CN105633015A - 一种阵列基板的制造方法、阵列基板及显示装置 - Google Patents

一种阵列基板的制造方法、阵列基板及显示装置 Download PDF

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CN105633015A
CN105633015A CN201610134916.5A CN201610134916A CN105633015A CN 105633015 A CN105633015 A CN 105633015A CN 201610134916 A CN201610134916 A CN 201610134916A CN 105633015 A CN105633015 A CN 105633015A
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array substrate
passivation layer
chock insulator
insulator matter
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CN105633015B (zh
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沈世妃
李正勋
宋泳珍
房毛毛
候建新
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BOE Technology Group Co Ltd
Hefei BOE Display Lighting Co Ltd
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Hefei BOE Display Lighting Co Ltd
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Abstract

本发明公开了一种阵列基板的制造方法、阵列基板及显示装置，以减少彩膜工艺的加工工序，并进一步减少显示装置的制造工序，节省生产成本和时间。阵列基板的制造方法包括：在衬底基板上形成薄膜晶体管；通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在所述钝化层的前侧形成隔垫物。采用该方法制造阵列基板，无需在彩膜基板背侧制备隔垫物，减少了彩膜工艺的加工工序，进而减少了显示装置的制备工序，节省了生产成本和加工时间。

Description

一种阵列基板的制造方法、阵列基板及显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的制造方法、阵列基板及显示装置。
背景技术
在平板显示装置中，薄膜晶体管液晶显示器(ThinFilmTransistorLiquidCrystalDisplay，简称TFT-LCD)具有体积小、功耗低、制造成本相对较低和无辐射等特点，在当前的平板显示器市场占据了主导地位。
目前，TFT-LCD的显示模式主要有TN(TwistedNematic，扭曲向列)模式、VA(VerticalAlignment，垂直取向)模式、IPS(In-Plane-Switching，平面方向转换)模式和ADSDS(ADvancedSuperDimensionSwitch，高级超维场转换，简称ADS)模式等。
在上述显示模式的TFT-LCD的制备过程中，位于阵列基板和彩膜基板之间的隔垫物(PhotoSpacer，简称PS)的制备是一道十分重要的工序。隔垫物可以确保阵列基板与彩膜基板之间的间隙和均匀性，同时起到对阵列基板和彩膜基板的支撑作用。
现有技术中，隔垫物均是在彩膜工艺中形成，如图1所示，现有的彩膜基板包括：彩膜衬底基板10；位于彩膜衬底基板10背侧的黑矩阵11；位于黑矩阵11背侧的包含红、绿、蓝三种颜色的彩膜滤光片12；位于彩膜滤光片背侧的保护涂层13；以及位于保护涂层13背侧的隔垫物14。
现有技术存在的缺陷在于，彩膜工艺的加工工序较多，进而导致显示装置的制造工艺较为复杂，浪费时间和生产成本。
发明内容
本发明的目的是提供一种阵列基板的制造方法、阵列基板及显示装置，以减少彩膜工艺的加工工序，并进一步减少显示装置的制造工序，节省生产成本和时间。
本发明实施例提供一种阵列基板的制造方法，包括：
在衬底基板上形成薄膜晶体管；
通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在所述钝化层的前侧形成隔垫物。
采用该方法制造阵列基板，无需在彩膜基板背侧制备隔垫物，减少了彩膜工艺的加工工序，进而减少了显示装置的制造工序，节省了生产成本和加工时间。
优选的，所述通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在所述钝化层的前侧形成隔垫物，具体包括：
在薄膜晶体管前侧形成钝化层薄膜；
在钝化层薄膜前侧形成光刻胶；
使用具有全透光区、半透光区和遮光区的掩模板对基板进行曝光，其中，全透光区与基板预形成过孔的区域位置相对，遮光区与基板预形成隔垫物的区域位置相对；
对曝光后的基板进行显影处理；
对显影处理后的基板进行刻蚀和灰化处理，形成具有过孔的钝化层及在所述钝化层的前侧形成隔垫物。
采用该方法制造阵列基板，减少了彩膜工艺的加工工序，同时，采用半色调掩模构图工艺制备隔垫物，刻蚀和灰化可以在同一工序进行，相比现有技术，减少了刻蚀之后的光刻胶剥离工序，因此，显示装置的制造工序得到了简化，大大地节约了加工时间和生产成本，具有良好的经济效益和发展前景。
优选的，所述阵列基板的制造方法还包括：在所述隔垫物的前侧形成覆盖所述隔垫物表面的保护层。
更优的，在形成所述保护层的同时，形成与所述保护层材质相同的像素电极，所述像素电极穿过所述过孔与所述薄膜晶体管的源极连接。采用该方法，可以在同一次掩模构图工艺中形成保护层和像素电极，因此，可以大大简化阵列基板的制造工艺，进一步缩短工艺时间。
本发明实施例提供一种阵列基板，包括钝化层，所述钝化层的前侧具有隔垫物。
采用本发明的技术方案，彩膜基板背侧无需制备隔垫物，因而可以减少彩膜工艺的加工工序，并进一步减少显示装置的制造工序，节省生产成本和加工时间。
优选的，所述隔垫物为有机膜隔垫物。
优选的，所述隔垫物为光刻胶隔垫物。
更优的，所述阵列基板还包括覆盖所述隔垫物的表面的保护层。
优选的，所述阵列基板还包括位于所述钝化层背侧的薄膜晶体管以及位于所述钝化层前侧的像素电极，其中：所述钝化层具有与薄膜晶体管的源极位置相对的过孔，所述像素电极穿过所述过孔与所述薄膜晶体管的源极连接；所述保护层与所述像素电极的材质相同。在该技术方案中，可以在同一次掩模构图工艺中形成保护层和像素电极，因此可以简化阵列基板的制造工艺，进一步缩短工艺时间。
本发明实施例还提供了一种显示装置，包括上述任一技术方案所述的阵列基板。该显示装置的制造工序较为简单，生产成本较低，加工时间较短。
附图说明
图1为现有技术彩膜基板的结构示意图；
图2为本发明实施例阵列基板的制造方法流程图；
图3为图2中步骤101的具体步骤流程图；
图4为图2中步骤102的具体步骤流程图；
图5为本发明另一实施例阵列基板的制造方法流程图；
图6a～6c为本发明实施例基板的半色调掩模工艺示意图；
图7为本发明实施例阵列基板的截面示意图；
图8为本发明实施例阵列基板的俯视图。
现有技术附图标记说明：
10-彩膜衬底基板
11-黑矩阵
12-彩色滤光片
13-保护涂层
14-隔垫物
本发明实施例附图标记说明：
30-衬底基板
31-栅线层
32-栅绝缘层
33-数据线层
34-钝化层
40-遮光区
41-半透光区
330-源极
340-过孔
35-隔垫物
36-像素电极
37-保护层
具体实施方式
为了减少彩膜工艺的加工工序，并进一步减少显示装置的制造工序，节省生产成本和时间，本发明实施例提供了一种阵列基板的制造方法、阵列基板及显示装置。
如图2所示，本发明实施例提供的阵列基板的制造方法，包括：
步骤101：在衬底基板上形成薄膜晶体管；
步骤102：通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在钝化层的前侧形成隔垫物。
在本发明各实施例中，所述“前侧”可以理解为显示装置中该部件靠近观看者的一侧，相应的，所述“背侧”可以理解为显示装置中该部件远离观看者的一侧，以下若无特殊说明，“前侧”和“背侧”均按此定义理解。
采用该方法制造阵列基板，无需在彩膜基板背侧制备隔垫物，减少了彩膜工艺的加工工序，进而减少了显示装置的制造工序，节省了生产成本和加工时间。
其中，如图3所示，步骤101具体包括：
步骤1011：在衬底基板上沉积栅金属薄膜，通过第一次掩模构图工艺形成栅极和栅极扫描线图形；
栅金属薄膜可以采用铝、铬、钨、钽、钛、钼或钼镍的单层薄膜，也可以采用由上述单层薄膜构成的多层复合薄膜，对于金属薄膜，沉积方式采用物理气相淀积的方式成膜。
步骤1012：在完成步骤1011的基板上依次沉积栅极绝缘层和有源层薄膜，通过第二次掩模构图工艺形成有源层图形；
栅极绝缘层的绝缘成分可以为氮化硅等，采用化学气相淀积的方式成膜；有源层薄膜材质可以为非晶硅、氢化非晶硅等，采用化学气相淀积法成膜。
步骤1013：在完成步骤1012的基板上沉积源漏电极金属薄膜，通过第三次掩模构图工艺形成源极、漏极和数据扫描线图形；
源漏电极金属薄膜可以采用铝、铬、钨、钽、钛、钼或钼镍的单层薄膜，也可以采用由上述单层薄膜构成的多层复合薄膜，对于金属薄膜，沉积方式采用物理气相淀积的方式成膜。
结合图4和6a至图6c所示，步骤102具体可以为：
步骤1021：在薄膜晶体管前侧形成钝化层薄膜；
步骤1022：在钝化层薄膜前侧形成光刻胶，如图6a所示；
步骤1023：使用具有全透光区、半透光区41和遮光区40的掩模板对基板进行曝光，其中，全透光区与基板预形成过孔的区域位置相对，遮光区与基板预形成隔垫物的区域位置相对，如图6b所示；
步骤1024：对曝光后的基板进行显影处理；
步骤1025：对显影处理后的基板进行刻蚀和灰化处理，形成具有过孔的钝化层及在钝化层的前侧形成隔垫物，如图6c所示。
采用该方法制造阵列基板，减少了彩膜工艺的加工工序，同时，采用半色调掩模构图工艺制备隔垫物，刻蚀和灰化可以在同一工序进行，相比现有技术，减少了刻蚀之后的光刻胶剥离工序，因此，TFT-LCD的制备工序得到了简化，大大地节约了加工时间和生产成本，具有良好的经济效益和发展前景。
在本发明另一实施例中，阵列基板的制造方法还可包括：
在隔垫物的前侧形成覆盖隔垫物表面的保护层。在该方法实施例中，由于隔垫物的表面具有保护层，在后续采用掩模构图工艺形成其它层结构时，保护层可以保护隔垫物不受光刻胶剥离液的影响。
请参考图5所示，在本发明一个具体实施例中，阵列基板的制造方法包括：
步骤101：在衬底基板上形成薄膜晶体管；
步骤102：通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在钝化层的前侧形成隔垫物。
步骤103：在隔垫物的前侧形成覆盖隔垫物表面的保护层，同时，形成与保护层材质相同的像素电极，像素电极穿过过孔与薄膜晶体管的源极连接。
采用该方法，可以在同一次掩模构图工艺中形成保护层和像素电极，因此，可以大大简化阵列基板的制造工艺，进一步缩短工艺时间。
如图7所示，本发明实施例提供了一种阵列基板，包括钝化层34，钝化层34的前侧具有隔垫物35。
本发明所述阵列基板的类型不限，例如可以为底栅型阵列基板(此时有源层位于栅线层的上方)或者顶栅型阵列基板(此时有源层位于栅线层的上方)等。阵列基板各膜层的结构位置可以有很多种变化，只要制作出显示装置驱动所必要的元素(比如栅极、有源层、源极、漏极和像素电极等)，确保显示装置正常驱动即可。
以底栅型阵列基板为例，请参照图7和图8所示，本发明实施例的阵列基板具体包括：
衬底基板30；
位于衬底基板30前侧的栅线层31；
位于栅线层31前侧的栅绝缘层32；
位于栅绝缘层32前侧的有源层；
位于有源层前侧的数据线层33；
位于数据线层33前侧的钝化层34，钝化层34具有过孔340且钝化层34的前侧具有隔垫物35；
通过过孔340与数据线层33的源极330连接的像素电极36。
在本发明实施例中，彩膜基板背侧无需制备隔垫物，因而可以减少彩膜工艺的加工工序，并进一步减少显示装置的制造工序，节省生产成本和加工时间。
其中，像素电极36的具体材质不限，例如像素电极的材质可以为金属氧化物，如氧化铟锡(ITO)等，像素电极的材质还可以为金属，如钼-锑金属层等。隔垫物35的具体类型也不限，例如可以为有机膜隔垫物或者光刻胶隔垫物等等。
当隔垫物为光刻胶隔垫物时，阵列基板还包括覆盖隔垫物表面的保护层37。由于隔垫物的表面具有保护层，在后续采用掩模构图工艺形成其它层结构时，保护层可以保护隔垫物不受光刻胶剥离液的影响。
当隔垫物为有机膜隔垫物时，由于有机膜与光刻胶剥离液不发生反应，后续的掩模构图工艺对有机膜隔垫物无影响，因此，有机膜隔垫物的表面无需覆盖保护层。
在本发明的一个优选实施例中，保护层37与像素电极36的材质相同。在该实施例中，可以在同一次掩模构图工艺中形成保护层和像素电极，因此可以简化阵列基板的制造工艺，进一步缩短工艺时间。
本发明实施例还提供了一种显示装置，包括前述任一实施例所述的阵列基板。其中，显示装置的具体类型不限，例如可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的制备工序较为简单，生产成本较低，加工时间较短。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种阵列基板的制造方法，其特征在于，所述方法包括：
在衬底基板上形成薄膜晶体管；
通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在所述钝化层的前侧形成隔垫物。
2.如权利要求1所述的制造方法，其特征在于，所述通过半色调掩模构图工艺，在薄膜晶体管的前侧形成具有过孔的钝化层，及在所述钝化层的前侧形成隔垫物，具体包括：
在薄膜晶体管前侧形成钝化层薄膜；
在钝化层薄膜前侧形成光刻胶；
使用具有全透光区、半透光区和遮光区的掩模板对基板进行曝光，其中，全透光区与基板预形成过孔的区域位置相对，遮光区与基板预形成隔垫物的区域位置相对；
对曝光后的基板进行显影处理；
对显影处理后的基板进行刻蚀和灰化处理，形成具有过孔的钝化层及在所述钝化层的前侧形成隔垫物。
3.如权利要求2所述的制造方法，其特征在于，所述制造方法还包括：在所述隔垫物的前侧形成覆盖所述隔垫物表面的保护层。
4.如权利要求3所述的制造方法，其特征在于，在形成所述保护层的同时，形成与所述保护层材质相同的像素电极，所述像素电极穿过所述过孔与所述薄膜晶体管的源极连接。
5.一种阵列基板，其特征在于，包括钝化层，所述钝化层的前侧具有隔垫物。
6.如权利要求5所述的阵列基板，其特征在于，所述隔垫物为有机膜隔垫物。
7.如权利要求5所述的阵列基板，其特征在于，所述隔垫物为光刻胶隔垫物。
8.如权利要求7所述的阵列基板，其特征在于，所述阵列基板还包括覆盖所述隔垫物的表面的保护层。
9.如权利要求8所述的阵列基板，其特征在于，所述阵列基板还包括位于所述钝化层背侧的薄膜晶体管以及位于所述钝化层前侧的像素电极，其中：所述钝化层具有与薄膜晶体管的源极位置相对的过孔，所述像素电极穿过所述过孔与所述薄膜晶体管的源极连接；所述保护层与所述像素电极的材质相同。
10.一种显示装置，其特征在于，包括如权利要求5～9任一项所述的阵列基板。
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