CN109950367B - 元件转移方法 - Google Patents
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Abstract
本发明是关于一种元件转移方法,其包括:在载体基板上形成柔韧黏合层;将元件放置于柔韧黏合层上方;以转移头组件接触元件,其中转移头组件的柔韧介电层在接触期间和元件接触且比元件还柔软,因此转移头组件的柔韧介电层在接触期间变形,且柔韧黏合层比元件还柔软,因此柔韧黏合层在接触期间变形;驱使转移头组件产生抓取力;利用转移头组件所产生的抓取力拾取元件;以及将元件放置于接收基板上。因此,这可使得转移头组件容易拾取元件,并增加拾取的成功率。
Description
技术领域
本发明涉及一种用于转移至少一个元件的方法。
背景技术
集成和封装问题是微元件商业化的主要障碍之一。微元件例如是射频(RF)微机电系统(MEMS)微开关、发光二极管(LED)显示系统,以及MEMS或基于石英的振荡器。
用于转移元件的传统技术包括通过晶圆接合而由转移晶圆转移至接收晶圆。其中一种实行方式是“直接接合”,其涉及一批元件从转移晶圆到接收芯片的一个接合步骤。另一种实行方式是“间接接合”,其涉及两个接合/剥离步骤。在间接接合中,转移晶圆可由施体晶圆拾取一个数组元件,并接着将此数组元件接合至接收晶圆,后续再移除转移晶圆。
发明内容
本发明的目的在于,克服现有的通过直接接合或间接接合两种实行方式完成元件转移的成功率较低的缺陷,而提出一种元件转移方法,所要解决的技术问题是更容易转移元件,并增加成功率,从而更加适于实用。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。
依据本发明提出的的一种元件转移方法,包括:在载体基板上形成柔韧黏合层;将元件放置于柔韧黏合层上方;以转移头组件接触元件,其中转移头组件的柔韧介电层在接触期间和元件接触且比元件还柔软,因此转移头组件的柔韧介电层在接触期间变形,且柔韧黏合层比元件还柔软,因此柔韧黏合层在接触期间变形;驱使转移头组件产生抓取力;利用转移头组件所产生的抓取力拾取元件;以及将元件放置于接收基板上。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
前述的元件转移方法,当所述转移头组件接触所述元件时,所述柔韧介电层的至少一个部位在所述转移头组件的电极和所述元件之间。
前述的元件转移方法,所述转移头组件通过库伦力、约翰森-拉别克效应或其组合拾取所述元件。
前述的元件转移方法,所述柔韧介电层在下一次拾取之前回复其原始形状。
前述的元件转移方法,所述转移头组件包括:基板;转移头,位于所述基板上,其中所述转移头包括电极,所述电极位于所述基板上;以及所述柔韧介电层,覆盖所述电极。
前述的元件转移方法,所述基板允许可见光、红外光、紫外光或其组合至少部分通过。
前述的元件转移方法,所述基板具有至少一个凹洞于其内,且所述柔韧介电层还共形地覆盖所述凹洞的侧壁和底部。
前述的元件转移方法,所述至少一个凹洞的数量为多个,且当由用于抓取所述至少一个元件的所述转移头组件的一侧观看时,所述凹洞中的至少两个彼此分隔开。
前述的元件转移方法,所述基板具有至少一个凹洞于其内,且所述凹洞的侧壁和底部不受所述柔韧介电层覆盖。
前述的元件转移方法,所述转移头的所述电极为电单极。
前述的元件转移方法,所述转移头的一对所述电极为电双极。
前述的元件转移方法,所述柔韧介电层包括高分子材料。
前述的元件转移方法,所述柔韧介电层包括多个颗粒。
前述的元件转移方法,所述颗粒的介电常数大于所述柔韧介电层的介电常数。
前述的元件转移方法,所述颗粒包括高介电常数材料。
前述的元件转移方法,当所述转移头组件接触所述元件时,所述颗粒的至少一个部位在所述转移头组件的电极和所述元件之间。
前述的元件转移方法,还包括:经由所述载体基板对所述柔韧黏合层照射至少一种电磁波,以减少所述柔韧黏合层对所述元件的黏合压力。
前述的元件转移方法,放置于所述柔韧黏合层上方的所述元件为其上具有被图案化的光阻层的切片元件。
前述的元件转移方法,将所述元件放置于所述柔韧黏合层上方的步骤包括:将未切片元件放置于所述柔韧黏合层上方;将光阻层涂布于所述未切片元件上方;对所述光阻层进行图案化;以及经由被图案化的所述光阻层对所述未切片元件进行蚀刻,致使所述未切片元件被切片成所述切片元件。
本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案,本发明元件转移方法可达到相当的技术进步性及实用性,并具有产业上的广泛利用价值。根据本发明的元件转移方法,由于柔韧介电层和柔韧黏合层在转移头组件接触元件时变形,因此元件与转移头组件齐平。如此,元件与转移头组件之间的间隙可被消除,使得元件可完全接触转移头组件以维持转移头组件的抓取力。因此,这使得转移头组件可容易拾取元件,并增加拾取的成功率。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。
附图说明
图1A至图1E为本发明元件转移方法的一种实施例的剖面图,其演示元件转移方法中的步骤。
图2A为本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件的剖面图。
图2B为本发明元件转移方法中图2A的转移头组件的立体图,其中柔韧介电层省略而未绘示。
图3为本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件的剖面图。
图4为本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件的剖面图。
图5为本发明元件转移方法的另一种实施例绘示图1C中的A部位的放大图。
图6A至图6D为本发明元件转移方法的另一种实施例所绘示的剖面图,其演示元件转移方法中的一些步骤。
【符号说明】
100:载体基板 102:柔韧黏合层
104:元件 104A:未切片元件
104B:切片元件 106:接收基板
110:转移头组件 112:基板
114:转移头 114S:侧
116:电极 118:柔韧介电层
120:光阻层 122:被图案化的光阻层
P:颗粒 R:凹洞
RS:凹洞侧壁 RB:凹洞底部
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的元件转移方法其具体实施方式、结构、方法、步骤、特征及其功效,详细说明如后。
有关本发明的前述及其他技术内容、特点及功效,在以下配合参考图式的较佳实施例的详细说明中将可清楚呈现。通过具体实施方式的说明,当可对本发明为达成预定目的所采取的技术手段及功效得一更加深入且具体的了解,然而所附图式仅是提供参考与说明之用,并非用来对本发明加以限制。为了方便说明,在以下的实施例中,相同的元件以相同的编号表示。
请参阅图1A至图1E,本发明元件转移方法的一种实施例所绘示的剖面图,其演示元件转移方法中的步骤。如图1A所示,柔韧黏合层102形成于载体基板100上。
在本实施例中,载体基板100为刚性基板。具体来说,载体基板100由玻璃、硅、聚碳酸酯(polycarbonate,PC)、ABS树脂(acrylonitrile butadiene styrene,ABS)或其任意组合所制成,但本发明的实施方式并不以此为限。
在本实施例中,柔韧黏合层102由可黏合有机材料所制成。具体来说,柔韧黏合层102由环氧树脂、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)、聚硅氧烷(polysiloxanes)、硅胶或其任意组合,但本发明的实施方式并不以此为限。
柔韧黏合层102具有在约1微米至100微米的范围中的厚度。柔韧黏合层102借由自旋涂布机、狭缝涂布机或其任意组合所涂布,但本发明的实施方式并不以此为限。
如图1B所示,多个元件104放置于柔韧黏合层102上方,但本发明的实施方式并不以此为限。在一些实施例中,可只有一个元件104被转移。
在本实施例中,元件104为发光二级管(LED)。在一些实施例中,元件104为薄型发光二级管。每个元件104的厚度在约0.5微米至约100微米的范围中。每个元件104的尺寸可在约0.5微米至约500微米的范围中。在一些实施例中,元件104可为接片元件。
在一些实施例中,元件104可形成于成长基板(图未示)上。接着,元件104与成长基板被放置于柔韧黏合层102上,使得柔韧黏合层102暂时黏合元件104于此。接下来,成长基板由暂时黏合至柔韧黏合层102的元件104移除。在一些实施例中,前述移除可利用激光剥离、化学剥离或其任意组合执行,但本发明的实施方式并不以此为限。前述移除可利用其他方法执行。
接着,减少柔韧黏合层102对每个元件104的黏合压力,同时将元件104分别维持在柔韧黏合层102上的多个可预测位置。在本实施例中,电磁波经由载体基板100照射柔韧黏合层102,以减少柔韧黏合层102对元件104的黏合压力,但本发明的实施方式并不以此为限。在一些实施例中,前述减少可利用电场、热、超声波、机械力、压力或其任意组合执行。
在本实施例中,柔韧黏合层102被减少的黏合压力大于每个元件104的重量的十倍,因此元件104分别维持在柔韧黏合层102上的多个可预测位置。
在本实施例中,柔韧黏合层102对每个元件104的黏合压力在约0.01Nt/25mm至约100Nt/25mm的范围内。在一些实施例中,柔韧黏合层102对每个元件104的黏合压力为20Nt/25mm,而柔韧黏合层102对每个元件104的被减少的黏合压力为0.5Nt/25mm。
在柔韧黏合层102的黏合压力被减少之前以及之后,柔韧黏合层102具有小于或等于30Gpa的杨氏系数,但本发明的实施方式并不以此为限。
在本实施例中,元件104为切片元件,但本发明的实施方式并不以此为限。在一些实施例中,元件104可为未切片元件,且元件104在被放置于柔韧黏合层102上之后以及在柔韧黏合层102的黏合压力被减少之前被切片。
在一些实施例中,元件104可被线性地切片,使得元件104的的形状为立方体或长方体。前述切片可利用激光或其他方法执行。在一些实施例中,元件104可被非线性地切片,使得元件104的形状为五角形柱、六角形柱、八角形柱、多边形柱或圆柱。
在一些实施例中,前述切片可利用电感耦合等离子体(ICP)、湿蚀刻或其他方法执行。当元件104的形状不是长方体时,可避免由元件104泄漏电流。因此,可提升元件104的光效率。
在柔韧黏合层102的黏合压力被减少之前,至少一制程(例如,激光剥离制程或切片制程)执行于暂时黏合至柔韧黏合层102的元件104上。由于柔韧黏合层102对每个元件104的黏合压力,每个元件104的位置在制程其间被维持在柔韧黏合层102上的可预期位置,或者元件104的相对位置在制程其间被维持在柔韧黏合层102上的可预期位置。此外,柔韧黏合层102可作为缓冲层来吸收外力(例如,机械力)。
如图1C所示,元件104接触转移头组件110,其中转移头组件110的柔韧介电层118在接触期间和元件104接触。转移头组件110的柔韧介电层118比元件104还柔软,因此转移头组件110的柔韧介电层118在接触期间变形。再者,柔韧黏合层102比元件104还柔软,因此柔韧黏合层102在接触期间变形。
在本实施例中,柔韧介电层118可包括高分子材料,例如PMMA、聚硅氧烷、硅胶或其组合。在一些实施例中,柔韧介电层118可由复合高分子所制成。柔韧介电层118的厚度可在约0.05微米至约1豪米的范围内,但本发明的实施方式并不以此为限。
在本实施例中,柔韧介电层118具有小于或等于30GPa的杨氏系数,但本发明的实施方式并不以此为限。
在本实施例中,转移头组件110包括基板112、转移头114以及柔韧介电层118,但本发明的实施方式并不以此为限。在一些实施例中,转移头组件110可仅包括一个转移头114。转移头114位于基板112上。每个转移头114包括电极116。电极116图案化于基板112上。换句话说,每个转移头114的电极116为电单极,但本发明的实施方式并不以此为限。在一些实施例中,每个转移头114可包括多个电极116(细节将描述在后续实施例中)。在本实施方式中,转移头组件110通过库伦力、约翰森-拉别克效应(Johnsen-Rahbek effect)或其组合拾取元件104。换句话说,在本实施例中,转移头组件110的抓取力为静电力。
在本实施例中,如图1C所示,当转移头组件110接触元件104时,柔韧介电层118的至少一个部位在转移头组件110的电极116和元件104之间。
在本实施例中,基板112允许可见光、红外光、紫外光或其组合至少部分通过。如此,转移头组件110可被定位于元件104上方。
在本实施例中,基板112由石英、硅、玻璃、塑料、金属、陶瓷或其组合所制成,但本发明的实施方式并不以此为限。基板112可由其他材料所制成。
由于柔韧介电层118与柔韧黏合层102在转移头组件110接触元件104时变形,因此元件104与转移头组件110齐平。如此,元件104与转移头组件110之间的间隙可被消除,使得元件104可完全接触转移头组件110以维持转移头组件110的抓取力。因此,这使得转移头组件110可容易拾取元件104,并增加拾取的成功率。
此外,转移头组件110在接触期间对元件104的冲击力也可被柔韧介电层118与柔韧黏合层102吸收,因此元件104不会被转移头组件110破坏。因此,制程良率可增加。
再者,由于柔韧黏合层102的黏合压力,暂时黏合至柔韧黏合层102的每个元件104的位置在制程期间可被维持在可预测位置,因此转移头组件110的转移头114容易被定位于元件104上方。
请继续参照图1C。在元件104接触转移头组件110之后,转移头组件110被驱使以便在元件104上产生抓取力。在一些实施例中,元件104在转移头组件110被驱使而产生抓取力之后接触转移头组件110。
如图1D所示,元件104被转移头组件110拾取。在本实施例中,元件104被转移至接收基板106,但本发明的实施方式并不以此为限。在一些实施例中,元件104可为破坏的元件,且元件104在拾取后被丢弃。
在本实施例中,所有的元件104被拾取,但本发明的实施方式并不以此为限。在一些实施例中,只有一部分的元件104被拾取。
如图1E所示,元件104被放置于接收基板106上。在本实施例中,元件104被分别放置于接收基板106上的特定位置。再者,在本实施例中,柔韧介电层118在下一次拾取之前回复其原始形状。如此,转移头组件110可重复使用。
在本实施例中,接收基板106可为主动式矩阵显示基板或被动式矩阵显示基板。因此,接收基板106与元件104形成显示面板,但本发明的实施方式并不以此为限。在一些实施例中,接收基板106与元件104形成照明装置。
请参阅图2A,本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件110的剖面图。图2B为绘示图2A中的转移头组件110的立体图,其中柔韧介电层118省略而未绘示。如图2A所示,本实施例相似于图1A至图1E的实施例。此两种实施例的差别,在于本实施例的基板112具有凹洞R于其内,且柔韧介电层118还共形地覆盖凹洞R的侧壁RS和底部RB。
如图2A与图2B所示,在本实施例中,当由用于抓取元件104(未示在图2A与图2B中)的转移头组件110的一侧114S观看时,凹洞R彼此分隔开。
请参阅图3,本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件110的剖面图。如图3所示,本实施例相似于图2A的实施例。此两种实施例的差别,在于本实施例的凹洞R的侧壁RS和底部RB不受柔韧介电层118覆盖。
请参阅图4,本发明元件转移方法的另一种实施例绘示图1A至图1E中的转移头组件110的剖面图。如图4所示,本实施例相似于图1A至图1E的实施例。此两实施例的差别,在于本实施例中的每个转移头114的电极116的数量为二。换句话说,每个转移头114的电极116为电双极。
请参阅图5,本发明元件转移方法的另一种实施例绘示图1C中的A部位的放大图。本实施例相似于图1C的实施例,而差别阐述于下。
如图5所示,在本实施例中,柔韧介电层118包括多个颗粒P。亦即,柔韧介电层118为复合介电层。在一些实施例中,颗粒P散布于柔韧介电层118中。当转移头组件110接触元件104时,颗粒P的至少一个部位在转移头组件110的电极116和元件104之间。
在本实施例中,颗粒P的介电常数大于柔韧介电层118的介电常数。在本实施例中,颗粒P包括高介电常数材料,例如二氧化钛(TiO2)、二氧化锆(ZrO2)、钛酸钡(BaTiO3)、五氧化二钽(Ta2O5)、二氧化铪(HfO2)、氧化铝(Al2O3)、氧化镧(La2O3)、三氧化二镨(Pr2O3)或其组合。在本实施例中,柔韧介电层118比颗粒P还柔软。
在本实施例中,每个颗粒P的尺寸小于或等于元件104的尺寸的十分之一。如此,柔韧介电层118可具有均匀的厚度。
请参阅图6A至图6D,本发明元件转移方法的另一种实施例所绘示的剖面图,其演示元件转移方法中的一些步骤。本实施例相似于图1A至图1E的实施例,而差别阐述于下。
在本实施例中,如图6D所示,形成于柔韧黏合层102上方的每个元件104为其上具有被图案化的光阻层122的切片元件104B。本实施例中将元件104形成于柔韧黏合层102上方的步骤将描述于图6A至图6D中。
如图6A所示,未切片元件104A被放置于柔韧黏合层102上方。相似于前述的实施例,未切片元件104A可形成于成长基板(图未示)上。接着,未切片元件104A与成长基板被放置于柔韧黏合层102上,使得柔韧黏合层102暂时黏合未切片元件104A于此。接下来,成长基板由暂时黏合至柔韧黏合层102的未切片元件104A移除。在一些实施例中,前述移除可利用激光剥离、化学剥离或其任意组合执行,但本发明的实施方式并不以此为限。前述移除可利用其他方法执行。
如图6B所示,光阻层120涂布于未切片元件104A上方。在本实施例中,光阻层120包括高分子材料,但本发明的实施方式并不以此为限。在一些实施例中,光阻层120可包括其他材料。
如图6C所示,光阻层120被图案化。结果,多个被图案化的光阻层122形成于未切片元件104A上方。
如图6D所示,未切片元件104A经过被图案化的光阻层122被蚀刻,致使未切片元件104A被切片成切片元件104B。在本实施例中,前述蚀刻可利用ICP、湿蚀刻或其他方法执行。因此,多个元件104形成于柔韧黏合层102上方,其中形成于柔韧黏合层102上方的每个元件104为其上具有被图案化的光阻层122的切片元件104B。
由以上对于本发明的具体实施例的详述,可以明显地看出,根据本发明的元件转移方法,由于柔韧介电层和柔韧黏合层在转移头组件接触元件时变形,因此元件与转移头组件齐平。如此,元件与转移头组件之间的间隙可被消除,使得元件可完全接触转移头组件以维持转移头组件的抓取力。因此,这使得转移头组件可容易拾取元件,并增加拾取的成功率。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (18)
1.一种元件转移方法,其特征在于,包括:
在载体基板上形成柔韧黏合层;
将元件放置于所述柔韧黏合层上方;
以转移头组件接触所述元件,其中所述转移头组件的柔韧介电层在所述接触期间和所述元件接触,所述柔韧介电层包括多个颗粒,所述颗粒的介电常数大于所述柔韧介电层的介电常数,且所述柔韧介电层和所述柔韧黏合层比所述元件还柔软;
驱使所述转移头组件产生抓取力;
利用所述转移头组件所产生的所述抓取力拾取所述元件;以及
将所述元件放置于接收基板上。
2.如权利要求1所述的元件转移方法,其特征在于,当所述转移头组件接触所述元件时,所述柔韧介电层的至少一个部位在所述转移头组件的电极和所述元件之间。
3.如权利要求2所述的元件转移方法,其特征在于,所述转移头组件通过库伦力、约翰森-拉别克效应或其组合拾取所述元件。
4.如权利要求1所述的元件转移方法,其特征在于,所述柔韧介电层在下一次拾取之前回复其原始形状。
5.如权利要求1所述的元件转移方法,其特征在于,所述转移头组件包括:
基板;
转移头,位于所述基板上,其中所述转移头包括电极,所述电极位于所述基板上;以及
所述柔韧介电层,覆盖所述电极。
6.如权利要求5所述的元件转移方法,其特征在于,所述基板允许可见光、红外光、紫外光或其组合至少部分通过。
7.如权利要求5所述的元件转移方法,其特征在于,所述基板具有至少一个凹洞于其内,且所述柔韧介电层还共形地覆盖所述凹洞的侧壁和底部。
8.如权利要求7所述的元件转移方法,其特征在于,所述至少一个凹洞的数量为多个,且当由用于抓取所述至少一个元件的所述转移头组件的一侧观看时,所述凹洞中的至少两个彼此分隔开。
9.如权利要求5所述的元件转移方法,其特征在于,所述基板具有至少一个凹洞于其内,且所述凹洞的侧壁和底部不受所述柔韧介电层覆盖。
10.如权利要求9所述的元件转移方法,其特征在于,所述至少一个凹洞的数量为多个,且当由用于抓取所述至少一个元件的所述转移头组件的一侧观看时,所述凹洞中的至少两个彼此分隔开。
11.如权利要求5所述的元件转移方法,其特征在于,所述转移头的所述电极为电单极。
12.如权利要求5所述的元件转移方法,其特征在于,所述转移头的一对所述电极为电双极。
13.如权利要求1所述的元件转移方法,其特征在于,所述柔韧介电层包括高分子材料。
14.如权利要求1所述的元件转移方法,其特征在于,所述颗粒包括高介电常数材料。
15.如权利要求1所述的元件转移方法,其特征在于,当所述转移头组件接触所述元件时,所述颗粒的至少一个部位在所述转移头组件的电极和所述元件之间。
16.如权利要求1所述的元件转移方法,其特征在于,还包括:
经由所述载体基板对所述柔韧黏合层照射至少一种电磁波,以减少所述柔韧黏合层对所述元件的黏合压力。
17.如权利要求1所述的元件转移方法,其特征在于,放置于所述柔韧黏合层上方的所述元件为其上具有被图案化的光阻层的切片元件。
18.如权利要求17所述的元件转移方法,其特征在于,将所述元件放置于所述柔韧黏合层上方的步骤包括:
将未切片元件放置于所述柔韧黏合层上方;
将光阻层涂布于所述未切片元件上方;
对所述光阻层进行图案化;以及
经由被图案化的所述光阻层对所述未切片元件进行蚀刻,致使所述未切片元件被切片成所述切片元件。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8349116B1 (en) * | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
CN106229326A (zh) * | 2016-07-22 | 2016-12-14 | 深圳市华星光电技术有限公司 | 在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法 |
CN106796911A (zh) * | 2014-07-20 | 2017-05-31 | 艾克斯瑟乐普林特有限公司 | 用于微转贴印刷的设备及方法 |
CN107068693A (zh) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | 电子组件及其制造方法、转置元件及微元件的转置方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3594853B2 (ja) | 1999-11-08 | 2004-12-02 | 日東電工株式会社 | 加熱剥離型粘着シート |
DE10128923A1 (de) | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens |
DE112004002162T5 (de) | 2003-12-02 | 2007-02-01 | Sekisui Chemical Co., Ltd. | Verfahren zur Herstellung eines Halbleiterchips |
US20070000595A1 (en) | 2005-06-29 | 2007-01-04 | Intel Corporation | Adhesive substrate and method for using |
US20080122119A1 (en) | 2006-08-31 | 2008-05-29 | Avery Dennison Corporation | Method and apparatus for creating rfid devices using masking techniques |
TWI671811B (zh) | 2009-05-12 | 2019-09-11 | 美國伊利諾大學理事會 | 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成 |
US8685837B2 (en) | 2010-02-04 | 2014-04-01 | Sharp Kabushiki Kaisha | Transfer method, method for manufacturing semiconductor device, and semiconductor device |
US8333860B1 (en) | 2011-11-18 | 2012-12-18 | LuxVue Technology Corporation | Method of transferring a micro device |
US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
US9136161B2 (en) * | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
KR101614370B1 (ko) * | 2015-04-07 | 2016-04-21 | 엘지전자 주식회사 | 반도체 발광소자, 반도체 발광소자의 이송 헤드, 및 반도체 발광소자를 이송하는 방법 |
US9722134B1 (en) * | 2016-08-16 | 2017-08-01 | Mikro Mesa Technology Co., Ltd. | Method for transferring semiconductor structure |
US10395966B2 (en) * | 2016-11-15 | 2019-08-27 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
-
2017
- 2017-12-20 US US15/847,942 patent/US10236195B1/en active Active
-
2018
- 2018-08-17 CN CN201810941000.XA patent/CN109950367B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8349116B1 (en) * | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
CN106796911A (zh) * | 2014-07-20 | 2017-05-31 | 艾克斯瑟乐普林特有限公司 | 用于微转贴印刷的设备及方法 |
CN106229326A (zh) * | 2016-07-22 | 2016-12-14 | 深圳市华星光电技术有限公司 | 在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法 |
CN107068693A (zh) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | 电子组件及其制造方法、转置元件及微元件的转置方法 |
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