CN105719950B - 硅蚀刻与清洁 - Google Patents

硅蚀刻与清洁 Download PDF

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Publication number
CN105719950B
CN105719950B CN201510965135.6A CN201510965135A CN105719950B CN 105719950 B CN105719950 B CN 105719950B CN 201510965135 A CN201510965135 A CN 201510965135A CN 105719950 B CN105719950 B CN 105719950B
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China
Prior art keywords
etching
gas
processing chamber
plasma processing
plasma
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CN201510965135.6A
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English (en)
Chinese (zh)
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CN105719950A (zh
Inventor
汤姆·A·坎普
亚历山大·M·帕特森
尼马·拉斯特加尔
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
CN201510965135.6A 2014-12-19 2015-12-21 硅蚀刻与清洁 Active CN105719950B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/576,978 2014-12-19
US14/576,978 US20160181111A1 (en) 2014-12-19 2014-12-19 Silicon etch and clean

Publications (2)

Publication Number Publication Date
CN105719950A CN105719950A (zh) 2016-06-29
CN105719950B true CN105719950B (zh) 2019-05-17

Family

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Family Applications (1)

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CN201510965135.6A Active CN105719950B (zh) 2014-12-19 2015-12-21 硅蚀刻与清洁

Country Status (6)

Country Link
US (1) US20160181111A1 (cg-RX-API-DMAC7.html)
JP (1) JP2016136617A (cg-RX-API-DMAC7.html)
KR (1) KR20160075330A (cg-RX-API-DMAC7.html)
CN (1) CN105719950B (cg-RX-API-DMAC7.html)
SG (1) SG10201510080RA (cg-RX-API-DMAC7.html)
TW (1) TWI709171B (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016130795A1 (en) * 2015-02-12 2016-08-18 Massachusetts Institute Of Technology Methods and apparatus for variable selectivity atomic layer etching
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US20190157051A1 (en) * 2017-11-20 2019-05-23 Lam Research Corporation Method for cleaning chamber
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
CN111933566A (zh) * 2020-09-24 2020-11-13 晶芯成(北京)科技有限公司 浅沟槽隔离结构的形成方法
CN115672874A (zh) * 2021-07-30 2023-02-03 江苏鲁汶仪器股份有限公司 一种等离子体处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101903984A (zh) * 2007-12-21 2010-12-01 应用材料股份有限公司 利用等离子体清洁处理形成钝化层以降低自然氧化物生长的方法
CN102931130A (zh) * 2011-08-11 2013-02-13 应用材料公司 灰化后侧壁修复

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939811B2 (en) * 2002-09-25 2005-09-06 Lam Research Corporation Apparatus and method for controlling etch depth
US8173547B2 (en) * 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US8501629B2 (en) * 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
US20120220116A1 (en) * 2011-02-25 2012-08-30 Applied Materials, Inc. Dry Chemical Cleaning For Semiconductor Processing
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP5507654B2 (ja) * 2012-11-30 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
JP6083315B2 (ja) * 2013-05-08 2017-02-22 株式会社デンソー 物理量センサの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101903984A (zh) * 2007-12-21 2010-12-01 应用材料股份有限公司 利用等离子体清洁处理形成钝化层以降低自然氧化物生长的方法
CN102931130A (zh) * 2011-08-11 2013-02-13 应用材料公司 灰化后侧壁修复

Also Published As

Publication number Publication date
SG10201510080RA (en) 2016-07-28
TW201640578A (zh) 2016-11-16
US20160181111A1 (en) 2016-06-23
TWI709171B (zh) 2020-11-01
JP2016136617A (ja) 2016-07-28
KR20160075330A (ko) 2016-06-29
CN105719950A (zh) 2016-06-29

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