CN105643107B - 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状 - Google Patents

在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状 Download PDF

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Publication number
CN105643107B
CN105643107B CN201610048597.6A CN201610048597A CN105643107B CN 105643107 B CN105643107 B CN 105643107B CN 201610048597 A CN201610048597 A CN 201610048597A CN 105643107 B CN105643107 B CN 105643107B
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China
Prior art keywords
laser
aperture
image
light
optical element
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CN201610048597.6A
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English (en)
Chinese (zh)
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CN105643107A (zh
Inventor
道格拉斯·E·霍姆格伦
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Applied Materials Inc
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Applied Materials Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06—Surface hardening
    • C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
CN201610048597.6A 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状 Active CN105643107B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361777531P 2013-03-12 2013-03-12
US61/777,531 2013-03-12
CN201380074089.XA CN105026097B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状

Related Parent Applications (1)

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CN201380074089.XA Division CN105026097B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状

Publications (2)

Publication Number Publication Date
CN105643107A CN105643107A (zh) 2016-06-08
CN105643107B true CN105643107B (zh) 2019-03-01

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CN201610048597.6A Active CN105643107B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
CN201380074089.XA Active CN105026097B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
CN201710676222.9A Active CN107479203B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑
CN201710626274.5A Active CN107577056B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状

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CN201710676222.9A Active CN107479203B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑
CN201710626274.5A Active CN107577056B (zh) 2013-03-12 2013-12-18 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状

Country Status (7)

Country Link
US (2) US9395545B2 (enExample)
EP (1) EP2969368A4 (enExample)
JP (1) JP6346263B2 (enExample)
KR (3) KR102091652B1 (enExample)
CN (4) CN105643107B (enExample)
TW (2) TWI645457B (enExample)
WO (1) WO2014143298A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102091652B1 (ko) * 2013-03-12 2020-03-20 어플라이드 머티어리얼스, 인코포레이티드 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치
CN110133772B (zh) * 2019-06-25 2024-06-11 南京溯远基因科技有限公司 光阑装置及基因测序仪
CN111921174A (zh) * 2020-06-19 2020-11-13 合肥润成体育用品有限公司 一种羽毛球拍手柄制作方法
CN112355488B (zh) * 2020-11-05 2021-12-03 中国工程物理研究院激光聚变研究中心 一种抗激光损伤的软边光阑制备方法

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EP0500393A2 (en) * 1991-02-22 1992-08-26 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
CN101726839A (zh) * 2008-10-28 2010-06-09 索尼株式会社 物镜、光学拾取设备、光学记录/再现设备和校正像差方法

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JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
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US5059013A (en) * 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
EP0500393A2 (en) * 1991-02-22 1992-08-26 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
CN101726839A (zh) * 2008-10-28 2010-06-09 索尼株式会社 物镜、光学拾取设备、光学记录/再现设备和校正像差方法

Also Published As

Publication number Publication date
KR20150132302A (ko) 2015-11-25
KR20190079693A (ko) 2019-07-05
US10444522B2 (en) 2019-10-15
JP6346263B2 (ja) 2018-06-20
US20140268749A1 (en) 2014-09-18
CN107577056A (zh) 2018-01-12
CN105026097B (zh) 2017-08-29
KR102091652B1 (ko) 2020-03-20
CN105643107A (zh) 2016-06-08
JP2016518698A (ja) 2016-06-23
TWI607493B (zh) 2017-12-01
EP2969368A1 (en) 2016-01-20
TWI645457B (zh) 2018-12-21
KR20170081277A (ko) 2017-07-11
CN107479203B (zh) 2020-12-29
CN105026097A (zh) 2015-11-04
WO2014143298A1 (en) 2014-09-18
TW201816854A (zh) 2018-05-01
KR101754265B1 (ko) 2017-07-06
US9395545B2 (en) 2016-07-19
CN107577056B (zh) 2020-04-03
CN107479203A (zh) 2017-12-15
TW201435994A (zh) 2014-09-16
US20160327801A1 (en) 2016-11-10
KR101994993B1 (ko) 2019-07-01
EP2969368A4 (en) 2016-11-16

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