CN105637589B - 具有减小的感测延迟和改善的感测余量的sram读取缓冲器 - Google Patents

具有减小的感测延迟和改善的感测余量的sram读取缓冲器 Download PDF

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Publication number
CN105637589B
CN105637589B CN201480043596.1A CN201480043596A CN105637589B CN 105637589 B CN105637589 B CN 105637589B CN 201480043596 A CN201480043596 A CN 201480043596A CN 105637589 B CN105637589 B CN 105637589B
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China
Prior art keywords
switch
sram cell
read
bit line
coupled
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CN201480043596.1A
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English (en)
Chinese (zh)
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CN105637589A (zh
Inventor
S-O·郑
Y·杨
S·S·宋
Z·王
C·F·耶普
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Industry Academic Cooperation Foundation of Yonsei University
Qualcomm Inc
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Industry Academic Cooperation Foundation of Yonsei University
Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Architecture (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CN201480043596.1A 2013-08-02 2014-07-21 具有减小的感测延迟和改善的感测余量的sram读取缓冲器 Active CN105637589B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/957,485 US9460777B2 (en) 2013-08-02 2013-08-02 SRAM read buffer with reduced sensing delay and improved sensing margin
US13/957,485 2013-08-02
PCT/US2014/047455 WO2015017164A1 (en) 2013-08-02 2014-07-21 Sram read buffer with reduced sensing delay and improved sensing margin

Publications (2)

Publication Number Publication Date
CN105637589A CN105637589A (zh) 2016-06-01
CN105637589B true CN105637589B (zh) 2018-11-02

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CN201480043596.1A Active CN105637589B (zh) 2013-08-02 2014-07-21 具有减小的感测延迟和改善的感测余量的sram读取缓冲器

Country Status (6)

Country Link
US (1) US9460777B2 (enExample)
EP (1) EP3028281B1 (enExample)
JP (1) JP6096991B2 (enExample)
KR (1) KR101779553B1 (enExample)
CN (1) CN105637589B (enExample)
WO (1) WO2015017164A1 (enExample)

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EP2887355A1 (en) * 2013-12-20 2015-06-24 IMEC vzw Data storage cell and memory arrangement
US20210027833A1 (en) * 2017-07-28 2021-01-28 Masud H. Chowdhury 8t static random access memory
US10438654B2 (en) * 2017-09-22 2019-10-08 Qualcomm Incorporated Transpose static random access memory (SRAM) bit cells configured for horizontal and vertical read operations
WO2019220259A1 (ja) * 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 記憶装置、半導体装置、および電子機器
WO2020142743A1 (en) 2019-01-05 2020-07-09 Synopsys, Inc. Enhanced read sensing margin and minimized vdd for sram cell arrays
CN109920459B (zh) * 2019-01-10 2021-01-15 中国人民武装警察部队海警学院 一种完全非对称的亚阈值单端9管存储单元
CN111883192B (zh) * 2020-07-20 2023-02-03 安徽大学 基于9t sram单元在内存实现汉明距离计算的电路及9t sram单元
CN112069768B (zh) * 2020-09-08 2024-07-16 飞腾信息技术有限公司 一种针对双端口sram输入输出延时优化的方法
CN112382326B (zh) * 2020-12-11 2023-11-17 北京中科芯蕊科技有限公司 一种亚阈值双电源sram读辅助电路
WO2022266541A2 (en) * 2021-06-18 2022-12-22 University Of Southern California Augmented memory computing: a new pathway for efficient ai computations
US12249367B2 (en) 2022-04-13 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Write assist circuit for memory device
CN114743580B (zh) * 2022-06-13 2022-09-02 中科南京智能技术研究院 一种电荷共享存内计算装置

Citations (2)

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CN101785064A (zh) * 2008-08-07 2010-07-21 松下电器产业株式会社 半导体存储装置
WO2012119988A1 (en) * 2011-03-04 2012-09-13 Imec Local write and read assist circuitry for memory device

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JPH0636315B2 (ja) 1983-12-23 1994-05-11 株式会社日立製作所 半導体メモリ
JP2004047003A (ja) * 2002-07-15 2004-02-12 Renesas Technology Corp 記憶装置
US7075842B2 (en) * 2004-02-13 2006-07-11 Fujitsu Limited Differential current-mode sensing methods and apparatuses for memories
JP4528044B2 (ja) * 2004-07-13 2010-08-18 富士通セミコンダクター株式会社 半導体装置
US7106620B2 (en) * 2004-12-30 2006-09-12 International Business Machines Corporation Memory cell having improved read stability
JP2007213699A (ja) * 2006-02-09 2007-08-23 Toshiba Corp 半導体記憶装置
US20070242498A1 (en) * 2006-04-13 2007-10-18 Anantha Chandrakasan Sub-threshold static random access memory
US7400523B2 (en) * 2006-06-01 2008-07-15 Texas Instruments Incorporated 8T SRAM cell with higher voltage on the read WL
US7502273B2 (en) * 2006-09-27 2009-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Two-port SRAM with a high speed sensing scheme
US20090161410A1 (en) * 2007-12-21 2009-06-25 Texas Instruments Inc. Seven transistor sram cell
US7660150B2 (en) * 2007-12-31 2010-02-09 Texas Instruments Incorporated Memory cell having improved write stability
US7606062B2 (en) * 2007-12-31 2009-10-20 Intel Corporation Ultra low voltage and minimum operating voltage tolerant register file
JP2009272023A (ja) 2008-05-12 2009-11-19 Toshiba Corp 半導体記憶装置
US7961499B2 (en) 2009-01-22 2011-06-14 Qualcomm Incorporated Low leakage high performance static random access memory cell using dual-technology transistors
US7986566B2 (en) * 2009-04-01 2011-07-26 Texas Instruments Incorporated SRAM cell with read buffer controlled for low leakage current
US8144540B2 (en) * 2009-04-14 2012-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Two-port 8T SRAM design
EP2387039A1 (en) 2010-05-12 2011-11-16 Stichting IMEC Nederland Hierarchical buffered segmented bit-lines based sram
US8208314B2 (en) * 2010-06-01 2012-06-26 Aptina Imaging Corporation Sequential access memory elements
US8654575B2 (en) 2010-07-16 2014-02-18 Texas Instruments Incorporated Disturb-free static random access memory cell
US8947912B2 (en) * 2010-07-20 2015-02-03 University Of Virginia Licensing & Ventures Group Memory cell including unidirectional gate conductors and contacts
US8531873B2 (en) * 2011-05-08 2013-09-10 Ben-Gurion University Of The Negev Research And Development Authority Ultra low power SRAM cell circuit with a supply feedback loop for near and sub threshold operation
JP2013206512A (ja) * 2012-03-29 2013-10-07 Kyushu Institute Of Technology 半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101785064A (zh) * 2008-08-07 2010-07-21 松下电器产业株式会社 半导体存储装置
WO2012119988A1 (en) * 2011-03-04 2012-09-13 Imec Local write and read assist circuitry for memory device

Also Published As

Publication number Publication date
US9460777B2 (en) 2016-10-04
JP2016527654A (ja) 2016-09-08
WO2015017164A1 (en) 2015-02-05
EP3028281A1 (en) 2016-06-08
CN105637589A (zh) 2016-06-01
US20150036417A1 (en) 2015-02-05
JP6096991B2 (ja) 2017-03-15
KR20160037202A (ko) 2016-04-05
EP3028281B1 (en) 2017-12-20
KR101779553B1 (ko) 2017-09-18

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