TWI645457B - 在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌 - Google Patents

在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌 Download PDF

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Publication number
TWI645457B
TWI645457B TW106136995A TW106136995A TWI645457B TW I645457 B TWI645457 B TW I645457B TW 106136995 A TW106136995 A TW 106136995A TW 106136995 A TW106136995 A TW 106136995A TW I645457 B TWI645457 B TW I645457B
Authority
TW
Taiwan
Prior art keywords
aperture
laser
relay
optical element
ratio
Prior art date
Application number
TW106136995A
Other languages
English (en)
Chinese (zh)
Other versions
TW201816854A (zh
Inventor
霍姆葛倫道格拉斯Ｅ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201816854A publication Critical patent/TW201816854A/zh
Application granted granted Critical
Publication of TWI645457B publication Critical patent/TWI645457B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/06—Surface hardening
    • C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
TW106136995A 2013-03-12 2013-12-23 在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌 TWI645457B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361777531P 2013-03-12 2013-03-12
US61/777,531 2013-03-12

Publications (2)

Publication Number Publication Date
TW201816854A TW201816854A (zh) 2018-05-01
TWI645457B true TWI645457B (zh) 2018-12-21

Family

ID=51526290

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106136995A TWI645457B (zh) 2013-03-12 2013-12-23 在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌
TW102147791A TWI607493B (zh) 2013-03-12 2013-12-23 在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102147791A TWI607493B (zh) 2013-03-12 2013-12-23 在雷射退火系統中用於控制邊緣輪廓的專門光瞳光闌

Country Status (7)

Country Link
US (2) US9395545B2 (enExample)
EP (1) EP2969368A4 (enExample)
JP (1) JP6346263B2 (enExample)
KR (3) KR102091652B1 (enExample)
CN (4) CN105643107B (enExample)
TW (2) TWI645457B (enExample)
WO (1) WO2014143298A1 (enExample)

Families Citing this family (4)

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KR102091652B1 (ko) * 2013-03-12 2020-03-20 어플라이드 머티어리얼스, 인코포레이티드 레이저 어닐링 시스템들에서의 에지 프로파일의 제어를 위한 맞춤화된 퍼필 스톱 장치
CN110133772B (zh) * 2019-06-25 2024-06-11 南京溯远基因科技有限公司 光阑装置及基因测序仪
CN111921174A (zh) * 2020-06-19 2020-11-13 合肥润成体育用品有限公司 一种羽毛球拍手柄制作方法
CN112355488B (zh) * 2020-11-05 2021-12-03 中国工程物理研究院激光聚变研究中心 一种抗激光损伤的软边光阑制备方法

Citations (2)

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US5059013A (en) * 1988-08-29 1991-10-22 Kantilal Jain Illumination system to produce self-luminous light beam of selected cross-section, uniform intensity and selected numerical aperture
US20100245848A1 (en) * 2009-03-24 2010-09-30 Canon Kabushiki Kaisha Position detection apparatus, exposure apparatus, and method of manufacturing device

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Also Published As

Publication number Publication date
KR20150132302A (ko) 2015-11-25
KR20190079693A (ko) 2019-07-05
US10444522B2 (en) 2019-10-15
JP6346263B2 (ja) 2018-06-20
US20140268749A1 (en) 2014-09-18
CN107577056A (zh) 2018-01-12
CN105026097B (zh) 2017-08-29
KR102091652B1 (ko) 2020-03-20
CN105643107B (zh) 2019-03-01
CN105643107A (zh) 2016-06-08
JP2016518698A (ja) 2016-06-23
TWI607493B (zh) 2017-12-01
EP2969368A1 (en) 2016-01-20
KR20170081277A (ko) 2017-07-11
CN107479203B (zh) 2020-12-29
CN105026097A (zh) 2015-11-04
WO2014143298A1 (en) 2014-09-18
TW201816854A (zh) 2018-05-01
KR101754265B1 (ko) 2017-07-06
US9395545B2 (en) 2016-07-19
CN107577056B (zh) 2020-04-03
CN107479203A (zh) 2017-12-15
TW201435994A (zh) 2014-09-16
US20160327801A1 (en) 2016-11-10
KR101994993B1 (ko) 2019-07-01
EP2969368A4 (en) 2016-11-16

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