CN105705684A - 制造碳化硅半导体衬底的方法 - Google Patents

制造碳化硅半导体衬底的方法 Download PDF

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Publication number
CN105705684A
CN105705684A CN201480009899.1A CN201480009899A CN105705684A CN 105705684 A CN105705684 A CN 105705684A CN 201480009899 A CN201480009899 A CN 201480009899A CN 105705684 A CN105705684 A CN 105705684A
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CN
China
Prior art keywords
silicon carbide
main surface
substrate
carbon atoms
semiconductor substrate
Prior art date
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Pending
Application number
CN201480009899.1A
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English (en)
Chinese (zh)
Inventor
玄番润
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN105705684A publication Critical patent/CN105705684A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CN201480009899.1A 2013-03-27 2014-03-26 制造碳化硅半导体衬底的方法 Pending CN105705684A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013066491A JP2014189442A (ja) 2013-03-27 2013-03-27 炭化珪素半導体基板の製造方法
JP2013-066491 2013-03-27
PCT/JP2014/058524 WO2014157332A1 (ja) 2013-03-27 2014-03-26 炭化珪素半導体基板の製造方法

Publications (1)

Publication Number Publication Date
CN105705684A true CN105705684A (zh) 2016-06-22

Family

ID=51624295

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480009899.1A Pending CN105705684A (zh) 2013-03-27 2014-03-26 制造碳化硅半导体衬底的方法

Country Status (4)

Country Link
US (1) US9269572B2 (https=)
JP (1) JP2014189442A (https=)
CN (1) CN105705684A (https=)
WO (1) WO2014157332A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114303232A (zh) * 2019-08-06 2022-04-08 株式会社电装 SiC衬底的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102265623B1 (ko) * 2018-12-26 2021-06-22 한국세라믹기술원 증착공정에서 발생되는 탄화규소 부산물의 재생 방법
WO2022205480A1 (zh) * 2021-04-02 2022-10-06 眉山博雅新材料有限公司 一种组合晶体制备方法和系统
JP7798759B2 (ja) * 2022-12-14 2026-01-14 株式会社デンソー 半導体装置の製造方法

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CN101536157A (zh) * 2006-08-25 2009-09-16 住友电气工业株式会社 用于制造碳化硅衬底的方法以及碳化硅衬底
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CN102592976A (zh) * 2012-03-22 2012-07-18 西安电子科技大学 P型重掺杂碳化硅薄膜外延制备方法
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CN101536157A (zh) * 2006-08-25 2009-09-16 住友电气工业株式会社 用于制造碳化硅衬底的方法以及碳化硅衬底
JP2010095431A (ja) * 2008-10-20 2010-04-30 Toyota Motor Corp ＳｉＣ薄膜形成装置
CN101404249A (zh) * 2008-11-07 2009-04-08 中国电子科技集团公司第五十五研究所 一种制作基本上没有台阶形貌的碳化硅外延层的方法
CN102534808A (zh) * 2010-12-14 2012-07-04 北京天科合达蓝光半导体有限公司 高质量碳化硅表面的获得方法
CN102592976A (zh) * 2012-03-22 2012-07-18 西安电子科技大学 P型重掺杂碳化硅薄膜外延制备方法
CN103614779A (zh) * 2013-11-28 2014-03-05 中国电子科技集团公司第五十五研究所 一种提高碳化硅外延片片内n型掺杂浓度均匀性的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114303232A (zh) * 2019-08-06 2022-04-08 株式会社电装 SiC衬底的制造方法

Also Published As

Publication number Publication date
US20150311069A1 (en) 2015-10-29
WO2014157332A1 (ja) 2014-10-02
JP2014189442A (ja) 2014-10-06
US9269572B2 (en) 2016-02-23

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