JP6346263B2 - レーザアニールシステムにおいてエッジプロファイルを制御するためのカスタマイズされた瞳ストップ形状 - Google Patents

レーザアニールシステムにおいてエッジプロファイルを制御するためのカスタマイズされた瞳ストップ形状 Download PDF

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Publication number
JP6346263B2
JP6346263B2 JP2016500127A JP2016500127A JP6346263B2 JP 6346263 B2 JP6346263 B2 JP 6346263B2 JP 2016500127 A JP2016500127 A JP 2016500127A JP 2016500127 A JP2016500127 A JP 2016500127A JP 6346263 B2 JP6346263 B2 JP 6346263B2
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aperture
image
laser
relay
light
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Japanese (ja)
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JP2016518698A5 (enExample
JP2016518698A (ja
Inventor
ダグラス イー． ホルムグレン，
ダグラス イー． ホルムグレン，
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06—Surface hardening
    • C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2016500127A 2013-03-12 2013-12-18 レーザアニールシステムにおいてエッジプロファイルを制御するためのカスタマイズされた瞳ストップ形状 Active JP6346263B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361777531P 2013-03-12 2013-03-12
US61/777,531 2013-03-12
PCT/US2013/076175 WO2014143298A1 (en) 2013-03-12 2013-12-18 Customized pupil stop shape for control of edge profile in laser annealing systems

Publications (3)

Publication Number Publication Date
JP2016518698A JP2016518698A (ja) 2016-06-23
JP2016518698A5 JP2016518698A5 (enExample) 2017-02-09
JP6346263B2 true JP6346263B2 (ja) 2018-06-20

Family

ID=51526290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016500127A Active JP6346263B2 (ja) 2013-03-12 2013-12-18 レーザアニールシステムにおいてエッジプロファイルを制御するためのカスタマイズされた瞳ストップ形状

Country Status (7)

Country Link
US (2) US9395545B2 (enExample)
EP (1) EP2969368A4 (enExample)
JP (1) JP6346263B2 (enExample)
KR (3) KR102091652B1 (enExample)
CN (4) CN107479203B (enExample)
TW (2) TWI607493B (enExample)
WO (1) WO2014143298A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014143298A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Customized pupil stop shape for control of edge profile in laser annealing systems
CN110133772B (zh) * 2019-06-25 2024-06-11 南京溯远基因科技有限公司 光阑装置及基因测序仪
CN111921174A (zh) * 2020-06-19 2020-11-13 合肥润成体育用品有限公司 一种羽毛球拍手柄制作方法
CN112355488B (zh) * 2020-11-05 2021-12-03 中国工程物理研究院激光聚变研究中心 一种抗激光损伤的软边光阑制备方法

Family Cites Families (27)

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US4832446A (en) * 1986-11-28 1989-05-23 Fuji Photo Co., Ltd. Laser optical system
US4912321A (en) * 1987-03-26 1990-03-27 Texas Instruments Incorporated Radiation scanning system with pupil control
US5059013A (en) * 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
US5473408A (en) * 1994-07-01 1995-12-05 Anvik Corporation High-efficiency, energy-recycling exposure system
US5642287A (en) 1995-03-02 1997-06-24 Sotiropoulos; Nicholas Sculpturing device for laser beams
JPH09326343A (ja) * 1996-06-04 1997-12-16 Nikon Corp 露光方法及び装置
KR980005334A (ko) * 1996-06-04 1998-03-30 고노 시게오 노광 방법 및 노광 장치
US6813003B2 (en) * 2002-06-11 2004-11-02 Mark Oskotsky Advanced illumination system for use in microlithography
JP3760235B2 (ja) * 2003-04-04 2006-03-29 独立行政法人 宇宙航空研究開発機構 半導体レーザ及び半導体レーザの発振方法
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
US7176405B2 (en) * 2005-04-22 2007-02-13 Ultratech, Inc. Heat shield for thermal processing
KR20080088579A (ko) * 2005-12-28 2008-10-02 가부시키가이샤 니콘 노광 장치 및 노광 방법, 디바이스 제조 방법
JP4698460B2 (ja) * 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 レーザアニーリング装置
JP5191674B2 (ja) * 2007-03-05 2013-05-08 株式会社アルバック レーザーアニール装置及びレーザーアニール方法
KR20100019455A (ko) 2007-04-23 2010-02-18 캘리포니아 인스티튜트 오브 테크놀로지 단일-렌즈, 단일-개구, 단일-센서의 3-ｃｄ 영상화 장치
JP2009072789A (ja) * 2007-09-18 2009-04-09 Hamamatsu Photonics Kk レーザ加工装置
JP5327056B2 (ja) * 2008-01-21 2013-10-30 株式会社ニコン 照明装置、露光装置、露光方法及びデバイス製造方法
JP4655136B2 (ja) * 2008-10-28 2011-03-23 ソニー株式会社 対物レンズ、これを用いた光学ピックアップ装置、光記録再生装置及び収差補正方法
JP5385652B2 (ja) * 2009-03-24 2014-01-08 キヤノン株式会社 位置検出装置、露光装置、位置検出方法、露光方法及びデバイス製造方法
CN102063014A (zh) * 2009-11-13 2011-05-18 上海微电子装备有限公司 一种用于微光刻的照明光学系统
JP5595021B2 (ja) * 2009-12-03 2014-09-24 住友重機械工業株式会社 レーザ処理装置
DE102010029089B4 (de) * 2010-05-18 2019-08-29 Carl Zeiss Ag Optisches System zur Kalibrierung einer Lichtquelle
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WO2014143298A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Customized pupil stop shape for control of edge profile in laser annealing systems

Also Published As

Publication number Publication date
KR20190079693A (ko) 2019-07-05
CN107479203A (zh) 2017-12-15
US20140268749A1 (en) 2014-09-18
US20160327801A1 (en) 2016-11-10
KR101994993B1 (ko) 2019-07-01
WO2014143298A1 (en) 2014-09-18
KR102091652B1 (ko) 2020-03-20
KR20170081277A (ko) 2017-07-11
TW201816854A (zh) 2018-05-01
CN107479203B (zh) 2020-12-29
KR101754265B1 (ko) 2017-07-06
EP2969368A1 (en) 2016-01-20
CN107577056B (zh) 2020-04-03
US9395545B2 (en) 2016-07-19
TWI645457B (zh) 2018-12-21
CN105026097A (zh) 2015-11-04
EP2969368A4 (en) 2016-11-16
TWI607493B (zh) 2017-12-01
US10444522B2 (en) 2019-10-15
CN105026097B (zh) 2017-08-29
TW201435994A (zh) 2014-09-16
CN105643107A (zh) 2016-06-08
CN105643107B (zh) 2019-03-01
CN107577056A (zh) 2018-01-12
JP2016518698A (ja) 2016-06-23
KR20150132302A (ko) 2015-11-25

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