TWI268115B - The diaphragm chip of a silicon-based microphone and its manufacturing method - Google Patents

Abstract

This invention mainly provides a method to manufacture the diaphragm chip of a back electret silicon-based condenser microphone that detects the changing of the energy of sound. Firstly, after an etched material that can be dissolved by a preset etchant is utilized to define a removable layer on a substrate, a blocking layer and a diaphragm layer are separately, orderly, and upwardly defined. Further, after a conductive material is evaporated to form a seed crystal that is utilized to be a seed crystal diaphragm formed on the diaphragm layer, a polymer material is utilized to define a deformable area that relatively covers some of the diaphragm layer. Furthermore, it forms some exposed sacrificed area on the seed crystal diaphragm relatively to a surrounding area. Moreover, after an electroplating process is upwardly performed at the surrounding area, it forms and thickens the supporting layer of the surrounding sacrificed layer that is utilized to form a surrounding wall. Subsequently, it etches the sacrificed layer, and obtains the diaphragm chip. Finally, it utilizes an etchant to remove the removable layer, and obtains the diaphragm chip without introducing a cutting process. Eventually, it improves the yield rate of the whole chip manufacturing process.

Description

1268115 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of manufacturing a wafer of a wafer wafer. ^Special species [prior art] Since the first use of Shi Xi wafer is completed because the Shi Xi wafer has a small volume, after seeing the wind seven tables, P n, 1 I, using semiconductor and micro-electromechanical technology can be accurate Controlling the size, ^ ^ image, sub-production, 忐 research and manufacturing is increasingly widespread / 4 money points, so (4) microphones for the time-based microphones have a lot of clothes:: also; in many dreams The problem in the wafer processing process needs to be carried out. ^^ The film must be subjected to a bulk etchmg process to form the "dmphragm" and "air chamber" necessary for the Japanese film. I

SdP >»" and other structures; and need to push =:? The longer the process is, the more the process will be: "L: the quality is also more variable, and the process yield is, for example, when the majority passes. Semiconductor process, such as lithography, etching, steaming (splash) plating, etc. After the wafer is wafered, it is sawn into a plurality of wafers due to vibration, friction and other factors. The structure of the "diaphragm" and the factory air chamber of a single wafer causes a reduction in overall process yield. Therefore, how to design the overall design of Shi Xiwei to the wind and its related processes to mention 8

1268115 The quality of finished products, 寇 ,, AAA X, li=> T=f, the shell of the I-pillar, and the application of the micro-microphone, is the goal of the industry and the academic community. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a wafer-cut microchip film wafer obtained by separating a prepared wafer without cutting, a manufacturing method, and a vibration method obtained by the method. Film wafer. Thus, the method for manufacturing a diaphragm wafer of the micro-microphone of the present invention comprises the following steps: / '匕, /a) is defined on a substrate as a material to be dissolved which is soluble in a predetermined etching liquid (1) on the release layer The insulating material defines a vibrating layer that defines a material that is insulated by a block layer and that is deformable in response to the action of acoustic energy. (〇 定义 定义 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该Correspondingly, a portion of a ring wall region surrounding the inductive deformation region surrounding the core layer is exposed. 曰 (4) is thickened by a conductor material from the seed film corresponding to the exposed portion of the ring wall region to form a ring surrounding the sacrificial layer. The two solid layers of the film are collectively defined as a ring wall of the electrode. The tooth layer, the diaphragm layer and the separator layer together form a diaphragm wafer. '曰/, (1) The diaphragm wafer was phase-separated by etching the release layer with an etching solution to obtain the diaphragm wafer. In addition, the vibrating 1268115 film wafer of the micro-microphone of the present invention is prepared by the above manufacturing method, and is packaged in a housing defining a package space, and the housing can convert the capacitance change into a field of voltage change. An effect transistor, and a backplane encapsulated in the package space, together comprise the micro-microphone, the backplane comprising a conductor layer formed of a conductor material, and an electret material formed on the conductor layer and charged An electret layer, and a sound hole image passing through the conductor layer and the electret layer, the conductor layer being spaced apart from the housing to collectively define a gas chamber for airflow, the diaphragm wafer comprising a separator layer, a vibrating layer, and a ring wall. The spacer layer is formed of an insulating material and is coupled to the backing plate. The diaphragm layer is formed of an insulating material and is coupled to the partition layer such that the diaphragm layer and the partition layer together with the backboard define a vibration space communicating with the air chamber through the sound hole image. The ring wall is coupled to the diaphragm layer and serves as an electrode, and has a seed film formed on the diaphragm layer by a conductor material, and a support layer formed by thickening the conductor material from the seed film. The ring wall and the electret layer together form a capacitance corresponding to the diaphragm of the diaphragm layer being bounded by the supporting layer, and the corresponding deformation is changed by the action of the acoustic energy. [Embodiment] The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. In the detailed description of the present invention, it should be noted that in the following description, similar components are denoted by the same reference numerals. 1 Manufacture of the diaphragm wafer 7 of the micro-microphone 4, a preferred embodiment of the method 1268115, can produce a diaphragm wafer 7 as shown in FIG. 2; and cooperate with the micro-microphone 4 as shown in FIG. As described in the manufacturing method, the Shixi micro-microphone 4 shown in FIG. 4 can be packaged. Referring first to Fig. 4, the micro microphone 4 includes a housing 5, a field effect transistor (FET) 1 〇〇, a back plate 6, and a diaphragm wafer 7.

The housing 5 is assembled by a package substrate 51 and a cover 52. The package substrate 51 is composed of two PCB boards, and includes a surface 511, a bottom surface 512 opposite to the surface 511, a circuit layout 513 disposed between the surface 511 and the bottom surface 512, and a recess 514 formed on the surface 511. . The cover 52 includes a top wall 521 for sound wave passage, and a peripheral wall 522 extending downward from the top wall 52i. The top wall 521 and the peripheral wall 522 together define a package space 524 having a package π 523. The package substrate 51 can be The inner wall surface of the peripheral wall 522 is coupled to close the sealing opening 523. The field effect transistor 100 is packaged in the recess 514 of the package substrate 51 and electrically connected to the circuit layout 513 for converting the capacitance change into a voltage change. The backplane 6 includes a conductor layer 6 formed of a conductor material. The electret layer 62 formed on the conductor layer 61, and the sound hole image 63 of the through conductor 61 and the electret layer 62, and the conductor layer 61 is connected to a predetermined region of the surface 511 of the package substrate 'and Concave Shaw 514$ Set the field ^ 电 晶; 1 剩余 之 之 之 之 屮 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁 翁. 2, the diaphragm wafer 7 has a spacer layer 71 - a diaphragm layer 72 formed upward from the spacer layer 71, and a ring wall 73 formed upward from the diaphragm layer 1268115. The ΓΛ layer λ is formed of an insulating material and has a predetermined image and is attached to the diaphragm 7. Here is an example of the two-phase inter-day #. The long block diaphragm layer 7 2 having a U-shaped cross section is formed of a material which is insulated and can be deformed by the action of the 庑 & J , , , , , , , , , , , , , , , , Cross section into a concave and convex wrinkle

The inductive deformation region 721, and the ring wall region m surrounding the inductive deformation region 721, the diaphragm layer 72 μ should be the deformation region 721, which is the diaphragm 721 used by the Shixi microphone 4 to induce acoustic energy and generate corresponding deformation. The sensing deformation region 721 of the diaphragm layer μ and the partitioning layer 71 and the backing plate 6 jointly define a vibration space 42 that communicates with the air chamber 41 through the sound hole image 63, and is deformed when the diaphragm is applied by the acoustic energy. Use. The % wall 73 is formed of a conductor material as an electrode, and forms a voltage valley corresponding to the conductor layer 721 which changes in response to deformation due to the action of acoustic energy. The ring wall 73 includes a seed film 731 formed on the diaphragm layer 72, and a reinforcing layer 732 formed by thickening the corresponding ring wall region 722 from the seed film 731, and the reinforcing layer 732 and the inner wall of the casing 52. The top of the surface is connected for grounding. When the external sound energy penetrates through the top wall 521 of the casing 52 and acts on the diaphragm 721 of the diaphragm wafer 7, the diaphragm 721 is deformed correspondingly, and the spacing between the moon plate 6 and the diaphragm 721 is changed. That is, the capacitance formed by the ring wall 73 as the electrode and the conductor layer 61 is changed correspondingly. The field effect transistor 1 converts this capacitance change into a voltage change, and then transmits it via the circuit layout 513 for subsequent operations. The above described micro-microphone 4 and diaphragm wafer 7 can be more clearly understood after the description of the manufacturing process shown in Figs. 1 and 3 9 8 12 681.

Referring to FIG. 1 , the diaphragm film 7 is fabricated by first performing a well η and defining a partition image downward from the surface of the wafer substrate (for the second layer of the diaphragm layer 7 of the film wafer 7). A slightly elongated block: : a closed block, where the image of the partition block is a two-phase groove with a U-shaped cross section, and is made of aluminum that can be dissolved by hydrochloric acid. The surface of the substrate forming the image of the spacer is deposited upward - an extremely thin release layer L

Next, the step 12 of forming the diaphragm layer 72 and the spacer layer 71 is performed. This step is to first define the partition layer 7 with an insulating material on the area of the release layer 21 corresponding to the image of the partition block, so that the partition layer 71 has a pattern corresponding to the image of the patch (ie, the circle and the section are slightly U-shaped closed block), ^ After defining the wrinkle image with the material of Ming (Α1), then, the material can be deformed by the action of sound energy, and the wrinkle cutter is defined. The block layer, and the diaphragm layer 72 of the detached layer which is not covered by the folded image and the partition block layer, causes the interception of the inductively deformed region 721 of the diaphragm layer 72 to crease the image The folded pattern 'is used as a diaphragm 72 that is used to induce deformation in response to acoustic energy. Then, in step 13, after the seed film 731 as a subsequent crystal seed crystal is vapor-deposited on the diaphragm layer 72 with a conductor material such as a complex/gold Cr/Au, the germanium material, such as a photoresist, is formed on the seed film. A sensing deformation region 721 corresponding to the (four) layer 72 is correspondingly defined on 731, and a sacrificial layer 22 in which the seed film 731 corresponds to a portion of the locus region 722 is formed. Then, proceeding to step 14, the conductor material is selected, for example, the self-cultivating film (3) corresponding to the exposed portion of the annular wall region 722 is thickened into a ring.

10 1268115 The support layer-to-mouth layer 732' of the sacrificial layer 22 is formed into a ring wall 73 for the electrode by the seed film 731 and the anchor layer 732. Then, step 15 is performed to correspond to the photoresist removal agent of step 13 (pR removes the sacrificial layer 22, at this time, the ring wall 73, the (four) layer ^" block layer 71 collectively constitutes a vibration connected to the substrate. Wafer 7. It should be particularly noted that, since the ring wall 73 is mainly composed of a conductor material 枓', particularly a metal material, and the diaphragm layer 72 and the sacrificial layer 22 are respectively defined by materials of different properties, therefore, In this step, the sacrificial layer 22 can be removed in the condition that the insoluble name affects the structure of the diaphragm layer 72 and the ring wall 73, so that the "last name" process can be accurately controlled. Finally, step 16 is performed to hydrochloric acid. Dissolved (4) is the material formed by the detachment _21 'At the same time, the hydrochloric acid will also be dissolved and removed to remove the wrinkle pattern formed by the material': the diaphragm wafer 7 can be separated from the substrate without cutting. The diaphragm film 7 can be obtained, and the substrate can be recycled again. In this case, the separation layer 21 is cut to select the material corresponding to the buffered X Shi Xi (4) liquid (deletion) dissolved (tetra) dioxo (4), originally The wrinkle image formed by 1 material also needs to be changed to dioxide For the formation of the material, the fields ', ', and / / 16 need to be changed to be buffered cerium oxide etching solution (BQE), and after the sacrificial layer 22 and the release layer 21 are sewn into the image, the cutting is not required. The diaphragm wafer 7 is directly produced. The method of Bu Zhen M 日日^ is not limited to the above-mentioned method, but the lithography technique is applied on the substrate to define the corresponding spacer layer π and vibration as shown in FIG. After the inductive deformation region of the film layer 722 (the unevenness 1268115 image 8 of the diaphragm 21), the release layer 21, the spacer layer 71, the diaphragm layer 72 and the ring are sequentially defined on the substrate on which the uneven image 8 is formed. After the wall 73, the film 22 and the release layer 21 are further dissolved, and the diaphragm wafer 7 is obtained. Of course, if the diaphragm 721 of the diaphragm 7 prepared in advance is a flat diaphragm, it may be omitted. The process of defining a wrinkle image or defining a concave-convex image 8 on a substrate, and preparing a diaphragm of the diaphragm 721 in a flat cup can be used for the flat diaphragm of the 曰 曰 / 21 membrane

The wafer 7 provides another mode of the diaphragm wafer 7 for consumption selection. Since these related changes are only different from the structural form of the wafer 7, the manufacturing process is k-shaped, but it is similar, so it is no longer More details. When the main structure of the Shihua micro-microphone 4, the diaphragm wafer 7, is prepared, the manufacture of the micro-microphone 4 as shown in Fig. 3 can be performed. <First, step 31 is performed, and a shim 5 having a package substrate 51 and a cover 52, a back plate 6, and a diaphragm 7 as shown in Fig. 2 are prepared as shown in Fig. 4. In J, the moon plate 6 连结 first joins a film made of an electret material to a sheet made of a conductor material, and has an electret layer 62 and a conductor layer Μ: a backing substrate, for example, a microelectromechanical device. The technique forms a punch-through image on the backing substrate: the sound hole image 63 of the board substrate, and writes the electric charge on the electret layer 62 to be made: and because the back 6 has a large number of methods, most of them have different patents. 4, here is no more to illustrate the way the backplane is made. Next, in step 32, the field effect transistor 100 is correspondingly packaged in the recess 514 of the package substrate 51 and electrically connected to the circuit layout 513. Then, in step 33, the diaphragm wafer 7 is connected to the inner wall surface of the top wall 521 of the casing 5 by the ring wall 73, and is sealed into the package space. Then, the step 34 is performed, and the back plate 6 is oriented toward the diaphragm with the electret layer 62. The wafer 12 8 1268115 is sealed into the package space 524, and the back plate 6 is coupled to the spacer layer 71 of the vibrating wafer 7, while the diaphragm layer 72, the spacer layer 71 and the back of the diaphragm wafer 7 are backed. The plates together define a vibration space 42. The final step 35 is to connect the package substrate 51 to the back plate 6 with the recess 514 of the field effect transistor 100, and connect the surface of the package substrate 51 to the back plate 6 to connect with the peripheral wall 52 2 . The sealing port 5 2 3 is closed, and the recess 514 accommodates the remaining space of the field effect transistor 1 (8) to form a gas chamber 41 communicating with the vibration space 42 through the sound hole 63 of the back plate 6, thereby completing the Shixi micro microphone* According to the above description, the present invention mainly utilizes the mature yellow light lithography, and cooperates with vapor deposition and electroplating to simply define the structure of the diaphragm wafer 7 in an integrated manner, and at the same time, the material corresponding to the sacrifice of $22, with precision. The protective button engraves the sacrificial layer 33 while not damaging the process of other structures to prepare the diaphragm wafer 7 formed on the substrate, and then applying the disengagement button release layer 21 to separate the diaphragm wafer 7 and Repeated recycling of the substrate can not only avoid the disadvantage that the body etching process is difficult to accurately control, but also avoid the disadvantage of structural damage of the diaphragm 7 due to the cutting, and indeed improve the quality and process yield of the diaphragm 7 . The diaphragm film 7 of the present invention is matched with the back plate 6 having the electret layer 62, and the housing 5 in which the field effect transistor! (9) is embedded is matched with the package of the diaphragm 7 and the back plate 6. Into the housing 5 to make the micro-microphone 4, the microphone is necessary for the airflow, the "gas to 41" for the airflow, the "vibration space 42" required for the deformation of the diaphragm 721, and the conversion of the sound energy. Structures such as "back electret capacitors" that change capacitance can not only be 8 1268115

At the same time, the consumption selection of the micro-microphone is directly defined by a single chip or a dual-chip, and then packaged to achieve the purpose of the present invention, but only the above. The preferred embodiment is not limited to the scope of the present invention, that is, the simple equivalent changes and (4) of the patent scope and the description of the invention according to the invention are still covered by the patent of the present invention. Within the scope. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a preferred embodiment of a method for fabricating a diaphragm wafer of a micro-microphone according to the present invention; FIG. 2 is a schematic structural view illustrating the micro-microphone of the present invention. The diaphragm wafer produced by the method for manufacturing the diaphragm wafer; FIG. 3 is a flow chart showing the diaphragm wafer prepared by the method for manufacturing the diaphragm wafer of the micro-microphone of the present invention, and the package is prepared into a micro FIG. 4 is a schematic structural view showing the manufactured micro-microphone of FIG. 3; and FIG. 5 is a schematic structural view showing that the substrate is first defined as a concave-convex image to prepare an enemy-shaped diaphragm. 8 1268115

[Description of main component symbols] 100 * ^ Field effect transistor 513 * 11 4 s, step 514 * 12...* Step 52... 13...♦ Step 521 * 14..., Step 522 · 15..., Step 523 * 16* Step 524 ^ 21 ^ ^ ^ Disengagement layer 6...22..., sacrificial layer 61... 31... Step 62, · 32...' Step 63... 33..., Step 7... 34* • Step 71... 35..., > Step 72... * * f 矽Microphone 721 * 41... Air chamber diaphragm) 42* - Vibration space 722 * 5... ^ Housing 73·. 51... • Package base 731 * 511 * , surface 732 « 512 * • Bottom 8... Circuit layout concave Slot cover shell top wall peripheral wall package port package space backplane conductor layer electret layer sound hole image diaphragm wafer spacer block diaphragm layer induced deformation region (ring wall region ring wall (electrode) seed plate support layer bump map Like 15 3

Claims (1)

1268115 X. Patent application scope: 1·- A method for manufacturing a diaphragm wafer of a micro-microphone, comprising: 乂可* (4) dissolved metal* defines a release layer on the substrate; (1) on the release layer A spacer layer is defined by an insulating material, and a diaphragm layer is defined by a material which is insulated and can be deformed corresponding to the action of acoustic energy; a crystal film is defined by a conductor material on the diaphragm layer, and a high-knife material is used. a sacrificial layer correspondingly covering a portion of the inductively deformed region of the diaphragm layer, and corresponding to the portion of the ring-shaped annular wall region surrounding the inductively deformed region of the diaphragm layer bare; The conductive material is thickened upward from the exposed area of the film corresponding to the ring wall region to form a supporting layer surrounding the sacrificial layer, and the seed film and the supporting layer are jointly defined as a ring wall of the electrode; In addition to the sacrificial layer, the ring wall, the diaphragm layer and the spacer layer together form a diaphragm wafer; and " (f) dissolving the release layer with money engraving to cause the diaphragm wafer to be associated with the plate The diaphragm wafer was obtained by separation. The method for manufacturing a diaphragm wafer of a micro-microphone according to the invention of claim 2, wherein the step (a) has the following step: 'al' defines a separation on the surface of the substrate a block image; and (a2) defining the release layer on the surface of the substrate. 3. The manufacturing method of 16 1268115 for a diaphragm s of a micro-microphone according to the second aspect of the patent application, wherein the step (a) further comprises a sub-step (a3) before the sub-step (a2), A wrinkle image is defined on the surface of the substrate corresponding to the area surrounded by the image of the spacer. " 4. The method according to claim 2, wherein the step (a) further comprises a sub-step (a4) after the sub-step (a2) to be A material that dissolves in the same manner as the etching solution of the material of the release layer, and a wrinkle image is defined on the release layer corresponding to the area surrounded by the image of the spacer. 5. The method for manufacturing a diaphragm wafer for cutting a micro-microphone according to the scope of the invention, wherein the release layer is formed by using aluminum as a material, and the dissolution liquid is a fluid corresponding to the aluminum material. . 6. The method for manufacturing a diaphragm wafer of 9 micro-microphones according to the first or second aspect of the patent application, wherein the release layer is formed by dioxotomy, and the etching solution is a cerium oxide etching solution. . 7. The method for fabricating a diaphragm wafer of 7 micro-microphones according to the scope of the invention, wherein the step (b) has the following steps: (bl) corresponding to the partition block on the release layer An area of the image defines the spacer layer; and (10) defines the diaphragm layer from the release layer upward, and the diaphragm corresponds to a region surrounded by the image of the spacer block corresponding to the wrinkle E image to form a predetermined wrinkle Folded. 8. According to the scope of application for patents 筮彳 f stacking method:: The film of the film of the wind of the wind. · The step (c) is after the spin coating of the photoresist... The light sacrificial layer defines the sacrificial layer. ^ 17 1268115 9· The method for manufacturing a micro-mike according to the scope of the patent application scope, wherein the step (1) is based on vapor deposition: the film of the film (7) is in accordance with the scope of the patent application. The layer of the micro-microphone P ^ ''i. -tf I @ wafer. In the step (4), the sacrificial layer of the micro-microphone P ^ ^ rU wafer according to the eighth item of the patent scope is formed by the electric money method: ... the step (e) is light and The removing agent removes the 12:::: method of the diaphragm of the microphone of the sixth paragraph of the patent range: in the step (1), after separating the diaphragm wafer and the substrate, the wrinkle is removed by synchronous etching Fold the image. 13. One (four) micro-microphone diaphragm chip 'The Shi Xi micro-microphone has a housing that defines a farm space, - can convert the capacitance change into a voltage change = ^ transistor ' and - packaged in the package space a backing plate, the backing plate having: a conductor layer formed of a conductor material, an electret material formed on the conductor layer and having a thunder; ^ + & n μ a of the electret layer, and a through hole The conductor layer is a sound hole image of the electret layer, and the conductor layer is spaced apart from the housing to define a gas chamber for the flow of the airflow. The diaphragm wafer comprises: a partition block formed by the material of the edge material ", connected to the backing plate; ^, the diaphragm layer formed by the edge material, and the layer of the partition block. The sinusoidal diaphragm layer and the partitioning block layer together with the backing plate define a vibration space communicating with the air chamber through the sound hole image; and 1268115 a ring connected to the diaphragm layer and serving as an electrode, soil , having a seed film formed on the diaphragm layer by a conductor material, and a support layer formed by thickening the conductor material from the seed film, the ring wall and the electret-hill forming a pair The diaphragm layer should be bounded by the supporting layer to form a diaphragm, which is a diaphragm that changes in response to deformation due to the action of sound energy. The diaphragm chip, the film wafer system 14 · According to the scope of claim 13 of the 矽 micro-microphone is the vibration of the micro-microphone described in the first application patent Made by the manufacturing method. The vibrating piece of the micro-microphone according to the thirteenth aspect of the patent application, wherein the vibrating layer is surrounded by the reinforcing layer to form a predetermined rugged fold. 16. The diaphragm of the micro-microphone according to item 13 of the patent application scope, wherein 'the supporting layer is thickened by the crystal film as the seed crystal. 17. According to the thirteenth item of the patent application scope The diaphragm of the micro-microphone, wherein the ring wall is coupled to the housing to be grounded. The method for manufacturing a micro-microphone includes: (a) preparing a housing having a package substrate and a cover, the package substrate comprising a surface, a bottom surface opposite to the surface, and a a circuit layout between the surface and the bottom surface and a recess formed in the surface, the cover including a top wall for sound wave penetration, and a peripheral wall extending downward from the top wall, the top wall and the peripheral wall Forming a package space having a package port, the package substrate can be coupled to the peripheral wall to close the package port; (1) preparing a back plate having a conductive layer formed of a conductive material, a body layer of 19 8 1268115 An electret layer formed of an electret material on the conductor layer and writing a charge, and a sound hole image penetrating the conductor layer and the layer of the electret; ^ (C) as described in claim 1 a method for manufacturing a diaphragm wafer of a micro-microphone; (d) connecting a field-effect transistor in a groove of the package substrate and electrically connecting with the circuit layout; Diaphragm wafer The top wall of the housing inner wall surface of the seal into the package space; should be fixed to the diaphragm support ring boundary layer due to the effect of acoustic energy And generating a change in the capacitance of the capacitor; and (f) encapsulating the back plate into the package space with the electret layer facing the diaphragm wafer, and separating the back plate from the diaphragm wafer Layer-phase connection 'to make the diaphragm layer of the diaphragm wafer, the partition block I and the back plate together define a vibration space for the diaphragm layer pair Wherein the step (b) has the method of manufacturing the microphone according to the item 18, and has the following steps: 20 1268115 (bl) connecting a film made of an electret material to a conductor material Forming a backing substrate having the electret layer and the conductor layer on the sheet; (b2) forming a sound hole image penetrating the backing substrate on the backing substrate by MEMS technology; : (b3) Writing a charge to the electret layer to produce the backing plate. A 矽 microphone includes: a housing having a package substrate and a cover, the package substrate including a surface, a bottom surface opposite to the surface, and a surface disposed on the surface and the bottom surface a circuit arrangement ′ and a recess formed in the surface, the casing including a top wall for acoustic wave passage, and a peripheral wall extending downward from the top wall, the top wall and the peripheral wall being defined together - having _ encapsulation space of the package, the package substrate can be connected with the peripheral wall to close the package π; a field effect transistor that can convert the electric valley change into a voltage change,: a groove towel mounted on the package substrate, and Electrically connected to the (four) way layout; - the backing plate 'includes - a conductor layer formed of a conductor material, one of the electret layers formed on the conductor layer, and the through-hole layer; and the body layer and the electret layer In the sound hole diagram I, the conductor layer is connected to the seal (4) 1 mesh, and the remaining space after the field effect transistor is accommodated in the recess; a gas chamber for supplying a gas flow; and a diaphragm wafer having a separator layer formed of an insulating material a diaphragm layer H formed from the partition layer by an insulating material, a conductor wall formed further upward from the diaphragm layer, the ring wall comprising a seed film connected by a _ 21 1268115 μ » hai diaphragm layer, and a building solid layer formed by plating thickening of the crystal film, the partitioning layer is coupled to the backing plate, so that the diaphragm layer and the partitioning layer are jointly defined with the backing plate - by the sound hole image a vibration space in which the gas chamber communicates with the diaphragm layer, wherein the diaphragm layer is correspondingly deformed by the acoustic energy of the diaphragm layer bounded by the support layer of the ring wall: the ring wall serves as an electrode The electret layers together form a capacitance that changes in response to the corresponding deformation of the diaphragm due to the action of the acoustic energy. 2. According to the second aspect of the patent application, the micro-microphone is manufactured by the manufacturing method of the micro-microphone. The vibrating wafer of oxygen is insulted according to the second aspect of the patent application, the wall of which is connected to the housing to be grounded.