CN105632985B - 元件的转移方法 - Google Patents

元件的转移方法 Download PDF

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CN105632985B
CN105632985B CN201510593959.5A CN201510593959A CN105632985B CN 105632985 B CN105632985 B CN 105632985B CN 201510593959 A CN201510593959 A CN 201510593959A CN 105632985 B CN105632985 B CN 105632985B
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adhesion coating
transfer method
adhesion
substrate
transposition head
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CN105632985A (zh
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张珮瑜
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Mikro Mesa Technology Co Ltd
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Abstract

本发明公开了一种元件的转移方法，其包含以下步骤。首先，于承载基板上涂布粘着层。接着，放置元件于粘着层上，因而使元件暂时粘附于粘着层上。然后，降低粘着层对于元件的粘着力，但仍维持元件于粘着层上的位置在可控制的范围内，其中粘着层的杨氏系数小于或等于30GPa。最后，在粘着层的粘着力降低后，将元件自粘着层转移至接收基板。借此，本发明的元件的转移方法借由粘着层的应用，增加元件对位的能力与降低元件损坏的机率。

Description

元件的转移方法
技术领域
本发明涉及一种元件的转移方法。
背景技术
整合与封装为射频微机电系统微动开关(Radio frequencymicroelectromechanical system microswitches，RF MEMS microswitches)、发光二极体显示系统、微机电震荡器与石英震荡器等微元件在量产时所遭遇的主要困难。
传统转移微元件的方法为借由基板接合(Wafer Bonding)将微元件自转移基板转移至接收基板。转移方法的其中一种实施方法为直接转移，也就是直接将微元件阵列自转移基板接合至接收基板，之后再将转移基板移除。另一种实施方法为间接转移。此方法包含两次接合/剥离的步骤，首先，转移基板自施体基板提取微元件阵列，接着转移基板再将微元件阵列接合至接收基板，最后再把转移基板移除。
发明内容
本发明的目的在于提供一种元件的转移方法，借由第一粘着层的应用，增加元件对位的能力与降低元件损坏的机率。
根据本发明一实施方式，一种元件的转移方法包含以下步骤。首先，于第一承载基板上涂布第一粘着层。接着，放置元件于第一粘着层上，因而使元件暂时粘附于第一粘着层上。然后，降低第一粘着层对于元件的粘着力，但同时维持元件于第一粘着层的控制位置，其中第一粘着层的杨氏系数小于或等于30GPa。最后，在第一粘着层的粘着力降低后，将元件自第一粘着层转移至接收基板。
本发明上述实施方式借由第一粘着层的粘着力与缓冲能力，让暂时粘附于第一粘着层上的元件的位置，在进行工艺时将会维持在可控制的范围内，因此转置头可轻易地与元件对位。此外，在转置头接触元件时，转置头施加于元件上的冲击力将会被粘着层所吸收，因此元件将不会因为转置头的撞击而损坏。于是，工艺良率将得以提升。
附图说明
图1至图6绘示依照本发明一实施方式的元件转移方法的中间步骤的剖面示意图。
图7与图8绘示依照本发明另一实施方式的元件转移方法的中间步骤的剖面示意图。
图9A绘示依照本发明一实施方式的转置头将要接触元件时的剖面示意图。
图9B绘示依照本发明一实施方式的转置头接触元件时的剖面示意图。
图10A绘示依照本发明一实施方式的转置头将要接触元件时的剖面示意图。
图10B绘示依照本发明一实施方式的转置头接触元件时的剖面示意图。
具体实施方式
以下将以图式公开本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化图式起见，一些现有惯用的结构与元件在图式中将以简单示意的方式绘示。
图1至图6绘示依照本发明一实施方式的元件转移方法的中间步骤的剖面示意图。本发明将提供一种元件400的转移方法。具体而言，上述的元件400可为发光二极体。更具体地说，元件400可为薄型发光二极体(Thin Light-emitting Diode)。元件400的厚度可为约0.5微米至约100微米。元件400的形状可为圆柱体，且圆柱体的半径可为约0.5微米至约500微米，但并不限于此。在其他实施方式中，元件400可为三角柱体、立方体、长方体、六角柱体、八角柱体或者其他多角柱体，且元件400可为晶片。
如图1所绘示，制造者可于成长基板510上形成元件400。
接着，如图2所绘示，制造者可于承载基板110上涂布粘着层120。然后，将元件400与成长基板510翻转180°，并将元件400与成长基板510放置于粘着层120上，因而使元件400暂时粘附于粘着层120上。
具体而言，承载基板110可为刚性基板。更具体地说，承载基板110的材质可为玻璃、硅、聚碳酸酯(Polycarbonate，PC)、丙烯腈-丁二烯-苯乙烯(Acrylonitrile ButadieneStyrene，ABS)或其任意组合。应了解到，以上所举的承载基板110的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择承载基板110的具体实施方式。
具体而言，粘着层120的材质可为具粘性的有机材质(Adhesion CapableOrganic)。更具体地说，粘着层120的材质可为环氧树脂、聚甲基丙烯酸甲酯(Polymethylmethacrylate，PMMA)、聚硅氧烷、硅胶或其任意组合。应了解到，以上所举的粘着层120的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择粘着层120的具体实施方式。
粘着层120的厚度为约1微米至约100微米。粘着层120对于每个元件400的粘着力为约0.01Nt/25mm至约100Nt/25mm。粘着层120的涂布可借由旋转涂布机、狭缝涂布机或其任意组合达成。应了解到，以上所举的粘着层120的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择粘着层120的具体实施方式。
如图2与图3所绘示，制造者可自暂时粘附于粘着层120的元件400上移除成长基板510。具体而言，成长基板510可借由激光剥离工艺、化学剥离工艺或其任意组合移除，但并不限于此。在其他实施方式中，制造者也可以选择其他方法移除成长基板510。
然后，制造者可降低粘着层120对于元件400的粘着力，但仍维持元件400于粘着层120上的位置在可控制的范围内。具体而言，粘着层120在粘着力降低后的粘着力仍可大于每个元件400的重量的十倍，所以元件400仍然会被粘着层120维持在可控制的范围内。
具体而言，粘着层120的粘着力可借由电场、电磁波、热、超音波、机械力、压力或其任意组合降低。应了解到，以上所举的降低粘着层120的粘着力的方法仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择降低粘着层120的粘着力的方法。
在本实施方式中，粘着层120对于每个元件400的粘着力为20Nt/25mm，粘着层120对于每个元件400降低后的粘着力为0.5Nt/25mm。
在粘着层120的粘着力降低之前或降低之后，粘着层120的杨氏系数均小于或等于30GPa。应了解到，以上所举的粘着层120的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择粘着层120的具体实施方式。
具体而言，元件400为已经进行过晶片切割工艺的元件，但不限于此。在其他实施方式中，元件400可为尚未进行晶片切割工艺的元件。制造者可以选择在将元件400放置于粘着层120上之后，但在粘着层120的粘着力降低之前对于元件400进行晶片切割工艺。
在进行晶片切割工艺时，若线性地切割元件400，将使元件400的形状成为立方体或长方体。晶片切割工艺可利用激光或其他方法进行。或者，在进行晶片切割工艺时，制造者可非线性地切割元件400，使得元件400的形状成为五角柱体、六角柱体、八角柱体、多角柱体或圆柱体。
晶片切割工艺也可借由使用感应耦合电浆(Inductively Coupled Plasma，ICP)、湿蚀刻或其他方法进行。当元件400的形状不为长方体时，将可避免元件400的漏电流产生，于是元件400的发光效率得以增加。
在粘着层120的粘着力降低前，制造者可对暂时粘附于粘着层120的元件400进行至少一个工艺(例如激光剥离工艺或晶片切割工艺)。由于粘着层120对元件400仍具有粘着力，因此在进行工艺时，元件400将仍会被粘着层120维持在可控制的区域内，或者说元件400之间的相对位置仍会被粘着层120维持在可控制的范围内。此外，粘着层120也可作为用来吸收外力(例如机械力)的缓冲层。
如图4所绘示，制造者可将转置头200放在元件400上，且让转置头200接触元件400。在此同时，粘着层120将产生形变，借此在转置头200接触元件400时吸收转置头200施加于元件400上的冲击力。
如图5所绘示，制造者可致动转置头200进而对至少部分的元件400(即元件400a)产生吸力。接着，借由转置头200自粘着层120提取元件400a。在本实施方式中，元件400a将转置至接收基板上，但并不限于此。在其他实施方式中，元件400a可能是受损元件，因此元件400a在被提取后将被丢弃。
然后，如图6所绘示，制造者可将元件400a释放于接收基板310上。具体而言，元件400a将分别释放于接收基板310的特定位置上。
转置头200的吸力可为静电力、空气压差所形成的力、粘着力、机械力或其任意组合。应了解到，以上所举的转置头200的具体实施方式仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择转置头200的具体实施方式。
在本实施方式中，接收基板310可为主动元件阵列基板，因此接收基板310与元件400a将形成显示面板，但并不限于此。在其他实施方式中，接收基板310与元件400a也可以形成发光装置。
另外，仅有元件400a(部分的元件400)为转置于接收基板310上，但并不限于此。在其他实施方式中，所有的元件400皆转置于接收基板310上。
因为粘着层120的粘着力与缓冲能力，每个暂时粘附于粘着层120上的元件400，在进行工艺时将会被维持在可控制的范围内，因此转置头200轻易地与元件400对位。此外，在转置头200接触元件400时，转置头200施加于元件400上的冲击力将可被粘着层120吸收，因此元件400将不会因为转置头200的撞击而损坏。于是，工艺良率将得以提升。
图7与图8绘示依照本发明另一实施方式的元件转移方法的中间步骤的剖面示意图。如图3所绘示，假如暂时粘附于粘着层120上的元件400需要翻转180°，则可进行额外的步骤。
如图3与图7所绘示，制造者可于承载基板610上涂布粘着层620。接着，在粘着层120对元件400的粘着力降低后，将粘着层120与承载基板110翻转180°，并让元件400接触粘着层620。在此同时，粘着层120、620将产生形变，借此在元件400接触粘着层620时，吸收粘着层120、620施加于元件400上的冲击力。
然后，如图8所绘示，因为粘着层620施加于元件400的粘着力，让元件400暂时粘附于粘着层620上。接着，将粘着层120与承载基板110移除。之后的工艺与图4至图6的工艺类似。
具体而言，由于粘着层120在粘着力降低后的粘着力仍大于元件400的重量，因此在粘着层120翻转180°时与进行相关工艺时，元件400不会自粘着层120上掉落。
粘着层120也具有校准的功能。图9A绘示依照本发明一实施方式的转置头200将要接触元件400时的剖面示意图。图9B绘示依照本发明一实施方式的转置头200接触元件400时的剖面示意图。如图9A所绘示，在元件400暂时粘附于粘着层120时，元件400可能不是平整地设置于粘着层120上。如图9B所绘示，当转置头200接触元件400时，粘着层120将会产生形变而使元件400平整地对齐于转置头200。由于元件400平整地对齐于转置头200，因此转置头200将得以轻易地提取元件400。
图10A绘示依照本发明一实施方式的转置头200将要接触元件400时的剖面示意图。图10B绘示依照本发明一实施方式的转置头200接触元件400时的剖面示意图。如图10A所绘示，不同的元件400可能不是设置于相同的高度，于是部分设置于较低高度的元件400与转置头200之间将产生间距，如果没有粘着层120，将可能会使得这些元件400可能无法被转置头200所提取。如图10B所绘示，当转置头200接触元件400时，粘着层120将产生形变而使元件400平整地对齐于转置头200。由于元件400之间不再具有高度差，因此转置头200与元件400之间也就不会产生间距，让转置头200的吸力可以正常地施加于元件400上。也就是说，由于元件400可以平整地对齐于转置头200，因此转置头200将得以轻易地提取元件400。
本发明上述实施方式借由粘着层120的粘着力与缓冲能力，让暂时粘附于粘着层120上的元件400的位置，在进行工艺时将会维持在可控制的范围内，因此转置头200可轻易地与元件400对位。此外，在转置头200接触元件400时，转置头200施加于元件400上的冲击力将会被粘着层120所吸收，因此元件400将不会因为转置头200的撞击而损坏。于是，工艺良率将得以提升。
虽然本发明已经以实施方式公开如上，然其并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作各种变动与润饰，因此本发明的保护范围当视权利要求所界定者为准。

Claims (23)

1.一种元件的转移方法，其特征在于，所述元件的转移方法包含：
在第一承载基板上涂布第一粘着层；
放置至少一个元件于所述第一粘着层上，使得所述元件暂时粘附于所述第一粘着层上；
降低所述第一粘着层对于所述元件的粘着力，但仍维持所述元件于所述第一粘着层上的位置在能够控制的范围内，且降低后的所述粘着力大于所述元件的重量，其中所述第一粘着层的杨氏系数小于或等于30GPa；
在第二承载基板上涂布第二粘着层；以及
在所述第一粘着层的粘着力降低后，将所述元件自所述第一粘着层转移至所述第二承载基板，其中所述转移包含：
将所述第一承载基板翻转倒置；及
让所述元件接触所述第二粘着层，使得所述元件转移至所述第二粘着层且暂时粘附于所述第二粘着层上。
2.如权利要求1所述的元件的转移方法，其特征在于，所述元件的转移方法还包含：
在所述第一粘着层的粘着力降低前，对暂时粘附于所述第一粘着层的所述元件进行至少一个工艺。
3.如权利要求1所述的元件的转移方法，其特征在于，所述元件为发光二极体与设置于所述发光二极体上的成长基板；以及
所述元件的转移方法还包含：
在所述第一粘着层的粘着力降低前，自暂时粘附于所述第一粘着层的所述发光二极体上移除所述成长基板。
4.如权利要求3所述的元件的转移方法，其特征在于，移除所述成长基板的步骤包含激光剥离工艺、化学剥离工艺或其任意组合。
5.如权利要求1所述的元件的转移方法，其特征在于，所述元件为尚未进行晶片切割工艺的元件；以及
所述的元件的转移方法还包含：
在所述第一粘着层的粘着力降低前，对暂时粘附于所述第一粘着层的所述元件进行晶片切割工艺。
6.如权利要求5所述的元件的转移方法，其特征在于，所述晶片切割工艺包含线性地切割所述元件。
7.如权利要求5所述的元件的转移方法，其特征在于，所述晶片切割工艺包含非线性地切割所述元件。
8.如权利要求1所述的元件的转移方法，其特征在于，所述元件为已经进行过晶片切割工艺的元件。
9.如权利要求1所述的元件的转移方法，其特征在于，还包含将所述元件转移至接收基板的步骤，所述步骤包含：
将转置头放在所述元件上；
让所述转置头接触所述元件，在所述转置头接触所述元件时，所述第二粘着层将产生形变，借此吸收所述转置头施加于所述元件上的冲击力；
致动所述转置头进而对所述元件产生吸力；
借由所述转置头提取所述元件；以及
将所述元件释放于所述接收基板上。
10.如权利要求9所述的元件的转移方法，其特征在于，所述吸力为静电力、粘着力、机械力或其任意组合。
11.如权利要求1所述的元件的转移方法，其特征在于，还包含将所述元件转移至接收基板的步骤，所述步骤包含：
将转置头放在所述元件上；
让所述转置头接触所述元件，其中所述第二粘着层使所述元件平整地对齐于所述转置头；
致动所述转置头进而对所述元件产生吸力；
借由所述转置头提取所述元件；以及
将所述元件释放于所述接收基板上。
12.如权利要求1所述的元件的转移方法，其特征在于，所述元件的数量为多个；以及
还包含将所述元件转移至接收基板的步骤，所述步骤包含：
将转置头放在所述元件上；
让所述转置头接触所述元件，其中所述第二粘着层使所述元件平整地对齐于所述转置头；
致动所述转置头进而对于至少部分所述元件产生吸力；
借由所述转置头提取部分所述元件；以及
将部分所述元件释放于所述接收基板上。
13.如权利要求9所述的元件的转移方法，其特征在于，所述元件的数量为多个；
其中降低所述第一粘着层对于所述元件的粘着力的步骤包含：
降低所述第一粘着层对于所述元件的粘着力，但仍维持所述元件于所述第一粘着层上的位置在能够控制的范围内；以及
其中将所述元件转移至所述接收基板的步骤将部分所述元件自所述第二粘着层转移至所述接收基板。
14.如权利要求9所述的元件的转移方法，其特征在于，所述元件的数量为多个；以及
其中降低所述第一粘着层对于所述元件的粘着力的步骤包含：
降低所述第一粘着层对于所述元件的粘着力，但仍维持所述元件于所述第一粘着层上的位置在能够控制的范围内；以及
其中将所述元件转移至所述接收基板的步骤将所有所述元件自所述第二粘着层转移至所述接收基板。
15.如权利要求9所述的元件的转移方法，其特征在于，所述接收基板为主动元件阵列基板。
16.如权利要求1所述的元件的转移方法，其特征在于，所述第一承载基板为刚性基板。
17.如权利要求1所述的元件的转移方法，其特征在于，所述第一承载基板的材质为玻璃、硅、聚碳酸酯、丙烯腈-丁二烯-苯乙烯或其任意组合。
18.如权利要求1所述的元件的转移方法，其特征在于，所述第一粘着层的厚度大于或等于1微米。
19.如权利要求1所述的元件的转移方法，其特征在于，所述元件为发光二极体，且其厚度小于或等于100微米。
20.如权利要求1所述的元件的转移方法，其特征在于，所述元件为晶片与设置于所述晶片上的成长基板；以及
所述的元件的转移方法还包含：
在所述第一粘着层的粘着力降低前，自暂时粘附于所述第一粘着层的所述晶片移除所述成长基板。
21.如权利要求1所述的元件的转移方法，其特征在于，所述第一粘着层的材质为环氧树脂、聚甲基丙烯酸甲酯、聚硅氧烷、硅胶或其任意组合。
22.如权利要求1所述的元件的转移方法，其特征在于，所述第一粘着层的粘着力为借由电场、电磁波、热、超音波、机械力或其任意组合降低。
23.如权利要求1所述的元件的转移方法，其特征在于，所述第一粘着层的涂布为借由旋转涂布机、狭缝涂布机或其任意组合达成。
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Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015156891A2 (en) * 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US10446728B2 (en) * 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
KR101614370B1 (ko) * 2015-04-07 2016-04-21 엘지전자 주식회사 반도체 발광소자, 반도체 발광소자의 이송 헤드, 및 반도체 발광소자를 이송하는 방법
TWI557831B (zh) * 2015-05-15 2016-11-11 友達光電股份有限公司 微組件的傳送方法
TWI567011B (zh) * 2016-06-15 2017-01-21 All Ring Tech Co Ltd Method and device for conveying the components of the bonding process
US10032827B2 (en) 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
US9997399B2 (en) * 2016-08-16 2018-06-12 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
US9722134B1 (en) * 2016-08-16 2017-08-01 Mikro Mesa Technology Co., Ltd. Method for transferring semiconductor structure
KR102510934B1 (ko) * 2016-10-04 2023-03-16 뷰리얼 인크. 도너 기판 내의 마이크로 디바이스 배열
CN108242481B (zh) * 2016-12-27 2020-11-17 英属开曼群岛商錼创科技股份有限公司 显示器的制作方法
US10211363B2 (en) 2017-02-21 2019-02-19 Shenzhen China Star Optoelectronics Technology Co., Ltd Transfer printing template and transfer printing device of micro light-emitting diode
CN106903978B (zh) * 2017-02-21 2019-01-11 深圳市华星光电技术有限公司 转印模板及微发光二极管的转印装置
TWI681472B (zh) * 2017-04-10 2020-01-01 英屬開曼群島商錼創科技股份有限公司 傳輸微小元件的方法
US10632727B2 (en) 2017-04-10 2020-04-28 PlayNitride Inc. Method of transferring micro devices
CN108695412B (zh) * 2017-04-10 2021-08-24 英属开曼群岛商錼创科技股份有限公司 传输微小元件的方法
CN106992230B (zh) * 2017-04-28 2019-01-29 京东方科技集团股份有限公司 一种led微粒转印方法
CN107154374B (zh) 2017-05-23 2019-09-10 深圳市华星光电技术有限公司 微转印方法
US10510287B2 (en) * 2017-08-07 2019-12-17 Industrial Technology Research Institute Transfer method of expanding pitches of device and an apparatus for performing the same
CN109427643A (zh) * 2017-09-04 2019-03-05 东捷科技股份有限公司 改变电子元件排列的方法
CN107634029B (zh) * 2017-09-25 2019-12-10 广东工业大学 一种芯片的转移方法
US11257987B2 (en) * 2017-10-16 2022-02-22 PlayNitride Inc. Structure with micro light-emitting device
CN107808911B (zh) * 2017-10-26 2020-04-07 江苏新广联半导体有限公司 一种微型薄膜外延结构层转移方法
JP6990577B2 (ja) * 2017-12-22 2022-01-12 東レエンジニアリング株式会社 実装方法および実装装置
JP6916104B2 (ja) * 2017-12-22 2021-08-11 東レエンジニアリング株式会社 実装方法および実装装置
US10643880B2 (en) * 2018-02-13 2020-05-05 Mikro Mesa Technology Co., Ltd. Method for transferring micro device
CN108400108B (zh) * 2018-03-23 2021-03-09 京东方科技集团股份有限公司 一种微器件转印装置及微器件转印系统
CN110391165B (zh) * 2018-04-18 2021-09-14 英属开曼群岛商镎创科技股份有限公司 转移载板与晶粒载板
WO2019207920A1 (ja) * 2018-04-26 2019-10-31 Jsr株式会社 半導体素子の実装方法および実装装置
TWI683453B (zh) * 2018-06-08 2020-01-21 友達光電股份有限公司 發光裝置的製造方法
CN108807265B (zh) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
CN111129235B (zh) * 2018-10-31 2021-10-22 成都辰显光电有限公司 一种微元件的批量转移方法
CN111834248B (zh) * 2019-04-23 2023-11-07 美科米尚技术有限公司 用于转移微型元件的方法
JP7200884B2 (ja) * 2019-08-27 2023-01-10 信越化学工業株式会社 微小構造体の実装方法
TWI705038B (zh) * 2019-10-31 2020-09-21 隆達電子股份有限公司 取料裝置及其取料方法
CN110931392B (zh) * 2019-11-18 2022-12-27 錼创显示科技股份有限公司 微型组件转移头、微型组件转移装置及微型组件显示设备
TWI749399B (zh) * 2019-11-18 2021-12-11 錼創顯示科技股份有限公司 微型元件轉移頭、微型元件轉移裝置以及微型元件顯示裝置
KR102465730B1 (ko) * 2020-03-06 2022-11-14 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법
CN112967982B (zh) * 2020-09-10 2022-04-19 重庆康佳光电技术研究院有限公司 转移基板及制作方法、芯片转移方法及显示面板
CN112110205B (zh) * 2020-09-21 2022-03-29 梧州学院 一种仿珍珠渡油自动化设备
TWI739611B (zh) * 2020-09-28 2021-09-11 友達光電股份有限公司 顯示裝置
CN112203402B (zh) * 2020-10-27 2022-08-26 中国科学院深圳先进技术研究院 印制电路板及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1913113A (zh) * 2005-08-10 2007-02-14 株式会社瑞萨科技 半导体器件及其制造方法
US20100173474A1 (en) * 2007-02-08 2010-07-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor chip
JP2013153071A (ja) * 2012-01-25 2013-08-08 Nitto Denko Corp 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム
US20130330910A1 (en) * 2010-10-01 2013-12-12 Shumpei Tanaka Dicing die bond film and method of manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10128923A1 (de) * 2001-06-15 2003-01-23 Philips Corp Intellectual Pty Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens
US20070000595A1 (en) * 2005-06-29 2007-01-04 Intel Corporation Adhesive substrate and method for using
US20080122119A1 (en) * 2006-08-31 2008-05-29 Avery Dennison Corporation Method and apparatus for creating rfid devices using masking techniques
US8685837B2 (en) * 2010-02-04 2014-04-01 Sharp Kabushiki Kaisha Transfer method, method for manufacturing semiconductor device, and semiconductor device
US8835940B2 (en) * 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1913113A (zh) * 2005-08-10 2007-02-14 株式会社瑞萨科技 半导体器件及其制造方法
US20100173474A1 (en) * 2007-02-08 2010-07-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor chip
US20130330910A1 (en) * 2010-10-01 2013-12-12 Shumpei Tanaka Dicing die bond film and method of manufacturing semiconductor device
JP2013153071A (ja) * 2012-01-25 2013-08-08 Nitto Denko Corp 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム

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