KR102091652B1 - 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치 - Google Patents

레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치 Download PDF

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KR102091652B1
KR102091652B1 KR1020197018383A KR20197018383A KR102091652B1 KR 102091652 B1 KR102091652 B1 KR 102091652B1 KR 1020197018383 A KR1020197018383 A KR 1020197018383A KR 20197018383 A KR20197018383 A KR 20197018383A KR 102091652 B1 KR102091652 B1 KR 102091652B1
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South Korea
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aperture
relay
laser
image
optical system
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KR20190079693A (ko
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더글라스 이. 홀름그렌
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어플라이드 머티어리얼스, 인코포레이티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06—Surface hardening
    • C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
KR1020197018383A 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치 Active KR102091652B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361777531P 2013-03-12 2013-03-12
US61/777,531 2013-03-12
PCT/US2013/076175 WO2014143298A1 (en) 2013-03-12 2013-12-18 Customized pupil stop shape for control of edge profile in laser annealing systems

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177017870A Division KR101994993B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치

Publications (2)

Publication Number Publication Date
KR20190079693A KR20190079693A (ko) 2019-07-05
KR102091652B1 true KR102091652B1 (ko) 2020-03-20

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KR1020197018383A Active KR102091652B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치
KR1020157028567A Active KR101754265B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치
KR1020177017870A Active KR101994993B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치

Family Applications After (2)

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KR1020157028567A Active KR101754265B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치
KR1020177017870A Active KR101994993B1 (ko) 2013-03-12 2013-12-18 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치

Country Status (7)

Country Link
US (2) US9395545B2 (enExample)
EP (1) EP2969368A4 (enExample)
JP (1) JP6346263B2 (enExample)
KR (3) KR102091652B1 (enExample)
CN (4) CN107479203B (enExample)
TW (2) TWI607493B (enExample)
WO (1) WO2014143298A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014143298A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Customized pupil stop shape for control of edge profile in laser annealing systems
CN110133772B (zh) * 2019-06-25 2024-06-11 南京溯远基因科技有限公司 光阑装置及基因测序仪
CN111921174A (zh) * 2020-06-19 2020-11-13 合肥润成体育用品有限公司 一种羽毛球拍手柄制作方法
CN112355488B (zh) * 2020-11-05 2021-12-03 中国工程物理研究院激光聚变研究中心 一种抗激光损伤的软边光阑制备方法

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US5059013A (en) 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US6590637B2 (en) 1996-06-04 2003-07-08 Nikon Corporation Exposure apparatus and method
US7176405B2 (en) 2005-04-22 2007-02-13 Ultratech, Inc. Heat shield for thermal processing
US20100245848A1 (en) * 2009-03-24 2010-09-30 Canon Kabushiki Kaisha Position detection apparatus, exposure apparatus, and method of manufacturing device

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US4912321A (en) * 1987-03-26 1990-03-27 Texas Instruments Incorporated Radiation scanning system with pupil control
US5305054A (en) * 1991-02-22 1994-04-19 Canon Kabushiki Kaisha Imaging method for manufacture of microdevices
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US5642287A (en) 1995-03-02 1997-06-24 Sotiropoulos; Nicholas Sculpturing device for laser beams
JPH09326343A (ja) * 1996-06-04 1997-12-16 Nikon Corp 露光方法及び装置
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JP3760235B2 (ja) * 2003-04-04 2006-03-29 独立行政法人 宇宙航空研究開発機構 半導体レーザ及び半導体レーザの発振方法
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
KR20080088579A (ko) * 2005-12-28 2008-10-02 가부시키가이샤 니콘 노광 장치 및 노광 방법, 디바이스 제조 방법
JP4698460B2 (ja) * 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 レーザアニーリング装置
JP5191674B2 (ja) * 2007-03-05 2013-05-08 株式会社アルバック レーザーアニール装置及びレーザーアニール方法
KR20100019455A (ko) 2007-04-23 2010-02-18 캘리포니아 인스티튜트 오브 테크놀로지 단일-렌즈, 단일-개구, 단일-센서의 3-ｃｄ 영상화 장치
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JP4655136B2 (ja) * 2008-10-28 2011-03-23 ソニー株式会社 対物レンズ、これを用いた光学ピックアップ装置、光記録再生装置及び収差補正方法
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JP5595021B2 (ja) * 2009-12-03 2014-09-24 住友重機械工業株式会社 レーザ処理装置
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WO2014143298A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Customized pupil stop shape for control of edge profile in laser annealing systems

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Publication number Priority date Publication date Assignee Title
US5059013A (en) 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US6590637B2 (en) 1996-06-04 2003-07-08 Nikon Corporation Exposure apparatus and method
US7176405B2 (en) 2005-04-22 2007-02-13 Ultratech, Inc. Heat shield for thermal processing
US20100245848A1 (en) * 2009-03-24 2010-09-30 Canon Kabushiki Kaisha Position detection apparatus, exposure apparatus, and method of manufacturing device
US8149423B2 (en) 2009-03-24 2012-04-03 Canon Kabushiki Kaisha Position detection apparatus, exposure apparatus, and method of manufacturing device

Also Published As

Publication number Publication date
KR20190079693A (ko) 2019-07-05
CN107479203A (zh) 2017-12-15
US20140268749A1 (en) 2014-09-18
US20160327801A1 (en) 2016-11-10
KR101994993B1 (ko) 2019-07-01
WO2014143298A1 (en) 2014-09-18
JP6346263B2 (ja) 2018-06-20
KR20170081277A (ko) 2017-07-11
TW201816854A (zh) 2018-05-01
CN107479203B (zh) 2020-12-29
KR101754265B1 (ko) 2017-07-06
EP2969368A1 (en) 2016-01-20
CN107577056B (zh) 2020-04-03
US9395545B2 (en) 2016-07-19
TWI645457B (zh) 2018-12-21
CN105026097A (zh) 2015-11-04
EP2969368A4 (en) 2016-11-16
TWI607493B (zh) 2017-12-01
US10444522B2 (en) 2019-10-15
CN105026097B (zh) 2017-08-29
TW201435994A (zh) 2014-09-16
CN105643107A (zh) 2016-06-08
CN105643107B (zh) 2019-03-01
CN107577056A (zh) 2018-01-12
JP2016518698A (ja) 2016-06-23
KR20150132302A (ko) 2015-11-25

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