
Country | Link |
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US (2) | US20170309610A1 (zh) |
CN (1) | CN105789332B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106558543A (zh) * | 2016-08-11 | 2017-04-05 | 矽力杰半导体技术(杭州)有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
CN109449153A (zh) * | 2018-10-31 | 2019-03-08 | 深圳市富裕泰贸易有限公司 | 一种功率器件防护芯片及其制造方法 |
US10290624B2 (en) | 2016-10-12 | 2019-05-14 | Silergy Semiconductor Technology (Hangzhou) Ltd. | ESD protection device and method for manufacturing the same |
CN110336262B (zh) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | 一种浪涌保护电路 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106847880B (zh) | 2017-01-23 | 2019-11-26 | 矽力杰半导体技术(杭州)有限公司 | 一种半导体器件及其制备方法 |
CN107871787B (zh) | 2017-10-11 | 2021-10-12 | 矽力杰半导体技术(杭州)有限公司 | 一种制造沟槽mosfet的方法 |
CN110047759A (zh) | 2019-04-28 | 2019-07-23 | 矽力杰半导体技术(杭州)有限公司 | 沟槽型mosfet器件制造方法 |
CN111580687B (zh) | 2020-04-30 | 2023-11-14 | 京东方科技集团股份有限公司 | 数据处理方法、装置和智能交互设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1715527A2 (en) * | 2005-04-20 | 2006-10-25 | Delphi Technologies, Inc. | Electrostatic discharge protection device |
CN101626020A (zh) * | 2008-07-10 | 2010-01-13 | 半导体元件工业有限责任公司 | 低钳位电压esd装置及其方法 |
US20120068299A1 (en) * | 2010-09-22 | 2012-03-22 | Amazing Microelectronic Corp. | Transient voltage suppressors |
CN104009094A (zh) * | 2013-02-25 | 2014-08-27 | 株式会社东芝 | 半导体器件 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US7781826B2 (en) * | 2006-11-16 | 2010-08-24 | Alpha & Omega Semiconductor, Ltd. | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
KR100763848B1 (ko) * | 2006-07-05 | 2007-10-05 | 삼성전자주식회사 | 쇼트키 다이오드 및 그 제조 방법 |
US8222698B2 (en) * | 2009-06-29 | 2012-07-17 | Analog Devices, Inc. | Bond pad with integrated transient over-voltage protection |
CN104851919B (zh) * | 2015-04-10 | 2017-12-19 | 矽力杰半导体技术(杭州)有限公司 | 双向穿通半导体器件及其制造方法 |
CN105261616B (zh) * | 2015-09-22 | 2018-05-11 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN106057781B (zh) * | 2016-05-27 | 2019-02-15 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件的制造方法 |
CN106558543B (zh) * | 2016-08-11 | 2023-09-01 | 南京矽力微电子技术有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
CN106229314B (zh) * | 2016-08-15 | 2020-01-24 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件及其制造方法 |
CN106449636B (zh) * | 2016-10-12 | 2019-12-10 | 矽力杰半导体技术(杭州)有限公司 | Esd保护器件及其制造方法 |
-
2016
- 2016-04-25 CN CN201610263857.1A patent/CN105789332B/zh active Active
-
2017
- 2017-04-25 US US15/496,271 patent/US20170309610A1/en not_active Abandoned
-
2020
- 2020-04-16 US US16/850,230 patent/US20200243504A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1715527A2 (en) * | 2005-04-20 | 2006-10-25 | Delphi Technologies, Inc. | Electrostatic discharge protection device |
CN101626020A (zh) * | 2008-07-10 | 2010-01-13 | 半导体元件工业有限责任公司 | 低钳位电压esd装置及其方法 |
US20120068299A1 (en) * | 2010-09-22 | 2012-03-22 | Amazing Microelectronic Corp. | Transient voltage suppressors |
CN104009094A (zh) * | 2013-02-25 | 2014-08-27 | 株式会社东芝 | 半导体器件 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106558543A (zh) * | 2016-08-11 | 2017-04-05 | 矽力杰半导体技术(杭州)有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
CN106558543B (zh) * | 2016-08-11 | 2023-09-01 | 南京矽力微电子技术有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
US10290624B2 (en) | 2016-10-12 | 2019-05-14 | Silergy Semiconductor Technology (Hangzhou) Ltd. | ESD protection device and method for manufacturing the same |
US10573636B2 (en) | 2016-10-12 | 2020-02-25 | Silergy Semiconductor Technology (Hangzhou) Ltd. | ESD protection device and method for manufacturing the same |
CN109449153A (zh) * | 2018-10-31 | 2019-03-08 | 深圳市富裕泰贸易有限公司 | 一种功率器件防护芯片及其制造方法 |
CN110336262B (zh) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | 一种浪涌保护电路 |
Also Published As
Publication number | Publication date |
---|---|
US20170309610A1 (en) | 2017-10-26 |
US20200243504A1 (en) | 2020-07-30 |
CN105789332B (zh) | 2019-02-26 |
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