CN106229314B - 静电放电保护器件及其制造方法 - Google Patents
静电放电保护器件及其制造方法 Download PDFInfo
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- CN106229314B CN106229314B CN201610671655.0A CN201610671655A CN106229314B CN 106229314 B CN106229314 B CN 106229314B CN 201610671655 A CN201610671655 A CN 201610671655A CN 106229314 B CN106229314 B CN 106229314B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
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- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
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- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
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- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Semiconductor Integrated Circuits (AREA)
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Abstract
Description
Claims (22)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201610671655.0A CN106229314B (zh) | 2016-08-15 | 2016-08-15 | 静电放电保护器件及其制造方法 |
US15/671,816 US10128227B2 (en) | 2016-08-15 | 2017-08-08 | ESD protection device and method for manufacturing the same |
Applications Claiming Priority (1)
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CN201610671655.0A CN106229314B (zh) | 2016-08-15 | 2016-08-15 | 静电放电保护器件及其制造方法 |
Publications (2)
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CN106229314A CN106229314A (zh) | 2016-12-14 |
CN106229314B true CN106229314B (zh) | 2020-01-24 |
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CN201610671655.0A Active CN106229314B (zh) | 2016-08-15 | 2016-08-15 | 静电放电保护器件及其制造方法 |
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US (1) | US10128227B2 (zh) |
CN (1) | CN106229314B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789332B (zh) * | 2016-04-25 | 2019-02-26 | 矽力杰半导体技术(杭州)有限公司 | 整流器件、整流器件的制造方法及esd保护器件 |
CN106057781B (zh) | 2016-05-27 | 2019-02-15 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件的制造方法 |
CN106558543B (zh) | 2016-08-11 | 2023-09-01 | 南京矽力微电子技术有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
US10535648B2 (en) * | 2017-08-23 | 2020-01-14 | Semiconductor Components Industries, Llc | TVS semiconductor device and method therefor |
CN108565260B (zh) * | 2018-04-08 | 2020-10-27 | 南京矽力微电子技术有限公司 | 一种半导体器件 |
CN108807370B (zh) * | 2018-05-23 | 2020-10-23 | 湖南大学 | 静电保护器件 |
US10930637B2 (en) | 2018-09-06 | 2021-02-23 | Amazing Microelectronic Corp. | Transient voltage suppressor |
TWI694581B (zh) | 2018-12-26 | 2020-05-21 | 財團法人工業技術研究院 | 靜電放電防護裝置與具有電容的整合被動元件 |
US11063034B2 (en) * | 2019-06-27 | 2021-07-13 | Micron Technology, Inc. | Capacitor structures |
CN113161350B (zh) * | 2020-01-22 | 2023-01-31 | 深圳市汇芯通信技术有限公司 | 一种集成芯片及其制作方法和集成电路 |
US20220052035A1 (en) * | 2020-08-14 | 2022-02-17 | Amazing Microelectronic Corp. | Vertical electrostatic discharge protection device |
CN114242715B (zh) * | 2021-12-01 | 2022-09-06 | 杭州傲芯科技有限公司 | 一种双向静电放电保护模块 |
WO2023133107A1 (en) * | 2022-01-06 | 2023-07-13 | Qorvo Us, Inc. | Compact esd structure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6987300B2 (en) * | 2004-03-25 | 2006-01-17 | Microchip Technology Incorporated | High voltage ESD-protection structure |
JP2013073992A (ja) | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | 半導体装置 |
CN105261616B (zh) | 2015-09-22 | 2018-05-11 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
CN106057781B (zh) | 2016-05-27 | 2019-02-15 | 矽力杰半导体技术(杭州)有限公司 | 静电放电保护器件的制造方法 |
CN106558543B (zh) | 2016-08-11 | 2023-09-01 | 南京矽力微电子技术有限公司 | 静电释放保护器件的半导体结构以及制造方法 |
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2016
- 2016-08-15 CN CN201610671655.0A patent/CN106229314B/zh active Active
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2017
- 2017-08-08 US US15/671,816 patent/US10128227B2/en active Active
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US20180047717A1 (en) | 2018-02-15 |
US10128227B2 (en) | 2018-11-13 |
CN106229314A (zh) | 2016-12-14 |
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